Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874665
Qian Zhou, Chunlei Zhan, X. Gong, T. Chan, T. Osipowicz, Sin Leng Lim, E. Tok, Y. Yeo
For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.
{"title":"Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy","authors":"Qian Zhou, Chunlei Zhan, X. Gong, T. Chan, T. Osipowicz, Sin Leng Lim, E. Tok, Y. Yeo","doi":"10.1109/ISTDM.2014.6874665","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874665","url":null,"abstract":"For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116563167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874675
T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, Y. Suda
The formation of Ge layers on the Si (001) substrates with 3.5 Ω cm resistivity by sputter epitaxy method has been investigated. Flat Ge layers on the Si substrates are obtained by adjusting the DC sputtering conditions. High DC power sputtering modifies the surface morphology and leads to the formation of flat Ge layers.
{"title":"Effects of DC sputtering conditions on formation of Ge layers on Si substrates by sputter epitaxy method","authors":"T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, Y. Suda","doi":"10.1109/ISTDM.2014.6874675","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874675","url":null,"abstract":"The formation of Ge layers on the Si (001) substrates with 3.5 Ω cm resistivity by sputter epitaxy method has been investigated. Flat Ge layers on the Si substrates are obtained by adjusting the DC sputtering conditions. High DC power sputtering modifies the surface morphology and leads to the formation of flat Ge layers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"48 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114059247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874659
J. Michel, Yan Cai, Zhaohong Han, Lin Zhang, Wei Yu, L. Kimerling
Ge lasers, monolithically integrated on a Si CMOS platform, offer great potential for future on-chip photonic systems. In addition, the wide gain spectrum opens the possibility for inexpensive tunable lasers in the near- and mid-IR.
{"title":"Germanium lasers for the near and mid IR","authors":"J. Michel, Yan Cai, Zhaohong Han, Lin Zhang, Wei Yu, L. Kimerling","doi":"10.1109/ISTDM.2014.6874659","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874659","url":null,"abstract":"Ge lasers, monolithically integrated on a Si CMOS platform, offer great potential for future on-chip photonic systems. In addition, the wide gain spectrum opens the possibility for inexpensive tunable lasers in the near- and mid-IR.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134011530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874686
Yuan Dong, D. Lei, Xinran Xu, Wei Wang, Y. Yeo
Cl- and F- based dry etching of Ge1-xSnx were presented in this work. High selectivity of Ge1-xSnx over Ge can be achieved by F-based dry etching. This is caused by the formation of a thin nonvolatile SnFx layer at Ge1-xSnx surface. Addition of O2 to CF4 can enhance the selectivity of F-based dry etching, but with an increase of surface roughness of Ge1-xSnx samples.
{"title":"Chlorine- and Fluorine-based dry etching of Germanium-Tin","authors":"Yuan Dong, D. Lei, Xinran Xu, Wei Wang, Y. Yeo","doi":"10.1109/ISTDM.2014.6874686","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874686","url":null,"abstract":"Cl- and F- based dry etching of Ge<sub>1-x</sub>Sn<sub>x</sub> were presented in this work. High selectivity of Ge<sub>1-x</sub>Sn<sub>x</sub> over Ge can be achieved by F-based dry etching. This is caused by the formation of a thin nonvolatile SnF<sub>x</sub> layer at Ge<sub>1-x</sub>Sn<sub>x</sub> surface. Addition of O<sub>2</sub> to CF<sub>4</sub> can enhance the selectivity of F-based dry etching, but with an increase of surface roughness of Ge<sub>1-x</sub>Sn<sub>x</sub> samples.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121704061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874656
S. Yamada, M. Miyao, K. Hamaya
Using molecular beam epitaxy (MBE) techniques, we developed a growth technique of epitaxial Ge layers on a ferromagnetic alloy, Fe3Si. As a result, we demonstrated a basic structure of a vertical-type Ge-channel spin transistor on a Si platform.
{"title":"Atomically controlled heteroepitaxy of Ge on a ferromagnetic heusler alloy for a vertical-type spin transistor","authors":"S. Yamada, M. Miyao, K. Hamaya","doi":"10.1109/ISTDM.2014.6874656","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874656","url":null,"abstract":"Using molecular beam epitaxy (MBE) techniques, we developed a growth technique of epitaxial Ge layers on a ferromagnetic alloy, Fe3Si. As a result, we demonstrated a basic structure of a vertical-type Ge-channel spin transistor on a Si platform.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120883952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874639
P. Allred, M. Myronov, S. Rhead, R. Warburton, G. Intermite, G. Buller, D. Leadley
SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.
通过RP-CVD生长SPAD结构，发现SPAD结构具有优异的结晶度，TDD低;表面光滑，适合于装置的安装;为了最大限度地提高成绩，需要有清晰的兴奋剂档案。器件测量产生了任何Ge on Si SPAD记录的最高SPDE。
{"title":"Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications","authors":"P. Allred, M. Myronov, S. Rhead, R. Warburton, G. Intermite, G. Buller, D. Leadley","doi":"10.1109/ISTDM.2014.6874639","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874639","url":null,"abstract":"SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124398810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874697
A. Toriumi, C. Lee, Cimang Lu, T. Nishimura
Poor electron mobility in n-channel Ge FETs is not intrinsic. We can engineer the Ge interface through understanding of thermodynamics in gate stack formation and of kinetics of both surface planarization and oxidation. Thus, Ge FETs are quite promising not only in p-channel but also in n-channel FETs.
{"title":"High electron mobility n-channel Ge MOSFETs with sub-nm EOT","authors":"A. Toriumi, C. Lee, Cimang Lu, T. Nishimura","doi":"10.1109/ISTDM.2014.6874697","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874697","url":null,"abstract":"Poor electron mobility in n-channel Ge FETs is not intrinsic. We can engineer the Ge interface through understanding of thermodynamics in gate stack formation and of kinetics of both surface planarization and oxidation. Thus, Ge FETs are quite promising not only in p-channel but also in n-channel FETs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128357613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874704
K. Ikeda, Y. Kamimuta, Y. Moriyama, M. Ono, M. Oda, T. Irisawa, T. Tezuka
Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μeff = 1922 cm[su2}/Vs) and record-low off-current (2.7×10-9A/μm at Vd = -0.5 V) were achieved among scaled (sub-100nm Lg) Ge MOSFET for the device with the Lg of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.
采用二步Ge凝聚技术，得到了单轴压缩应变高达3.9%的Ge纳米线mosfet。在Lg为45nm的器件中，实现了创纪录的高空穴迁移率(μeff = 1922 cm[su2}/Vs)和创纪录的低关断电流(2.7×10-9A/μm at Vd = -0.5 V)。这些结果表明，应变锗通道有潜力作为未来规模CMOS的pet通道。
{"title":"Strained germanium nanowire MOSFETs","authors":"K. Ikeda, Y. Kamimuta, Y. Moriyama, M. Ono, M. Oda, T. Irisawa, T. Tezuka","doi":"10.1109/ISTDM.2014.6874704","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874704","url":null,"abstract":"Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μ<sub>eff</sub> = 1922 cm[su2}/Vs) and record-low off-current (2.7×10<sup>-</sup>9A/μm at V<sub>d</sub> = -0.5 V) were achieved among scaled (sub-100nm L<sub>g</sub>) Ge MOSFET for the device with the L<sub>g</sub> of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129241640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874632
M. Kawano, S. Yamada, M. Miyao, K. Hamaya
We have demonstrated epitaxial growth of Ge1-xSnx layers on Fe3Si by low-temperature MBE. We believe that this technique can be applicable to the growth of Ge1-xSnx on various ferromagnetic metallic templates toward high-performance spin-based MOSFETs.
{"title":"Low-temperature Grown Ge1−xSnx layers on a metallic silicide","authors":"M. Kawano, S. Yamada, M. Miyao, K. Hamaya","doi":"10.1109/ISTDM.2014.6874632","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874632","url":null,"abstract":"We have demonstrated epitaxial growth of Ge<sub>1-x</sub>Sn<sub>x</sub> layers on Fe<sub>3</sub>Si by low-temperature MBE. We believe that this technique can be applicable to the growth of Ge<sub>1-x</sub>Sn<sub>x</sub> on various ferromagnetic metallic templates toward high-performance spin-based MOSFETs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129129563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874626
S. Wicaksono, K. Tan, W. Loke, S. Yoon, Ivana, S. Subramanian, M. Owen, Y. Yeo
This paper aims to investigate the effect of substrate temperature on molecular beam epitaxy-grown InxAl1-xAs graded buffer layer. Atomic force microscopy, cross-sectional transmission electron microscopy, and secondary ion mass spectroscopy are used for wafer characterization. TEM images are used to estimate the threading dislocation density in the wafer. To demonstrate the feasibility of this growth method for device integration, HEMT and HBT are also fabricated.
{"title":"Growth temperature effects on graded InxAl1−xAs/GaAs buffer for metamorphic In0.70Ga0.30As/In0.53Al0.47As planar transistor on Ge-on-insulator(GeOI) substrate","authors":"S. Wicaksono, K. Tan, W. Loke, S. Yoon, Ivana, S. Subramanian, M. Owen, Y. Yeo","doi":"10.1109/ISTDM.2014.6874626","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874626","url":null,"abstract":"This paper aims to investigate the effect of substrate temperature on molecular beam epitaxy-grown InxAl1-xAs graded buffer layer. Atomic force microscopy, cross-sectional transmission electron microscopy, and secondary ion mass spectroscopy are used for wafer characterization. TEM images are used to estimate the threading dislocation density in the wafer. To demonstrate the feasibility of this growth method for device integration, HEMT and HBT are also fabricated.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"448 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115958055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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