Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874655
R. Koerner, M. Oehme, M. Gollhofer, K. Kostecki, M. Schmid, S. Bechler, D. Widmann, E. Kasper, J. Schulze
In this presentation we discussed the growth and the optical properties of n-doped Ge lateral LEDs. We showed, that the optical bleaching of the material and the corresponding decrease of net absorption in the Fabry-Perot cavity leads to higher electroluminescence intensity. This is a very important step to achieve net-gain inside the indirect semiconductor material Ge and to build a laser device5 with low threshold current densities.
{"title":"Optical bleaching in electrical pumped n-doped Ge on Si optical devices","authors":"R. Koerner, M. Oehme, M. Gollhofer, K. Kostecki, M. Schmid, S. Bechler, D. Widmann, E. Kasper, J. Schulze","doi":"10.1109/ISTDM.2014.6874655","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874655","url":null,"abstract":"In this presentation we discussed the growth and the optical properties of n-doped Ge lateral LEDs. We showed, that the optical bleaching of the material and the corresponding decrease of net absorption in the Fabry-Perot cavity leads to higher electroluminescence intensity. This is a very important step to achieve net-gain inside the indirect semiconductor material Ge and to build a laser device5 with low threshold current densities.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126544167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
O. Skibitzki, A. Paszuk, F. Hatami, P. Zaumseil, Y. Yamamoto, M. Schubert, A. Trampert, B. Tillack, W. Masselink, T. Hannappel, T. Schroeder
XRD techniques determined that 270 nm GaP grown on 400 nm Si0.85Ge0.15/Si(001) substrates by MOCVD is single crystalline and pseudomorphic, but carry a 0.07% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si (Fig. 2). TEM and AFM examinations indicated a closed but defective GaP layer (Fig. 3(a)) with low root mean square of roughness (rms) of 3.0 nm for 1 μm2 surface area (Fig. 3(b)). Although TEM studies confirm the absence of misfit dislocations in the pseudomorphic GaP film, growth defects (e.g. stacking faults, microtwins, and anti-phase domains) are detected, concentrating at the GaP/SiGe interface (Fig. 3(c)-(d), Fig. 4). We interpret these growth defects as a residue of the initial 3D island coalescence phase of the GaP film on the Si0.85Ge0.15 buffer. TEM-EDX studies reveal that the observed growth defects are often correlated with stoichiometric inhomogeneities in the GaP film (not shown here). Finally, ToF-SIMS detects sharp heterointerfaces between GaP and SiGe films with a minor level of Ga diffusion into the SiGe buffer (Fig. 5).
{"title":"Lattice-engineered Si1−xGex-buffer on Si(001) for GaP integration","authors":"O. Skibitzki, A. Paszuk, F. Hatami, P. Zaumseil, Y. Yamamoto, M. Schubert, A. Trampert, B. Tillack, W. Masselink, T. Hannappel, T. Schroeder","doi":"10.1063/1.4864777","DOIUrl":"https://doi.org/10.1063/1.4864777","url":null,"abstract":"XRD techniques determined that 270 nm GaP grown on 400 nm Si0.85Ge0.15/Si(001) substrates by MOCVD is single crystalline and pseudomorphic, but carry a 0.07% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si (Fig. 2). TEM and AFM examinations indicated a closed but defective GaP layer (Fig. 3(a)) with low root mean square of roughness (rms) of 3.0 nm for 1 μm2 surface area (Fig. 3(b)). Although TEM studies confirm the absence of misfit dislocations in the pseudomorphic GaP film, growth defects (e.g. stacking faults, microtwins, and anti-phase domains) are detected, concentrating at the GaP/SiGe interface (Fig. 3(c)-(d), Fig. 4). We interpret these growth defects as a residue of the initial 3D island coalescence phase of the GaP film on the Si0.85Ge0.15 buffer. TEM-EDX studies reveal that the observed growth defects are often correlated with stoichiometric inhomogeneities in the GaP film (not shown here). Finally, ToF-SIMS detects sharp heterointerfaces between GaP and SiGe films with a minor level of Ga diffusion into the SiGe buffer (Fig. 5).","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115254776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-02-06DOI: 10.1109/ISTDM.2014.6874681
K. Makihara, N. Tsunekawa, M. Ikeda, S. Miyazaki
Electronic charged states of self-aligned coupled silicon quantum dots are investigated in this study using atomic force microscopy/Kelvin probe microscopy. Spatially-controlled charging characteristics of the quantum dot are studied. Results show that the temporal change in surface potential after electron injection is due to electron transfer in the quantum dot.
{"title":"Characterization of electronic charged states of self-aligned coupled Si quantum dots by AFM/KFM probe technique","authors":"K. Makihara, N. Tsunekawa, M. Ikeda, S. Miyazaki","doi":"10.1109/ISTDM.2014.6874681","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874681","url":null,"abstract":"Electronic charged states of self-aligned coupled silicon quantum dots are investigated in this study using atomic force microscopy/Kelvin probe microscopy. Spatially-controlled charging characteristics of the quantum dot are studied. Results show that the temporal change in surface potential after electron injection is due to electron transfer in the quantum dot.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127621357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-04DOI: 10.1109/ISTDM.2014.6874699
Y. Kim, Yi-Chiau Huang, E. Sanchez, S. Chu
A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor deposition chamber. GeSn film resistivity can be as low as 0.3 mOhm-cm by in-situ boron doping of GeSn. Also, a GeSiSn film growth containing [Si]~24 at.% and [Sn]~4 at.% was achieved by flowing SiH4 during GeSn growth.
{"title":"Thermal chemical vapor deposition of epitaxial germanium tin alloys","authors":"Y. Kim, Yi-Chiau Huang, E. Sanchez, S. Chu","doi":"10.1109/ISTDM.2014.6874699","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874699","url":null,"abstract":"A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor deposition chamber. GeSn film resistivity can be as low as 0.3 mOhm-cm by in-situ boron doping of GeSn. Also, a GeSiSn film growth containing [Si]~24 at.% and [Sn]~4 at.% was achieved by flowing SiH4 during GeSn growth.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123656873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1002/047134608x.w8287
G. Reed, G. Mashanovich, F. Gardes, D. Thomson, Y. Hu, J. Soler-Penadés, M. Nedeljkovic, A. Khokar, P. Thomas, C. Littlejohns, A. Ahmad, S. Reynolds, R. Topley, C. Mitchell, S. Stankovic, P. Wilson, L. Ke, T. B. Ben Masaud, A. Tarazona, H. Chong
In this talk, silicon photonics is introduced together with its opportunities in producing highly efficient optical interconnects. An overview of recent advancements in the building block component development and the integration of these components both with each other and electronic devices to form functional photonic circuits is given.The paper then presents some of the remaining challenges for silicon photonics researchers worldwide and some approaches which can answer these needs.
{"title":"Silicon photonics","authors":"G. Reed, G. Mashanovich, F. Gardes, D. Thomson, Y. Hu, J. Soler-Penadés, M. Nedeljkovic, A. Khokar, P. Thomas, C. Littlejohns, A. Ahmad, S. Reynolds, R. Topley, C. Mitchell, S. Stankovic, P. Wilson, L. Ke, T. B. Ben Masaud, A. Tarazona, H. Chong","doi":"10.1002/047134608x.w8287","DOIUrl":"https://doi.org/10.1002/047134608x.w8287","url":null,"abstract":"In this talk, silicon photonics is introduced together with its opportunities in producing highly efficient optical interconnects. An overview of recent advancements in the building block component development and the integration of these components both with each other and electronic devices to form functional photonic circuits is given.The paper then presents some of the remaining challenges for silicon photonics researchers worldwide and some approaches which can answer these needs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129090111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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