Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874701
S. Okumura, T. Simoyama, H. Ono, M. Okuno, M. Miura, J. Fujikata, M. Noguchi, T. Mogami, T. Horikawa, Yu Tanaka, K. Morito
In this study, we investigated the effect of the Ge LT layer thickness in HT/LT 2-step Ge growth on the I-V characteristics. Even the ultrathin 5-nm-thick LT layer could lower the dark current caused by the defects due to the effective defect termination between Ge/Si interfaces.
{"title":"Observation of suppressed dark current of Ge on Si (100) using ultrathin Ge seed layer","authors":"S. Okumura, T. Simoyama, H. Ono, M. Okuno, M. Miura, J. Fujikata, M. Noguchi, T. Mogami, T. Horikawa, Yu Tanaka, K. Morito","doi":"10.1109/ISTDM.2014.6874701","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874701","url":null,"abstract":"In this study, we investigated the effect of the Ge LT layer thickness in HT/LT 2-step Ge growth on the I-V characteristics. Even the ultrathin 5-nm-thick LT layer could lower the dark current caused by the defects due to the effective defect termination between Ge/Si interfaces.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122068437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874648
I. Fischer, L. Augel, D. Ray, J. Schulze
We demonstrate integration of plasmonic structures with Ge PIN-diodes. We present results on transmission line structures where SPPs are excited optically by means of a grating, coupled into a metal-insulator-metal slot waveguide structure and guided towards the active region of a Ge PIN-diode for electrical detection.
{"title":"Plasmonic waveguiding and detection structures integrated with Ge PIN-diodes","authors":"I. Fischer, L. Augel, D. Ray, J. Schulze","doi":"10.1109/ISTDM.2014.6874648","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874648","url":null,"abstract":"We demonstrate integration of plasmonic structures with Ge PIN-diodes. We present results on transmission line structures where SPPs are excited optically by means of a grating, coupled into a metal-insulator-metal slot waveguide structure and guided towards the active region of a Ge PIN-diode for electrical detection.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123581271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874627
G. Capellini, C. Reich, S. Guha, Y. Yamamoto, S. Lischke, J. Kreissl, L. Zimmermann, M. Virgilio, A. Ghrib, M. El Kurdi, P. Boucaud, B. Tillack, T. Schroeder
The realization of a Si-integrated light source represents today the "Holy Grail" of silicon photonics. An approach based on slightly tensile strained Ge/Si heterostructures has led to the demonstration of both optically and electrically pumped laser. This achievement has been welcomed by the scientific community as a leap toward a monolithically integrated silicon-based photonic platform. In this talk, a CMOS-based fabrication approach to obtain Ge microstripes on SOI substrates featuring uniaxial strain values up to -~1.5 % , resulting in an equivalent biaxial tensile strain value up to ε~9x10-3 is presented.
{"title":"CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser","authors":"G. Capellini, C. Reich, S. Guha, Y. Yamamoto, S. Lischke, J. Kreissl, L. Zimmermann, M. Virgilio, A. Ghrib, M. El Kurdi, P. Boucaud, B. Tillack, T. Schroeder","doi":"10.1109/ISTDM.2014.6874627","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874627","url":null,"abstract":"The realization of a Si-integrated light source represents today the \"Holy Grail\" of silicon photonics. An approach based on slightly tensile strained Ge/Si heterostructures has led to the demonstration of both optically and electrically pumped laser. This achievement has been welcomed by the scientific community as a leap toward a monolithically integrated silicon-based photonic platform. In this talk, a CMOS-based fabrication approach to obtain Ge microstripes on SOI substrates featuring uniaxial strain values up to -~1.5 % , resulting in an equivalent biaxial tensile strain value up to ε~9x10-3 is presented.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125529818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874706
R. Geiger, M. Suess, C. Bonzon, R. Spolenak, J. Faist, H. Sigg
Recent demonstrations of light emission from group IV materials such as Ge and its alloy with Sn renew the vision for the realization of an all group IV based opto-electronic platform. We compare some of these approaches to our strain method and mention rewarding research to further improve materials and concepts.
{"title":"Strained Ge microbridges to obtain a direct bandgap laser","authors":"R. Geiger, M. Suess, C. Bonzon, R. Spolenak, J. Faist, H. Sigg","doi":"10.1109/ISTDM.2014.6874706","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874706","url":null,"abstract":"Recent demonstrations of light emission from group IV materials such as Ge and its alloy with Sn renew the vision for the realization of an all group IV based opto-electronic platform. We compare some of these approaches to our strain method and mention rewarding research to further improve materials and concepts.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129983283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874693
C. Chia, Aneesa Iskander, Yuanbing Cheng, Jin Yunjiang, G. Dalapati, Terry Zhuo Qiuwei
We have investigated the integration of Ge and GaAs, for both GaAs epilayer grown on Ge substrate, and Ge epilayer grown on GaAs substrate. The materials characteristics were studied and several technical issues were addressed. An example of device application for these material system has been presented, which shows excellent results that have combined benefits from both Ge and GaAs.
{"title":"Ge and GaAs integration for device applications","authors":"C. Chia, Aneesa Iskander, Yuanbing Cheng, Jin Yunjiang, G. Dalapati, Terry Zhuo Qiuwei","doi":"10.1109/ISTDM.2014.6874693","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874693","url":null,"abstract":"We have investigated the integration of Ge and GaAs, for both GaAs epilayer grown on Ge substrate, and Ge epilayer grown on GaAs substrate. The materials characteristics were studied and several technical issues were addressed. An example of device application for these material system has been presented, which shows excellent results that have combined benefits from both Ge and GaAs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129744264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874687
T. Arai, Chong Liu, A. Ohta, K. Makihara, S. Miyazaki
Mn-Nanodots with an areal dot density as high as ~2.4×1011 cm-2 and an average diameter of ~14 nm were fabricated on EB evaporated SiOx by remote H2 plasma treatment. The embedding of Mn-nanodots in SiOx was effective to reduce the dispersions of operation voltages and ON/OFF ratio in resistance.
{"title":"Impact of embedded Mn-Nanodots on resistive switching in Si-rich oxides","authors":"T. Arai, Chong Liu, A. Ohta, K. Makihara, S. Miyazaki","doi":"10.1109/ISTDM.2014.6874687","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874687","url":null,"abstract":"Mn-Nanodots with an areal dot density as high as ~2.4×10<sup>11</sup> cm<sup>-2</sup> and an average diameter of ~14 nm were fabricated on EB evaporated SiO<sub>x</sub> by remote H<sub>2</sub> plasma treatment. The embedding of Mn-nanodots in SiO<sub>x</sub> was effective to reduce the dispersions of operation voltages and ON/OFF ratio in resistance.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124001019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874643
Kaiheng Ye, Wogong Zhang, M. Oehme, M. Schmid, M. Gollhofer, K. Kostecki, D. Widmann, E. Kasper, J. Schulze
Germanium tin (GeSn) shifts the photo-response of infrared (IR) light detectors from a typical cutoff wavelength of Ge detectors of 1550nm toward the mid infrared (MIR) [1]. The determination of the optical absorption coefficient of GeSn is difficult because it requires both high grade GeSn material and appropriate measurement structure. A series of vertical pin photodetector with the absorber material GeSn of excellent quality were fabricated achieving quantitative extraction of the absorption coefficient from photo-response. In this paper the fabrication of vertical GeSn photodetectors, the measurement of the background doping level in the intrinsic region (i-region) and the determination of the absorption coefficient are presented and the influence of high doped contact layers and electro-absorption effects from the built-in electric field are discussed.
{"title":"Extraction of GeSn absorption coefficients from photodetector response","authors":"Kaiheng Ye, Wogong Zhang, M. Oehme, M. Schmid, M. Gollhofer, K. Kostecki, D. Widmann, E. Kasper, J. Schulze","doi":"10.1109/ISTDM.2014.6874643","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874643","url":null,"abstract":"Germanium tin (GeSn) shifts the photo-response of infrared (IR) light detectors from a typical cutoff wavelength of Ge detectors of 1550nm toward the mid infrared (MIR) [1]. The determination of the optical absorption coefficient of GeSn is difficult because it requires both high grade GeSn material and appropriate measurement structure. A series of vertical pin photodetector with the absorber material GeSn of excellent quality were fabricated achieving quantitative extraction of the absorption coefficient from photo-response. In this paper the fabrication of vertical GeSn photodetectors, the measurement of the background doping level in the intrinsic region (i-region) and the determination of the absorption coefficient are presented and the influence of high doped contact layers and electro-absorption effects from the built-in electric field are discussed.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"66 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114016929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874625
K. Yamamoto, Dong Wang, H. Nakashima
ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.
{"title":"Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces","authors":"K. Yamamoto, Dong Wang, H. Nakashima","doi":"10.1109/ISTDM.2014.6874625","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874625","url":null,"abstract":"ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116832746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874682
Yunsheng Deng, O. Nakatsuka, N. Taoka, S. Zaima
We can control the crystalline structure of NiGe layer on Ge(110) by controlling the deposition method, surface cleaning, and annealing temperature. We also investigated the impact of the interface crystalline structures on the electrical properties of NiGe/Ge(110) contacts. We found that thermal cleaning of Ge surface improves on the interfacial structure of the epitaxial NiGe/Ge(110) contact, that leads to lowering SBH.
{"title":"Impact of crystalline structure on electrical property of NiGe/Ge contact","authors":"Yunsheng Deng, O. Nakatsuka, N. Taoka, S. Zaima","doi":"10.1109/ISTDM.2014.6874682","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874682","url":null,"abstract":"We can control the crystalline structure of NiGe layer on Ge(110) by controlling the deposition method, surface cleaning, and annealing temperature. We also investigated the impact of the interface crystalline structures on the electrical properties of NiGe/Ge(110) contacts. We found that thermal cleaning of Ge surface improves on the interfacial structure of the epitaxial NiGe/Ge(110) contact, that leads to lowering SBH.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122669543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874690
J. Fédéli, L. Virot, L. Vivien, J. Hartmann, Y. Bogumilowicz, D. Marris-Morini, E. Cassan, C. Baudot, F. Boeuf
Silicon photonics integrated circuits development considerably spread in the last past years, and telecommunications and datacom applications are now clearly seen as its targets. With the increasing need of data rates, Si photonics components will have to offer very high speed as well as very low power consumption at lowest costs. The recent developments in photodetection have led to high speed and high responsivity waveguide integrated Ge photodetectors [1-3], with various configurations: butt coupling vs. evanescent coupling, vertical vs. lateral PIN junction. Nevertheless, Germanium absorption beyond 1550nm is limited, and long devices are needed, thus prohibiting Ge based photodiode use in the L-band (1565-1625) used in tele-communication. In this paper, we report on our latest development on very low dark current and high speed lateral PIN germanium photodetectors integrated with Si waveguides fabricated on 200mm and 300mm wafer size, for telecom and datacom applications .
{"title":"High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications","authors":"J. Fédéli, L. Virot, L. Vivien, J. Hartmann, Y. Bogumilowicz, D. Marris-Morini, E. Cassan, C. Baudot, F. Boeuf","doi":"10.1109/ISTDM.2014.6874690","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874690","url":null,"abstract":"Silicon photonics integrated circuits development considerably spread in the last past years, and telecommunications and datacom applications are now clearly seen as its targets. With the increasing need of data rates, Si photonics components will have to offer very high speed as well as very low power consumption at lowest costs. The recent developments in photodetection have led to high speed and high responsivity waveguide integrated Ge photodetectors [1-3], with various configurations: butt coupling vs. evanescent coupling, vertical vs. lateral PIN junction. Nevertheless, Germanium absorption beyond 1550nm is limited, and long devices are needed, thus prohibiting Ge based photodiode use in the L-band (1565-1625) used in tele-communication. In this paper, we report on our latest development on very low dark current and high speed lateral PIN germanium photodetectors integrated with Si waveguides fabricated on 200mm and 300mm wafer size, for telecom and datacom applications .","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115771380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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