Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874660
K. Lee, Shuyu Bao, G. Y. Chong, Yew Heng Tan, E. Fitzgerald, C. S. Tan
The GOI substrate is fabricated through buffer-less epitaxy (the growth of Ge on Si), bonding and layer transfer. The misfit dislocations which are previously “buried” along the Ge/Si interface are now accessible from the top surface. Through TDD reduction method, the TDD is reduced by at least two orders of magnitude. Hence, a Ge epilayer with lower TDD can be realized and useful for subsequent III-V integration and device fabrication.
{"title":"Fabrication of germanium-on-insulator (GOI) with improved threading dislocation density (TDD) via buffer-less epitaxy and bonding","authors":"K. Lee, Shuyu Bao, G. Y. Chong, Yew Heng Tan, E. Fitzgerald, C. S. Tan","doi":"10.1109/ISTDM.2014.6874660","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874660","url":null,"abstract":"The GOI substrate is fabricated through buffer-less epitaxy (the growth of Ge on Si), bonding and layer transfer. The misfit dislocations which are previously “buried” along the Ge/Si interface are now accessible from the top surface. Through TDD reduction method, the TDD is reduced by at least two orders of magnitude. Hence, a Ge epilayer with lower TDD can be realized and useful for subsequent III-V integration and device fabrication.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127011064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874649
Wogong Zhang, Kaiheng Ye, S. Bechler, K. Ulbricht, M. Oehme, E. Kasper, J. Schulze
This study presents calibration of a self-built 40 GHz measurement setup using vector network analyzer and Mach-Zehnder modulator. The setup is used for frequency response characterization of Ge PIN photodetectors.
{"title":"A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors","authors":"Wogong Zhang, Kaiheng Ye, S. Bechler, K. Ulbricht, M. Oehme, E. Kasper, J. Schulze","doi":"10.1109/ISTDM.2014.6874649","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874649","url":null,"abstract":"This study presents calibration of a self-built 40 GHz measurement setup using vector network analyzer and Mach-Zehnder modulator. The setup is used for frequency response characterization of Ge PIN photodetectors.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127379466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874647
I. Fischer, Li-Te Chang, C. Surgers, S. Chiussi, Kang L. Wang, J. Schulze
We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.
{"title":"Spin accumulation in n-Ge on Si with sputtered Mn5Ge3C0.8-contacts","authors":"I. Fischer, Li-Te Chang, C. Surgers, S. Chiussi, Kang L. Wang, J. Schulze","doi":"10.1109/ISTDM.2014.6874647","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874647","url":null,"abstract":"We demonstrate electrical injection of spin-polarized electrons from sputtered Mn<sub>5</sub>Ge<sub>3</sub>C<sub>0.8</sub> contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126853273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874678
R. Harper, A. Morgan, A. Liu, A. Snyder, D. Hartzell, J. Fastenau, D. Lubychev
We describe the use of LPCVD grown Ge layers on off-axis silicon wafers (200mm) as suitable templates for growth of subsequent III/V layers using solid source molecular beam epitaxy (MBE). A reproducible process for direct III-V semiconductor growth on Ge-coated Si substrates [1,2] has been developed using both single-wafer R&D MBE systems (Veeco GEN-III model) and multi-wafer production tools (Oxford V-100). Epitaxial growths have included GaAs- and InP-based structures. The structural properties of the III-V epilayers have been evaluated using optical microscopy, AFM, and (004) high-resolution x-ray diffraction (HRXRD).
{"title":"III/V on large diameter silicon substrates using LPCVD germanium templates","authors":"R. Harper, A. Morgan, A. Liu, A. Snyder, D. Hartzell, J. Fastenau, D. Lubychev","doi":"10.1109/ISTDM.2014.6874678","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874678","url":null,"abstract":"We describe the use of LPCVD grown Ge layers on off-axis silicon wafers (200mm) as suitable templates for growth of subsequent III/V layers using solid source molecular beam epitaxy (MBE). A reproducible process for direct III-V semiconductor growth on Ge-coated Si substrates [1,2] has been developed using both single-wafer R&D MBE systems (Veeco GEN-III model) and multi-wafer production tools (Oxford V-100). Epitaxial growths have included GaAs- and InP-based structures. The structural properties of the III-V epilayers have been evaluated using optical microscopy, AFM, and (004) high-resolution x-ray diffraction (HRXRD).","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128356645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874646
G. Eneman, D. Brunco, L. Witters, J. Mitard, A. Hikavyy, A. De Keersgieter, P. Roussel, R. Loo, A. Veloso, N. Horiguchi, N. Collaert, A. Thean
S/D epitaxial layers and SRBs are the most effective stressors in scaled FinFETs. While S/D stressors are well established, for SRBs the remaining technical difficulties are significant. However, its expected performance boost and enhanced scalability makes developing SRBs worthwhile, especially when combined with alternative channel materials.
{"title":"Impact of stressors in future SiGe-based FinFETs: Mobility boost and scalability","authors":"G. Eneman, D. Brunco, L. Witters, J. Mitard, A. Hikavyy, A. De Keersgieter, P. Roussel, R. Loo, A. Veloso, N. Horiguchi, N. Collaert, A. Thean","doi":"10.1109/ISTDM.2014.6874646","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874646","url":null,"abstract":"S/D epitaxial layers and SRBs are the most effective stressors in scaled FinFETs. While S/D stressors are well established, for SRBs the remaining technical difficulties are significant. However, its expected performance boost and enhanced scalability makes developing SRBs worthwhile, especially when combined with alternative channel materials.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131205522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874623
Giordano Scappucci
We have demonstrated that phosphorus delta-doping of germanium in ultra-high vacuum is a promising technique to tune doping at high densities (>1020 cm-3) in thin Ge films. Eventually, high doping densities on demand for photonic or electronic applications may be delivered by suitably choosing the total number of layers, tuning their separation in the δ-layer stack, and engineering the amount of P incorporated in each layer.
{"title":"Phosphorus delta-doping in germanium","authors":"Giordano Scappucci","doi":"10.1109/ISTDM.2014.6874623","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874623","url":null,"abstract":"We have demonstrated that phosphorus delta-doping of germanium in ultra-high vacuum is a promising technique to tune doping at high densities (>1020 cm-3) in thin Ge films. Eventually, high doping densities on demand for photonic or electronic applications may be delivered by suitably choosing the total number of layers, tuning their separation in the δ-layer stack, and engineering the amount of P incorporated in each layer.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125240450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874683
H. Higashi, Y. Fujita, M. Kawano, J. Hirayama, S. Yamada, Jong-Hyeok Park, T. Sadoh, M. Miyao, K. Hamaya
By an insertion of a Ge(Sn) layer and its CMP treatments, we have improved the crystalline and magnetic characteristics of one of the Heusler-compounds, Fe3Si, on (111)-oriented Ge on a flexible substrate. This work is a first step of high-performance flexible spintronics for flexible system-in-display devices.
{"title":"Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate","authors":"H. Higashi, Y. Fujita, M. Kawano, J. Hirayama, S. Yamada, Jong-Hyeok Park, T. Sadoh, M. Miyao, K. Hamaya","doi":"10.1109/ISTDM.2014.6874683","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874683","url":null,"abstract":"By an insertion of a Ge(Sn) layer and its CMP treatments, we have improved the crystalline and magnetic characteristics of one of the Heusler-compounds, Fe3Si, on (111)-oriented Ge on a flexible substrate. This work is a first step of high-performance flexible spintronics for flexible system-in-display devices.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115391263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874628
M. Myronov, C. Morrison, J. Halpin, S. Rhead, J. Foronda, D. Leadley
We report an extremely high 2DHG mobility of 4500 cm2V-1s-1 and 777000 cm2V-1s-1 at 293 and 0.333 K, respectively, in a compressively strained Ge QW grown by industrial type RP-CVD on a standard Si(001) substrate. The obtained 2DHG mobility is substantially higher than those reported so far and in structures grown by research type epitaxial growth techniques, i.e. SS-MBE and LEPE-CVD. Also, the room and low temperature hole mobilities obtained are the highest not only among the group-IV Si and Ge based semiconductors, but also among p-type III-V and II-VI ones. These results demonstrate the very high quality of the strained Ge QW epilayers grown by RP-CVD and the huge potential for further applications of such materials in modern and future CMOS, p-MOSFET and p-MODFET electronic devices. The 2DHG mobility is already sufficiently high to fabricate sub-100 nm electronic devices and demonstrate ballistic transport therein at or around room temperature.
{"title":"Revealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate","authors":"M. Myronov, C. Morrison, J. Halpin, S. Rhead, J. Foronda, D. Leadley","doi":"10.1109/ISTDM.2014.6874628","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874628","url":null,"abstract":"We report an extremely high 2DHG mobility of 4500 cm2V-1s-1 and 777000 cm2V-1s-1 at 293 and 0.333 K, respectively, in a compressively strained Ge QW grown by industrial type RP-CVD on a standard Si(001) substrate. The obtained 2DHG mobility is substantially higher than those reported so far and in structures grown by research type epitaxial growth techniques, i.e. SS-MBE and LEPE-CVD. Also, the room and low temperature hole mobilities obtained are the highest not only among the group-IV Si and Ge based semiconductors, but also among p-type III-V and II-VI ones. These results demonstrate the very high quality of the strained Ge QW epilayers grown by RP-CVD and the huge potential for further applications of such materials in modern and future CMOS, p-MOSFET and p-MODFET electronic devices. The 2DHG mobility is already sufficiently high to fabricate sub-100 nm electronic devices and demonstrate ballistic transport therein at or around room temperature.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129343106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874658
W. Loke, Qian Zhou, X. Gong, M. Owen, S. Wicaksono, K. Tan, Y. Yeo, S. Yoon
MEE growth of InGaP on a (001) oriented Ge surface with 10° offcut on GeOI substrate was presented. TEM inspection shows good crystalline quality of InGaP material on Ge surface. Further study is required to further optimize the MEE-InGaP process for defect-free InGaP/Ge interface and subsequent epilayers.
{"title":"Migration enhanced epitaxy of InGaP on offcut Ge (001) using solid-source molecular beam epitaxy","authors":"W. Loke, Qian Zhou, X. Gong, M. Owen, S. Wicaksono, K. Tan, Y. Yeo, S. Yoon","doi":"10.1109/ISTDM.2014.6874658","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874658","url":null,"abstract":"MEE growth of InGaP on a (001) oriented Ge surface with 10° offcut on GeOI substrate was presented. TEM inspection shows good crystalline quality of InGaP material on Ge surface. Further study is required to further optimize the MEE-InGaP process for defect-free InGaP/Ge interface and subsequent epilayers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129978977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874629
K.-T. Chen, S. T. Chang
The hole mobility performance in strained SiGe PMOS devices is studied. Calculations have then been used for considering the impact of device structures including BULK, SOI, and DG, SiGe materials, alloy scattering and biaxial compressive strain owing to (001), (110), and (111) Si substrate orientation on the hole mobility performance to give an indication of the potential performance of this potential PMOS device.
{"title":"A study of hole mobility in the inversion layer of relaxed and strained SiGe PMOS devices","authors":"K.-T. Chen, S. T. Chang","doi":"10.1109/ISTDM.2014.6874629","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874629","url":null,"abstract":"The hole mobility performance in strained SiGe PMOS devices is studied. Calculations have then been used for considering the impact of device structures including BULK, SOI, and DG, SiGe materials, alloy scattering and biaxial compressive strain owing to (001), (110), and (111) Si substrate orientation on the hole mobility performance to give an indication of the potential performance of this potential PMOS device.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123484623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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