Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874695
V. Sverdlov, D. Osintsev, S. Selberherr
The outstanding increase in performance of integrated circuits is facilitated and supported by the continuous miniaturization of CMOS components; however, growing technological challenges [1] and soaring costs are gradually expected to bring scaling to an end. This puts foreseeable limitations to the future performance increase, and research on alternative technologies and computational principles becomes paramount. The MOSFET, the main building block of modern integrated circuits, fundamentally operates by employing the charge degree of freedom of an electron. The electron charge interacts with the electrostatic field induced by the gate. The transistor channel can be closed or opened by creating or removing a gate induced potential barrier. Another intrinsic electron property, the electron spin, attracts much attention as a possible candidate for complimenting or even replacing the charge in future electron devices. The electron spin state is characterized by the two possible spin projections on a given axis and thus has potential in digital information processing. In addition, the small amount of energy needed to invert the spin orientation is attractive for low power applications.
{"title":"Spin lifetime in strained silicon films","authors":"V. Sverdlov, D. Osintsev, S. Selberherr","doi":"10.1109/ISTDM.2014.6874695","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874695","url":null,"abstract":"The outstanding increase in performance of integrated circuits is facilitated and supported by the continuous miniaturization of CMOS components; however, growing technological challenges [1] and soaring costs are gradually expected to bring scaling to an end. This puts foreseeable limitations to the future performance increase, and research on alternative technologies and computational principles becomes paramount. The MOSFET, the main building block of modern integrated circuits, fundamentally operates by employing the charge degree of freedom of an electron. The electron charge interacts with the electrostatic field induced by the gate. The transistor channel can be closed or opened by creating or removing a gate induced potential barrier. Another intrinsic electron property, the electron spin, attracts much attention as a possible candidate for complimenting or even replacing the charge in future electron devices. The electron spin state is characterized by the two possible spin projections on a given axis and thus has potential in digital information processing. In addition, the small amount of energy needed to invert the spin orientation is attractive for low power applications.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124134333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874644
J. Foronda, C. Morrison, M. Myronov, J. Halpin, S. Rhead, D. Leadley
We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s).This is a promising result for Ge as a possible channel for future spin-FETs.
{"title":"Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure","authors":"J. Foronda, C. Morrison, M. Myronov, J. Halpin, S. Rhead, D. Leadley","doi":"10.1109/ISTDM.2014.6874644","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874644","url":null,"abstract":"We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s).This is a promising result for Ge as a possible channel for future spin-FETs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"316 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122311125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874666
K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, S. Zaima
We achieved the world's first epitaxial growth of a Ge1-x-ySnxCy layer, and investigated the effect of Sn incorporation on the growth of Ge1-xCx. Sn incorporation can decrease the epitaxial temperature of Ge1-xCx layer. Also, Sn incorporation can make C atoms stable at the substitutional site. This Ge1-x-ySnxCy layer is expected to realize the energy band engineering independently on the lattice parameter and promises to extend the potential of group-IV semiconductor materials for nanoelectronics and optoelectronic applications.
{"title":"Growth and crystalline properties of Ge1−x−ySnxCy ternary alloy thin films on Ge(001) substrate","authors":"K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, S. Zaima","doi":"10.1109/ISTDM.2014.6874666","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874666","url":null,"abstract":"We achieved the world's first epitaxial growth of a Ge<sub>1-x-y</sub>Sn<sub>x</sub>C<sub>y</sub> layer, and investigated the effect of Sn incorporation on the growth of Ge<sub>1-x</sub>C<sub>x</sub>. Sn incorporation can decrease the epitaxial temperature of Ge<sub>1-x</sub>C<sub>x</sub> layer. Also, Sn incorporation can make C atoms stable at the substitutional site. This Ge<sub>1-x-y</sub>Sn<sub>x</sub>C<sub>y</sub> layer is expected to realize the energy band engineering independently on the lattice parameter and promises to extend the potential of group-IV semiconductor materials for nanoelectronics and optoelectronic applications.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128250168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874636
C. Morrison, M. Myronov, J. Foronda, C. Casteleiro, J. Halpin, S. Rhead, D. Leadley
A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.
通过B调制掺杂，在应变Ge量子阱结构中产生了高迁移率(780,000 cm2/Vs)的2DHG。在0.3 K ~ 300 K的温度范围内，通过霍尔效应测量了载流子密度和迁移率，得到了低温载流子密度2×1011cm-2。低温磁阻测量表明，该调制掺杂量子阱的SdH振荡具有复杂的多频振荡行为。这可能归因于异质结构中其他层的载流子的振荡，这些载流子叠加在量子阱中由平行传导引起的输运振荡上。
{"title":"Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well","authors":"C. Morrison, M. Myronov, J. Foronda, C. Casteleiro, J. Halpin, S. Rhead, D. Leadley","doi":"10.1109/ISTDM.2014.6874636","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874636","url":null,"abstract":"A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133369522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Rhead, V. Shah, J. Halpin, M. Myronov, D. Patchett, P. Allred, V. Kachkanov, I. Dolbnya, N. Wilson, D. Leadley
The membranes have the potential to be excellent growth and integration platforms: compared to bulk Ge epitaxially grown on Si (001) they are perfectly flat and XRD and PV-TEM confirm the misfit dislocation network has been removed. The strain profile across the membrane is symmetrical and the membrane is slightly more tensile strained than the bulk material. The difference in strain across the membrane is too small to create a large variation in optical device performance across the entire membrane. Coupled with the smoother surface and absence of misfit dislocation network compared to the bulk material, the membranes are both excellent strain tuning platforms for optical applications and, more generally, for growth of subsequent active layers.
{"title":"Tensile strain mapping in flat germanium membranes","authors":"S. Rhead, V. Shah, J. Halpin, M. Myronov, D. Patchett, P. Allred, V. Kachkanov, I. Dolbnya, N. Wilson, D. Leadley","doi":"10.1063/1.4874836","DOIUrl":"https://doi.org/10.1063/1.4874836","url":null,"abstract":"The membranes have the potential to be excellent growth and integration platforms: compared to bulk Ge epitaxially grown on Si (001) they are perfectly flat and XRD and PV-TEM confirm the misfit dislocation network has been removed. The strain profile across the membrane is symmetrical and the membrane is slightly more tensile strained than the bulk material. The difference in strain across the membrane is too small to create a large variation in optical device performance across the entire membrane. Coupled with the smoother surface and absence of misfit dislocation network compared to the bulk material, the membranes are both excellent strain tuning platforms for optical applications and, more generally, for growth of subsequent active layers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129300962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874645
S. Wirths, M. Pampillón, E. San Andrés, D. Stange, A. Tiedemann, G. Mussler, A. Fox, U. Breuer, J. Hartmann, S. Mantl, D. Buca
Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.
{"title":"Growth and interface engineering of highly strained low bandgap group IV semiconductors","authors":"S. Wirths, M. Pampillón, E. San Andrés, D. Stange, A. Tiedemann, G. Mussler, A. Fox, U. Breuer, J. Hartmann, S. Mantl, D. Buca","doi":"10.1109/ISTDM.2014.6874645","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874645","url":null,"abstract":"Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129287029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874698
T. Nishimura, C. Lee, T. Yajima, K. Nagashio, A. Toriumi
The Ge surfaces are planarized in H2 annealing with atomically flat manner on (110) and (100) surfaces in addition to that on (111) surface. The terrace widths on (111) and (110) are almost controlled by the off-angle of the initial surface. The low thermal budget of 500°C in H2 to form the atomically flat surface is advantageous for the device fabrication on Ge (111) and (110) surfaces, because these surface orientations fortunately are expected to facilitate the high electron and hole mobility for n- and p-FETs, respectively.
{"title":"Atomic-scale planarization of Ge (111), (110) and (100) surfaces","authors":"T. Nishimura, C. Lee, T. Yajima, K. Nagashio, A. Toriumi","doi":"10.1109/ISTDM.2014.6874698","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874698","url":null,"abstract":"The Ge surfaces are planarized in H2 annealing with atomically flat manner on (110) and (100) surfaces in addition to that on (111) surface. The terrace widths on (111) and (110) are almost controlled by the off-angle of the initial surface. The low thermal budget of 500°C in H2 to form the atomically flat surface is advantageous for the device fabrication on Ge (111) and (110) surfaces, because these surface orientations fortunately are expected to facilitate the high electron and hole mobility for n- and p-FETs, respectively.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"242 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124668129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874677
D. H. Petersen, H. H. Henrichsen, R. Lin, P. Nielsen, O. Hansen
With increasing complexity of processes and variety of materials used for semiconductor devices, stringent control of the electronic properties is becoming ever more relevant. Collinear micro four-point probe (M4PP) based measurement systems have become high-end metrology methods for characterization and monitoring of sheet resistance as well as sheet carrier density and mobility via the Micro Hall Effect (MHE) method.
{"title":"Automated Micro Hall Effect measurements","authors":"D. H. Petersen, H. H. Henrichsen, R. Lin, P. Nielsen, O. Hansen","doi":"10.1109/ISTDM.2014.6874677","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874677","url":null,"abstract":"With increasing complexity of processes and variety of materials used for semiconductor devices, stringent control of the electronic properties is becoming ever more relevant. Collinear micro four-point probe (M4PP) based measurement systems have become high-end metrology methods for characterization and monitoring of sheet resistance as well as sheet carrier density and mobility via the Micro Hall Effect (MHE) method.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"332 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124683703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874703
E. Uccelli, N. Daix, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. Hartmann, J. Fompeyrine
As Si-CMOS scaling has become increasingly challenging, III-V compound semiconductors such as InxGa1-xAs (x≥0.53) (InGaAs) are receiving much interest as channel material for nFET [1,2]. Together with SiGe as a pFET channel, they are considered as potential candidates to replace silicon for low power, high performance CMOS thanks to their better transport properties. A prerequisite in view of integration at VLSI scale is the formation of high quality III-V heterostructures on a silicon substrate to enable production on large size wafers.
{"title":"III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS","authors":"E. Uccelli, N. Daix, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. Hartmann, J. Fompeyrine","doi":"10.1109/ISTDM.2014.6874703","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874703","url":null,"abstract":"As Si-CMOS scaling has become increasingly challenging, III-V compound semiconductors such as InxGa1-xAs (x≥0.53) (InGaAs) are receiving much interest as channel material for nFET [1,2]. Together with SiGe as a pFET channel, they are considered as potential candidates to replace silicon for low power, high performance CMOS thanks to their better transport properties. A prerequisite in view of integration at VLSI scale is the formation of high quality III-V heterostructures on a silicon substrate to enable production on large size wafers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124698940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874662
Byongju Kim, H. Jang, D. Byeon, Sangmo Koo, D. Ko
In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.
{"title":"Observation of in situ B-doped Epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition","authors":"Byongju Kim, H. Jang, D. Byeon, Sangmo Koo, D. Ko","doi":"10.1109/ISTDM.2014.6874662","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874662","url":null,"abstract":"In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124052487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：