Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874688
T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
We investigated the crystalline structure of Ge1-x-ySixSny layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge1-x-ySixSny layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge1-x-ySixSny layer even with small misfit strain.
{"title":"Epitaxial growth and crystalline properties of Ge1−x−ySixSny layers on Ge(001) substrates","authors":"T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima","doi":"10.1109/ISTDM.2014.6874688","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874688","url":null,"abstract":"We investigated the crystalline structure of Ge<sub>1-x-y</sub>Si<sub>x</sub>Sn<sub>y</sub> layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge<sub>1-x-y</sub>Si<sub>x</sub>Sn<sub>y</sub> layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge<sub>1-x-y</sub>Si<sub>x</sub>Sn<sub>y</sub> layer even with small misfit strain.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128175431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874668
Wei Wang, Qian Zhou, Jisheng Pan, Zheng Zhang, E. Tok, Y. Yeo
Highly strained Ge1-xSnx films were epitaxially grown on Ge(001), with x up to 0.17. Good crystalline quality and a relatively flat surface were obtained. Critical temperatures exist for Sn segregation for various x. XPS shows that the Sn surface segregation could occur at temperatures as low as 400 °C for Ge0.932Sn0.068.
{"title":"Thermal stability of highly compressive strained germanium-tin (GeSn) grown by molecular beam epitaxy","authors":"Wei Wang, Qian Zhou, Jisheng Pan, Zheng Zhang, E. Tok, Y. Yeo","doi":"10.1109/ISTDM.2014.6874668","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874668","url":null,"abstract":"Highly strained Ge<sub>1-x</sub>Sn<sub>x</sub> films were epitaxially grown on Ge(001), with x up to 0.17. Good crystalline quality and a relatively flat surface were obtained. Critical temperatures exist for Sn segregation for various x. XPS shows that the Sn surface segregation could occur at temperatures as low as 400 °C for Ge<sub>0.932</sub>Sn<sub>0.068</sub>.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130785774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874680
M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, S. Zaima
Comparative study between the poly-Si and the poly-SiSn layers reveals that the Sn incorporation is effective to decrease the crystallization temperature. Also, we found that the formation of SiSn polycrystal with a substitutional Sn content of around 30%, which is expected as a direct transition semiconductor, becomes possible on SiO2 at a low temperature growth of 150°C.
{"title":"Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers","authors":"M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, S. Zaima","doi":"10.1109/ISTDM.2014.6874680","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874680","url":null,"abstract":"Comparative study between the poly-Si and the poly-SiSn layers reveals that the Sn incorporation is effective to decrease the crystallization temperature. Also, we found that the formation of SiSn polycrystal with a substitutional Sn content of around 30%, which is expected as a direct transition semiconductor, becomes possible on SiO2 at a low temperature growth of 150°C.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"249 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114286476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874674
R. Loo, Jia-Lin Sun, L. Witters, A. Hikavyy, B. Vincent, Y. Shimura, P. Favia, O. Richard, H. Bender, W. Vandervorst, N. Collaert, A. Thean
A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si1-xGex surfaces.
{"title":"Strained Ge FinFET structures fabricated by selective epitaxial growth","authors":"R. Loo, Jia-Lin Sun, L. Witters, A. Hikavyy, B. Vincent, Y. Shimura, P. Favia, O. Richard, H. Bender, W. Vandervorst, N. Collaert, A. Thean","doi":"10.1109/ISTDM.2014.6874674","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874674","url":null,"abstract":"A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si1-xGex surfaces.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115251834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874694
S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, T. Asano, T. Yamaha, W. Takeuchi
The incorporation of Sn into Ge and Si1-xGex effectively improves on the crystalline and electronic properties. Also, Sn-related group-IV materials give us new features of energy band engineering. The development of crystal growth of Sn-related alloys is essential for extending applications of future Si nanoelectronics.
{"title":"Crystal growth of Sn-related group-IV alloy thin films for advanced Si nanoelectronics","authors":"S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, T. Asano, T. Yamaha, W. Takeuchi","doi":"10.1109/ISTDM.2014.6874694","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874694","url":null,"abstract":"The incorporation of Sn into Ge and Si1-xGex effectively improves on the crystalline and electronic properties. Also, Sn-related group-IV materials give us new features of energy band engineering. The development of crystal growth of Sn-related alloys is essential for extending applications of future Si nanoelectronics.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"36 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115639310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874673
Kezheng Li, Yuan Hongyu, K. H. Kong, H. Gamble, D. McNeill, M. Armstrong
In conclusion, a unique method to achieve high quality shallow n+/p junction by out-diffusion of phosphorus from poly-Ge has been demonstrated. The technology and key issues of poly-Ge deposition by LPCVD is presented. Results shown from diode I-V characteristics indicate feasibility of poly-Ge used for junction and contact realization.
{"title":"Shallow junction and contact realization by diffusion of heavily doped polycrystalline-germanium for Ge devices","authors":"Kezheng Li, Yuan Hongyu, K. H. Kong, H. Gamble, D. McNeill, M. Armstrong","doi":"10.1109/ISTDM.2014.6874673","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874673","url":null,"abstract":"In conclusion, a unique method to achieve high quality shallow n+/p junction by out-diffusion of phosphorus from poly-Ge has been demonstrated. The technology and key issues of poly-Ge deposition by LPCVD is presented. Results shown from diode I-V characteristics indicate feasibility of poly-Ge used for junction and contact realization.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130384066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874691
D. Buca, S. Wirths, D. Stange, A. Tiedemann, G. Mussler, Z. Ikonić, S. Chiussi, J. Hartmann, D. Grutzmacher, S. Mantl
This study presents the synthesis of a SiGeSn buffer layer by reduced pressure CVD method. Band structure calculation and transmission electron microscopy are used for material characterization. The use of this heterostructure for MOSFET and MOS capacitor fabrication is also addressed.
{"title":"Si-Ge-Sn heterostructures: Growth and applications","authors":"D. Buca, S. Wirths, D. Stange, A. Tiedemann, G. Mussler, Z. Ikonić, S. Chiussi, J. Hartmann, D. Grutzmacher, S. Mantl","doi":"10.1109/ISTDM.2014.6874691","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874691","url":null,"abstract":"This study presents the synthesis of a SiGeSn buffer layer by reduced pressure CVD method. Band structure calculation and transmission electron microscopy are used for material characterization. The use of this heterostructure for MOSFET and MOS capacitor fabrication is also addressed.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125906941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874640
B. Baert, Somya Gupta, F. Gencarelli, R. Loo, E. Simoen, N. D. Nguyen
I-V characteristics of pGeSn/nGe diodes have been measured and show very interesting properties. Simulations of the same structure are able to reproduce most of the observed behavior and point to the predominant influence of parameters such as the band gap energy of the GeSn layer. C-V characteristics showing little frequency dependence have also been measured, and their analysis for the determination of the carrier concentration is confirmed by simulations. More investigations of the effect of temperature, of other observed features in the C-V characteristics and of other defects at the interface or in the bulk of either layers, are still required in order to explain some of the observed behaviors, notably the reverse saturation current.
{"title":"Electrical characterization of pGeSn/nGe diodes","authors":"B. Baert, Somya Gupta, F. Gencarelli, R. Loo, E. Simoen, N. D. Nguyen","doi":"10.1109/ISTDM.2014.6874640","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874640","url":null,"abstract":"I-V characteristics of pGeSn/nGe diodes have been measured and show very interesting properties. Simulations of the same structure are able to reproduce most of the observed behavior and point to the predominant influence of parameters such as the band gap energy of the GeSn layer. C-V characteristics showing little frequency dependence have also been measured, and their analysis for the determination of the carrier concentration is confirmed by simulations. More investigations of the effect of temperature, of other observed features in the C-V characteristics and of other defects at the interface or in the bulk of either layers, are still required in order to explain some of the observed behaviors, notably the reverse saturation current.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124004856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874641
Yiheng Lin, H. Yasuda, H. Ho, M. Schiekofer, B. Benna, R. Wise, G. Xia
The effectiveness of thermal nitridation in retarding P diffusion in SiGe and SiGe:C is investigated in this study. Three types of masking layers are used to make P diffuse under vacancy injection, interstitial injection, and inert annealing conditions. A secondary ion mass spectroscopy is used to measure the diffusion profiles.
{"title":"Effect of thermal nitridation on phosphorus diffusion in SiGe and SiGe:C and its implication on diffusion mechanisms","authors":"Yiheng Lin, H. Yasuda, H. Ho, M. Schiekofer, B. Benna, R. Wise, G. Xia","doi":"10.1109/ISTDM.2014.6874641","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874641","url":null,"abstract":"The effectiveness of thermal nitridation in retarding P diffusion in SiGe and SiGe:C is investigated in this study. Three types of masking layers are used to make P diffuse under vacancy injection, interstitial injection, and inert annealing conditions. A secondary ion mass spectroscopy is used to measure the diffusion profiles.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116533722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874635
J. Halpin, M. Myronov, S. Rhead, D. Leadley
Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.
{"title":"N-type SiGe/Ge superlattice structures for terahertz emission","authors":"J. Halpin, M. Myronov, S. Rhead, D. Leadley","doi":"10.1109/ISTDM.2014.6874635","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874635","url":null,"abstract":"Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124508110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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