Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649073
I. Bucur, S. Serban, A. Surpăteanu, N. Cupcea, C. Viespe, C. Grigoriu, C. Toader, N. Grigoriu
In this paper we studied a device based on array of six different sensors with surface acoustic wave for detections and recognition of three chemical warfare agents (Chloropicrin, Soman and Lewisite). The sensors are “delay line” type with a center frequency of 69.4 MHz. It presents an original algorithm to identify the nature and concentration of gas from a finite range of possible gases. Numerical program developed to implement this algorithm, provides to operators all the particulars of gas and an indicator of credibility of the results provided as a measure of the degree of disturbance of the signals received from sensors.
{"title":"The development of a sensor array for the detection and recognition of chemical warfare agents","authors":"I. Bucur, S. Serban, A. Surpăteanu, N. Cupcea, C. Viespe, C. Grigoriu, C. Toader, N. Grigoriu","doi":"10.1109/SMICND.2010.5649073","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649073","url":null,"abstract":"In this paper we studied a device based on array of six different sensors with surface acoustic wave for detections and recognition of three chemical warfare agents (Chloropicrin, Soman and Lewisite). The sensors are “delay line” type with a center frequency of 69.4 MHz. It presents an original algorithm to identify the nature and concentration of gas from a finite range of possible gases. Numerical program developed to implement this algorithm, provides to operators all the particulars of gas and an indicator of credibility of the results provided as a measure of the degree of disturbance of the signals received from sensors.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"56 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120901790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650655
C. Baicea, A. Ivan, C. Trisca-Rusu, A. Nechifor, D. Vãireanu, Ș. Voicu, G. Nechifor
In order to combine the advantages of silica as an inorganic material (chemical resitance, optical properties) to that of polypyrrole as a conductive polymer one has attempted to obtain novel silica-polypyrrole composite particles by a newly improved technique consisting to in situ polymerization of adsorbed pyrrole into silica. The new synthesized material was characterized by FT-IR spectroscopy, Optical and Scanning Electron Microscopy and the ionic conductive properties were evaluated by Electrochemical Impedance Spectroscopy.
{"title":"Ionic conductive silica-polypyrrole composites obtained by in-situ polymerization","authors":"C. Baicea, A. Ivan, C. Trisca-Rusu, A. Nechifor, D. Vãireanu, Ș. Voicu, G. Nechifor","doi":"10.1109/SMICND.2010.5650655","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650655","url":null,"abstract":"In order to combine the advantages of silica as an inorganic material (chemical resitance, optical properties) to that of polypyrrole as a conductive polymer one has attempted to obtain novel silica-polypyrrole composite particles by a newly improved technique consisting to in situ polymerization of adsorbed pyrrole into silica. The new synthesized material was characterized by FT-IR spectroscopy, Optical and Scanning Electron Microscopy and the ionic conductive properties were evaluated by Electrochemical Impedance Spectroscopy.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122901387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650770
G. Sajin, S. Simion, F. Craciunoiu, A. Bunea, A. Muller, A. Dinescu
This paper presents the design and manufacturing of a metamaterial Composite Right/Left Handed (CRLH) directional coupler on silicon substrate in coplanar waveguide (CPW) configuration, with a frequency band between 26–28 GHz. The design makes use of 4 CRLH cells, cascaded and coupled two by two in order to obtain the directional coupler structure. The device was processed on a 500µm thick silicon substrate with a Au/Cr metallization with the purpose of easy integration in more complex millimeter wave integrated circuits. The measurement of working frequency, reflection loss and isolation of the coupler validates the calculated values of these parameters.
{"title":"Metamaterial millimeter wave directional coupler on silicon substrate","authors":"G. Sajin, S. Simion, F. Craciunoiu, A. Bunea, A. Muller, A. Dinescu","doi":"10.1109/SMICND.2010.5650770","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650770","url":null,"abstract":"This paper presents the design and manufacturing of a metamaterial Composite Right/Left Handed (CRLH) directional coupler on silicon substrate in coplanar waveguide (CPW) configuration, with a frequency band between 26–28 GHz. The design makes use of 4 CRLH cells, cascaded and coupled two by two in order to obtain the directional coupler structure. The device was processed on a 500µm thick silicon substrate with a Au/Cr metallization with the purpose of easy integration in more complex millimeter wave integrated circuits. The measurement of working frequency, reflection loss and isolation of the coupler validates the calculated values of these parameters.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114803603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650568
T. Sandu
We analyse the adequacy of the single-band model in Si based resonant tunneling devices (RTD's) as opposed to a multi-band model which is closer to real systems due to the fact that Si is an indirect bandgap semiconductor. Our calculations based on non-equilibrium Green function formalism show that a single band model with tunneling light electrons in Si is quantitatively sound in simulating Si based RTD's. It is found that light electrons contribute not only through 2-dimensional (2D) transverse density of states but also through the transparency of the barriers. Thus a single-band model can be safely used in applications.
{"title":"Quantitative assessment of the single-band model in the silicon based resonant tunneling devices","authors":"T. Sandu","doi":"10.1109/SMICND.2010.5650568","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650568","url":null,"abstract":"We analyse the adequacy of the single-band model in Si based resonant tunneling devices (RTD's) as opposed to a multi-band model which is closer to real systems due to the fact that Si is an indirect bandgap semiconductor. Our calculations based on non-equilibrium Green function formalism show that a single band model with tunneling light electrons in Si is quantitatively sound in simulating Si based RTD's. It is found that light electrons contribute not only through 2-dimensional (2D) transverse density of states but also through the transparency of the barriers. Thus a single-band model can be safely used in applications.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124581115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650476
J. Lambrechts, S. Sinha
A BiCMOS Silicon Germanium cross-coupled differential-pair narrowband voltage controlled oscillator with a tail-current shaping technique to improve phase noise performance is implemented and experimental results are presented. Several VCOs are fabricated on-chip to serve for a practical comparison and the results are also compared to simulated results. Simulation results provided a 3.3 dBc/Hz improvement from −105.3 dBc/Hz to −108.6 dBc/Hz at a 1 MHz offset frequency from the 5 GHz carrier. Measured results confirm the correlation of phase noise performance between simulation and prototype. Acceptable phase noise performance compared to previous works is achieved using a relatively cost-effective technology.
{"title":"Phase noise analysis of a tail-current shaping technique employed on a BiCMOS voltage controlled oscillator","authors":"J. Lambrechts, S. Sinha","doi":"10.1109/SMICND.2010.5650476","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650476","url":null,"abstract":"A BiCMOS Silicon Germanium cross-coupled differential-pair narrowband voltage controlled oscillator with a tail-current shaping technique to improve phase noise performance is implemented and experimental results are presented. Several VCOs are fabricated on-chip to serve for a practical comparison and the results are also compared to simulated results. Simulation results provided a 3.3 dBc/Hz improvement from −105.3 dBc/Hz to −108.6 dBc/Hz at a 1 MHz offset frequency from the 5 GHz carrier. Measured results confirm the correlation of phase noise performance between simulation and prototype. Acceptable phase noise performance compared to previous works is achieved using a relatively cost-effective technology.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"345 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134009479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650262
D. Grutzmacher, C. Volk, K. Sladek, K. Weis, S. Estevez Hernandez, H. Hardtdegen, N. Demarina, T. Schapers
We investigated the quantum transport in InAs nanowires. From the universal conductance fluctuations at 0.5 K a phase-coherence length of 300 nm was extracted. By averaging the gate-dependent conductance fluctuations a magnetoconductance peak due to weak antilocalization was found indicating the presence of spin-orbit coupling. In a nanowire quantum dot formed by three gate fingers single electron tunneling was confirmed
{"title":"Quantum phenomena during electron transport in InAs nanowires","authors":"D. Grutzmacher, C. Volk, K. Sladek, K. Weis, S. Estevez Hernandez, H. Hardtdegen, N. Demarina, T. Schapers","doi":"10.1109/SMICND.2010.5650262","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650262","url":null,"abstract":"We investigated the quantum transport in InAs nanowires. From the universal conductance fluctuations at 0.5 K a phase-coherence length of 300 nm was extracted. By averaging the gate-dependent conductance fluctuations a magnetoconductance peak due to weak antilocalization was found indicating the presence of spin-orbit coupling. In a nanowire quantum dot formed by three gate fingers single electron tunneling was confirmed","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132967852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650626
M. Braic, N. C. Zoita, V. Braic
We report successful deposition of polycrystalline InN thin films on un-etched Si wafers, without nucleation buffer, by reactive RF magnetron sputtering in pure N2 atmosphere. The modification of the structural and morphological characteristics of InN films are presented, as function of deposition pressure and deposition temperature.
{"title":"On the morphology and texture of InN thin films deposited by reactive RF-magnetron sputtering","authors":"M. Braic, N. C. Zoita, V. Braic","doi":"10.1109/SMICND.2010.5650626","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650626","url":null,"abstract":"We report successful deposition of polycrystalline InN thin films on un-etched Si wafers, without nucleation buffer, by reactive RF magnetron sputtering in pure N2 atmosphere. The modification of the structural and morphological characteristics of InN films are presented, as function of deposition pressure and deposition temperature.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132172370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649060
G. Delette, E. Pauty, C. Baum, R. Voicu
Hot embossing is a promising technology which can be integrated in a process chain for cost effective production of planar lighting optics. Polyamid polymer material was selected in order to fulfil the requirements of the process: embossing, conductive coating process followed by the electro deposition and removal of the substrate to produce the final master. However, it has been further optimised in order to increase the thermal conductivity and improve the reliability of the process. Finite Element Modelling has been performed in order to analyse thermal features of embossing step as a function of materials and process parameters.
{"title":"Analysis of the temperature distribution during embossing of diffractive optical elements by numerical simulation","authors":"G. Delette, E. Pauty, C. Baum, R. Voicu","doi":"10.1109/SMICND.2010.5649060","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649060","url":null,"abstract":"Hot embossing is a promising technology which can be integrated in a process chain for cost effective production of planar lighting optics. Polyamid polymer material was selected in order to fulfil the requirements of the process: embossing, conductive coating process followed by the electro deposition and removal of the substrate to produce the final master. However, it has been further optimised in order to increase the thermal conductivity and improve the reliability of the process. Finite Element Modelling has been performed in order to analyse thermal features of embossing step as a function of materials and process parameters.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134212609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650407
D. Dragoman, M. Dragoman
A method for the real-time detection of DNA bases is presented, based on their different current-voltage characteristics and, in particular, on their different differential conductance values at specific applied voltages. The device that allows the detection is a combination of a nanopore and a scanning tunneling microscope.
{"title":"Detection of DNA bases in real-time via negative differential conductance regions","authors":"D. Dragoman, M. Dragoman","doi":"10.1109/SMICND.2010.5650407","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650407","url":null,"abstract":"A method for the real-time detection of DNA bases is presented, based on their different current-voltage characteristics and, in particular, on their different differential conductance values at specific applied voltages. The device that allows the detection is a combination of a nanopore and a scanning tunneling microscope.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134627973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649091
A. Sanginario, D. Demarchi, Mauro Giorcelli, M. Castellino
The present application is based on the use of carbon nanotubes (CNTs) for biomolecular analysis using electrochemiluminescence (ECL) detection technique [1]–[9]. For this purpose we have grown self standing blocks of multi-wall CNTs (MWCNTs). The blocks were subsequently back-contacted and encapsulated into epoxy resin for their use as voltammetric electrodes. A ruthenium-complex solution has been used as ECL label. It has been observed a periodical light emission that lasts for hundreds of cycles, likely due to the CNTs structure. Thanks to a dataprocessing algorithm which exploits this behaviour, the experiments show that it is possible to obtain a great increase in detection limit.
{"title":"Carbon nanotube electrodes for electrochemiluminescence biosensors","authors":"A. Sanginario, D. Demarchi, Mauro Giorcelli, M. Castellino","doi":"10.1109/SMICND.2010.5649091","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649091","url":null,"abstract":"The present application is based on the use of carbon nanotubes (CNTs) for biomolecular analysis using electrochemiluminescence (ECL) detection technique [1]–[9]. For this purpose we have grown self standing blocks of multi-wall CNTs (MWCNTs). The blocks were subsequently back-contacted and encapsulated into epoxy resin for their use as voltammetric electrodes. A ruthenium-complex solution has been used as ECL label. It has been observed a periodical light emission that lasts for hundreds of cycles, likely due to the CNTs structure. Thanks to a dataprocessing algorithm which exploits this behaviour, the experiments show that it is possible to obtain a great increase in detection limit.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114525281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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