Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650742
A. Muller, S. Sinha, D. Neculoiu, D. Dascalu
The paper describes the simulation techniques used and results for the design of a 60 GHz antenna on package. Simulations performed with Zeland IE3D and analysis by Mathematica are presented and compared in order to get the 3D simulator in a correct setup for the 60 GHz antenna. The radiation efficiency is analyzed for different antenna topologies by the Zeland IE3D method of moments simulator; some specific techniques for improving it are presented.
{"title":"Modeling of antenna on package for the 60 GHz frequency band applications","authors":"A. Muller, S. Sinha, D. Neculoiu, D. Dascalu","doi":"10.1109/SMICND.2010.5650742","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650742","url":null,"abstract":"The paper describes the simulation techniques used and results for the design of a 60 GHz antenna on package. Simulations performed with Zeland IE3D and analysis by Mathematica are presented and compared in order to get the 3D simulator in a correct setup for the 60 GHz antenna. The radiation efficiency is analyzed for different antenna topologies by the Zeland IE3D method of moments simulator; some specific techniques for improving it are presented.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121745379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650626
M. Braic, N. C. Zoita, V. Braic
We report successful deposition of polycrystalline InN thin films on un-etched Si wafers, without nucleation buffer, by reactive RF magnetron sputtering in pure N2 atmosphere. The modification of the structural and morphological characteristics of InN films are presented, as function of deposition pressure and deposition temperature.
{"title":"On the morphology and texture of InN thin films deposited by reactive RF-magnetron sputtering","authors":"M. Braic, N. C. Zoita, V. Braic","doi":"10.1109/SMICND.2010.5650626","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650626","url":null,"abstract":"We report successful deposition of polycrystalline InN thin films on un-etched Si wafers, without nucleation buffer, by reactive RF magnetron sputtering in pure N2 atmosphere. The modification of the structural and morphological characteristics of InN films are presented, as function of deposition pressure and deposition temperature.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132172370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650597
M. Alexandru, V. Banu, M. Vellvehí, P. Godignon, J. Millán
Silicon carbide MESFETs are very attractive devices for high frequency applications, and communications. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications. SiC unipolar transistors, such as JFETs and MESFETs have also a promising potential for digital integrated circuits operating at high temperature (HT) and/or in harsh environments. An increasing demand for HT compliant circuits comes from intelligent power management, automotive industry, and intelligent sensors for harsh environment, space and aerospace as well. The present work is a demonstration of logic gates design with normally-on 4H-SiC MESFET devices using HT Spice models extracted from experimental measurements. A complete library of functional HT logic gates allows the implementation of complex logic embedded in power management circuitry.
{"title":"Design of logic gates for high temperature and harsh radiation environment made of 4H-SiC MESFET","authors":"M. Alexandru, V. Banu, M. Vellvehí, P. Godignon, J. Millán","doi":"10.1109/SMICND.2010.5650597","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650597","url":null,"abstract":"Silicon carbide MESFETs are very attractive devices for high frequency applications, and communications. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications. SiC unipolar transistors, such as JFETs and MESFETs have also a promising potential for digital integrated circuits operating at high temperature (HT) and/or in harsh environments. An increasing demand for HT compliant circuits comes from intelligent power management, automotive industry, and intelligent sensors for harsh environment, space and aerospace as well. The present work is a demonstration of logic gates design with normally-on 4H-SiC MESFET devices using HT Spice models extracted from experimental measurements. A complete library of functional HT logic gates allows the implementation of complex logic embedded in power management circuitry.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130324198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650262
D. Grutzmacher, C. Volk, K. Sladek, K. Weis, S. Estevez Hernandez, H. Hardtdegen, N. Demarina, T. Schapers
We investigated the quantum transport in InAs nanowires. From the universal conductance fluctuations at 0.5 K a phase-coherence length of 300 nm was extracted. By averaging the gate-dependent conductance fluctuations a magnetoconductance peak due to weak antilocalization was found indicating the presence of spin-orbit coupling. In a nanowire quantum dot formed by three gate fingers single electron tunneling was confirmed
{"title":"Quantum phenomena during electron transport in InAs nanowires","authors":"D. Grutzmacher, C. Volk, K. Sladek, K. Weis, S. Estevez Hernandez, H. Hardtdegen, N. Demarina, T. Schapers","doi":"10.1109/SMICND.2010.5650262","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650262","url":null,"abstract":"We investigated the quantum transport in InAs nanowires. From the universal conductance fluctuations at 0.5 K a phase-coherence length of 300 nm was extracted. By averaging the gate-dependent conductance fluctuations a magnetoconductance peak due to weak antilocalization was found indicating the presence of spin-orbit coupling. In a nanowire quantum dot formed by three gate fingers single electron tunneling was confirmed","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132967852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649068
K. Chan Shin Yu, A. Fehrembach, O. Gauthier-Lafaye, A. Monmayrant, S. Bonnefont, P. Arguel, F. Lozes-Dupuy, A. Sentenac
Resonant grating filters are promising alternatives to conventional spectral filters for narrowband free-space filtering. The high performances achieved experimentally by such filters in the near infrared have lead to a study of resonant grating filters in the mid infrared. In this paper, we show that GaAs/AlGaAs system is an interesting system for the realization of such filters and that limitations induced by the high optical index of GaAs can be overcome by a careful design.
{"title":"Design of a mid infrared resonant grating filter","authors":"K. Chan Shin Yu, A. Fehrembach, O. Gauthier-Lafaye, A. Monmayrant, S. Bonnefont, P. Arguel, F. Lozes-Dupuy, A. Sentenac","doi":"10.1109/SMICND.2010.5649068","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649068","url":null,"abstract":"Resonant grating filters are promising alternatives to conventional spectral filters for narrowband free-space filtering. The high performances achieved experimentally by such filters in the near infrared have lead to a study of resonant grating filters in the mid infrared. In this paper, we show that GaAs/AlGaAs system is an interesting system for the realization of such filters and that limitations induced by the high optical index of GaAs can be overcome by a careful design.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130833728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649060
G. Delette, E. Pauty, C. Baum, R. Voicu
Hot embossing is a promising technology which can be integrated in a process chain for cost effective production of planar lighting optics. Polyamid polymer material was selected in order to fulfil the requirements of the process: embossing, conductive coating process followed by the electro deposition and removal of the substrate to produce the final master. However, it has been further optimised in order to increase the thermal conductivity and improve the reliability of the process. Finite Element Modelling has been performed in order to analyse thermal features of embossing step as a function of materials and process parameters.
{"title":"Analysis of the temperature distribution during embossing of diffractive optical elements by numerical simulation","authors":"G. Delette, E. Pauty, C. Baum, R. Voicu","doi":"10.1109/SMICND.2010.5649060","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649060","url":null,"abstract":"Hot embossing is a promising technology which can be integrated in a process chain for cost effective production of planar lighting optics. Polyamid polymer material was selected in order to fulfil the requirements of the process: embossing, conductive coating process followed by the electro deposition and removal of the substrate to produce the final master. However, it has been further optimised in order to increase the thermal conductivity and improve the reliability of the process. Finite Element Modelling has been performed in order to analyse thermal features of embossing step as a function of materials and process parameters.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134212609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650476
J. Lambrechts, S. Sinha
A BiCMOS Silicon Germanium cross-coupled differential-pair narrowband voltage controlled oscillator with a tail-current shaping technique to improve phase noise performance is implemented and experimental results are presented. Several VCOs are fabricated on-chip to serve for a practical comparison and the results are also compared to simulated results. Simulation results provided a 3.3 dBc/Hz improvement from −105.3 dBc/Hz to −108.6 dBc/Hz at a 1 MHz offset frequency from the 5 GHz carrier. Measured results confirm the correlation of phase noise performance between simulation and prototype. Acceptable phase noise performance compared to previous works is achieved using a relatively cost-effective technology.
{"title":"Phase noise analysis of a tail-current shaping technique employed on a BiCMOS voltage controlled oscillator","authors":"J. Lambrechts, S. Sinha","doi":"10.1109/SMICND.2010.5650476","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650476","url":null,"abstract":"A BiCMOS Silicon Germanium cross-coupled differential-pair narrowband voltage controlled oscillator with a tail-current shaping technique to improve phase noise performance is implemented and experimental results are presented. Several VCOs are fabricated on-chip to serve for a practical comparison and the results are also compared to simulated results. Simulation results provided a 3.3 dBc/Hz improvement from −105.3 dBc/Hz to −108.6 dBc/Hz at a 1 MHz offset frequency from the 5 GHz carrier. Measured results confirm the correlation of phase noise performance between simulation and prototype. Acceptable phase noise performance compared to previous works is achieved using a relatively cost-effective technology.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"345 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134009479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650449
C. Pastravanu, I. Alexa, I. Cretescu, E. Popovici
TiO2 is the most frequently employed photocatalyst in realising complete mineralization of organic pollutants in water treatment. Its large bandgap energy necessitates though UV excitation to induce charge separation within the particle. Nitrogen doped into substitutional sites of TiO2 has shown bandgap narrowing and photocatalytic activity in the visible light. N-doped and non-doped mesoporous titania were synthesized using hydrothermal and ultrasound methods. Titanium-tetraisopropoxide was used as Ti precursor. UV-VIS and N2 adsorbtion-desorbtion techniques were used to investigate the structure, morphology and optical properties of these photocatalysts. The photocatalytic activity of mesoporous titania was studied by different dyes photoreactions.
{"title":"Photocatalytic properties of N-doped TiO2. the effect of the synthesis procedure","authors":"C. Pastravanu, I. Alexa, I. Cretescu, E. Popovici","doi":"10.1109/SMICND.2010.5650449","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650449","url":null,"abstract":"TiO2 is the most frequently employed photocatalyst in realising complete mineralization of organic pollutants in water treatment. Its large bandgap energy necessitates though UV excitation to induce charge separation within the particle. Nitrogen doped into substitutional sites of TiO2 has shown bandgap narrowing and photocatalytic activity in the visible light. N-doped and non-doped mesoporous titania were synthesized using hydrothermal and ultrasound methods. Titanium-tetraisopropoxide was used as Ti precursor. UV-VIS and N2 adsorbtion-desorbtion techniques were used to investigate the structure, morphology and optical properties of these photocatalysts. The photocatalytic activity of mesoporous titania was studied by different dyes photoreactions.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123689526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650407
D. Dragoman, M. Dragoman
A method for the real-time detection of DNA bases is presented, based on their different current-voltage characteristics and, in particular, on their different differential conductance values at specific applied voltages. The device that allows the detection is a combination of a nanopore and a scanning tunneling microscope.
{"title":"Detection of DNA bases in real-time via negative differential conductance regions","authors":"D. Dragoman, M. Dragoman","doi":"10.1109/SMICND.2010.5650407","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650407","url":null,"abstract":"A method for the real-time detection of DNA bases is presented, based on their different current-voltage characteristics and, in particular, on their different differential conductance values at specific applied voltages. The device that allows the detection is a combination of a nanopore and a scanning tunneling microscope.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134627973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649091
A. Sanginario, D. Demarchi, Mauro Giorcelli, M. Castellino
The present application is based on the use of carbon nanotubes (CNTs) for biomolecular analysis using electrochemiluminescence (ECL) detection technique [1]–[9]. For this purpose we have grown self standing blocks of multi-wall CNTs (MWCNTs). The blocks were subsequently back-contacted and encapsulated into epoxy resin for their use as voltammetric electrodes. A ruthenium-complex solution has been used as ECL label. It has been observed a periodical light emission that lasts for hundreds of cycles, likely due to the CNTs structure. Thanks to a dataprocessing algorithm which exploits this behaviour, the experiments show that it is possible to obtain a great increase in detection limit.
{"title":"Carbon nanotube electrodes for electrochemiluminescence biosensors","authors":"A. Sanginario, D. Demarchi, Mauro Giorcelli, M. Castellino","doi":"10.1109/SMICND.2010.5649091","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649091","url":null,"abstract":"The present application is based on the use of carbon nanotubes (CNTs) for biomolecular analysis using electrochemiluminescence (ECL) detection technique [1]–[9]. For this purpose we have grown self standing blocks of multi-wall CNTs (MWCNTs). The blocks were subsequently back-contacted and encapsulated into epoxy resin for their use as voltammetric electrodes. A ruthenium-complex solution has been used as ECL label. It has been observed a periodical light emission that lasts for hundreds of cycles, likely due to the CNTs structure. Thanks to a dataprocessing algorithm which exploits this behaviour, the experiments show that it is possible to obtain a great increase in detection limit.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114525281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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