Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650532
C. Stănescu, R. Iacob, C. Dinca, C. Caracas, O. Profirescu
This paper presents an adjustable 300mA CMOS LDO built in a double-metal 0.5µm 16V CMOS technology. It uses a low-current bandgap which needs only 1.5µA. It includes a symmetrical op amp configured as voltage follower, having a built-in adaptive bias behavior. The circuit consumes 10µA without load, less than 40 µA at full load, and uses a 1.25V voltage reference. Dropout voltage at 300mA is typical 200mV. Input voltage range is 2.3V to 7V.
{"title":"300mA adjustable LDO with 10µA ground current","authors":"C. Stănescu, R. Iacob, C. Dinca, C. Caracas, O. Profirescu","doi":"10.1109/SMICND.2010.5650532","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650532","url":null,"abstract":"This paper presents an adjustable 300mA CMOS LDO built in a double-metal 0.5µm 16V CMOS technology. It uses a low-current bandgap which needs only 1.5µA. It includes a symmetrical op amp configured as voltage follower, having a built-in adaptive bias behavior. The circuit consumes 10µA without load, less than 40 µA at full load, and uses a 1.25V voltage reference. Dropout voltage at 300mA is typical 200mV. Input voltage range is 2.3V to 7V.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129529334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650568
T. Sandu
We analyse the adequacy of the single-band model in Si based resonant tunneling devices (RTD's) as opposed to a multi-band model which is closer to real systems due to the fact that Si is an indirect bandgap semiconductor. Our calculations based on non-equilibrium Green function formalism show that a single band model with tunneling light electrons in Si is quantitatively sound in simulating Si based RTD's. It is found that light electrons contribute not only through 2-dimensional (2D) transverse density of states but also through the transparency of the barriers. Thus a single-band model can be safely used in applications.
{"title":"Quantitative assessment of the single-band model in the silicon based resonant tunneling devices","authors":"T. Sandu","doi":"10.1109/SMICND.2010.5650568","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650568","url":null,"abstract":"We analyse the adequacy of the single-band model in Si based resonant tunneling devices (RTD's) as opposed to a multi-band model which is closer to real systems due to the fact that Si is an indirect bandgap semiconductor. Our calculations based on non-equilibrium Green function formalism show that a single band model with tunneling light electrons in Si is quantitatively sound in simulating Si based RTD's. It is found that light electrons contribute not only through 2-dimensional (2D) transverse density of states but also through the transparency of the barriers. Thus a single-band model can be safely used in applications.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124581115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650655
C. Baicea, A. Ivan, C. Trisca-Rusu, A. Nechifor, D. Vãireanu, Ș. Voicu, G. Nechifor
In order to combine the advantages of silica as an inorganic material (chemical resitance, optical properties) to that of polypyrrole as a conductive polymer one has attempted to obtain novel silica-polypyrrole composite particles by a newly improved technique consisting to in situ polymerization of adsorbed pyrrole into silica. The new synthesized material was characterized by FT-IR spectroscopy, Optical and Scanning Electron Microscopy and the ionic conductive properties were evaluated by Electrochemical Impedance Spectroscopy.
{"title":"Ionic conductive silica-polypyrrole composites obtained by in-situ polymerization","authors":"C. Baicea, A. Ivan, C. Trisca-Rusu, A. Nechifor, D. Vãireanu, Ș. Voicu, G. Nechifor","doi":"10.1109/SMICND.2010.5650655","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650655","url":null,"abstract":"In order to combine the advantages of silica as an inorganic material (chemical resitance, optical properties) to that of polypyrrole as a conductive polymer one has attempted to obtain novel silica-polypyrrole composite particles by a newly improved technique consisting to in situ polymerization of adsorbed pyrrole into silica. The new synthesized material was characterized by FT-IR spectroscopy, Optical and Scanning Electron Microscopy and the ionic conductive properties were evaluated by Electrochemical Impedance Spectroscopy.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122901387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650477
A. Cadiș, E. Popovici, E. Bica, I. Perhaita, L. Barbu-Tudoran, E. Indrea
Manganese-doped zinc sulfide nanocrystalline powders have been synthesized from zinc-manganese acetate and sodium sulfide, in methanol containing methacrylic acid as additive. Precipitation was performed at low temperature, using the reagent simultaneous addition technique. All samples were characterized by photoluminescence spectroscopy electron microscopy and X-ray diffraction. A correlation between the preparation conditions and optical and morphological characteristics of ZnS:Mn2+ powders was established.
{"title":"Studies on the synthesis of manganese doped zinc sulfide nanocrystalline powders using methacrylic acid as additive","authors":"A. Cadiș, E. Popovici, E. Bica, I. Perhaita, L. Barbu-Tudoran, E. Indrea","doi":"10.1109/SMICND.2010.5650477","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650477","url":null,"abstract":"Manganese-doped zinc sulfide nanocrystalline powders have been synthesized from zinc-manganese acetate and sodium sulfide, in methanol containing methacrylic acid as additive. Precipitation was performed at low temperature, using the reagent simultaneous addition technique. All samples were characterized by photoluminescence spectroscopy electron microscopy and X-ray diffraction. A correlation between the preparation conditions and optical and morphological characteristics of ZnS:Mn2+ powders was established.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122311909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650285
W. Yu, B. Zhang, E. Durgun-Ozben, R. Minamisawa, R. Lupták, M. Hagedorn, B. Hollander, J. Schubert, J. Hartmann, K. Bourdelle, Q. Zhao, D. Buca, S. Mantl
The implementation of more powerful materials into leading edge CMOS devices allows performance improvements without scaling and without changing the circuit design libraries. This highly motivates the research on novel materials. In this paper we present various transistor fabrication processes like “gate first” and “replacement gate” for different channel stack configurations like strained Si, strained SiGe alloy layers and Ge channels with HfO2 and novel high-k dielectrics and metal gates. We discuss HfO2 as a reference material and various ternary rare earth oxides with k ≈ 30 desired for the next technology nodes in order to ensure optimum gate control and minimum short channel effects.
{"title":"High mobility Si-Ge channels and novel high-k materials for nanomosfets","authors":"W. Yu, B. Zhang, E. Durgun-Ozben, R. Minamisawa, R. Lupták, M. Hagedorn, B. Hollander, J. Schubert, J. Hartmann, K. Bourdelle, Q. Zhao, D. Buca, S. Mantl","doi":"10.1109/SMICND.2010.5650285","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650285","url":null,"abstract":"The implementation of more powerful materials into leading edge CMOS devices allows performance improvements without scaling and without changing the circuit design libraries. This highly motivates the research on novel materials. In this paper we present various transistor fabrication processes like “gate first” and “replacement gate” for different channel stack configurations like strained Si, strained SiGe alloy layers and Ge channels with HfO2 and novel high-k dielectrics and metal gates. We discuss HfO2 as a reference material and various ternary rare earth oxides with k ≈ 30 desired for the next technology nodes in order to ensure optimum gate control and minimum short channel effects.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114663282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650770
G. Sajin, S. Simion, F. Craciunoiu, A. Bunea, A. Muller, A. Dinescu
This paper presents the design and manufacturing of a metamaterial Composite Right/Left Handed (CRLH) directional coupler on silicon substrate in coplanar waveguide (CPW) configuration, with a frequency band between 26–28 GHz. The design makes use of 4 CRLH cells, cascaded and coupled two by two in order to obtain the directional coupler structure. The device was processed on a 500µm thick silicon substrate with a Au/Cr metallization with the purpose of easy integration in more complex millimeter wave integrated circuits. The measurement of working frequency, reflection loss and isolation of the coupler validates the calculated values of these parameters.
{"title":"Metamaterial millimeter wave directional coupler on silicon substrate","authors":"G. Sajin, S. Simion, F. Craciunoiu, A. Bunea, A. Muller, A. Dinescu","doi":"10.1109/SMICND.2010.5650770","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650770","url":null,"abstract":"This paper presents the design and manufacturing of a metamaterial Composite Right/Left Handed (CRLH) directional coupler on silicon substrate in coplanar waveguide (CPW) configuration, with a frequency band between 26–28 GHz. The design makes use of 4 CRLH cells, cascaded and coupled two by two in order to obtain the directional coupler structure. The device was processed on a 500µm thick silicon substrate with a Au/Cr metallization with the purpose of easy integration in more complex millimeter wave integrated circuits. The measurement of working frequency, reflection loss and isolation of the coupler validates the calculated values of these parameters.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114803603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649073
I. Bucur, S. Serban, A. Surpăteanu, N. Cupcea, C. Viespe, C. Grigoriu, C. Toader, N. Grigoriu
In this paper we studied a device based on array of six different sensors with surface acoustic wave for detections and recognition of three chemical warfare agents (Chloropicrin, Soman and Lewisite). The sensors are “delay line” type with a center frequency of 69.4 MHz. It presents an original algorithm to identify the nature and concentration of gas from a finite range of possible gases. Numerical program developed to implement this algorithm, provides to operators all the particulars of gas and an indicator of credibility of the results provided as a measure of the degree of disturbance of the signals received from sensors.
{"title":"The development of a sensor array for the detection and recognition of chemical warfare agents","authors":"I. Bucur, S. Serban, A. Surpăteanu, N. Cupcea, C. Viespe, C. Grigoriu, C. Toader, N. Grigoriu","doi":"10.1109/SMICND.2010.5649073","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649073","url":null,"abstract":"In this paper we studied a device based on array of six different sensors with surface acoustic wave for detections and recognition of three chemical warfare agents (Chloropicrin, Soman and Lewisite). The sensors are “delay line” type with a center frequency of 69.4 MHz. It presents an original algorithm to identify the nature and concentration of gas from a finite range of possible gases. Numerical program developed to implement this algorithm, provides to operators all the particulars of gas and an indicator of credibility of the results provided as a measure of the degree of disturbance of the signals received from sensors.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"56 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120901790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650530
I. Vornicu, L. Goras
The possibilities of image processing using the spatio-temporal dynamics of a Cellular Neural Network (CNN) type CMOS analog parallel architecture are investigated. It is shown that the network, consisting of an array of identically coupled identical cells, can be programmed to perform various spatial filtering operations and segmentation in a very short time and with low power consumption. Comparison with previously reported segmentation techniques and simulation results are discussed.
{"title":"Image processing using a CMOS analog parallel architecture","authors":"I. Vornicu, L. Goras","doi":"10.1109/SMICND.2010.5650530","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650530","url":null,"abstract":"The possibilities of image processing using the spatio-temporal dynamics of a Cellular Neural Network (CNN) type CMOS analog parallel architecture are investigated. It is shown that the network, consisting of an array of identically coupled identical cells, can be programmed to perform various spatial filtering operations and segmentation in a very short time and with low power consumption. Comparison with previously reported segmentation techniques and simulation results are discussed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124073192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649077
C. Simion, A. Tomescu-St, noiu
The way in which surface changes are transduced into a variation of an electrical parameter (often electrical resistance) depends on the surface oxidation level, material morphology its semiconductor behaviour, etc. Therefore, if one wants to understand more about the way in which gas-surface interactions affect the gas sensing properties of material, complex phenomenological and spectroscopic investigations are needed. Herein, by simultaneous DC and relative work function investigations we could explain the differences induced by the MOX semiconductor character (n and p-type) to the surface phenomena transduction mechanism.
{"title":"Differences in the gas sensing properties readout with n and p-type MOX materials","authors":"C. Simion, A. Tomescu-St, noiu","doi":"10.1109/SMICND.2010.5649077","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649077","url":null,"abstract":"The way in which surface changes are transduced into a variation of an electrical parameter (often electrical resistance) depends on the surface oxidation level, material morphology its semiconductor behaviour, etc. Therefore, if one wants to understand more about the way in which gas-surface interactions affect the gas sensing properties of material, complex phenomenological and spectroscopic investigations are needed. Herein, by simultaneous DC and relative work function investigations we could explain the differences induced by the MOX semiconductor character (n and p-type) to the surface phenomena transduction mechanism.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126689740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650897
V. Vlad, A. Petris, T. Bazaru, M. Miu
We study the effective optical linear and the effective optical third-order nonlinear response of some Si based nano-structures. Particularly, the optical response of nano-porous silicon layers on crystalline silicon substrate, in function of fill fraction and light wavelength is investigated. Starting from Bruggeman's effective medium theory and Sellmeier's dispersion formalism (for silicon), we derive simplified formulae that describe the dependences of effective optical linear and third-order nonlinear response on both fill fraction and wavelength, in the spectral range covering visible and near-infrared. They are in agreement with the experimental data obtained from reflectivity measurement (in the case of effective linear refractive index) and by reflection intensity scan (in the case of effective third-order nonlinearity). Furthermore, the electronic and thermal nonlinear optical response of periodically nano-patterned and un-patterned silicon-on-insulator (SOI) is also studied using a reflection Z-scan setup with a high-repetition-rate femto-laser (at 800 nm wavelength) and a new procedure for discrimination between electronic and thermal nonlinearities. The electronic nonlinear response of nano-structured SOI is strongly enhanced in comparison with those of un-patterned SOI.
{"title":"Theoretical and experimental study of the effective linear and nonlinear optical response of nano-structured silicon","authors":"V. Vlad, A. Petris, T. Bazaru, M. Miu","doi":"10.1109/SMICND.2010.5650897","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650897","url":null,"abstract":"We study the effective optical linear and the effective optical third-order nonlinear response of some Si based nano-structures. Particularly, the optical response of nano-porous silicon layers on crystalline silicon substrate, in function of fill fraction and light wavelength is investigated. Starting from Bruggeman's effective medium theory and Sellmeier's dispersion formalism (for silicon), we derive simplified formulae that describe the dependences of effective optical linear and third-order nonlinear response on both fill fraction and wavelength, in the spectral range covering visible and near-infrared. They are in agreement with the experimental data obtained from reflectivity measurement (in the case of effective linear refractive index) and by reflection intensity scan (in the case of effective third-order nonlinearity). Furthermore, the electronic and thermal nonlinear optical response of periodically nano-patterned and un-patterned silicon-on-insulator (SOI) is also studied using a reflection Z-scan setup with a high-repetition-rate femto-laser (at 800 nm wavelength) and a new procedure for discrimination between electronic and thermal nonlinearities. The electronic nonlinear response of nano-structured SOI is strongly enhanced in comparison with those of un-patterned SOI.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124863521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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