Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650739
D. Neculoiu, A. Muller, A. Stefanescu, T. Vaha-Heikkila, I. Petrini, C. Buiculescu
This paper presents the electromagnetic modelling and design of several millimetre wave components and circuits fabricated using Low-Temperature Co-fired Ceramic technology. The circuits include embedded transmission lines and vertical transitions designed to operate in the W band.
{"title":"Electromagnetic design of W-band circuits in LTCC technology","authors":"D. Neculoiu, A. Muller, A. Stefanescu, T. Vaha-Heikkila, I. Petrini, C. Buiculescu","doi":"10.1109/SMICND.2010.5650739","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650739","url":null,"abstract":"This paper presents the electromagnetic modelling and design of several millimetre wave components and circuits fabricated using Low-Temperature Co-fired Ceramic technology. The circuits include embedded transmission lines and vertical transitions designed to operate in the W band.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130581789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650449
C. Pastravanu, I. Alexa, I. Cretescu, E. Popovici
TiO2 is the most frequently employed photocatalyst in realising complete mineralization of organic pollutants in water treatment. Its large bandgap energy necessitates though UV excitation to induce charge separation within the particle. Nitrogen doped into substitutional sites of TiO2 has shown bandgap narrowing and photocatalytic activity in the visible light. N-doped and non-doped mesoporous titania were synthesized using hydrothermal and ultrasound methods. Titanium-tetraisopropoxide was used as Ti precursor. UV-VIS and N2 adsorbtion-desorbtion techniques were used to investigate the structure, morphology and optical properties of these photocatalysts. The photocatalytic activity of mesoporous titania was studied by different dyes photoreactions.
{"title":"Photocatalytic properties of N-doped TiO2. the effect of the synthesis procedure","authors":"C. Pastravanu, I. Alexa, I. Cretescu, E. Popovici","doi":"10.1109/SMICND.2010.5650449","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650449","url":null,"abstract":"TiO2 is the most frequently employed photocatalyst in realising complete mineralization of organic pollutants in water treatment. Its large bandgap energy necessitates though UV excitation to induce charge separation within the particle. Nitrogen doped into substitutional sites of TiO2 has shown bandgap narrowing and photocatalytic activity in the visible light. N-doped and non-doped mesoporous titania were synthesized using hydrothermal and ultrasound methods. Titanium-tetraisopropoxide was used as Ti precursor. UV-VIS and N2 adsorbtion-desorbtion techniques were used to investigate the structure, morphology and optical properties of these photocatalysts. The photocatalytic activity of mesoporous titania was studied by different dyes photoreactions.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123689526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650897
V. Vlad, A. Petris, T. Bazaru, M. Miu
We study the effective optical linear and the effective optical third-order nonlinear response of some Si based nano-structures. Particularly, the optical response of nano-porous silicon layers on crystalline silicon substrate, in function of fill fraction and light wavelength is investigated. Starting from Bruggeman's effective medium theory and Sellmeier's dispersion formalism (for silicon), we derive simplified formulae that describe the dependences of effective optical linear and third-order nonlinear response on both fill fraction and wavelength, in the spectral range covering visible and near-infrared. They are in agreement with the experimental data obtained from reflectivity measurement (in the case of effective linear refractive index) and by reflection intensity scan (in the case of effective third-order nonlinearity). Furthermore, the electronic and thermal nonlinear optical response of periodically nano-patterned and un-patterned silicon-on-insulator (SOI) is also studied using a reflection Z-scan setup with a high-repetition-rate femto-laser (at 800 nm wavelength) and a new procedure for discrimination between electronic and thermal nonlinearities. The electronic nonlinear response of nano-structured SOI is strongly enhanced in comparison with those of un-patterned SOI.
{"title":"Theoretical and experimental study of the effective linear and nonlinear optical response of nano-structured silicon","authors":"V. Vlad, A. Petris, T. Bazaru, M. Miu","doi":"10.1109/SMICND.2010.5650897","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650897","url":null,"abstract":"We study the effective optical linear and the effective optical third-order nonlinear response of some Si based nano-structures. Particularly, the optical response of nano-porous silicon layers on crystalline silicon substrate, in function of fill fraction and light wavelength is investigated. Starting from Bruggeman's effective medium theory and Sellmeier's dispersion formalism (for silicon), we derive simplified formulae that describe the dependences of effective optical linear and third-order nonlinear response on both fill fraction and wavelength, in the spectral range covering visible and near-infrared. They are in agreement with the experimental data obtained from reflectivity measurement (in the case of effective linear refractive index) and by reflection intensity scan (in the case of effective third-order nonlinearity). Furthermore, the electronic and thermal nonlinear optical response of periodically nano-patterned and un-patterned silicon-on-insulator (SOI) is also studied using a reflection Z-scan setup with a high-repetition-rate femto-laser (at 800 nm wavelength) and a new procedure for discrimination between electronic and thermal nonlinearities. The electronic nonlinear response of nano-structured SOI is strongly enhanced in comparison with those of un-patterned SOI.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124863521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650742
A. Muller, S. Sinha, D. Neculoiu, D. Dascalu
The paper describes the simulation techniques used and results for the design of a 60 GHz antenna on package. Simulations performed with Zeland IE3D and analysis by Mathematica are presented and compared in order to get the 3D simulator in a correct setup for the 60 GHz antenna. The radiation efficiency is analyzed for different antenna topologies by the Zeland IE3D method of moments simulator; some specific techniques for improving it are presented.
{"title":"Modeling of antenna on package for the 60 GHz frequency band applications","authors":"A. Muller, S. Sinha, D. Neculoiu, D. Dascalu","doi":"10.1109/SMICND.2010.5650742","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650742","url":null,"abstract":"The paper describes the simulation techniques used and results for the design of a 60 GHz antenna on package. Simulations performed with Zeland IE3D and analysis by Mathematica are presented and compared in order to get the 3D simulator in a correct setup for the 60 GHz antenna. The radiation efficiency is analyzed for different antenna topologies by the Zeland IE3D method of moments simulator; some specific techniques for improving it are presented.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121745379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650477
A. Cadiș, E. Popovici, E. Bica, I. Perhaita, L. Barbu-Tudoran, E. Indrea
Manganese-doped zinc sulfide nanocrystalline powders have been synthesized from zinc-manganese acetate and sodium sulfide, in methanol containing methacrylic acid as additive. Precipitation was performed at low temperature, using the reagent simultaneous addition technique. All samples were characterized by photoluminescence spectroscopy electron microscopy and X-ray diffraction. A correlation between the preparation conditions and optical and morphological characteristics of ZnS:Mn2+ powders was established.
{"title":"Studies on the synthesis of manganese doped zinc sulfide nanocrystalline powders using methacrylic acid as additive","authors":"A. Cadiș, E. Popovici, E. Bica, I. Perhaita, L. Barbu-Tudoran, E. Indrea","doi":"10.1109/SMICND.2010.5650477","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650477","url":null,"abstract":"Manganese-doped zinc sulfide nanocrystalline powders have been synthesized from zinc-manganese acetate and sodium sulfide, in methanol containing methacrylic acid as additive. Precipitation was performed at low temperature, using the reagent simultaneous addition technique. All samples were characterized by photoluminescence spectroscopy electron microscopy and X-ray diffraction. A correlation between the preparation conditions and optical and morphological characteristics of ZnS:Mn2+ powders was established.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122311909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649077
C. Simion, A. Tomescu-St, noiu
The way in which surface changes are transduced into a variation of an electrical parameter (often electrical resistance) depends on the surface oxidation level, material morphology its semiconductor behaviour, etc. Therefore, if one wants to understand more about the way in which gas-surface interactions affect the gas sensing properties of material, complex phenomenological and spectroscopic investigations are needed. Herein, by simultaneous DC and relative work function investigations we could explain the differences induced by the MOX semiconductor character (n and p-type) to the surface phenomena transduction mechanism.
{"title":"Differences in the gas sensing properties readout with n and p-type MOX materials","authors":"C. Simion, A. Tomescu-St, noiu","doi":"10.1109/SMICND.2010.5649077","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649077","url":null,"abstract":"The way in which surface changes are transduced into a variation of an electrical parameter (often electrical resistance) depends on the surface oxidation level, material morphology its semiconductor behaviour, etc. Therefore, if one wants to understand more about the way in which gas-surface interactions affect the gas sensing properties of material, complex phenomenological and spectroscopic investigations are needed. Herein, by simultaneous DC and relative work function investigations we could explain the differences induced by the MOX semiconductor character (n and p-type) to the surface phenomena transduction mechanism.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126689740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650285
W. Yu, B. Zhang, E. Durgun-Ozben, R. Minamisawa, R. Lupták, M. Hagedorn, B. Hollander, J. Schubert, J. Hartmann, K. Bourdelle, Q. Zhao, D. Buca, S. Mantl
The implementation of more powerful materials into leading edge CMOS devices allows performance improvements without scaling and without changing the circuit design libraries. This highly motivates the research on novel materials. In this paper we present various transistor fabrication processes like “gate first” and “replacement gate” for different channel stack configurations like strained Si, strained SiGe alloy layers and Ge channels with HfO2 and novel high-k dielectrics and metal gates. We discuss HfO2 as a reference material and various ternary rare earth oxides with k ≈ 30 desired for the next technology nodes in order to ensure optimum gate control and minimum short channel effects.
{"title":"High mobility Si-Ge channels and novel high-k materials for nanomosfets","authors":"W. Yu, B. Zhang, E. Durgun-Ozben, R. Minamisawa, R. Lupták, M. Hagedorn, B. Hollander, J. Schubert, J. Hartmann, K. Bourdelle, Q. Zhao, D. Buca, S. Mantl","doi":"10.1109/SMICND.2010.5650285","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650285","url":null,"abstract":"The implementation of more powerful materials into leading edge CMOS devices allows performance improvements without scaling and without changing the circuit design libraries. This highly motivates the research on novel materials. In this paper we present various transistor fabrication processes like “gate first” and “replacement gate” for different channel stack configurations like strained Si, strained SiGe alloy layers and Ge channels with HfO2 and novel high-k dielectrics and metal gates. We discuss HfO2 as a reference material and various ternary rare earth oxides with k ≈ 30 desired for the next technology nodes in order to ensure optimum gate control and minimum short channel effects.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114663282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650597
M. Alexandru, V. Banu, M. Vellvehí, P. Godignon, J. Millán
Silicon carbide MESFETs are very attractive devices for high frequency applications, and communications. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications. SiC unipolar transistors, such as JFETs and MESFETs have also a promising potential for digital integrated circuits operating at high temperature (HT) and/or in harsh environments. An increasing demand for HT compliant circuits comes from intelligent power management, automotive industry, and intelligent sensors for harsh environment, space and aerospace as well. The present work is a demonstration of logic gates design with normally-on 4H-SiC MESFET devices using HT Spice models extracted from experimental measurements. A complete library of functional HT logic gates allows the implementation of complex logic embedded in power management circuitry.
{"title":"Design of logic gates for high temperature and harsh radiation environment made of 4H-SiC MESFET","authors":"M. Alexandru, V. Banu, M. Vellvehí, P. Godignon, J. Millán","doi":"10.1109/SMICND.2010.5650597","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650597","url":null,"abstract":"Silicon carbide MESFETs are very attractive devices for high frequency applications, and communications. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications. SiC unipolar transistors, such as JFETs and MESFETs have also a promising potential for digital integrated circuits operating at high temperature (HT) and/or in harsh environments. An increasing demand for HT compliant circuits comes from intelligent power management, automotive industry, and intelligent sensors for harsh environment, space and aerospace as well. The present work is a demonstration of logic gates design with normally-on 4H-SiC MESFET devices using HT Spice models extracted from experimental measurements. A complete library of functional HT logic gates allows the implementation of complex logic embedded in power management circuitry.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130324198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649068
K. Chan Shin Yu, A. Fehrembach, O. Gauthier-Lafaye, A. Monmayrant, S. Bonnefont, P. Arguel, F. Lozes-Dupuy, A. Sentenac
Resonant grating filters are promising alternatives to conventional spectral filters for narrowband free-space filtering. The high performances achieved experimentally by such filters in the near infrared have lead to a study of resonant grating filters in the mid infrared. In this paper, we show that GaAs/AlGaAs system is an interesting system for the realization of such filters and that limitations induced by the high optical index of GaAs can be overcome by a careful design.
{"title":"Design of a mid infrared resonant grating filter","authors":"K. Chan Shin Yu, A. Fehrembach, O. Gauthier-Lafaye, A. Monmayrant, S. Bonnefont, P. Arguel, F. Lozes-Dupuy, A. Sentenac","doi":"10.1109/SMICND.2010.5649068","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649068","url":null,"abstract":"Resonant grating filters are promising alternatives to conventional spectral filters for narrowband free-space filtering. The high performances achieved experimentally by such filters in the near infrared have lead to a study of resonant grating filters in the mid infrared. In this paper, we show that GaAs/AlGaAs system is an interesting system for the realization of such filters and that limitations induced by the high optical index of GaAs can be overcome by a careful design.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130833728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650530
I. Vornicu, L. Goras
The possibilities of image processing using the spatio-temporal dynamics of a Cellular Neural Network (CNN) type CMOS analog parallel architecture are investigated. It is shown that the network, consisting of an array of identically coupled identical cells, can be programmed to perform various spatial filtering operations and segmentation in a very short time and with low power consumption. Comparison with previously reported segmentation techniques and simulation results are discussed.
{"title":"Image processing using a CMOS analog parallel architecture","authors":"I. Vornicu, L. Goras","doi":"10.1109/SMICND.2010.5650530","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650530","url":null,"abstract":"The possibilities of image processing using the spatio-temporal dynamics of a Cellular Neural Network (CNN) type CMOS analog parallel architecture are investigated. It is shown that the network, consisting of an array of identically coupled identical cells, can be programmed to perform various spatial filtering operations and segmentation in a very short time and with low power consumption. Comparison with previously reported segmentation techniques and simulation results are discussed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124073192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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