Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452538
Hang Li, Hobie Yun, Wei Liang, Aihua Dong, M. Miao, K. Sundaram
Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN integrated circuits and integrated passive devices (IPD). To analyze the dielectric breakdown mechanisms and predict the lifetime of SiN MIMCAPs under electrostatic discharge (ESD) conditions, characteristics of MIMCAPs with different dimensions (dielectric thickness and area) and various ambient temperatures under ESD stresses are investigated. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) system and the Signatone S1060 heating module. Then, the breakdown voltage variation of MIMCAPs with respect to dimensions and temperatures under different types of transmission line pulsing (TLP) stresses is discussed. Furthermore, with the transformative version of power law employed, the lifetime (time dependent dielectric breakdown, TDDB) of MIMCAPs is analyzed.
{"title":"Characterization of Dielectric Breakdown and Lifetime Analysis for Silicon Nitride Metal-Insulator-Metal Capacitors under Electrostatic Discharge Stresses","authors":"Hang Li, Hobie Yun, Wei Liang, Aihua Dong, M. Miao, K. Sundaram","doi":"10.1109/IPFA.2018.8452538","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452538","url":null,"abstract":"Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN integrated circuits and integrated passive devices (IPD). To analyze the dielectric breakdown mechanisms and predict the lifetime of SiN MIMCAPs under electrostatic discharge (ESD) conditions, characteristics of MIMCAPs with different dimensions (dielectric thickness and area) and various ambient temperatures under ESD stresses are investigated. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) system and the Signatone S1060 heating module. Then, the breakdown voltage variation of MIMCAPs with respect to dimensions and temperatures under different types of transmission line pulsing (TLP) stresses is discussed. Furthermore, with the transformative version of power law employed, the lifetime (time dependent dielectric breakdown, TDDB) of MIMCAPs is analyzed.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"408 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133634221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452606
Mary Grace C. Raborar, Jae Saladar, R. Mendaros
A different kind of challenge was encountered during the failure analysis (FA) of several customer-returned power devices. Determination of the failure mechanism (FM), silicon cratering or cracking, was straightforward; however, root cause process ownership identification was challenging. This paper presents the laborious analyses to identify the process that induced the failure.
{"title":"Silicon Crack Root Cause Identification in a Wafer Level Chip Scale Package","authors":"Mary Grace C. Raborar, Jae Saladar, R. Mendaros","doi":"10.1109/IPFA.2018.8452606","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452606","url":null,"abstract":"A different kind of challenge was encountered during the failure analysis (FA) of several customer-returned power devices. Determination of the failure mechanism (FM), silicon cratering or cracking, was straightforward; however, root cause process ownership identification was challenging. This paper presents the laborious analyses to identify the process that induced the failure.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115047676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452172
Kotaro Hirose, K. Tanahashi, H. Takato, Yasuo Cho
The carrier distribution in solar cell is important evaluation target. Scanning nonlinear dielectric microscopy is applied to the cross section of phosphorus implanted emitter in monocrystalline silicon solar cell and visualizes the carrier distribution quantitatively. The effective diffusivities of phosphorus are estimated from the experimental results. Then, the three-dimensional carrier distribution is simulated. The experimental and simulation results show good correlation.
{"title":"Quantitative Evaluation of Carrier Distribution in Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy","authors":"Kotaro Hirose, K. Tanahashi, H. Takato, Yasuo Cho","doi":"10.1109/IPFA.2018.8452172","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452172","url":null,"abstract":"The carrier distribution in solar cell is important evaluation target. Scanning nonlinear dielectric microscopy is applied to the cross section of phosphorus implanted emitter in monocrystalline silicon solar cell and visualizes the carrier distribution quantitatively. The effective diffusivities of phosphorus are estimated from the experimental results. Then, the three-dimensional carrier distribution is simulated. The experimental and simulation results show good correlation.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128410428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452170
Zhongling Qian, C. Brillert
In this paper, the spectral analysis capability combined with the gated imaging technique of dynamic photon emission (GI-PEM) is economically realized. It is introduced as a powerful localization tool by combining a low-cost near-infrared InGaAs image intensifier (I.I.) and a transmission blazed grating. At first, the setup and method for spectral gated imaging of photon emission microscope (SGI-PEM) are presented. On one hand, with GI-PEM as one of global localization tools, it shows an unique and economical debugging and pinpointing capabilities to dynamic fails in mixed-signal and power devices, such as current/voltage spikes, power-up, ESD and latch-up problems. On the other hand, with its spectral capability it can also get insight into the evolution of the physical mechanism of dynamic photon emission in a short time. With detailed dynamical spectra study of the stress process in mixed-signal and power MOSFETs, the corresponding design physical parameters can be optimized to improve their performance.
{"title":"Spectral Gated Imaging of Dynamic Photon Emission in Mixed-Signal and Power Devices","authors":"Zhongling Qian, C. Brillert","doi":"10.1109/IPFA.2018.8452170","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452170","url":null,"abstract":"In this paper, the spectral analysis capability combined with the gated imaging technique of dynamic photon emission (GI-PEM) is economically realized. It is introduced as a powerful localization tool by combining a low-cost near-infrared InGaAs image intensifier (I.I.) and a transmission blazed grating. At first, the setup and method for spectral gated imaging of photon emission microscope (SGI-PEM) are presented. On one hand, with GI-PEM as one of global localization tools, it shows an unique and economical debugging and pinpointing capabilities to dynamic fails in mixed-signal and power devices, such as current/voltage spikes, power-up, ESD and latch-up problems. On the other hand, with its spectral capability it can also get insight into the evolution of the physical mechanism of dynamic photon emission in a short time. With detailed dynamical spectra study of the stress process in mixed-signal and power MOSFETs, the corresponding design physical parameters can be optimized to improve their performance.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130033269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452533
Anusorn Khuankaew
Electro Optical Frequency Mapping is a well-known dynamic fault isolation techniques which is capable of mapping and extracting information of switching transistors from the active area. However, this paper will present a case study of the capability of EOFM to detect the fault location at non-active area (Metal and Polysilicon line). The paper will describe how EOFM can help to localize the Metal and Polysilicon short. Content in this paper provides a useful information and a methodology to localize a short defect in non-active area which relates with thermo-reflectance effects.
{"title":"Application of EOFM to Localize the Metal and Poly-Si Short","authors":"Anusorn Khuankaew","doi":"10.1109/IPFA.2018.8452533","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452533","url":null,"abstract":"Electro Optical Frequency Mapping is a well-known dynamic fault isolation techniques which is capable of mapping and extracting information of switching transistors from the active area. However, this paper will present a case study of the capability of EOFM to detect the fault location at non-active area (Metal and Polysilicon line). The paper will describe how EOFM can help to localize the Metal and Polysilicon short. Content in this paper provides a useful information and a methodology to localize a short defect in non-active area which relates with thermo-reflectance effects.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130812268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452572
D. Nagalingam, A. Quah, S. Moon, G. Ang, S. L. Ting, H.H. Ma, S. Neo, Z. Mai, J. Lam
Studies on defect induced emission characteristics have significantly enhanced the effectiveness of static fault localization on functional logic failures due to open and short defects. In this paper, using the distinctive differences in the defect-induced emission characteristic between open and short defects, together with layout trace and analysis, a defect prediction approach has been derived. It assisted in the hypothesis of the defect type, narrowing down the defect location within long failure net(s) and even pin-pointing the exact defect location in some cases. Successful case studies on advanced technology node devices were used to describe four different emission signatures of open and short defects and the effective application of aforementioned approach in isolating the defect.
{"title":"Defect Prediction Approach to enhance Static Fault Localization of Functional Logic Failure Defects using NIR Photon Emission Microscopy","authors":"D. Nagalingam, A. Quah, S. Moon, G. Ang, S. L. Ting, H.H. Ma, S. Neo, Z. Mai, J. Lam","doi":"10.1109/IPFA.2018.8452572","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452572","url":null,"abstract":"Studies on defect induced emission characteristics have significantly enhanced the effectiveness of static fault localization on functional logic failures due to open and short defects. In this paper, using the distinctive differences in the defect-induced emission characteristic between open and short defects, together with layout trace and analysis, a defect prediction approach has been derived. It assisted in the hypothesis of the defect type, narrowing down the defect location within long failure net(s) and even pin-pointing the exact defect location in some cases. Successful case studies on advanced technology node devices were used to describe four different emission signatures of open and short defects and the effective application of aforementioned approach in isolating the defect.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130989401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452552
M. Lanza, F. Hui, Yuanyuan Shi, Tingting Han, K. Tang, A. Meng, P. McIntyre, T. Petach, D. Goldhaber-Gordon, C. Hitzman, A. Koh
In reliability studies, thin dielectric films are normally placed between two solid electrodes and a potential difference is applied, which produces local physical changes in the dielectric. However, studying such features is very complex due to the need of etching one of the solid electrodes. Here we show that liquid electrolytes can be used to study the reliability of thin dielectrics. Their main advantage is that after the electrical stress, the liquid can be rinsed, exposing the surface for direct characterization.
{"title":"Using Liquid Electrolytes in Dielectric Reliability Studies","authors":"M. Lanza, F. Hui, Yuanyuan Shi, Tingting Han, K. Tang, A. Meng, P. McIntyre, T. Petach, D. Goldhaber-Gordon, C. Hitzman, A. Koh","doi":"10.1109/IPFA.2018.8452552","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452552","url":null,"abstract":"In reliability studies, thin dielectric films are normally placed between two solid electrodes and a potential difference is applied, which produces local physical changes in the dielectric. However, studying such features is very complex due to the need of etching one of the solid electrodes. Here we show that liquid electrolytes can be used to study the reliability of thin dielectrics. Their main advantage is that after the electrical stress, the liquid can be rinsed, exposing the surface for direct characterization.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126825586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452604
S. Chef, C. T. Chua, J. Tay, Y. W. Siah, S. Bhasin, J. Breier, C. Gan
Understanding the organization of memory is a mandatory first step in various fields of applications such as failure analysis, defect localization, qualification and testing of space electronics, and security evaluation. For the last category, localization of specific addresses may be used for content estimation or encryption key recovery, with several techniques being reported for this task. In this paper, we discuss the application of laser probing for descrambling memory embedded in 8 bits microcontrollers designed and manufactured by different companies in various technology nodes.
{"title":"Descrambling of Embedded SRAM Using a Laser Probe","authors":"S. Chef, C. T. Chua, J. Tay, Y. W. Siah, S. Bhasin, J. Breier, C. Gan","doi":"10.1109/IPFA.2018.8452604","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452604","url":null,"abstract":"Understanding the organization of memory is a mandatory first step in various fields of applications such as failure analysis, defect localization, qualification and testing of space electronics, and security evaluation. For the last category, localization of specific addresses may be used for content estimation or encryption key recovery, with several techniques being reported for this task. In this paper, we discuss the application of laser probing for descrambling memory embedded in 8 bits microcontrollers designed and manufactured by different companies in various technology nodes.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116616642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452545
Ashley Tilson, M. Strauss
Process monitoring of 3D NAND flash memory devices requires critical dimension analysis at multiple heights in the memory cell channel. In the punch and plug process the etching step of the cell channel is vulnerable to deformities especially as the aspect ratio of the channel increases. Automated STEM metrology is used as a fast and accurate method of analysis to determine the channel area, circularity, and position. EDS metrology provides the dielectric layer widths of the cell, compensating for the low contrast of these layers in standard STEM imaging. Automation of the STEM image acquisition, EDS, and metrology enabled large data sets to be acquired for analysis. The results of the analysis reveal how the channel shrinks and morphs as the depth of the channel increases.
3D NAND闪存器件的过程监控需要在存储单元通道的多个高度进行关键尺寸分析。在冲塞工艺中，细胞通道的蚀刻步骤容易发生变形，特别是随着通道长宽比的增加。自动化STEM计量是一种快速准确的分析方法，用于确定通道面积、圆度和位置。EDS测量提供了电池的介电层宽度，补偿了标准STEM成像中这些层的低对比度。STEM图像采集、EDS和计量的自动化使得可以获取大量数据集进行分析。分析结果揭示了沟道是如何随着沟道深度的增加而收缩和变形的。
{"title":"STEM/EDS Metrology and Statistical Analysis of 3D NAND Devices","authors":"Ashley Tilson, M. Strauss","doi":"10.1109/IPFA.2018.8452545","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452545","url":null,"abstract":"Process monitoring of 3D NAND flash memory devices requires critical dimension analysis at multiple heights in the memory cell channel. In the punch and plug process the etching step of the cell channel is vulnerable to deformities especially as the aspect ratio of the channel increases. Automated STEM metrology is used as a fast and accurate method of analysis to determine the channel area, circularity, and position. EDS metrology provides the dielectric layer widths of the cell, compensating for the low contrast of these layers in standard STEM imaging. Automation of the STEM image acquisition, EDS, and metrology enabled large data sets to be acquired for analysis. The results of the analysis reveal how the channel shrinks and morphs as the depth of the channel increases.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121687631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452562
Liew Chiun Ning, L. K. Heng, Ng Yi Jie, Goh Lay Lay, Lee Chong Haw, Loo Huey Wen
Ongoing miniaturization in process node technology used in fabricating integrated circuits (ICs) has enhanced chip performance but at the same time this has induced subtle defects. As a result, Failure Analysis (FA) has become increasingly important for root cause analysis to enable wafer fab process improvement. This paper presents a novel FA approach on real case Scan Chain functional failure induced in fabrication process by incorporating Focused Ion Beam (FIB) circuit edit, Infrared Emission Microscopy (IREM), extensive layout study, Nanoprobing, Electron Beam Absorbed Current (EBAC), Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray (EDX) for defect localization.
{"title":"FBGA 28nm Scan Chain Failure Analysis","authors":"Liew Chiun Ning, L. K. Heng, Ng Yi Jie, Goh Lay Lay, Lee Chong Haw, Loo Huey Wen","doi":"10.1109/IPFA.2018.8452562","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452562","url":null,"abstract":"Ongoing miniaturization in process node technology used in fabricating integrated circuits (ICs) has enhanced chip performance but at the same time this has induced subtle defects. As a result, Failure Analysis (FA) has become increasingly important for root cause analysis to enable wafer fab process improvement. This paper presents a novel FA approach on real case Scan Chain functional failure induced in fabrication process by incorporating Focused Ion Beam (FIB) circuit edit, Infrared Emission Microscopy (IREM), extensive layout study, Nanoprobing, Electron Beam Absorbed Current (EBAC), Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray (EDX) for defect localization.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132905068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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