Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452584
Ssu-Yu Wu, Yi-Chen Lin, Sheng-Min Chen, Shi Yang
AA (Active Area) is a very critical layer, it is related to the MOSFET devices operation. If the structure of the AA suffered damage, it will cause the device to operate abnormally. Generally speaking, AA damage issue is always a discussed phenomenon, but few people really explored the root cause in detail [1]. Because the root cause was unknown, we were unable to perform an effective improvement on the abnormality. In this paper, we provide two identified causes for AA damage. One is abnormal CoSi2, the other is metal lines circuit short. We successfully used multi-analyses methods to identify root cause and to improve yield in mass production. Relative physical mechanisms and physical analyses are described in this paper.
{"title":"Failure Modes Study of Active Area Damage with Two Identified Causes using Multi-Analysis Methods","authors":"Ssu-Yu Wu, Yi-Chen Lin, Sheng-Min Chen, Shi Yang","doi":"10.1109/IPFA.2018.8452584","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452584","url":null,"abstract":"AA (Active Area) is a very critical layer, it is related to the MOSFET devices operation. If the structure of the AA suffered damage, it will cause the device to operate abnormally. Generally speaking, AA damage issue is always a discussed phenomenon, but few people really explored the root cause in detail [1]. Because the root cause was unknown, we were unable to perform an effective improvement on the abnormality. In this paper, we provide two identified causes for AA damage. One is abnormal CoSi2, the other is metal lines circuit short. We successfully used multi-analyses methods to identify root cause and to improve yield in mass production. Relative physical mechanisms and physical analyses are described in this paper.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121739232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452540
Xintong Zhu, Xiaoxuan Li, R. R. Nistala, Ju Dy Lim, C. Seet, Z. Mo
In this study, Tantalum Nitride (TaN) film deposited with different N2 gas flow is experimented to characterize the gas flow's impact on the property of the film. X-Ray Reflectivity (XRR) measurement is performed to check film thickness and density differences. X-Ray diffraction (XRD) is used to both observe the changes in crystal orientation of TaN crystallites and to quantify grain size. Clear trends are observed for film thickness, density, crystal orientation and grain size as N2 gas flow increases from 3% to 42%.
{"title":"Property Characterization of Tantalum Nitride Film Deposited with Different N2 Flow by X-Ray Diffraction and X-Ray Reflectivity","authors":"Xintong Zhu, Xiaoxuan Li, R. R. Nistala, Ju Dy Lim, C. Seet, Z. Mo","doi":"10.1109/IPFA.2018.8452540","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452540","url":null,"abstract":"In this study, Tantalum Nitride (TaN) film deposited with different N2 gas flow is experimented to characterize the gas flow's impact on the property of the film. X-Ray Reflectivity (XRR) measurement is performed to check film thickness and density differences. X-Ray diffraction (XRD) is used to both observe the changes in crystal orientation of TaN crystallites and to quantify grain size. Clear trends are observed for film thickness, density, crystal orientation and grain size as N2 gas flow increases from 3% to 42%.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125055878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452485
Binghai Liu, Younan Hua, Z. Dong, P. K. Tan, Yuzhe Zhao, Zhiqiang Mo, J. Lam, Z. Mai
The paper briefly overviewed electron-beam radiation damage and its impacts on physical failure analysis by SEM, FIB and TEM. Based on our electron radiation study on some typical electron-beam sensitive materials, we discussed some interesting results associated with electron radiation damage to Lk/ULK, silicon nitride and CoFeB thin film materials in semiconductor and MRAM devices. The details included radiation induced microstructure changes., material diffusion and phase transformation. The underlying mechanism was also briefly discussed for electron radiation damage to different materials.
{"title":"The Overview of the Impacts of Electron Radiation on Semiconductor Failure Analysis by SEM, FIB and TEM","authors":"Binghai Liu, Younan Hua, Z. Dong, P. K. Tan, Yuzhe Zhao, Zhiqiang Mo, J. Lam, Z. Mai","doi":"10.1109/IPFA.2018.8452485","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452485","url":null,"abstract":"The paper briefly overviewed electron-beam radiation damage and its impacts on physical failure analysis by SEM, FIB and TEM. Based on our electron radiation study on some typical electron-beam sensitive materials, we discussed some interesting results associated with electron radiation damage to Lk/ULK, silicon nitride and CoFeB thin film materials in semiconductor and MRAM devices. The details included radiation induced microstructure changes., material diffusion and phase transformation. The underlying mechanism was also briefly discussed for electron radiation damage to different materials.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129092751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452524
Jon Ren, Gaojie Wen, Bird Fan, Winter Wang, Xiaocui Li
With the integration increasing of IC chip, the function is also getting more and more complicated. A single IC chip can have many functions. Different functions of the output require different output pins, the number of output pins increases from a few to hundreds. For a single IC chip, if an internal block is abnormal, it may affect many output pins. Most of the time, it is hard to find the relationship between these pins. In this paper, forcing method would be applied to identify the major failure pin from many abnormal pins quickly. This method can reduce a lot of microprobe analysis work, reduce the failure analysis time and increase the success rate of IC chip failure analysis.
{"title":"Study on Multiple-pins Function Failure Isolation Method","authors":"Jon Ren, Gaojie Wen, Bird Fan, Winter Wang, Xiaocui Li","doi":"10.1109/IPFA.2018.8452524","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452524","url":null,"abstract":"With the integration increasing of IC chip, the function is also getting more and more complicated. A single IC chip can have many functions. Different functions of the output require different output pins, the number of output pins increases from a few to hundreds. For a single IC chip, if an internal block is abnormal, it may affect many output pins. Most of the time, it is hard to find the relationship between these pins. In this paper, forcing method would be applied to identify the major failure pin from many abnormal pins quickly. This method can reduce a lot of microprobe analysis work, reduce the failure analysis time and increase the success rate of IC chip failure analysis.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128023694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452171
R. Rodriguez-Davila, I. Mejia, M. Quevedo-López, C. Young
Hot carrier stress, where the gate and drain voltages were stressed simultaneously, was executed on ZnO thin-film transistors (TFTs) with different PLD ZnO or ALD Al2O3 deposition parameters. The threshold voltage and transconductance were monitored where 30 mTorr samples had greater threshold voltage shifts and transconductance $(mathrm{g}_{mathrm{m}})$ degradation compared to the 20 mTorr ZnO film. For samples with and without a 400°C forming gas anneal, greater degradation was seen in the annealed sample, which indicates 400°C may be too aggressive. The correlation between $mathrm{g}_{mathrm{m}}$ degradation (i.e., interface degradation) and $Delta mathrm{V}_{mathrm{t}}$ demonstrate that there is influence to the Vt shift from electrically active defects generated in the interfacial region.
{"title":"Hot Carrier Stress Investigation of Zinc Oxide Thin Film Transistors with an Al2O3 Gate Dielectric","authors":"R. Rodriguez-Davila, I. Mejia, M. Quevedo-López, C. Young","doi":"10.1109/IPFA.2018.8452171","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452171","url":null,"abstract":"Hot carrier stress, where the gate and drain voltages were stressed simultaneously, was executed on ZnO thin-film transistors (TFTs) with different PLD ZnO or ALD Al2O3 deposition parameters. The threshold voltage and transconductance were monitored where 30 mTorr samples had greater threshold voltage shifts and transconductance $(mathrm{g}_{mathrm{m}})$ degradation compared to the 20 mTorr ZnO film. For samples with and without a 400°C forming gas anneal, greater degradation was seen in the annealed sample, which indicates 400°C may be too aggressive. The correlation between $mathrm{g}_{mathrm{m}}$ degradation (i.e., interface degradation) and $Delta mathrm{V}_{mathrm{t}}$ demonstrate that there is influence to the Vt shift from electrically active defects generated in the interfacial region.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121531637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452547
M. Ren, Mengqi Yang, Shengrong Zhong, Chi Xie, Zehong Li, Wei Gao, Jin-ping Zhang, Bo Zhang
The characteristics of body diode are significant to the reliability of Superjunction power MOSFET (SJ-MOSFET). In the experiments of body diode reverse recovery of SJ - M OSFE T, it is found that there are two kinds of failure mechanisms: overvoltage caused by the snappy reverse recovery and overcurrent caused by the large peak reverse current. Simulations show that the characteristics of body diode can be improved by optimizing the doping concentrations, carrier lifetimes and charge balance of the P/N pillars in the SJ-MOSFET.
{"title":"Failure Analysis and Improvement of the Body Diode in Superjunction Power MOSFET","authors":"M. Ren, Mengqi Yang, Shengrong Zhong, Chi Xie, Zehong Li, Wei Gao, Jin-ping Zhang, Bo Zhang","doi":"10.1109/IPFA.2018.8452547","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452547","url":null,"abstract":"The characteristics of body diode are significant to the reliability of Superjunction power MOSFET (SJ-MOSFET). In the experiments of body diode reverse recovery of SJ - M OSFE T, it is found that there are two kinds of failure mechanisms: overvoltage caused by the snappy reverse recovery and overcurrent caused by the large peak reverse current. Simulations show that the characteristics of body diode can be improved by optimizing the doping concentrations, carrier lifetimes and charge balance of the P/N pillars in the SJ-MOSFET.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122585473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452601
Wangyong Chen, Linlin Cai, Kunliang Wang, Xing Zhang, Xiaoyan Liu, G. Du
In this paper a new methodology is proposed to investigate variability and reliability correlated with self-heating effect (SHE) in digital circuits during random operation. In this methodology, the arbitrary power waveform (APW) self-heating model is applied to carry out self-heating evaluation with the input sequences generated by the power waveform generator (PWG). Based on the proposed method, self-heating induced variability and HCI degradation in Nanosheet-FETs based SRAM are investigated. The results show it is essential to take the self-heating variation into account for circuit design and reliability prediction.
{"title":"Self-heating induced Variability and Reliability in Nanosheet-FETs Based SRAM","authors":"Wangyong Chen, Linlin Cai, Kunliang Wang, Xing Zhang, Xiaoyan Liu, G. Du","doi":"10.1109/IPFA.2018.8452601","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452601","url":null,"abstract":"In this paper a new methodology is proposed to investigate variability and reliability correlated with self-heating effect (SHE) in digital circuits during random operation. In this methodology, the arbitrary power waveform (APW) self-heating model is applied to carry out self-heating evaluation with the input sequences generated by the power waveform generator (PWG). Based on the proposed method, self-heating induced variability and HCI degradation in Nanosheet-FETs based SRAM are investigated. The results show it is essential to take the self-heating variation into account for circuit design and reliability prediction.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122604172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452180
Gan Chye Siong Kenny, H. Beermann, S. Merzsch
This paper describes the strategy and methods deployed to overcome complexities at various analysis steps systematically in analyzing analog or mix-signal circuits within power ICs. Methods and strategies include: 1.) Building up of universal application board as plug and play setup to verify the failure mode hence reducing setup time. 2.) Global plasma etching with end point detector to expose metal stacks which was implemented instead of FIB pad preparation prior to internal node measurement. 3.) Device characterization of suspicious transistors was measured on IC circuit while the IC is running in application mode. This method does not require physical circuit isolation. 4.) CAD simulation utilized as a tool for fault injection to confirm possible failure location. 5.) FIB as a local de-passivation technique to expose failing site or to perform further necessary fault isolation without altering the electrical failure.
{"title":"Analysis Methods and Strategies of Analog and Mix Signal Circuits in Power IC","authors":"Gan Chye Siong Kenny, H. Beermann, S. Merzsch","doi":"10.1109/IPFA.2018.8452180","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452180","url":null,"abstract":"This paper describes the strategy and methods deployed to overcome complexities at various analysis steps systematically in analyzing analog or mix-signal circuits within power ICs. Methods and strategies include: 1.) Building up of universal application board as plug and play setup to verify the failure mode hence reducing setup time. 2.) Global plasma etching with end point detector to expose metal stacks which was implemented instead of FIB pad preparation prior to internal node measurement. 3.) Device characterization of suspicious transistors was measured on IC circuit while the IC is running in application mode. This method does not require physical circuit isolation. 4.) CAD simulation utilized as a tool for fault injection to confirm possible failure location. 5.) FIB as a local de-passivation technique to expose failing site or to perform further necessary fault isolation without altering the electrical failure.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117351083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452542
Li Huakang, Zhang Yong, Yang Peng, Jin Mingjiang, Liu Guanjun
Aiming at intermittent fault detection problem that caused by solder joint under vibration stress, induced mechanism of solder joint intermittent fault is analysed and the detection method of solder joint intermittent fault number is studied. Firstly, theoretical analysis of the solder joint intermittent connection fault under vibration stress is conducted. Relationships between vibration stress parameters and intermittent faults are described. Dynamic characteristics of the solder joint are interaction between contact interface and vibration stress. However, within a finite time, dynamic parameter amplitude does not depend on the contact interface morphology, and the contact resistance is proportional to the acceleration, displacement and frequency. Next, the detection of solder joint intermittent connection fault is studied. Stimulus signal is selected and a detection algorithm is proposed. A continuous monitoring circuit detects the intermittent fault and DSP processor calculates the number of intermittent faults. Finally, a case study is conducted and a circuit board is used to test the intermittent fault detection method. Voltage change is detected by oscilloscope and the described method simultaneously. Test result shows the number of intermittent faults can be recorded correctly.
{"title":"Mechanism of Solder Joint Intermittent Faults and Its Detection","authors":"Li Huakang, Zhang Yong, Yang Peng, Jin Mingjiang, Liu Guanjun","doi":"10.1109/IPFA.2018.8452542","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452542","url":null,"abstract":"Aiming at intermittent fault detection problem that caused by solder joint under vibration stress, induced mechanism of solder joint intermittent fault is analysed and the detection method of solder joint intermittent fault number is studied. Firstly, theoretical analysis of the solder joint intermittent connection fault under vibration stress is conducted. Relationships between vibration stress parameters and intermittent faults are described. Dynamic characteristics of the solder joint are interaction between contact interface and vibration stress. However, within a finite time, dynamic parameter amplitude does not depend on the contact interface morphology, and the contact resistance is proportional to the acceleration, displacement and frequency. Next, the detection of solder joint intermittent connection fault is studied. Stimulus signal is selected and a detection algorithm is proposed. A continuous monitoring circuit detects the intermittent fault and DSP processor calculates the number of intermittent faults. Finally, a case study is conducted and a circuit board is used to test the intermittent fault detection method. Voltage change is detected by oscilloscope and the described method simultaneously. Test result shows the number of intermittent faults can be recorded correctly.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115269614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452579
H. Teo, Yun Wang, Z. Mo
Measurement of the nitrogen in ultrathin gate oxide is important for the precise control of gate oxide quality in the FEOL manufacturing process. TOF-SIMS is one of the most capable analysis tools for the nitrogen distribution in the bulk of gate oxide and substrate interface, nitrogen concentration as well as dose measurement. However, there are many cluster ions formed during primary ion bombardment and subsequently captured in the mass spectrometry. Some discrepancy during data analysis was possibly observed for certain cluster ions. In this paper, the ion cluster for the characterization of nitrogen in the gate oxide will be discussed and demonstrated in one of the actual applications in manufacturing control process.
{"title":"Study of the Cluster Ion for Gate Oxide Nitrogen Measurement by TOF-SIMS","authors":"H. Teo, Yun Wang, Z. Mo","doi":"10.1109/IPFA.2018.8452579","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452579","url":null,"abstract":"Measurement of the nitrogen in ultrathin gate oxide is important for the precise control of gate oxide quality in the FEOL manufacturing process. TOF-SIMS is one of the most capable analysis tools for the nitrogen distribution in the bulk of gate oxide and substrate interface, nitrogen concentration as well as dose measurement. However, there are many cluster ions formed during primary ion bombardment and subsequently captured in the mass spectrometry. Some discrepancy during data analysis was possibly observed for certain cluster ions. In this paper, the ion cluster for the characterization of nitrogen in the gate oxide will be discussed and demonstrated in one of the actual applications in manufacturing control process.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132033454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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