Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452599
Huang Chia-Sheng, R. Ogino
In this paper, we explored the 2Xnm NAND Flash relationship between HTDR (High temperature data retention) and Pre-cycling conditions in detail. The Pre-cycling interval time effect, no matter in 4Xnm or 2Xnm NAND Flash is play different roles. Finally, based on experimental data we also explored related analyses and discussions of the physical mechanisms.
{"title":"New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect","authors":"Huang Chia-Sheng, R. Ogino","doi":"10.1109/IPFA.2018.8452599","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452599","url":null,"abstract":"In this paper, we explored the 2Xnm NAND Flash relationship between HTDR (High temperature data retention) and Pre-cycling conditions in detail. The Pre-cycling interval time effect, no matter in 4Xnm or 2Xnm NAND Flash is play different roles. Finally, based on experimental data we also explored related analyses and discussions of the physical mechanisms.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114488726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452181
Chen Yan, Niu Zilu, E. Abella, H. Younan, Li Xiaomin
Polycrystalline semiconductor or metal materials are characterized with numerous grain boundaries between neighboring grains. The grain boundaries show a high degree of mismatch of grain orientation and a less efficient atomic packing. Aggressive ions can diffuse much more easily within grain boundaries; rendering the zone susceptible to oxidation and corrosion, which are one of the root causes for electronic device failures. Therefore, revealing the compositional distribution of grain boundaries can help researchers better understand and improve the chemical, physical and electrical properties of materials. This paper mainly focuses on material characterization of the corroded material, providing useful methods for physical failure analysis in real devices which will be discussed in our future work. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is one of the most sensitive techniques for materials analysis. One of its powerful capabilities is to provide 3D images of testing material, demonstrating elemental distribution and microstructure of polycrystalline materials. In this work, common polycrystalline materials used in semiconductors (polysilicon) and metal alloys (304 steel) were studied. TOF-SIMS 3D imaging was used to monitor the diffusion path of moisture and corrosive ions via the grain boundaries. The results indicate that the grain boundaries are vulnerable to attacks of moisture and corrosive ions (CI),
{"title":"A TOF-SIMS Investigation of the Corrosion-Induced Failure Via Grain Boundaries in Polycrystalline Materials","authors":"Chen Yan, Niu Zilu, E. Abella, H. Younan, Li Xiaomin","doi":"10.1109/IPFA.2018.8452181","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452181","url":null,"abstract":"Polycrystalline semiconductor or metal materials are characterized with numerous grain boundaries between neighboring grains. The grain boundaries show a high degree of mismatch of grain orientation and a less efficient atomic packing. Aggressive ions can diffuse much more easily within grain boundaries; rendering the zone susceptible to oxidation and corrosion, which are one of the root causes for electronic device failures. Therefore, revealing the compositional distribution of grain boundaries can help researchers better understand and improve the chemical, physical and electrical properties of materials. This paper mainly focuses on material characterization of the corroded material, providing useful methods for physical failure analysis in real devices which will be discussed in our future work. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is one of the most sensitive techniques for materials analysis. One of its powerful capabilities is to provide 3D images of testing material, demonstrating elemental distribution and microstructure of polycrystalline materials. In this work, common polycrystalline materials used in semiconductors (polysilicon) and metal alloys (304 steel) were studied. TOF-SIMS 3D imaging was used to monitor the diffusion path of moisture and corrosive ions via the grain boundaries. The results indicate that the grain boundaries are vulnerable to attacks of moisture and corrosive ions (CI),","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116197876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452535
Qian Chen, L. Xie, R. Chockalingam, C. Eng, Ushasree Katakamsetty, Pinghui Li, Li Chen, Xiaochong Guan, S. Y. Tan, Juan Boon Tan
Ahstract- Multi-level Metal-Oxide-Metal Capacitors (MOM) is widely utilized in CMOS process. It is an inter-digitated three dimensional multi-level finger capacitor structure formed in dual damascene copper metal layers in the Back-end-of-Line (BEOL) process. Key factors impacting the Time-dependent dielectric breakdown (TDDB) performance of MOM are identified, and results are discussed in this paper. Voltage Ramp (VRamp) analysis is used as the response of the performance of TDDB as it is well known that they are correlated to electric field acceleration parameter of the SQRT E model.
{"title":"A Study of Pattern Density and Process Variations Impact on the Reliability Performance of Multi-Level Capacitance Structure in Low-k Copper Interconnects","authors":"Qian Chen, L. Xie, R. Chockalingam, C. Eng, Ushasree Katakamsetty, Pinghui Li, Li Chen, Xiaochong Guan, S. Y. Tan, Juan Boon Tan","doi":"10.1109/IPFA.2018.8452535","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452535","url":null,"abstract":"Ahstract- Multi-level Metal-Oxide-Metal Capacitors (MOM) is widely utilized in CMOS process. It is an inter-digitated three dimensional multi-level finger capacitor structure formed in dual damascene copper metal layers in the Back-end-of-Line (BEOL) process. Key factors impacting the Time-dependent dielectric breakdown (TDDB) performance of MOM are identified, and results are discussed in this paper. Voltage Ramp (VRamp) analysis is used as the response of the performance of TDDB as it is well known that they are correlated to electric field acceleration parameter of the SQRT E model.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116303690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452591
Carlo M. Casabuena, E. J. de La Cruz
Failure analysis is a very important discipline in many branches of industry, including semiconductor manufacturing, where it is used in design debug of new products or in yield improvement of existing products. Photon emission microscopy is a widely used fault localization technique in failure analysis, such as on a functional failure device, where the failure mode can only be replicated from bench testing. However, fault localization by emission microscopy does not always detect an emission site at the defect location. In many cases, induced emission spots are observed. Thus, further failure isolation through in-depth correlation of bench test evaluation results, circuit analysis and micro-probing is needed. This paper presents a case study demonstrating the use of these techniques.
{"title":"Resolving Failures with Invalid Emission Site Through Bench Tests Results Evaluation with in-depth Circuit Analysis and Micro-probing","authors":"Carlo M. Casabuena, E. J. de La Cruz","doi":"10.1109/IPFA.2018.8452591","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452591","url":null,"abstract":"Failure analysis is a very important discipline in many branches of industry, including semiconductor manufacturing, where it is used in design debug of new products or in yield improvement of existing products. Photon emission microscopy is a widely used fault localization technique in failure analysis, such as on a functional failure device, where the failure mode can only be replicated from bench testing. However, fault localization by emission microscopy does not always detect an emission site at the defect location. In many cases, induced emission spots are observed. Thus, further failure isolation through in-depth correlation of bench test evaluation results, circuit analysis and micro-probing is needed. This paper presents a case study demonstrating the use of these techniques.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125298629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452490
I. Vogt, A. Glowacki, U. Kerst, P. Perdu, T. Nakamura, C. Boit
We present a new experimental method for enhancing quality and accuracy of photon emission measurements (PEM). The technique consists of taking emission images of the device rotated through several different angles. The independent information from several images is then used to numerically calculate an emission pattern, which is superior to just one single PE image. Therefore, the method also allows for spectral photon emission analysis (SPEM) in cases, where emission overlap of neighboring devices prevented SPEM analysis up to this date. This publication gives an overview of the theoretical, experimental and numerical basics of the new method. To give a proof-of-concept we apply the method to a sample case of spectral photon emission and electron temperature analysis of a ring oscillator built in 120nm technology. The obtained results are then compared to data acquired by a conventional measurement on a location of the ring oscillator (RO), where conventional analysis was possible.
{"title":"New Method for Enhancing Photon Emission Measurements Similar to 2D-Tomography","authors":"I. Vogt, A. Glowacki, U. Kerst, P. Perdu, T. Nakamura, C. Boit","doi":"10.1109/IPFA.2018.8452490","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452490","url":null,"abstract":"We present a new experimental method for enhancing quality and accuracy of photon emission measurements (PEM). The technique consists of taking emission images of the device rotated through several different angles. The independent information from several images is then used to numerically calculate an emission pattern, which is superior to just one single PE image. Therefore, the method also allows for spectral photon emission analysis (SPEM) in cases, where emission overlap of neighboring devices prevented SPEM analysis up to this date. This publication gives an overview of the theoretical, experimental and numerical basics of the new method. To give a proof-of-concept we apply the method to a sample case of spectral photon emission and electron temperature analysis of a ring oscillator built in 120nm technology. The obtained results are then compared to data acquired by a conventional measurement on a location of the ring oscillator (RO), where conventional analysis was possible.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"2002 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123762271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452169
W. Oiu, Bernice Zee, B. Lai, J. Vickers, D. Tien
This paper describes a 2X improvement in phase data acquisition for Lock-in Thermography (LIT). Phase data is used to generate phase shift versus applied lock-in frequency plots to estimate defect depth in semiconductor packages. Typically, samples need to be tested for an extended time to ensure data consistency. Furthermore, determining the specific point on the thermal emission site to collect data from can be challenging, especially if it is large and dispersive. To overcome these difficulties, new computational algorithms along with streamlined and automated workflows, such as self-adjusting thermal emission site positioning and phase measurement auto-stop, are employed to validate improvements to data repeatability and accuracy as well as faster time to results on different advanced packaging devices such as flip chips and stack dies. Overall, our results showed a 2X faster time to more accurate and repeatable data for X, Y, and Z depth localization.
{"title":"Improved Phase Data Acquisition for Thermal Emissions Analysis","authors":"W. Oiu, Bernice Zee, B. Lai, J. Vickers, D. Tien","doi":"10.1109/IPFA.2018.8452169","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452169","url":null,"abstract":"This paper describes a 2X improvement in phase data acquisition for Lock-in Thermography (LIT). Phase data is used to generate phase shift versus applied lock-in frequency plots to estimate defect depth in semiconductor packages. Typically, samples need to be tested for an extended time to ensure data consistency. Furthermore, determining the specific point on the thermal emission site to collect data from can be challenging, especially if it is large and dispersive. To overcome these difficulties, new computational algorithms along with streamlined and automated workflows, such as self-adjusting thermal emission site positioning and phase measurement auto-stop, are employed to validate improvements to data repeatability and accuracy as well as faster time to results on different advanced packaging devices such as flip chips and stack dies. Overall, our results showed a 2X faster time to more accurate and repeatable data for X, Y, and Z depth localization.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121816362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452531
Y. Shen, T. Irene, Jie Zhu, Zhiqiang Mo
In this paper, a detailed study of passive voltage contrast on a metal/via/active chain ET structure is performed. Both electron-beam and ion-beam based PVC techniques are tried with different experimental settings. It is found that electron-beam based PVC cannot provide significant contrast at the failure site. The ion-beam based PVC successfully isolates the failure location. Moreover, some interesting PVC contrast changes with different settings are also observed. FIB cross section reveals the failure mechanism. Based on the failure mechanism and theoretical models, the observed PVC contrast can be explained.
{"title":"Passive Voltage Contrast Investigation of Metal/Via Stack Connecting to Substrate","authors":"Y. Shen, T. Irene, Jie Zhu, Zhiqiang Mo","doi":"10.1109/IPFA.2018.8452531","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452531","url":null,"abstract":"In this paper, a detailed study of passive voltage contrast on a metal/via/active chain ET structure is performed. Both electron-beam and ion-beam based PVC techniques are tried with different experimental settings. It is found that electron-beam based PVC cannot provide significant contrast at the failure site. The ion-beam based PVC successfully isolates the failure location. Moreover, some interesting PVC contrast changes with different settings are also observed. FIB cross section reveals the failure mechanism. Based on the failure mechanism and theoretical models, the observed PVC contrast can be explained.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133678829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452526
S. Hommel, N. Killat, T. Schweinboeck, A. Altes, F. Kreupl
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/Si02 interface.
{"title":"Resolving Trap-caused Charges by Scanning Microwave Microscopy","authors":"S. Hommel, N. Killat, T. Schweinboeck, A. Altes, F. Kreupl","doi":"10.1109/IPFA.2018.8452526","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452526","url":null,"abstract":"Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/Si02 interface.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114960778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452506
I. Vagt, C. Boit
Photon emission (PE), for decades the most important technique for Contactless Fault Isolation (CFI) in microelectronics debug and failure analysis, has fallen short of recent IC technologies with respect to optical probing techniques like EOFM/EOP that seemed to be much more sensitive to lower supply voltage operation. This investigation explains why PE can remain a very useful complimentary CFI technique also in low voltage regime if efforts are taken for signal sensitivity on the infrared side of the emission spectrum. The experiments tell that even with InGaAs detectors, supply voltages down to almost 0.5V can be measured. With detectors of a spectral range towards even lower photon energies, PE will be sensitive to much smaller voltages. The gain of device information that PE can deliver, especially if evaluated spectrally, will be available to the advantage of FA and debug of FinFET technologies.
{"title":"Low Power and Fault Isolation: Spectral Aspects of Photon Emission","authors":"I. Vagt, C. Boit","doi":"10.1109/IPFA.2018.8452506","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452506","url":null,"abstract":"Photon emission (PE), for decades the most important technique for Contactless Fault Isolation (CFI) in microelectronics debug and failure analysis, has fallen short of recent IC technologies with respect to optical probing techniques like EOFM/EOP that seemed to be much more sensitive to lower supply voltage operation. This investigation explains why PE can remain a very useful complimentary CFI technique also in low voltage regime if efforts are taken for signal sensitivity on the infrared side of the emission spectrum. The experiments tell that even with InGaAs detectors, supply voltages down to almost 0.5V can be measured. With detectors of a spectral range towards even lower photon energies, PE will be sensitive to much smaller voltages. The gain of device information that PE can deliver, especially if evaluated spectrally, will be available to the advantage of FA and debug of FinFET technologies.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"13 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116428615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/ipfa.2018.8452557
F. Altmann, S. Brand, M. Petzold
3D packing technologies integrate different components in three dimensions in one device to increase performance, functional density and reduce the devices footprint. Due to the increasing complexity and the miniaturization new and specifically 3D-adapted failure analysis methods and corresponding workflows are required to cover technology qualification as well as for process and quality control. This paper will give an overview of available and recently developed failure analysis techniques suitable for 3D packaged devices. In particular, the potential of lock in thermography and high resolution scanning acoustic microscopy for defect localization and new laser and focused ion beam-based techniques for efficient sample preparation will be highlighted. Their application is demonstrated in case studies performed at stacked die devices and Through Silicon Via interconnects.
{"title":"Failure Analysis Techniques for 3D Packages","authors":"F. Altmann, S. Brand, M. Petzold","doi":"10.1109/ipfa.2018.8452557","DOIUrl":"https://doi.org/10.1109/ipfa.2018.8452557","url":null,"abstract":"3D packing technologies integrate different components in three dimensions in one device to increase performance, functional density and reduce the devices footprint. Due to the increasing complexity and the miniaturization new and specifically 3D-adapted failure analysis methods and corresponding workflows are required to cover technology qualification as well as for process and quality control. This paper will give an overview of available and recently developed failure analysis techniques suitable for 3D packaged devices. In particular, the potential of lock in thermography and high resolution scanning acoustic microscopy for defect localization and new laser and focused ion beam-based techniques for efficient sample preparation will be highlighted. Their application is demonstrated in case studies performed at stacked die devices and Through Silicon Via interconnects.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134186434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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