Freestanding oxide thin films, released from the constraints of substrate interfacial bonding, exhibit unprecedented structural and property tunability that surpasses conventional epitaxial films. Through van der Waals integration − particularly via hybridization with 2D materials − these films enable novel electronic devices and offer a compelling approach for advancing complementary metal–oxide–semiconductor (CMOS) technology. However, challenges such as large-scale fabrication, transfer-induced damage, optimization of sacrificial layers, and long-term film stability of freestanding oxide films must be addressed to fully realize their potential. In this review, we summarize recent advances in the preparation of freestanding oxide thin films using physical exfoliation and chemical etching techniques. We specifically examine and compare three major types of sacrificial layers used in chemical etching to obtain freestanding films. Additionally, we explore their properties across seven key areas: Stability, ferroelectricity, magnetism, superconductivity, electrical properties, flexibility, and optical characteristics. Finally, we discuss the current challenges in these emerging fields and offer forward-looking perspectives for future developments. This review aims to provide a comprehensive overview of the state-of-the-art research on freestanding thin films, offering valuable insights into future investigations.
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