Pub Date : 1997-06-10DOI: 10.1109/VLSIT.1997.623693
Hirao, Satake, Kamada, Sekiguchi, Tamaki, Mayumi
A novel Copper (Cu) reflow process, which locates two kinds of barrier layers with different wetting characteristics, is proposed. It enables low temperature reflow in spite of using barrier layers with good wetting characteristics, and realizes higher reliability of Cu interconnects
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Pub Date : 1997-06-10DOI: 10.1109/VLSIT.1997.623678
Kishii, Nakamura, Anmoto
We have developed an MQO~ slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between 1 wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is
{"title":"Dielectric Planarization Using Mn203 Slurry","authors":"Kishii, Nakamura, Anmoto","doi":"10.1109/VLSIT.1997.623678","DOIUrl":"https://doi.org/10.1109/VLSIT.1997.623678","url":null,"abstract":"We have developed an MQO~ slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between 1 wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115108450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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