Pub Date : 1900-01-01DOI: 10.1109/ISSCC.1977.1155640
T. Sakai, Y. Sunohara, H. Nakamura, T. Sudo
AN ULTRA HIGH-SPEED bipolar integrated circuit has been developed with a propagation delay time of less than 100 ps. The process technologies involved are Elevated Electrode IC, an advanced version of SET’. The integrated transistor structure is shown in Figure 1. Arsenic doped polycrystalline silicon is used for the diffusion source as well as the elevated electrodes, emitter and collector, and also interconnection between devices. The polycrystalline silicon is processed to form an overhanging edge. In the subsequent metal evaporation process, the shadowed area under the overhanging edge functions to separate the polycrystalline silicon from the lower level, consequently the evaporated metals are isolated from another by the overhanging edge and the formation of all electrodes and interconnections is completed without the use of fine photolithography and etching processes. After the evaporation of metal on the entire surface of the circuit, the unnecessary portions are etched out by the conventional process, without precise mask alignment. The second metalization step can be made in the conventional way.
{"title":"A 100 PS bipolar logic","authors":"T. Sakai, Y. Sunohara, H. Nakamura, T. Sudo","doi":"10.1109/ISSCC.1977.1155640","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155640","url":null,"abstract":"AN ULTRA HIGH-SPEED bipolar integrated circuit has been developed with a propagation delay time of less than 100 ps. The process technologies involved are Elevated Electrode IC, an advanced version of SET’. The integrated transistor structure is shown in Figure 1. Arsenic doped polycrystalline silicon is used for the diffusion source as well as the elevated electrodes, emitter and collector, and also interconnection between devices. The polycrystalline silicon is processed to form an overhanging edge. In the subsequent metal evaporation process, the shadowed area under the overhanging edge functions to separate the polycrystalline silicon from the lower level, consequently the evaporated metals are isolated from another by the overhanging edge and the formation of all electrodes and interconnections is completed without the use of fine photolithography and etching processes. After the evaporation of metal on the entire surface of the circuit, the unnecessary portions are etched out by the conventional process, without precise mask alignment. The second metalization step can be made in the conventional way.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131567708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ISSCC.1977.1155722
W. Engeler, J. Tiemann, R. Baertsch, H. Goldberg
As all the weighting coefficients of the filter are positive, a weighted charge quantity is collected by a line beneath one of the elementary electrodes of each weighting electrode. A charge reading device is coupled to the line and supplies an electrical signal which is transmitted to the negative input of a differential amplifier, which receives the sampled input voltage of the filter at its positive input. The electrical output signal of the filter is taken, under low impedance, at the output of the differential amplifier, said signal being reinjected at the input of the filter by the injecting means.
{"title":"A charge transfer recursive filter","authors":"W. Engeler, J. Tiemann, R. Baertsch, H. Goldberg","doi":"10.1109/ISSCC.1977.1155722","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155722","url":null,"abstract":"As all the weighting coefficients of the filter are positive, a weighted charge quantity is collected by a line beneath one of the elementary electrodes of each weighting electrode. A charge reading device is coupled to the line and supplies an electrical signal which is transmitted to the negative input of a differential amplifier, which receives the sampled input voltage of the filter at its positive input. The electrical output signal of the filter is taken, under low impedance, at the output of the differential amplifier, said signal being reinjected at the input of the filter by the injecting means.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123731770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ISSCC.1977.1155657
W. Dodson, J. Heightley, V. Alfisi, R. Lodi
{"title":"Bootstrap-pumped control circuitry for an MNOS EAROM","authors":"W. Dodson, J. Heightley, V. Alfisi, R. Lodi","doi":"10.1109/ISSCC.1977.1155657","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155657","url":null,"abstract":"","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126225742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ISSCC.1977.1155652
J. Schroeder, R. Goslin
PROGRAMMABLE read-only memories (PRO%) have been available for several years. Previous fused-link PROMS‘ 3‘ have used bipolar technology with its accompanying high power dissipation. MOS PROMS have used charge storaxe in dualdielectric3 or floating-gate structures. The operating range of these memories is limited by charge loss at elevated temperature^^'^. This paper will describe a fused-link CMOS PROhI which overcomes these earlicr limitations. The basic features are summarized in Table I.
{"title":"A 1024-bit, fused link CMOS PROM","authors":"J. Schroeder, R. Goslin","doi":"10.1109/ISSCC.1977.1155652","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155652","url":null,"abstract":"PROGRAMMABLE read-only memories (PRO%) have been available for several years. Previous fused-link PROMS‘ 3‘ have used bipolar technology with its accompanying high power dissipation. MOS PROMS have used charge storaxe in dualdielectric3 or floating-gate structures. The operating range of these memories is limited by charge loss at elevated temperature^^'^. This paper will describe a fused-link CMOS PROhI which overcomes these earlicr limitations. The basic features are summarized in Table I.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127196240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ISSCC.1977.1155624
A. Brokaw, J. Schoeff
Large scale integration has in the past been dominated by digital circuits, largely because digital systems demand a much narrower range of circuit types and device performance for a given task. The resulting density and case of design and use makes them lower in cost. Many system problems remain, however, which cannot be solved entirely by digital means. The need for low cost, high performance measurement, data conversion, signal processing, communication, and control devices is growing with the pervasiveness of digital systems. The dollar volume of these devices may even exceed that of the digital LSI circuits as the central controllers mature and systems become more I/O intensive.
{"title":"The future of data acquisition and control","authors":"A. Brokaw, J. Schoeff","doi":"10.1109/ISSCC.1977.1155624","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155624","url":null,"abstract":"Large scale integration has in the past been dominated by digital circuits, largely because digital systems demand a much narrower range of circuit types and device performance for a given task. The resulting density and case of design and use makes them lower in cost. Many system problems remain, however, which cannot be solved entirely by digital means. The need for low cost, high performance measurement, data conversion, signal processing, communication, and control devices is growing with the pervasiveness of digital systems. The dollar volume of these devices may even exceed that of the digital LSI circuits as the central controllers mature and systems become more I/O intensive.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115240695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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