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2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)最新文献

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IIR digital filter for delta-sigma decimation, channel selection, and square-root raised-cosine nyquist filtering IIR数字滤波器用于delta-sigma抽取,通道选择和平方根提高余弦奈奎斯特滤波
S. Mirabbasi, K. Martin
A 1.8 V 0.18 /spl mu/m CMOS /spl Delta//spl Sigma/ decimation filter also performs channel-selection and an approximate root-raised-cosine Nyquist pulse-shaping. The 0.1 mm/sup 2/ IIR structure consumes 6.4 mW (26.8 mW) at 64 MHz (240 MHz) oversampling frequency.
一个1.8 V 0.18 /spl mu/m CMOS /spl Delta//spl Sigma/抽取滤波器也执行通道选择和近似的根提升余弦奈奎斯特脉冲整形。0.1 mm/sup 2/ IIR结构在64 MHz (240 MHz)过采样频率下消耗6.4 mW (26.8 mW)功率。
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引用次数: 4
0.25 /spl mu/m CMOS and BiCMOS single-chip direct-conversion Doppler radars for remote sensing of vital signs 0.25 /spl mu/m CMOS和BiCMOS单片机直接转换多普勒雷达,用于生命体征遥感
A. Droitcour, O. Boric-Lubecke, V. Lubecke, Jenshan Lin
A fully integrated direct conversion Doppler radar that detects heart and respiration movement at a distance of 50 cm is described. The 1.6 GHz transceiver is implemented in both CMOS and BiCMOS technologies, with each chip occupying 14 mm/sup 2/ using a 0.25 μm silicon processes. The effects on system sensitivity of phase noise at small offset frequencies with range correlation are assessed.
描述了一种完全集成的直接转换多普勒雷达,可检测距离为50厘米的心脏和呼吸运动。1.6 GHz收发器采用CMOS和BiCMOS两种技术实现,每个芯片占用14 mm/sup /,采用0.25 μm硅工艺。研究了具有距离相关性的小偏置频率下相位噪声对系统灵敏度的影响。
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引用次数: 115
An 800 Mb/s physical layer LSI with hybrid port architecture for consumer electronics networking 一个800 Mb/s的物理层LSI混合端口架构,用于消费电子网络
T. Yoshikawk, T. Yoshida, T. Ebuchi, Y. Arima, T. Iwata, K. Nishimura, H. Kimura, Y. Komatsu, H. Yamauchi
A physical layer LSI has one DS-port and two /spl beta/ports in accordance with IEEE1394-2000 and P1394b Draft 1.01 respectively. The 0.25 /spl mu/m CMOS LSI realizes 800 Mb/s and 1.2 km peer-to-peer IEEE1394 networking through /spl beta/port. Each /spl beta/port requires 180 mW active power and is treated as ASIC macro for future large system integration.
一个物理层LSI有1个DS-port和2个/spl beta/port,分别符合IEEE1394-2000和P1394b Draft 1.01标准。0.25 /spl mu/m的CMOS LSI通过/spl beta/端口实现800mb /s和1.2 km的对等IEEE1394网络。每个/spl beta/端口需要180mw有功功率,并被视为未来大型系统集成的ASIC宏。
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引用次数: 0
An integrated 9-channel time digitizer with 30 ps resolution 集成9通道时间数字化仪,分辨率30ps
A. Mantyniemi, T. Rahkonen, J. Kostamovaara
An integrated 9-channel time digitizer with 30 ps RMS resolution, 496 /spl mu/s range, and 50 mW power consumption in 0.6 /spl mu/m CMOS uses a three-stage delay line interpolation and delay-generation principle that divides the 66 MHz clock period into 512 bins using only 45 delay elements.
集成的9通道时间数字化仪具有30 ps RMS分辨率,496 /spl mu/s范围和50 mW功耗,0.6 /spl mu/m CMOS,采用三级延迟线插值和延迟产生原理,仅使用45个延迟元件将66 MHz时钟周期划分为512个桶。
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引用次数: 60
Design of an 8-wide superscalar RISC microprocessor with simultaneous multithreading 同时多线程的8宽标量RISC微处理器的设计
R. Preston, R. Badeau, D. Bailey, Shane L. Bell, L. Biro, W. Bowhill, D. Dever, S. Felix, R. Gammack, V. Germini, M. Gowan, P. Gronowski, D. B. Jackson, S. Mehta, S. Morton, J. Pickholtz, M. Reilly, M. Smith
A 250M transistor microprocessor implements the Alpha instruction set and features 8-wide superscalar issue and simultaneous multithreading in a 0.125/spl mu/m SOI process. Performance is estimated at over three times that of the previous design.
250M晶体管微处理器实现Alpha指令集,并在0.125/spl mu/m SOI进程中具有8宽超标量问题和同步多线程。性能估计是以前设计的三倍以上。
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引用次数: 97
A 1 V 51GHz fully-integrated VCO in 0.12 /spl mu/m CMOS 1 V 51GHz全集成压控振荡器,0.12 /spl mu/m CMOS
M. Tiebout, H. Wohlmuth, W. Simburger
A fully integrated 51 GHz VCO is implemented in 0.12 /spl mu/m standard CMOS with 6 metal levels. Core power consumption is 1 mW at 1V supply due to the optimized high-inductance tank. The tuning range is 1.4 GHz. Measured phase noise is -85 dBc/Hz at 1 MHz offset.
完全集成的51 GHz压控振荡器采用0.12 /spl mu/m标准CMOS,具有6个金属电平。由于优化的高电感油箱,在1V电源下,核心功耗为1mw。调谐范围为1.4 GHz。测量相位噪声为-85 dBc/Hz,偏移量为1mhz。
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引用次数: 22
A 10 Gb/s and 40 Gb/s forward-error-correction device for optical communications 用于光通信的10gb /s和40gb /s前向纠错装置
Leilei Song, Meng-Lin Yu, M. Shaffer
Two forward error-correcting devices for OC-48/192/768 are implemented in 1.5 V 0.6 /spl mu/m CMOS. A 10 Gb/s (or Quad 2.5 Gb/s) device with 424k-gate Reed-Solomon core consumes 343 mW. A 40 Gb/s device contains 364k-gates and consumes 361 mW.
OC-48/192/768的两个前向纠错器件在1.5 V 0.6 /spl mu/m CMOS中实现。424k栅极Reed-Solomon核心的10gb /s(或Quad 2.5 Gb/s)设备消耗343 mW。一个40gb /s的设备包含364k门,消耗361兆瓦。
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引用次数: 7
A 1.5 V 86 mW/ch 8-channel 622-3125 Mb/s/ch CMOS SerDes macrocell with selectable mux/demux ratio 一个1.5 V 86 mW/ch 8通道622-3125 Mb/s/ch CMOS SerDes macrocell,具有可选的多路/失路比
F. Yang, J. O'Neill, P. Larsson, D. Inglis, J. Othmer
An 8-channel serial link transceiver realizes 20 Gb/s full duplex total I/O throughput with <700 mW dissipation from a 1.5 V supply and occupies 2 mm/sup 2/ in 0.16 /spl mu/m CMOS. An analog DLL allows tracking of frequency offset up to 400 ppm. The receiver, employing an integrate-and-dump front-end, achieves 30 mVpp sensitivity.
8通道串行链路收发器在1.5 V电源下实现20gb /s全双工总I/O吞吐量,功耗< 700mw,在0.16 /spl mu/m CMOS中占用2 mm/sup 2/。模拟DLL允许跟踪频率偏移高达400ppm。接收机采用集成转储前端,灵敏度达到30 mVpp。
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引用次数: 13
A GSM/GPRS mixed-signal baseband IC GSM/GPRS混合信号基带集成电路
D. Redmond, M. Fitzgibbon, A. Bannon, D. Hobbs, Chunhe Zhao, K. Kase, J. Chan, M. Priel, K. Traylor, K. Tilley
A dual-core baseband processor IC for GSM/GPRS cellular phone applications is built in a 0.13 /spl mu/m CMOS process with 5 levels of copper interconnect and contains a high level of mixed-signal integration which includes: 1 GHz CMOS synthesizer, 10 b general-purpose ADC, two 14 b ADCs, power amplifier controller, and 13 b voice codec.
用于GSM/GPRS蜂窝电话应用的双核基带处理器IC采用0.13 /spl mu/m CMOS工艺,5级铜互连,包含高水平的混合信号集成,包括:1 GHz CMOS合成器,10 b通用ADC,两个14 b ADC,功率放大器控制器和13 b语音编解码器。
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引用次数: 10
Digital logic using molecular electronics 使用分子电子学的数字逻辑
S. Goldstein, D. Rosewater
A reconfigurable architecture is based on chemically-assembled electronic nanotechnology (CAEN). A molecular latch based on molecular RTDs provides I/O-isolation, voltage restoration, and fan-out using only 2-terminal devices.
一种基于化学组装电子纳米技术(CAEN)的可重构结构。基于分子rtd的分子锁存器提供I/ o隔离、电压恢复和仅使用2端器件的扇出。
{"title":"Digital logic using molecular electronics","authors":"S. Goldstein, D. Rosewater","doi":"10.1109/ISSCC.2002.993007","DOIUrl":"https://doi.org/10.1109/ISSCC.2002.993007","url":null,"abstract":"A reconfigurable architecture is based on chemically-assembled electronic nanotechnology (CAEN). A molecular latch based on molecular RTDs provides I/O-isolation, voltage restoration, and fan-out using only 2-terminal devices.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122798392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 66
期刊
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)
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