Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626387
A. Pligovka, A. Lazavenka, A. Zakhlebayeva
Two types of niobia columnlike nanostructures were synthesized by anodization, reanodization, and chemical etching of sputter-deposited Al/Nb metal layers. The morphological properties of synthesized niobia columnlike nanostructures were determined by means of scanning electron microscopy. The electro-physical characteristics of niobia columnlike nanostructures were investigated in two measurement schemes. Aluminum layers of thickness 500 nm were used as contact pads. The current-voltage I-U characteristic has a nonlinear and nonsymmetrical character. The rising of temperature leads to an increase of the current. This behavior may indicate a p-n or metal-semiconductor junction. The initial resistance at 23 °C was 60 and 120 kOhms, the specific resistance to the height of the columns was 87 and 116 kOhms·nm−1, the calculated temperature coefficient of resistance appeared to be negative and rather low: $-1.39times 10^{-2}$ and $-1.28times 10^{-2}mathrm{K}^{-1}$ for the niobia columnlike nanostructures reanodized at 300 and 450 V, respectively.
{"title":"Electro-Physical Properties of Niobia Columnlike Nanostructures via the Anodizing of Al/Nb Layers","authors":"A. Pligovka, A. Lazavenka, A. Zakhlebayeva","doi":"10.1109/NANO.2018.8626387","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626387","url":null,"abstract":"Two types of niobia columnlike nanostructures were synthesized by anodization, reanodization, and chemical etching of sputter-deposited Al/Nb metal layers. The morphological properties of synthesized niobia columnlike nanostructures were determined by means of scanning electron microscopy. The electro-physical characteristics of niobia columnlike nanostructures were investigated in two measurement schemes. Aluminum layers of thickness 500 nm were used as contact pads. The current-voltage I-U characteristic has a nonlinear and nonsymmetrical character. The rising of temperature leads to an increase of the current. This behavior may indicate a p-n or metal-semiconductor junction. The initial resistance at 23 °C was 60 and 120 kOhms, the specific resistance to the height of the columns was 87 and 116 kOhms·nm−1, the calculated temperature coefficient of resistance appeared to be negative and rather low: $-1.39times 10^{-2}$ and $-1.28times 10^{-2}mathrm{K}^{-1}$ for the niobia columnlike nanostructures reanodized at 300 and 450 V, respectively.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128696789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626222
Lina Tizani, I. Saadat, Cyril Aubry
Graphene membranes over Si etched cavities are fabricated to form the sensing element for micro gas sensors. The repeatability and stability of the sensor is dependent on stress and stretch of the graphene membrane which is related to the conformal to non-conformal morphology of the graphene. This in turn depends on the surface roughness of the Si surface that anchors the graphene film. In this paper we present the results of the optimization of the cavity formation process to allow for a smooth surface that allows superior adhesion of the graphene without extra stretching or tears.
{"title":"Fabrication and Optimization of Graphene Membrane for Gas Sensor Applications","authors":"Lina Tizani, I. Saadat, Cyril Aubry","doi":"10.1109/NANO.2018.8626222","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626222","url":null,"abstract":"Graphene membranes over Si etched cavities are fabricated to form the sensing element for micro gas sensors. The repeatability and stability of the sensor is dependent on stress and stretch of the graphene membrane which is related to the conformal to non-conformal morphology of the graphene. This in turn depends on the surface roughness of the Si surface that anchors the graphene film. In this paper we present the results of the optimization of the cavity formation process to allow for a smooth surface that allows superior adhesion of the graphene without extra stretching or tears.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126478505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626237
Chuck Paeng, He Zhang, Y. Kim
Ion decoupled plasma technique with low ion energy have been used to demonstrate conformal shallow junctions of phosphorous with higher than l E20 of dopants for germanium (Ge). Adding antimony (Sb) in plasma-assisted doping was found to enhance the phosphorous (P) dopant level dramatically. Various annealing techniques were compared to understand the impact to dopant activation and levels to form shallow junctions with enhanced P level.
{"title":"Sb co-Doping to Enhance Phosphorous Level on Ge Using Ion Decoupled Plasma Process","authors":"Chuck Paeng, He Zhang, Y. Kim","doi":"10.1109/NANO.2018.8626237","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626237","url":null,"abstract":"Ion decoupled plasma technique with low ion energy have been used to demonstrate conformal shallow junctions of phosphorous with higher than l E20 of dopants for germanium (Ge). Adding antimony (Sb) in plasma-assisted doping was found to enhance the phosphorous (P) dopant level dramatically. Various annealing techniques were compared to understand the impact to dopant activation and levels to form shallow junctions with enhanced P level.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126142300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626334
Y. Ajiki, T. Kan
We proposed and verified electronic shutter of a nano-antenna typed infrared photodetector by using Schottky Barrier Height modulation. Optical detection measurement synchronized with the barrier height modulation could be carried out by our proposed method. This method does not require any mechanical shutter so that system can be compact enough to set at the tip of an endoscopy.
{"title":"Schottky Barrier Modulation for Electronic Shutter Operation of Si Based IR Photodetector","authors":"Y. Ajiki, T. Kan","doi":"10.1109/NANO.2018.8626334","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626334","url":null,"abstract":"We proposed and verified electronic shutter of a nano-antenna typed infrared photodetector by using Schottky Barrier Height modulation. Optical detection measurement synchronized with the barrier height modulation could be carried out by our proposed method. This method does not require any mechanical shutter so that system can be compact enough to set at the tip of an endoscopy.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127367472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626348
A. Varpula, A. Shchepetov, K. Grigoras, J. Hassel, M. Prunnila, J. Ahopelto
The highly reduced thermal conductivity arising from confinement of acoustic phonons and enhanced phonon scattering in ultra-thin freestanding silicon membranes enables fabrication of sensitive thermal thermoelectric detectors. The devices show very low noise equivalent power of 13 pW/ Hz 1/2 and relatively fast operation. By optimizing the structure and electrical properties of the detector, the operation can approach the temperature fluctuation limit.
{"title":"Silicon Membranes for Nanophononics","authors":"A. Varpula, A. Shchepetov, K. Grigoras, J. Hassel, M. Prunnila, J. Ahopelto","doi":"10.1109/NANO.2018.8626348","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626348","url":null,"abstract":"The highly reduced thermal conductivity arising from confinement of acoustic phonons and enhanced phonon scattering in ultra-thin freestanding silicon membranes enables fabrication of sensitive thermal thermoelectric detectors. The devices show very low noise equivalent power of 13 pW/ Hz 1/2 and relatively fast operation. By optimizing the structure and electrical properties of the detector, the operation can approach the temperature fluctuation limit.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114177034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8706508
Nitai Debnath, Sumistha Das
Post transcriptional gene silencing through RNA interference (RNAi) technology has opened a new avenue to control insects. Due to several physicochemical properties the repression efficiency of gene expression by double stranded RNA (dsRNA) in insect cells is not very high. Nowadays nanoparticle (NP) mediated delivery of dsRNA is gradually gaining popularity to improve its gene silencing efficiency in insects. NP mediated delivery method will not only increase the stability of dsRNA, but also will facilitate its delivery and endosomal release for efficient gene silencing. Additionally, this delivery method is target specific, so will be safe to other organisms in the ecosystem. This technology has the potential to become a more sustainable and eco-friendly pest control method. The main challenge in widespread use of RNAi technology for controlling insect pests is the development of effective and reliable dsRNA delivery methods. Microinjection is not a viable method for triggering RNAi in insects at bulk scale, specifically if we think of controlling insect pests in agricultural set up. Here, we have developed a feeding assay based method to deliver dsRNA, tagged with nanocarriers, to knock down insect genes. This delivery approache has the potential to increase the retention time of the dsRNAs in the circulatory system by reducing the rate of clearance, protect the dsRNAs from gut nucleases, ensure stability of dsRNA in the lumen of the alimentary canal, facilitate targeting and uptake of the dsRNAs into the target cells and promote trafficking in the cytoplasm and uptake into RNA-induced silencing complex. This technology has the potential to become a more sustainable and eco-friendly pest control method and can also be utilized to control other insect vectors.
{"title":"Nanoparticle mediated RNAi in insects: A novel feeding assay based method for controlling insect pests","authors":"Nitai Debnath, Sumistha Das","doi":"10.1109/NANO.2018.8706508","DOIUrl":"https://doi.org/10.1109/NANO.2018.8706508","url":null,"abstract":"Post transcriptional gene silencing through RNA interference (RNAi) technology has opened a new avenue to control insects. Due to several physicochemical properties the repression efficiency of gene expression by double stranded RNA (dsRNA) in insect cells is not very high. Nowadays nanoparticle (NP) mediated delivery of dsRNA is gradually gaining popularity to improve its gene silencing efficiency in insects. NP mediated delivery method will not only increase the stability of dsRNA, but also will facilitate its delivery and endosomal release for efficient gene silencing. Additionally, this delivery method is target specific, so will be safe to other organisms in the ecosystem. This technology has the potential to become a more sustainable and eco-friendly pest control method. The main challenge in widespread use of RNAi technology for controlling insect pests is the development of effective and reliable dsRNA delivery methods. Microinjection is not a viable method for triggering RNAi in insects at bulk scale, specifically if we think of controlling insect pests in agricultural set up. Here, we have developed a feeding assay based method to deliver dsRNA, tagged with nanocarriers, to knock down insect genes. This delivery approache has the potential to increase the retention time of the dsRNAs in the circulatory system by reducing the rate of clearance, protect the dsRNAs from gut nucleases, ensure stability of dsRNA in the lumen of the alimentary canal, facilitate targeting and uptake of the dsRNAs into the target cells and promote trafficking in the cytoplasm and uptake into RNA-induced silencing complex. This technology has the potential to become a more sustainable and eco-friendly pest control method and can also be utilized to control other insect vectors.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114433143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626377
A. Agrawal, Sarjana Yadav, A. Dhawan
In this paper, we demonstrate that the nature of surface plasmons in nano-structured gold films - with arrays of nanoholes - is significantly affected by variation in the period and the diameter of these nanoholes. These nanohole arrays in gold films can be employed for real-time sensing applications with enhanced sensitivity. In this paper, numerical simulations using rigorous coupled wave analysis (RCWA) are carried out to study the effect of different periods and diameters of the nanoholes on the angulo-spectral reflectance maps. These maps are analyzed in detail to study the dependence of surface plasmon behaviour on the geometrical parameters in these structures, and enhanced sensitivity is demonstrated for localized refractive index sensing.
{"title":"Enhanced sensitivity of SPR biological sensor based on nanohole arrays in gold films","authors":"A. Agrawal, Sarjana Yadav, A. Dhawan","doi":"10.1109/NANO.2018.8626377","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626377","url":null,"abstract":"In this paper, we demonstrate that the nature of surface plasmons in nano-structured gold films - with arrays of nanoholes - is significantly affected by variation in the period and the diameter of these nanoholes. These nanohole arrays in gold films can be employed for real-time sensing applications with enhanced sensitivity. In this paper, numerical simulations using rigorous coupled wave analysis (RCWA) are carried out to study the effect of different periods and diameters of the nanoholes on the angulo-spectral reflectance maps. These maps are analyzed in detail to study the dependence of surface plasmon behaviour on the geometrical parameters in these structures, and enhanced sensitivity is demonstrated for localized refractive index sensing.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121768588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626399
R. Zhu, X. Zong
Nano metal-oxide-semiconductor field-effect transistor (MOSFET) has been widely used in various sensors to achieve high sensitivity due to low-noise property of nano FET. In this paper, we present a novel zinc oxide (ZnO) nanorod FET operated in alternating current mode to implement ultra-sensitive detections. The FET is constructed by cross-connected ZnO nanorods directly grown from opposite ends of drain and source microelectrodes. ZnO nano FET acting as a high-frequency mixer transduces exterior-induced FET conductance change into an alternating current change at a certain difference frequency, which is detected by a lock-in amplifier. The nanorod FET demonstrates ultra-high sensitivity, excellent interference immunity and extremely stable performances.
{"title":"Zinc Oxide Nanorod Field-effect Transistor with Difference Frequency Detection","authors":"R. Zhu, X. Zong","doi":"10.1109/NANO.2018.8626399","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626399","url":null,"abstract":"Nano metal-oxide-semiconductor field-effect transistor (MOSFET) has been widely used in various sensors to achieve high sensitivity due to low-noise property of nano FET. In this paper, we present a novel zinc oxide (ZnO) nanorod FET operated in alternating current mode to implement ultra-sensitive detections. The FET is constructed by cross-connected ZnO nanorods directly grown from opposite ends of drain and source microelectrodes. ZnO nano FET acting as a high-frequency mixer transduces exterior-induced FET conductance change into an alternating current change at a certain difference frequency, which is detected by a lock-in amplifier. The nanorod FET demonstrates ultra-high sensitivity, excellent interference immunity and extremely stable performances.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127368740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626231
K. Kuma, U. Kumawat, A. Dhawan
In this paper, we present organic solar cells (OSCs) containing plasmonic silver nanostructures in the active medium poly[[9-(l-octylnonyl)-9H-carbazole-2,7 -diyl]-2,5-thiophenediyl-2, 1,3-benzothiadiazole-4,7 -diyl-2,5-thiophenediyl] (PCDTBT):[6], [6]-phenyl C71 butyric acid methyl ester (PC71BM). Finite-difference time-domain (FDTD) modeling was employed to simulate the interaction of incident light with plasmonic nanostructures of different shapes, leading to a broadband absorption enhancement in the OSCs. It is demonstrated that this enhancement is primarily due to enhanced far field scattering - localized surface plasmon excitation - from the nanostructures in the active medium. We demonstrate a 25.28% increase in the short circuit current density, $mathrm{J}_{text{SC}}$ for the OSCs containing hexagonal nanodiscs in the active medium.
{"title":"Enhanced Absorption in Organic Solar Cells by employing Plasmonic Nanostructures","authors":"K. Kuma, U. Kumawat, A. Dhawan","doi":"10.1109/NANO.2018.8626231","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626231","url":null,"abstract":"In this paper, we present organic solar cells (OSCs) containing plasmonic silver nanostructures in the active medium poly[[9-(l-octylnonyl)-9H-carbazole-2,7 -diyl]-2,5-thiophenediyl-2, 1,3-benzothiadiazole-4,7 -diyl-2,5-thiophenediyl] (PCDTBT):[6], [6]-phenyl C71 butyric acid methyl ester (PC71BM). Finite-difference time-domain (FDTD) modeling was employed to simulate the interaction of incident light with plasmonic nanostructures of different shapes, leading to a broadband absorption enhancement in the OSCs. It is demonstrated that this enhancement is primarily due to enhanced far field scattering - localized surface plasmon excitation - from the nanostructures in the active medium. We demonstrate a 25.28% increase in the short circuit current density, $mathrm{J}_{text{SC}}$ for the OSCs containing hexagonal nanodiscs in the active medium.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130125490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626274
F. Sacconi, M. A. der Maur, A. Pecchia, A. Di Carlo
In recent years, much interest has been attracted by multiscale approaches in the simulation of electronic devices. In this work, we present an overview of the project TiberCAD, a software tool for design and simulation of electronic and optoelectronic nanostructured devices. Examples of applications will be provided where the combination of continuous models and models with atomistic resolution are beneficial for the correct description of device physical behavior.
{"title":"Multiscale simulation of nanostructured devices","authors":"F. Sacconi, M. A. der Maur, A. Pecchia, A. Di Carlo","doi":"10.1109/NANO.2018.8626274","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626274","url":null,"abstract":"In recent years, much interest has been attracted by multiscale approaches in the simulation of electronic devices. In this work, we present an overview of the project TiberCAD, a software tool for design and simulation of electronic and optoelectronic nanostructured devices. Examples of applications will be provided where the combination of continuous models and models with atomistic resolution are beneficial for the correct description of device physical behavior.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"35 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114059875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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