首页 > 最新文献

EDFA Technical Articles最新文献

英文 中文
Multilayer Perceptron Development to Identify Plastics Using Fluorescence Lifetime Imaging Microscopy 多层感知器的发展,以识别塑料荧光寿命成像显微镜
Pub Date : 2023-08-01 DOI: 10.31399/asm.edfa.2023-3.p031
Georgekutty Jose Maniyattu, Eldho Geegy, M. Wohlschläger, N. Leiter, M. Versen, C. Laforsch
Existing plastic analysis techniques such as Fourier transform infrared spectroscopy and Raman spectroscopy are problematic because samples must be anhydrous and identification can be hindered by additives. This article describes a new approach that has been successfully demonstrated in which plastics can be classified by neural networks that are trained, validated, and tested by frequency domain fluorescence lifetime imaging microscopy measurements.
现有的塑料分析技术,如傅里叶变换红外光谱和拉曼光谱是有问题的,因为样品必须是无水的,鉴定可能会受到添加剂的阻碍。本文描述了一种新的方法,已经成功地证明了塑料可以通过神经网络进行分类,这些神经网络经过训练,验证,并通过频域荧光寿命成像显微镜测量进行测试。
{"title":"Multilayer Perceptron Development to Identify Plastics Using Fluorescence Lifetime Imaging Microscopy","authors":"Georgekutty Jose Maniyattu, Eldho Geegy, M. Wohlschläger, N. Leiter, M. Versen, C. Laforsch","doi":"10.31399/asm.edfa.2023-3.p031","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-3.p031","url":null,"abstract":"\u0000 Existing plastic analysis techniques such as Fourier transform infrared spectroscopy and Raman spectroscopy are problematic because samples must be anhydrous and identification can be hindered by additives. This article describes a new approach that has been successfully demonstrated in which plastics can be classified by neural networks that are trained, validated, and tested by frequency domain fluorescence lifetime imaging microscopy measurements.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115310594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advancements in Image Pattern Recognition for Lock-In Thermography Hotspot Detection and Classification with Supervised Learning 基于监督学习的锁定热成像热点检测与分类图像模式识别研究进展
Pub Date : 2023-08-01 DOI: 10.31399/asm.edfa.2023-3.p004
K. K. Thinn, Teh Tict Eng, Ming Xue, Rui Zhen Tan
Lock-in thermography (LIT) is a widely used nondestructive tool for detecting the failure location in integrated circuits. The image pattern recognition algorithm for detecting LIT hotspots benefits image processing and can be leveraged to automate failure analysis processes.
锁相热像仪(LIT)是一种广泛应用于集成电路故障检测的无损检测工具。用于检测LIT热点的图像模式识别算法有利于图像处理,并可用于自动化故障分析过程。
{"title":"Advancements in Image Pattern Recognition for Lock-In Thermography Hotspot Detection and Classification with Supervised Learning","authors":"K. K. Thinn, Teh Tict Eng, Ming Xue, Rui Zhen Tan","doi":"10.31399/asm.edfa.2023-3.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-3.p004","url":null,"abstract":"\u0000 Lock-in thermography (LIT) is a widely used nondestructive tool for detecting the failure location in integrated circuits. The image pattern recognition algorithm for detecting LIT hotspots benefits image processing and can be leveraged to automate failure analysis processes.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125214061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The EDFAS FA Technology Roadmap Die-Level Post-Isolation Domain Technical Summary EDFAS FA技术路线图模具级隔离后领域技术总结
Pub Date : 2023-08-01 DOI: 10.31399/asm.edfa.2023-3.p054
Chuan Zhang
The Electronic Device Failure Analysis Society established the Die-Level Post-Isolation Domain Council to provide an overview of the upcoming challenges in this area and guide technique developments for next-generation analytical tools. This column summarizes the findings of the council in the areas of sample preparation, microscopy, nanoprobing, circuit editing, and scanning probe microscopy. It is a preview of the full roadmap document, which is in preparation to be released to the EDFAS community.
电子设备故障分析协会成立了模具级隔离后领域委员会,以概述该领域即将面临的挑战,并指导下一代分析工具的技术发展。本专栏总结了该委员会在样品制备、显微镜、纳米探针、电路编辑和扫描探针显微镜等领域的发现。这是完整路线图文档的预览版,正准备发布到EDFAS社区。
{"title":"The EDFAS FA Technology Roadmap Die-Level Post-Isolation Domain Technical Summary","authors":"Chuan Zhang","doi":"10.31399/asm.edfa.2023-3.p054","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-3.p054","url":null,"abstract":"\u0000 The Electronic Device Failure Analysis Society established the Die-Level Post-Isolation Domain Council to provide an overview of the upcoming challenges in this area and guide technique developments for next-generation analytical tools. This column summarizes the findings of the council in the areas of sample preparation, microscopy, nanoprobing, circuit editing, and scanning probe microscopy. It is a preview of the full roadmap document, which is in preparation to be released to the EDFAS community.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133107040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Four-Dimensional Scanning Transmission Electron Microscopy: Part I: Imaging, Strain Mapping, and Defect Detection 四维扫描透射电子显微镜:第一部分:成像,应变映射和缺陷检测
Pub Date : 2023-08-01 DOI: 10.31399/asm.edfa.2023-3.p012
A. Johnston-Peck, A. Herzing
Four-dimensional scanning transmission electron microscopy (4D-STEM) is a spatially resolved electron diffraction technique that records the electron scattering distribution at each sampling point. 4D-STEM provides researchers with information that can be analyzed in a multitude of ways to characterize a sample’s structure, including imaging, strain measurement, and defect analysis. This article introduces the basics of the technique and some areas of application with an emphasis on semiconductor materials.
四维扫描透射电子显微镜(4D-STEM)是一种空间分辨的电子衍射技术,它记录了每个采样点的电子散射分布。4D-STEM为研究人员提供了可以通过多种方式分析样品结构的信息,包括成像,应变测量和缺陷分析。本文介绍了该技术的基本原理和一些应用领域,重点介绍了半导体材料。
{"title":"Four-Dimensional Scanning Transmission Electron Microscopy: Part I: Imaging, Strain Mapping, and Defect Detection","authors":"A. Johnston-Peck, A. Herzing","doi":"10.31399/asm.edfa.2023-3.p012","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-3.p012","url":null,"abstract":"\u0000 Four-dimensional scanning transmission electron microscopy (4D-STEM) is a spatially resolved electron diffraction technique that records the electron scattering distribution at each sampling point. 4D-STEM provides researchers with information that can be analyzed in a multitude of ways to characterize a sample’s structure, including imaging, strain measurement, and defect analysis. This article introduces the basics of the technique and some areas of application with an emphasis on semiconductor materials.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130167878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fundamentals of Circuit Edit 电路编辑基础
Pub Date : 2023-05-01 DOI: 10.31399/asm.edfa.2023-2.p009
David J. Akerson
This article provides an introduction to focused ion beam (FIB) circuit editing, covering the basic process along with best practices and procedures.
本文介绍了聚焦离子束(FIB)电路编辑,包括基本过程以及最佳实践和程序。
{"title":"Fundamentals of Circuit Edit","authors":"David J. Akerson","doi":"10.31399/asm.edfa.2023-2.p009","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-2.p009","url":null,"abstract":"\u0000 This article provides an introduction to focused ion beam (FIB) circuit editing, covering the basic process along with best practices and procedures.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129570491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Artificial Intelligence Applications in Semiconductor Failure Analysis 人工智能在半导体失效分析中的应用
Pub Date : 2023-05-01 DOI: 10.31399/asm.edfa.2023-2.p016
Anna Safont-Andreu, Konstantin Schekotihin, C. Burmer, C. Hollerith, Xue Ming
This article provides a systematic overview of knowledge-based and machine-learning AI methods and their potential for use in automated testing, defect identification, fault prediction, root cause analysis, and equipment scheduling. It also discusses the role of decision-making rules, image annotations, and ontologies in automated workflows, data sharing, and interoperability.
本文系统概述了基于知识和机器学习的人工智能方法及其在自动化测试、缺陷识别、故障预测、根本原因分析和设备调度中的应用潜力。它还讨论了决策规则、图像注释和本体在自动化工作流、数据共享和互操作性中的作用。
{"title":"Artificial Intelligence Applications in Semiconductor Failure Analysis","authors":"Anna Safont-Andreu, Konstantin Schekotihin, C. Burmer, C. Hollerith, Xue Ming","doi":"10.31399/asm.edfa.2023-2.p016","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-2.p016","url":null,"abstract":"\u0000 This article provides a systematic overview of knowledge-based and machine-learning AI methods and their potential for use in automated testing, defect identification, fault prediction, root cause analysis, and equipment scheduling. It also discusses the role of decision-making rules, image annotations, and ontologies in automated workflows, data sharing, and interoperability.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121311911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The EDFAS FA Technology Roadmap—FA Future Roadmap EDFAS FA技术路线图- FA未来路线图
Pub Date : 2023-05-01 DOI: 10.31399/asm.edfa.2023-2.p044
N. Antoniou, B. Foran
This column is part of a series of reports on the findings to date of the EDFAS Failure Analysis Roadmap Councils. The Failure Analysis Future Roadmap Council (FAFRC) is concerned with identifying the longer term needs of the FA community. This article discusses analysis challenges associated with the growing number of elements being incorporated into integrated circuit fabrication. It includes tables summarizing top challenges in front end and package analysis.
本专栏是EDFAS故障分析路线图委员会迄今为止的调查结果系列报告的一部分。故障分析未来路线图委员会(FAFRC)关注识别FA社区的长期需求。本文讨论了与集成电路制造中越来越多的元件相关的分析挑战。它包括总结前端和包分析中的主要挑战的表格。
{"title":"The EDFAS FA Technology Roadmap—FA Future Roadmap","authors":"N. Antoniou, B. Foran","doi":"10.31399/asm.edfa.2023-2.p044","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-2.p044","url":null,"abstract":"\u0000 This column is part of a series of reports on the findings to date of the EDFAS Failure Analysis Roadmap Councils. The Failure Analysis Future Roadmap Council (FAFRC) is concerned with identifying the longer term needs of the FA community. This article discusses analysis challenges associated with the growing number of elements being incorporated into integrated circuit fabrication. It includes tables summarizing top challenges in front end and package analysis.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129565325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Whole-Chip Delayering for Failure Analysis and Quality Assurance 故障分析和质量保证的全芯片分层
Pub Date : 2023-05-01 DOI: 10.31399/asm.edfa.2023-2.p004
D. Douglass, K. Godin
Broad ion beam delayering is a versatile technique for whole-chip failure analysis. The large area of uniformity coupled with the ability to precisely stop at the layer of interest facilitates repeatable, rapid defect detection anywhere on the chip.
宽离子束分层是一种通用的全芯片失效分析技术。大面积的均匀性加上在感兴趣的层精确停止的能力,促进了芯片上任何地方可重复,快速的缺陷检测。
{"title":"Whole-Chip Delayering for Failure Analysis and Quality Assurance","authors":"D. Douglass, K. Godin","doi":"10.31399/asm.edfa.2023-2.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-2.p004","url":null,"abstract":"\u0000 Broad ion beam delayering is a versatile technique for whole-chip failure analysis. The large area of uniformity coupled with the ability to precisely stop at the layer of interest facilitates repeatable, rapid defect detection anywhere on the chip.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129709429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Making Connections: Challenges and Opportunities for In Situ TEM Biasing 连接:原位瞬变电磁法偏置的挑战与机遇
Pub Date : 2023-02-01 DOI: 10.31399/asm.edfa.2023-1.p004
W. Hubbard
This article discusses sample preparation challenges that have impeded progress in producing bias-enabled TEM samples from electronic components, as well as strategies to mitigate these issues.
本文讨论了样品制备方面的挑战,这些挑战阻碍了从电子元件中生产偏置TEM样品的进展,以及缓解这些问题的策略。
{"title":"Making Connections: Challenges and Opportunities for In Situ TEM Biasing","authors":"W. Hubbard","doi":"10.31399/asm.edfa.2023-1.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-1.p004","url":null,"abstract":"\u0000 This article discusses sample preparation challenges that have impeded progress in producing bias-enabled TEM samples from electronic components, as well as strategies to mitigate these issues.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124238635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Package Innovation Roadmap Council (PIRC) Technical Summary 包装创新路线图委员会(PIRC)技术总结
Pub Date : 2023-02-01 DOI: 10.31399/asm.edfa.2023-1.p054
Yan Li
The Package Innovation Roadmap Council (PIRC) was established as part of the Failure Analysis Technology Roadmap activity at the direction of the EDFAS Board. This column provides an overview of a technical paper by the PIRC that highlights recent innovations, technology gaps, and future development trends in package fault isolation and failure analysis. The paper focuses on three main categories: 1) Artificial intelligence (AI) applications, 2) Sample handling, and 3) FA tool robustness.
封装创新路线图委员会(PIRC)是在EDFAS董事会的指导下作为失效分析技术路线图活动的一部分而成立的。本专栏概述了PIRC撰写的一篇技术论文,重点介绍了包故障隔离和故障分析方面的最新创新、技术差距和未来发展趋势。本文主要关注三个主要类别:1)人工智能(AI)应用,2)样本处理,以及3)FA工具鲁棒性。
{"title":"Package Innovation Roadmap Council (PIRC) Technical Summary","authors":"Yan Li","doi":"10.31399/asm.edfa.2023-1.p054","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-1.p054","url":null,"abstract":"\u0000 The Package Innovation Roadmap Council (PIRC) was established as part of the Failure Analysis Technology Roadmap activity at the direction of the EDFAS Board. This column provides an overview of a technical paper by the PIRC that highlights recent innovations, technology gaps, and future development trends in package fault isolation and failure analysis. The paper focuses on three main categories: 1) Artificial intelligence (AI) applications, 2) Sample handling, and 3) FA tool robustness.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122928472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
EDFA Technical Articles
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1