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Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96最新文献

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A low thermal conductivity compound for thermoelectric applications: /spl beta/-Zn4Sb3 用于热电应用的低导热化合物:/spl β /-Zn4Sb3
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553280
T. Caillat, J. Fleurial, A. Borshchevsky
The potential of the semiconducting compound /spl beta/-Zn/sub 4/Sb/sub 3/ for thermoelectric energy conversion was investigated. The thermoelectric properties were measured on hot-pressed samples characterized by X-ray and microprobe analysis. All samples had p-type conductivity and the thermoelectric properties of the samples were measured between room temperature and 400/spl deg/C. Exceptionally low thermal conductivity values were measured and the room temperature lattice thermal conductivity was estimated at 7 mW cm/sup -1/ K/sup -1/. High figures of merit were obtained between 200 and 400/spl deg/C and a maximum dimensionless thermoelectric figure of merit ZT of about 1.3 was obtained at a temperature of 400/spl deg/C. The stability of the compound was investigated by thermogravimetric studies and showed that the samples were stable under Ar atmosphere up to about 400/spl deg/C and up to 250/spl deg/C in dynamic vacuum. The high thermoelectric performance of /spl beta/-Zn/sub 4/Sb/sub 3/ in the 200 to 400/spl deg/C temperature range fills the gap established in the ZT spectrum of p-type state-of-the-art thermoelectric materials between Bi/sub 2/Te/sub 3/-based alloys and PbTe-based alloys. This material, relatively inexpensive, could be used in more efficient thermoelectric generators for waste heat recovery and automobile industry applications, for example.
研究了半导体化合物/spl β /-Zn/sub - 4/Sb/sub - 3/在热电能量转换中的潜力。用x射线和微探针对热压样品进行了热电性能测试。所有样品均具有p型电导率,并在室温至400/spl℃范围内测量了样品的热电性能。测量了极低的导热系数值,室温晶格导热系数估计为7 mW cm/sup -1/ K/sup -1/。在温度为200 ~ 400/spl℃之间获得了较高的热电性能,在温度为400/spl℃时获得了最大无因次热电性能ZT约为1.3。用热重法研究了化合物的稳定性,结果表明,样品在氩气气氛下可稳定到400℃左右,在动态真空中可稳定到250℃左右。/spl β /-Zn/sub 4/Sb/sub 3/在200 ~ 400/spl℃温度范围内的高热电性能填补了p型新型热电材料ZT谱中Bi/sub 2/Te/sub 3/基合金与pbte基合金之间的空白。这种材料相对便宜,可以用于更有效的热电发电机,例如废热回收和汽车工业应用。
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引用次数: 15
The theoretical analysis of the thermoelectric semiconducting crystalline materials figure of merit 理论分析了热电半导体晶体材料的优劣图
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553294
L. Bulat, V. Zakordonets
The thermoelectric figure of merit z is computed for bipolar semiconducting materials with a degenerate gas of current carriers and a nonparabolic band structure. The factors that affect the value of z are analyzed. It is established that the figure of merit of such materials increases monotonically with increasing band gap, in contrast with semiconductors with a parabolic band. It is shown that zT<3 is always true in crystalline thermoelectric materials.
计算了具有载流子简并气体和非抛物带结构的双极半导体材料的热电优值z。分析了影响z值的因素。与具有抛物线型带隙的半导体相比,这种材料的优点系数随带隙的增加而单调增加。结果表明,在晶体热电材料中,zT<3总是成立的。
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引用次数: 2
Use, application and testing of the HZ-14 thermoelectric module HZ-14热电模块的使用、应用和测试
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553508
F.A. Leavitt, N. Elsner, J. Bass
The HZ-14 is a thermoelectric module that converts low grade, waste heat into electricity. To obtain optimum performance from the HZ-14, it is important to address several key points when using the module in an application. These key points in the use of the module are discussed and methods of identifying the causes of inferior performance are addressed. The performance characteristics of the module are also described.
HZ-14是一种热电模块,可将低品位废热转化为电能。为了获得HZ-14的最佳性能,在应用程序中使用该模块时,解决几个关键点是很重要的。讨论了模块使用中的这些关键点,并讨论了识别性能不佳原因的方法。介绍了该模块的性能特点。
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引用次数: 13
Charge carrier mobility in Bi2Te/sub 3-x/Sex(x<0.4) solid solution with excess of Te 过量Te时Bi2Te/sub 3-x/Sex(x<0.4)固溶体中的载流子迁移率
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553253
V. Kutasov, L. N. Luk'yanova, P. Konstantinov, G. T. Alekseeva
Thermoelectric and galvanomagnetic properties of n-Bi/sub 2/Te/sub 3-x/Se/sub x/ (x<0.4) solid solutions with the carrier density /spl les/1.10/sup 18/ cm/sup -3/ are studied. Some peculiarities of the mobility temperature dependence with account of the effective scattering parameter r/sub ef/ are discussed.
研究了载流子密度为/spl /1.10/sup 18/ cm/sup -3/的n-Bi/sub 2/Te/sub 3-x/Se/sub x/ (x<0.4)固溶体的热电特性和电磁特性。讨论了考虑有效散射参数r/sub / ef/时迁移率温度依赖性的一些特性。
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引用次数: 0
On the role of the bulk and surface recombination in the thermopower in bipolar semiconductors 本体和表面复合在双极半导体热功率中的作用
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553300
Y. Gurevich, G. Logvinov, O. I. Lyubimov, O. Titov
The physical transparency of thermopower phenomenon in unipolar case and the clearness of calculation lead to the following paradoxical results: in the case of a bipolar medium the situation seems to be equally obvious, and so the same calculation scheme is used. The aim of this paper is to show that situation changes in bipolar media in principle. If a semiconductor specimen contacts with a heater with temperature T/sub 1/ on the surface x=-a and with a cooler with temperature T/sub 2/ on the surface x=+a, the chemical potential of the electrons and holes are heterogeneous in space and different in all points of the specimen. Thus there are two Fermi quasilevels even in the quasineutrality approximation, and single common "gradient of electrochemical potential" of electrons and holes is absent. One more problem arises when bulk and surface recombinations take place: the correct determination of electron and hole equilibrium concentrations and boundary conditions when thermoelectric current flows in a closed circuit. The aims of this paper are to show the methods of thermopower calculations in case mentioned above and which physical phenomena determine its value.
单极介质热电现象的物理透明性和计算的明确性导致了以下矛盾的结果:在双极介质的情况下,情况似乎同样明显,因此使用相同的计算方案。本文的目的是表明情况的变化在双极媒体原则上。如果半导体试样在x=-a表面与温度为T/sub 1/的加热器接触,在x=+a表面与温度为T/sub 2/的冷却器接触,则电子和空穴的化学势在空间上是不均匀的,并且在试样的所有点上都是不同的。因此,即使在准中性近似中也存在两个费米准能级,并且不存在电子和空穴的单一共同的“电化学电位梯度”。当发生体和表面复合时,又出现了一个问题:当热电电流在闭合回路中流动时,电子和空穴平衡浓度和边界条件的正确测定。本文的目的是说明在上述情况下热功率的计算方法,以及哪些物理现象决定其值。
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引用次数: 0
Transient analysis of thermal junctions within a thermoelectric cooling assembly 热电冷却装置内热结的瞬态分析
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553319
M.J. Nagy, R. Buist
The performance of a thermoelectric (TE) heat exchanger assembly is greatly affected by the quality of the thermal junctions connecting the modules and the mounting surfaces of the heat/cold sinks. The quality of this junction, in turn is affected by many different variables. These include heat sink surface quality, quantity of thermal grease, contaminates in the thermal grease, assembly screw torque, tapped hole quality, surface finish of the modules and the variance in module heights. Until now, junction quality could only be verified by disassembly of the heat exchanger or inferred from a full cooling performance test of the assembly. This paper details a new, transient test method which accurately and dependably characterizes the module-to-heat-sink thermal junctions. A small current is applied to the TE modules in a thermoelectric assembly. This induces a small temperature difference across the module and between the ceramics of the module and its neighboring heat/cold sink. Power is then removed and the module's ceramics return to the temperature of its neighboring heat sink. The rate of temperature decay is directly proportional to the junction quality. Thus, the residual Seebeck decay waveform directly correlates to thermal junction quality, providing the means for rapidly and accurately characterizing assembly quality.
热电(TE)热交换器组件的性能很大程度上受到连接模块的热结和热/冷散热器安装表面的质量的影响。这种连接的质量反过来又受到许多不同变量的影响。这些包括散热器表面质量、导热脂的数量、导热脂中的污染物、装配螺钉扭矩、螺纹孔质量、模块表面光洁度和模块高度的差异。到目前为止,连接处的质量只能通过拆卸热交换器来验证,或者通过对组件进行全面的冷却性能测试来推断。本文详细介绍了一种新的瞬态测试方法,该方法可以准确可靠地表征模块到散热器的热结。在热电组件中的TE模块上施加小电流。这在整个模块之间以及模块的陶瓷与邻近的热/冷水槽之间产生了很小的温差。然后移除电源,模块的陶瓷恢复到邻近散热器的温度。温度衰减的速率与结的质量成正比。因此,残余塞贝克衰减波形与热结质量直接相关,为快速准确地表征装配质量提供了手段。
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引用次数: 2
Thermoelectric properties of CoSb3 prepared by copper mold quenching technique 铜模淬火工艺制备CoSb3的热电性能
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553269
H. Nakagawa, H. Tanaka, A. Kasama, K. Miyamura, H. Masumoto, K. Matsubara
A novel technique to prepare CoSb/sub 3/ materials on a mass production level was studied. Co and Sb were melted together in an alumina crucible at 1373 K, and cast in a copper mold to solidify the melts. The obtained alloyed ingots consist of mainly three phases of CoSb/sub 3/, CoSb/sub 2/ and Sb. To react Sb with CoSb/sub 2/ and get a CoSb/sub 3/ single phase, the ingots were annealed at 823-1073 K. During the heat treatment, Sb and CoSb/sub 2/ phases changed to CoSb/sub 3/ phases and voids. The obtained CoSb/sub 3/ samples show n-type thermoelectric properties. Some factors affecting the properties, for example, Sb/Co atomic ratio, impurity content and density are discussed, based on the experimental data by X-ray diffractometry, optical microscopy, EPMA, chemical analysis and so on. On the other hand, an ingot was ground, mechanically alloyed and hot-pressed. The hot-pressed samples show p-type thermoelectric properties. Moreover, mechanical alloying is effective to reduce the thermal conductivity by refining the crystal grain size of CoSb/sub 3/. As a result, ZT value, 0.10 was obtained at a temperature of 669 K.
研究了一种大规模制备CoSb/sub - 3/材料的新工艺。Co和Sb在1373 K的氧化铝坩埚中熔化在一起,并在铜模中铸造以使熔体凝固。得到的合金锭主要由CoSb/sub - 3/、CoSb/sub - 2/和Sb三相组成。为使Sb与CoSb/sub - 2/发生反应而得到CoSb/sub - 3/单相,将锭在823 ~ 1073 K下退火。在热处理过程中,Sb和CoSb/sub 2/相转变为CoSb/sub 3/相和空洞。得到的CoSb/ sub3 /样品具有n型热电性质。根据x射线衍射、光学显微镜、电子能谱分析、化学分析等实验数据,讨论了Sb/Co原子比、杂质含量、密度等因素对材料性能的影响。另一方面,锭被磨碎,机械合金化和热压。热压样品显示p型热电性能。此外,机械合金化可以通过细化CoSb/sub - 3/的晶粒尺寸来有效降低导热系数。结果表明,在669 K温度下,ZT值为0.10。
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引用次数: 4
Structure and phase formation in amorphous IrxSi/sub 1-x/ thin films at high temperatures 高温下非晶IrxSi/sub - 1-x薄膜的结构和相形成
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553535
W. Pitschke, R. Kurt, A. Heinrich, J. Schumann, J. Thomas, M. Mader
Experimental data on the phase formation process of amorphous Ir/sub x/Si/sub 1-x/ thin films for thermoelectric applications are presented. The composition x varies between 0.30 and 0.40. The phase formation process at temperatures from 300 K up to 1223 K was investigated by means of X-ray diffraction. Distinct phases were observed at the final stage in dependence on the initial composition: Ir/sub 3/Si/sub 4/, Ir/sub 3/Si/sub 5/, and IrSi/sub 3/. The structure of the Ir/sub 3/Si/sub 5/ phase varies in dependence on the chemical composition of the layer. The electrical resistivity of the as-deposited and of annealed at T=973 K and T=1073 K layers was measured at room temperature and in low temperature range.
介绍了热电用非晶Ir/sub -x/ Si/sub - 1-x薄膜相形成过程的实验数据。成分x在0.30和0.40之间变化。用x射线衍射研究了在300 ~ 1223 K温度下的相形成过程。根据初始成分的不同,在最后阶段观察到不同的相:Ir/sub 3/Si/sub 4/, Ir/sub 3/Si/sub 5/和IrSi/sub 3/。Ir/sub 3/Si/sub 5/相的结构随层的化学成分而变化。在室温和低温范围内分别测量了T=973 K和T=1073 K时沉积层和退火层的电阻率。
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引用次数: 2
Effect of anisotropy of the Seebeck coefficient on the thermal conductivity of polycrystalline BiSb alloys 塞贝克系数各向异性对多晶BiSb合金导热性能的影响
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553247
H. Goldsmid, J. Sharp
In 1961, Cosgrove, McHugh and Tiller reported the effect of micro-segregation in fast-grown bismuth telluride on the thermal conductivity. They attributed a significant increase in this property to the presence of circulating electric currents associated with the non-uniform Seebeck coefficient in the inhomogeneous material. If this effect is an important one, then it could seriously impair the performance of thermoelements made from polycrystalline BiSb alloys since, even if such materials are chemically homogeneous, they will have local variations of the Seebeck coefficient associated with the anisotropy of this parameter in single crystals. We now think that circulating thermoelectric currents are not the main reason for the increase of thermal conductivity in inhomogeneous bismuth telluride. Such currents should have an even smaller effect in BiSb alloys and should not cause any substantial decrease in the figure of merit. This is borne out by measurements on the thermal conductivity of large-grained polycrystalline BiSb alloys. Using a technique for the determination of the electronic component that is described elsewhere, it has been found that the residual thermal conductivity is very close to the lattice component that is predicted form observations on single crystals. This would not be so if there were any significant heat transfer by internal circulating currents.
1961年,Cosgrove, McHugh和Tiller报道了快速生长碲化铋中微偏析对导热性的影响。他们将这种特性的显著增加归因于与非均匀材料中不均匀塞贝克系数相关的循环电流的存在。如果这种影响是一个重要的影响,那么它可能会严重损害由多晶铋合金制成的热元件的性能,因为即使这些材料在化学上是均匀的,它们也会有与单晶中该参数的各向异性相关的塞贝克系数的局部变化。我们现在认为循环热电流不是非均匀碲化铋导热系数增加的主要原因。这样的电流对铋合金的影响应该更小,而且不应该导致任何实质性的性能下降。这是通过测量大晶粒多晶铋合金的导热性来证实的。使用其他地方描述的测定电子元件的技术,已经发现残余热导率非常接近从单晶观察中预测的晶格元件。如果内部循环电流有任何重要的热传递,这就不是这样了。
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引用次数: 2
Optimization of a multistage thermoelectric cooling system concerning maximum COP 考虑最大COP的多级热电冷却系统优化
Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553497
T. Wartanowicz, A. Czarnecki
In the process of designing multistage thermoelectric cooling systems, accuracy of computations is very important. For this purpose, a useful optimization algorithm was elaborated where the thermoelectric parameters of semiconductors are considered as temperature dependent. The presented method allows an optimal solution for systems, thus achieving maximum COP.
在多级热电冷却系统的设计过程中,计算的准确性是非常重要的。为此,在考虑半导体热电参数与温度相关的情况下,阐述了一种有用的优化算法。所提出的方法允许系统的最优解,从而实现最大的COP。
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引用次数: 3
期刊
Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96
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