Pub Date : 2024-09-06DOI: 10.1109/TPS.2024.3450867
Yifan Wang;Lei Shi;Bo Yao;Zongyuan Liu;Kai Guo
The ablation of thermal protection materials during the re-entry of a hypersonic vehicle alters plasma sheath characteristics, significantly affecting the vehicle’s communication performance. Terahertz (THz) technology emerges as one of the effective potential solutions for overcoming the high electron density encountered during the traditional re-entry blackout period. This article investigates the transmission characteristics of THz waves in the plasma sheath under two typical ablation conditions: phenolic graphite and Teflon, considering the effects of alkali metal impurities and the mass fraction of ablation products. Our results show that the total alkali metal content significantly increases the electron number density, with peak electron densities about an order of magnitude higher than those of Teflon. The collision frequency in phenolic graphite material varies nonlinearly due to differences in ablation product mass fractions and exhibits trends opposite to those of Teflon with altitude, with maximum deviations exceeding 50 GHz. Propagation attenuation analysis indicates that the minimum frequency of EM waves should be above 0.13 THz to mitigate the impact of alkali metal content on communication quality. In practical applications, selecting materials with low alkali metal content proves effective, allowing communication frequencies to be reduced to as low as 0.03 THz with Teflon to meet communication demands.
{"title":"Propagation Characteristics of the THz Wave in Plasma Sheath Under the Conditions of Ablation of Thermal Protection Materials","authors":"Yifan Wang;Lei Shi;Bo Yao;Zongyuan Liu;Kai Guo","doi":"10.1109/TPS.2024.3450867","DOIUrl":"10.1109/TPS.2024.3450867","url":null,"abstract":"The ablation of thermal protection materials during the re-entry of a hypersonic vehicle alters plasma sheath characteristics, significantly affecting the vehicle’s communication performance. Terahertz (THz) technology emerges as one of the effective potential solutions for overcoming the high electron density encountered during the traditional re-entry blackout period. This article investigates the transmission characteristics of THz waves in the plasma sheath under two typical ablation conditions: phenolic graphite and Teflon, considering the effects of alkali metal impurities and the mass fraction of ablation products. Our results show that the total alkali metal content significantly increases the electron number density, with peak electron densities about an order of magnitude higher than those of Teflon. The collision frequency in phenolic graphite material varies nonlinearly due to differences in ablation product mass fractions and exhibits trends opposite to those of Teflon with altitude, with maximum deviations exceeding 50 GHz. Propagation attenuation analysis indicates that the minimum frequency of EM waves should be above 0.13 THz to mitigate the impact of alkali metal content on communication quality. In practical applications, selecting materials with low alkali metal content proves effective, allowing communication frequencies to be reduced to as low as 0.03 THz with Teflon to meet communication demands.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 7","pages":"3043-3050"},"PeriodicalIF":1.3,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-05DOI: 10.1109/tps.2024.3436054
A. P. Shah, B. J. Sporer, G. V. Dowhan, K. W. Elliott, M. Krishnan, N. M. Jordan, R. D. McBride
{"title":"Development of a Gas-Puff Z-Pinch for the MAIZE Linear Transformer Driver","authors":"A. P. Shah, B. J. Sporer, G. V. Dowhan, K. W. Elliott, M. Krishnan, N. M. Jordan, R. D. McBride","doi":"10.1109/tps.2024.3436054","DOIUrl":"https://doi.org/10.1109/tps.2024.3436054","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"33 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-05DOI: 10.1109/TPS.2024.3451017
Mengmei Zhang;Kun Shen;Haoxiang Chen;Mengyao Wu
Ion tube is a type of dielectric barrier discharge (DBD) device widely applied in the field of air pollution treatment. The operational state of ion tube is a crucial factor that affects the efficiency of air pollution treatment. Manual inspection is the primary method for monitoring the state of ion tube. This approach suffers from issues such as time-consuming, labor-intensive, and heavily reliant on personal experience. To achieve automation and intelligence of fault diagnosis for ion tube, this article uses a neural network to design an online measurement scheme of ion tube’s Lissajous figure, the nonlinear relationship of signals from the low-voltage side to high-voltage side of the ion tube transformer is fit by neural network. And based on the measured low-voltage side signals, the ion tube’s Lissajous figure is calculated by the designed neural network. Moreover, the convolutional neural network (CNN) is used to construct the fault diagnosis scheme for ion tube and the ion tube’s Lissajous figure is classified by a two-level classification scheme. The primary classification CNN distinguishes between punctured and nonpunctured ion tube, and then the secondary classification CNN categorizes nonpunctured ion tube into brand-new, semi-new, and damaged ion tube. The experimental results indicate that the designed online measurement technology of ion tube’s Lissajous figure has the same measurement accuracy as traditional methods and does not require oscilloscopes, high-voltage probes, and external measurement capacitors. And the designed fault diagnosis technology for ion tube effectively distinguishes four fault states of ion tube with high accuracy.
{"title":"Research on Fault Diagnosis Technology for Ion Tube Based on Neural Network","authors":"Mengmei Zhang;Kun Shen;Haoxiang Chen;Mengyao Wu","doi":"10.1109/TPS.2024.3451017","DOIUrl":"10.1109/TPS.2024.3451017","url":null,"abstract":"Ion tube is a type of dielectric barrier discharge (DBD) device widely applied in the field of air pollution treatment. The operational state of ion tube is a crucial factor that affects the efficiency of air pollution treatment. Manual inspection is the primary method for monitoring the state of ion tube. This approach suffers from issues such as time-consuming, labor-intensive, and heavily reliant on personal experience. To achieve automation and intelligence of fault diagnosis for ion tube, this article uses a neural network to design an online measurement scheme of ion tube’s Lissajous figure, the nonlinear relationship of signals from the low-voltage side to high-voltage side of the ion tube transformer is fit by neural network. And based on the measured low-voltage side signals, the ion tube’s Lissajous figure is calculated by the designed neural network. Moreover, the convolutional neural network (CNN) is used to construct the fault diagnosis scheme for ion tube and the ion tube’s Lissajous figure is classified by a two-level classification scheme. The primary classification CNN distinguishes between punctured and nonpunctured ion tube, and then the secondary classification CNN categorizes nonpunctured ion tube into brand-new, semi-new, and damaged ion tube. The experimental results indicate that the designed online measurement technology of ion tube’s Lissajous figure has the same measurement accuracy as traditional methods and does not require oscilloscopes, high-voltage probes, and external measurement capacitors. And the designed fault diagnosis technology for ion tube effectively distinguishes four fault states of ion tube with high accuracy.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 6","pages":"2313-2322"},"PeriodicalIF":1.3,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1109/tps.2024.3410644
Joe O. Allen, Shail Desai, Simon Freethy, Keith Hawkins, Mark A. Henderson, Carsten Lechte, Jonathan Pearl, Burkhard Plaum, Helen Webster
{"title":"Design Update on the MAST-Upgrade Microwave Heating and Current Drive System Launchers","authors":"Joe O. Allen, Shail Desai, Simon Freethy, Keith Hawkins, Mark A. Henderson, Carsten Lechte, Jonathan Pearl, Burkhard Plaum, Helen Webster","doi":"10.1109/tps.2024.3410644","DOIUrl":"https://doi.org/10.1109/tps.2024.3410644","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"28 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1109/TPS.2024.3450729
Yue Wu;Jian-cang Su;Hao-Ran Zhang;Xu-Dong Qiu;Bin-Xiong Yu;Liang Zhao;Shuai Shao;Ming-Zhu Gao;Jia-Ru Shi
A method of measuring field emission current under high-voltage (HV) pulse is proposed. The method makes it more convenient to study electron emission under HV pulse. Based on the Kirchhoff law, this method can fundamentally solve the problem, which the emission current is usually covered up by the displacement current. In addition, the method can ensure the safety of oscilloscope and the accuracy of the measurement when the gap gets breakdown. The resolution analysis of this method is carried out. The resolution is positively correlated with the output resistance and negatively correlated with the summation of output capacitance and electrodes capacitance. The resolution, under microsecond and millisecond HV pulse, can achieve $mu $ A to A class. The measurement platform based on this method contains an energy-storage capacitor, a load resistor, an HV pulse power supply, an electrode cavity, and three resistor-capacitor (R–C) voltage dividers.
提出了一种在高压脉冲下测量场发射电流的方法。该方法为研究高压脉冲下的电子发射提供了更多便利。基于基尔霍夫定律，该方法从根本上解决了发射电流通常被位移电流掩盖的问题。此外，该方法还能确保示波器的安全性和间隙击穿时的测量精度。对该方法进行了分辨率分析。分辨率与输出电阻呈正相关，与输出电容和电极电容之和呈负相关。在微秒级和毫秒级高压脉冲下，分辨率可达到 $mu $ A 至 A 级。基于该方法的测量平台包含一个储能电容器、一个负载电阻、一个高压脉冲电源、一个电极腔和三个电阻电容（R-C）分压器。
{"title":"Method of Measuring Field Emission Current Under High-Voltage Pulse","authors":"Yue Wu;Jian-cang Su;Hao-Ran Zhang;Xu-Dong Qiu;Bin-Xiong Yu;Liang Zhao;Shuai Shao;Ming-Zhu Gao;Jia-Ru Shi","doi":"10.1109/TPS.2024.3450729","DOIUrl":"10.1109/TPS.2024.3450729","url":null,"abstract":"A method of measuring field emission current under high-voltage (HV) pulse is proposed. The method makes it more convenient to study electron emission under HV pulse. Based on the Kirchhoff law, this method can fundamentally solve the problem, which the emission current is usually covered up by the displacement current. In addition, the method can ensure the safety of oscilloscope and the accuracy of the measurement when the gap gets breakdown. The resolution analysis of this method is carried out. The resolution is positively correlated with the output resistance and negatively correlated with the summation of output capacitance and electrodes capacitance. The resolution, under microsecond and millisecond HV pulse, can achieve \u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000A to A class. The measurement platform based on this method contains an energy-storage capacitor, a load resistor, an HV pulse power supply, an electrode cavity, and three resistor-capacitor (R–C) voltage dividers.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 7","pages":"2661-2667"},"PeriodicalIF":1.3,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The gouging seriously affects the reliability and the life of railguns, and oblique impact is considered the main reason for gouging. In this article, a pulse power technology method for the current-carrying oblique impact using an electromagnetic (EM) repulsive disk was proposed. The strain rate of $1.5times 10^{4}$ /s and the current density of $2.48times 10^{9}$ A/m2 on the specimen were obtained by the numerical simulation. The dynamic impact damage and deposition characteristics of AA7075 and T2 copper contact interface under high current density and high strain rate were investigated. By comparing the microscopic characteristics distribution of the specimen profiles and surfaces under different current densities, the results are given as follows. The method is capable of generating gouging-like craters. The deformed area of the crater bottom exhibits obvious grain elongation and refinement. As the current increases, the depth of the crater and the thickness of the deformed layer gradually increase. The application of pulsed current stimulates aluminum deposition and the emergence of new phases. The influence of current on the mechanical properties is evident in the reduction of hardness and yield stress at the base of the craters.
{"title":"Investigation of Current-Carrying Oblique Impacts on the Copper–Aluminum Interface for Damage Characteristics","authors":"Weihao Li;Qiancheng Hu;Chengcheng Li;Shiyu Hao;Hao Shi;Ran An;Xingwen Li;Li Chen","doi":"10.1109/TPS.2024.3446661","DOIUrl":"10.1109/TPS.2024.3446661","url":null,"abstract":"The gouging seriously affects the reliability and the life of railguns, and oblique impact is considered the main reason for gouging. In this article, a pulse power technology method for the current-carrying oblique impact using an electromagnetic (EM) repulsive disk was proposed. The strain rate of \u0000<inline-formula> <tex-math>$1.5times 10^{4}$ </tex-math></inline-formula>\u0000/s and the current density of \u0000<inline-formula> <tex-math>$2.48times 10^{9}$ </tex-math></inline-formula>\u0000 A/m2 on the specimen were obtained by the numerical simulation. The dynamic impact damage and deposition characteristics of AA7075 and T2 copper contact interface under high current density and high strain rate were investigated. By comparing the microscopic characteristics distribution of the specimen profiles and surfaces under different current densities, the results are given as follows. The method is capable of generating gouging-like craters. The deformed area of the crater bottom exhibits obvious grain elongation and refinement. As the current increases, the depth of the crater and the thickness of the deformed layer gradually increase. The application of pulsed current stimulates aluminum deposition and the emergence of new phases. The influence of current on the mechanical properties is evident in the reduction of hardness and yield stress at the base of the craters.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 6","pages":"2349-2358"},"PeriodicalIF":1.3,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1109/TPS.2024.3443908
Xiaojing Ren;Longbo Yan;Weihua Jiang;Jingming Gao;Hanwu Yang
As an extension research of pulse power generation method, we proposed a new variant of pulse generation circuit based on hybrid energy storage (HES). The energy storage structure of the proposed circuit is a series connection of two capacitors and one inductor, referred as a CLC series HES circuit. Under the control of two switches, the capacitors on both sides simultaneously transfer energy to the center inductor, shortening the inductor’s charging time. Moreover, these two switches act as opening switches for inductive discharge, and their current is only half of the inductor current, meaning that this CLC circuit can effectively alleviate the current limitation of the opening switches. In this research, based on power SiC MOSFETs, experimental circuits have been set up to verify the feasibility of the proposed circuit. As a result, when charging at 200 V, the output voltage of one CLC module on a $10~Omega $ load is ~800 V, with a rise time of ~13 ns and a pulse half width of ~24 ns, and the operation stability at 1000 Hz has been demonstrated. Finally, by gradually increasing the module number to four stages, the stackability of the multiple-module CLC series HES pulse generation circuit has also been confirmed. When the charging voltage is 800 V, the output voltage on a ~40- $Omega $ load is ~2.9 kV with a rise time of 17 ns.
{"title":"A Pulse Generation Circuit Based on Series Hybrid Energy Storage","authors":"Xiaojing Ren;Longbo Yan;Weihua Jiang;Jingming Gao;Hanwu Yang","doi":"10.1109/TPS.2024.3443908","DOIUrl":"10.1109/TPS.2024.3443908","url":null,"abstract":"As an extension research of pulse power generation method, we proposed a new variant of pulse generation circuit based on hybrid energy storage (HES). The energy storage structure of the proposed circuit is a series connection of two capacitors and one inductor, referred as a CLC series HES circuit. Under the control of two switches, the capacitors on both sides simultaneously transfer energy to the center inductor, shortening the inductor’s charging time. Moreover, these two switches act as opening switches for inductive discharge, and their current is only half of the inductor current, meaning that this CLC circuit can effectively alleviate the current limitation of the opening switches. In this research, based on power SiC MOSFETs, experimental circuits have been set up to verify the feasibility of the proposed circuit. As a result, when charging at 200 V, the output voltage of one CLC module on a \u0000<inline-formula> <tex-math>$10~Omega $ </tex-math></inline-formula>\u0000 load is ~800 V, with a rise time of ~13 ns and a pulse half width of ~24 ns, and the operation stability at 1000 Hz has been demonstrated. Finally, by gradually increasing the module number to four stages, the stackability of the multiple-module CLC series HES pulse generation circuit has also been confirmed. When the charging voltage is 800 V, the output voltage on a ~40-\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000 load is ~2.9 kV with a rise time of 17 ns.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 7","pages":"2926-2932"},"PeriodicalIF":1.3,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1109/tps.2024.3439270
Francesco Mirizzi, Gianluca Ravera, Silvio Ceccuzzi, Franco Di Paolo, Stefano Fantauzzi, Lorenzo Valletti
{"title":"Comparative Analysis of Vacuum Feedthroughs for the DTT ICRH System","authors":"Francesco Mirizzi, Gianluca Ravera, Silvio Ceccuzzi, Franco Di Paolo, Stefano Fantauzzi, Lorenzo Valletti","doi":"10.1109/tps.2024.3439270","DOIUrl":"https://doi.org/10.1109/tps.2024.3439270","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"10 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1109/TPS.2024.3446817
Lan Peng;Haihong Huang;Haixin Wang
Insulated gate bipolar transistor (IGBT) parallel connection is an effective way to solve the problem, which is the gradual increase in the capacity of the magnetic confinement power supply in a Tokamak device. Static current balance (SCB) is one of the key factors for the safe and stable operation of a parallel IGBT system. Therefore, to improve the stability of parallel IGBT systems, it is very important to study the current difference in the parallel IGBTs under various parameter differences. However, the existing results have focused mainly on device parameter matching through device screening, driving parameter matching using the active gate driving (AGD) method, or single parasitic parameter (PP) matching. These research results do not analyze the matching strategy between multiple parameters, which are the device parameter and the PP. The study showed that the collector inductance, emitter parasitic inductance, emitter parasitic resistance, collector equivalent resistance, and equivalent series voltage of the IGBTs have a significant impact on the SCB of the parallel IGBTs. When these five parameters are mismatched, there exists an equilibrium point that can reduce the static current difference (SCD) between the parallel IGBTs under the total influence of these parameter differences. Therefore, a current difference model (CDM) is created to analyze the equilibrium point of multiple parameter mismatches. The experimental results show that the multiparameter compensation scheme implemented by the CDM can effectively reduce the current difference between parallel IGBTs, which provides a feasible reference for device selection and circuit design.
{"title":"Static Current Balancing Strategy for Parallel IGBTs Based on Parametric Compensation","authors":"Lan Peng;Haihong Huang;Haixin Wang","doi":"10.1109/TPS.2024.3446817","DOIUrl":"10.1109/TPS.2024.3446817","url":null,"abstract":"Insulated gate bipolar transistor (IGBT) parallel connection is an effective way to solve the problem, which is the gradual increase in the capacity of the magnetic confinement power supply in a Tokamak device. Static current balance (SCB) is one of the key factors for the safe and stable operation of a parallel IGBT system. Therefore, to improve the stability of parallel IGBT systems, it is very important to study the current difference in the parallel IGBTs under various parameter differences. However, the existing results have focused mainly on device parameter matching through device screening, driving parameter matching using the active gate driving (AGD) method, or single parasitic parameter (PP) matching. These research results do not analyze the matching strategy between multiple parameters, which are the device parameter and the PP. The study showed that the collector inductance, emitter parasitic inductance, emitter parasitic resistance, collector equivalent resistance, and equivalent series voltage of the IGBTs have a significant impact on the SCB of the parallel IGBTs. When these five parameters are mismatched, there exists an equilibrium point that can reduce the static current difference (SCD) between the parallel IGBTs under the total influence of these parameter differences. Therefore, a current difference model (CDM) is created to analyze the equilibrium point of multiple parameter mismatches. The experimental results show that the multiparameter compensation scheme implemented by the CDM can effectively reduce the current difference between parallel IGBTs, which provides a feasible reference for device selection and circuit design.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 7","pages":"2907-2916"},"PeriodicalIF":1.3,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1109/TPS.2024.3447868
Gaurav Varshney;Maitri Mahak
An absorber containing a vanadium dioxide (VO2) resonator is designed and numerically studied to provide the thermally switchable response between the broad and narrow absorption spectrum. In the insulating phase, VO2 resonator supports the dielectric resonance through the creation of standing waves to provide the narrow absorption spectrum with a high quality factor of more than 300. In the metallic phase, the surface charge distribution on the resonator remains responsible to excite the fundamental and higher order magnetic dipoles with the nearby and merged spectrum hence a broad absorption band covering 2.19–5.56 THz is achieved. The absorber response can be thermally switchable. The geometry of the absorber can excite the multiple narrow resonances based on Brewster’s effect. Also, the scanning of incident angle can provide a tunable narrow spectrum over a broad spectral range. The absorber operation is validated through the theory of multiple reflections.
{"title":"Phase Transition Driven and Angle Multiplexed Broad/Narrowband THz Absorber","authors":"Gaurav Varshney;Maitri Mahak","doi":"10.1109/TPS.2024.3447868","DOIUrl":"10.1109/TPS.2024.3447868","url":null,"abstract":"An absorber containing a vanadium dioxide (VO2) resonator is designed and numerically studied to provide the thermally switchable response between the broad and narrow absorption spectrum. In the insulating phase, VO2 resonator supports the dielectric resonance through the creation of standing waves to provide the narrow absorption spectrum with a high quality factor of more than 300. In the metallic phase, the surface charge distribution on the resonator remains responsible to excite the fundamental and higher order magnetic dipoles with the nearby and merged spectrum hence a broad absorption band covering 2.19–5.56 THz is achieved. The absorber response can be thermally switchable. The geometry of the absorber can excite the multiple narrow resonances based on Brewster’s effect. Also, the scanning of incident angle can provide a tunable narrow spectrum over a broad spectral range. The absorber operation is validated through the theory of multiple reflections.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 7","pages":"3079-3082"},"PeriodicalIF":1.3,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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