We introduce the concept of optical spin current—transfer of optical spin angular momentum by an electromagnetic field without accompanying energy transfer. This phenomenon is analogous to electron spin currents, in which spin flow is decoupled from charge flow. Building on this principle, we propose an optical spin diode and an optical spin circulator–devices that enable unidirectional propagation of spin currents while maintaining bidirectional energy flow, thus, preserving reciprocity. Furthermore, we demonstrate asymmetric spin transfer between two quantum dots mediated by the optical spin diode, highlighting its potential for novel optical spintronic functionalities. These findings lay the foundation for devices leveraging optical spin transfer, opening new avenues in optical spintronics.
{"title":"Optical spintronics: Towards optical communication without energy transfer","authors":"Ilya Deriy , Danil Kornovan , Mihail Petrov , Andrey Bogdanov","doi":"10.1016/j.photonics.2025.101458","DOIUrl":"10.1016/j.photonics.2025.101458","url":null,"abstract":"<div><div>We introduce the concept of optical spin current—transfer of optical spin angular momentum by an electromagnetic field without accompanying energy transfer. This phenomenon is analogous to electron spin currents, in which spin flow is decoupled from charge flow. Building on this principle, we propose an optical spin diode and an optical spin circulator–devices that enable unidirectional propagation of spin currents while maintaining bidirectional energy flow, thus, preserving reciprocity. Furthermore, we demonstrate asymmetric spin transfer between two quantum dots mediated by the optical spin diode, highlighting its potential for novel optical spintronic functionalities. These findings lay the foundation for devices leveraging optical spin transfer, opening new avenues in optical spintronics.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"67 ","pages":"Article 101458"},"PeriodicalIF":2.9,"publicationDate":"2025-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145366053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-17DOI: 10.1016/j.photonics.2025.101459
Li Lin , Bowei Xie , Xingcan Li , Jia-yue Yang
The accelerated development of armaments and detection technologies has led to a growing demand for stealth films that are capable of both multiband stealth and effective heat dissipation. In this work, a multilayer film is proposed to achieve optically transparent and infrared stealth, while also providing exceptional heat dissipation, with high emittance of 0.831 and 0.820 in the bands of 2.5–3 and 5–8 μm, respectively. The film's emittance tunability exceeds 0.600, showcasing its outstanding modulation capabilities. In the VIS band, the film's transmittance is 0.588 in the metallic state and 0.553 in the insulating state, which facilitates its application in military equipment windows. The underlying mechanism for these properties involves FP resonance and multiple reflections. Calculations regarding the infrared signal intensity reduction and infrared image confirm the film's exceptional camouflage performance. This technology facilitates the progress and practical deployment of optically transparent stealth films.
{"title":"Optically transparent multiband stealth film compatible with dual-band heat dissipation","authors":"Li Lin , Bowei Xie , Xingcan Li , Jia-yue Yang","doi":"10.1016/j.photonics.2025.101459","DOIUrl":"10.1016/j.photonics.2025.101459","url":null,"abstract":"<div><div>The accelerated development of armaments and detection technologies has led to a growing demand for stealth films that are capable of both multiband stealth and effective heat dissipation. In this work, a multilayer film is proposed to achieve optically transparent and infrared stealth, while also providing exceptional heat dissipation, with high emittance of 0.831 and 0.820 in the bands of 2.5–3 and 5–8 μm, respectively. The film's emittance tunability exceeds 0.600, showcasing its outstanding modulation capabilities. In the VIS band, the film's transmittance is 0.588 in the metallic state and 0.553 in the insulating state, which facilitates its application in military equipment windows. The underlying mechanism for these properties involves FP resonance and multiple reflections. Calculations regarding the infrared signal intensity reduction and infrared image confirm the film's exceptional camouflage performance. This technology facilitates the progress and practical deployment of optically transparent stealth films.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"67 ","pages":"Article 101459"},"PeriodicalIF":2.9,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145335157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101419
K. Hasanirokh , E.B. AL , A.T. Tuzemen , M. Sayrac , H. Sayrac , F. Ungan
{"title":"Corrigendum to “Investigation of nonlinear optical properties in GaAs/GaAlAs quantum well with modified Lennard-Jones potential: Role of static electromagnetic fields, intense laser radiation and structure parameters” [Photonics Nanostruct. - Fundam. Appl. 65 (2025) 101403]","authors":"K. Hasanirokh , E.B. AL , A.T. Tuzemen , M. Sayrac , H. Sayrac , F. Ungan","doi":"10.1016/j.photonics.2025.101419","DOIUrl":"10.1016/j.photonics.2025.101419","url":null,"abstract":"","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101419"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144988325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
THz wave can be modulated by electrical bias or by optical pumping. In the present work, we have fabricated graphene (Gr) based THz modulator on two Si/SiO2 substrates with different resistivities (10 kΩ.cm and 5 kΩ.cm) and studied the effect of their resistivities and doping on THz modulation by optical pumping. THz modulation by optical pumping was measured for 0.2 THz to 0.6 THz frequency range with varying pumping power from 0 mW to 800 mW using a 976 nm laser. The estimated modulation depth was ≈ 99 % at 800 mW in graphene on Si/SiO2 having lower resistivity (LRSi/SiO2) whereas it was < 2 % in graphene on Si/SiO2 having higher resistivity (HRSi/SiO2). The higher value of modulation depth in graphene on LRSi/SiO2 has been attributed to the lower resistivity of the substrate resulted in a larger number of free carriers for photoconduction in LRSi/SiO2 which contributed to the greater carrier concentration and THz conductivity. Raman spectroscopy further confirmed that the doping is greater in graphene on LRSi/SiO2 as compared to graphene on HRSi/SiO2. This resulted in an enhanced number of photocarriers responsible for higher THz modulation.
{"title":"Investigation of the effect of resistivity and defects on optical THz modulation of graphene on Si/SiO2 substrate","authors":"Abhilasha Chouksey , Shivnath Kumar , Preeti Gaur , Preeti Garg , Radhapiyari Laishram , Anupama Singh , J.S. Rawat , Neeraj Khare","doi":"10.1016/j.photonics.2025.101451","DOIUrl":"10.1016/j.photonics.2025.101451","url":null,"abstract":"<div><div>THz wave can be modulated by electrical bias or by optical pumping. In the present work, we have fabricated graphene (Gr) based THz modulator on two Si/SiO<sub>2</sub> substrates with different resistivities (10 kΩ.cm and 5 kΩ.cm) and studied the effect of their resistivities and doping on THz modulation by optical pumping. THz modulation by optical pumping was measured for 0.2 THz to 0.6 THz frequency range with varying pumping power from 0 mW to 800 mW using a 976 nm laser. The estimated modulation depth was ≈ 99 % at 800 mW in graphene on Si/SiO<sub>2</sub> having lower resistivity (LRSi/SiO<sub>2</sub>) whereas it was < 2 % in graphene on Si/SiO<sub>2</sub> having higher resistivity (HRSi/SiO<sub>2</sub>). The higher value of modulation depth in graphene on LRSi/SiO<sub>2</sub> has been attributed to the lower resistivity of the substrate resulted in a larger number of free carriers for photoconduction in LRSi/SiO<sub>2</sub> which contributed to the greater carrier concentration and THz conductivity. Raman spectroscopy further confirmed that the doping is greater in graphene on LRSi/SiO<sub>2</sub> as compared to graphene on HRSi/SiO<sub>2</sub>. This resulted in an enhanced number of photocarriers responsible for higher THz modulation.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101451"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145324206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101445
Kai Lu , Long Chen , Chengyuan Li , Haojun Zhu , Chengchao Wang , Lanxin Ma
Colored passive cooling combines vibrant coloration with passive cooling capabilities, attracting significant interest in sustainable energy applications. While nanostructured colored passive cooling designs show promise, achieving precise colors with cooling power remains computationally challenging due to complex geometric parameter optimization. This study presents an innovative bidirectional design framework combining bidirectional neural network (BNN) and genetic algorithm (GA), to assist in the design of multilayer films. BNN accurately forecasts color and cooling power (99.67 % accuracy) from structural parameters and temperature T, and inversely designs geometric parameters (99.86 % accuracy) based on desired color and cooling performance at the given temperature. Crucially, the GA-based framework explores multiple high-precision solutions based on desired parameters, effectively addressing the “one-to-many” inverse design problem, overcoming the BNN’s single-solution limitation. The designed PMMA/TiN/TiO2/Ag films achieve a broad color gamut, covering 62 % of the CIE-1931 color space, while maintaining its equilibrium temperature only 2 −3 K above the ideal device. Together, these machine learning frameworks establish a full-cycle design paradigm: BNN enables bidirectional property-structure mapping with ultra-high accuracy while the GA- forward prediction model hybrid efficiently generates diverse optimal designs satisfying multi-objective constraints. This dual methodology accelerates the discovery of novel colored passive coolers, accelerating the development and deployment of energy-efficient solutions for significant contributions to energy conservation and sustainable development.
{"title":"Intelligent design of colored passive cooling multilayer films using bidirectional neural networks and genetic algorithms","authors":"Kai Lu , Long Chen , Chengyuan Li , Haojun Zhu , Chengchao Wang , Lanxin Ma","doi":"10.1016/j.photonics.2025.101445","DOIUrl":"10.1016/j.photonics.2025.101445","url":null,"abstract":"<div><div>Colored passive cooling combines vibrant coloration with passive cooling capabilities, attracting significant interest in sustainable energy applications. While nanostructured colored passive cooling designs show promise, achieving precise colors with cooling power remains computationally challenging due to complex geometric parameter optimization. This study presents an innovative bidirectional design framework combining bidirectional neural network (BNN) and genetic algorithm (GA), to assist in the design of multilayer films. BNN accurately forecasts color and cooling power (99.67 % accuracy) from structural parameters and temperature <em>T</em>, and inversely designs geometric parameters (99.86 % accuracy) based on desired color and cooling performance at the given temperature. Crucially, the GA-based framework explores multiple high-precision solutions based on desired parameters, effectively addressing the “one-to-many” inverse design problem, overcoming the BNN’s single-solution limitation. The designed PMMA/TiN/TiO<sub>2</sub>/Ag films achieve a broad color gamut, covering 62 % of the CIE-1931 color space, while maintaining its equilibrium temperature only 2 −3 K above the ideal device. Together, these machine learning frameworks establish a full-cycle design paradigm: BNN enables bidirectional property-structure mapping with ultra-high accuracy while the GA- forward prediction model hybrid efficiently generates diverse optimal designs satisfying multi-objective constraints. This dual methodology accelerates the discovery of novel colored passive coolers, accelerating the development and deployment of energy-efficient solutions for significant contributions to energy conservation and sustainable development.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101445"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145046092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101446
Ferhat Hanife , Yosef Badali
In this study, the photoconductive properties of a Schottky photodiode with the structure Au/PVA:Graphite-Er₂O₃/n-Si are investigated both in the dark and under varying light intensities. A thin layer of the polyvinyl alcohol doped with Graphite-Er₂O₃ is placed at the metal-semiconductor interface to create an Schottky photodiode with a metal-nanocomposite-semiconductor structure. The fabrication and preparation techniques are thoroughly documented. X-ray diffraction (XRD) is used to analyze the Graphite and Er₂O₃ nanostructures. Several key photoconductive properties, such as leakage or reverse-saturation current (I₀), electric potential barrier height (ΦB0), and ideality factor (n), series/shunt resistances (Rs/Rsh), surface/interface state density distribution (Nss), photocurrent (Iph), photosensitivity (S), optical responsivity (R), and specific detectivity (D*) have been determined. Increasing light intensity leads to higher I₀ and n values, and lower ΦB0 and Rs values. When studying the illumination dependency of photocurrent, the Iph–P plots at zero bias voltage exhibit a linear behavior within an acceptable range. The PVA:Graphite-Er₂O₃ nanocomposite enhances the photosensitivity of the metal-nanocomposite-semiconductor type photodiode, optical responsivity, and specific detectivity by 1120, 2.40 mA/W, and 3.13 × 10 ¹ ⁰ Jones, respectively. These results suggest that the Au/PVA:Graphite-Er₂O₃/n-Si structure exhibits a promising photoresponse and could potentially replace traditional metal-semiconductor photodiode in optoelectronic devices and photovoltaic systems.
{"title":"Optical response of Au/n-Si schottky photodiode with an interface of graphite-Er2O3-doped polyvinyl alcohol (PVA) nanocomposite","authors":"Ferhat Hanife , Yosef Badali","doi":"10.1016/j.photonics.2025.101446","DOIUrl":"10.1016/j.photonics.2025.101446","url":null,"abstract":"<div><div>In this study, the photoconductive properties of a Schottky photodiode with the structure Au/PVA:Graphite-Er₂O₃/n-Si are investigated both in the dark and under varying light intensities. A thin layer of the polyvinyl alcohol doped with Graphite-Er₂O₃ is placed at the metal-semiconductor interface to create an Schottky photodiode with a metal-nanocomposite-semiconductor structure. The fabrication and preparation techniques are thoroughly documented. X-ray diffraction (XRD) is used to analyze the Graphite and Er₂O₃ nanostructures. Several key photoconductive properties, such as leakage or reverse-saturation current (<em>I₀</em>), electric potential barrier height (<em>Φ</em><sub><em>B0</em></sub>), and ideality factor (<em>n</em>), series/shunt resistances (<em>R</em><sub><em>s</em></sub><em>/R</em><sub><em>sh</em></sub>), surface/interface state density distribution (N<sub>ss</sub>), photocurrent (<em>I</em><sub><em>ph</em></sub>), photosensitivity (<em>S</em>), optical responsivity (<em>R</em>), and specific detectivity (<em>D*</em>) have been determined. Increasing light intensity leads to higher <em>I₀</em> and n values, and lower <em>Φ</em><sub><em>B0</em></sub> and <em>R</em><sub><em>s</em></sub> values. When studying the illumination dependency of photocurrent, the <em>I</em><sub><em>ph</em></sub>–<em>P</em> plots at zero bias voltage exhibit a linear behavior within an acceptable range. The PVA:Graphite-Er₂O₃ nanocomposite enhances the photosensitivity of the metal-nanocomposite-semiconductor type photodiode, optical responsivity, and specific detectivity by 1120, 2.40 mA/W, and 3.13 × 10 ¹ ⁰ Jones, respectively. These results suggest that the Au/PVA:Graphite-Er₂O₃/n-Si structure exhibits a promising photoresponse and could potentially replace traditional metal-semiconductor photodiode in optoelectronic devices and photovoltaic systems.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101446"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145095204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101449
Amir Amir Mohammadi, Somayeh Makouei, Sajjad Mortazavi
Technological advancements have improved the quality of life but increased environmental pollution by releasing harmful gases such as ammonia, NOx, CO, H2S, and SO2. Accurate detection of toxic gases is crucial for human and ecosystem health, as it prevents severe health complications caused by inhaling these gases. This study introduces a PCF designed to detect harmful gases. The proposed fiber structure has a hybrid hole arrangement in the cladding. The two grid-like square inner layers are surrounded by three irregular octagonal outer layers. The core region consists of two ring layers enclosing a central air hole. Four intermediate air holes (I-Hole) are strategically positioned along the boundary between the core and cladding, which play a crucial role in fiber optical performance. The I-Holes act as reflective barriers, preventing light from escaping the core and redirecting it back into the core. The precise placement and function of these I-Holes contribute to the overall efficiency and performance of the fiber. Eventually, ultra-high relative sensitivity with ultra-low confinement loss is achieved. The proposed structure demonstrates a relative sensitivity of 88.06 ± 0.69 % and a confinement loss of 3.76 × 10−5 ± 9.95 × 10−5 dB/m with a 2.6 coefficient of variation within the 1.45μm to 1.7μm wavelength range.
{"title":"Ultra-high sensitivity and low loss: Innovative PCF simulated design featuring I-holes for harmful gas detection","authors":"Amir Amir Mohammadi, Somayeh Makouei, Sajjad Mortazavi","doi":"10.1016/j.photonics.2025.101449","DOIUrl":"10.1016/j.photonics.2025.101449","url":null,"abstract":"<div><div>Technological advancements have improved the quality of life but increased environmental pollution by releasing harmful gases such as ammonia, NO<sub>x</sub>, CO, H<sub>2</sub>S, and SO<sub>2</sub>. Accurate detection of toxic gases is crucial for human and ecosystem health, as it prevents severe health complications caused by inhaling these gases. This study introduces a PCF designed to detect harmful gases. The proposed fiber structure has a hybrid hole arrangement in the cladding. The two grid-like square inner layers are surrounded by three irregular octagonal outer layers. The core region consists of two ring layers enclosing a central air hole. Four intermediate air holes (I-Hole) are strategically positioned along the boundary between the core and cladding, which play a crucial role in fiber optical performance. The I-Holes act as reflective barriers, preventing light from escaping the core and redirecting it back into the core. The precise placement and function of these I-Holes contribute to the overall efficiency and performance of the fiber. Eventually, ultra-high relative sensitivity with ultra-low confinement loss is achieved. The proposed structure demonstrates a relative sensitivity of 88.06 ± 0.69 % and a confinement loss of 3.76 × 10<sup>−5</sup> ± 9.95 × 10<sup>−5</sup> dB/m with a 2.6 coefficient of variation within the 1.45μm to 1.7μm wavelength range.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101449"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145324203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101453
Lu Yang, Xiongwen Chen, Chang Liu, Wang Zeng, Xinwu Liu, Zihao Liu
In this paper, we theoretically investigate the Goos-Hänchen (GH) shift in an Otto configuration based on beta-phase Ga₂O₃ (bGO). The study shows that when TM-polarized light is incident, hyperbolic shear polaritons (HShPs) can induce a significant GH shift in the mid-infrared range. The significant GH shift in reflection is caused by local phase changes at the interface, which result from the excitation of HShPs. The magnitude and sign of the GH shift vary with device rotation and air gap thickness. By selecting appropriate air gap thickness and angle of incidence, a GH shift up to can be achieved near the angle of incidence where the sign changes. Utilizing the tunable GH shift, we design an anisotropic refractive index sensor, providing theoretical guidance for potential industrial applications. Furthermore, our results indicate that the tunable GH shift method based on prism coupling has significant potential applications in biosensing, beam alignment, and optical detection.
{"title":"Giant enhancement of the Goos-Hänchen shift by hyperbolic shear polaritons with beta-phase Ga2O3 in the mid-infrared spectrum","authors":"Lu Yang, Xiongwen Chen, Chang Liu, Wang Zeng, Xinwu Liu, Zihao Liu","doi":"10.1016/j.photonics.2025.101453","DOIUrl":"10.1016/j.photonics.2025.101453","url":null,"abstract":"<div><div>In this paper, we theoretically investigate the Goos-Hänchen (GH) shift in an Otto configuration based on beta-phase Ga₂O₃ (bGO). The study shows that when TM-polarized light is incident, hyperbolic shear polaritons (HShPs) can induce a significant GH shift in the mid-infrared range. The significant GH shift in reflection is caused by local phase changes at the interface, which result from the excitation of HShPs. The magnitude and sign of the GH shift vary with device rotation and air gap thickness. By selecting appropriate air gap thickness and angle of incidence, a GH shift up to <span><math><mrow><mn>2000</mn><mspace></mspace><mi>λ</mi></mrow></math></span> can be achieved near the angle of incidence where the sign changes. Utilizing the tunable GH shift, we design an anisotropic refractive index sensor, providing theoretical guidance for potential industrial applications. Furthermore, our results indicate that the tunable GH shift method based on prism coupling has significant potential applications in biosensing, beam alignment, and optical detection.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101453"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145265778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101436
Martin Rojas-Bustamante , Ruslan Azizov , Ravshanjon Nazarov , Mingzhao Song , Pavel S. Pankin , Dmitrii N. Maksimov , Sergey Makarov , Andrey Bogdanov
Bound states in the continuum (BICs) are specific resonant modes with infinite radiative quality factors that arise from a mismatch with free-space radiation through mechanisms of symmetry protection, parameter tuning, or accidental degeneracy. To harness the significant potential of BICs for light-emission applications such as LEDs and lasers, it is essential to efficiently integrate light-emitting nanomaterials with BIC-based architectures. Here, we numerically model the effect of a light-emitting capping layer on the plasmon-photonic hybrid system consisting of an aluminum substrate with a two-dimensional periodic wave-like interface to an anodic alumina photonic crystal slab. We consider CdSe/CdS nanoplatelets (NPLs) as the gain material because of their high potential for industrial applications. The proposed practical guide for compliance with the conditions for bound states formation, spectrally aligned with the photoluminescence band of the NPLs, can be further used for experimental realization in high-performance solution-processable lasers.
{"title":"Resonant mode crossing in hybrid structures for effective light-emission","authors":"Martin Rojas-Bustamante , Ruslan Azizov , Ravshanjon Nazarov , Mingzhao Song , Pavel S. Pankin , Dmitrii N. Maksimov , Sergey Makarov , Andrey Bogdanov","doi":"10.1016/j.photonics.2025.101436","DOIUrl":"10.1016/j.photonics.2025.101436","url":null,"abstract":"<div><div>Bound states in the continuum (BICs) are specific resonant modes with infinite radiative quality factors that arise from a mismatch with free-space radiation through mechanisms of symmetry protection, parameter tuning, or accidental degeneracy. To harness the significant potential of BICs for light-emission applications such as LEDs and lasers, it is essential to efficiently integrate light-emitting nanomaterials with BIC-based architectures. Here, we numerically model the effect of a light-emitting capping layer on the plasmon-photonic hybrid system consisting of an aluminum substrate with a two-dimensional periodic wave-like interface to an anodic alumina photonic crystal slab. We consider CdSe/CdS nanoplatelets (NPLs) as the gain material because of their high potential for industrial applications. The proposed practical guide for compliance with the conditions for bound states formation, spectrally aligned with the photoluminescence band of the NPLs, can be further used for experimental realization in high-performance solution-processable lasers.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101436"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144921840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101444
Yun Fang , Jian Liu , Weiyu Chen , Fangjiaming Zhao , Xue Zhang , Dandan Wang , Wanchun Yang
This paper proposes a dual-band mid-wave infrared (MWIR: 3–) and tunable broadband long-wave infrared (LWIR: 8–) perfect absorber based on embedded Ti rings and graphene. The absorber consists of a graphene top layer, dielectric layers of Si3N4, Al2O3, and Si, with four Ti rings and a cross-shaped graphene pattern embedded in the Si layer, all supported by a Ti substrate. The numerical results indicate that two near-perfect absorption peaks at 1 = (99.80%) and 2 = (99.53%) within the MWIR range. Broadband absorption exceeding 90% is achieved across 6.67—, with an average absorption of 96.3% over the LWIR window. The broadband performance originates from synergistic Fabry-Pérot(F-P) resonances in the multilayer dielectric stack and surface plasmon resonances (SPR) enabled by the Ti and graphene hybrid configuration, which endows the proposed structure with a broader bandwidth and superior absorption capability compared to previously reported designs. With advantages including broadband operation, high absorption, and high stability, the proposed absorber holds significant potential for infrared thermal imaging, infrared stealth and detection.
{"title":"Dual-band MWIR and broadband LWIR perfect absorber based on graphene and Ti rings embedded structure","authors":"Yun Fang , Jian Liu , Weiyu Chen , Fangjiaming Zhao , Xue Zhang , Dandan Wang , Wanchun Yang","doi":"10.1016/j.photonics.2025.101444","DOIUrl":"10.1016/j.photonics.2025.101444","url":null,"abstract":"<div><div>This paper proposes a dual-band mid-wave infrared (MWIR: 3–<span><math><mrow><mn>5</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>) and tunable broadband long-wave infrared (LWIR: 8–<span><math><mrow><mn>14</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>) perfect absorber based on embedded Ti rings and graphene. The absorber consists of a graphene top layer, dielectric layers of Si<sub>3</sub>N<sub>4</sub>, Al<sub>2</sub>O<sub>3</sub>, and Si, with four Ti rings and a cross-shaped graphene pattern embedded in the Si layer, all supported by a Ti substrate. The numerical results indicate that two near-perfect absorption peaks at <span><math><mi>λ</mi></math></span> <sub>1</sub> = <span><math><mrow><mn>3</mn><mo>.</mo><mn>23</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> (99.80%) and <span><math><mi>λ</mi></math></span> <sub>2</sub> = <span><math><mrow><mn>4</mn><mo>.</mo><mn>13</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> (99.53%) within the MWIR range. Broadband absorption exceeding 90% is achieved across 6.67—<span><math><mrow><mn>14</mn><mo>.</mo><mn>17</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>, with an average absorption of 96.3% over the LWIR window. The broadband performance originates from synergistic Fabry-Pérot(F-P) resonances in the multilayer dielectric stack and surface plasmon resonances (SPR) enabled by the Ti and graphene hybrid configuration, which endows the proposed structure with a broader bandwidth and superior absorption capability compared to previously reported designs. With advantages including broadband operation, high absorption, and high stability, the proposed absorber holds significant potential for infrared thermal imaging, infrared stealth and detection.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101444"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145095205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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