Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101444
Yun Fang , Jian Liu , Weiyu Chen , Fangjiaming Zhao , Xue Zhang , Dandan Wang , Wanchun Yang
This paper proposes a dual-band mid-wave infrared (MWIR: 3–) and tunable broadband long-wave infrared (LWIR: 8–) perfect absorber based on embedded Ti rings and graphene. The absorber consists of a graphene top layer, dielectric layers of Si3N4, Al2O3, and Si, with four Ti rings and a cross-shaped graphene pattern embedded in the Si layer, all supported by a Ti substrate. The numerical results indicate that two near-perfect absorption peaks at 1 = (99.80%) and 2 = (99.53%) within the MWIR range. Broadband absorption exceeding 90% is achieved across 6.67—, with an average absorption of 96.3% over the LWIR window. The broadband performance originates from synergistic Fabry-Pérot(F-P) resonances in the multilayer dielectric stack and surface plasmon resonances (SPR) enabled by the Ti and graphene hybrid configuration, which endows the proposed structure with a broader bandwidth and superior absorption capability compared to previously reported designs. With advantages including broadband operation, high absorption, and high stability, the proposed absorber holds significant potential for infrared thermal imaging, infrared stealth and detection.
{"title":"Dual-band MWIR and broadband LWIR perfect absorber based on graphene and Ti rings embedded structure","authors":"Yun Fang , Jian Liu , Weiyu Chen , Fangjiaming Zhao , Xue Zhang , Dandan Wang , Wanchun Yang","doi":"10.1016/j.photonics.2025.101444","DOIUrl":"10.1016/j.photonics.2025.101444","url":null,"abstract":"<div><div>This paper proposes a dual-band mid-wave infrared (MWIR: 3–<span><math><mrow><mn>5</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>) and tunable broadband long-wave infrared (LWIR: 8–<span><math><mrow><mn>14</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>) perfect absorber based on embedded Ti rings and graphene. The absorber consists of a graphene top layer, dielectric layers of Si<sub>3</sub>N<sub>4</sub>, Al<sub>2</sub>O<sub>3</sub>, and Si, with four Ti rings and a cross-shaped graphene pattern embedded in the Si layer, all supported by a Ti substrate. The numerical results indicate that two near-perfect absorption peaks at <span><math><mi>λ</mi></math></span> <sub>1</sub> = <span><math><mrow><mn>3</mn><mo>.</mo><mn>23</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> (99.80%) and <span><math><mi>λ</mi></math></span> <sub>2</sub> = <span><math><mrow><mn>4</mn><mo>.</mo><mn>13</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> (99.53%) within the MWIR range. Broadband absorption exceeding 90% is achieved across 6.67—<span><math><mrow><mn>14</mn><mo>.</mo><mn>17</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>, with an average absorption of 96.3% over the LWIR window. The broadband performance originates from synergistic Fabry-Pérot(F-P) resonances in the multilayer dielectric stack and surface plasmon resonances (SPR) enabled by the Ti and graphene hybrid configuration, which endows the proposed structure with a broader bandwidth and superior absorption capability compared to previously reported designs. With advantages including broadband operation, high absorption, and high stability, the proposed absorber holds significant potential for infrared thermal imaging, infrared stealth and detection.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101444"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145095205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101454
Md Raihan , Md Mohiuddin Soliman , Mahamudur Rahman , Abdul Kader Zilani , Abdulmajeed M. Alenezi , Mohamad A. Alawad , Mohammad Tariqul Islam
Harnessing solar energy efficiently requires advanced absorber designs. Traditional solar absorbers often suffer from low efficiency and limited spectral response. In contrast, metamaterial absorbers (MSAs) offer high absorption efficiency across a broad spectral range. This study presents a polarisation-insensitive metamaterial absorber capable of harvesting solar energy from the ultraviolet (UV) to near-infrared (NIR) range (360–3750 nm). Nanostructured materials, especially SiO2 and nickel, allow the suggested absorber to absorb 97 % of solar radiation. This average absorption refers to the unweighted arithmetic average of the absorption spectrum over the range 360–3750 nm. The absorber exhibits a consistently low polarization conversion ratio (PCR), reinforcing its effectiveness as a perfect absorber across all polarization states. The absorption is analyzed by the interference theory model (ITM), and the ADS-simulated equivalent circuit models confirmed the metasurface's absorption properties. Localized surface plasmon resonance (LSPR) is stronger at lower wavelengths in electric and magnetic fields, creating E and H resonances and wave absorption. The E and H fields of the proposed metasurface show that the propagated surface plasmon resonance (LSPR) is stronger at higher wavelengths. The suggested design has an over 95 % mean absorption up to 1573 K. Due to its high thermal stability and broadband efficiency, this metamaterial absorber holds promise for applications such as solar sails in space exploration and advanced photovoltaic devices.
{"title":"Nanostructured star symmetric metasurface absorber for solar and optical applications: Attaining close-complete absorption from ultraviolet to near-infrared a numerical approach","authors":"Md Raihan , Md Mohiuddin Soliman , Mahamudur Rahman , Abdul Kader Zilani , Abdulmajeed M. Alenezi , Mohamad A. Alawad , Mohammad Tariqul Islam","doi":"10.1016/j.photonics.2025.101454","DOIUrl":"10.1016/j.photonics.2025.101454","url":null,"abstract":"<div><div>Harnessing solar energy efficiently requires advanced absorber designs. Traditional solar absorbers often suffer from low efficiency and limited spectral response. In contrast, metamaterial absorbers (MSAs) offer high absorption efficiency across a broad spectral range. This study presents a polarisation-insensitive metamaterial absorber capable of harvesting solar energy from the ultraviolet (UV) to near-infrared (NIR) range (360–3750 nm). Nanostructured materials, especially SiO2 and nickel, allow the suggested absorber to absorb 97 % of solar radiation. This average absorption refers to the unweighted arithmetic average of the absorption spectrum over the range 360–3750 nm. The absorber exhibits a consistently low polarization conversion ratio (PCR), reinforcing its effectiveness as a perfect absorber across all polarization states. The absorption is analyzed by the interference theory model (ITM), and the ADS-simulated equivalent circuit models confirmed the metasurface's absorption properties. Localized surface plasmon resonance (LSPR) is stronger at lower wavelengths in electric and magnetic fields, creating E and H resonances and wave absorption. The E and H fields of the proposed metasurface show that the propagated surface plasmon resonance (LSPR) is stronger at higher wavelengths. The suggested design has an over 95 % mean absorption up to 1573 K. Due to its high thermal stability and broadband efficiency, this metamaterial absorber holds promise for applications such as solar sails in space exploration and advanced photovoltaic devices.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101454"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145324204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A hot spot is an extremely enhanced electromagnetic field, usually arising in subwavelength gaps between metallic or dielectric particles located on a dielectric substrate. We propose an alternative method that results in the formation of hot spot combs with an engineered intensity distribution along the comb. In a square dielectric plate, a plane electromagnetic wave excites Fabry–Pérot-type modes with a variable number of half-waves along the length of the plate. As a result, combs of spatially equidistant hot spots are generated in a subwavelength gap located along the centerline of the plate. The dependences of the hot spot number and intensity on the exciting wave frequency, plate permittivity, and slit size and shape are investigated. The electromagnetic field enhancement factors were calculated for amorphous chalcogenide Ge2Sb2Te5 in the infrared region and for dielectric ceramic (CaLa)(AlTi)O3 in the microwave region.
{"title":"Equidistant in space tunable combs of hot and cold spots in infrared and microwave ranges","authors":"A.P. Chetverikova , K.B. Samusev , K.A. Bronnikov , M.F. Limonov","doi":"10.1016/j.photonics.2025.101456","DOIUrl":"10.1016/j.photonics.2025.101456","url":null,"abstract":"<div><div>A hot spot is an extremely enhanced electromagnetic field, usually arising in subwavelength gaps between metallic or dielectric particles located on a dielectric substrate. We propose an alternative method that results in the formation of hot spot combs with an engineered intensity distribution along the comb. In a square dielectric plate, a plane electromagnetic wave excites Fabry–Pérot-type modes with a variable number of half-waves along the length of the plate. As a result, combs of spatially equidistant hot spots are generated in a subwavelength gap located along the centerline of the plate. The dependences of the hot spot number and intensity on the exciting wave frequency, plate permittivity, and slit size and shape are investigated. The electromagnetic field enhancement factors were calculated for amorphous chalcogenide Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> in the infrared region and for dielectric ceramic (Ca<span><math><msub><mrow></mrow><mrow><mn>0</mn><mo>,</mo><mn>67</mn></mrow></msub></math></span>La<span><math><msub><mrow></mrow><mrow><mn>0</mn><mo>,</mo><mn>33</mn></mrow></msub></math></span>)(Al<span><math><msub><mrow></mrow><mrow><mn>0</mn><mo>,</mo><mn>33</mn></mrow></msub></math></span>Ti<span><math><msub><mrow></mrow><mrow><mn>0</mn><mo>,</mo><mn>67</mn></mrow></msub></math></span>)O<sub>3</sub> in the microwave region.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101456"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145324533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101448
Wenqiang Shi , Hengli Feng , Lan Zhang , Xiuyu Zhao , Junming Li , Hongyan Meng , Yang Jia , Yachen Gao
Vanadium dioxide (VO2), a prototypical phase-change material, endows terahertz waves with dynamic tunability through its insulator–metal transition. Here we demonstrate a reconfigurable metasurface that exploits VO2’s dramatic optical switching capability. Based on VO2, we designed a reflective metasurface which possesses switchable characteristics and can realize several functions including generation of vortex beams, split vortex beams, split vortex beams with focused orbital angular momentum (FOAM), and multi-channel FOAM. Specifically, the paper discusses vortex beams with topological charges l = 1 and l = 2, phase distributions for two-way and four-way splitting, as well as split vortex beams with l = 2, which enhance the capacity for information transmission. A high-purity FOAM function with a focal length of 6000 μm is achieved at a frequency of 0.39 THz. Finally, by combining the FOAM metasurface with split-phase superposition, multi-channel FOAM beams is successfully realized. When linearly polarized waves (LP) are incident on the split FOAM metasurface, the far-field amplitude exhibits four energy channels. In the circumstance of left circularly polarized (LCP) and right circularly polarized (RCP) waves being incident separately, the phase amplitude distribution is oriented towards the negative y-axis and the positive y-axis, respectively, thereby reflecting the transmission of wave in disparate directions. Furthermore, when VO2 switches to dielectric state, the reflection behavior of the metasurface transitions to specular reflection. The novelty of our approach lies in the dynamic and multifunctional integration of these distinct manipulation capabilities onto a single, reconfigurable platform. By harnessing the phase transition of VO2, we demonstrate on-demand switching among the operational modes—an advance beyond conventional static metasurfaces. Vortex beams, split vortex beams, FOAM effects, and split FOAM provide diverse means for light-field control and open new possibilities for designing highly tunable, precisely controlled optical devices.
{"title":"Multifunctional vortex fields manipulation enabled based on vanadium dioxide metasurfaces","authors":"Wenqiang Shi , Hengli Feng , Lan Zhang , Xiuyu Zhao , Junming Li , Hongyan Meng , Yang Jia , Yachen Gao","doi":"10.1016/j.photonics.2025.101448","DOIUrl":"10.1016/j.photonics.2025.101448","url":null,"abstract":"<div><div>Vanadium dioxide (VO<sub>2</sub>), a prototypical phase-change material, endows terahertz waves with dynamic tunability through its insulator–metal transition. Here we demonstrate a reconfigurable metasurface that exploits VO<sub>2</sub>’s dramatic optical switching capability. Based on VO<sub>2</sub>, we designed a reflective metasurface which possesses switchable characteristics and can realize several functions including generation of vortex beams, split vortex beams, split vortex beams with focused orbital angular momentum (FOAM), and multi-channel FOAM. Specifically, the paper discusses vortex beams with topological charges <em>l</em> = 1 and <em>l</em> = 2, phase distributions for two-way and four-way splitting, as well as split vortex beams with <em>l</em> = 2, which enhance the capacity for information transmission. A high-purity FOAM function with a focal length of 6000 μm is achieved at a frequency of 0.39 THz. Finally, by combining the FOAM metasurface with split-phase superposition, multi-channel FOAM beams is successfully realized. When linearly polarized waves (LP) are incident on the split FOAM metasurface, the far-field amplitude exhibits four energy channels. In the circumstance of left circularly polarized (LCP) and right circularly polarized (RCP) waves being incident separately, the phase amplitude distribution is oriented towards the negative <em>y</em>-axis and the positive <em>y</em>-axis, respectively, thereby reflecting the transmission of wave in disparate directions. Furthermore, when VO<sub>2</sub> switches to dielectric state, the reflection behavior of the metasurface transitions to specular reflection. The novelty of our approach lies in the dynamic and multifunctional integration of these distinct manipulation capabilities onto a single, reconfigurable platform. By harnessing the phase transition of VO<sub>2</sub>, we demonstrate on-demand switching among the operational modes—an advance beyond conventional static metasurfaces. Vortex beams, split vortex beams, FOAM effects, and split FOAM provide diverse means for light-field control and open new possibilities for designing highly tunable, precisely controlled optical devices.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101448"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145265779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101450
Sajid Ullah , Kaifeng Li , Hailiang Chen, Shuguang Li
In this paper, an experimental study using NCF and MOF-based sensors was conducted for simultaneous measurement of refractive index (RI) and temperature (T) detection. The magnetron sputtering machine was used for metal coatings where thickness was controlled by sputtering time. The RI sensing section uses only Ag film for both NCF and MOF-based sensors. For temperature sensing, NCF was coated with a composite of Ag and PDMS, and MOF uses copper (Cu), Ag and PDMS in sensing probes. Upon testing for the final sensor fabrication, an optimum length of 2.0 cm was used as sensing probes for both sensors. An NCF-based sensor demonstrated a wide detection range for simultaneous RI and T measurements of 1.333–1.381 RI and 0–70 °C, with RI and temperature sensitivities of 4000 nm/RIU and 3.5 nm/°C, respectively. The MOF-based sensor has further enhanced detection ranges to 1.333–1.399 RI and 0–100 °C, with maximum RI and temperature sensitivities of 5333.3 nm/RIU and 6.5 nm/°C, respectively in simultaneous RI and T measurements. At last, a dual-parameter stability test was conducted and it was found that both sensors faced negligible error variation upon repeated experiments. Featuring good stability, high sensitivity, and easy fabrication, our proposed sensors are expected to have a wide range of applications in biochemical sensing.
{"title":"Experimental study on simultaneous detection of dual parameters of refractive index and temperature based on NCF and MOF sensors","authors":"Sajid Ullah , Kaifeng Li , Hailiang Chen, Shuguang Li","doi":"10.1016/j.photonics.2025.101450","DOIUrl":"10.1016/j.photonics.2025.101450","url":null,"abstract":"<div><div>In this paper, an experimental study using NCF and MOF-based sensors was conducted for simultaneous measurement of refractive index (<em>RI</em>) and temperature (<em>T</em>) detection. The magnetron sputtering machine was used for metal coatings where thickness was controlled by sputtering time. The <em>RI</em> sensing section uses only Ag film for both NCF and MOF-based sensors. For temperature sensing, NCF was coated with a composite of Ag and PDMS, and MOF uses copper (Cu), Ag and PDMS in sensing probes. Upon testing for the final sensor fabrication, an optimum length of 2.0 cm was used as sensing probes for both sensors. An NCF-based sensor demonstrated a wide detection range for simultaneous <em>RI</em> and <em>T</em> measurements of 1.333–1.381 RI and 0–70 °C, with <em>RI</em> and temperature sensitivities of 4000 nm/RIU and 3.5 nm/°C, respectively. The MOF-based sensor has further enhanced detection ranges to 1.333–1.399 <em>RI</em> and 0–100 °C, with maximum <em>RI</em> and temperature sensitivities of 5333.3 nm/RIU and 6.5 nm/°C, respectively in simultaneous <em>RI</em> and <em>T</em> measurements. At last, a dual-parameter stability test was conducted and it was found that both sensors faced negligible error variation upon repeated experiments. Featuring good stability, high sensitivity, and easy fabrication, our proposed sensors are expected to have a wide range of applications in biochemical sensing.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101450"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145324205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101447
Israel Alves Oliveira , Vitaly Felix Rodriguez-Esquerre , Igor Leonardo Gomes de Souza
Phase change materials (PCMs) like GeTe have become essential in reconfigurable nanophotonic devices due to their ability to undergo reversible structural transitions between amorphous and crystalline states, which lead to significant, tunable changes in optical properties. This tunability allows for dynamic control over light-matter interactions, making PCMs ideal for optical switches, modulators, and adaptive photonic systems. In this study, we propose a reconfigurable narrowband-to-broadband absorber based on planar GeTe structures integrated with GaAs layers and a Silicon and a gold thin-film substrate, which we designed and analyzed numerically by the Finite Element Method (FEM). Our design leverages the contrasting behaviors of GeTe: the amorphous phase enables narrowband absorption, while the crystalline phase broadens the absorption spectrum to cover the range from 1150 to 1750 nm. The influence of material thickness was also assessed to evaluate manufacturing error tolerances, allowing for a more precise selection of the desired configuration. The effects of oblique incidence angles on Transversal Electric (TE) and Transversal Magnetic (TM) polarized waves were analyzed for both cases. Additionally, the physical mechanisms of field coupling were investigated.
{"title":"Reconfigurable narrowband-to-broadband absorber featuring GeTe’s phase change planar structures","authors":"Israel Alves Oliveira , Vitaly Felix Rodriguez-Esquerre , Igor Leonardo Gomes de Souza","doi":"10.1016/j.photonics.2025.101447","DOIUrl":"10.1016/j.photonics.2025.101447","url":null,"abstract":"<div><div>Phase change materials (PCMs) like GeTe have become essential in reconfigurable nanophotonic devices due to their ability to undergo reversible structural transitions between amorphous and crystalline states, which lead to significant, tunable changes in optical properties. This tunability allows for dynamic control over light-matter interactions, making PCMs ideal for optical switches, modulators, and adaptive photonic systems. In this study, we propose a reconfigurable narrowband-to-broadband absorber based on planar GeTe structures integrated with GaAs layers and a Silicon and a gold thin-film substrate, which we designed and analyzed numerically by the Finite Element Method (FEM). Our design leverages the contrasting behaviors of GeTe: the amorphous phase enables narrowband absorption, while the crystalline phase broadens the absorption spectrum to cover the range from 1150 to 1750 nm. The influence of material thickness was also assessed to evaluate manufacturing error tolerances, allowing for a more precise selection of the desired configuration. The effects of oblique incidence angles on Transversal Electric (TE) and Transversal Magnetic (TM) polarized waves were analyzed for both cases. Additionally, the physical mechanisms of field coupling were investigated.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101447"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101452
Kenan Cicek
A compact and CMOScompatible polarization rotator (PR) based on silicononinsulator (SOI) platform is proposed for high performance and polarizationdiverse photonic integrated circuit (PIC) applications. The proposed device is numerically investigated using the FDTD method. With a footprint of only 1.2 , the rotator achieves a polarization conversion efficiency (PCE) greater than 96%, a polarization conversion loss (PCL) below 0.18 dB, and an extinction ratio (ER) of 16.7 dB across a 150 nm bandwidth (1.45), covering the S, C, and part of the L bands. At the telecom wavelength of 1550 nm, the performance further improves, reaching a PCE of 98.7%, a PCL of 0.054 dB, and an ER of 20 dB. These results highlight the potential of the proposed design as a promising candidate for compact and efficient polarization control in future PICbased systems.
{"title":"Compact SOI polarization rotator for next−gen polarization−diverse PICs","authors":"Kenan Cicek","doi":"10.1016/j.photonics.2025.101452","DOIUrl":"10.1016/j.photonics.2025.101452","url":null,"abstract":"<div><div>A compact and CMOS<span><math><mo>−</mo></math></span>compatible polarization rotator (PR) based on silicon<span><math><mo>−</mo></math></span>on<span><math><mo>−</mo></math></span>insulator (SOI) platform is proposed for high performance and polarization<span><math><mo>−</mo></math></span>diverse photonic integrated circuit (PIC) applications. The proposed device is numerically investigated using the FDTD method. With a footprint of only 1.2<span><math><mrow><mo>×</mo><mn>29</mn><mo>.</mo><mn>5</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> <span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>, the rotator achieves a polarization conversion efficiency (PCE) greater than 96%, a polarization conversion loss (PCL) below 0.18 dB, and an extinction ratio (ER) of 16.7 dB across a 150 nm bandwidth (1.45<span><math><mrow><mo>−</mo><mn>1</mn><mo>.</mo><mn>6</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>), covering the S, C, and part of the L bands. At the telecom wavelength of 1550 nm, the performance further improves, reaching a PCE of 98.7%, a PCL of 0.054 dB, and an ER of 20 dB. These results highlight the potential of the proposed design as a promising candidate for compact and efficient polarization control in future PIC<span><math><mo>−</mo></math></span>based systems.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101452"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145324207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-01DOI: 10.1016/j.photonics.2025.101455
Shouzhi Zhao , Nanrun Zhou , Cuicui Lu , Huiqin Wang , Zijing Zhang , Haoji Yang
Wavelength routers (WRs) are important in on-chip photonic integrated circuits. A modified sequential quadratic programming (MSQP) inverse design method is proposed to design multi-shape WRs. In this method, fabrication constraints are considered by quoting projection functions, while the finite element method (FEM) is used for optical field simulation during the iterative optimization process. By the MSQP method, the 10-channel hexagonal, square, and circular WRs are designed with footprints of 3.74 μm2, 4.00 μm2, and 4.52 μm2, respectively. Their average transmission efficiencies are 81.0 %, 77.4 %, and 76.4 % in the 1070–1600 nm, 1070–1620 nm, and 1070–1620 nm bands, respectively. Additionally, 11- and 12-channel square WRs are designed with footprints of 4.00 μm2. Their average transmission efficiencies are 75.6 % and 72.0 %, within the 1070–1690 nm and 1070–1640 nm bands. Furthermore, the fabrication tolerances of the hexagonal WR are analyzed. The results show that it has the tolerant capabilities of a silicon layer thickness variation of ±50 nm, an etching line width deviation of ±10 nm, an edge roughness of 1–10 nm, and a misalignment of 20 nm. This study provides new ideas for the design of ultra-compact integrated devices and lays the foundation for high-volume optical computing.
{"title":"Inverse-designed ultra-compact hexagonal/square/circular silicon on-chip wavelength routers","authors":"Shouzhi Zhao , Nanrun Zhou , Cuicui Lu , Huiqin Wang , Zijing Zhang , Haoji Yang","doi":"10.1016/j.photonics.2025.101455","DOIUrl":"10.1016/j.photonics.2025.101455","url":null,"abstract":"<div><div>Wavelength routers (WRs) are important in on-chip photonic integrated circuits. A modified sequential quadratic programming (MSQP) inverse design method is proposed to design multi-shape WRs. In this method, fabrication constraints are considered by quoting projection functions, while the finite element method (FEM) is used for optical field simulation during the iterative optimization process. By the MSQP method, the 10-channel hexagonal, square, and circular WRs are designed with footprints of 3.74 μm<sup>2</sup>, 4.00 μm<sup>2</sup>, and 4.52 μm<sup>2</sup>, respectively. Their average transmission efficiencies are 81.0 %, 77.4 %, and 76.4 % in the 1070–1600 nm, 1070–1620 nm, and 1070–1620 nm bands, respectively. Additionally, 11- and 12-channel square WRs are designed with footprints of 4.00 μm<sup>2</sup>. Their average transmission efficiencies are 75.6 % and 72.0 %, within the 1070–1690 nm and 1070–1640 nm bands. Furthermore, the fabrication tolerances of the hexagonal W<em>R</em> are analyzed. The results show that it has the tolerant capabilities of a silicon layer thickness variation of ±50 nm, an etching line width deviation of ±10 nm, an edge roughness of 1–10 nm, and a misalignment of 20 nm. This study provides new ideas for the design of ultra-compact integrated devices and lays the foundation for high-volume optical computing.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101455"},"PeriodicalIF":2.9,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145324534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-19DOI: 10.1016/j.photonics.2025.101435
Hanbo Shao, XiaoChen Hang, Dong Jiang
We propose a two-dimensional GaAs-SU8-Based (SU8 photoresist is a high-contrast epoxy negative photoresist) phoxonic crystal to simultaneously exhibit topological characteristic of electromagnetic and elastic waves. By rotating the angle of SU8 holes with respect to the center of the regular hexagon, diarc cone degeneracy occurs at both photonic and phononic bandgap, accompanied by band flipping. Further, the topological transmission and robustness is verified by design three different interface channels with a 30°/-30° flip. We investigate the Q factor of both mechanics and optics in this topological system, when the ratio n = 0.2 (radius r to the lattice constant a) and a= 340μm, Qphotonic and Qphononic achieve highest, equal to 6432 and 2508, respectively. At this time, the mechanics-optics coupling in the phoxonic cavity reaches its maximum, gmb= 1024 Hz, gpe= 75.2 Hz and g= 1099.2 Hz. (gmb means the moving interface effect; gpe means the photoelastic effect, and g means the The mechanics-optics coupling coefficient) The propose PxCs realize highly topologically protected and robust characteristics with the effect of maintaining high optical force coupling rate. Providing a model reference for the design of mechanic-optic functional devices such as liquid concentration sensor, mass sensor and micro-displacement sensor.
{"title":"Topological properties in a GaAs-SU8-Based phoxonic crystal with high Q factor and mechanics-optics coupling coefficient","authors":"Hanbo Shao, XiaoChen Hang, Dong Jiang","doi":"10.1016/j.photonics.2025.101435","DOIUrl":"10.1016/j.photonics.2025.101435","url":null,"abstract":"<div><div>We propose a two-dimensional GaAs-SU8-Based (SU8 photoresist is a high-contrast epoxy negative photoresist) phoxonic crystal to simultaneously exhibit topological characteristic of electromagnetic and elastic waves. By rotating the angle of SU8 holes with respect to the center of the regular hexagon, diarc cone degeneracy occurs at both photonic and phononic bandgap, accompanied by band flipping. Further, the topological transmission and robustness is verified by design three different interface channels with a 30°/-30° flip. We investigate the <em>Q</em> factor of both mechanics and optics in this topological system, when the ratio n = 0.2 (radius r to the lattice constant a) and a= 340μm, <em>Q</em><sub>photonic</sub> and <em>Q</em><sub>phononic</sub> achieve highest, equal to 6432 and 2508, respectively. At this time, the mechanics-optics coupling in the phoxonic cavity reaches its maximum, g<sub>mb</sub>= 1024 Hz, g<sub>pe</sub>= 75.2 Hz and g= 1099.2 Hz. (g<sub>mb</sub> means the moving interface effect; g<sub>pe</sub> means the photoelastic effect, and g means the The mechanics-optics coupling coefficient) The propose PxCs realize highly topologically protected and robust characteristics with the effect of maintaining high optical force coupling rate. Providing a model reference for the design of mechanic-optic functional devices such as liquid concentration sensor, mass sensor and micro-displacement sensor.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101435"},"PeriodicalIF":2.9,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144890584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-08DOI: 10.1016/j.photonics.2025.101432
Zhanqing He , Yanlong Du , Xin Tan , Jiachang Li , Lei Cang , Tianning Pang , Hui Qi
The nitrogen-vacancy (NV) color centers in diamond, recognized as the most prevalent defect centers, are extensively utilized in fields such as quantum communication and quantum sensing. However, the high reflectance at the diamond-air interface results in low fluorescence collection efficiency of NV color centers. To address this challenge, this paper proposes the deposition of an anti-reflection gradient refractive index diamond-like coating (DLC) on the diamond substrate to enhance light transmittance and, consequently, improve the fluorescence collection from the NV color centers. By employing the finite-difference time-domain method in conjunction with a gradient refractive index distribution, we simulate the number of DLC layers and their thickness to assess the effects of the anti-reflection coating on transmittance, reflectance, and emission efficiency of the NV color centers within the diamond substrate. This analysis elucidates the mechanisms by which the anti-reflection coating enhances fluorescence collection in the NV color centers. Furthermore, we prepared the diamond substrate using the microwave plasma chemical vapor deposition method and applied the anti-reflection coating via the magnetron sputtering technique. Testing demonstrated that with the addition of the anti-reflection coating, reflectivity was reduced to a mere 1.7 %, reduce by about 1/10 lower than without the coating. Additionally, following the deposition of the anti-reflective coating, the fluorescence collection of the NV0 and NV- color centers was significantly enhanced, with the fluorescence collection of the NV0 color centers increasing by 1.7 times and that of the NV- color centers increasing by 1.9 times.
{"title":"Study on fluorescence collection enhancement of NV color centers in diamond by anti-reflection gradient refractive index diamond-like coatings","authors":"Zhanqing He , Yanlong Du , Xin Tan , Jiachang Li , Lei Cang , Tianning Pang , Hui Qi","doi":"10.1016/j.photonics.2025.101432","DOIUrl":"10.1016/j.photonics.2025.101432","url":null,"abstract":"<div><div>The nitrogen-vacancy (NV) color centers in diamond, recognized as the most prevalent defect centers, are extensively utilized in fields such as quantum communication and quantum sensing. However, the high reflectance at the diamond-air interface results in low fluorescence collection efficiency of NV color centers. To address this challenge, this paper proposes the deposition of an anti-reflection gradient refractive index diamond-like coating (DLC) on the diamond substrate to enhance light transmittance and, consequently, improve the fluorescence collection from the NV color centers. By employing the finite-difference time-domain method in conjunction with a gradient refractive index distribution, we simulate the number of DLC layers and their thickness to assess the effects of the anti-reflection coating on transmittance, reflectance, and emission efficiency of the NV color centers within the diamond substrate. This analysis elucidates the mechanisms by which the anti-reflection coating enhances fluorescence collection in the NV color centers. Furthermore, we prepared the diamond substrate using the microwave plasma chemical vapor deposition method and applied the anti-reflection coating via the magnetron sputtering technique. Testing demonstrated that with the addition of the anti-reflection coating, reflectivity was reduced to a mere 1.7 %, reduce by about 1/10 lower than without the coating. Additionally, following the deposition of the anti-reflective coating, the fluorescence collection of the NV<sup>0</sup> and NV<sup>-</sup> color centers was significantly enhanced, with the fluorescence collection of the NV<sup>0</sup> color centers increasing by 1.7 times and that of the NV<sup>-</sup> color centers increasing by 1.9 times.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":"66 ","pages":"Article 101432"},"PeriodicalIF":2.9,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144886269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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