Pub Date : 2025-11-24DOI: 10.1016/j.aeue.2025.156145
Nivetha T. , Bindu B. , Noor Ain Kamsani
The neuromorphic computation has gained attention over traditional computing techniques due to its low power consumption, real-time processing and adaptability. The spiking neural networks (SNN) are event-based which process information as spikes to provide high energy efficiency and fast computation. In this article, a novel SNN with CMOS neuron and resistive random access memory (RRAM) synapses is implemented for pattern recognition. The RRAM synapses exhibit synaptic plasticity suitable for in-memory computations. A computationally efficient CMOS based leaky integrate and fire (LIF) neuron model is implemented to handle the data-driven applications effectively. The SNN contains the forward and feedback mode operation. In the forward mode, the input pre-spikes with ON-bit and OFF-bit frequencies corresponding to the binary pixel intensities of the image are applied to the RRAM synaptic array. The CMOS LIF neuron integrate these spikes from synapses and produce the post-spikes. In the feedback mode, these post-spikes are given to the sense line and the synaptic weights get modified using spike time-dependent plasticity (STDP) learning mechanism. The proposed SNN circuit is used for training and recognizing the alphabets/digits in using 25 1T-1R RRAM synapses and a single output CMOS LIF neuron.
{"title":"Spiking neural network with 1T-1R RRAM synapses and CMOS LIF neurons for in-situ learning and pattern recognition","authors":"Nivetha T. , Bindu B. , Noor Ain Kamsani","doi":"10.1016/j.aeue.2025.156145","DOIUrl":"10.1016/j.aeue.2025.156145","url":null,"abstract":"<div><div>The neuromorphic computation has gained attention over traditional computing techniques due to its low power consumption, real-time processing and adaptability. The spiking neural networks (SNN) are event-based which process information as spikes to provide high energy efficiency and fast computation. In this article, a novel SNN with CMOS neuron and resistive random access memory (RRAM) synapses is implemented for pattern recognition. The RRAM synapses exhibit synaptic plasticity suitable for in-memory computations. A computationally efficient CMOS based leaky integrate and fire (LIF) neuron model is implemented to handle the data-driven applications effectively. The SNN contains the forward and feedback mode operation. In the forward mode, the input pre-spikes with ON-bit and OFF-bit frequencies corresponding to the binary pixel intensities of the image are applied to the RRAM synaptic array. The CMOS LIF neuron integrate these spikes from synapses and produce the post-spikes. In the feedback mode, these post-spikes are given to the sense line and the synaptic weights get modified using spike time-dependent plasticity (STDP) learning mechanism. The proposed SNN circuit is used for training and recognizing the alphabets/digits in <span><math><mrow><mn>500</mn><mspace></mspace><mi>μ</mi><mi>s</mi></mrow></math></span> using 25 1T-1R RRAM synapses and a single output CMOS LIF neuron.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"205 ","pages":"Article 156145"},"PeriodicalIF":3.2,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145617912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wireless communications, aimed at facilitating the transmission and reception of information, play an essential role in many fields. However, due to the broadcasting nature of such communications, current wireless networks are highly vulnerable to interference signals. In contrast to state-of-the-art techniques, we employ a hybrid ambient backscatter communication and CNN-LSTM based detector to handle interference effectively. Unlike the usual methods that consider interference signal as destructive interference, the proposed method uses the signal interference opportunistically as the carrier for data transmission. Conventional backscatter communication passively reflects ambient RF signals, whereas the proposed transceiver actively re-modulates the interference signal by applying varying amplification factors through a programmable gain amplifier (PGA). However, the requirement for accurate channel state information (CSI) and prior knowledge of the interference signal distribution can lead to elevated bit error rates (BER) in anti-interference systems, especially under dynamic or unpredictable channel conditions. Therefore, a deep learning network was employed, in which the CNN layers extract features from the relationships between adjacent measured values, and the LSTM network learns long-term dependencies within the input data. The proposed detector can dynamically adapt to any channel and noise distribution. We analyze the effects of various parameters on the performance of the anti-interference system, such as the interfering power, the Relative Channel Difference (RCD), and the number of antennas. The simulation results show that higher interfering power can achieve better BER at the receiver.
{"title":"Anti-Interference wireless communication using backscatter and deep learning: modeling, detection, and evaluation","authors":"Hossein Eshaghi, Hamid Reza Khodadadi, Hamed Ahmadian Yazdi","doi":"10.1016/j.aeue.2025.156138","DOIUrl":"10.1016/j.aeue.2025.156138","url":null,"abstract":"<div><div>Wireless communications, aimed at facilitating the transmission and reception of information, play an essential role in many fields. However, due to the broadcasting nature of such communications, current wireless networks are highly vulnerable to interference signals. In contrast to state-of-the-art techniques, we employ a hybrid ambient backscatter communication and CNN-LSTM based detector to handle interference effectively. Unlike the usual methods that consider interference signal as destructive interference, the proposed method uses the signal interference opportunistically as the carrier for data transmission. Conventional backscatter communication passively reflects ambient RF signals, whereas the proposed transceiver actively re-modulates the interference signal by applying varying amplification factors through a programmable gain amplifier (PGA). However, the requirement for accurate channel state information (CSI) and prior knowledge of the interference signal distribution can lead to elevated bit error rates (BER) in anti-interference systems, especially under dynamic or unpredictable channel conditions. Therefore, a deep learning network was employed, in which the CNN layers extract features from the relationships between adjacent measured values, and the LSTM network learns long-term dependencies within the input data. The proposed detector can dynamically adapt to any channel and noise distribution. We analyze the effects of various parameters on the performance of the anti-interference system, such as the interfering power, the Relative Channel Difference (RCD), and the number of antennas. The simulation results show that higher interfering power can achieve better BER at the receiver.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"205 ","pages":"Article 156138"},"PeriodicalIF":3.2,"publicationDate":"2025-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145617911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-19DOI: 10.1016/j.aeue.2025.156143
Yarram Uma Maheswari, Bappadittya Roy
This work introduces a portable conformal antenna developed for advanced body-centric wireless systems operating in the 2.45 GHz ISM band (Industrial, Scientific, and Medical) with extended resonances near 10.5 and 12.5 GHz. The antenna integrates a -shaped slot within a diamond-shaped patch antenna (DPA) and uses a Defected Ground Structure (DGS) to improve BW (Band Width) and radiation characteristics. Fabricated on a flexible felt substrate, the design achieves a low-profile volume of 0.294 0.294 0.0163 . A wide impedance bandwidth of 3.8 GHz (2–5.8 GHz) with VSWR is achieved, supporting robust multi-band operation. Additional high-frequency resonances enable applications such as biomedical imaging and high-resolution sensing. This design achieves a gain of 5.2 dBi at 2.45 GHz and 8.4 dBi at 5.8 GHz, a radiation efficiency of 90%, and a simulated Specific Absorption Rate (SAR) of 0.0031 Watts per kilogram, according to IEEE safety standards. Due to its broadband performance, low SAR, and mechanical flexibility, the proposed antenna is a strong candidate for future triband wearable communication and sensing systems.
{"title":"Design of a flexible compact insensitive wearable antenna for enhanced performance stability","authors":"Yarram Uma Maheswari, Bappadittya Roy","doi":"10.1016/j.aeue.2025.156143","DOIUrl":"10.1016/j.aeue.2025.156143","url":null,"abstract":"<div><div>This work introduces a portable conformal antenna developed for advanced body-centric wireless systems operating in the 2.45 GHz ISM band (Industrial, Scientific, and Medical) with extended resonances near 10.5 and 12.5 GHz. The antenna integrates a <span><math><mi>π</mi></math></span>-shaped slot within a diamond-shaped patch antenna (DPA) and uses a Defected Ground Structure (DGS) to improve BW (Band Width) and radiation characteristics. Fabricated on a flexible felt substrate, the design achieves a low-profile volume of 0.294 <span><math><mo>×</mo></math></span> 0.294 <span><math><mo>×</mo></math></span> 0.0163 <span><math><msup><mrow><mi>λ</mi></mrow><mrow><mn>3</mn></mrow></msup></math></span>. A wide impedance bandwidth of 3.8 GHz (2–5.8 GHz) with VSWR <span><math><mrow><mo><</mo><mn>2</mn></mrow></math></span> is achieved, supporting robust multi-band operation. Additional high-frequency resonances enable applications such as biomedical imaging and high-resolution sensing. This design achieves a gain of 5.2 dBi at 2.45 GHz and 8.4 dBi at 5.8 GHz, a radiation efficiency of 90%, and a simulated Specific Absorption Rate (SAR) of 0.0031 Watts per kilogram, according to IEEE safety standards. Due to its broadband performance, low SAR, and mechanical flexibility, the proposed antenna is a strong candidate for future triband wearable communication and sensing systems.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"205 ","pages":"Article 156143"},"PeriodicalIF":3.2,"publicationDate":"2025-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145571869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-19DOI: 10.1016/j.aeue.2025.156142
Jiaqian Cui, Lei Zhu
In this article, absorptive filtering antennas (AFAs) are implemented for suppressing unwanted radiation and improving impedance matching outside the working band. To achieve that, a multi-mode absorptive resonator (MMAR) is presented to enhance the radiation bandwidth while providing out-of-band absorption. It is then used to constitute the AFA with high efficiency and controllable performance, including radiation bandwidth and absorptive sidebands, generating flexible radiation nulls and reflection zeros. Specifically, the MMARs are implemented with resistors properly loaded on the microstrip ring resonator to excite the slot antenna. While the open-circuited stubs are introduced to adjust the absorptive frequency by manipulating the higher resonant mode, another pin-loaded MMAR is presented to produce additional resonant modes near the passband, resulting in higher selectivity and a continuous impedance matching band. Simulation results reveal that its working bandwidth depends on the coupling feeding structure. Meanwhile, absorptive frequencies can be adjusted by using the stepped-impedance resonator. According to the absorption curves that vary with resistance values, the flexible performance of the AFA is verified by measurement. Measured and simulated results consistently reveal a high efficiency of about 90 % across a wide bandwidth of 33 %.
{"title":"Wideband slot antenna with controllable absorptive sidebands based on multi-mode absorptive resonators","authors":"Jiaqian Cui, Lei Zhu","doi":"10.1016/j.aeue.2025.156142","DOIUrl":"10.1016/j.aeue.2025.156142","url":null,"abstract":"<div><div>In this article, absorptive filtering antennas (AFAs) are implemented for suppressing unwanted radiation and improving impedance matching outside the working band. To achieve that, a multi-mode absorptive resonator (MMAR) is presented to enhance the radiation bandwidth while providing out-of-band absorption. It is then used to constitute the AFA with high efficiency and controllable performance, including radiation bandwidth and absorptive sidebands, generating flexible radiation nulls and reflection zeros. Specifically, the MMARs are implemented with resistors properly loaded on the microstrip ring resonator to excite the slot antenna. While the open-circuited stubs are introduced to adjust the absorptive frequency by manipulating the higher resonant mode, another pin-loaded MMAR is presented to produce additional resonant modes near the passband, resulting in higher selectivity and a continuous impedance matching band. Simulation results reveal that its working bandwidth depends on the coupling feeding structure. Meanwhile, absorptive frequencies can be adjusted by using the stepped-impedance resonator. According to the absorption curves that vary with resistance values, the flexible performance of the AFA is verified by measurement. Measured and simulated results consistently reveal a high efficiency of about 90 % across a wide bandwidth of 33 %.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"205 ","pages":"Article 156142"},"PeriodicalIF":3.2,"publicationDate":"2025-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145617910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-16DOI: 10.1016/j.aeue.2025.156135
Saeed Amini Harooni, Mohammad Naser-Moghadasi, Behbod Ghalamkari, Mehdi Khatir
A novel AMC-FSS structure is proposed to reduce the radar cross-section (RCS) of a microstrip antenna for wideband applications while maintaining stable antenna characteristics. The design integrates artificial magnetic conductors (AMCs) and a frequency-selective surface (FSS), both implemented as metallic patterns on a shared ground plane. The structure consists of a 3 × 3 array of unit cells, with the bottom layer forming the FSS and the top layer containing two AMC elements engineered to maintain a 180° phase difference across a broad frequency range. In this configuration, we propose a dual-layer structure to achieve effective RCS reduction while preserving the radiation characteristics of the reference antenna. A prototype was fabricated to validate the concept, and the measured results demonstrate strong agreement with simulations, confirming the performance and practicality of the proposed approach.
{"title":"Wideband RCS reduction in microstrip antennas using integrated artificial magnetic conductors and frequency-selective surface","authors":"Saeed Amini Harooni, Mohammad Naser-Moghadasi, Behbod Ghalamkari, Mehdi Khatir","doi":"10.1016/j.aeue.2025.156135","DOIUrl":"10.1016/j.aeue.2025.156135","url":null,"abstract":"<div><div>A novel AMC-FSS structure is proposed to reduce the radar cross-section (RCS) of a microstrip antenna for wideband applications while maintaining stable antenna characteristics. The design integrates artificial magnetic conductors (AMCs) and a frequency-selective surface (FSS), both implemented as metallic patterns on a shared ground plane. The structure consists of a 3 × 3 array of unit cells, with the bottom layer forming the FSS and the top layer containing two AMC elements engineered to maintain a 180° phase difference across a broad frequency range. In this configuration, we propose a dual-layer structure to achieve effective RCS reduction while preserving the radiation characteristics of the reference antenna. A prototype was fabricated to validate the concept, and the measured results demonstrate strong agreement with simulations, confirming the performance and practicality of the proposed approach.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"205 ","pages":"Article 156135"},"PeriodicalIF":3.2,"publicationDate":"2025-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145571868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-15DOI: 10.1016/j.aeue.2025.156134
Lichang Huang , Qunyi Feng , Sha Xu
This paper proposes a novel low-profile, high-gain millimeter-wave (mm-wave) phased array for 5G applications. The element employs a compact series-fed structure with center-feeding via a substrate integrated waveguide (SIW) to stabilize the radiation performance. Parasitic patches are strategically placed between the series-fed radiating elements to increase aperture efficiency and suppress sidelobes. Concurrently, a fan-shaped coupling slot introduces multiple resonances, effectively broadening the impedance bandwidth. A 1 × 4 array prototype was implemented via three-layer PCB technology with a low profile of 0.14λ0 and then characterized. The results show a −10 dB impedance bandwidth of ∼ 10.71 % covering the 5G n257 band (26.5–29.5 GHz), achieving a peak realized gain of 14.17 dBi and a beam scanning range exceeding ± 45° across the band. The measured performance validates the effectiveness of the proposed design, which is attractive for compact and high-performance 5G mm-wave systems.
{"title":"A low-profile high-gain SIW center-fed millimeter-wave phased array with wide-angle scanning for 5G applications","authors":"Lichang Huang , Qunyi Feng , Sha Xu","doi":"10.1016/j.aeue.2025.156134","DOIUrl":"10.1016/j.aeue.2025.156134","url":null,"abstract":"<div><div>This paper proposes a novel low-profile, high-gain millimeter-wave (mm-wave) phased array for 5G applications. The element employs a compact series-fed structure with center-feeding via a substrate integrated waveguide (SIW) to stabilize the radiation performance. Parasitic patches are strategically placed between the series-fed radiating elements to increase aperture efficiency and suppress sidelobes. Concurrently, a fan-shaped coupling slot introduces multiple resonances, effectively broadening the impedance bandwidth. A 1 × 4 array prototype was implemented via three-layer PCB technology with a low profile of 0.14λ<sub>0</sub> and then characterized. The results show a −10 dB impedance bandwidth of ∼ 10.71 % covering the 5G n257 band (26.5–29.5 GHz), achieving a peak realized gain of 14.17 dBi and a beam scanning range exceeding ± 45° across the band. The measured performance validates the effectiveness of the proposed design, which is attractive for compact and high-performance 5G mm-wave systems.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"205 ","pages":"Article 156134"},"PeriodicalIF":3.2,"publicationDate":"2025-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145532984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-15DOI: 10.1016/j.aeue.2025.156132
Julia Nako , Ahmed S. Elwakil , Costas Psychalinos , Brent J. Maundy
The behavior of the cascade connection of two filters each having a true Gaussian impulse response function is studied in this work. It is particularly shown that the impulse response of the resulting higher-order filter is not a true Gaussian function, as might initially be assumed based on the properties of the Gaussian distribution. To validate our findings, an approximation of the cascade filter transfer function was performed through the employment of a curve-fitting technique, and simulations as well as experimental results (using a Field Programmable Analog Array) are shown to match well with the theory.
{"title":"On the behavior of cascaded Gaussian impulse response filters","authors":"Julia Nako , Ahmed S. Elwakil , Costas Psychalinos , Brent J. Maundy","doi":"10.1016/j.aeue.2025.156132","DOIUrl":"10.1016/j.aeue.2025.156132","url":null,"abstract":"<div><div>The behavior of the cascade connection of two filters each having a true Gaussian impulse response function is studied in this work. It is particularly shown that the impulse response of the resulting higher-order filter is not a true Gaussian function, as might initially be assumed based on the properties of the Gaussian distribution. To validate our findings, an approximation of the cascade filter transfer function was performed through the employment of a curve-fitting technique, and simulations as well as experimental results (using a Field Programmable Analog Array) are shown to match well with the theory.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"205 ","pages":"Article 156132"},"PeriodicalIF":3.2,"publicationDate":"2025-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145571870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents novel reconfigurable and electronically tunable immittance simulators using commercially available LT1228 integrated circuits. The proposed circuits simulate four fundamental impedance functions, which are a resistor, a capacitor, an inductor, and a frequency-dependent negative resistor (FDNR) within the same topology. The proposed simulators use only two or three LT1228 ICs and three passive components to provide grounded and floating types, be compact, and function in a variety of ways. A significant contribution of this work is the development of an impedance expression that does not depend on temperature. This makes sure that performance stays stable over a wide range of temperatures without the need for external compensation techniques. The proposed circuits offer linear electronic control via bias currents, enabling precise and dynamic tuning of the simulated element values. Moreover, the proposed simulators can be configured to four lossless impedance functions without needing the matching conditions of passive elements. A study of the parasitic effect is also conducted to assess accuracy and useful frequency range of the proposed configuration. Both grounded and floating configurations are realized and validated through simulation and experimental results. A third-order low-pass ladder filter and a multifunction second-order filter are designed to show the applications of the proposed simulators. The accuracy, reconfigurability, and temperature stability of the proposed circuits are confirmed by the simulation and experimental results, which make them ideal for modern analog signal processing applications. Temperature stability is verified via PSpice simulation over –100 °C to + 100 °C, showing less than 1 % variation, while impedance accuracy and filter applications are confirmed experimentally.
{"title":"Reconfigurable versatile temperature-insensitivity immittance simulators with electronic tunability using commercially available ICs","authors":"Worawut Kulapong , Roman Sotner , Fabian Khateb , Winai Jaikla","doi":"10.1016/j.aeue.2025.156140","DOIUrl":"10.1016/j.aeue.2025.156140","url":null,"abstract":"<div><div>This paper presents novel reconfigurable and electronically tunable immittance simulators using commercially available LT1228 integrated circuits. The proposed circuits simulate four fundamental impedance functions, which are a resistor, a capacitor, an inductor, and a frequency-dependent negative resistor (FDNR) within the same topology. The proposed simulators use only two or three LT1228 ICs and three passive components to provide grounded and floating types, be compact, and function in a variety of ways. A significant contribution of this work is the development of an impedance expression that does not depend on temperature. This makes sure that performance stays stable over a wide range of temperatures without the need for external compensation techniques. The proposed circuits offer linear electronic control via bias currents, enabling precise and dynamic tuning of the simulated element values. Moreover, the proposed simulators can be configured to four lossless impedance functions without needing the matching conditions of passive elements. A study of the parasitic effect is also conducted to assess accuracy and useful frequency range of the proposed configuration. Both grounded and floating configurations are realized and validated through simulation and experimental results. A third-order low-pass ladder filter and a multifunction second-order filter are designed to show the applications of the proposed simulators. The accuracy, reconfigurability, and temperature stability of the proposed circuits are confirmed by the simulation and experimental results, which make them ideal for modern analog signal processing applications. Temperature stability is verified via PSpice simulation over –100 °C to + 100 °C, showing less than 1 % variation, while impedance accuracy and filter applications are confirmed experimentally.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"204 ","pages":"Article 156140"},"PeriodicalIF":3.2,"publicationDate":"2025-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145579569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-14DOI: 10.1016/j.aeue.2025.156139
Kuruva Mahesh, Syed Shameem
The demand for efficient adder architectures is rapidly increasing due to the pervasive use of artificial intelligence, cryptography, and other computationally intensive applications. This paper presents a novel low-power, high-speed ternary full adder (TFA) design based on graphene nanoribbon field-effect transistors (GNRFETs). By exploiting the multi-threshold capability of GNRFET devices, the proposed TFA leverages unary operators, transmission gates, and pass-transistor logic to minimize device count while achieving superior performance. The design avoids voltage-degraded paths, thereby guaranteeing full-swing outputs. Robustness is verified through process, voltage, and temperature (PVT) analysis as well as Monte Carlo simulations, confirming stable operation under variability. Comparative evaluation with state-of-the-art GNRFET-based TFAs demonstrates improvements of 6.3 % in delay, 14.6 % in power consumption, and 34.7 % in energy efficiency, along with a 26.1 % reduction in transistor count. All simulations were performed using Synopsys HSPICE with a SPICE-compatible 32-nm GNRFET technology model. Furthermore, when the proposed TFA was applied to the image-processing task as a real-world demonstration, it not only delivered superior image fidelity but also achieved the highest figure of merit (FOM).
{"title":"Low-power, high-speed ternary adder using multi-threshold GNR transistors for efficient digital computing architectures","authors":"Kuruva Mahesh, Syed Shameem","doi":"10.1016/j.aeue.2025.156139","DOIUrl":"10.1016/j.aeue.2025.156139","url":null,"abstract":"<div><div>The demand for efficient adder architectures is rapidly increasing due to the pervasive use of artificial intelligence, cryptography, and other computationally intensive applications. This paper presents a novel low-power, high-speed ternary full adder (TFA) design based on graphene nanoribbon field-effect transistors (GNRFETs). By exploiting the multi-threshold capability of GNRFET devices, the proposed TFA leverages unary operators, transmission gates, and pass-transistor logic to minimize device count while achieving superior performance. The design avoids voltage-degraded paths, thereby guaranteeing full-swing outputs. Robustness is verified through process, voltage, and temperature (PVT) analysis as well as Monte Carlo simulations, confirming stable operation under variability. Comparative evaluation with state-of-the-art GNRFET-based TFAs demonstrates improvements of 6.3 % in delay, 14.6 % in power consumption, and 34.7 % in energy efficiency, along with a 26.1 % reduction in transistor count. All simulations were performed using Synopsys HSPICE with a SPICE-compatible 32-nm GNRFET technology model. Furthermore, when the proposed TFA was applied to the image-processing task as a real-world demonstration, it not only delivered superior image fidelity but also achieved the highest figure of merit (FOM).</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"205 ","pages":"Article 156139"},"PeriodicalIF":3.2,"publicationDate":"2025-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145571867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-14DOI: 10.1016/j.aeue.2025.156141
Jin Xie , Qibin Chen , Jinghu Li , Zhicong Luo , Jianwei Zhang
This article presents a fully integrated, capacitor-less analog low-dropout regulator (LDO) employing a time–voltage hybrid domain control architecture to achieve a wide operating range and fast transient response. The hybrid-domain approach featuring a hybrid triple-loop control scheme is introduced, a time-domain feedback loop, together with two voltage-domain feedback loops, cooperatively achieves wide band high power-supply rejection (PSR). This approach also removes the clock-frequency recovery limitation of conventional time-domain LDOs, thereby improving load transient response. An improved charge-pump circuit with an additional current branch reduces current mismatch and improves DC regulation. This work is designed in 180-nm CMOS and supports an input range of 0.8–1.8 V and an output range of 0.7–1.7 V. The quiescent current is when the input voltage is 0.8 V. Simulated PSR is −70 dB at 1 kHz and better than −40 dB at 1 MHz. Under a 19.9 mA load step with a 1 ns edge time, the overshoot recovery time is less than 47 ns.
{"title":"A triple-loop hybrid-domain LDO with wide operating range and 47 ns recovery in 180 nm CMOS","authors":"Jin Xie , Qibin Chen , Jinghu Li , Zhicong Luo , Jianwei Zhang","doi":"10.1016/j.aeue.2025.156141","DOIUrl":"10.1016/j.aeue.2025.156141","url":null,"abstract":"<div><div>This article presents a fully integrated, capacitor-less analog low-dropout regulator (LDO) employing a time–voltage hybrid domain control architecture to achieve a wide operating range and fast transient response. The hybrid-domain approach featuring a hybrid triple-loop control scheme is introduced, a time-domain feedback loop, together with two voltage-domain feedback loops, cooperatively achieves wide band high power-supply rejection (PSR). This approach also removes the clock-frequency recovery limitation of conventional time-domain LDOs, thereby improving load transient response. An improved charge-pump circuit with an additional current branch reduces current mismatch and improves DC regulation. This work is designed in 180-nm CMOS and supports an input range of 0.8–1.8 V and an output range of 0.7–1.7 V. The quiescent current is <span><math><mrow><mn>27</mn><mspace></mspace><mi>μ</mi><mi>A</mi></mrow></math></span> when the input voltage is 0.8 V. Simulated PSR is −70 dB at 1 kHz and better than −40 dB at 1 MHz. Under a 19.9 mA load step with a 1 ns edge time, the overshoot recovery time is less than 47 ns.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"204 ","pages":"Article 156141"},"PeriodicalIF":3.2,"publicationDate":"2025-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145579570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}