The sinoatrial (SA) node cells play a vital role as the principal pacemaker in mammalian hearts, generating regular and spontaneous action potentials to regulate the heart’s rhythm. Comprehending the intricate activity of the SA node’s operation necessitates a collection of differential formulas that tackle non-linear functions. The study presents a new technique to improve the digital representation of the SA node cell model, offering benefits such as decreased hardware needs, enhanced processing speed and accuracy, and reduced implementation expenses by transforming the original model’s differential equations into a unified trigonometric function. This transformation significantly simplifies the computational complexity by eliminating the need for multipliers, resulting in a streamlined set of mathematical expressions. The digital implementation of this novel method can be efficiently realized using the Coordinate Rotation Digital Computer (CORDIC) algorithm, which circumvents the necessity for cumbersome mathematical operations. To demonstrate the viability of this approach, the proposed model is successfully synthesized and implemented on a Field-Programmable Gate Array (FPGA). The results of the implementation demonstrate a significant rise in the operating frequency, which is approximately 6.14 times greater than that of the original model. Furthermore, there is a notable 45 percent decrease in power usage. The lowered hardware needs make significant scalability possible, thus allowing for the inclusion of approximately 12 times as many SA node cells on a sole FPGA board in comparison to the original design.
中房(SA)结细胞作为哺乳动物心脏的主要起搏器发挥着至关重要的作用,它产生有规律的自发动作电位来调节心脏节律。要理解 SA 节点错综复杂的运行活动,就必须收集处理非线性函数的微分公式。这项研究提出了一种改进 SA 节点细胞模型数字表示的新技术,通过将原始模型的微分方程转换为统一的三角函数,提供了减少硬件需求、提高处理速度和准确性以及减少实施费用等好处。这种转换无需使用乘法器,从而大大简化了计算的复杂性,使数学表达式更加精简。使用坐标旋转数字计算机(CORDIC)算法可以有效地实现这种新方法的数字化,从而避免了繁琐的数学运算。为了证明这种方法的可行性,我们成功地在现场可编程门阵列(FPGA)上合成并实现了所提出的模型。实施结果表明,工作频率显著提高,约为原始模型的 6.14 倍。此外,功耗显著降低了 45%。硬件需求的降低使可扩展性成为可能,因此,在一块 FPGA 板上安装的 SA 节点单元数量大约是原始设计的 12 倍。
{"title":"Creative and accurate method for optimal hardware implementation of neurons and biological cells: Application in FPGA-based implementation of cardiac pacemaker cell","authors":"Gilda Ghanbarpour , Milad Ghanbarpour , Pourya Spari","doi":"10.1016/j.aeue.2024.155561","DOIUrl":"10.1016/j.aeue.2024.155561","url":null,"abstract":"<div><div>The sinoatrial (SA) node cells play a vital role as the principal pacemaker in mammalian hearts, generating regular and spontaneous action potentials to regulate the heart’s rhythm. Comprehending the intricate activity of the SA node’s operation necessitates a collection of differential formulas that tackle non-linear functions. The study presents a new technique to improve the digital representation of the SA node cell model, offering benefits such as decreased hardware needs, enhanced processing speed and accuracy, and reduced implementation expenses by transforming the original model’s differential equations into a unified trigonometric function. This transformation significantly simplifies the computational complexity by eliminating the need for multipliers, resulting in a streamlined set of mathematical expressions. The digital implementation of this novel method can be efficiently realized using the Coordinate Rotation Digital Computer (CORDIC) algorithm, which circumvents the necessity for cumbersome mathematical operations. To demonstrate the viability of this approach, the proposed model is successfully synthesized and implemented on a Field-Programmable Gate Array (FPGA). The results of the implementation demonstrate a significant rise in the operating frequency, which is approximately 6.14 times greater than that of the original model. Furthermore, there is a notable 45 percent decrease in power usage. The lowered hardware needs make significant scalability possible, thus allowing for the inclusion of approximately 12 times as many SA node cells on a sole FPGA board in comparison to the original design.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155561"},"PeriodicalIF":3.0,"publicationDate":"2024-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142554458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-18DOI: 10.1016/j.aeue.2024.155557
Jianxing Lin , Jinghu Li , Zhicong Luo , Mingyan Yu
This paper introduces a novel phase-shifting technique for quadrature voltage-controlled oscillators (QVCOs) utilizing an LC emitter degeneration architecture. The proposed technique enables a phase shift of up to ±90°in the transconductance of the coupling path while also generating a negative input resistance. This innovative approach avoids phase ambiguity, mitigates the trade-off between phase noise and phase error, and substantially reduces QVCO power consumption. Moreover, compared to conventional capacitance emitter degeneration methods, the LC emitter degeneration structure has a lower equivalent input capacitance, expanding the QVCO’s frequency tuning range. The designed QVCO is implemented using a 180 nm SiGe BiCMOS technology, occupying a compact area of 0.037 mm. Post-layout simulation evaluations under various process, voltage, and temperature (PVT) conditions validate the robustness and reliability of the design. Results indicate a phase noise of 102.7 dBc/Hz at a 1 MHz offset from a 22.1 GHz carrier, a frequency tuning range of 25.2%, a phase error of 0.9°, and a power consumption of 12 mW from a 1.1 V supply, achieving a figure of merit (FoM) of 178.8 dBc/Hz.
{"title":"A low-power quadrature voltage-controlled oscillators with LC emitter degeneration phase shift technique","authors":"Jianxing Lin , Jinghu Li , Zhicong Luo , Mingyan Yu","doi":"10.1016/j.aeue.2024.155557","DOIUrl":"10.1016/j.aeue.2024.155557","url":null,"abstract":"<div><div>This paper introduces a novel phase-shifting technique for quadrature voltage-controlled oscillators (QVCOs) utilizing an LC emitter degeneration architecture. The proposed technique enables a phase shift of up to ±90°in the transconductance of the coupling path while also generating a negative input resistance. This innovative approach avoids phase ambiguity, mitigates the trade-off between phase noise and phase error, and substantially reduces QVCO power consumption. Moreover, compared to conventional capacitance emitter degeneration methods, the LC emitter degeneration structure has a lower equivalent input capacitance, expanding the QVCO’s frequency tuning range. The designed QVCO is implemented using a 180 nm SiGe BiCMOS technology, occupying a compact area of 0.037 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>. Post-layout simulation evaluations under various process, voltage, and temperature (PVT) conditions validate the robustness and reliability of the design. Results indicate a phase noise of 102.7 dBc/Hz at a 1 MHz offset from a 22.1 GHz carrier, a frequency tuning range of 25.2%, a phase error of 0.9°, and a power consumption of 12 mW from a 1.1 V supply, achieving a figure of merit (FoM) of 178.8 dBc/Hz.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155557"},"PeriodicalIF":3.0,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-18DOI: 10.1016/j.aeue.2024.155560
Ravi Kumar Majji , Tirumalasetty Chiranjeevi , Radha Kumari N , G krishnaveni
The extraction of fundamental current and controlling the H-bridge circuit, called shunt active power filter (SAPF), for power quality support have always been major research concerns. The effectiveness of a SAPF depends on its fundamental component estimation. In this context, empirical mode decomposition (EMD) is applied to SAPF operations due to its effectiveness in complex signal analysis. Being a data-driven, adaptive tool, EMD decomposes the distorted nonlinear signal into signal- and noise-dominated signals, called intrinsic mode functions (IMFs). However, its exploitation has been hindered by its mode mixing issue. As a remedy, a second-order generalized integrator (SOGI) is integrated with the EMD approach to extract the required fundamental active component of distorted load current. Thus, this work investigates the effect of an EMD-based SOGI hybrid control approach in extracting the fundamental active component of distorted load current. The MATLAB/Simulink results demonstrate the effectiveness of the proposed hybrid control strategy for nonlinear load current generated by the diode bridge rectifier. Furthermore, the simulated results are validated through a real-time simulation result using the OPAL-RT OP4510 test bench. Results are analyzed under sinusoidal and distorted voltage scenarios at the point of common coupling. The simulation results showed that the proposed hybrid control approach provides better active filtering efficiency, support for reactive power, and improved total harmonic distortion, which meets the IEEE 1547-2018 standard.
{"title":"Data-adaptive hybrid control for power quality improvement using H-bridge circuit","authors":"Ravi Kumar Majji , Tirumalasetty Chiranjeevi , Radha Kumari N , G krishnaveni","doi":"10.1016/j.aeue.2024.155560","DOIUrl":"10.1016/j.aeue.2024.155560","url":null,"abstract":"<div><div>The extraction of fundamental current and controlling the H-bridge circuit, called shunt active power filter (SAPF), for power quality support have always been major research concerns. The effectiveness of a SAPF depends on its fundamental component estimation. In this context, empirical mode decomposition (EMD) is applied to SAPF operations due to its effectiveness in complex signal analysis. Being a data-driven, adaptive tool, EMD decomposes the distorted nonlinear signal into signal- and noise-dominated signals, called intrinsic mode functions (IMFs). However, its exploitation has been hindered by its mode mixing issue. As a remedy, a second-order generalized integrator (SOGI) is integrated with the EMD approach to extract the required fundamental active component of distorted load current. Thus, this work investigates the effect of an EMD-based SOGI hybrid control approach in extracting the fundamental active component of distorted load current. The MATLAB/Simulink results demonstrate the effectiveness of the proposed hybrid control strategy for nonlinear load current generated by the diode bridge rectifier. Furthermore, the simulated results are validated through a real-time simulation result using the OPAL-RT OP4510 test bench. Results are analyzed under sinusoidal and distorted voltage scenarios at the point of common coupling. The simulation results showed that the proposed hybrid control approach provides better active filtering efficiency, support for reactive power, and improved total harmonic distortion, which meets the IEEE 1547-2018 standard.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155560"},"PeriodicalIF":3.0,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1016/j.aeue.2024.155550
K. Brindha, J. Manjula
High-speed, low-power consumption, compact area, and high resolution are critical for analog/mixed signal applications. This article presents a novel design for a dynamic latch comparator that achieves exceptional speed, minimal power consumption, and a significantly reduced die area. The innovative comparator leverages a novel charge shared logic-based reset technique, which enables unparalleled speed and power efficiency. Rigorous simulations and analyses confirm that the delay time is drastically reduced compared to traditional dynamic latched comparators. The results clearly indicate that the proposed design exhibits high tolerance to PVT (process, voltage, and temperature) variations, making it highly suitable for mixed-signal applications. Designed and simulated using advanced 45 nm CMOS technology, the proposed circuit achieves an impressive delay of 18.5 ps and a remarkably low power consumption of 3.66 μW at a 1 V supply voltage and 1 GHz clock frequency.
{"title":"Charge pump-based PVT-resilient 45 nm CMOS dynamic comparator leveraging high speed and power efficiency","authors":"K. Brindha, J. Manjula","doi":"10.1016/j.aeue.2024.155550","DOIUrl":"10.1016/j.aeue.2024.155550","url":null,"abstract":"<div><div>High-speed, low-power consumption, compact area, and high resolution are critical for analog/mixed signal applications. This article presents a novel design for a dynamic latch comparator that achieves exceptional speed, minimal power consumption, and a significantly reduced die area. The innovative comparator leverages a novel charge shared logic-based reset technique, which enables unparalleled speed and power efficiency. Rigorous simulations and analyses confirm that the delay time is drastically reduced compared to traditional dynamic latched comparators. The results clearly indicate that the proposed design exhibits high tolerance to PVT (process, voltage, and temperature) variations, making it highly suitable for mixed-signal applications. Designed and simulated using advanced 45 nm CMOS technology, the proposed circuit achieves an impressive delay of 18.5 ps and a remarkably low power consumption of 3.66 μW at a 1 V supply voltage and 1 GHz clock frequency.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155550"},"PeriodicalIF":3.0,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-15DOI: 10.1016/j.aeue.2024.155555
Manh Le-Tran , Thai-Hoc Vu
Visible light communication (VLC) with the use of multiple light-emitting diodes (LEDs) has recently offered extensive indoor coverage for both communication and illumination purposes. Meanwhile, index modulation refers to modulation techniques that use the indices of certain mediums to transmit additional information. The medium can be a time slot, frequency carrier, or especially antenna activation index. In this paper, we present the first attempt at semi-angle-based index modulation for a visible light communication (VLC) system by using LED with different semi-angle values. Instead of using identical semi-angle LEDs, multiple LEDs are divided into several clusters and all LEDs in each cluster have different semi-angle values. Moreover, at any time of transmission, only some clusters are active, and only a single LED of each active cluster is used to convey the pulse amplitude modulation (PAM) signal. We also proposed a minimum mean-squared error (MMSE) based maximum likelihood (ML) detector that performs ML detection on some candidates based on an initial MMSE solution. The simulation results show that the proposed scheme significantly improves the symbol error rate (SER) compared to conventional schemes. Finally, the proposed detector also proves to approach the ML detector performance while still maintaining acceptable complexity cost.
最近,使用多个发光二极管(LED)的可见光通信(VLC)已在室内广泛应用,既可用于通信,也可用于照明。同时,指数调制是指利用某些介质的指数来传输附加信息的调制技术。介质可以是时隙、频率载波,特别是天线激活指数。在本文中,我们首次尝试在可见光通信(VLC)系统中使用基于半角的指数调制,即使用不同半角值的 LED。我们没有使用完全相同的半角 LED,而是将多个 LED 分成若干个簇,每个簇中的所有 LED 都具有不同的半角值。此外,在任何传输时间,只有部分簇处于活动状态,每个活动簇中只有一个 LED 用来传输脉冲幅度调制(PAM)信号。我们还提出了一种基于最小均方误差(MMSE)的最大似然(ML)检测器,该检测器根据初始 MMSE 解法对一些候选信号执行 ML 检测。仿真结果表明,与传统方案相比,拟议方案显著提高了符号错误率(SER)。最后,所提出的检测器还能在保持可接受的复杂度成本的同时,接近 ML 检测器的性能。
{"title":"A novel semi-angle-based index modulation scheme for MIMO visible light communication","authors":"Manh Le-Tran , Thai-Hoc Vu","doi":"10.1016/j.aeue.2024.155555","DOIUrl":"10.1016/j.aeue.2024.155555","url":null,"abstract":"<div><div>Visible light communication (VLC) with the use of multiple light-emitting diodes (LEDs) has recently offered extensive indoor coverage for both communication and illumination purposes. Meanwhile, index modulation refers to modulation techniques that use the indices of certain mediums to transmit additional information. The medium can be a time slot, frequency carrier, or especially antenna activation index. In this paper, we present the first attempt at semi-angle-based index modulation for a visible light communication (VLC) system by using LED with different semi-angle values. Instead of using identical semi-angle LEDs, multiple LEDs are divided into several clusters and all LEDs in each cluster have different semi-angle values. Moreover, at any time of transmission, only some clusters are active, and only a single LED of each active cluster is used to convey the pulse amplitude modulation (PAM) signal. We also proposed a minimum mean-squared error (MMSE) based maximum likelihood (ML) detector that performs ML detection on some candidates based on an initial MMSE solution. The simulation results show that the proposed scheme significantly improves the symbol error rate (SER) compared to conventional schemes. Finally, the proposed detector also proves to approach the ML detector performance while still maintaining acceptable complexity cost.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155555"},"PeriodicalIF":3.0,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-12DOI: 10.1016/j.aeue.2024.155558
Ali Esmailpoor, Emad Ebrahimi
In this paper, a 4-transistor sub-one-volt voltage reference with picowatt power consumption is presented. To achieve ultra-low power consumption and low-voltage operation, all transistors are designed to operate in subthreshold region. By proper design of the circuit, DIBL effect is also compensated to enhance temperature coefficient of the circuit and line sensitivity. The proposed circuit consists of only four different transistors (i.e. thick oxide, native VTH, medium VTH) in a self-biased scheme such that eliminates the need for any start-up circuit. A prototype of the proposed circuit that generates a 341-mV voltage reference is designed and simulated in a standard 0.18-µm CMOS technology. The proposed reference circuit exhibits an average temperature coefficient of 7.6 ppm/°C across all process corners while the total power consumption is as low as 249 picowatt. The average line sensitivity of the circuit is 0.029 %/V within a wide supply range of 0.6 to 3.3 V. Ultra-low power consumption and line sensitivity, and excellent thermal stability render it ideal for integration into RFID and IoT applications.
{"title":"A simple picowatt 7.6 ppm/°C, 0.029 %/V line sensitivity fully-CMOS voltage reference with DIBL cancelation","authors":"Ali Esmailpoor, Emad Ebrahimi","doi":"10.1016/j.aeue.2024.155558","DOIUrl":"10.1016/j.aeue.2024.155558","url":null,"abstract":"<div><div>In this paper, a 4-transistor sub-one-volt voltage reference with picowatt power consumption is presented. To achieve ultra-low power consumption and low-voltage operation, all transistors are designed to operate in subthreshold region. By proper design of the circuit, DIBL effect is also compensated to enhance temperature coefficient of the circuit and line sensitivity. The proposed circuit consists of only four different transistors (i.e. thick oxide, native V<sub>TH</sub>, medium V<sub>TH</sub>) in a self-biased scheme such that eliminates the need for any start-up circuit. A prototype of the proposed circuit that generates a 341-mV voltage reference is designed and simulated in a standard 0.18-µm CMOS technology. The proposed reference circuit exhibits an average temperature coefficient of 7.6 ppm/°C across all process corners while the total power consumption is as low as 249 picowatt. The average line sensitivity of the circuit is 0.029 %/V within a wide supply range of 0.6 to 3.3 V. Ultra-low power consumption and line sensitivity, and excellent thermal stability render it ideal for integration into RFID and IoT applications.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155558"},"PeriodicalIF":3.0,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-11DOI: 10.1016/j.aeue.2024.155549
Haoran Xing , Chaoyi Ma , Yue Wu , Mengjun Wang , Chao Fan , Hongxing Zheng , Erping Li
To implement frequency and polarization hybrid reconfiguration, a 4 × 4 array has been investigated. The radiation elements of the antenna array consist of cylindrical dielectric resonators, Wilkinson power divider, PIN diode, and dielectric substrate. The PIN diode controls the states of each branch in the Wilkinson power divider to achieve frequency and polarization reconfigurability. To verify the feasibility of the design, a fabricated sample of the proposed antenna array has been measured. The results demonstrate that the antenna array can be switched freely between its operating frequencies and polarizations. It operates within a bandwidth of 1.93 to 4.6 GHz for frequency reconfiguration, and three common polarization states—linear polarization, left-handed circular polarization, and right-handed circular polarization—can be continuously tuned from 2.96 to 3.39 GHz.
{"title":"Reconfigurable dielectric resonator antenna and array with frequency and polarization flexibility","authors":"Haoran Xing , Chaoyi Ma , Yue Wu , Mengjun Wang , Chao Fan , Hongxing Zheng , Erping Li","doi":"10.1016/j.aeue.2024.155549","DOIUrl":"10.1016/j.aeue.2024.155549","url":null,"abstract":"<div><div>To implement frequency and polarization hybrid reconfiguration, a 4 × 4 array has been investigated. The radiation elements of the antenna array consist of cylindrical dielectric resonators, Wilkinson power divider, PIN diode, and dielectric substrate. The PIN diode controls the states of each branch in the Wilkinson power divider to achieve frequency and polarization reconfigurability. To verify the feasibility of the design, a fabricated sample of the proposed antenna array has been measured. The results demonstrate that the antenna array can be switched freely between its operating frequencies and polarizations. It operates within a bandwidth of 1.93 to 4.6 GHz for frequency reconfiguration, and three common polarization states—linear polarization, left-handed circular polarization, and right-handed circular polarization—can be continuously tuned from 2.96 to 3.39 GHz.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155549"},"PeriodicalIF":3.0,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142446013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work introduces a FinFet based low-power 11T SRAM cell with write enhanced feature, which is considered to meet modern technology requirements due to its distinctive features and performance. The proposed 11T SRAM cell is designed in such a way, so that it reduces the overall power consumption, improving access time, and static noise margin (SNM), especially during the write operation. The proposed 11T SRAM cell is compared with other SRAM cells, including conventional 6T (conv6T), dual pull-up transistor 10T (DPUT10T), dual pull-down transistor 10T (DPDT10T), dual transmission gate 9T (DTG9T), and dual transmission gate 10T (DTG10T), at an equitable standard. The results obtained at the supply voltage of 0.5 V @ 27 °C shows the reduction in leakage power during hold 1 operation by 1.61/1.33/1.44/1.63/1.46, and reduction in power consumption during read operation by 1.02/1.55/ 1.01/1.81/1.97 in comparison with conv6T/DPUT10T/ DPDT10T/DTG9T/DTG10T, respectively. Write access time is also improved by a factor of 1.67/1.71/2.59/1.45/1.97, respectively. Additionally, read static noise margin (RSNM) and write static noise margin (WSNM) are improved by 2.03/1.01/1.65/1.54/1.43, and 1.42/1.33/1.41/1.02/1.62, respectively. This demonstrates why the proposed low-power 11T SRAM cell is desirable, especially when compared to the other cells under consideration.
{"title":"A FinFET Based Low-Power Write Enhanced SRAM Cell With Improved Stability","authors":"Atharv Sharma , Kulbhushan Sharma , V.K. Tomar , Ashish Sachdeva","doi":"10.1016/j.aeue.2024.155556","DOIUrl":"10.1016/j.aeue.2024.155556","url":null,"abstract":"<div><div>This work introduces a FinFet based low-power 11T SRAM cell with write enhanced feature, which is considered to meet modern technology requirements due to its distinctive features and performance. The proposed 11T SRAM cell is designed in such a way, so that it reduces the overall power consumption, improving access time, and static noise margin (SNM), especially during the write operation. The proposed 11T SRAM cell is compared with other SRAM cells, including conventional 6T (conv6T), dual pull-up transistor 10T (DPUT10T), dual pull-down transistor 10T (DPDT10T), dual transmission gate 9T (DTG9T), and dual transmission gate 10T (DTG10T), at an equitable standard. The results obtained at the supply voltage of 0.5 V @ 27 °C shows the reduction in leakage power during hold 1 operation by 1.61<span><math><mo>×</mo></math></span>/1.33<span><math><mo>×</mo></math></span>/1.44<span><math><mo>×</mo></math></span>/1.63<span><math><mo>×</mo></math></span>/1.46<span><math><mo>×</mo></math></span>, and reduction in power consumption during read operation by 1.02<span><math><mo>×</mo></math></span>/1.55<span><math><mo>×</mo></math></span>/ 1.01<span><math><mo>×</mo></math></span>/1.81<span><math><mo>×</mo></math></span>/1.97<span><math><mo>×</mo></math></span> in comparison with conv6T/DPUT10T/ DPDT10T/DTG9T/DTG10T, respectively. Write access time is also improved by a factor of 1.67<span><math><mo>×</mo></math></span>/1.71<span><math><mo>×</mo></math></span>/2.59<span><math><mo>×</mo></math></span>/1.45<span><math><mo>×</mo></math></span>/1.97<span><math><mo>×</mo></math></span>, respectively. Additionally, read static noise margin (RSNM) and write static noise margin (WSNM) are improved by 2.03<span><math><mo>×</mo></math></span>/1.01<span><math><mo>×</mo></math></span>/1.65<span><math><mo>×</mo></math></span>/1.54<span><math><mo>×</mo></math></span>/1.43<span><math><mo>×</mo></math></span>, and 1.42<span><math><mo>×</mo></math></span>/1.33<span><math><mo>×</mo></math></span>/1.41<span><math><mo>×</mo></math></span>/1.02<span><math><mo>×</mo></math></span>/1.62<span><math><mo>×</mo></math></span>, respectively. This demonstrates why the proposed low-power 11T SRAM cell is desirable, especially when compared to the other cells under consideration.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155556"},"PeriodicalIF":3.0,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-10DOI: 10.1016/j.aeue.2024.155554
Bincheng Lei, Yanhan Zeng
This paper presents a low-power, high-accuracy self-biased full CMOS temperature sensor based on sub-threshold currents at sub-thermal drain voltage. The sensor achieves high accuracy and minimal corner dependence by generating sub-threshold current ratios using NMOS transistors of different sizes operating at sub-thermal drain voltage. The proposed self-biased all-CMOS temperature sensing architecture enhances sensitivity by up to seven times and improves linearity. The overall stability under temperature fluctuations is significantly enhanced by utilizing a substrate diode structure that maintains constant current variation. Additionally, a high-threshold comparator with a fast response compresses the oscillator reset voltage difference, enabling ultra-low power operation. Timing logic control is employed to discard unstable cycle outputs, thereby reducing errors and achieving high-accuracy outputs. Operating at 1 V, the circuit consumes only 11 nW at 27 °C in a 180 nm CMOS process. It achieves a peak-to-peak inaccuracy of +0.34 °C/−0.38 °C from −10 to 100 °C after two-point calibration, with a resolution of 40 mK and a resolution FoM as low as 3.7 .
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Today, GPS-free drone localization is increasingly gaining attention in various applications, but it faces significant accuracy challenges in three-dimensional (3D) space due to various impairments. This study investigates the effects of carrier frequency offset (CFO), phase noise (PN), and down-tilted base station (BS) antennas on drone positioning and tracking. Additionally, we explore the impact of inter-site distance (ISD) and BS density on drone position estimation accuracy. In our methodology, we consider a flying drone equipped with a single transmission antenna and BSs configured with 4 × 4 antennas under specific impairments. We first analyze the effects of these impairments on the signal’s covariance matrix. Then, using the MUSIC algorithm, we estimate the azimuth and elevation angles, which serve as the basis for drone localization using the Least Squares (LS) method across all BSs. Finally, the estimated positions feed into an Extended Kalman Filter (EKF) for tracking. Our results present a sequential analysis of the impact of all impairments on the off-diagonal covariance matrix, on the Angle of Arrival (AOA) estimation and 3D drone localization. We use simulations to demonstrate how hardware impairments affect 3D drone localization accuracy under varying ISD and BS densities.
如今,无 GPS 无人机定位在各种应用中日益受到关注,但由于各种干扰,它在三维(3D)空间中面临着巨大的精度挑战。本研究探讨了载波频率偏移(CFO)、相位噪声(PN)和下倾基站(BS)天线对无人机定位和跟踪的影响。此外,我们还探讨了站点间距离(ISD)和基站密度对无人机位置估计精度的影响。在我们的研究方法中,我们考虑了在特定干扰条件下,无人机配备单根发射天线和配置 4 × 4 天线的 BS。我们首先分析了这些干扰对信号协方差矩阵的影响。然后,我们使用 MUSIC 算法估计方位角和仰角,并以此为基础,使用最小二乘法(LS)对所有 BS 进行无人机定位。最后,估算出的位置进入扩展卡尔曼滤波器(EKF)进行跟踪。我们的研究结果按顺序分析了所有损伤对非对角线协方差矩阵、到达角(AOA)估计和 3D 无人机定位的影响。我们利用仿真演示了在不同的 ISD 和 BS 密度下,硬件损伤对 3D 无人机定位精度的影响。
{"title":"Impact of hardware impairments and BS antenna tilt on 3D drone localization and tracking","authors":"Mehari Meles, Akash Rajasekaran, Estifanos Yohannes Menta, Lauri Mela, Riku Jäntti","doi":"10.1016/j.aeue.2024.155543","DOIUrl":"10.1016/j.aeue.2024.155543","url":null,"abstract":"<div><div>Today, GPS-free drone localization is increasingly gaining attention in various applications, but it faces significant accuracy challenges in three-dimensional (3D) space due to various impairments. This study investigates the effects of carrier frequency offset (CFO), phase noise (PN), and down-tilted base station (BS) antennas on drone positioning and tracking. Additionally, we explore the impact of inter-site distance (ISD) and BS density on drone position estimation accuracy. In our methodology, we consider a flying drone equipped with a single transmission antenna and BSs configured with 4 × 4 antennas under specific impairments. We first analyze the effects of these impairments on the signal’s covariance matrix. Then, using the MUSIC algorithm, we estimate the azimuth and elevation angles, which serve as the basis for drone localization using the Least Squares (LS) method across all BSs. Finally, the estimated positions feed into an Extended Kalman Filter (EKF) for tracking. Our results present a sequential analysis of the impact of all impairments on the off-diagonal covariance matrix, on the Angle of Arrival (AOA) estimation and 3D drone localization. We use simulations to demonstrate how hardware impairments affect 3D drone localization accuracy under varying ISD and BS densities.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"187 ","pages":"Article 155543"},"PeriodicalIF":3.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142442057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}