Microelectronics Reliability最新文献_第3页

Comparison of multiple AI models for failure classification in smart plug top case study 智能塞顶故障分类的多种人工智能模型比较

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-01-21 DOI: 10.1016/j.microrel.2026.116019

M.L. Hoang , S. Daniele , N. Delmonte , M. Dal Re , P. Cova , D. Santoro

Smart plug tops (SPTs) with sensing capabilities are increasingly important for real-time monitoring and diagnostics in internal combustion engines. However, the deployment of numerous electronic devices and the increasing system complexity can lead to multiple types of failures that must be accurately investigated and categorized. This research presents a machine learning (ML) based approach for the categorization and prediction of various failure modes occurring in SPTs. The method involves systematic collection of sensor data during the testing phase of SPTs, which is then linked to failures identified through lifetime analysis. The ML model is trained using relevant features extracted from the acquired data, such as voltage levels, charge times, current levels, and other electrical parameters characterizing the SPT's operating behavior. The model is refined using a training and validation method to accurately predict various types of failures, such as electric discharge on the transformer secondary winding, damping diode breakdown, and short circuits between windings. A major challenge addressed in this work is the limited number of failure samples, since the device predominantly operates under normal conditions and only occasionally exhibits faulty behavior. Hence, an upsampling technique was applied to improve this imbalanced dataset. Various Artificial Intelligence (AI) models, including Machine Learning and Deep Learning were compared with each other to find out the most appropriate one for this particular case. The best classification algorithm achieves high accuracy along with good precision, recall, and F1-score on the test data. The results demonstrate the potential of ML-based analysis to enable the early identification of problem symptoms during acceptance testing and to provide a probabilistic classification of different failure types, thereby supporting predictive maintenance and reliability assessment of SPTs.

具有传感功能的智能塞顶（spt）对于内燃机的实时监测和诊断越来越重要。然而，大量电子设备的部署和日益增加的系统复杂性可能导致多种类型的故障，必须准确地调查和分类。本研究提出了一种基于机器学习（ML）的方法，用于spt发生的各种故障模式的分类和预测。该方法包括在spt测试阶段系统收集传感器数据，然后通过寿命分析将其与故障联系起来。机器学习模型使用从采集数据中提取的相关特征进行训练，例如电压水平、充电时间、电流水平和表征SPT工作行为的其他电气参数。利用训练和验证方法对模型进行了改进，以准确预测变压器二次绕组放电、阻尼二极管击穿和绕组间短路等各种类型的故障。在这项工作中解决的一个主要挑战是故障样本的数量有限，因为设备主要在正常条件下运行，只是偶尔表现出故障行为。因此，采用上采样技术来改善这种不平衡数据集。各种人工智能（AI）模型，包括机器学习和深度学习，相互比较，以找出最适合这个特定案例的模型。最好的分类算法在测试数据上具有较高的准确率、较高的查全率和f1分。结果表明，基于ml的分析可以在验收测试期间早期识别问题症状，并提供不同故障类型的概率分类，从而支持spt的预测性维护和可靠性评估。

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引用次数: 0

Degradation mechanisms of gate oxide reliability in SiC Power MOSFETs under different energy proton irradiation 不同能量质子辐照下SiC功率mosfet栅极氧化物可靠性的退化机理

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-01-29 DOI: 10.1016/j.microrel.2026.116035

Binrui Xue , Ying Wei , Mingzhu Xun , Dan Zhang , Xiaowen Liang , Jiaxing Wang , Jingyi Xu , Jie Feng , Xuefeng Yu , Lin Wen , Qi Guo , Yudong Li

This study investigates the gate oxide reliability of silicon carbide (SiC) power MOSFETs irradiated by protons of three different energies, without inducing SEB. The results show that proton irradiation-induced latent damage in the gate oxide leads to a significant decrease in gate oxide breakdown voltage. As proton energy increases, the degradation of the device's gate oxide breakdown characteristics becomes more severe. After 300 MeV proton irradiation, the gate oxide breakdown voltage of the device approaches the gate's rated voltage. Monte Carlo simulations were used to calculate the equivalent Total Ionizing Dose (TID) and Displacement Damage Dose (DDD) for protons of different energies, along with the types, energies, and Linear Energy Transfer (LET) of the generated secondary particles. The analysis suggests that the latent damage in the SiC MOSFET gate oxide is primarily caused by secondary particles. Higher proton energy results in greater LET and range of secondary particles, leading to more severe latent damage within the device's gate oxide layer and, consequently, more significant degradation of gate oxide reliability.

本研究研究了三种不同能量的质子辐照下碳化硅（SiC）功率mosfet的栅极氧化物可靠性。结果表明，质子辐照引起的栅极氧化物的潜在损伤导致栅极氧化物击穿电压显著降低。随着质子能量的增加，器件栅极氧化物击穿特性的退化变得更加严重。300 MeV质子辐照后，器件栅极氧化物击穿电压接近栅极额定电压。利用蒙特卡罗模拟计算了不同能量质子的等效总电离剂量（TID）和位移损伤剂量（DDD），以及产生的二次粒子的类型、能量和线性能量传递（LET）。分析表明，SiC MOSFET栅极氧化物的潜在损伤主要是由二次粒子引起的。较高的质子能量导致更大的LET和二次粒子范围，导致器件栅氧化层内更严重的潜在损伤，从而导致栅氧化可靠性的更显著降低。

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引用次数: 0

Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile 汽车任务工况下高频功率循环对SiC功率模块寿命的影响

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-01-28 DOI: 10.1016/j.microrel.2026.116037

Bernardo Cougo , Israel Divan , Duc-Hoan Tran , Lenin M. F. Morais , Vitor Araujo , Renata Oliveira de Sousa , Marina Labalette , Valeria Rustichelli , Caio C. O. Mendes , Bruno Condamin , Fabio Coccetti

SiC MOSFETs have higher thermal impedance compared to their Silicon counterparts for same rated power. For that reason, when used in AC/DC or DC/AC applications, they may suffer from temperature variation as high as 40 K at frequencies close to 50 Hz. This temperature variation, induced by Power Cycling, may reduce lifetime of power modules using SiC transistors, which was not the case for Silicon based power modules. These high frequency power cycles are indeed poorly modelled and rarely considered in lifetime estimation model of SiC power modules. This paper presents the procedure to take into account these high frequency power cycles when estimating SiC power module lifetime using automotive mission profile. The mission profile is used to create representative current waveforms flowing through the power module for the entire mission. Thus, instantaneous SiC die temperature (averaged in each switching period) is calculated based on precise instantaneous loss estimation coupled with accurate thermal impedance model. The result is a junction temperature profile which contains power cycles at the same frequency of the sinusoidal current flowing through the SiC die. The influence of such “high frequency” power cycles in the total lifetime of a SiC power module is then demonstrated using lifetime models found in literature. Results show that, using classical lifetime models, SiC power module lifetime can be overestimated by more than 10 times if such high frequency power cycles are not taken into account.

在相同的额定功率下，SiC mosfet与硅mosfet相比具有更高的热阻抗。因此，当在AC/DC或DC/AC应用中使用时，它们可能在接近50 Hz的频率下遭受高达40 K的温度变化。这种由功率循环引起的温度变化可能会减少使用SiC晶体管的功率模块的寿命，而硅基功率模块则不会出现这种情况。在SiC功率模块的寿命估计模型中，这些高频功率周期的建模确实很差，很少考虑。本文介绍了在使用汽车任务剖面估计SiC功率模块寿命时考虑这些高频功率周期的程序。任务轮廓用于创建贯穿整个任务的电源模块的代表性电流波形。因此，基于精确的瞬时损耗估计和精确的热阻抗模型，可以计算出SiC芯片的瞬时温度（每个开关周期的平均值）。其结果是结温曲线，其中包含与流过SiC芯片的正弦电流相同频率的功率周期。这种“高频”功率周期对SiC功率模块总寿命的影响，然后使用文献中的寿命模型进行了演示。结果表明，使用经典寿命模型，如果不考虑高频功率周期，SiC功率模块寿命可能高估10倍以上。

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引用次数: 0

Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching 硬关断过程中重复过电压应力导致p-GaN hemt的永久性退化

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-01-27 DOI: 10.1016/j.microrel.2026.116024

Thomas Vadebout , Pascal Bevilacqua , Valeria Rustichelli , Maroun Alam , Laurence Allirand , Hervé Morel

This study investigates the long-term impact of dynamic overvoltage stress on GaN HEMTs using a newly designed test circuit, UIS3, a variant of classic UIS, which isolates key stress factors. Devices were subjected to short-duration repetitive overvoltage stress near and below their dynamic breakdown voltage. Characterization before and after stress reveals permanent degradation in

C_{D S}

,

I_{D S S}

and

I_{G S S}

, suggesting deep-trapping or structural damage within the device. A distinct alteration in the

C_{D S}

curve is observed, may indicate less spreading of the electric-field within the device.

R_{D S, o n}

degradation is also noted, likely due to trapping effects, with partial recovery at room temperature. Higher stress levels accelerate failure. Waveform analysis and post-failure characterization indicate a short-circuit failure mode, likely due to partial dielectric breakdown during overvoltage events. These results provide new insights into GaN HEMT degradation mechanisms under high-voltage stress.

本研究使用新设计的测试电路UIS3（经典UIS的一种变体）研究了动态过电压应力对GaN hemt的长期影响，该电路可隔离关键应力因素。器件在其动态击穿电压附近或以下承受短时间的重复过电压应力。应力前后的表征显示CDS、IDSS和IGSS的永久性退化，表明器件内部存在深度捕获或结构损伤。观察到CDS曲线的明显变化，可能表明电场在器件内的扩散较小。RDS在降解方面也被注意到，可能是由于捕获效应，在室温下部分恢复。更高的压力会加速失败。波形分析和故障后表征表明短路故障模式，可能是由于过电压事件期间部分介电击穿。这些结果为GaN HEMT在高压应力下的降解机制提供了新的见解。

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引用次数: 0

A study of the self-actuation reliability issue in high-power RF MEMS 大功率射频MEMS自驱动可靠性问题研究

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-01-22 DOI: 10.1016/j.microrel.2026.116021

L. Michalas , A. Ngabonziza , G. Stavrinidis , P. Martins , M. Le Baillif , A. Ziaei , G. Konstantinidis

Radio-Frequency Micro-Electro-Mechanical-Systems (RF MEMS) are devices with great potential to support high RF power applications such as airport radars and satellite communications. Considering the high-power operation of RF MEMS, the so-called self-actuation effect constitutes maybe the most fundamental reliability aspect to be addressed. This work aims to present a straightforward experimental study focusing on the self-actuation of bridge type RF MEMS capacitive switches fabricated in shunt configuration and on coplanar waveguide topology. Bearing in mind the already available knowledge in the field, the study presents a direct monitoring of the self-actuation emphasizing on the importance of the RF signal pulsing scheme. The results are analyzed and discussed in conjunction with typical S-parameters and Capacitance-Voltage characteristics and reveal the importance for considering the pulsing scheme, in parallel to other device details, when assessing the power handling capabilities of RF MEMS capacitive switches. In addition, the work demonstrates shunt RF MEMS capacitive switches that (depending on the pulsing scheme) withstand self-actuation from signal that exceed 25 W of RF pulsed power in the X-band.

射频微机电系统（RF MEMS）是一种具有巨大潜力的设备，可支持机场雷达和卫星通信等高射频功率应用。考虑到RF MEMS的高功率工作，所谓的自致动效应可能构成了需要解决的最基本的可靠性方面。这项工作的目的是提出一个简单的实验研究，重点是在分流配置和共面波导拓扑上制造的桥式RF MEMS电容开关的自驱动。考虑到该领域已有的知识，本研究提出了对自驱动的直接监测，强调了射频信号脉冲方案的重要性。结合典型的s参数和电容电压特性对结果进行了分析和讨论，并揭示了在评估RF MEMS电容开关的功率处理能力时，考虑脉冲方案以及其他器件细节的重要性。此外，该工作还演示了分流式RF MEMS电容开关（取决于脉冲方案）可以承受来自x波段超过25 W RF脉冲功率的信号的自致动。

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引用次数: 0

Design of single ended 9T SRAM cell with improved read performance and expanded write margin for aerospace applications 设计单端9T SRAM单元，具有改进的读取性能和扩展的写入余量，用于航空航天应用

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-01-22 DOI: 10.1016/j.microrel.2026.115998

Saloni Bansal, V.K. Tomar

Space radiation including photons, heavy ions, neutrons and α-particles poses significant challenges to the stability and reliability of memory circuits. These high-energy particles can penetrate into the semiconductor materials and interact causing charge deposition and ionization tracks that can lead to data corruption, soft errors, or even permanent failures in extreme cases. As transistor sizes shrink, the integration density of the memory circuits, such as static random-access memory (SRAM) cells increase, making them more susceptible to single-event upsets (SEUs). 6T SRAM cell is more prone to soft errors, where unintended bit flip can occur due to external radiation, resulting in potential reliability issues during memory operations. To mitigate such issues, this paper proposed, a novel radiation hardened 9T SRAM cell to improve soft error rate. The performance of the proposed 9T SRAM cell is evaluated at 45 nm technology node and compared with previously reported SRAM cells, such as 6T, TA8T, 9T, 11T, 10T, 12T, WFC12T, GRNFET9T and PNT9T SRAM cell configurations across a range of supply voltages from 0.5V to 1V. The proposed 9T SRAM cell operates in a single-ended read and write mode and enabling efficient read and write operations. Its read stability shows an improvement by 1.96×/1.83×/1.02×/1.91×/1.02×/1.01×/2.06×/1.43× as compared to conventional 6T, TA8T, 9T, 11T,10T, WFC12T, GRNFET9T and PNT9T SRAM cells, respectively, at 1 V supply voltage. The critical charge in proposed 9T SRAM cell is 2.5×/2.35×/1.14×/1.33×/1.19×/1.08×/2.47×/1.11×/1.11× improved as compared to 6T/TA8T/9T/11T/10T/12T/WFC12T/GRNFET9T/PNT9T SRAM cells. In addition to this, proposed 9T cell has 1.13×/1.06×/1.95×/1.20×/1.04×/1.04×/1.12×/1.05×1.20× less read access time than conv.6T/TA8T/9T/11T/10T/12T/WFC12T GRNFET9T/PNT9T SRAM cells.

Moreover, I_on/I_off ratio in proposed 9T SRAM cell is 3.0×/2.98×/4.26×/3.01×/3.21×/1.13×/3.2×/3.0×/3.42× higher than conv.6T/TA8T/9T/11T/10T/12T/WFC12T/GRNFET9T/PNT9T SRAM cells. The Monte Carlo simulation is conducted with 4000 random samples to analyze the impact of process variations on read power and read current. The overall performance and soft-error resilience of the proposed 9T SRAM cell are investigated with the ratio of reliability and stability to energy product (RSEAP). This highest RSEAP value of proposed 9T SRAM cell makes its suitability for aerospace applications.

包括光子、重离子、中子和α粒子在内的空间辐射对存储电路的稳定性和可靠性提出了重大挑战。这些高能粒子可以渗透到半导体材料中并相互作用，导致电荷沉积和电离轨迹，从而导致数据损坏、软错误，甚至在极端情况下导致永久故障。随着晶体管尺寸的缩小，存储电路（如静态随机存取存储器（SRAM）单元）的集成密度增加，使它们更容易受到单事件干扰（seu）的影响。6T SRAM单元更容易发生软错误，其中由于外部辐射可能发生意外的位翻转，从而导致存储操作期间潜在的可靠性问题。为了解决这些问题，本文提出了一种新型的辐射硬化9T SRAM单元，以提高软错误率。在45 nm技术节点上评估了所提出的9T SRAM电池的性能，并与先前报道的SRAM电池（如6T， TA8T, 9T, 11T, 10T, 12T, WFC12T， GRNFET9T和PNT9T SRAM电池配置）在0.5V至1V的电源电压范围内进行了比较。所提出的9T SRAM单元以单端读写模式运行，实现高效的读写操作。在1 V电压下，与传统的6T、TA8T、9T、11T、10T、WFC12T、GRNFET9T和PNT9T SRAM电池相比，其读取稳定性分别提高了1.96×/1.83×/1.02×/1.91×/1.02×/ 1.06 ×/1.43×。与6T/TA8T/9T/11T/10T/12T/WFC12T/GRNFET9T/PNT9T SRAM电池相比，9T SRAM电池的临界电荷提高了2.5×/2.35×/1.14×/1.33×/1.19×/1.08×/2.47×/1.11×/1.11×。除此之外，所提出的9T单元具有1.13×/1.06×/1.95×/1.20×/1.04×/1.04×/1.12×/1.05×1.20×的读访问时间比con . 6t /TA8T/9T/11T/10T/12T/WFC12T GRNFET9T/PNT9T SRAM单元少。此外，所提出的9T SRAM电池的离子/断比比为3.0×/2.98×/4.26×/3.01×/3.21×/1.13×/3.2×/3.0×/3.42×，高于conv.6T/TA8T/9T/11T/10T/12T/WFC12T/GRNFET9T/PNT9T SRAM电池。利用4000个随机样本进行蒙特卡罗仿真，分析工艺变化对读功率和读电流的影响。利用可靠性、稳定性与能量积比（RSEAP）对所提出的9T SRAM单元的整体性能和软错误弹性进行了研究。所提出的9T SRAM单元的最高RSEAP值使其适合航空航天应用。

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引用次数: 0

Comprehensive assessment of dynamic and static performance of SiC MOSFETs under highly accelerated power cycling conditions 高加速功率循环条件下SiC mosfet的动态和静态性能综合评估

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-01-20 DOI: 10.1016/j.microrel.2026.116012

Xinyu Zhu , Yuan Chen , Pengkai Wang , Hu He

The Power Cycling Tests (PCT) constitute a critical method for assessing the long-term reliability of SiC MOSFETs. Existing studies have primarily focused on the degradation of static characteristic, which are typically measured after the device is interrupted from normal operation, thereby precluding the real-time monitoring of the aging process. Given the widespread use of SiC MOSFETs in circuit switching, investigating the degradation of their dynamic characteristics is essential for accurately simulating actual performance. This study comprehensively evaluates the changes in the dynamic and static characteristics of devices before and after PCT, encompassing the variations of gate leakage current, drain leakage current, threshold voltage, on-resistance, and junction capacitances (C_iss, C_oss, and C_rss), as well as switching parameters and turn-on waveforms, to analyze the degradation mechanisms. Additionally, the analysis of capacitances variations facilitated the investigation into charge injection into the gate oxide layer. The findings offer new insights into early indicators of device degradation.

功率循环测试（PCT）是评估SiC mosfet长期可靠性的关键方法。现有的研究主要集中在静态特性的退化上，这通常是在设备中断正常运行后测量的，因此无法实时监测老化过程。鉴于SiC mosfet在电路开关中的广泛应用，研究其动态特性的退化对于准确模拟实际性能至关重要。本研究综合评价PCT前后器件的动静态特性的变化，包括栅极漏电流、漏极漏电流、阈值电压、导通电阻、结电容（Ciss、Coss、Crss）、开关参数和导通波形的变化，分析其退化机理。此外，对电容变化的分析有助于对栅氧化层电荷注入的研究。这些发现为设备退化的早期指标提供了新的见解。

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引用次数: 0

Research on the degradation mechanism of the electrical properties of hydrogen-terminated diamond MOS devices under X-ray irradiation x射线辐照下端氢金刚石MOS器件电性能退化机理研究

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-02-03 DOI: 10.1016/j.microrel.2026.116026

Kejia Wang , Zhendong Zhang , Fugui Zhou , Genhao Liang , Yuwei Fan , Lishan Zhao , Yaqing Chi

Hydrogen-terminated diamond MOS devices exhibit significant potential for space electronics applications due to their ultra-wide bandgap and radiation resistance. However, the degradation mechanism of device performance under X-ray total ionizing dose (TID) effects remains unclear. This study employed TCAD simulations to systematically investigate the influence of X-ray irradiation doses ranging from 0 to 50 MGy on the transport properties of the two-dimensional hole gas (2DHG) and electrical characteristics of the devices. Results indicated that with increasing irradiation dose, the saturation drain current and leakage current decreased, while the threshold voltage shifted negatively. This phenomenon is primarily attributed to trapped charges generated by TID effects, which impair the unique 2DHG transport properties in hydrogen-terminated diamond devices. Under high-dose conditions, hydrogen-terminated diamond MOS devices demonstrate superior radiation resistance compared to Si-based and other wide-bandgap semiconductor devices. This research provides a critical theoretical foundation for radiation-hardened design of aerospace-grade diamond devices.

氢端金刚石MOS器件由于其超宽带隙和抗辐射性能，在空间电子应用中表现出巨大的潜力。然而，在x射线总电离剂量（TID）效应下，器件性能的退化机制尚不清楚。本研究采用TCAD模拟系统地研究了0 ~ 50 MGy x射线辐照剂量对二维空穴气体（2DHG）输运性质和器件电特性的影响。结果表明，随着辐照剂量的增加，饱和漏极电流和泄漏电流减小，阈值电压负移；这种现象主要是由于TID效应产生的捕获电荷破坏了端氢金刚石器件中独特的2DHG输运性质。在高剂量条件下，与硅基和其他宽带隙半导体器件相比，氢端金刚石MOS器件表现出优越的抗辐射能力。该研究为航空级金刚石器件的抗辐射硬化设计提供了重要的理论基础。

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引用次数: 0

Reinforcement learning-based weighting factors auto-tuning for thermal management in assembled inverters 基于强化学习的组合逆变器热管理加权因子自动调谐

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-02-02 DOI: 10.1016/j.microrel.2026.116039

Cen Chen, Junping Wei, Chenyi Wang, Kaiwen Xiao, Zhenning Zhou, Haodong Wang

For three phase inverters, power semiconductor device MOSFET is the most sensitive component to failure which affects the reliability of the inverters directly. Through previous research on failure physical models, the junction temperature swing will mainly affect the remaining useful life of the MOSFET. Active thermal management is an effective way to control the temperature swing of control components. This paper proposes an optimized model predictive control for thermal management, which is achieved by suppressing overall system losses and focusing on vulnerable components, effectively suppressing the maximum junction temperature swing of the system. Afterwards, the reinforcement learning is used for weighting factors auto-tuning. The proposed method verified through experiment can effectively achieve balanced optimization of inverter life and performance and improve the reliability of the inverter system.

对于三相逆变器来说，功率半导体器件MOSFET是最敏感的失效元件，直接影响逆变器的可靠性。通过对失效物理模型的研究，结温摆动主要影响MOSFET的剩余使用寿命。主动热管理是控制控制元件温度波动的有效方法。本文提出了一种优化的热管理模型预测控制，通过抑制系统整体损耗和关注易损件，有效地抑制了系统的最大结温摆动。然后利用强化学习对权重因子进行自整定。通过实验验证，所提出的方法可以有效地实现逆变器寿命和性能的平衡优化，提高逆变器系统的可靠性。

引用次数: 0

In-situ study on the electrochemical migration behavior of Ag and Sn in halogen media Ag和Sn在卤素介质中电化学迁移行为的原位研究

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-03-01 Epub Date: 2026-01-23 DOI: 10.1016/j.microrel.2026.116015

Guo Yu , Wei Dai , Yixing Lu , Yue Zhen , Jin Li , Yiming Jiang , Yangting Sun

This study systematically investigates the electrochemical migration (ECM) behaviors of Ag and Sn in halogen media (NaX, where X = Cl, Br, I). The results indicate that Ag forms conductive dendrites in low-concentration NaX. Sn forms dendrites in NaCl and NaBr environments, but shows negligible ECM in NaI. A decrease in halide ion concentration results in a reduced corrosion rate. However, at a higher halide ion concentration, the precipitation of AgX compounded during the ECM obstructs ion migration. In-situ observations clearly recorded the growth of dendrites and the formation of the precipitate layer (barrier).

本研究系统地研究了银和锡在卤素介质（NaX，其中X = Cl, Br， I）中的电化学迁移行为。结果表明，Ag在低浓度NaX中形成导电枝晶。Sn在NaCl和NaBr环境中形成枝晶，但在NaI环境中表现出可以忽略不计的ECM。卤化物离子浓度的降低导致腐蚀速率的降低。然而，在较高的卤化物离子浓度下，电解过程中复合AgX的沉淀阻碍了离子的迁移。现场观察清楚地记录了枝晶的生长和沉淀层（屏障）的形成。

引用次数: 0