Microelectronics Reliability最新文献_第3页

Investigation of thermal efficiency of recessed Γ gate over Γ gate, T gate and rectangular gate AlGaN/GaN HEMT on BGO substrate 研究 BGO 基底面上凹Γ栅相对于Γ栅、T 栅和矩形栅 AlGaN/GaN HEMT 的热效率

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-23 DOI: 10.1016/j.microrel.2024.115522

Preethi Elizabeth Iype , V. Suresh Babu , Geenu Paul

High electron mobility transistors (HEMTs) based on a wider bandgap AlGaN channel prove more efficient for high-voltage operation. The significant advantages of AlGaN channel HEMTs include a high critical electric field and higher saturation velocity. These characteristics contribute substantially to expanding the operating regime of power electronics, making them more suitable for applications requiring high voltage. This research work introduces a novel structure for a HEMT based on AlGaN/GaN with a recessed Gamma (Γ)-gate. The proposed HEMTs are composed of a 30 nm supply/barrier layer and an 18 nm channel layer, constructed on a Beta Gallium Oxide (BGO) substrate. Additionally, a delta-doped layer is incorporated to enhance device characteristics. The Direct Current (DC) features of the introduced scheme are compared with those of Γ-gate, rectangular and T-gate configurations, and analyzed using Silvaco TCAD software under various considerations. Key parameters including threshold voltage and transconductance are extracted from the DC characteristics. The proposed device provides a comparable cut-off frequency of 998 GHz for 20 nm gate length. Finally, the thermal efficiency of the introduced scheme, utilizing lateral lattice thermal conductivity, results in peak temperatures of 398.2 K, demonstrating superior performance compared to existing gate structures. The optimized performance of the device is assessed against existing devices, demonstrating its superiority among the compared schemes.

事实证明，基于更宽带隙氮化铝沟道的高电子迁移率晶体管（HEMT）能更有效地实现高压运行。氮化铝沟道 HEMT 的显著优势包括临界电场高和饱和速度高。这些特性大大有助于扩大电力电子器件的工作范围，使其更适合需要高压的应用。这项研究工作介绍了一种基于 AlGaN/GaN 的 HEMT 的新型结构，它具有凹陷的伽马 (Γ) 栅极。所提出的 HEMT 由 30 nm 电源/势垒层和 18 nm 沟道层组成，构建在 Beta 氧化镓 (BGO) 衬底上。此外，还加入了一个三角掺杂层，以增强器件特性。我们将引入方案的直流 (DC) 特性与Γ栅极、矩形栅极和 T 型栅极配置的特性进行了比较，并使用 Silvaco TCAD 软件在各种考虑因素下进行了分析。从直流特性中提取了包括阈值电压和跨导在内的关键参数。在栅极长度为 20 nm 的情况下，拟议器件的截止频率可达 998 GHz。最后，利用横向晶格热传导，引入方案的热效率可使峰值温度达到 398.2 K，与现有的栅极结构相比，表现出更优越的性能。根据现有器件对该器件的优化性能进行了评估，结果表明该器件在各种比较方案中更胜一筹。

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引用次数: 0

Influence of different vibration directions on the solder layer fatigue in IGBT modules 不同振动方向对 IGBT 模块焊接层疲劳的影响

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-22 DOI: 10.1016/j.microrel.2024.115526

Yifan Jian, Shinian Peng, Zhi Chen, Zhengxi He, Liang He, Xinzhi Lv

Insulated-gate bipolar transistor (IGBT) modules are extensively utilized in high-speed trains, ships, and electric vehicles. Compared to those used in power systems, IGBT modules in these applications are more susceptible to vibration effects on their reliability. This paper proposes a multi-physics field simulation method and a lifetime model for IGBT modules to assess the impact of different vibration directions on solder layer fatigue. Initially, a multi-physics field model of the IGBT module is developed, incorporating electrical, thermal, mechanical, and vibration coupling. The effectiveness of this multi-physics simulation model is verified by an experimental platform. Subsequently, the influence of different vibration directions on solder layer fatigue in the IGBT module is analysed, and a life model of the IGBT is proposed through simulation. Finally, a power cycling with a vibration environment experimental platform is established to validate the effect of vibration on solder layer fatigue in the IGBT module. The simulation and experimental results indicate that vertical vibration accelerates the solder layer fatigue of IGBT modules, and the lifetime of an IGBT module operating under vertical vibration at 30 Hz is about 15 % shorter than that of an IGBT module operating under power cycling alone. The error between the calculated results of the solder layer failure and the experimental result is <5 %.

绝缘栅双极晶体管 (IGBT) 模块广泛应用于高速列车、船舶和电动汽车。与电力系统中使用的 IGBT 模块相比，这些应用中的 IGBT 模块更容易受到振动对其可靠性的影响。本文提出了 IGBT 模块的多物理场仿真方法和寿命模型，以评估不同振动方向对焊接层疲劳的影响。首先，开发了一个 IGBT 模块的多物理场模型，其中包含电气、热、机械和振动耦合。该多物理场仿真模型的有效性通过实验平台进行了验证。随后，分析了不同振动方向对 IGBT 模块焊接层疲劳的影响，并通过仿真提出了 IGBT 的寿命模型。最后，建立了一个具有振动环境的功率循环实验平台，以验证振动对 IGBT 模块焊层疲劳的影响。仿真和实验结果表明，垂直振动加速了 IGBT 模块的焊料层疲劳，在 30 Hz 垂直振动下工作的 IGBT 模块的寿命比仅在功率循环下工作的 IGBT 模块短约 15%。焊料层失效的计算结果与实验结果之间的误差为 5%。

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引用次数: 0

A SEGR hardened trench gate DMOS with stepped source and optimized LOCOS structure 具有阶跃源极和优化 LOCOS 结构的 SEGR 加硬沟道栅 DMOS

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-21 DOI: 10.1016/j.microrel.2024.115525

Yanfei Zhang , Xueqin Gong , Mengxin Liu , Xiaoxia Wen , Xiaowu Cai

When irradiation experiment with heavy ions is carried out, Single-Event Gate Rupture (SEGR) is found for the conventional trench-gate DMOS (TG-DMOS) with LOCOS (Local Oxidation of Silicon). FIB analysis show that the failure spot is at the corner of the trench, which is the weakest point of the trench. In this paper, a SEGR hardened TG-DMOS with stepped source and optimized LOCOS structure is proposed. Stepped source is adopted to obtain a narrow base region and less voltage drop when the minority holes travel through the base region, which alleviates the electric field in the trench corner. Optimized LOCOS structure includes local oxidation area not only at the bottom of the gate trench but also at partial sidewall of the trench near the corner, protecting the trench corner and have no effect on the electrical characteristic. For the proposed structure, simulation shows that the peak electric field in the gate oxide is 3.8 MV/cm, which is almost half of the conventional TG-DMOS, and SEGR performance could be improved effectively.

在用重离子进行辐照实验时，发现带有硅局部氧化（LOCOS）的传统沟槽栅DMOS（TG-DMOS）出现了单事件栅极破裂（SEGR）。FIB 分析表明，失效点位于沟道的拐角处，这是沟道的最薄弱点。本文提出了一种具有阶梯源和优化 LOCOS 结构的 SEGR 加硬 TG-DMOS 。采用阶跃源可以获得较窄的基底区，当少数空穴穿过基底区时，压降较小，从而减轻沟道角的电场。优化的 LOCOS 结构不仅包括栅极沟槽底部的局部氧化区，还包括沟槽靠近拐角处的部分侧壁，从而保护了沟槽拐角，并且对电气特性没有影响。仿真结果表明，对于所提出的结构，栅极氧化物中的峰值电场为 3.8 MV/cm，几乎是传统 TG-DMOS 的一半，SEGR 性能可以得到有效改善。

引用次数: 0

Study of the characteristics and growth of tin whiskers in orbit 研究轨道上锡须的特性和生长情况

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-21 DOI: 10.1016/j.microrel.2024.115523

Shinichiro Ichimaru , Tsuyoshi Nakagawa , Norio Nemoto , Katsuaki Suganuma , Hiroaki Tatsumi , Hiroshi Nishikawa

To confirm the applicability of tin-based lead-free parts in satellites, we validated the growth characteristics of tin whiskers in orbit. The result was that the tin whiskers generated on the in-orbit samples grew thin, long, and straight. The longest tin whisker observed in the in-orbit samples was approximately 767 μm. There were fine striation rings on the side face of the tin whisker in the in-orbit samples. This characteristic is the tin whiskers generated by thermal cycling. In addition, the growth characteristics of tin whiskers in orbit and on the ground in air differed. However, tin whiskers in orbit and on the ground in a vacuum exhibited the same growth characteristics. These results indicate that thermal cycling and vacuum (i.e., no oxygen) significantly influence the growth and shape of tin whiskers in orbit. Cross-sectional scanning electron microscope showed that on the in-orbit samples, the tin plating grains were neatly arranged, and no deep grooves along the tin plating grain boundaries were identified; whereas, on the ground in air, the tin plating grain boundaries were cracked, and the interfaces with adjacent grains were separated. Therefore, tin atoms diffused more easily in orbit because of the fine alignment of the tin plating grains; many very long tin whiskers were generated in orbit.

为了证实锡基无铅部件在卫星上的适用性，我们验证了锡须在轨道上的生长特性。结果表明，在轨样品上生成的锡须生长得细、长、直。在轨样品中观察到的最长锡须约为 767 微米。在轨样品中，锡须的侧面有细小的条纹环。这一特征是热循环产生的锡须。此外，轨道上的锡须和地面上的锡须在空气中的生长特征也有所不同。然而，轨道上和地面真空中的锡须表现出相同的生长特征。这些结果表明，热循环和真空（即无氧）对轨道上锡晶须的生长和形状有很大影响。横截面扫描电子显微镜显示，在轨样品上，镀锡晶粒排列整齐，沿镀锡晶界没有发现深槽；而在地面空气中，镀锡晶界开裂，与相邻晶粒的界面分离。因此，由于镀锡晶粒排列整齐，锡原子在轨道上更容易扩散；在轨道上产生了许多很长的锡须。

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引用次数: 0

A novel methodology for vibration induced fatigue life assessment of BGA devices in avionics systems of satellite launch vehicles 卫星运载火箭航空电子系统中 BGA 器件的振动诱发疲劳寿命评估新方法

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-19 DOI: 10.1016/j.microrel.2024.115524

Janmejay Jaiswal, Vijay Kumar Sen, Amarnath Nandi

A new PCB strain-based methodology for BGA fatigue damage assessment, during system level vibration analysis, is established. The Stress-Life curve for solder joints (Sn37Pb), extracted by FE modelling from peer-reviewed data, is utilized as the damage thresholds instead of traditionally used empirical criteria. To eliminate the modelling effort and resource intensive computations associated with solder joint stress calculations, a correlation between the PCB strain and device solder joint stress is established. Harmonic vibration analysis of PCBs with 3 different sizes, 2 boundary conditions, and different device locations are utilized for this purpose. A novel device and PCB model simplification technique, which does not affect PCB strain results, is also proposed. The methodology is demonstrated for fatigue life assessment of BGA device in a launch vehicle avionics package, under random vibration environment. Subsequently, design improvement to meet the fatigue life requirement is also suggested. Fatigue life is calculated using three different stress cycles estimation models namely Dirlik, Single Moment, and Steinberg's 3-band method, and Single Moment method is found to be most appropriate.

在系统级振动分析过程中，建立了一种新的基于 PCB 应变的 BGA 疲劳损坏评估方法。从同行评议数据中通过 FE 建模提取的焊点（Sn37Pb）应力-寿命曲线被用作损伤阈值，而不是传统使用的经验标准。为了消除与焊点应力计算相关的建模工作和资源密集型计算，建立了印刷电路板应变与器件焊点应力之间的相关性。为此，对具有 3 种不同尺寸、2 种边界条件和不同器件位置的印刷电路板进行了谐振分析。此外，还提出了一种不会影响 PCB 应变结果的新型器件和 PCB 模型简化技术。在随机振动环境下，对运载火箭航空电子设备封装中的 BGA 器件进行疲劳寿命评估时，演示了该方法。随后，还提出了满足疲劳寿命要求的设计改进建议。疲劳寿命的计算采用了三种不同的应力循环估算模型，即 Dirlik 法、单动量法和 Steinberg 的 3 波段法，其中单动量法最为合适。

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引用次数: 0

Aging resilient ring oscillators for reliable Physically Unclonable Functions (PUFs) 用于可靠的物理不可克隆函数（PUF）的抗老化环形振荡器

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-15 DOI: 10.1016/j.microrel.2024.115520

M. Omaña , M. Grossi , D. Rossi , C. Metra

Physically Unclonable Functions (PUFs) are a promising low-cost solution for authentication and key generation in cryptosystems. However, it has been shown in the literature that, due to aging mechanisms such as Bias Temperature Instability (BTI), PUFs may no longer be able to generate correct outputs after a certain lifetime, thus becoming unreliable. In order to mitigate this problem, we present a novel ring oscillator (RO) based PUF design that is highly robust against BTI degradation. It will be hereinafter referred to as Highly BTI Resilient RO – HBTIRRO. In particular, we present two possible implementations for our HBTIRRO, each one corresponding to a different tradeoff among robustness against BTI, power consumption and area occupation. We compare the effectiveness and costs of the two proposed HBTIRRO implementations to those of a standard RO, and of the most recent alternative solution presented in the literature. We show that, one of our HBTIRRO implementation features the highest robustness against BTI, enabling a reduction in frequency degradation of 57.2 % and 34.6 % with respect to the standard RO and the recent alternate solution, respectively, while requiring a similar area and some increase in power consumption. The other implementation of our HBTIRRO features a very low cost in terms of area occupation, while featuring a robustness against BTI that is comparable to the most recent alternative solution presented in the literature. Moreover, we show that, compared to both the considered alternative solutions, our two HBTIRRO implementations present similar or higher (i.e., better) values in the three classical PUF figures of merit (namely, uniqueness, reliability and randomness), and the highest standard deviation in the statistical distribution of the oscillation frequency resulting from process variation. Therefore, our two proposed HBTIRRO offer also a more secure implementation for RO-based PUF than the compared solutions.

物理不可克隆函数（PUF）是密码系统中用于验证和密钥生成的一种前景广阔的低成本解决方案。然而，文献显示，由于偏置温度不稳定性（BTI）等老化机制，PUF 在一定寿命后可能不再能生成正确的输出，从而变得不可靠。为了缓解这一问题，我们提出了一种基于环形振荡器（RO）的新型 PUF 设计，它对 BTI 退化具有很强的鲁棒性。以下简称为 "高 BTI 抗扰度环振荡器"（HBTIRRO）。我们特别介绍了 HBTIRRO 的两种可能实现方法，每种方法都对应于 BTI 鲁棒性、功耗和面积占用之间的不同权衡。我们将两种拟议的 HBTIRRO 实现方案的有效性和成本与标准 RO 以及文献中最新的替代解决方案进行了比较。我们的研究表明，我们的一种 HBTIRRO 实现方法对 BTI 具有最高的鲁棒性，与标准 RO 和最新的替代解决方案相比，频率衰减分别减少了 57.2% 和 34.6%，但所需面积相似，功耗略有增加。我们的 HBTIRRO 的另一种实现方法在面积占用方面成本非常低，同时对 BTI 的鲁棒性可与文献中最新的替代解决方案相媲美。此外，我们的研究还表明，与上述两种替代方案相比，我们的两种 HBTIRRO 实现方案在三个经典 PUF 性能指标（即唯一性、可靠性和随机性）方面具有相似或更高的值（即更好的值），并且在流程变化导致的振荡频率统计分布方面具有最高的标准偏差。因此，我们提出的两种 HBTIRRO 方案与其他方案相比，也能更安全地实现基于 RO 的 PUF。

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引用次数: 0

Soft error analysis on junctionless ringFET structures and junctionless ringFET-based inverter circuits using numerical device modeling 利用数值器件建模对无结环形场效应晶体管结构和基于无结环形场效应晶体管的逆变器电路进行软误差分析

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-14 DOI: 10.1016/j.microrel.2024.115521

Ramya M., Nagarajan K.K.

The performance of junctionless ringFETs under heavy ion irradiation is investigated utilizing 3D TCAD simulations. The vulnerable location of the ringFET device is identified by conducting a single-event transient analysis on the interaction of an ionizing particle, particularly a heavy ion, with various LET values. The analysis focused on both the inner and outer drain configurations. The drain region is the most vulnerable location in an inner drain configuration, whereas the channel near the drain region is the most vulnerable location in an outer drain configuration of a junctionless ringFET. The source region of a junctionless ringFET is the least vulnerable location in both the inner and outer drain configurations. An Inverter circuit built using junctionless ringFETs utilizing inner and outer drain configurations is also subjected to single-event transient analysis. The junctionless ringFET with an inner drain configuration is better for use in areas where radiation is a concern since its collected charge is lower than that of the outer drain configuration.

利用三维 TCAD 仿真研究了无结环形场效应晶体管在重离子辐照下的性能。通过对不同 LET 值的电离粒子（尤其是重离子）的相互作用进行单事件瞬态分析，确定了环形场效应晶体管器件的易损位置。分析的重点是内部和外部漏极配置。在无结环形场效应晶体管的内漏极配置中，漏极区是最脆弱的位置，而在外漏极配置中，漏极区附近的沟道则是最脆弱的位置。在内漏极和外漏极配置中，无结环型场效应晶体管的源极区都是最不脆弱的位置。使用无结环形场效应晶体管（采用内漏极和外漏极配置）构建的逆变器电路也要进行单事件瞬态分析。由于内漏极结构的无结环形场效应晶体管收集的电荷比外漏极结构的低，因此更适合在有辐射问题的地区使用。

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引用次数: 0

Non-destructive fault diagnosis of electronic interconnects by learning signal patterns of reflection coefficient in the frequency domain 通过学习频域反射系数信号模式对电子互连器件进行非破坏性故障诊断

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-14 DOI: 10.1016/j.microrel.2024.115518

Tae Yeob Kang , Haebom Lee , Sungho Suh

Fault detection and diagnosis of the interconnects are crucial for prognostics and health management (PHM) of electronics. Traditional methods, which rely on electronic signals as prognostic factors, often struggle to accurately identify the root causes of defects without resorting to destructive testing. Furthermore, these methods are vulnerable to noise interference, which can result in false alarms. To address these limitations, in this paper, we propose a novel, non-destructive approach for early fault detection and accurate diagnosis of interconnect defects, with improved noise resilience. Our approach uniquely utilizes the signal patterns of the reflection coefficient across a range of frequencies, enabling both root cause identification and severity assessment. This approach departs from conventional time-series analysis and effectively transforms the signal data into a format suitable for advanced learning algorithms. Additionally, we introduce a novel severity rating ensemble learning (SREL) approach, which enhances diagnostic accuracy and robustness in noisy environments. Experimental results demonstrate that the proposed method is effective for fault detection and diagnosis and has the potential to extend to real-world industrial applications.

互连的故障检测和诊断对于电子产品的预报和健康管理 (PHM) 至关重要。传统方法依赖电子信号作为预报因素，往往难以在不进行破坏性测试的情况下准确识别缺陷的根本原因。此外，这些方法容易受到噪声干扰，从而导致误报。为了解决这些局限性，我们在本文中提出了一种新型的非破坏性方法，用于早期故障检测和互连缺陷的精确诊断，并提高了抗噪声能力。我们的方法独特地利用了反射系数在一定频率范围内的信号模式，从而实现了根本原因识别和严重性评估。这种方法有别于传统的时间序列分析，能有效地将信号数据转换为适合高级学习算法的格式。此外，我们还引入了一种新颖的严重性评级集合学习（SREL）方法，该方法提高了诊断的准确性和在嘈杂环境中的鲁棒性。实验结果表明，所提出的方法能有效地进行故障检测和诊断，并有可能推广到现实世界的工业应用中。

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引用次数: 0

First-principles study of Ni additions on mechanical properties of η'-Cu6Sn5-based intermetallic compound 添加镍对η'-Cu6Sn5 金属间化合物力学性能的第一性原理研究

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-08 DOI: 10.1016/j.microrel.2024.115514

Jinye Yao , Shihao Guo , Li Wang , Min Shang , Xiangxu Chen , Haoran Ma , Yunpeng Wang , Haitao Ma

Amorphous NiP layers have been employed as barrier layers to regulate the formation and growth of intermetallic compounds (IMCs) within industrial contexts. The doping of Ni atoms into the crystal structure of η'-Cu₆Sn₅ resulted in the formation of the IMC of η'- (Cu,Ni)₆Sn₅. An examination of the mechanical properties of IMCs is crucial for the evaluation of solder joint longevity. Based on first-principles calculations and VRH methods, the bulk modulus, shear modulus and the elastic modulus and hardness values of η'-Cu₆Sn₅, η'-Cu_5.75Ni_0.25Sn₅, η'-Cu_5.5Ni_0.5Sn₅ and η'-Cu_5.25Ni_0.75Sn₅ IMCs were analyzed, which showed that η'- (Cu,Ni)₆Sn₅ possessed a stronger anisotropy and hardness. The K_IC of all η'-Cu₆Sn₅-based IMCs are 1.830, 1.933, 1.961, and 1.960, respectively, indicating that the doping of Ni atoms into the η'-Cu₆Sn₅ cells can favourably affect their mechanical properties reducing the likelihood of microcracking at the interface during use and increasing the shear resistance of the joint. The thermodynamic disorder parameter (TDOS) for all η'-Cu₆Sn₅-based IMCs is primarily influenced by the Sn-s and Cu-d states, which exhibit metallic properties. It has been demonstrated that the compound η'- (Cu,Ni)₆Sn₅ is more stable than the compound η'-Cu₆Sn₅. This phenomenon can be attributed to the formation of robust covalent bonds between the Ni atoms and their neighbouring Cu and Sn atoms, which occurs when Ni atoms are doped. The findings of this research can serve as a valuable reference point and theoretical foundation for future applications of NiP barrier layers in soldering.

无定形镍磷层已被用作阻挡层，用于调节工业环境中金属间化合物（IMC）的形成和生长。在 η'-Cu6Sn5 晶体结构中掺入 Ni 原子后，形成了 η'-(Cu,Ni)6Sn5 的 IMC。检查 IMC 的机械性能对于评估焊点寿命至关重要。基于第一原理计算和 VRH 方法，分析了 η'-Cu6Sn5、η'-Cu5.75Ni0.25Sn5、η'-Cu5.5Ni0.5Sn5 和 η'-Cu5.25Ni0.75Sn5 IMC 的体积模量、剪切模量、弹性模量和硬度值，结果表明 η'- (Cu,Ni)6Sn5 具有更强的各向异性和硬度。所有基于 η'-Cu6Sn5 的 IMC 的 KIC 分别为 1.830、1.933、1.961 和 1.960，这表明在 η'-Cu6Sn5 单元中掺入镍原子会对其机械性能产生有利影响，降低使用过程中界面微裂纹的可能性，并提高接头的抗剪性能。所有基于 η'-Cu6Sn5 的 IMC 的热力学无序参数（TDOS）主要受 Sn-s 和 Cu-d 态的影响，这两种态具有金属特性。研究表明，η'- (Cu,Ni)6Sn5化合物比η'-Cu6Sn5化合物更稳定。这一现象可归因于掺入镍原子后，镍原子与其相邻的铜原子和锡原子之间形成了牢固的共价键。本研究的发现可为今后在焊接中应用 NiP 阻挡层提供有价值的参考点和理论基础。

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引用次数: 0

A novel multi-information fusion CNN for defect detection in laser soldering of SAC305 用于 SAC305 激光焊接缺陷检测的新型多信息融合 CNN

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2024-10-08 DOI: 10.1016/j.microrel.2024.115519

Wei Wang , Hongyun Zhao , Biao Yang , Fuyun Liu , Lianfeng Wei , Zengqiang Niu , Guojie Lu , Qiao Wang , Xiaoguo Song , Caiwang Tan

Identification of laser soldering of lead-free solder Sn-3.0Ag-0.5Cu (SAC305) in electronic packaging was still an enormous challenge. It was difficult to detect defects in large-scale production. This work proposed an identification model based on multi-information fusion convolutional neural network (MIFCNN) for inspecting laser soldering process. In this method, the forty images in chronological order and the temperature data were combined as the input to be utilized in detecting defects. The results demonstrated that MIFCNN had best accuracy for three types of joints with accuracy of 98.28 % due to the combination of images and temperature information. The ICNN and TCNN had poor recognition accuracy for the warpage defect with 73.9 % and the poor wetting defect with 66.5 %, respectively. This was because the images and temperature information were the key to identifying the poor wetting defects and warpage defects, respectively. The poor wetting defect could be recognized by difference of contact angle, while the warpage defect could be significantly detected by maximum temperature. This work could help detecting defects of laser soldering in the actual production and widen the application of MIFCNN in the field of laser soldering.

电子封装中无铅焊料 Sn-3.0Ag-0.5Cu (SAC305) 的激光焊接鉴定仍是一项巨大的挑战。在大规模生产中很难检测到缺陷。这项工作提出了一种基于多信息融合卷积神经网络（MIFCNN）的识别模型，用于检测激光焊接过程。在该方法中，按时间顺序排列的 40 幅图像与温度数据相结合，作为检测缺陷的输入。结果表明，由于结合了图像和温度信息，MIFCNN 对三种类型焊点的准确率最高，达到 98.28%。而 ICNN 和 TCNN 对翘曲缺陷的识别准确率较低，分别为 73.9 % 和 66.5 %。这是因为图像和温度信息分别是识别润湿不良缺陷和翘曲缺陷的关键。润湿不良缺陷可通过接触角的差异识别，而翘曲缺陷则可通过最高温度显著识别。这项工作有助于在实际生产中检测激光焊接缺陷，并拓宽了 MIFCNN 在激光焊接领域的应用。

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引用次数: 0