Microelectronics Reliability最新文献_第10页

Accelerated lifetime estimation and failure analysis of micromachined humidity sensors under high temperature and high humidity conditions 高温高湿条件下微机械湿度传感器加速寿命估算及失效分析

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-08-05 DOI: 10.1016/j.microrel.2025.115885

Krisztián Dubek , Christoph Schneidhofer , Nicole Dörr , Harald Rojacz , Bernhard Plank , Ulrich Schmid

Accelerated Life Testing (ALT) is used to detect and understand failure mechanisms, as well as to calculate and evaluate the robustness and resulting reliability of electronic components such as sensors subjected to various influencing factors in different applications. Based on the successful lab and field robustness validation of the customized Humidity Sensor in Axle Bearings (HSAB) system utilized for the condition monitoring of lubricated rail components, an ALT methodology was designed for a micromachined humidity sensor, and respective results are presented. ALT was aimed at quantifying the robustness of the selected sensor under higher-than-normal use environmental loads (temperature and humidity), with a focus on its sensor element. Thus, ALTs under constant high temperatures combined with low- and high-humidity conditions were executed until all the tested sensor elements failed. Thereafter, the resulting failures were investigated using various methods. The solder joint failure of the sensor element was determined as a central failure mode. Based on the data obtained for the time to failure of the sensor elements, a two-parameter Weibull distribution function was fitted, in agreement with comparable scientific works on solder joint failures. As the aged sensor elements themselves did not seem to be significantly influenced or even damaged by the executed ALTs, their existing functionality was proven afterwards. For this purpose, they were first resoldered and then tested using a developed step-validation test program for temperature and humidity. After a statistical evaluation of the sensor signal deviations relative to a calibrated reference sensor, the amount of still operational sensor elements was assessed. As a result, it was determined that sensor elements aged at high temperatures in a high-humidity atmosphere failed to a significantly greater extent owing to the damaging effect of water. This indicates that water significantly affected not only the solder joints of the sensor but also the sensor element itself under the investigated test conditions.

加速寿命试验（ALT）用于检测和了解失效机制，以及计算和评估电子元件（如传感器）在不同应用中受到各种影响因素的鲁棒性和由此产生的可靠性。基于用于润滑轨道部件状态监测的定制轴轴承湿度传感器（HSAB）系统成功的实验室和现场鲁棒性验证，设计了用于微机械湿度传感器的ALT方法，并给出了相应的结果。ALT旨在量化所选传感器在高于正常使用环境负载（温度和湿度）下的鲁棒性，重点是其传感器元件。因此，在恒定的高温结合低湿度和高湿度条件下执行alt，直到所有被测试的传感器元件失效。此后，使用各种方法对导致的失效进行了调查。将传感器元件的焊点失效确定为中心失效模式。根据所获得的传感器元件失效时间数据，拟合了一个双参数威布尔分布函数，与可比较的有关焊点失效的科学工作相一致。由于老化的传感器元件本身似乎没有受到执行的alt的明显影响甚至损坏，因此它们的现有功能后来得到了证明。为此，首先对它们进行重新排序，然后使用开发的温度和湿度步进验证测试程序进行测试。在对相对于校准参考传感器的传感器信号偏差进行统计评估后，评估了仍在运行的传感器元件的数量。结果表明，由于水的破坏作用，传感器元件在高温、高湿环境下老化失效的程度要大得多。这表明，在研究的测试条件下，水不仅显著影响传感器的焊点，而且显著影响传感器元件本身。

{"title":"Accelerated lifetime estimation and failure analysis of micromachined humidity sensors under high temperature and high humidity conditions","authors":"Krisztián Dubek , Christoph Schneidhofer , Nicole Dörr , Harald Rojacz , Bernhard Plank , Ulrich Schmid","doi":"10.1016/j.microrel.2025.115885","DOIUrl":"10.1016/j.microrel.2025.115885","url":null,"abstract":"<div><div>Accelerated Life Testing (ALT) is used to detect and understand failure mechanisms, as well as to calculate and evaluate the robustness and resulting reliability of electronic components such as sensors subjected to various influencing factors in different applications. Based on the successful lab and field robustness validation of the customized Humidity Sensor in Axle Bearings (HSAB) system utilized for the condition monitoring of lubricated rail components, an ALT methodology was designed for a micromachined humidity sensor, and respective results are presented. ALT was aimed at quantifying the robustness of the selected sensor under higher-than-normal use environmental loads (temperature and humidity), with a focus on its sensor element. Thus, ALTs under constant high temperatures combined with low- and high-humidity conditions were executed until all the tested sensor elements failed. Thereafter, the resulting failures were investigated using various methods. The solder joint failure of the sensor element was determined as a central failure mode. Based on the data obtained for the time to failure of the sensor elements, a two-parameter Weibull distribution function was fitted, in agreement with comparable scientific works on solder joint failures. As the aged sensor elements themselves did not seem to be significantly influenced or even damaged by the executed ALTs, their existing functionality was proven afterwards. For this purpose, they were first resoldered and then tested using a developed step-validation test program for temperature and humidity. After a statistical evaluation of the sensor signal deviations relative to a calibrated reference sensor, the amount of still operational sensor elements was assessed. As a result, it was determined that sensor elements aged at high temperatures in a high-humidity atmosphere failed to a significantly greater extent owing to the damaging effect of water. This indicates that water significantly affected not only the solder joints of the sensor but also the sensor element itself under the investigated test conditions.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"174 ","pages":"Article 115885"},"PeriodicalIF":1.9,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144771536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer 具有LPCVD-SiN钝化层的薄势垒AlGaN/GaN miss - hemt的温度依赖特性和机制

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-08-05 DOI: 10.1016/j.microrel.2025.115877

Simei Huang, Jiejie Zhu, Mengdi Li, Lingjie Qin, Huilin Li, Boxuan Gao, Qing Zhu, Xiaohua Ma

This paper investigates the temperature-dependent characteristics and degradation mechanisms of thin-barrier AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with low-pressure chemical vapor deposition SiN passivation layers on silicon substrate from 223 to 463 K. The channel current degradation in large gate-length devices is primarily attributed to mobility degradation. Through temperature-dependent field-effect mobility analysis, polar optical phonon scattering mechanism dominates at high temperatures, with an extracted optical phonon energy of 92.65 meV. Besides, the mechanisms of gate leakage current were studied. At temperatures above 373 K, slight increased gate leakage after pinch-off is dominated by two-dimensional variable range hopping, with the activation energy of 0.018 to 0.013 eV. While in the reverse bias region, trap-assisted tunneling (TAT) and Poole–Frenkel (PF) emission mechanism were found to dominate. The PF mechanism prevails above 403 K with a trap activation energy of 0.64 eV, while TAT dominates below 298 K showing the trap energy of 0.215 to 0.242 eV. In the medium forward bias region, defect-assisted tunneling (DAT) is the dominant mechanism. In the high forward bias region, TAT dominates with the trap energy ranging from 0.237 to 0.265 eV.

本文研究了在223 ~ 463 K的硅衬底上采用低压化学气相沉积SiN钝化层的薄势垒AlGaN/GaN金属-绝缘体-半导体高电子迁移率晶体管的温度依赖特性和降解机制。大栅极长度器件的通道电流退化主要是由于迁移率的退化。通过温度场效应迁移率分析，发现在高温下，极性光声子散射机制占主导地位，提取的光声子能量为92.65 meV。此外，还研究了栅漏电流的产生机理。在373 K以上的温度下，掐断后栅极漏电的轻微增加主要表现为二维变范围跳变，活化能为0.018 ~ 0.013 eV。而在反向偏置区，阱辅助隧穿（TAT）和Poole-Frenkel （PF）发射机制占主导地位。403 K以上以PF机制为主，捕获活化能为0.64 eV； 298 K以下以TAT机制为主，捕获活化能为0.215 ~ 0.242 eV。在中等正向偏置区域，缺陷辅助隧穿（DAT）是主要机制。在高正向偏置区，TAT占主导地位，捕获能量在0.237 ~ 0.265 eV之间。

{"title":"Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer","authors":"Simei Huang, Jiejie Zhu, Mengdi Li, Lingjie Qin, Huilin Li, Boxuan Gao, Qing Zhu, Xiaohua Ma","doi":"10.1016/j.microrel.2025.115877","DOIUrl":"10.1016/j.microrel.2025.115877","url":null,"abstract":"<div><div>This paper investigates the temperature-dependent characteristics and degradation mechanisms of thin-barrier AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with low-pressure chemical vapor deposition SiN passivation layers on silicon substrate from 223 to 463 K. The channel current degradation in large gate-length devices is primarily attributed to mobility degradation. Through temperature-dependent field-effect mobility analysis, polar optical phonon scattering mechanism dominates at high temperatures, with an extracted optical phonon energy of 92.65 meV. Besides, the mechanisms of gate leakage current were studied. At temperatures above 373 K, slight increased gate leakage after pinch-off is dominated by two-dimensional variable range hopping, with the activation energy of 0.018 to 0.013 eV. While in the reverse bias region, trap-assisted tunneling (TAT) and Poole–Frenkel (PF) emission mechanism were found to dominate. The PF mechanism prevails above 403 K with a trap activation energy of 0.64 eV, while TAT dominates below 298 K showing the trap energy of 0.215 to 0.242 eV. In the medium forward bias region, defect-assisted tunneling (DAT) is the dominant mechanism. In the high forward bias region, TAT dominates with the trap energy ranging from 0.237 to 0.265 eV.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"174 ","pages":"Article 115877"},"PeriodicalIF":1.9,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144771537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Ni, Co, and Mn for the recent advancements and progress of Sn-X (X= Bi, Ag, Zn & Cu) solder alloys: A review Ni, Co， Mn对Sn-X （X= Bi, Ag, Zn, Cu）钎料合金最新进展的影响

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-08-04 DOI: 10.1016/j.microrel.2025.115878

Ajeet Mishra, Anju Kaushal, Mukesh Raushan Kumar

Advancements in microelectronics and electronic assemblies have accelerated the need for advanced Pb-free solder materials designed to fulfill specific industry needs. The sectors such as electronics, avionics, marine, aerospace, and automotive industries seek solder alloys with enhanced mechanical integrity, thermal stability, and electrical reliability. The continuous emergence of Lead-free solders compositions focuses on optimizing their microstructure and performance characteristics to fulfill the stringent demands of modern applications. This review comprehensively examines the influence of nickel (Ni), cobalt (Co), and manganese (Mn) alloying in SnBi, SnAg, SnZn and SnCu solder systems focusing on their impacts on microstructural refinement, mechanical reinforcement, wettability enhancement, melting behavior, electrical and thermal conductivity, electromigration resistance and corrosion mitigation. The added Ni has been observed to refine intermetallic compound (IMC) structure and reduce excessive IMC growth thereby improving joint durability and creep resistance, also regulating surface morphology. The Co contributes to microstructural stability and thermal stability optimizing the mechanical robustness of solder joints. The Mn known for their oxidation resistance property improves corrosion resistance reduces interfacial voiding and refines IMC morphology. This review highlights the potential of Ni, Co, and Mn as key additive elements in Lead-free solder development. Their controlled addition can considerably strengthen the thermal, electrical and mechanical characteristics of solder systems, making them better suited for next-generation electronic and electrical applications.

微电子和电子组件的进步加速了对先进的无铅焊料材料的需求，这些材料旨在满足特定的工业需求。电子、航空电子、船舶、航空航天和汽车等行业都需要具有更高机械完整性、热稳定性和电气可靠性的焊料合金。无铅焊料组合物的不断涌现，重点是优化其微观结构和性能特征，以满足现代应用的严格要求。本文全面研究了镍（Ni）、钴（Co）和锰（Mn）合金在SnBi、SnAg、SnZn和SnCu焊料系统中的影响，重点研究了它们对微观组织细化、机械增强、润湿性增强、熔化行为、电导率和导热性、电迁移电阻和缓蚀性的影响。添加Ni可以细化金属间化合物（IMC）的结构，减少IMC的过度生长，从而提高接头的耐久性和抗蠕变能力，并调节表面形貌。Co有助于提高焊点的显微组织稳定性和热稳定性，优化焊点的机械坚固性。Mn以其抗氧化性能而闻名，提高了耐腐蚀性，减少了界面空隙，改善了IMC的形态。这篇综述强调了Ni， Co和Mn作为无铅焊料发展的关键添加剂元素的潜力。它们的可控添加可以大大增强焊料系统的热、电气和机械特性，使其更适合下一代电子和电气应用。

{"title":"Effect of Ni, Co, and Mn for the recent advancements and progress of Sn-X (X= Bi, Ag, Zn & Cu) solder alloys: A review","authors":"Ajeet Mishra, Anju Kaushal, Mukesh Raushan Kumar","doi":"10.1016/j.microrel.2025.115878","DOIUrl":"10.1016/j.microrel.2025.115878","url":null,"abstract":"<div><div>Advancements in microelectronics and electronic assemblies have accelerated the need for advanced Pb-free solder materials designed to fulfill specific industry needs. The sectors such as electronics, avionics, marine, aerospace, and automotive industries seek solder alloys with enhanced mechanical integrity, thermal stability, and electrical reliability. The continuous emergence of Lead-free solders compositions focuses on optimizing their microstructure and performance characteristics to fulfill the stringent demands of modern applications. This review comprehensively examines the influence of nickel (Ni), cobalt (Co), and manganese (Mn) alloying in Sn<img>Bi, Sn<img>Ag, Sn<img>Zn and Sn<img>Cu solder systems focusing on their impacts on microstructural refinement, mechanical reinforcement, wettability enhancement, melting behavior, electrical and thermal conductivity, electromigration resistance and corrosion mitigation. The added Ni has been observed to refine intermetallic compound (IMC) structure and reduce excessive IMC growth thereby improving joint durability and creep resistance, also regulating surface morphology. The Co contributes to microstructural stability and thermal stability optimizing the mechanical robustness of solder joints. The Mn known for their oxidation resistance property improves corrosion resistance reduces interfacial voiding and refines IMC morphology. This review highlights the potential of Ni, Co, and Mn as key additive elements in Lead-free solder development. Their controlled addition can considerably strengthen the thermal, electrical and mechanical characteristics of solder systems, making them better suited for next-generation electronic and electrical applications.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"174 ","pages":"Article 115878"},"PeriodicalIF":1.9,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144771538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fatigue lifetime prediction of power modules under power cycling using a volume-weighted averaging technique 功率循环下功率模块疲劳寿命的体积加权平均预测

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-07-31 DOI: 10.1016/j.microrel.2025.115866

Guoliao Sun , Wenhui Zhu , Liangcheng Wang , Hongwei Liu , Xianchi Wang

With the continuous increase in power density of electric vehicle (EV) power modules, double-sided cooling (DSC) technology has become a focal point of research. However, the commercialization of DSC power modules is significantly hindered by their complex manufacturing processes and high development costs. Traditional power cycling reliability assessment methods, which are costly and time-consuming, are not conducive to rapid technological iteration and advancement. This study proposes a lifetime prediction model based on volume-weighted average strain energy density, utilizing a global volume-weighted averaging technique rather than focusing on the maximum stress and strain locations at solder joints. Through least-squares curve fitting analysis, numerous volume-weighted average strain energy density simulation results were correlated with corresponding power cycling test results, allowing the determination of material-specific fatigue coefficients in the lifetime prediction model. The feasibility of the proposed model was validated using commercially available insulated-gate bipolar transistor (IGBT) power modules. Furthermore, the influence of different buffer materials on the lifetime of DSC IGBT power modules was thoroughly evaluated. This study provides valuable insights for accelerating the development of DSC power modules in the future.

随着电动汽车（EV）电源模块功率密度的不断提高，双面冷却（DSC）技术已成为研究热点。然而，DSC功率模块的商业化受到其复杂的制造工艺和高昂的开发成本的严重阻碍。传统的电力循环可靠性评估方法成本高、耗时长，不利于技术的快速迭代和进步。本研究提出了一种基于体积加权平均应变能密度的寿命预测模型，利用全局体积加权平均技术，而不是专注于焊点的最大应力和应变位置。通过最小二乘曲线拟合分析，将大量体积加权平均应变能密度模拟结果与相应的功率循环试验结果进行关联，从而确定寿命预测模型中的材料特异性疲劳系数。利用市售的绝缘栅双极晶体管（IGBT）功率模块验证了该模型的可行性。此外，还全面评估了不同缓冲材料对DSC IGBT功率模块寿命的影响。本研究为加速DSC电源模块的未来发展提供了有价值的见解。

{"title":"Fatigue lifetime prediction of power modules under power cycling using a volume-weighted averaging technique","authors":"Guoliao Sun , Wenhui Zhu , Liangcheng Wang , Hongwei Liu , Xianchi Wang","doi":"10.1016/j.microrel.2025.115866","DOIUrl":"10.1016/j.microrel.2025.115866","url":null,"abstract":"<div><div>With the continuous increase in power density of electric vehicle (EV) power modules, double-sided cooling (DSC) technology has become a focal point of research. However, the commercialization of DSC power modules is significantly hindered by their complex manufacturing processes and high development costs. Traditional power cycling reliability assessment methods, which are costly and time-consuming, are not conducive to rapid technological iteration and advancement. This study proposes a lifetime prediction model based on volume-weighted average strain energy density, utilizing a global volume-weighted averaging technique rather than focusing on the maximum stress and strain locations at solder joints. Through least-squares curve fitting analysis, numerous volume-weighted average strain energy density simulation results were correlated with corresponding power cycling test results, allowing the determination of material-specific fatigue coefficients in the lifetime prediction model. The feasibility of the proposed model was validated using commercially available insulated-gate bipolar transistor (IGBT) power modules. Furthermore, the influence of different buffer materials on the lifetime of DSC IGBT power modules was thoroughly evaluated. This study provides valuable insights for accelerating the development of DSC power modules in the future.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"174 ","pages":"Article 115866"},"PeriodicalIF":1.9,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modified TCAD simulation approach for 4H-SiC JBS diode to investigate electron trapping effects 改进的4H-SiC JBS二极管TCAD仿真方法研究电子俘获效应

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-07-29 DOI: 10.1016/j.microrel.2025.115876

Shikha Kumari , Pierre Brosselard , Dominique Planson , P. Vigneshwara Raja

A modified TCAD approach is developed for 4H-SiC junction barrier Schottky (JBS) diode by placing distinct contacts to the Schottky barrier diode (SBD) and PN junction regions. Like reality, if a common metal contact with work function is specified for top electrode, TCAD model simulates back-to-back serially connected metal/p⁺-type Schottky and PN junction characteristics at the PN regions. Hence, the conventional contact definition simulates only the SBD characteristics with the reduced active area, while PN junctions remain inactive. Using modified contact strategy, the simulated forward I-V is matched with the measurements, and the SBD and PN diode current components are disassociated. The peak electric field occurs at the PN junction during reverse bias; however, reverse current is entirely caused by SBD tunneling current, thereby realizing the typical JBS diode operation. Trap-assisted tunneling (TAT) current induced by omnipresent electron traps (E_C – 0.19 eV, E_C – 0.65 eV, and E_C – 1.65 eV) in 4H-SiC is explored for JBS diodes. The reverse I-V is eventually validated using non-local tunneling model. The TCAD simulations are extended to investigate the electron trapping effects on the I-V properties with increasing trap concentrations. Consequently, the trapping-induced changes in the internal device parameters are probed to correlate with the macroscopic variation in the diode characteristics.

通过在肖特基势垒二极管（SBD）和PN结区域放置不同的触点，开发了一种改进的4H-SiC势垒肖特基（JBS）二极管的TCAD方法。与实际情况类似，如果顶部电极指定一个具有功函数的公共金属触点，TCAD模型在PN区域模拟背靠背串行连接的金属/p+型肖特基和PN结特性。因此，传统的接触定义只模拟了活性面积减少的SBD特性，而PN结保持非活性。采用改进的接触策略，模拟的正向I-V与测量值相匹配，SBD和PN二极管电流分量分离。反向偏压时，峰值电场出现在PN结处；而反向电流完全由SBD隧穿电流引起，从而实现了典型的JBS二极管工作。研究了JBS二极管在4H-SiC中普遍存在的电子阱（EC - 0.19 eV, EC - 0.65 eV和EC - 1.65 eV）诱导的阱辅助隧穿（TAT）电流。最后利用非局部隧道模型验证了反向I-V。扩展了TCAD模拟，以研究随着陷阱浓度的增加，电子捕获对I-V性能的影响。因此，研究了捕获引起的器件内部参数变化与二极管特性的宏观变化之间的关系。

{"title":"Modified TCAD simulation approach for 4H-SiC JBS diode to investigate electron trapping effects","authors":"Shikha Kumari , Pierre Brosselard , Dominique Planson , P. Vigneshwara Raja","doi":"10.1016/j.microrel.2025.115876","DOIUrl":"10.1016/j.microrel.2025.115876","url":null,"abstract":"<div><div>A modified TCAD approach is developed for 4H-SiC junction barrier Schottky (JBS) diode by placing distinct contacts to the Schottky barrier diode (SBD) and PN junction regions. Like reality, if a common metal contact with work function is specified for top electrode, TCAD model simulates back-to-back serially connected metal/p<sup>+</sup>-type Schottky and PN junction characteristics at the PN regions. Hence, the conventional contact definition simulates only the SBD characteristics with the reduced active area, while PN junctions remain inactive. Using modified contact strategy, the simulated forward I-V is matched with the measurements, and the SBD and PN diode current components are disassociated. The peak electric field occurs at the PN junction during reverse bias; however, reverse current is entirely caused by SBD tunneling current, thereby realizing the typical JBS diode operation. Trap-assisted tunneling (TAT) current induced by omnipresent electron traps (E<sub>C</sub> – 0.19 eV, E<sub>C</sub> – 0.65 eV, and E<sub>C</sub> – 1.65 eV) in 4H-SiC is explored for JBS diodes. The reverse I-V is eventually validated using non-local tunneling model. The TCAD simulations are extended to investigate the electron trapping effects on the I-V properties with increasing trap concentrations. Consequently, the trapping-induced changes in the internal device parameters are probed to correlate with the macroscopic variation in the diode characteristics.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"173 ","pages":"Article 115876"},"PeriodicalIF":1.9,"publicationDate":"2025-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144723284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Condition monitoring of a DC-link capacitor in an inverter with a front-end diode rectifier under imbalanced three-phase supply voltage 三相电源电压不平衡情况下前置二极管整流器逆变器直流电容状态监测

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-07-28 DOI: 10.1016/j.microrel.2025.115873

Takuma Yamasoto , Kazunori Hasegawa

DC-link capacitors in inverters have a shorter lifetime than the other devices, and thus degrade reliability of the inverters. The inverters are usually fed by three-phase supply voltages; however, the three-phase voltages are frequently imbalanced due to the connection of single-phase power sources and loads, such as renewable energy, which places additional stress on the DC-link capacitors. This paper proposes a condition monitoring method of a DC-link capacitor without an additional current sensor in an inverter system under the imbalanced three-phase supply voltage. This inverter system employs a front-end six-pulse diode rectifier with a DC reactor. The method is based on an analysis of the rectifier output ripple voltage including the uncharacteristic harmonics that result from imbalanced supply voltage, which is valid in a practical imbalance ratio around 5%. Experimental results obtained from a 200-V 1.5-kW laboratory system confirmed that both the capacitance and ESR were monitored even though the supply voltage was imbalanced.

逆变器中的直流电容寿命比其他器件短，从而降低了逆变器的可靠性。逆变器通常由三相电源电压供电；然而，由于单相电源和负载（如可再生能源）的连接，三相电压经常不平衡，这给直流链路电容器带来了额外的压力。本文提出了一种在三相电源电压不平衡情况下，不加电流传感器的直流电容状态监测方法。该逆变系统采用前端六脉冲二极管整流器和直流电抗器。该方法基于对整流器输出纹波电压的分析，包括电源电压不平衡引起的非特征谐波，该方法在实际不平衡率约为5%时有效。在一个200v 1.5 kw的实验系统中得到的实验结果证实，即使电源电压不平衡，电容和ESR也能被监测到。

引用次数: 0

Toward robust structure function-based thermal analysis: Quantitative metrics for semiconductor packaging evaluation 迈向基于稳健结构功能的热分析：半导体封装评估的定量指标

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-07-28 DOI: 10.1016/j.microrel.2025.115867

Wonbin Song , Guesuk Lee , Byeng D. Youn

Thermal management remains a critical challenge in modern semiconductor packaging, where escalating power densities and advanced 2.5D/3D integrated architectures drive the need for accurate and reliable thermal analysis. Structure function (SF)-based thermal analysis provides valuable insights into internal heat transport mechanisms through transient temperature responses. However, its broader adoption is hindered by limitations in data quality, comparison methodologies, and the interpretability of multilayered structures. This study established a robust framework to improve the precision and utility of SF analysis in semiconductor applications. Optimal transient measurement conditions, such as initial time windows (10⁻⁶–10⁻⁵ s) and sampling density (≥10 points/decade), were identified to enhance the SF accuracy without excessive computational cost. The influence of the thermal and geometric properties was systematically evaluated, highlighting how the layer contrasts and structural voids impact the SF resolution. To overcome the limitations of existing comparison metrics, two new quantitative approaches— the Area Metric and Dynamic Time Warping Metric—are proposed, demonstrating superior sensitivity to both global and localized thermal structure changes. These findings offer practical guidance for thermal design optimization, enable defect detection, and support the development of standardized, simulation-driven SF methodologies.

热管理仍然是现代半导体封装的一个关键挑战，不断升级的功率密度和先进的2.5D/3D集成架构推动了对准确可靠的热分析的需求。基于结构函数（SF）的热分析通过瞬态温度响应为内部热传递机制提供了有价值的见解。然而，由于数据质量、比较方法和多层结构的可解释性方面的限制，它的广泛采用受到阻碍。本研究建立了一个强大的框架，以提高半导体应用中SF分析的精度和实用性。确定了最佳的瞬态测量条件，如初始时间窗（10−6-10−5 s）和采样密度（≥10个点/ 10年），以提高SF精度，而不需要过多的计算成本。系统地评估了热性质和几何性质的影响，强调了层对比和结构空隙对SF分辨率的影响。为了克服现有比较指标的局限性，提出了两种新的定量方法-面积度量和动态时间翘曲度量，对全局和局部热结构变化都表现出优越的灵敏度。这些发现为热设计优化提供了实用的指导，使缺陷检测成为可能，并支持标准化、仿真驱动的SF方法的发展。

{"title":"Toward robust structure function-based thermal analysis: Quantitative metrics for semiconductor packaging evaluation","authors":"Wonbin Song , Guesuk Lee , Byeng D. Youn","doi":"10.1016/j.microrel.2025.115867","DOIUrl":"10.1016/j.microrel.2025.115867","url":null,"abstract":"<div><div>Thermal management remains a critical challenge in modern semiconductor packaging, where escalating power densities and advanced 2.5D/3D integrated architectures drive the need for accurate and reliable thermal analysis. Structure function (SF)-based thermal analysis provides valuable insights into internal heat transport mechanisms through transient temperature responses. However, its broader adoption is hindered by limitations in data quality, comparison methodologies, and the interpretability of multilayered structures. This study established a robust framework to improve the precision and utility of SF analysis in semiconductor applications. Optimal transient measurement conditions, such as initial time windows (10<sup>−6</sup>–10<sup>−5</sup> s) and sampling density (≥10 points/decade), were identified to enhance the SF accuracy without excessive computational cost. The influence of the thermal and geometric properties was systematically evaluated, highlighting how the layer contrasts and structural voids impact the SF resolution. To overcome the limitations of existing comparison metrics, two new quantitative approaches— the Area Metric and Dynamic Time Warping Metric—are proposed, demonstrating superior sensitivity to both global and localized thermal structure changes. These findings offer practical guidance for thermal design optimization, enable defect detection, and support the development of standardized, simulation-driven SF methodologies.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"173 ","pages":"Article 115867"},"PeriodicalIF":1.9,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144723285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Al content on microstructure and solder joint reliability of SAC305-2.0Sb-3.0Bi-0.1Ni solder alloys Al含量对SAC305-2.0Sb-3.0Bi-0.1Ni钎料合金组织及焊点可靠性的影响

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-07-26 DOI: 10.1016/j.microrel.2025.115874

Yipeng Xiang , Jiayi Xu , Biao Wang , Jianhua Zhao , Jikang Yan

Currently, most studies on solder alloy reliability focus on six-element systems, while research on seven-element solder alloy alloys, particularly concerning the influence of Al is limited. To address this gap, this study investigates the effect of Al microalloying on the mechanical and interfacial properties of a newly developed seven-element solder alloy. SAC305-2.0Sb-3.0Bi-0.1Ni was used as the base composition, and varying amounts of Al were added to form the SACSBN-xAl alloy system. Microstructural analysis and mechanical testing were conducted, including X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-temperature aging, to evaluate hardness, tensile strength, and intermetallic compound (IMC) growth behavior. The results show that the addition of Al significantly refines the microstructure and promotes a more uniform phase distribution. Notably, at 0.2 wt% Al addition, the solder exhibited the highest hardness (22.133 HV) and tensile strength (67.575 MPa), indicating substantial performance enhancement. Furthermore, high-temperature aging tests revealed that the IMC growth coefficient at the solder/substrate interface reached a minimum of 0.0128, suggesting improved interfacial stability. These findings demonstrate that Al microalloying, particularly at 0.2 wt%, effectively enhances the reliability and mechanical performance of the solder joint.

目前，对钎料合金可靠性的研究大多集中在六元体系上，而对七元钎料合金的研究，特别是对Al影响的研究较少。为了解决这一空白，本研究研究了Al微合金化对新开发的七元素焊料合金的力学和界面性能的影响。以SAC305-2.0Sb-3.0Bi-0.1Ni为基体，加入不同量的Al，形成SACSBN-xAl合金体系。采用x射线衍射（XRD）、扫描电镜（SEM）、高温时效等方法对材料进行显微组织分析和力学性能测试，评价材料的硬度、抗拉强度和金属间化合物（IMC）生长行为。结果表明，Al的加入显著细化了组织，使相分布更加均匀。值得注意的是，当Al添加量为0.2 wt%时，钎料的硬度最高（22.133 HV），抗拉强度最高（67.575 MPa），性能得到了显著提高。此外，高温时效试验表明，钎料/衬底界面处的IMC生长系数最小达到0.0128，表明界面稳定性得到改善。这些结果表明，Al微合金化，特别是在0.2 wt%时，有效地提高了焊点的可靠性和机械性能。

{"title":"Effect of Al content on microstructure and solder joint reliability of SAC305-2.0Sb-3.0Bi-0.1Ni solder alloys","authors":"Yipeng Xiang , Jiayi Xu , Biao Wang , Jianhua Zhao , Jikang Yan","doi":"10.1016/j.microrel.2025.115874","DOIUrl":"10.1016/j.microrel.2025.115874","url":null,"abstract":"<div><div>Currently, most studies on solder alloy reliability focus on six-element systems, while research on seven-element solder alloy alloys, particularly concerning the influence of Al is limited. To address this gap, this study investigates the effect of Al microalloying on the mechanical and interfacial properties of a newly developed seven-element solder alloy. SAC305-2.0Sb-3.0Bi-0.1Ni was used as the base composition, and varying amounts of Al were added to form the SACSBN-<em>x</em>Al alloy system. Microstructural analysis and mechanical testing were conducted, including X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-temperature aging, to evaluate hardness, tensile strength, and intermetallic compound (IMC) growth behavior. The results show that the addition of Al significantly refines the microstructure and promotes a more uniform phase distribution. Notably, at 0.2 wt% Al addition, the solder exhibited the highest hardness (22.133 HV) and tensile strength (67.575 MPa), indicating substantial performance enhancement. Furthermore, high-temperature aging tests revealed that the IMC growth coefficient at the solder/substrate interface reached a minimum of 0.0128, suggesting improved interfacial stability. These findings demonstrate that Al microalloying, particularly at 0.2 wt%, effectively enhances the reliability and mechanical performance of the solder joint.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"173 ","pages":"Article 115874"},"PeriodicalIF":1.6,"publicationDate":"2025-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144711935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physics-informed deep learning approach for nanoindentation-based thin film analysis 基于纳米压痕的薄膜分析的物理信息深度学习方法

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-07-25 DOI: 10.1016/j.microrel.2025.115875

Yusuf Burak Ozdemir , Oguzhan Orkut Okudur , Mario Gonzalez , Clement Merckling

This study presents an application of a physics-informed deep learning framework to improve and accelerate the yield stress characterization of thin films used in microelectronics to ensure long-term mechanical reliability via nanoindentation measurements. By combining finite element modeling (FEM) with neural networks, an accurate model for thin film yield stress has been demonstrated. This model offers comprehensive insights into the mechanical properties and plasticity of thin films under various loading conditions. The decision-making process of the model is investigated using explainable AI visualization techniques, enhancing the model's transparency and interpretability. Nanoindentation experiments on metal and dielectric thin films validate the high accuracy of the proposed deep learning models. This approach allows for the rapid analysis of load-displacement curves in milliseconds while providing high accuracy in yield stress estimations. Consequently, the proposed methodology significantly accelerates the characterization process and provides accurate yield stress estimations for thin film nanoindentation measurements, which is crucial for applications in microelectronics and the reliability of semiconductor devices.

本研究提出了一个物理信息深度学习框架的应用，以改进和加速微电子用薄膜的屈服应力表征，通过纳米压痕测量确保长期的机械可靠性。将有限元模型与神经网络相结合，建立了薄膜屈服应力的精确模型。该模型提供了对薄膜在各种载荷条件下的力学性能和塑性的全面见解。利用可解释的人工智能可视化技术研究了模型的决策过程，提高了模型的透明度和可解释性。金属和介电薄膜上的纳米压痕实验验证了所提出的深度学习模型的高精度。这种方法可以在毫秒内快速分析载荷-位移曲线，同时提供高精度的屈服应力估计。因此，所提出的方法显著加快了表征过程，并为薄膜纳米压痕测量提供了准确的屈服应力估计，这对于微电子应用和半导体器件的可靠性至关重要。

{"title":"Physics-informed deep learning approach for nanoindentation-based thin film analysis","authors":"Yusuf Burak Ozdemir , Oguzhan Orkut Okudur , Mario Gonzalez , Clement Merckling","doi":"10.1016/j.microrel.2025.115875","DOIUrl":"10.1016/j.microrel.2025.115875","url":null,"abstract":"<div><div>This study presents an application of a physics-informed deep learning framework to improve and accelerate the yield stress characterization of thin films used in microelectronics to ensure long-term mechanical reliability via nanoindentation measurements. By combining finite element modeling (FEM) with neural networks, an accurate model for thin film yield stress has been demonstrated. This model offers comprehensive insights into the mechanical properties and plasticity of thin films under various loading conditions. The decision-making process of the model is investigated using explainable AI visualization techniques, enhancing the model's transparency and interpretability. Nanoindentation experiments on metal and dielectric thin films validate the high accuracy of the proposed deep learning models. This approach allows for the rapid analysis of load-displacement curves in milliseconds while providing high accuracy in yield stress estimations. Consequently, the proposed methodology significantly accelerates the characterization process and provides accurate yield stress estimations for thin film nanoindentation measurements, which is crucial for applications in microelectronics and the reliability of semiconductor devices.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"173 ","pages":"Article 115875"},"PeriodicalIF":1.6,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144702883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Accelerated flowers of sulfur test method for power semiconductor modules 功率半导体模块加速硫花试验方法

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-07-24 DOI: 10.1016/j.microrel.2025.115870

Daniel T. Kaminski , Christopher Genthe , Benjamin C. Church

In humid sulfur-bearing gas application environments, power semiconductor modules can be susceptible to a corrosion failure mechanism consisting of electrically conductive copper sulfide dendrite filaments formed within insulation trenches leading to electrical shorting. A simple, safe, and low-cost corrosion test method is presented here for reliability testing for this type of failure mechanism. The test method is based on a modified version of ASTM B809–95 that was first reported for use on sulfur resistant thick film chip resistors. Here, the test was further modified to include DC voltage for accelerated reliability testing of commercially available power semiconductor modules. It is shown that the field corrosion failure mechanism can be replicated by this accelerated test within as little as 120 h in fully populated commercial modules and can discern comparative susceptibility of packaging between manufacturers. This test method adds to the collection of accelerated corrosion tests previously reported for investigation of the dendritic filament corrosion failure mechanism and stands as an option that is less complex and less toxic. A three-stage hypothesis for the corrosion dendritic failure mechanism is also presented.

在潮湿的含硫气体应用环境中，功率半导体模块可能容易受到腐蚀失效机制的影响，该机制由绝缘沟槽内形成的导电硫化铜枝晶细丝组成，导致电短路。本文提出了一种简单、安全、低成本的腐蚀试验方法，用于此类失效机理的可靠性试验。该测试方法基于ASTM B809-95的修改版本，该版本首次报道用于耐硫厚膜片式电阻器。在这里，测试被进一步修改为包括直流电压，以加速商用功率半导体模块的可靠性测试。结果表明，现场腐蚀失效机制可以通过这种加速试验在短短120小时内在完全填充的商业模块中复制，并且可以辨别制造商之间包装的相对敏感性。该试验方法增加了先前报道的用于研究枝晶细丝腐蚀失效机制的加速腐蚀试验集合，并作为一种不太复杂和毒性较小的选择。提出了腐蚀枝晶破坏机制的三阶段假设。

{"title":"Accelerated flowers of sulfur test method for power semiconductor modules","authors":"Daniel T. Kaminski , Christopher Genthe , Benjamin C. Church","doi":"10.1016/j.microrel.2025.115870","DOIUrl":"10.1016/j.microrel.2025.115870","url":null,"abstract":"<div><div>In humid sulfur-bearing gas application environments, power semiconductor modules can be susceptible to a corrosion failure mechanism consisting of electrically conductive copper sulfide dendrite filaments formed within insulation trenches leading to electrical shorting. A simple, safe, and low-cost corrosion test method is presented here for reliability testing for this type of failure mechanism. The test method is based on a modified version of ASTM B809–95 that was first reported for use on sulfur resistant thick film chip resistors. Here, the test was further modified to include DC voltage for accelerated reliability testing of commercially available power semiconductor modules. It is shown that the field corrosion failure mechanism can be replicated by this accelerated test within as little as 120 h in fully populated commercial modules and can discern comparative susceptibility of packaging between manufacturers. This test method adds to the collection of accelerated corrosion tests previously reported for investigation of the dendritic filament corrosion failure mechanism and stands as an option that is less complex and less toxic. A three-stage hypothesis for the corrosion dendritic failure mechanism is also presented.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"173 ","pages":"Article 115870"},"PeriodicalIF":1.6,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144694363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0