Microelectronics Reliability最新文献

英文中文

Optimization and reliability of ultrasonic wedge bonding performance of copper wires on gold pads for MEMS devices MEMS器件金衬垫上铜线超声楔接性能优化及可靠性研究

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-12-01 DOI: 10.1016/j.microrel.2025.115971

Zikang Luo , Xiuqi Wang , Yifan Li , Pengjie Zhou , Liang Chen , Chengdong Bai , Mingyu Li , Hongjun Ji

This work focuses on optimizing the bonding performance and enhancing the reliability of copper (Cu) wires on gold (Au) pads for MEMS devices, aiming to address the critical role of bonding wire reliability in ensuring overall device performance. Through orthogonal experiments combined with response surface regression analysis, the effects of four key process parameters (bonding force, ultrasonic power, ultrasonic time, and bonding temperature) on bonding quality were systematically investigated, with a specific focus on their coupling mechanisms. The results revealed that bonding force and ultrasonic power are the dominant factors determining the bonding pull force. A medium parameter combination (bonding force of 25 gf, ultrasonic power of 0.85 W, ultrasonic time of 180 ms, and bonding temperature of 50 °C) achieved the optimal bonding quality. This superiority arises from the balanced interplay between ultrasonic softening and grain refinement during bonding. Moderate plastic deformation of the Cu wire promotes uniform dislocation activation and annihilation at grain boundaries, avoids excessive stress concentration or material damage, and facilitates the formation of uniform (111) and (001) textures at the interface. Notably, CuAu intermetallic compounds (IMCs) were scarcely observed, eliminating the risk of brittleness caused by abnormal IMCs growth. Reliability tests, including high-temperature aging and thermal cycling, demonstrated that long-term thermal stress leads to performance degradation of bonding joints, primarily driven by interface cracks. After 25 days of aging at 150 °C, the bond pull force dropped below 6 gf. After 800 cycles, the pull force decreased to approximately 7.5 gf. This work clarifies the parameter coupling mechanisms and reliability rules of ultrasonic wire bonding of Cu wires on Au pads, practical theoretical and experimental support for improving the bonding reliability of MEMS devices.

本研究的重点是优化MEMS器件中铜（Cu）线在金（Au）焊盘上的键合性能并提高其可靠性，旨在解决键合线可靠性在确保器件整体性能中的关键作用。通过正交试验结合响应面回归分析，系统考察了4个关键工艺参数（结合力、超声功率、超声时间、键合温度）对键合质量的影响，重点探讨了它们的耦合机理。结果表明，结合力和超声功率是决定结合拉力的主要因素。采用中等参数组合（结合力为25 gf，超声功率为0.85 W，超声时间为180 ms，键合温度为50℃）可获得最佳的键合质量。这种优势来自于超声软化和晶粒细化之间的平衡相互作用。适度的塑性变形促进了晶界处均匀的位错激活和湮灭，避免了过度的应力集中或材料损伤，有利于在界面处形成均匀的（111）和（001）织构。值得注意的是，几乎没有观察到CuAu金属间化合物（IMCs），消除了IMCs异常生长引起的脆性风险。包括高温老化和热循环在内的可靠性测试表明，长期的热应力导致连接接头的性能下降，主要是由界面裂纹驱动的。在150℃老化25天后，粘结拉力降至6gf以下。经过800次循环后，拉力下降到大约7.5 gf。阐明了铜线超声焊盘键合的参数耦合机理和可靠性规律，为提高MEMS器件的键合可靠性提供了理论和实验支持。

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引用次数: 0

Editorial on the Special Issue related to the ESREF 2024 conference ESREF 2024会议特刊社论

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-12-01 DOI: 10.1016/j.microrel.2025.115927

Francesco Iannuzzo, Matteo Meneghini, Giovanna Mura, Paolo Cova, Nicola Delmonte

引用次数: 0

Corrigendum to “comparative analysis of mechanical and thermal stresses in ITO and AZO thin films on flexible PET substrates for flexible electronic applications” [microelectronics reliability volume 175, December 2025, 115921] “用于柔性电子应用的柔性PET衬底上ITO和AZO薄膜的机械和热应力的比较分析”的更正[微电子可靠性卷175，December 2025, 115921]

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-12-01 DOI: 10.1016/j.microrel.2025.115926

Mohammad M. Hamasha , Sa'd Hamasha , Khalid Alzoubi , Raghad Massadeh , Khozima Hamasha

引用次数: 0

Bonding wire aging monitoring method for IGBT and FWD based on dual-parameter decoupling 基于双参数解耦的IGBT和FWD焊线老化监测方法

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-11-30 DOI: 10.1016/j.microrel.2025.115970

Mingxing Du, Guosheng Hong, Jianxiong Yang

This paper proposes a dual-parameter decoupling-based method for precise monitoring of bonding wire lift-off in both the IGBT and freewheeling diode (FWD) of half-bridge modules. Through analysis of the controlled IGBT turn-off transient, it is found that the complementary IGBT collector-emitter voltage undershoot V_CE2(np) contains aging information from both IGBT and FWD bonding wires, while the Kelvin emitter voltage undershoot V_eE2(np) primarily reflects IGBT bonding wire aging. The decoupling algorithm first utilizes V_eE2(np) to isolate the IGBT aging component and then extracts the standalone FWD aging signature from V_CE2(np). Experimental results confirm the method's robustness under varying load current and junction temperature, with interference compensated by a linear calibration model. The approach is particularly advantageous in systems with stable bus voltage, where this major interference is inherently minimized. Since the method leverages inherent electrical characteristics, it provides a practical solution for preventive maintenance in power electronic systems.

本文提出了一种基于双参数解耦的方法，用于精确监测半桥模块中IGBT和自由旋转二极管（FWD）的键合线上升。通过对可控IGBT关断瞬态的分析，发现IGBT集电极-发射极互补电压下突VCE2（np）同时包含IGBT和FWD键合线的老化信息，而开尔文发射极下突VeE2（np）主要反映IGBT键合线的老化信息。解耦算法首先利用VeE2（np）分离IGBT老化分量，然后从VCE2（np）中提取独立的FWD老化特征。实验结果证实了该方法在不同负载电流和结温下的鲁棒性，并通过线性校准模型补偿了干扰。该方法在具有稳定母线电压的系统中特别有利，其中这种主要干扰本质上是最小的。由于该方法利用了固有的电气特性，因此为电力电子系统的预防性维护提供了一种实用的解决方案。

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引用次数: 0

AI surrogate modeling for PBGA solder joint fatigue risk assessment 基于AI的PBGA焊点疲劳风险评估模型

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-11-29 DOI: 10.1016/j.microrel.2025.115956

Cadmus Yuan, Jian-Cheng Hong, Pin-Sian Li

Solder joint reliability is a critical concern in advanced electronic packaging, especially as heterogeneous integration and chiplet-based architectures increase interconnect density and stricter reliability demands. This study introduces an artificial intelligence (AI)–finite element modeling (FEM) co-design framework for assessing solder fatigue failures, utilizing AI surrogate models for quick conceptual design exploration while preserving the accuracy of FEM validation. The research emphasizes developing training strategies that create AI surrogate models with strong generalization capabilities and investigates their use in conceptual design optimization using a database generated from an experimentally validated FEM.

To achieve robust model performance, the methodology integrates genetic algorithms for diverse weight initialization, kernel principal component analysis (K-PCA) for dimensionality reduction, and ensemble learning to balance computational efficiency and predictive robustness. Beyond conventional metrics, cosine similarity analysis and weight frequency decomposition are introduced as diagnostic tools for overparameterized deep neural networks (DNNs). Comparative analyses of adaptive moment estimation (ADAM) and stochastic gradient descent (SGD) show that both optimizers can achieve low validation errors, with SGD tending to yield smoother gradients and ADAM converging more rapidly. Experimental results indicate that well-constructed ensembles achieve validation errors below 1 % while maintaining consistent gradient-based optimization outcomes across different weight initializations. Monte Carlo simulations further confirm the greater robustness of SGD-trained models under parameter uncertainty, attributed to their preference for low-frequency, smooth solutions. The proposed framework ensures that AI surrogate models are both predictive and optimization-consistent, effectively bridging early-stage design exploration with high-fidelity reliability assessment in electronic packaging applications.

焊点可靠性是先进电子封装的一个关键问题，特别是在异构集成和基于芯片的架构增加互连密度和更严格的可靠性要求的情况下。本研究引入了人工智能(AI) -有限元建模（FEM）协同设计框架，用于评估焊料疲劳失效，利用AI替代模型进行快速概念设计探索，同时保持FEM验证的准确性。该研究强调开发训练策略，以创建具有强大泛化能力的人工智能代理模型，并使用由实验验证的FEM生成的数据库研究其在概念设计优化中的应用。为了实现稳健的模型性能，该方法集成了用于不同权重初始化的遗传算法、用于降维的核主成分分析（K-PCA）和用于平衡计算效率和预测鲁棒性的集成学习。除了传统的度量，余弦相似度分析和权重频率分解被引入作为过度参数化深度神经网络（dnn）的诊断工具。对自适应矩估计（ADAM）和随机梯度下降（SGD）的比较分析表明，这两种优化方法都可以实现较低的验证误差，SGD倾向于产生更平滑的梯度，ADAM更快收敛。实验结果表明，在不同权重初始化的情况下，构造良好的集成在保持一致的基于梯度的优化结果的同时，验证误差低于1%。蒙特卡罗模拟进一步证实了sgd训练的模型在参数不确定性下具有更强的鲁棒性，这归因于它们对低频光滑解的偏好。提出的框架确保人工智能代理模型既具有预测性又具有优化一致性，有效地将电子封装应用中的早期设计探索与高保真可靠性评估联系起来。

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引用次数: 0

Effect of Ag addition on the microstructure and distribution of second-phase particles in tin-based solder alloys 添加Ag对锡基钎料合金中第二相颗粒组织和分布的影响

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-11-29 DOI: 10.1016/j.microrel.2025.115969

Wei Zhang , Xiangxi Zhao , Jiayun Feng , Wei Liu , Ruyu Tian , Yanhong Tian

In this study, the effect of Ag content (x = 0, 1, 2, 3 wt%) on the microstructural evolution and the distribution of second phase particles in Sn-0.7Cu-xAg were analyzed utilizing scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Morphology of second-phase particles in low-temperature fracture surfaces of Sn-3.5Ag and Sn-0.7Cu solder alloys was characterized using TEM and focused ion beam (FIB) techniques. The results demonstrated that Ag within the solder matrix significantly inhibited the formation of Cu₆Sn₅ intermetallic compounds (IMCs). With increasing Ag content, Cu₆Sn₅ particles evolved from extensive, strip-like structures to a finer, more uniform distribution. Ag₃Sn particles predominantly accumulated at grain boundaries, with minimal Ag detected within the solder matrix. In contrast, Cu₆Sn₅ particles, along with a significant dispersion of copper (Cu) throughout the matrix, were also observed at grain boundaries. Quantitative analysis demonstrated that the suppression of Cu₆Sn₅ formation (assessed via Gibbs free energy calculations) reached its maximum efficacy at a critical Ag concentration of 0.17 at.%, with diminishing effects observed when Ag content exceeded 0.35 at. %.

利用扫描电镜（SEM）和透射电镜（TEM）分析了Ag含量（x = 0、1、2、3 wt%）对Sn-0.7Cu-xAg合金微观组织演变和第二相颗粒分布的影响。采用TEM和聚焦离子束（FIB）技术对Sn-3.5Ag和Sn-0.7Cu钎料合金低温断口第二相颗粒形貌进行了表征。结果表明，钎料基体内的Ag显著抑制了Cu6Sn5金属间化合物（IMCs）的形成。随着Ag含量的增加，Cu6Sn5颗粒由广泛的条形结构演变为更细、更均匀的分布。Ag3Sn颗粒主要积聚在晶界处，在钎料基体内检测到最小的Ag。相反，在晶界处也观察到Cu6Sn5颗粒，以及铜（Cu）在整个基体中的明显弥散。定量分析表明，抑制Cu6Sn5的形成（通过吉布斯自由能计算评估）在临界银浓度为0.17 at时达到最大效果。%，当Ag含量超过0.35 at时，效果逐渐减弱。%。

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引用次数: 0

Improved thermoreflectance imaging of trench IGBT via focus and illumination optimized reconstruction 通过聚焦和光照优化重建改进了堑壕IGBT的热反射成像

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-11-25 DOI: 10.1016/j.microrel.2025.115952

M. Sanogo , T. Kociniewski , Z. Khatir

In this paper, we improved the signal-to-noise ratio (S/N) of thermoreflectance images of trench Insulated Gate Bipolar Transistors (IGBT) particularly in low-intensity areas caused by insufficient illumination or defocusing due to topography and depth variations within these components. To enhance and homogenize signal intensity across the entire surface, we accurately determined the focal planes and optimal lighting conditions for each region. Then, before performing reflectivity calculations, we reconstructed a single high intensity optical image by selecting pixels based on their local focus values. This optical image reconstruction ensures a uniform distribution of maximum intensity across the image and significantly improvises the S/N ratio minimizing artifacts in the final reflectivity map.

在本文中，我们提高了沟槽绝缘栅双极晶体管（IGBT）的热反射图像的信噪比（S/N），特别是在低强度区域，由于这些组件内部的地形和深度变化导致光照不足或散焦。为了增强和均匀化整个表面的信号强度，我们精确地确定了每个区域的焦平面和最佳照明条件。然后，在进行反射率计算之前，我们根据其局部焦点值选择像素，重建了单个高强度光学图像。这种光学图像重建确保了最大强度在整个图像中的均匀分布，并显著提高了信噪比，最大限度地减少了最终反射率图中的伪影。

引用次数: 0

Enhanced fatigue reliability of SnBi solder joints through integrated cobalt nanoparticle reinforcement and magnetic field-assisted reflow 通过集成钴纳米颗粒强化和磁场辅助回流，提高SnBi焊点的疲劳可靠性

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-11-22 DOI: 10.1016/j.microrel.2025.115959

Suleiman Ibrahim Mohammad , Asokan Vasudevan , S. Sujai , Premananda Pradhan , Nivin Joy Thykattusserry , Ripendeep Singh , Yashwant Singh Bisht

This work investigates the combined effects of cobalt (Co) nanoparticle incorporation and magnetic field-assisted reflow processing on the microstructure and fatigue reliability of eutectic 42Sn58Bi solder joints. A set of six sample groups was prepared to independently and jointly assess the influence of 0.8 wt% Co reinforcement, application of a 1.0 T magnetic field, and thermal cycling. The results show that Co nanoparticles refine the eutectic lamellae and suppress intermetallic compound (IMC) coarsening at the interface, while magnetic field-assisted reflow enhances nanoparticle dispersion and produces a fine, honeycomb-like microstructure. After thermal cycling, unreinforced joints exhibited severe coarsening, localized strain accumulation, and brittle fracture, whereas Co nanoparticle-reinforced samples retained greater microstructural stability but showed moderate resistance to fatigue degradation. In contrast, joints fabricated using the combined Co + magnetic field approach maintained a uniformly refined microstructure, distributed stresses more evenly, and demonstrated enhanced hardness, strength, and ductility during prolonged cycling. These findings underscore the strong interdependence among nanoparticle dispersion, IMC evolution, and cyclic deformation behavior, offering a promising strategy for developing durable SnBi solder joints for advanced electronic packaging where thermal and mechanical reliability are paramount.

本文研究了纳米钴掺杂和磁场辅助回流处理对共晶42Sn58Bi焊点组织和疲劳可靠性的综合影响。制备了6组样品，分别对0.8 wt% Co增强、1.0 T磁场和热循环的影响进行独立和联合评估。结果表明，Co纳米颗粒细化了共晶片层，抑制了界面处金属间化合物（IMC）的粗化，而磁场辅助回流增强了纳米颗粒的分散，形成了精细的蜂窝状微观结构。热循环后，未增强的接头表现出严重的粗化、局部应变积累和脆性断裂，而Co纳米颗粒增强的样品保留了更大的微观结构稳定性，但表现出中等的抗疲劳退化能力。相比之下，采用Co +复合磁场方法制备的接头在长时间循环过程中保持了均匀细化的组织，更均匀地分布应力，并表现出更高的硬度、强度和延展性。这些发现强调了纳米颗粒分散，IMC演变和循环变形行为之间的强烈相互依赖性，为开发耐用的SnBi焊点提供了有前途的策略，用于先进的电子封装，其中热可靠性和机械可靠性至关重要。

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引用次数: 0

Mechanisms of electrochemical migration in damp-heat and dew-condensation environments of chip resistors 片式电阻器湿热、结露环境下电化学迁移机理研究

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-11-20 DOI: 10.1016/j.microrel.2025.115958

Hao Zhang , Zixue Jiang , Luntao Wang , Yao Tan , Xiaowen Song , Chao Li , Jialiang Song , Hao Yu , Junsheng Wu , Kui Xiao

Electrochemical migration (ECM) has become a major reliability concern in miniaturized and high-density electronic components, particularly under damp-heat and condensation environments. This study comparatively investigates the ECM behavior of chip resistors exposed to these two moisture regimes. After applying a 6 V bias voltage for 30 min under damp-heat atmospheres with 60 %, 70 %, and 80 % relative humidity, no significant signs of corrosion were observed at the resistor terminals. In damp-heat conditions (up to 90 % RH), the anode underwent gradual Sn oxidation dominated by Sn⁴⁺ species, yet no dendritic structures were observed due to the absence of a continuous electrolyte film. In contrast, condensation environments (RH > 60 %) facilitated the formation of a continuous liquid layer, leading to rapid ECM initiation and the growth of Sn-based dendrites enriched in Sn²⁺ species. Furthermore, as the relative humidity increased, the degree of corrosion at both ends of the resistor became more severe correspondingly. At 90 % RH, simultaneous anodic darkening and aggravated corrosion were observed, confirming the accelerated redox processes within the condensed electrolyte. The results demonstrate that ECM failure occurs only when both a continuous electrolyte film and an external bias potential coexist, providing new insights into moisture-induced reliability degradation of surface-mount components.

电化学迁移（ECM）已经成为小型化和高密度电子元件的主要可靠性问题，特别是在湿热和冷凝环境下。本研究比较研究了贴片电阻在这两种湿度下的ECM行为。在相对湿度分别为60%、70%和80%的湿热环境下，施加6v偏置电压30分钟后，电阻器端子未观察到明显的腐蚀迹象。在湿热条件下（高达90% RH），阳极发生以Sn4+为主的逐渐锡氧化，但由于没有连续的电解质膜，没有观察到枝晶结构。相比之下，冷凝环境（RH > 60%）有利于形成连续的液体层，导致ECM的快速启动和富含Sn2+的sn基枝晶的生长。此外，随着相对湿度的增加，电阻器两端的腐蚀程度也相应加重。在90%相对湿度下，观察到同时阳极变暗和腐蚀加剧，证实了冷凝电解质中的氧化还原过程加速。结果表明，只有当连续电解质膜和外部偏置电位共存时，ECM才会发生故障，这为表面贴装组件的湿致可靠性退化提供了新的见解。

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引用次数: 0

Radiation effect in FD-SOI nanowire FETs due to high dose rate gamma-ray under variable irradiation temperatures 可变辐照温度下高剂量率γ射线对FD-SOI纳米线场效应管的辐射效应

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2025-11-19 DOI: 10.1016/j.microrel.2025.115957

Jonghyeon Ha, Minki Suh, Minsang Ryu, Dabok Lee, Dae-Young Jeon, Jungsik Kim

In this study, the effects of gamma-ray irradiation on fully depleted silicon on insulator (FD-SOI) Nanowire FETs (NWFETs) at different irradiation temperatures (265, 300, and 400 K) were analyzed. For PMOS, positive threshold shift (ΔV_th) owing to interface and oxide traps could be observed regardless of the irradiation temperature. However, NMOS showed a different temperature trend. At 400 K, the oxide traps were cured during annealing, enhancing the influence of interface traps and resulting in a positive ΔV_th. In comparison, at 265 K, the oxide traps became more influential due to reduced hole mobility in the buried oxide (BOX), resulting in a negative ΔV_th. Annealing was performed at room temperature for 24 and 168 h to investigate the ΔV_th owing to the annealing effect (ΔV_th-anneal). In NMOS, a positive ΔV_th-anneal occurred regardless of width (W) as the oxide traps were cured by annealing. PMOS showed a negative ΔV_th-anneal regardless of W.

在本研究中，分析了不同辐照温度（265、300和400 K）下γ射线辐照对全贫硅绝缘体（FD-SOI）纳米线场效应管（nwfet）的影响。对于PMOS，由于界面和氧化物陷阱，无论辐照温度如何，都可以观察到正的阈值位移（ΔVth）。而NMOS则表现出不同的升温趋势。在400 K时，氧化陷阱在退火过程中固化，增强了界面陷阱的影响，产生了正ΔVth。相比之下，在265 K时，由于埋藏氧化物（BOX）的空穴迁移率降低，氧化物捕集器的影响更大，导致负ΔVth。在室温下退火24和168 h，以研究由于退火效应（ΔVth-anneal）而产生的ΔVth。在NMOS中，当氧化阱通过退火固化时，无论宽度(W)如何，都出现了正ΔVth-anneal。PMOS表现为负ΔVth-anneal与W无关。

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