Pub Date : 2025-09-29DOI: 10.1007/s13391-025-00601-8
Dong-Hyeon Kim, Ji-Youn Kwak, Ju-Young Kim, Eun-chae Jeon
Repeated or sustained bending in flexible displays induces mechanical stress on all components, particularly affecting narrow and thin electronic circuits. There is a lack of research that maintains the bending state during observation of cracks and analyzes electrical properties based on crack parameters. This study aims to observe crack parameters under the bending state and analyze the relationship between crack parameters and electrical properties. The results showed that a smaller bending radius induced greater tensile stress on the specimen surface, which in turn increased both crack density and crack width. Measurement of resistance under bending state also revealed that smaller bending radius resulted in larger crack width and corresponding increases in resistance. We also demonstrated that analyzing cracks in the flat state (after bending state) significantly underestimated the effects of crack width in electrical properties because crack width was almost recovered indicating reversible deformation while crack density remained unchanged, representing irreversible damage after bending state. Therefore, crack analysis under actual bending state is essential for accurately evaluating the mechanical and electrical reliability of flexible electronic components.
{"title":"Analysis of Crack Parameters and Electrical Property in Flexible Devices Under Bending State","authors":"Dong-Hyeon Kim, Ji-Youn Kwak, Ju-Young Kim, Eun-chae Jeon","doi":"10.1007/s13391-025-00601-8","DOIUrl":"10.1007/s13391-025-00601-8","url":null,"abstract":"<div><p>Repeated or sustained bending in flexible displays induces mechanical stress on all components, particularly affecting narrow and thin electronic circuits. There is a lack of research that maintains the bending state during observation of cracks and analyzes electrical properties based on crack parameters. This study aims to observe crack parameters under the bending state and analyze the relationship between crack parameters and electrical properties. The results showed that a smaller bending radius induced greater tensile stress on the specimen surface, which in turn increased both crack density and crack width. Measurement of resistance under bending state also revealed that smaller bending radius resulted in larger crack width and corresponding increases in resistance. We also demonstrated that analyzing cracks in the flat state (after bending state) significantly underestimated the effects of crack width in electrical properties because crack width was almost recovered indicating reversible deformation while crack density remained unchanged, representing irreversible damage after bending state. Therefore, crack analysis under actual bending state is essential for accurately evaluating the mechanical and electrical reliability of flexible electronic components.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"843 - 853"},"PeriodicalIF":2.6,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-23DOI: 10.1007/s13391-025-00597-1
Geon Kim, Sunghyun Jang, Hyojung Kim
The well-known von Neumann bottleneck has emerged as a significant obstacle in computationally demanding AI tasks, as frequent data transfers between logic and memory impair system performance and reduce energy efficiency, thereby motivating the exploration of in-memory and neuromorphic computing as potential solutions. Among emerging material options, halide perovskites (HPs) exhibit a tunable bandgap, rapid ion migration, mechanical pliability, and facile low-temperature processing, making them particularly advantageous for next-generation computing. This article surveys HP-based memristors and synaptic transistors, emphasizing their underlying physical mechanisms, capacity to replicate synaptic behavior, and multilevel memory functionality within novel computing architectures. Additionally, we address integration challenges, particularly regarding stability, variability, and scalability. By examining recent advances, we highlight HPs as a promising materials platform for next-generation AI hardware that can overcome the limitations of traditional von Neumann architectures.
{"title":"Halide Perovskite: The Key to Overcoming von Neumann Bottlenecks in AI Workloads","authors":"Geon Kim, Sunghyun Jang, Hyojung Kim","doi":"10.1007/s13391-025-00597-1","DOIUrl":"10.1007/s13391-025-00597-1","url":null,"abstract":"<div><p>The well-known von Neumann bottleneck has emerged as a significant obstacle in computationally demanding AI tasks, as frequent data transfers between logic and memory impair system performance and reduce energy efficiency, thereby motivating the exploration of in-memory and neuromorphic computing as potential solutions. Among emerging material options, halide perovskites (HPs) exhibit a tunable bandgap, rapid ion migration, mechanical pliability, and facile low-temperature processing, making them particularly advantageous for next-generation computing. This article surveys HP-based memristors and synaptic transistors, emphasizing their underlying physical mechanisms, capacity to replicate synaptic behavior, and multilevel memory functionality within novel computing architectures. Additionally, we address integration challenges, particularly regarding stability, variability, and scalability. By examining recent advances, we highlight HPs as a promising materials platform for next-generation AI hardware that can overcome the limitations of traditional von Neumann architectures.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"756 - 783"},"PeriodicalIF":2.6,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-23DOI: 10.1007/s13391-025-00598-0
Seungbu Han, Seungyeon Hong, Sung Hun Lee, Kukhyun Jo, Hyo Jung Kim
We report the incorporation of 2-(N-morpholino)ethanesulfonic acid potassium salt (MESK) as a multifunctional additive in metal-halide perovskite solar cells to enhance crystallinity and suppress defect formation. The sulfonate (-SO3−) and ether (-O-) groups in MESK act as Lewis bases to promote vertical crystal orientation, while the K+ ions mitigate defect formation at grain boundaries and interstitial sites. As a result, the power conversion efficiency (PCE) of the devices improved significantly from 15.09 to 18.03%. To elucidate the underlying mechanism, we performed in-situ grazing-incidence wide-angle X-ray scattering (GIWAXS) during the spin-coating process. The GIWAXS data revealed that MESK induces the formation of intermediate phases prior to the crystallization of the perovskite structure, thereby retarding the crystallization dynamics. This delayed crystallization facilitates crystal growth and the preferential ordering of perovskite films. Our findings highlight the potential of MESK as a versatile additive for improving the performance of perovskite solar cells.
Graphical Abstract
我们报道了在金属卤化物钙钛矿太阳能电池中加入2-(N-morpholino)乙磺酸钾盐(MESK)作为多功能添加剂,以提高结晶度并抑制缺陷的形成。MESK中的磺酸基(- so3−)和醚基(- o -)作为Lewis碱促进晶体垂直取向,而K+离子则减轻晶界和间隙处缺陷的形成。因此,器件的功率转换效率(PCE)从15.09显著提高到18.03%。为了阐明其潜在的机制,我们在自旋涂层过程中进行了原位掠射广角x射线散射(GIWAXS)。GIWAXS数据显示,MESK在钙钛矿结构结晶之前诱导了中间相的形成,从而延缓了结晶动力学。这种延迟结晶有利于晶体生长和钙钛矿薄膜的优先排序。我们的研究结果突出了MESK作为一种通用添加剂的潜力,可以改善钙钛矿太阳能电池的性能。图形抽象
{"title":"Passivation Strategy for High Performance Perovskite Solar Cells Using a Multifunctional Lewis Base Potassium Salt Additive","authors":"Seungbu Han, Seungyeon Hong, Sung Hun Lee, Kukhyun Jo, Hyo Jung Kim","doi":"10.1007/s13391-025-00598-0","DOIUrl":"10.1007/s13391-025-00598-0","url":null,"abstract":"<div><p>We report the incorporation of 2-(N-morpholino)ethanesulfonic acid potassium salt (MESK) as a multifunctional additive in metal-halide perovskite solar cells to enhance crystallinity and suppress defect formation. The sulfonate (-SO<sub>3</sub><sup>−</sup>) and ether (-O-) groups in MESK act as Lewis bases to promote vertical crystal orientation, while the K<sup>+</sup> ions mitigate defect formation at grain boundaries and interstitial sites. As a result, the power conversion efficiency (PCE) of the devices improved significantly from 15.09 to 18.03%. To elucidate the underlying mechanism, we performed in-situ grazing-incidence wide-angle X-ray scattering (GIWAXS) during the spin-coating process. The GIWAXS data revealed that MESK induces the formation of intermediate phases prior to the crystallization of the perovskite structure, thereby retarding the crystallization dynamics. This delayed crystallization facilitates crystal growth and the preferential ordering of perovskite films. Our findings highlight the potential of MESK as a versatile additive for improving the performance of perovskite solar cells.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"24 - 35"},"PeriodicalIF":2.6,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-20DOI: 10.1007/s13391-025-00594-4
Sung Hyeok Lee, Hwan-Jin Jeon
The ongoing development of flexible and wearable devices means that the processes and materials for fabricating stretchable electrodes have been the focus of significant research. We developed a high-performance stretchable conductive film with an elongation of up to 950% by fusing conductive nanofibers and efficient micro-wrinkle-structured films. A large-area micro-wrinkle-structured substrate was fabricated by utilizing the difference in the elastic moduli of Polydimethylsiloxane (PDMS) and Ecoflex. To improve the mechanical performance of the conductive nanofiber film, metal nanofibers were semi-embedded on the surface of the micro-wrinkled structure to strongly bond the film and nanofibers together. The fabrication process of the micro-wrinkle-structured film with the semi-embedded conductive nanofiber network (MWF-SCN) can simply and inexpensively fabricate a large-area micro-wrinkle structure, and the mechanical stability can be significantly improved by semi-embedding highly conductive metal nanofiber networks with an extremely high aspect ratio in the PDMS layer. In addition, the electrical properties were maintained even during repeated bending and stretching. This approach can provide robust conductive networks with improved durability and electrical stability, thus offering promising alternatives for numerous future electronic, optical, display, energy, and sensor devices.
{"title":"Development of a Semi-embedded Nanofiber Network in a Micro-wrinkle Structure Based on a Heterogeneous Polymer Bilayer for High-performance Stretchable Conductive Films","authors":"Sung Hyeok Lee, Hwan-Jin Jeon","doi":"10.1007/s13391-025-00594-4","DOIUrl":"10.1007/s13391-025-00594-4","url":null,"abstract":"<div><p>The ongoing development of flexible and wearable devices means that the processes and materials for fabricating stretchable electrodes have been the focus of significant research. We developed a high-performance stretchable conductive film with an elongation of up to 950% by fusing conductive nanofibers and efficient micro-wrinkle-structured films. A large-area micro-wrinkle-structured substrate was fabricated by utilizing the difference in the elastic moduli of Polydimethylsiloxane (PDMS) and Ecoflex. To improve the mechanical performance of the conductive nanofiber film, metal nanofibers were semi-embedded on the surface of the micro-wrinkled structure to strongly bond the film and nanofibers together. The fabrication process of the micro-wrinkle-structured film with the semi-embedded conductive nanofiber network (MWF-SCN) can simply and inexpensively fabricate a large-area micro-wrinkle structure, and the mechanical stability can be significantly improved by semi-embedding highly conductive metal nanofiber networks with an extremely high aspect ratio in the PDMS layer. In addition, the electrical properties were maintained even during repeated bending and stretching. This approach can provide robust conductive networks with improved durability and electrical stability, thus offering promising alternatives for numerous future electronic, optical, display, energy, and sensor devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"810 - 818"},"PeriodicalIF":2.6,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-20DOI: 10.1007/s13391-025-00592-6
Minhee Kim, Hyeonseok Lee, Kyoungtae Kim, Jinhyun Kim
Organometallic perovskite is well known for its excellent optoelectronic properties, which can enable the next generation of optoelectronics. Despite its excellent charge generation, diffusion length, and bandgap properties, the transport mechanism plays a crucial role in device operation. Generated carriers (holes and electrons) move through both the bulk and interfaces, where defects can trap them. Extensive research has shown that quasi-2D, cation/anion engineering, and MACl-modified are widely applied, leading to enhanced stability and device performance. However, modified perovskites often lead to structural disorientation, resulting in recombination or charge accumulation within the perovskite lattice. In this article, quasi-2D and modified 3D perovskite MACl-modified and cation/anion engineering) are compared. Specifically, phenethylammonium iodide (PEAI) is used as a 2D spacer in quasi-2D perovskite, 3D perovskite is modified by methylammonium chloride (MACl) as an additive, along with methylamine (MA), formamidinium (FA), Iodine, and bromine engineering. Both materials exhibit proper optical and electronic characteristics, but the final solar cell performance differs significantly. Devices with quasi-2D perovskite exhibit multiple n-values with distorted perovskite orientation, whereas device of modified 3D perovskite leads to superior device performance, achieving up to 22.6% power conversion efficiency (PCE). Therefore, this article highlights the importance of 3D perovskite continuity in perovskite solar cells (PSCs).
Graphical Abstract
This study compares quasi-2D and MACl-modified 3D perovskites in solar cells, emphasizing structural orientation and charge transport. Quasi-2D perovskites exhibit multiple n-values with lattice distortion, while modified 3D perovskites, engineered via cation/anion tuning and MACl-modification, retain structural integrity, achieving 22.6% power conversion efficiency. These findings underscore the importance of lattice continuity in enhancing performance.
{"title":"Structural Continuity and Orientation Effects of Organometallic Perovskites","authors":"Minhee Kim, Hyeonseok Lee, Kyoungtae Kim, Jinhyun Kim","doi":"10.1007/s13391-025-00592-6","DOIUrl":"10.1007/s13391-025-00592-6","url":null,"abstract":"<div><p>Organometallic perovskite is well known for its excellent optoelectronic properties, which can enable the next generation of optoelectronics. Despite its excellent charge generation, diffusion length, and bandgap properties, the transport mechanism plays a crucial role in device operation. Generated carriers (holes and electrons) move through both the bulk and interfaces, where defects can trap them. Extensive research has shown that quasi-2D, cation/anion engineering, and MACl-modified are widely applied, leading to enhanced stability and device performance. However, modified perovskites often lead to structural disorientation, resulting in recombination or charge accumulation within the perovskite lattice. In this article, quasi-2D and modified 3D perovskite MACl-modified and cation/anion engineering) are compared. Specifically, phenethylammonium iodide (PEAI) is used as a 2D spacer in quasi-2D perovskite, 3D perovskite is modified by methylammonium chloride (MACl) as an additive, along with methylamine (MA), formamidinium (FA), Iodine, and bromine engineering. Both materials exhibit proper optical and electronic characteristics, but the final solar cell performance differs significantly. Devices with quasi-2D perovskite exhibit multiple n-values with distorted perovskite orientation, whereas device of modified 3D perovskite leads to superior device performance, achieving up to 22.6% power conversion efficiency (PCE). Therefore, this article highlights the importance of 3D perovskite continuity in perovskite solar cells (PSCs).</p><h3>Graphical Abstract</h3><p>This study compares quasi-2D and MACl-modified 3D perovskites in solar cells, emphasizing structural orientation and charge transport. Quasi-2D perovskites exhibit multiple n-values with lattice distortion, while modified 3D perovskites, engineered via cation/anion tuning and MACl-modification, retain structural integrity, achieving 22.6% power conversion efficiency. These findings underscore the importance of lattice continuity in enhancing performance.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"790 - 799"},"PeriodicalIF":2.6,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-10DOI: 10.1007/s13391-025-00595-3
Sung Ju Hong
We report parallel-conduction-based thermoelectric responses in chemical vapor deposition grown hexagonal twisted bilayer graphene. We observe that two independent graphene layers form various transfer characteristics in terms of layer-asymmetric charge distribution, which can be understood by a two parallel conductor model. The thermoelectric responses exhibit distinct behavior from single systems of graphene layers, which can be explained by a two band model due to the parallel conduction. Based on the charge transport mechanism, specific transfer characteristic is demonstrated by asymmetrically tuning charge-carrier distribution between graphene layers by polymer-based dual-gate configuration.
{"title":"Parallel-Conduction-Based Thermoelectric Responses in Chemical Vapor Deposition Grown Twisted Bilayer Graphene","authors":"Sung Ju Hong","doi":"10.1007/s13391-025-00595-3","DOIUrl":"10.1007/s13391-025-00595-3","url":null,"abstract":"<p>We report parallel-conduction-based thermoelectric responses in chemical vapor deposition grown hexagonal twisted bilayer graphene. We observe that two independent graphene layers form various transfer characteristics in terms of layer-asymmetric charge distribution, which can be understood by a two parallel conductor model. The thermoelectric responses exhibit distinct behavior from single systems of graphene layers, which can be explained by a two band model due to the parallel conduction. Based on the charge transport mechanism, specific transfer characteristic is demonstrated by asymmetrically tuning charge-carrier distribution between graphene layers by polymer-based dual-gate configuration.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"784 - 789"},"PeriodicalIF":2.6,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-30DOI: 10.1007/s13391-025-00593-5
Hyojung Kim
The growing expansion of data-intensive technologies is driving the search for technology capable of brain-like efficiency and adaptability. Among new two-dimensional (2D) systems, MXenes have received attention because their metallic lattices pair strong carrier mobility with surface terminations that enable ion storage. The article covers recent improvements in MXene-based resistive switching memories arranged as artificial synapses. We address the chemical origins of their adjustable conductivity, the fabrication approaches that permit transparent and flexible devices, and the processes that support analog weight modulation at low operating energy. Demonstrations across optoelectronic, gas-responsive, and pressure-sensitive platforms reveal that MXene synapses may reproduce optical, olfactory, and tactile learning within the same material family. Their conductance states remain stable whether devices are bent, folded, or weaved, offering prospects for seamless integration into wearable neural interfaces that incorporate sensing, memory, and logic along a single thread without loss of signal quality. The remaining challenges are examined. Oxidation under atmospheric conditions reduces electrical performance, and batch variation restricts array-level homogeneity. This perspective outlines unmet questions and recommends experimental priorities.
{"title":"Multimodal MXene Artificial Synapses Realizing Optoelectronic, Olfactory, and Tactile Neuromorphic Memory in Wearable Devices","authors":"Hyojung Kim","doi":"10.1007/s13391-025-00593-5","DOIUrl":"10.1007/s13391-025-00593-5","url":null,"abstract":"<div><p>The growing expansion of data-intensive technologies is driving the search for technology capable of brain-like efficiency and adaptability. Among new two-dimensional (2D) systems, MXenes have received attention because their metallic lattices pair strong carrier mobility with surface terminations that enable ion storage. The article covers recent improvements in MXene-based resistive switching memories arranged as artificial synapses. We address the chemical origins of their adjustable conductivity, the fabrication approaches that permit transparent and flexible devices, and the processes that support analog weight modulation at low operating energy. Demonstrations across optoelectronic, gas-responsive, and pressure-sensitive platforms reveal that MXene synapses may reproduce optical, olfactory, and tactile learning within the same material family. Their conductance states remain stable whether devices are bent, folded, or weaved, offering prospects for seamless integration into wearable neural interfaces that incorporate sensing, memory, and logic along a single thread without loss of signal quality. The remaining challenges are examined. Oxidation under atmospheric conditions reduces electrical performance, and batch variation restricts array-level homogeneity. This perspective outlines unmet questions and recommends experimental priorities.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"743 - 755"},"PeriodicalIF":2.6,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-23DOI: 10.1007/s13391-025-00591-7
Hakjun Kim, Intae Kim, Wonsik Lee, Jae Young Hwang, Sarah Eunkyung Kim, Young-Chang Joo, Hyejin Jang
Copper-to-Copper (Cu-to-Cu) bonding with metal passivation addresses fundamental oxidation and thermal budget in Cu-to-Cu bonding, yet thermal transport characterization remains unexplored despite critical importance for thermal management of three-dimensional integration. This study investigates the thermal conductance of Cu-to-Cu bonded interconnects with metal passivation, where quantifying the discrepancy between predicted and experimentally measured thermal transport properties in three-dimensional integrated structures enables design validation and optimization of thermal management strategies under conditions of elevated thermal density where thermal management becomes critical. We developed a time-domain thermoreflectance (TDTR) methodology employing transparent sapphire substrates to optically access the bonded layer. A tantalum (Ta) diffusion barrier is also employed to prevent aluminum-copper interdiffusion during bonding, ensuring measurement integrity. Multilayer thermal modeling incorporating comprehensive sensitivity analysis enables precise determination of the thermal conductance of localized bonded region, overcoming fundamental limitations of conventional approaches that measure bulk thermal properties across entire bonded structures. Systematic optimization of the Cu layer thickness of each side maximizes measurement sensitivity to Cu-to-Cu bonded interconnects while suppressing peripheral contributions that would otherwise compromise measurement fidelity. Comprehensive structural and material characterization via transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and selected area electron diffraction (SAED) pattern analysis revealed correlation between interfacial structure and measured thermal transport properties in metal-passivated Cu-to-Cu bonded interconnects. The measured conductance values, an order of magnitude below Wiedemann-Franz predictions from electrical resistivity data, indicate dominant electron scattering mechanisms at heterogeneous interfaces, microstructural discontinuities, and oxygen-rich regions within the bonded layer. These findings provide critical thermal management insights for 3D integrated electronic systems employing Cu-to-Cu bonding with metal passivation.
{"title":"Characterization of Thermal Conductance of Copper-to-Copper Bonded Interconnects with Metal Passivation for Three-Dimensional Integration","authors":"Hakjun Kim, Intae Kim, Wonsik Lee, Jae Young Hwang, Sarah Eunkyung Kim, Young-Chang Joo, Hyejin Jang","doi":"10.1007/s13391-025-00591-7","DOIUrl":"10.1007/s13391-025-00591-7","url":null,"abstract":"<div><p>Copper-to-Copper (Cu-to-Cu) bonding with metal passivation addresses fundamental oxidation and thermal budget in Cu-to-Cu bonding, yet thermal transport characterization remains unexplored despite critical importance for thermal management of three-dimensional integration. This study investigates the thermal conductance of Cu-to-Cu bonded interconnects with metal passivation, where quantifying the discrepancy between predicted and experimentally measured thermal transport properties in three-dimensional integrated structures enables design validation and optimization of thermal management strategies under conditions of elevated thermal density where thermal management becomes critical. We developed a time-domain thermoreflectance (TDTR) methodology employing transparent sapphire substrates to optically access the bonded layer. A tantalum (Ta) diffusion barrier is also employed to prevent aluminum-copper interdiffusion during bonding, ensuring measurement integrity. Multilayer thermal modeling incorporating comprehensive sensitivity analysis enables precise determination of the thermal conductance of localized bonded region, overcoming fundamental limitations of conventional approaches that measure bulk thermal properties across entire bonded structures. Systematic optimization of the Cu layer thickness of each side maximizes measurement sensitivity to Cu-to-Cu bonded interconnects while suppressing peripheral contributions that would otherwise compromise measurement fidelity. Comprehensive structural and material characterization via transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and selected area electron diffraction (SAED) pattern analysis revealed correlation between interfacial structure and measured thermal transport properties in metal-passivated Cu-to-Cu bonded interconnects. The measured conductance values, an order of magnitude below Wiedemann-Franz predictions from electrical resistivity data, indicate dominant electron scattering mechanisms at heterogeneous interfaces, microstructural discontinuities, and oxygen-rich regions within the bonded layer. These findings provide critical thermal management insights for 3D integrated electronic systems employing Cu-to-Cu bonding with metal passivation.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"829 - 842"},"PeriodicalIF":2.6,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As a promising sustainable energy conversion technology, anion exchange membrane fuel cells (AEMFCs) have attracted substantial research attention due to their eco-friendly characteristics, cost advantages, and potential for high efficiency. The advancement of these systems, however, remains fundamentally limited by the challenge of optimizing the critical trade-off between ionic conductivity and dimensional stability in anion exchange membranes (AEMs). This investigation proposes a novel membrane architecture combining ether-free polymer matrices with piperidinium cationic moieties to address chemical durability concerns. A series of cross-linked poly(p-triphenylpyridine) membranes were successfully fabricated through optimized Friedel-Crafts alkylation processes, incorporating pyridine-derived branching structures alongside conventional quaternary ammonium cross-linkers. The optimized QAPTTP-40% membrane exhibits outstanding electrochemical properties, achieving temperature-enhanced ionic conductivity of 116.2 mS cm⁻¹ at 80 °C through cooperative effects of branched morphology and cross-linked framework. Extended alkaline stability testing (15 days in 2 M NaOH at 80 °C) revealed exceptional chemical resilience with 85.1% conductivity retention. Structural characterization demonstrated advantageous material properties including an elevated ion exchange capacity of 2.94 mmol g⁻¹ coupled with robust mechanical strength (39.4 MPa tensile strength at ambient conditions). The synergistic combination of efficient ion transport pathways, superior alkaline durability, and mechanical robustness establishes this innovative AEM design as a competitive platform for next-generation fuel cell development. These findings provide critical insights into the rational design of high-performance anion exchange membranes through molecular engineering of polymer architectures and cationic group selection.
阴离子交换膜燃料电池(aemfc)作为一种很有前途的可持续能源转换技术,以其生态友好、成本优势和高效潜力而备受关注。然而,这些系统的进步仍然受到优化阴离子交换膜(AEMs)中离子电导率和尺寸稳定性之间关键权衡的挑战的限制。本研究提出了一种新的膜结构,结合无醚聚合物基质和哌啶阳离子基团,以解决化学耐久性问题。通过优化的Friedel-Crafts烷基化工艺成功制备了一系列交联聚对三苯基吡啶膜,并将吡啶衍生的分支结构与传统的季铵交联剂结合。优化后的QAPTTP-40%膜具有优异的电化学性能,通过支链形态和交联框架的协同作用,在80℃时离子电导率达到116.2 mS cm⁻¹。延长碱性稳定性测试(在80°C的2 M NaOH中浸泡15天)显示出优异的化学弹性,电导率保持在85.1%。结构表征证明了材料的优点,包括2.94 mmol g的离子交换容量(毒血症)和坚固的机械强度(环境条件下的抗拉强度为39.4 MPa)。高效离子传输途径、优异的碱性耐久性和机械坚固性的协同结合,使这种创新的AEM设计成为下一代燃料电池开发的竞争平台。这些发现为通过聚合物结构的分子工程和阳离子基选择来合理设计高性能阴离子交换膜提供了重要的见解。
{"title":"Synthesis and Properties of Branched-Crosslinked Poly(aryl piperidinium) Anion Exchange Membranes","authors":"Yuanyuan Zhou, Qingyang Xiao, Wenjie Li, Song Li, Shuchun Yu, Pengyan Guo","doi":"10.1007/s13391-025-00590-8","DOIUrl":"10.1007/s13391-025-00590-8","url":null,"abstract":"<div><p>As a promising sustainable energy conversion technology, anion exchange membrane fuel cells (AEMFCs) have attracted substantial research attention due to their eco-friendly characteristics, cost advantages, and potential for high efficiency. The advancement of these systems, however, remains fundamentally limited by the challenge of optimizing the critical trade-off between ionic conductivity and dimensional stability in anion exchange membranes (AEMs). This investigation proposes a novel membrane architecture combining ether-free polymer matrices with piperidinium cationic moieties to address chemical durability concerns. A series of cross-linked poly(p-triphenylpyridine) membranes were successfully fabricated through optimized Friedel-Crafts alkylation processes, incorporating pyridine-derived branching structures alongside conventional quaternary ammonium cross-linkers. The optimized QAPTTP-40% membrane exhibits outstanding electrochemical properties, achieving temperature-enhanced ionic conductivity of 116.2 mS cm⁻¹ at 80 °C through cooperative effects of branched morphology and cross-linked framework. Extended alkaline stability testing (15 days in 2 M NaOH at 80 °C) revealed exceptional chemical resilience with 85.1% conductivity retention. Structural characterization demonstrated advantageous material properties including an elevated ion exchange capacity of 2.94 mmol g⁻¹ coupled with robust mechanical strength (39.4 MPa tensile strength at ambient conditions). The synergistic combination of efficient ion transport pathways, superior alkaline durability, and mechanical robustness establishes this innovative AEM design as a competitive platform for next-generation fuel cell development. These findings provide critical insights into the rational design of high-performance anion exchange membranes through molecular engineering of polymer architectures and cationic group selection.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"726 - 741"},"PeriodicalIF":2.6,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-12DOI: 10.1007/s13391-025-00589-1
In-Kyoung Ahn, Intae Kim, Young-Chang Joo
In this study, we propose an anion vacancy engineering process for CoS2-based nanomaterials using carbon monoxide (CO) thermal treatment. This process enables precise control over sulfur vacancy formation and phase transitions while preserving structural integrity through the tuning of variables such as temperature, annealing time, and gas composition.
Notably, changes in the oxidation state of cobalt and the chemical state of sulfur were systematically observed as a function of the reaction conditions, confirming that the controlled structural evolution of cobalt sulfides was mediated by selective sulfur extraction. Moreover, the values from thermodynamic calculations were in good agreement with the experimental results, demonstrating that the sulfur extraction process follows a thermodynamically favorable pathway.
The versatility of this approach extends beyond specific materials or processing conditions and can be applied to a wide range of transition metal compounds. Additionally, the process demonstrates excellent scalability, as it is not constrained by sample quantity. The ability to finely control structural and chemical properties highlights the applicability of this method to various fields where defect engineering is critical, such as electrocatalysis and energy storage devices.
In particular, sulfur-deficient CoS2 demonstrated superior electrocatalytic performance, with an overpotential of only 327 mV at 10 mA cm− 2 for the oxygen evolution reaction, outperforming conventional noble metal catalysts by approximately 60 mV. This result underscores the practical value and broad applicability of the proposed process.
在这项研究中,我们提出了一种使用一氧化碳(CO)热处理的阴离子空位工程工艺。该过程可以精确控制硫空位的形成和相变,同时通过调节温度、退火时间和气体成分等变量保持结构完整性。值得注意的是,系统地观察到钴的氧化态和硫的化学状态的变化作为反应条件的函数,证实了选择性硫萃取介导了钴硫化物的可控结构演化。此外,热力学计算值与实验结果吻合较好,表明硫萃取过程遵循热力学有利的途径。这种方法的多功能性超出了特定的材料或加工条件,可以应用于广泛的过渡金属化合物。此外,该过程表现出良好的可扩展性,因为它不受样本数量的限制。精细控制结构和化学性质的能力突出了该方法在各种缺陷工程至关重要的领域的适用性,例如电催化和储能设备。特别是,缺硫CoS2表现出优异的电催化性能,在10 mA cm−2下,析氧反应的过电位仅为327 mV,比传统贵金属催化剂高出约60 mV。这一结果强调了所提出的过程的实用价值和广泛适用性。
{"title":"Sulfur Extraction for Stoichiometry Control of Cobalt Sulfides by Reducing Gas Annealing","authors":"In-Kyoung Ahn, Intae Kim, Young-Chang Joo","doi":"10.1007/s13391-025-00589-1","DOIUrl":"10.1007/s13391-025-00589-1","url":null,"abstract":"<div><p>In this study, we propose an anion vacancy engineering process for CoS<sub>2</sub>-based nanomaterials using carbon monoxide (CO) thermal treatment. This process enables precise control over sulfur vacancy formation and phase transitions while preserving structural integrity through the tuning of variables such as temperature, annealing time, and gas composition.</p><p>Notably, changes in the oxidation state of cobalt and the chemical state of sulfur were systematically observed as a function of the reaction conditions, confirming that the controlled structural evolution of cobalt sulfides was mediated by selective sulfur extraction. Moreover, the values from thermodynamic calculations were in good agreement with the experimental results, demonstrating that the sulfur extraction process follows a thermodynamically favorable pathway.</p><p>The versatility of this approach extends beyond specific materials or processing conditions and can be applied to a wide range of transition metal compounds. Additionally, the process demonstrates excellent scalability, as it is not constrained by sample quantity. The ability to finely control structural and chemical properties highlights the applicability of this method to various fields where defect engineering is critical, such as electrocatalysis and energy storage devices.</p><p>In particular, sulfur-deficient CoS<sub>2</sub> demonstrated superior electrocatalytic performance, with an overpotential of only 327 mV at 10 mA cm<sup>− 2</sup> for the oxygen evolution reaction, outperforming conventional noble metal catalysts by approximately 60 mV. This result underscores the practical value and broad applicability of the proposed process.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"715 - 725"},"PeriodicalIF":2.6,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}