Electronic Materials Letters最新文献_第3页

A Novel Sensor for the Detection of n-Butanol Based on CoMn2O4 Nanoparticles 基于 CoMn2O4 纳米粒子的新型正丁醇检测传感器

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-05-13 DOI: 10.1007/s13391-024-00498-9

Juan Pablo Morán-Lázaro, Maykel Courel-Piedrahita, Alex Guillén-Bonilla, Florentino López-Urías, Héctor Guillén-Bonilla, Víctor Manuel Soto-García, Aldo Palafox-Corona, David Alberto Hernández-Poot

In this paper, we studied the alcohol-sensing properties of CoMn₂O₄ nanoparticles for the first time. The CoMn₂O₄ nanoparticles were prepared via a simple microwave-assisted colloidal method using cobalt nitrate, manganese nitrate, dioctyl sulfosuccinate sodium salt, and ethylene glycol as a solvent. Various techniques were used to characterize the structural, morphological, and optical properties of CoMn₂O₄. The crystal structure of CoMn₂O₄ was found after calcination at a temperature of 400 °C. The Raman spectrum showed seven vibrational bands, while the optical absorption spectrum showed three bands, confirming the spinel CoMn₂O₄. Morphological analysis revealed that the porous microstructure of CoMn₂O₄ was composed of nanoparticles with a size distribution of 16 to 58 nm. Gas sensors were fabricated with the CoMn₂O₄ powders calcined at 400 °C using the brush-coating method, and experimental results showed that CoMn₂O₄ nanoparticles were more sensitive to n-butanol than isopropanol and ethanol at an operating temperature of 185 °C. The CoMn₂O₄ sensor showed a response of 6.6 at 50 ppm n-butanol with good stability, reproducibility, and repeatability. The present article provides a new sensing material that could be used as an n-butanol sensor with significant benefits for human health.

Graphical Abstract

本文首次研究了 CoMn2O4 纳米粒子的酒精感应特性。以硝酸钴、硝酸锰、磺基琥珀酸二辛酯钠盐和乙二醇为溶剂，通过简单的微波辅助胶体法制备了 CoMn2O4 纳米粒子。研究人员采用多种技术对 CoMn2O4 的结构、形态和光学特性进行了表征。在 400 °C 温度下煅烧后，发现了 CoMn2O4 的晶体结构。拉曼光谱显示了 7 条振动带，而光学吸收光谱显示了 3 条带，证实了尖晶石 CoMn2O4 的存在。形态分析表明，CoMn2O4 的多孔微结构由尺寸分布为 16 至 58 纳米的纳米颗粒组成。实验结果表明，在工作温度为 185 ℃ 时，CoMn2O4 纳米粒子对正丁醇的灵敏度高于异丙醇和乙醇。CoMn2O4 传感器在 50 ppm 正丁醇浓度下的响应为 6.6，具有良好的稳定性、再现性和重复性。本文提供了一种可用作正丁醇传感器的新型传感材料，对人类健康大有裨益。

{"title":"A Novel Sensor for the Detection of n-Butanol Based on CoMn2O4 Nanoparticles","authors":"Juan Pablo Morán-Lázaro, Maykel Courel-Piedrahita, Alex Guillén-Bonilla, Florentino López-Urías, Héctor Guillén-Bonilla, Víctor Manuel Soto-García, Aldo Palafox-Corona, David Alberto Hernández-Poot","doi":"10.1007/s13391-024-00498-9","DOIUrl":"10.1007/s13391-024-00498-9","url":null,"abstract":"<div><p>In this paper, we studied the alcohol-sensing properties of CoMn<sub>2</sub>O<sub>4</sub> nanoparticles for the first time. The CoMn<sub>2</sub>O<sub>4</sub> nanoparticles were prepared via a simple microwave-assisted colloidal method using cobalt nitrate, manganese nitrate, dioctyl sulfosuccinate sodium salt, and ethylene glycol as a solvent. Various techniques were used to characterize the structural, morphological, and optical properties of CoMn<sub>2</sub>O<sub>4</sub>. The crystal structure of CoMn<sub>2</sub>O<sub>4</sub> was found after calcination at a temperature of 400 °C. The Raman spectrum showed seven vibrational bands, while the optical absorption spectrum showed three bands, confirming the spinel CoMn<sub>2</sub>O<sub>4</sub>. Morphological analysis revealed that the porous microstructure of CoMn<sub>2</sub>O<sub>4</sub> was composed of nanoparticles with a size distribution of 16 to 58 nm. Gas sensors were fabricated with the CoMn<sub>2</sub>O<sub>4</sub> powders calcined at 400 °C using the brush-coating method, and experimental results showed that CoMn<sub>2</sub>O<sub>4</sub> nanoparticles were more sensitive to <i>n</i>-butanol than isopropanol and ethanol at an operating temperature of 185 °C. The CoMn<sub>2</sub>O<sub>4</sub> sensor showed a response of 6.6 at 50 ppm <i>n</i>-butanol with good stability, reproducibility, and repeatability. The present article provides a new sensing material that could be used as an <i>n</i>-butanol sensor with significant benefits for human health.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"610 - 620"},"PeriodicalIF":2.1,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140938205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-Dimensional Leafy Fe/N-Doped Carbon Nanomaterials Derived from Vitamin C-Modified ZIF-L for Efficient Oxygen Reduction Reaction 维生素 C 改性 ZIF-L 衍生的二维叶状 Fe/N 掺杂碳纳米材料用于高效氧还原反应

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-05-08 DOI: 10.1007/s13391-024-00496-x

Yating Zhang, Xiaobo Wang, Meng Chen, Pei He, Zhenghan Kong

Oxygen reduction reaction (ORR) is an important half-reaction in various energy devices such as fuel cells. Here, 2D dendritic Fe/N co-doped carbon-based nanosheet composites (L-Fe-CNT@NCS-900) were obtained by high-temperature calcination using ZIF-L generated in the aqueous phase as a precursor and Vitamin C as a modifier. It is found that the catalysts calcined at 900℃ possessed the large specific surface area and the pore size distribution graphs showed a narrow micropore size distribution centered at about 1.8 nm. Furthermore, the Fe-N-C species was detected, which further improved the ORR performance as an active center. Thus, the L-Fe-CNT@NCS-900 calcined at 900 °C achieved the best ORR performance with a half-wave potential (E_1/2) of 0.85 V, and the hydrogen peroxide yield is only about 4% during the ORR process. Meanwhile, L-Fe-CNT@NCS-900 exhibited outstanding methanol resistance. This work proposes a new strategy for constructing an efficient electrocatalysts for oxygen reduction reaction.

Graphical Abstract

氧还原反应（ORR）是燃料电池等各种能源设备中的重要半反应。本文以水相中生成的 ZIF-L 为前驱体，维生素 C 为改性剂，通过高温煅烧获得了二维树枝状 Fe/N 共掺杂碳基纳米片复合材料（L-Fe-CNT@NCS-900）。研究发现，在 900℃下煅烧的催化剂具有较大的比表面积，孔径分布图显示出以约 1.8 nm 为中心的窄微孔分布。此外，还检测到了作为活性中心的 Fe-N-C 物种，这进一步提高了 ORR 性能。因此，在 900 °C 煅烧的 L-Fe-CNT@NCS-900 实现了最佳的 ORR 性能，其半波电位（E1/2）为 0.85 V，在 ORR 过程中过氧化氢的产率仅为 4%。同时，L-Fe-CNT@NCS-900 还表现出优异的耐甲醇性。该研究为构建高效的氧还原反应电催化剂提出了一种新策略。

{"title":"Two-Dimensional Leafy Fe/N-Doped Carbon Nanomaterials Derived from Vitamin C-Modified ZIF-L for Efficient Oxygen Reduction Reaction","authors":"Yating Zhang, Xiaobo Wang, Meng Chen, Pei He, Zhenghan Kong","doi":"10.1007/s13391-024-00496-x","DOIUrl":"10.1007/s13391-024-00496-x","url":null,"abstract":"<div><p>Oxygen reduction reaction (ORR) is an important half-reaction in various energy devices such as fuel cells. Here, 2D dendritic Fe/N co-doped carbon-based nanosheet composites (L-Fe-CNT@NCS-900) were obtained by high-temperature calcination using ZIF-L generated in the aqueous phase as a precursor and Vitamin C as a modifier. It is found that the catalysts calcined at 900℃ possessed the large specific surface area and the pore size distribution graphs showed a narrow micropore size distribution centered at about 1.8 nm. Furthermore, the Fe-N-C species was detected, which further improved the ORR performance as an active center. Thus, the L-Fe-CNT@NCS-900 calcined at 900 °C achieved the best ORR performance with a half-wave potential (E<sub>1/2</sub>) of 0.85 V, and the hydrogen peroxide yield is only about 4% during the ORR process. Meanwhile, L-Fe-CNT@NCS-900 exhibited outstanding methanol resistance. This work proposes a new strategy for constructing an efficient electrocatalysts for oxygen reduction reaction.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"592 - 602"},"PeriodicalIF":2.1,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140938206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tl3PbI5 Nanocrystals for Ultraviolet Photovoltaics 用于紫外线光伏的 Tl3PbI5 纳米晶体

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-05-04 DOI: 10.1007/s13391-024-00499-8

Wooyeon Kim, Bonkee Koo, Jaeyeon Kim, In Choi, Seongyeon Hwang, Min Jae Ko

Tl₃PbI₅ exhibits a bandgap energy suitable for absorbing visible and ultraviolet spectra along with a high absorption capability, rendering it a promising candidate for a broader range of solar energy applications. However, its applicability as a light absorber in solar cells is yet to be experimentally confirmed. In this study, we systemically investigate the synthesis process and the crystallographic and chemical properties of Tl₃PbI₅ nanocrystals. These results enable the optimization of Tl₃PbI₅ nanocrystals for use as a light absorber. In addition, a solid-state ligand exchange method employing methyl acetate (MeOAc) is introduced to construct a Tl₃PbI₅ absorption layer for photovoltaic applications. This method facilitates the preparation of multilayer thin films with precise thickness control. The optimally designed Tl₃PbI₅-based solar cell achieves a power conversion efficiency (PCE) of 0.20%. Furthermore, the device retains over 90% of its PCE after 2000 h at 25 °C and 60% relative humidity, indicating the potential of Tl₃PbI₅-based photovoltaics for reliable solar energy harvesting.

Graphical Abstract

Tl3PbI5 具有适合吸收可见光和紫外线光谱的带隙能量以及高吸收能力，因此有望在更广泛的太阳能应用领域大显身手。然而，它在太阳能电池中作为光吸收剂的适用性还有待实验证实。在本研究中，我们系统地研究了 Tl3PbI5 纳米晶体的合成过程、晶体学和化学特性。这些结果有助于优化 Tl3PbI5 纳米晶体作为光吸收剂的用途。此外，还介绍了一种采用醋酸甲酯（MeOAc）的固态配体交换方法，以构建用于光伏应用的 Tl3PbI5 吸收层。这种方法有助于制备具有精确厚度控制的多层薄膜。经过优化设计的基于 Tl3PbI5 的太阳能电池实现了 0.20% 的功率转换效率 (PCE)。此外，该装置在 25 °C 和 60% 相对湿度条件下工作 2000 小时后，其 PCE 仍保持在 90% 以上，这表明基于 Tl3PbI5 的光伏器件具有可靠的太阳能收集潜力。

{"title":"Tl3PbI5 Nanocrystals for Ultraviolet Photovoltaics","authors":"Wooyeon Kim, Bonkee Koo, Jaeyeon Kim, In Choi, Seongyeon Hwang, Min Jae Ko","doi":"10.1007/s13391-024-00499-8","DOIUrl":"10.1007/s13391-024-00499-8","url":null,"abstract":"<div><p>Tl<sub>3</sub>PbI<sub>5</sub> exhibits a bandgap energy suitable for absorbing visible and ultraviolet spectra along with a high absorption capability, rendering it a promising candidate for a broader range of solar energy applications. However, its applicability as a light absorber in solar cells is yet to be experimentally confirmed. In this study, we systemically investigate the synthesis process and the crystallographic and chemical properties of Tl<sub>3</sub>PbI<sub>5</sub> nanocrystals. These results enable the optimization of Tl<sub>3</sub>PbI<sub>5</sub> nanocrystals for use as a light absorber. In addition, a solid-state ligand exchange method employing methyl acetate (MeOAc) is introduced to construct a Tl<sub>3</sub>PbI<sub>5</sub> absorption layer for photovoltaic applications. This method facilitates the preparation of multilayer thin films with precise thickness control. The optimally designed Tl<sub>3</sub>PbI<sub>5</sub>-based solar cell achieves a power conversion efficiency (<i>PCE</i>) of 0.20%. Furthermore, the device retains over 90% of its <i>PCE</i> after 2000 h at 25 °C and 60% relative humidity, indicating the potential of Tl<sub>3</sub>PbI<sub>5</sub>-based photovoltaics for reliable solar energy harvesting.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"584 - 591"},"PeriodicalIF":2.1,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140884163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phenyltrimethylammonium as an Interlayer Spacer for Stable Formamidinium-Based Quasi-2D Perovskite Solar Cells 苯基三甲基铵作为稳定的甲脒基准二维过氧化物太阳能电池的层间垫片

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-04-26 DOI: 10.1007/s13391-024-00497-w

Bumjin Gil, Jinhyun Kim, Byungwoo Park

Quasi-2D perovskite materials possess great potential in improving the stability of perovskite solar cells due to their superior chemical and structural stableness compared to 3D counterparts. Here, commonly-used 3D formamidinum lead iodide (FAPbI₃) perovskite is alloyed by addition of quaternary cation phenyltrimethylammonium (PTMA) up to 33% (n = 5), which forms quasi-2D perovskite phase that acts beneficial to charge transport and stability. Since the detailed structural analyses regarding this quaternary ammonium salt is still lacking, we attempt to provide how the presence of 2D perovskite affects the crystal structure based on x-ray diffraction techniques. It is shown that PTMA cations directs FAPbI₃ to have textured orientation and reduced strains. This led to enhanced extraction of photogenerated carriers and reduced defects, making it promising material for solar cell applications. The champion device remains stable under 60 °C or 1 sun for 700 h, demonstrating its potential for optoelectronic devices requiring long-term stability.

Graphical Abstract

准二维透辉石材料具有优于三维透辉石材料的化学和结构稳定性，因此在提高透辉石太阳能电池的稳定性方面具有巨大潜力。在这里，通过添加33%（n = 5）的季阳离子苯基三甲基铵（PTMA），将常用的三维甲酰胺碘化铅（FAPbI3）包晶石合金化，从而形成有利于电荷传输和稳定性的准二维包晶石相。由于目前还缺乏对这种季铵盐的详细结构分析，我们试图根据 X 射线衍射技术来说明二维包晶的存在如何影响晶体结构。结果表明，PTMA 阳离子使 FAPbI3 具有纹理取向并降低了应变。这提高了光生载流子的萃取率，减少了缺陷，使其成为太阳能电池应用的理想材料。冠军器件在 60 °C 或 1 个太阳下可稳定工作 700 小时，这证明了它在需要长期稳定性的光电器件方面的潜力。

{"title":"Phenyltrimethylammonium as an Interlayer Spacer for Stable Formamidinium-Based Quasi-2D Perovskite Solar Cells","authors":"Bumjin Gil, Jinhyun Kim, Byungwoo Park","doi":"10.1007/s13391-024-00497-w","DOIUrl":"10.1007/s13391-024-00497-w","url":null,"abstract":"<div><p>Quasi-2D perovskite materials possess great potential in improving the stability of perovskite solar cells due to their superior chemical and structural stableness compared to 3D counterparts. Here, commonly-used 3D formamidinum lead iodide (FAPbI<sub>3</sub>) perovskite is alloyed by addition of quaternary cation phenyltrimethylammonium (PTMA) up to 33% (<i>n</i> = 5), which forms quasi-2D perovskite phase that acts beneficial to charge transport and stability. Since the detailed structural analyses regarding this quaternary ammonium salt is still lacking, we attempt to provide how the presence of 2D perovskite affects the crystal structure based on x-ray diffraction techniques. It is shown that PTMA cations directs FAPbI<sub>3</sub> to have textured orientation and reduced strains. This led to enhanced extraction of photogenerated carriers and reduced defects, making it promising material for solar cell applications. The champion device remains stable under 60 °C or 1 sun for 700 h, demonstrating its potential for optoelectronic devices requiring long-term stability.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 6","pages":"791 - 798"},"PeriodicalIF":2.1,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140799574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetite–Polyaniline Nanocomposite for Non-Volatile Memory and Neuromorphic Computing Applications 用于非易失性存储器和神经形态计算应用的磁铁矿-多苯胺纳米复合材料

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-04-16 DOI: 10.1007/s13391-024-00495-y

Ishika U. Shah, Snehal L. Patil, Sushilkumar A. Jadhav, Tukaram D. Dongale, Rajanish K. Kamat

Conducting polymers are proving to be useful for construction of resistive switching devices. This work reports the fabrication of a resistive switching device using Magnetite-Polyaniline (Fe₃O₄-PANI) nanocomposite. The device showed good non-volatile memory properties and can mimic neuromorphic synaptic behavior. Initially, Fe₃O₄ nanoparticles were synthesized using the co-precipitation method and PANI by oxidative polymerization and their nanocomposites of different compositions were prepared and fully characterized. The 10% Fe₃O₄-PANI-based RS device outperforms all others in terms of I–V switching performance. Furthermore, the optimized device (10% Fe₃O₄-PANI) has tuneable I–V characteristics. The device demonstrated excellent analog switching at ± 1.5 V and digital switching at ± 2.5 V. The memristive behavior of the Ag/10% Fe₃O₄-PANI/FTO device was confirmed by the pinched hysteresis loop in the I–V curves at different voltages, as well as the double-valued charged-flux characteristics. The device has good cycle-to-cycle reliability for switching voltages and switching currents, as demonstrated by the Weibull distribution and other statistical measures. Moreover, the device can retain memory states up to 6 × 10³ s and shows a switching stability of 2 × 10⁴ cycles. The device also showed linear potentiation and depression characteristics and mimicked excitatory post-synaptic current (EPSC) and paired-pulse facilitation (PPF) index properties similar to its biological counterpart. According to the charge transport model fitting results, the Ohmic and Child’s square laws dominated in both analog and digital switching processes, and RS occurs due to the filamentary process.

Graphical Abstract

导电聚合物被证明可用于制造电阻开关器件。这项研究报告了利用磁铁矿-聚苯胺（Fe3O4-PANI）纳米复合材料制造的电阻开关器件。该器件显示出良好的非易失性记忆特性，并能模拟神经突触行为。首先，利用共沉淀法合成了 Fe3O4 纳米粒子，利用氧化聚合法合成了 PANI，并制备了不同成分的纳米复合材料，对其进行了全面表征。基于 10% Fe3O4-PANI 的 RS 器件在 I-V 开关性能方面优于其他所有器件。此外，优化后的器件（10% Fe3O4-PANI）具有可调的 I-V 特性。该器件在 ± 1.5 V 和 ± 2.5 V 下分别实现了出色的模拟开关和数字开关性能。Ag/10% Fe3O4-PANI/FTO 器件的忆阻行为通过不同电压下 I-V 曲线中的针状滞后环以及双值带电通量特性得到了证实。该器件在开关电压和开关电流方面具有良好的周期可靠性，这一点已通过 Weibull 分布和其他统计指标得到证实。此外，该器件可保持记忆状态长达 6 × 103 秒，开关稳定性达 2 × 104 个周期。该器件还显示出线性电位增强和抑制特性，并模仿了兴奋性突触后电流（EPSC）和配对脉冲促进（PPF）指数特性，与其生物对应物相似。根据电荷传输模型拟合结果，欧姆定律和蔡尔德平方定律在模拟和数字开关过程中都占主导地位，而 RS 是由于丝状过程而发生的。

{"title":"Magnetite–Polyaniline Nanocomposite for Non-Volatile Memory and Neuromorphic Computing Applications","authors":"Ishika U. Shah, Snehal L. Patil, Sushilkumar A. Jadhav, Tukaram D. Dongale, Rajanish K. Kamat","doi":"10.1007/s13391-024-00495-y","DOIUrl":"10.1007/s13391-024-00495-y","url":null,"abstract":"<div><p>Conducting polymers are proving to be useful for construction of resistive switching devices. This work reports the fabrication of a resistive switching device using Magnetite-Polyaniline (Fe<sub>3</sub>O<sub>4</sub>-PANI) nanocomposite. The device showed good non-volatile memory properties and can mimic neuromorphic synaptic behavior. Initially, Fe<sub>3</sub>O<sub>4</sub> nanoparticles were synthesized using the co-precipitation method and PANI by oxidative polymerization and their nanocomposites of different compositions were prepared and fully characterized. The 10% Fe<sub>3</sub>O<sub>4</sub>-PANI-based RS device outperforms all others in terms of I–V switching performance. Furthermore, the optimized device (10% Fe<sub>3</sub>O<sub>4</sub>-PANI) has tuneable I–V characteristics. The device demonstrated excellent analog switching at ± 1.5 V and digital switching at ± 2.5 V. The memristive behavior of the Ag/10% Fe<sub>3</sub>O<sub>4</sub>-PANI/FTO device was confirmed by the pinched hysteresis loop in the I–V curves at different voltages, as well as the double-valued charged-flux characteristics. The device has good cycle-to-cycle reliability for switching voltages and switching currents, as demonstrated by the Weibull distribution and other statistical measures. Moreover, the device can retain memory states up to 6 × 10<sup>3</sup> s and shows a switching stability of 2 × 10<sup>4</sup> cycles. The device also showed linear potentiation and depression characteristics and mimicked excitatory post-synaptic current (EPSC) and paired-pulse facilitation (PPF) index properties similar to its biological counterpart. According to the charge transport model fitting results, the Ohmic and Child’s square laws dominated in both analog and digital switching processes, and RS occurs due to the filamentary process.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"381 - 392"},"PeriodicalIF":2.1,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140609086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optoelectronic Synapse Behaviors of HfS2 Grown via Molten Salt Flux Method 熔盐通量法生长的 HfS2 的光电突触行为

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-04-13 DOI: 10.1007/s13391-024-00494-z

Mi Ji Kwon, Nguyen Vu Binh, Su-yeon Cho, Soo Bin Shim, So Hyun Ryu, Yong Jae Jung, Woo Hyun Nam, Jung Young Cho, Jun Hong Park

Layered two-dimensional materials are promising candidates for next-generation semiconductor platforms owing to their atomically thin bodies, and it is crucial to develop a method for their large-scale synthesis for integrating these materials into the fabrication process. Here, we report the synthesis of a centimeter-scale HfS₂ ingot using the molten salt flux method (MSFM). The structure, crystallinity, and uniformity of the synthesized HfS₂ sample were verified using X-ray diffraction and Raman spectroscopy. The chemical properties were investigated using X-ray photoelectron spectroscopy. A HfS₂ synaptic field effect transistor (FET) was fabricated to confirm its electrical uniformity and semiconducting nature, with an average mobility of 10.6 cm² V^-1 s^-1. The synaptic plasticity of the HfS₂ synaptic FET was investigated by applying light pulses (405 nm) in different modulation configurations. Paired-pulse facilitation was achieved by applying a continuous light pulse with a negative gate bias voltage. The modulation of synaptic weight was demonstrated under different stimulation conditions, which emulates the human brain. Furthermore, the linearity of the HfS₂ synaptic device was optimized based on the frequency of the pulses to enhance learning accuracy. The approach reported here encourages the large-scaled production of transition metal dichalcogenides (TMDs) for use in artificial synaptic transistors.

Graphical Abstract

层状二维材料因其原子级薄体而有望成为下一代半导体平台的候选材料，因此开发一种大规模合成这些材料的方法对于将这些材料集成到制造工艺中至关重要。在此，我们报告了利用熔盐通量法（MSFM）合成厘米级 HfS2 铸锭的情况。我们使用 X 射线衍射和拉曼光谱验证了合成 HfS2 样品的结构、结晶度和均匀性。利用 X 射线光电子能谱对化学特性进行了研究。制作了一个 HfS2 突触场效应晶体管 (FET)，以确认其电气均匀性和半导体性质，其平均迁移率为 10.6 cm2 V-1 s-1。通过应用不同调制配置的光脉冲（405 nm），研究了 HfS2 突触场效应晶体管的突触可塑性。在负栅极偏置电压下施加连续光脉冲可实现成对脉冲促进。在模拟人脑的不同刺激条件下，演示了对突触重量的调制。此外，还根据脉冲频率优化了 HfS2 突触装置的线性度，以提高学习的准确性。本文报告的方法鼓励了用于人工突触晶体管的过渡金属二钙化物（TMDs）的大规模生产。

{"title":"Optoelectronic Synapse Behaviors of HfS2 Grown via Molten Salt Flux Method","authors":"Mi Ji Kwon, Nguyen Vu Binh, Su-yeon Cho, Soo Bin Shim, So Hyun Ryu, Yong Jae Jung, Woo Hyun Nam, Jung Young Cho, Jun Hong Park","doi":"10.1007/s13391-024-00494-z","DOIUrl":"10.1007/s13391-024-00494-z","url":null,"abstract":"<div><p>Layered two-dimensional materials are promising candidates for next-generation semiconductor platforms owing to their atomically thin bodies, and it is crucial to develop a method for their large-scale synthesis for integrating these materials into the fabrication process. Here, we report the synthesis of a centimeter-scale HfS<sub>2</sub> ingot using the molten salt flux method (MSFM). The structure, crystallinity, and uniformity of the synthesized HfS<sub>2</sub> sample were verified using X-ray diffraction and Raman spectroscopy. The chemical properties were investigated using X-ray photoelectron spectroscopy. A HfS<sub>2</sub> synaptic field effect transistor (FET) was fabricated to confirm its electrical uniformity and semiconducting nature, with an average mobility of 10.6 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. The synaptic plasticity of the HfS<sub>2</sub> synaptic FET was investigated by applying light pulses (405 nm) in different modulation configurations. Paired-pulse facilitation was achieved by applying a continuous light pulse with a negative gate bias voltage. The modulation of synaptic weight was demonstrated under different stimulation conditions, which emulates the human brain. Furthermore, the linearity of the HfS<sub>2</sub> synaptic device was optimized based on the frequency of the pulses to enhance learning accuracy. The approach reported here encourages the large-scaled production of transition metal dichalcogenides (TMDs) for use in artificial synaptic transistors.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"559 - 570"},"PeriodicalIF":2.1,"publicationDate":"2024-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140588054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Co-W and Co-Fe-W Diffusion Barriers on the Reliability of the Solder/Cu Interface during Reflow Conditions Co-W 和 Co-Fe-W 扩散屏障对回流条件下焊料/铜界面可靠性的影响

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-04-13 DOI: 10.1007/s13391-024-00491-2

Yuexiao Liu, Chongyang Li, Peixin Chen, Jinyang Liu, Anmin Hu, Ming Li

Efficient diffusion barriers are necessary to prevent the formation of copper-tin intermetallic compounds (IMCs) in advanced packaging for Sn/Cu micro-bumps. This study investigated the interfacial properties of solder and Ni, Co-9W, Co-20W, Co-20Fe-10W, and Co-36Fe-17W barriers and determined the thickness of IMCs formed between Sn and these barriers after up to 15 reflows. Among the five barriers, Co-36Fe-17W proved to be the most effective in inhibiting the reaction of liquid Sn solder. At the Sn/Co-W interface, CoSn₃ IMC was formed, while at the Sn/Co-Fe-W interface, CoSn₃ IMC and FeSn₂ IMC were observed. The contact angles of these layers were measured and found to be 18°, 22°, 25°, 29°, and 27°, respectively. The results showed that an increase in W content in Co-W led to an increase in the contact angle, while the intrinsic wettability of Co-Fe-W decreased with an increase in Fe content. The shear strengths of the five joints were 27 MPa, 31 MPa, 25 MPa, 25 MPa, and 26 MPa, respectively, with different fracture modes observed. The Co-Fe-W-Sn layer was partially peeling from the diffusion barriers in SAC305/Co-20Fe-10W, and the fracture surfaces exhibited an irregular and rough state, which was attributed to the increasing Fe and W contents. These findings offer valuable insights for enhancing the reliability of electronic packages.

Graphical Abstract

在先进的锡/铜微凸块封装中，要防止形成铜锡金属间化合物 (IMC)，必须要有高效的扩散屏障。本研究调查了焊料与 Ni、Co-9W、Co-20W、Co-20Fe-10W 和 Co-36Fe-17W 隔离层的界面特性，并测定了锡与这些隔离层之间在多达 15 次回流后形成的 IMC 厚度。事实证明，在五种阻挡层中，Co-36Fe-17W 在抑制液态锡焊料反应方面最为有效。在 Sn/Co-W 界面形成了 CoSn3 IMC，而在 Sn/Co-Fe-W 界面则观察到了 CoSn3 IMC 和 FeSn2 IMC。测量发现，这些层的接触角分别为 18°、22°、25°、29° 和 27°。结果表明，Co-W 中 W 含量的增加会导致接触角的增加，而 Co-Fe-W 的固有润湿性会随着 Fe 含量的增加而降低。五个接头的剪切强度分别为 27 兆帕、31 兆帕、25 兆帕、25 兆帕和 26 兆帕，并观察到不同的断裂模式。在 SAC305/Co-20Fe-10W 中，Co-Fe-W-Sn 层与扩散屏障部分剥离，断裂表面呈现出不规则的粗糙状态，这归因于铁和 W 含量的增加。这些发现为提高电子封装的可靠性提供了有价值的见解。

{"title":"Effect of Co-W and Co-Fe-W Diffusion Barriers on the Reliability of the Solder/Cu Interface during Reflow Conditions","authors":"Yuexiao Liu, Chongyang Li, Peixin Chen, Jinyang Liu, Anmin Hu, Ming Li","doi":"10.1007/s13391-024-00491-2","DOIUrl":"10.1007/s13391-024-00491-2","url":null,"abstract":"<div><p>Efficient diffusion barriers are necessary to prevent the formation of copper-tin intermetallic compounds (IMCs) in advanced packaging for Sn/Cu micro-bumps. This study investigated the interfacial properties of solder and Ni, Co-9W, Co-20W, Co-20Fe-10W, and Co-36Fe-17W barriers and determined the thickness of IMCs formed between Sn and these barriers after up to 15 reflows. Among the five barriers, Co-36Fe-17W proved to be the most effective in inhibiting the reaction of liquid Sn solder. At the Sn/Co-W interface, CoSn<sub>3</sub> IMC was formed, while at the Sn/Co-Fe-W interface, CoSn<sub>3</sub> IMC and FeSn<sub>2</sub> IMC were observed. The contact angles of these layers were measured and found to be 18°, 22°, 25°, 29°, and 27°, respectively. The results showed that an increase in W content in Co-W led to an increase in the contact angle, while the intrinsic wettability of Co-Fe-W decreased with an increase in Fe content. The shear strengths of the five joints were 27 MPa, 31 MPa, 25 MPa, 25 MPa, and 26 MPa, respectively, with different fracture modes observed. The Co-Fe-W-Sn layer was partially peeling from the diffusion barriers in SAC305/Co-20Fe-10W, and the fracture surfaces exhibited an irregular and rough state, which was attributed to the increasing Fe and W contents. These findings offer valuable insights for enhancing the reliability of electronic packages.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"517 - 524"},"PeriodicalIF":2.1,"publicationDate":"2024-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140588270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-Healing of Kirkendall Voids and IMC Growth in the Interfacial Reaction of Novel Ni/Cu bi-layer Barrier and Solder 新型镍/铜双层阻焊层和焊料界面反应中 Kirkendall 空洞的自愈合和 IMC 生长

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-04-03 DOI: 10.1007/s13391-024-00492-1

Haokun Li, Chongyang Li, Peixin Chen, Rui Xi, Feifei Li, Huiqin Ling, Ming Li

Single Ni layer is often inserted as diffusion barrier between Cu pillar and Sn-based solder to avoid excessive growth of brittle intermetallic compounds (IMCs) and consequent Kirkendall voids (KVs) in microbumps. However, with shrinking size of microbumps, Ni layer cannot maintain the inhibition performance as its thickness is reduced as well. In this work, Ni/Cu bi-layer barrier was employed at Cu-Sn interface, which was expected to reduce diffusion by rapidly generated Cu-Sn IMC retarding the diffusion of Ni. IMC growth behavior and interfacial reaction during isothermal aging were investigated. The self-healing phenomenon of KVs was detected during aging at 150 °C . It’s attributed to the transformation from Cu₃Sn to Cu₆Sn₅. The novel barrier exhibited excellent inhibition property compared with single Ni layer with slower IMC growth rate and less Cu substrate diffusion. Moreover, during 170 °C aging test, the Ni/Cu bi-layer barrier showed no sign of depletion until 600 h, while the single Ni barrier was completely depleted after 144 h. Such excellent inhibition property is beneficial to the future application of ultra-thin barrier layer in microbumps.

Graphical Abstract

通常在铜柱和锡基焊料之间插入单层镍作为扩散屏障，以避免金属间脆性化合物（IMC）过度生长，从而避免微凸块中出现 Kirkendall 空洞（KV）。然而，随着微凸块尺寸的缩小，镍层的厚度也随之减少，因此无法保持抑制性能。在这项工作中，在铜锡界面上采用了镍/铜双层阻挡层，通过快速生成的铜锡 IMC 阻止镍的扩散，从而减少扩散。研究了等温老化过程中的 IMC 生长行为和界面反应。在 150 °C 的老化过程中，检测到了 KVs 的自愈现象。这是由于 Cu3Sn 向 Cu6Sn5 的转变。与单层镍相比，这种新型阻挡层具有优异的抑制性能，IMC 生长速度较慢，铜基底扩散较少。此外，在 170 °C 老化测试中，镍/铜双层阻挡层在 600 小时之前没有损耗迹象，而单镍阻挡层在 144 小时后完全损耗。这种优异的抑制性能有利于超薄阻挡层在微凸块中的未来应用。

{"title":"Self-Healing of Kirkendall Voids and IMC Growth in the Interfacial Reaction of Novel Ni/Cu bi-layer Barrier and Solder","authors":"Haokun Li, Chongyang Li, Peixin Chen, Rui Xi, Feifei Li, Huiqin Ling, Ming Li","doi":"10.1007/s13391-024-00492-1","DOIUrl":"10.1007/s13391-024-00492-1","url":null,"abstract":"<div><p>Single Ni layer is often inserted as diffusion barrier between Cu pillar and Sn-based solder to avoid excessive growth of brittle intermetallic compounds (IMCs) and consequent Kirkendall voids (KVs) in microbumps. However, with shrinking size of microbumps, Ni layer cannot maintain the inhibition performance as its thickness is reduced as well. In this work, Ni/Cu bi-layer barrier was employed at Cu-Sn interface, which was expected to reduce diffusion by rapidly generated Cu-Sn IMC retarding the diffusion of Ni. IMC growth behavior and interfacial reaction during isothermal aging were investigated. The self-healing phenomenon of KVs was detected during aging at 150 °C . It’s attributed to the transformation from Cu<sub>3</sub>Sn to Cu<sub>6</sub>Sn<sub>5</sub>. The novel barrier exhibited excellent inhibition property compared with single Ni layer with slower IMC growth rate and less Cu substrate diffusion. Moreover, during 170 °C aging test, the Ni/Cu bi-layer barrier showed no sign of depletion until 600 h, while the single Ni barrier was completely depleted after 144 h. Such excellent inhibition property is beneficial to the future application of ultra-thin barrier layer in microbumps.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"509 - 516"},"PeriodicalIF":2.1,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140588053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Optical, Electrical, and Nanomechanical Properties of F-Doped Sno2 Fabricated by Ultrasonic Spray Pyrolysis 超声喷雾热解法制造的掺 F Sno2 的结构、光学、电学和纳米力学性能

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-03-23 DOI: 10.1007/s13391-024-00489-w

Jaewon Kim, Gahui Kim, Young-Bae Park

Transparent conductive oxides (TCOs) are in high demand by optoelectronic devices such as light-emitting diodes, phototransistors, touchscreens, solar cells, and low-emissivity windows. Tin-doped indium oxide (ITO) material is the most predominant in the market and is utilised among the various TCO materials. However, the lack of raw materials and the high cost of indium materials have necessitated the exploration of cost-effective TCOs that can serve as viable alternatives without compromising the desired optical and electrical properties. Tin oxide (SnO₂) films emerge as a promising candidate, offering several benefits, including abundant material sources, inexpensiveness, and non-toxicity. It anticipates producing a higher visible transmittance, excellent electrical conductivity, and good mechanical properties compared to ITO. Moreover, SnO₂ can increase its electrical conductivity by introducing representative dopant elements such as Sb, and F. However, structural, optical, and mechanical properties can affect additional dopant elements. Herein, we have demonstrated fluorine-doped tin oxide (FTO) thin films as a function of F dopant concentration by ultrasonic spray pyrolysis. The FTO thin films achieved excellent properties for FTO coatings such as polycrystalline structure, electrical conductivity (ρ = 9.1 × 10^–5 Ω cm), transmittance in the visible region (average visible transmittance up to 85.0%, with peak values of 96.5%) with a wider band gap between 3.80 and 4.28 eV. The increasing elastic modulus and hardness are related to significant grain boundaries, reaching the highest values of 154.5 ± 18.6 and 12.3 ± 3.6 GPa, respectively. The measured interface adhesion between SnO₂/Si substrate is 9.32 J/m².

Graphical Abstract

发光二极管、光电晶体管、触摸屏、太阳能电池和低辐射窗等光电设备对透明导电氧化物（TCO）的需求量很大。在各种 TCO 材料中，掺锡氧化铟（ITO）材料是市场上最主要的材料。然而，由于原材料的缺乏和铟材料的高成本，人们不得不探索具有成本效益的 TCO 材料，以便在不影响所需的光学和电气性能的前提下，将其作为可行的替代品。氧化锡（SnO2）薄膜是一种很有前途的候选材料，它具有多种优点，包括材料来源丰富、不敏感和无毒。与 ITO 相比，它有望产生更高的可见光透射率、出色的导电性和良好的机械性能。此外，二氧化锡可以通过引入具有代表性的掺杂元素（如锑和氟）来提高其导电性。在此，我们通过超声波喷雾热解技术展示了氟掺杂氧化锡（FTO）薄膜与 F 掺杂浓度的函数关系。这些 FTO 薄膜具有 FTO 涂层的优异特性，如多晶结构、导电性（ρ = 9.1 × 10-5 Ω cm）、可见光区域的透射率（平均可见光透射率高达 85.0%，峰值为 96.5%）以及 3.80 至 4.28 eV 之间较宽的带隙。弹性模量和硬度的增加与明显的晶界有关，最高值分别为 154.5 ± 18.6 和 12.3 ± 3.6 GPa。测得的二氧化锡/硅衬底之间的界面粘附力为 9.32 J/m2。

{"title":"Structural, Optical, Electrical, and Nanomechanical Properties of F-Doped Sno2 Fabricated by Ultrasonic Spray Pyrolysis","authors":"Jaewon Kim, Gahui Kim, Young-Bae Park","doi":"10.1007/s13391-024-00489-w","DOIUrl":"10.1007/s13391-024-00489-w","url":null,"abstract":"<div><p>Transparent conductive oxides (TCOs) are in high demand by optoelectronic devices such as light-emitting diodes, phototransistors, touchscreens, solar cells, and low-emissivity windows. Tin-doped indium oxide (ITO) material is the most predominant in the market and is utilised among the various TCO materials. However, the lack of raw materials and the high cost of indium materials have necessitated the exploration of cost-effective TCOs that can serve as viable alternatives without compromising the desired optical and electrical properties. Tin oxide (SnO<sub>2</sub>) films emerge as a promising candidate, offering several benefits, including abundant material sources, inexpensiveness, and non-toxicity. It anticipates producing a higher visible transmittance, excellent electrical conductivity, and good mechanical properties compared to ITO. Moreover, SnO<sub>2</sub> can increase its electrical conductivity by introducing representative dopant elements such as Sb, and F. However, structural, optical, and mechanical properties can affect additional dopant elements. Herein, we have demonstrated fluorine-doped tin oxide (FTO) thin films as a function of F dopant concentration by ultrasonic spray pyrolysis. The FTO thin films achieved excellent properties for FTO coatings such as polycrystalline structure, electrical conductivity (<i>ρ</i> = 9.1 × 10<sup>–5</sup> Ω cm), transmittance in the visible region (average visible transmittance up to 85.0%, with peak values of 96.5%) with a wider band gap between 3.80 and 4.28 eV. The increasing elastic modulus and hardness are related to significant grain boundaries, reaching the highest values of 154.5 ± 18.6 and 12.3 ± 3.6 GPa, respectively. The measured interface adhesion between SnO<sub>2</sub>/Si substrate is 9.32 J/m<sup>2</sup>.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"402 - 413"},"PeriodicalIF":2.1,"publicationDate":"2024-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140201141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Copper Oxide with Alkali Potassium Dopant for Heterojunction Solar Cells Application 含碱钾掺杂剂的氧化铜在异质结太阳能电池中的应用

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-03-23 DOI: 10.1007/s13391-024-00490-3

Katarzyna Gawlińska-Nęcek, Zbigniew Starowicz, Marta Janusz-Skuza, Anna Jarzębska, Piotr Panek

This work aimed to produce a low resistive copper oxide nanolayer with potassium admixture by a simple spray coating technique. The different concentration of dopant (2–20 wt%) was tested. It was found that 14 wt% of potassium reduced the resistivity of copper oxide from 21 Ω cm for reference layer to 5 Ω cm for doped thin film. The phase composition as well as the optical, and electrical properties of manufactured oxides were studied. It was found that potassium admixture affects the phase composition of manufactured thin film which turns from CuO to Cu₂O. This is accompanied by a widening of the optical band gap energy of the oxide. The roughness of the layer also increased. The photovoltaic properties of produced copper oxides were tested in n–i–p heterojunction with n-type Cz-Si and as a final product the solar cells with open circuit voltage of 296 mV and short circuit current density of 0.78 mA/cm² was fabricated.

Graphical Abstract

摘要本研究旨在通过简单的喷涂技术制备一种掺有钾的低电阻纳米氧化铜层。测试了不同浓度的掺杂剂（2-20 wt%）。结果发现，14 wt% 的钾能将氧化铜的电阻率从参考层的 21 Ω cm 降低到掺杂薄膜的 5 Ω cm。对制造的氧化物的相组成、光学和电学特性进行了研究。研究发现，钾的掺入会影响人造薄膜的相组成，使其从 CuO 转变为 Cu2O。同时，氧化物的光带隙能也随之变宽。薄膜层的粗糙度也有所增加。在与 n 型 Cz-Si 的 ni-p 异质结中测试了所制得的铜氧化物的光伏特性，最终制成了开路电压为 296 mV、短路电流密度为 0.78 mA/cm2 的太阳能电池。图表摘要

{"title":"The Copper Oxide with Alkali Potassium Dopant for Heterojunction Solar Cells Application","authors":"Katarzyna Gawlińska-Nęcek, Zbigniew Starowicz, Marta Janusz-Skuza, Anna Jarzębska, Piotr Panek","doi":"10.1007/s13391-024-00490-3","DOIUrl":"10.1007/s13391-024-00490-3","url":null,"abstract":"<div><p>This work aimed to produce a low resistive copper oxide nanolayer with potassium admixture by a simple spray coating technique. The different concentration of dopant (2–20 wt%) was tested. It was found that 14 wt% of potassium reduced the resistivity of copper oxide from 21 Ω cm for reference layer to 5 Ω cm for doped thin film. The phase composition as well as the optical, and electrical properties of manufactured oxides were studied. It was found that potassium admixture affects the phase composition of manufactured thin film which turns from CuO to Cu<sub>2</sub>O. This is accompanied by a widening of the optical band gap energy of the oxide. The roughness of the layer also increased. The photovoltaic properties of produced copper oxides were tested in n–i–p heterojunction with n-type Cz-Si and as a final product the solar cells with open circuit voltage of 296 mV and short circuit current density of 0.78 mA/cm<sup>2</sup> was fabricated.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"548 - 556"},"PeriodicalIF":2.1,"publicationDate":"2024-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140205349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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