Pub Date : 2024-05-24DOI: 10.1007/s13391-024-00500-4
C. Sambathkumar, K. R. Nagavenkatesh, R. Thangavel, N. Nallamuthu, P. Devendran, K. Rajesh
{"title":"Investigation and Comparative Studies on Charge Storage Performance in Nanostructured RuO2, NiO and Co3O4 Nanoparticles for High Dense Energy Storage","authors":"C. Sambathkumar, K. R. Nagavenkatesh, R. Thangavel, N. Nallamuthu, P. Devendran, K. Rajesh","doi":"10.1007/s13391-024-00500-4","DOIUrl":"https://doi.org/10.1007/s13391-024-00500-4","url":null,"abstract":"","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141101975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-24DOI: 10.1007/s13391-024-00502-2
Joon Soo Rhie, H. Do, Soo Young Kim
{"title":"ZIF-Derived Cobalt Sulfides Embedded on Nitrogen-Doped Carbon Frameworks for Efficient Hydrogen Evolution Reaction","authors":"Joon Soo Rhie, H. Do, Soo Young Kim","doi":"10.1007/s13391-024-00502-2","DOIUrl":"https://doi.org/10.1007/s13391-024-00502-2","url":null,"abstract":"","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141102659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-13DOI: 10.1007/s13391-024-00498-9
Juan Pablo Morán-Lázaro, Maykel Courel-Piedrahita, Alex Guillén-Bonilla, Florentino López-Urías, Héctor Guillén-Bonilla, Víctor Manuel Soto-García, Aldo Palafox-Corona, David Alberto Hernández-Poot
In this paper, we studied the alcohol-sensing properties of CoMn2O4 nanoparticles for the first time. The CoMn2O4 nanoparticles were prepared via a simple microwave-assisted colloidal method using cobalt nitrate, manganese nitrate, dioctyl sulfosuccinate sodium salt, and ethylene glycol as a solvent. Various techniques were used to characterize the structural, morphological, and optical properties of CoMn2O4. The crystal structure of CoMn2O4 was found after calcination at a temperature of 400 °C. The Raman spectrum showed seven vibrational bands, while the optical absorption spectrum showed three bands, confirming the spinel CoMn2O4. Morphological analysis revealed that the porous microstructure of CoMn2O4 was composed of nanoparticles with a size distribution of 16 to 58 nm. Gas sensors were fabricated with the CoMn2O4 powders calcined at 400 °C using the brush-coating method, and experimental results showed that CoMn2O4 nanoparticles were more sensitive to n-butanol than isopropanol and ethanol at an operating temperature of 185 °C. The CoMn2O4 sensor showed a response of 6.6 at 50 ppm n-butanol with good stability, reproducibility, and repeatability. The present article provides a new sensing material that could be used as an n-butanol sensor with significant benefits for human health.
{"title":"A Novel Sensor for the Detection of n-Butanol Based on CoMn2O4 Nanoparticles","authors":"Juan Pablo Morán-Lázaro, Maykel Courel-Piedrahita, Alex Guillén-Bonilla, Florentino López-Urías, Héctor Guillén-Bonilla, Víctor Manuel Soto-García, Aldo Palafox-Corona, David Alberto Hernández-Poot","doi":"10.1007/s13391-024-00498-9","DOIUrl":"https://doi.org/10.1007/s13391-024-00498-9","url":null,"abstract":"<p>In this paper, we studied the alcohol-sensing properties of CoMn<sub>2</sub>O<sub>4</sub> nanoparticles for the first time. The CoMn<sub>2</sub>O<sub>4</sub> nanoparticles were prepared via a simple microwave-assisted colloidal method using cobalt nitrate, manganese nitrate, dioctyl sulfosuccinate sodium salt, and ethylene glycol as a solvent. Various techniques were used to characterize the structural, morphological, and optical properties of CoMn<sub>2</sub>O<sub>4</sub>. The crystal structure of CoMn<sub>2</sub>O<sub>4</sub> was found after calcination at a temperature of 400 °C. The Raman spectrum showed seven vibrational bands, while the optical absorption spectrum showed three bands, confirming the spinel CoMn<sub>2</sub>O<sub>4</sub>. Morphological analysis revealed that the porous microstructure of CoMn<sub>2</sub>O<sub>4</sub> was composed of nanoparticles with a size distribution of 16 to 58 nm. Gas sensors were fabricated with the CoMn<sub>2</sub>O<sub>4</sub> powders calcined at 400 °C using the brush-coating method, and experimental results showed that CoMn<sub>2</sub>O<sub>4</sub> nanoparticles were more sensitive to <i>n</i>-butanol than isopropanol and ethanol at an operating temperature of 185 °C. The CoMn<sub>2</sub>O<sub>4</sub> sensor showed a response of 6.6 at 50 ppm <i>n</i>-butanol with good stability, reproducibility, and repeatability. The present article provides a new sensing material that could be used as an <i>n</i>-butanol sensor with significant benefits for human health.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140938205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-08DOI: 10.1007/s13391-024-00496-x
Yating Zhang, Xiaobo Wang, Meng Chen, Pei He, Zhenghan Kong
Oxygen reduction reaction (ORR) is an important half-reaction in various energy devices such as fuel cells. Here, 2D dendritic Fe/N co-doped carbon-based nanosheet composites (L-Fe-CNT@NCS-900) were obtained by high-temperature calcination using ZIF-L generated in the aqueous phase as a precursor and Vitamin C as a modifier. It is found that the catalysts calcined at 900℃ possessed the large specific surface area and the pore size distribution graphs showed a narrow micropore size distribution centered at about 1.8 nm. Furthermore, the Fe-N-C species was detected, which further improved the ORR performance as an active center. Thus, the L-Fe-CNT@NCS-900 calcined at 900 °C achieved the best ORR performance with a half-wave potential (E1/2) of 0.85 V, and the hydrogen peroxide yield is only about 4% during the ORR process. Meanwhile, L-Fe-CNT@NCS-900 exhibited outstanding methanol resistance. This work proposes a new strategy for constructing an efficient electrocatalysts for oxygen reduction reaction.
{"title":"Two-Dimensional Leafy Fe/N-Doped Carbon Nanomaterials Derived from Vitamin C-Modified ZIF-L for Efficient Oxygen Reduction Reaction","authors":"Yating Zhang, Xiaobo Wang, Meng Chen, Pei He, Zhenghan Kong","doi":"10.1007/s13391-024-00496-x","DOIUrl":"https://doi.org/10.1007/s13391-024-00496-x","url":null,"abstract":"<p>Oxygen reduction reaction (ORR) is an important half-reaction in various energy devices such as fuel cells. Here, 2D dendritic Fe/N co-doped carbon-based nanosheet composites (L-Fe-CNT@NCS-900) were obtained by high-temperature calcination using ZIF-L generated in the aqueous phase as a precursor and Vitamin C as a modifier. It is found that the catalysts calcined at 900℃ possessed the large specific surface area and the pore size distribution graphs showed a narrow micropore size distribution centered at about 1.8 nm. Furthermore, the Fe-N-C species was detected, which further improved the ORR performance as an active center. Thus, the L-Fe-CNT@NCS-900 calcined at 900 °C achieved the best ORR performance with a half-wave potential (E<sub>1/2</sub>) of 0.85 V, and the hydrogen peroxide yield is only about 4% during the ORR process. Meanwhile, L-Fe-CNT@NCS-900 exhibited outstanding methanol resistance. This work proposes a new strategy for constructing an efficient electrocatalysts for oxygen reduction reaction.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140938206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-04DOI: 10.1007/s13391-024-00499-8
Wooyeon Kim, Bonkee Koo, Jaeyeon Kim, In Choi, Seongyeon Hwang, Min Jae Ko
Tl3PbI5 exhibits a bandgap energy suitable for absorbing visible and ultraviolet spectra along with a high absorption capability, rendering it a promising candidate for a broader range of solar energy applications. However, its applicability as a light absorber in solar cells is yet to be experimentally confirmed. In this study, we systemically investigate the synthesis process and the crystallographic and chemical properties of Tl3PbI5 nanocrystals. These results enable the optimization of Tl3PbI5 nanocrystals for use as a light absorber. In addition, a solid-state ligand exchange method employing methyl acetate (MeOAc) is introduced to construct a Tl3PbI5 absorption layer for photovoltaic applications. This method facilitates the preparation of multilayer thin films with precise thickness control. The optimally designed Tl3PbI5-based solar cell achieves a power conversion efficiency (PCE) of 0.20%. Furthermore, the device retains over 90% of its PCE after 2000 h at 25 °C and 60% relative humidity, indicating the potential of Tl3PbI5-based photovoltaics for reliable solar energy harvesting.
{"title":"Tl3PbI5 Nanocrystals for Ultraviolet Photovoltaics","authors":"Wooyeon Kim, Bonkee Koo, Jaeyeon Kim, In Choi, Seongyeon Hwang, Min Jae Ko","doi":"10.1007/s13391-024-00499-8","DOIUrl":"https://doi.org/10.1007/s13391-024-00499-8","url":null,"abstract":"<p>Tl<sub>3</sub>PbI<sub>5</sub> exhibits a bandgap energy suitable for absorbing visible and ultraviolet spectra along with a high absorption capability, rendering it a promising candidate for a broader range of solar energy applications. However, its applicability as a light absorber in solar cells is yet to be experimentally confirmed. In this study, we systemically investigate the synthesis process and the crystallographic and chemical properties of Tl<sub>3</sub>PbI<sub>5</sub> nanocrystals. These results enable the optimization of Tl<sub>3</sub>PbI<sub>5</sub> nanocrystals for use as a light absorber. In addition, a solid-state ligand exchange method employing methyl acetate (MeOAc) is introduced to construct a Tl<sub>3</sub>PbI<sub>5</sub> absorption layer for photovoltaic applications. This method facilitates the preparation of multilayer thin films with precise thickness control. The optimally designed Tl<sub>3</sub>PbI<sub>5</sub>-based solar cell achieves a power conversion efficiency (<i>PCE</i>) of 0.20%. Furthermore, the device retains over 90% of its <i>PCE</i> after 2000 h at 25 °C and 60% relative humidity, indicating the potential of Tl<sub>3</sub>PbI<sub>5</sub>-based photovoltaics for reliable solar energy harvesting.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140884163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-26DOI: 10.1007/s13391-024-00497-w
Bumjin Gil, Jinhyun Kim, Byungwoo Park
Quasi-2D perovskite materials possess great potential in improving the stability of perovskite solar cells due to their superior chemical and structural stableness compared to 3D counterparts. Here, commonly-used 3D formamidinum lead iodide (FAPbI3) perovskite is alloyed by addition of quaternary cation phenyltrimethylammonium (PTMA) up to 33% (n = 5), which forms quasi-2D perovskite phase that acts beneficial to charge transport and stability. Since the detailed structural analyses regarding this quaternary ammonium salt is still lacking, we attempt to provide how the presence of 2D perovskite affects the crystal structure based on x-ray diffraction techniques. It is shown that PTMA cations directs FAPbI3 to have textured orientation and reduced strains. This led to enhanced extraction of photogenerated carriers and reduced defects, making it promising material for solar cell applications. The champion device remains stable under 60 °C or 1 sun for 700 h, demonstrating its potential for optoelectronic devices requiring long-term stability.
Graphical Abstract
准二维透辉石材料具有优于三维透辉石材料的化学和结构稳定性，因此在提高透辉石太阳能电池的稳定性方面具有巨大潜力。在这里，通过添加33%（n = 5）的季阳离子苯基三甲基铵（PTMA），将常用的三维甲酰胺碘化铅（FAPbI3）包晶石合金化，从而形成有利于电荷传输和稳定性的准二维包晶石相。由于目前还缺乏对这种季铵盐的详细结构分析，我们试图根据 X 射线衍射技术来说明二维包晶的存在如何影响晶体结构。结果表明，PTMA 阳离子使 FAPbI3 具有纹理取向并降低了应变。这提高了光生载流子的萃取率，减少了缺陷，使其成为太阳能电池应用的理想材料。冠军器件在 60 °C 或 1 个太阳下可稳定工作 700 小时，这证明了它在需要长期稳定性的光电器件方面的潜力。
{"title":"Phenyltrimethylammonium as an Interlayer Spacer for Stable Formamidinium-Based Quasi-2D Perovskite Solar Cells","authors":"Bumjin Gil, Jinhyun Kim, Byungwoo Park","doi":"10.1007/s13391-024-00497-w","DOIUrl":"https://doi.org/10.1007/s13391-024-00497-w","url":null,"abstract":"<p>Quasi-2D perovskite materials possess great potential in improving the stability of perovskite solar cells due to their superior chemical and structural stableness compared to 3D counterparts. Here, commonly-used 3D formamidinum lead iodide (FAPbI<sub>3</sub>) perovskite is alloyed by addition of quaternary cation phenyltrimethylammonium (PTMA) up to 33% (<i>n</i> = 5), which forms quasi-2D perovskite phase that acts beneficial to charge transport and stability. Since the detailed structural analyses regarding this quaternary ammonium salt is still lacking, we attempt to provide how the presence of 2D perovskite affects the crystal structure based on x-ray diffraction techniques. It is shown that PTMA cations directs FAPbI<sub>3</sub> to have textured orientation and reduced strains. This led to enhanced extraction of photogenerated carriers and reduced defects, making it promising material for solar cell applications. The champion device remains stable under 60 °C or 1 sun for 700 h, demonstrating its potential for optoelectronic devices requiring long-term stability.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140799574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-16DOI: 10.1007/s13391-024-00495-y
Ishika U. Shah, Snehal L. Patil, Sushilkumar A. Jadhav, Tukaram D. Dongale, Rajanish K. Kamat
Conducting polymers are proving to be useful for construction of resistive switching devices. This work reports the fabrication of a resistive switching device using Magnetite-Polyaniline (Fe3O4-PANI) nanocomposite. The device showed good non-volatile memory properties and can mimic neuromorphic synaptic behavior. Initially, Fe3O4 nanoparticles were synthesized using the co-precipitation method and PANI by oxidative polymerization and their nanocomposites of different compositions were prepared and fully characterized. The 10% Fe3O4-PANI-based RS device outperforms all others in terms of I–V switching performance. Furthermore, the optimized device (10% Fe3O4-PANI) has tuneable I–V characteristics. The device demonstrated excellent analog switching at ± 1.5 V and digital switching at ± 2.5 V. The memristive behavior of the Ag/10% Fe3O4-PANI/FTO device was confirmed by the pinched hysteresis loop in the I–V curves at different voltages, as well as the double-valued charged-flux characteristics. The device has good cycle-to-cycle reliability for switching voltages and switching currents, as demonstrated by the Weibull distribution and other statistical measures. Moreover, the device can retain memory states up to 6 × 103 s and shows a switching stability of 2 × 104 cycles. The device also showed linear potentiation and depression characteristics and mimicked excitatory post-synaptic current (EPSC) and paired-pulse facilitation (PPF) index properties similar to its biological counterpart. According to the charge transport model fitting results, the Ohmic and Child’s square laws dominated in both analog and digital switching processes, and RS occurs due to the filamentary process.
{"title":"Magnetite–Polyaniline Nanocomposite for Non-Volatile Memory and Neuromorphic Computing Applications","authors":"Ishika U. Shah, Snehal L. Patil, Sushilkumar A. Jadhav, Tukaram D. Dongale, Rajanish K. Kamat","doi":"10.1007/s13391-024-00495-y","DOIUrl":"https://doi.org/10.1007/s13391-024-00495-y","url":null,"abstract":"<p>Conducting polymers are proving to be useful for construction of resistive switching devices. This work reports the fabrication of a resistive switching device using Magnetite-Polyaniline (Fe<sub>3</sub>O<sub>4</sub>-PANI) nanocomposite. The device showed good non-volatile memory properties and can mimic neuromorphic synaptic behavior. Initially, Fe<sub>3</sub>O<sub>4</sub> nanoparticles were synthesized using the co-precipitation method and PANI by oxidative polymerization and their nanocomposites of different compositions were prepared and fully characterized. The 10% Fe<sub>3</sub>O<sub>4</sub>-PANI-based RS device outperforms all others in terms of I–V switching performance. Furthermore, the optimized device (10% Fe<sub>3</sub>O<sub>4</sub>-PANI) has tuneable I–V characteristics. The device demonstrated excellent analog switching at ± 1.5 V and digital switching at ± 2.5 V. The memristive behavior of the Ag/10% Fe<sub>3</sub>O<sub>4</sub>-PANI/FTO device was confirmed by the pinched hysteresis loop in the I–V curves at different voltages, as well as the double-valued charged-flux characteristics. The device has good cycle-to-cycle reliability for switching voltages and switching currents, as demonstrated by the Weibull distribution and other statistical measures. Moreover, the device can retain memory states up to 6 × 10<sup>3</sup> s and shows a switching stability of 2 × 10<sup>4</sup> cycles. The device also showed linear potentiation and depression characteristics and mimicked excitatory post-synaptic current (EPSC) and paired-pulse facilitation (PPF) index properties similar to its biological counterpart. According to the charge transport model fitting results, the Ohmic and Child’s square laws dominated in both analog and digital switching processes, and RS occurs due to the filamentary process.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\u0000","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140609086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-13DOI: 10.1007/s13391-024-00491-2
Yuexiao Liu, Chongyang Li, Peixin Chen, Jinyang Liu, Anmin Hu, Ming Li
Efficient diffusion barriers are necessary to prevent the formation of copper-tin intermetallic compounds (IMCs) in advanced packaging for Sn/Cu micro-bumps. This study investigated the interfacial properties of solder and Ni, Co-9W, Co-20W, Co-20Fe-10W, and Co-36Fe-17W barriers and determined the thickness of IMCs formed between Sn and these barriers after up to 15 reflows. Among the five barriers, Co-36Fe-17W proved to be the most effective in inhibiting the reaction of liquid Sn solder. At the Sn/Co-W interface, CoSn3 IMC was formed, while at the Sn/Co-Fe-W interface, CoSn3 IMC and FeSn2 IMC were observed. The contact angles of these layers were measured and found to be 18°, 22°, 25°, 29°, and 27°, respectively. The results showed that an increase in W content in Co-W led to an increase in the contact angle, while the intrinsic wettability of Co-Fe-W decreased with an increase in Fe content. The shear strengths of the five joints were 27 MPa, 31 MPa, 25 MPa, 25 MPa, and 26 MPa, respectively, with different fracture modes observed. The Co-Fe-W-Sn layer was partially peeling from the diffusion barriers in SAC305/Co-20Fe-10W, and the fracture surfaces exhibited an irregular and rough state, which was attributed to the increasing Fe and W contents. These findings offer valuable insights for enhancing the reliability of electronic packages.
{"title":"Effect of Co-W and Co-Fe-W Diffusion Barriers on the Reliability of the Solder/Cu Interface during Reflow Conditions","authors":"Yuexiao Liu, Chongyang Li, Peixin Chen, Jinyang Liu, Anmin Hu, Ming Li","doi":"10.1007/s13391-024-00491-2","DOIUrl":"https://doi.org/10.1007/s13391-024-00491-2","url":null,"abstract":"<p>Efficient diffusion barriers are necessary to prevent the formation of copper-tin intermetallic compounds (IMCs) in advanced packaging for Sn/Cu micro-bumps. This study investigated the interfacial properties of solder and Ni, Co-9W, Co-20W, Co-20Fe-10W, and Co-36Fe-17W barriers and determined the thickness of IMCs formed between Sn and these barriers after up to 15 reflows. Among the five barriers, Co-36Fe-17W proved to be the most effective in inhibiting the reaction of liquid Sn solder. At the Sn/Co-W interface, CoSn<sub>3</sub> IMC was formed, while at the Sn/Co-Fe-W interface, CoSn<sub>3</sub> IMC and FeSn<sub>2</sub> IMC were observed. The contact angles of these layers were measured and found to be 18°, 22°, 25°, 29°, and 27°, respectively. The results showed that an increase in W content in Co-W led to an increase in the contact angle, while the intrinsic wettability of Co-Fe-W decreased with an increase in Fe content. The shear strengths of the five joints were 27 MPa, 31 MPa, 25 MPa, 25 MPa, and 26 MPa, respectively, with different fracture modes observed. The Co-Fe-W-Sn layer was partially peeling from the diffusion barriers in SAC305/Co-20Fe-10W, and the fracture surfaces exhibited an irregular and rough state, which was attributed to the increasing Fe and W contents. These findings offer valuable insights for enhancing the reliability of electronic packages.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140588270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-13DOI: 10.1007/s13391-024-00494-z
Mi Ji Kwon, Nguyen Vu Binh, Su-yeon Cho, Soo Bin Shim, So Hyun Ryu, Yong Jae Jung, Woo Hyun Nam, Jung Young Cho, Jun Hong Park
Layered two-dimensional materials are promising candidates for next-generation semiconductor platforms owing to their atomically thin bodies, and it is crucial to develop a method for their large-scale synthesis for integrating these materials into the fabrication process. Here, we report the synthesis of a centimeter-scale HfS2 ingot using the molten salt flux method (MSFM). The structure, crystallinity, and uniformity of the synthesized HfS2 sample were verified using X-ray diffraction and Raman spectroscopy. The chemical properties were investigated using X-ray photoelectron spectroscopy. A HfS2 synaptic field effect transistor (FET) was fabricated to confirm its electrical uniformity and semiconducting nature, with an average mobility of 10.6 cm2 V-1 s-1. The synaptic plasticity of the HfS2 synaptic FET was investigated by applying light pulses (405 nm) in different modulation configurations. Paired-pulse facilitation was achieved by applying a continuous light pulse with a negative gate bias voltage. The modulation of synaptic weight was demonstrated under different stimulation conditions, which emulates the human brain. Furthermore, the linearity of the HfS2 synaptic device was optimized based on the frequency of the pulses to enhance learning accuracy. The approach reported here encourages the large-scaled production of transition metal dichalcogenides (TMDs) for use in artificial synaptic transistors.
{"title":"Optoelectronic Synapse Behaviors of HfS2 Grown via Molten Salt Flux Method","authors":"Mi Ji Kwon, Nguyen Vu Binh, Su-yeon Cho, Soo Bin Shim, So Hyun Ryu, Yong Jae Jung, Woo Hyun Nam, Jung Young Cho, Jun Hong Park","doi":"10.1007/s13391-024-00494-z","DOIUrl":"https://doi.org/10.1007/s13391-024-00494-z","url":null,"abstract":"<p>Layered two-dimensional materials are promising candidates for next-generation semiconductor platforms owing to their atomically thin bodies, and it is crucial to develop a method for their large-scale synthesis for integrating these materials into the fabrication process. Here, we report the synthesis of a centimeter-scale HfS<sub>2</sub> ingot using the molten salt flux method (MSFM). The structure, crystallinity, and uniformity of the synthesized HfS<sub>2</sub> sample were verified using X-ray diffraction and Raman spectroscopy. The chemical properties were investigated using X-ray photoelectron spectroscopy. A HfS<sub>2</sub> synaptic field effect transistor (FET) was fabricated to confirm its electrical uniformity and semiconducting nature, with an average mobility of 10.6 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. The synaptic plasticity of the HfS<sub>2</sub> synaptic FET was investigated by applying light pulses (405 nm) in different modulation configurations. Paired-pulse facilitation was achieved by applying a continuous light pulse with a negative gate bias voltage. The modulation of synaptic weight was demonstrated under different stimulation conditions, which emulates the human brain. Furthermore, the linearity of the HfS<sub>2</sub> synaptic device was optimized based on the frequency of the pulses to enhance learning accuracy. The approach reported here encourages the large-scaled production of transition metal dichalcogenides (TMDs) for use in artificial synaptic transistors.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140588054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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