Electronic Materials Letters最新文献

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Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes 沉积后退火对射频溅射 Cu2O/4H-SiC 和 NiO/4H-SiC PiN 二极管电特性的影响

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-03-06 DOI: 10.1007/s13391-024-00484-1

Hyung-Jin Lee, Soo-Young Moon, Kung-Yen Lee, Sang-Mo Koo

This study investigated the impact of the post-deposition annealing (PDA) process on the material and electrical properties of copper oxide (Cu₂O) and nickel oxide (NiO) thin films deposited on a silicon carbide (SiC) substrate. Through radiofrequency (RF) sputtering, these films were subjected to PDA in a nitrogen (N₂) and oxygen (O₂) gas environment. Remarkably, the Cu₂O films resisted phase transition following the N₂ PDA process but exhibited a transition to cupric oxide (CuO) after undergoing the O₂ PDA process. The symmetry of Cu 2p in the as-deposited Cu₂O film was excellent; however, the phase-transformed CuO films exhibited an increase in binding energy and the emergence of satellite peaks. The Ni 2p exhibited various defects, such as nickel vacancies (V_Ni) and interstitial oxygen (O_i), in response to the different PDA atmospheres. The rectification ratios of the N₂-annealed Cu₂O and NiO devices were determined as 1.50 × 10⁷ and 4.01 × 10⁶, respectively, signifying a substantial enhancement by a factor of approximately 789 for the Cu₂O/SiC device and 124 for the NiO/SiC device relative to their non-annealed counterparts. The findings of this study indicate that meticulous control of deposition for potential p-type materials such as Cu₂O and NiO can significantly improve the performance in applications involving high-throughput and low-cost electronics.

Graphical Abstract

本研究探讨了沉积后退火（PDA）工艺对沉积在碳化硅（SiC）基底上的氧化铜（Cu2O）和氧化镍（NiO）薄膜的材料和电气性能的影响。通过射频（RF）溅射，这些薄膜在氮气（N2）和氧气（O2）环境中进行了 PDA 处理。值得注意的是，在氮气 PDA 过程中，Cu2O 薄膜抵制了相变，但在氧气 PDA 过程中，Cu2O 薄膜表现出向氧化铜（CuO）的转变。在沉积的 Cu2O 薄膜中，Cu 2p 的对称性非常好；然而，相变的 CuO 薄膜显示出结合能的增加和卫星峰的出现。在不同的 PDA 气氛下，镍 2p 表现出各种缺陷，如镍空位（VNi）和间隙氧（Oi）。经 N2-退火处理的 Cu2O 和 NiO 器件的整流比分别为 1.50 × 107 和 4.01 × 106，与未退火处理的器件相比，Cu2O/SiC 器件的整流比提高了约 789 倍，NiO/SiC 器件的整流比提高了约 124 倍。这项研究的结果表明，对 Cu2O 和 NiO 等潜在 p 型材料的沉积进行精细控制，可以显著提高涉及高通量和低成本电子器件应用的性能。

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引用次数: 0

Effects of Dielectric Curing Temperature on the Interfacial Reliability of Cu/Ti/PBO for FOWLP Applications 介质固化温度对用于 FOWLP 应用的 Cu/Ti/PBO 的界面可靠性的影响

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-02-19 DOI: 10.1007/s13391-024-00485-0

Gahui Kim, Kirak Son, Young-Cheon Kim, Young-Bae Park

In this study, the effect of curing temperatures of low-temperature curable polybenzoxazole (PBO) dielectrics on the interfacial adhesion energies between the Cu redistribution layer and PBO dielectric used in advanced fan-out packaging was systematically investigated using a four-point bending test. The results revealed that the interfacial adhesion energy increased when the PBO curing temperature increased from 175 to 200 °C, whereas it decreased when the curing temperature increased from 200 to 225 °C. The increase in the interfacial adhesion energy with an increase in the PBO curing temperature from 175 to 200 °C is attributed to the polymerization of PBO. However, the decrease in the interfacial adhesion energy as the curing temperature increases to 225 °C results from thermal stress.

摘要本研究采用四点弯曲试验系统地研究了低温固化聚苯并恶唑（PBO）电介质的固化温度对先进扇出包装中使用的铜再分布层和 PBO 电介质之间的界面粘附能的影响。结果表明，当 PBO 固化温度从 175 ℃ 升至 200 ℃ 时，界面粘附能增加，而当固化温度从 200 ℃ 升至 225 ℃ 时，界面粘附能降低。界面粘附能随着 PBO 固化温度从 175 ℃ 升至 200 ℃ 而增加的原因是 PBO 的聚合作用。然而，当固化温度升高到 225 ℃ 时，界面粘附能降低是由于热应力造成的。图表摘要

引用次数: 0

Ternary Organic Solar Cells—Simulation–Optimization Approach 三元有机太阳能电池--模拟-优化方法

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-02-14 DOI: 10.1007/s13391-023-00479-4

Gabriela Lewińska

Organic solar cells are a rapidly expanding subfield of photovoltaics. The publication presents simulation results for organic cells with a focus on optimizing cells and maximizing performance using OghmaNano software. The efficiencies obtained from the simulation of the ternary solar devices were received. The efficiency achieved from simulations for the mobility of charge carriers as well as the dependence of the performance on the effective density from free electron and hole states were simulated. The most favorable ratios of hole and electron mobility and charge carrier densities were determined in terms of device efficiency. The impact of loss processes on the cell efficiency was also investigated.

Graphical Abstract

有机太阳能电池是光伏技术中发展迅速的一个子领域。该出版物介绍了有机电池的模拟结果，重点是利用 OghmaNano 软件优化电池并最大限度地提高性能。通过模拟三元太阳能装置获得了效率。模拟了电荷载流子迁移率所实现的效率，以及性能与自由电子和空穴态有效密度的关系。根据设备效率确定了最有利的空穴和电子迁移率以及电荷载流子密度比率。此外，还研究了损耗过程对电池效率的影响。

引用次数: 0

Eucommia Ulmoides Barks-derived Anodes for Sodium ion Battery and Method to Improve Electrochemical Performances by Modifying Defects 杜仲树皮衍生的钠离子电池阳极以及通过改变缺陷提高电化学性能的方法

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-02-10 DOI: 10.1007/s13391-024-00486-z

Shuai Sun, Lei Wang

Hard carbon were prepared from Eucommia ulmoides barks by carbonization (1100 or 1300 °C) and then used as anode materials for sodium ion battery (SIB). Results showed that, although increased carbonization temperature had positive influence on the initial coulombic efficiency (ICE) of samples, the sample carbonized at higher temperature could not show higher specific capacities from 100 mA g^− 1 to 1 A g^− 1 (current density). This phenomenon could be attributed to few changes of specific surface area for samples carbonized at different temperature. Further studies showed that if the obtained hard carbon underwent high temperature treatment together with pitch powders (the hard carbon did not need to contact with pitch powders directly during the treating process), the specific surface area of samples decreased, while number of disordered bonds and interlayer distance of crystallites increased. The modification of structural defects made the samples show better electrochemical performances (ICE, specific capacity and cycling characteristic). Additionally, when the method (modifying defects) was used in Cupressus funebris (cypress wood) based anodes for SIB, the ICE and specific capacities at different current densities of samples could also be improved, which means the method may have good applicability for producing biomass-derived SIB anodes on a large scale.

Graphical Abstract

杜仲树皮经碳化（1100 或 1300 °C）制备出硬质碳，然后用作钠离子电池（SIB）的阳极材料。结果表明，虽然提高碳化温度对样品的初始库仑效率（ICE）有积极影响，但在较高温度下碳化的样品在 100 mA g- 1 到 1 A g- 1（电流密度）范围内并不能显示出更高的比容量。这一现象可能是由于在不同温度下碳化的样品的比表面积变化不大。进一步的研究表明，如果将获得的硬质碳与沥青粉一起进行高温处理（在处理过程中硬质碳不需要直接与沥青粉接触），样品的比表面积会减小，而无序键的数量和晶粒的层间距离会增加。结构缺陷的改变使样品具有更好的电化学性能（ICE、比容量和循环特性）。此外，将该方法（改性缺陷）用于基于柏木的 SIB 阳极时，样品在不同电流密度下的 ICE 和比容量也得到了改善，这意味着该方法在大规模生产生物质衍生 SIB 阳极方面具有良好的适用性。

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引用次数: 0

Forming-Free and Non-linear Resistive Switching in Bilayer (hbox {HfO}_{textrm{x}})/(hbox {TaO}_{textrm{x}}) Memory Devices by Interface-Induced Internal Resistance 通过界面诱导内阻实现双层 $$hbox {HfO}_{textrm{x}}$ / $$hbox {TaO}_{textrm{x}}$ 存储器件中的无成型和非线性电阻切换

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-02-06 DOI: 10.1007/s13391-023-00481-w

Mari Napari, Spyros Stathopoulos, Themis Prodromakis, Firman Simanjuntak

Resistive switching memory devices with tantalum oxide ((hbox {TaO}_{textrm{x}})) and hafnium oxide ((hbox {HfO}_{textrm{x}})) mono- and bilayers were fabricated using atomic layer deposition. The bilayer devices with Ti and TiN electrodes show non-linear switching characteristics, and can operate without requiring an initial electroforming step. The insertion of the (hbox {HfO}_{textrm{x}}) layer induces the switching behaviour on single layer (hbox {TaO}_{textrm{x}}) that shows Zener diode-like characteristics, with conductivity depending on the top electrode metal. The electronic conductivity mechanism study shows Schottky emission at low voltage regime followed by tunneling at higher applied bias, both indicating interface-dominated conduction. The switching mechanism study is supported by X-ray photoelectron spectroscopy characterization of the films that show a formation of (hbox {TaO}_{textrm{x}}hbox {N}_{textrm{y}}) and (hbox {TaN}_{textrm{x}}) species at the oxide-electrode interface. This interfacial layer serves as a high resistivity barrier layer enabling the homogeneous resistive switching behavior.

摘要利用原子层沉积法制造了具有氧化钽（(hbox {TaO}_{textrm{x}}/）和氧化铪（(hbox {HfO}_{textrm{x}}/）单层和双层的电阻式开关存储器件。带有 Ti 和 TiN 电极的双层器件显示出非线性开关特性，并且无需初始电铸步骤即可运行。插入（hbox {HfO}_{textrm{x}}）层会诱导单层（hbox {TaO}_{textrm{x}}）上的开关行为，从而显示出齐纳二极管般的特性，其电导率取决于顶层电极金属。电子传导机制研究表明，在低电压条件下会出现肖特基发射，随后在较高的外加偏压条件下会出现隧道现象，这两种现象都表明界面主导传导。薄膜的 X 射线光电子能谱表征为开关机制研究提供了支持，该表征显示在氧化物-电极界面上形成了 (hbox {TaO}_{textrm{x}}hbox {N}_{textrm{y}}) 和 (hbox {TaN}_{textrm{x}}) 物种。该界面层可作为高电阻率阻挡层，从而实现均匀的电阻开关行为。

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引用次数: 0

Enhanced Thickness Uniformity of MoS2 Thin Films on SiO2/Si Substrates via Substrate Pre-Treatment with Oxygen Plasma 通过氧等离子体预处理提高二氧化硅/硅基片上 MoS2 薄膜的厚度均匀性

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-02-05 DOI: 10.1007/s13391-024-00487-y

Irang Lim, Youjin Koo, Woong Choi

We report the enhanced thickness uniformity of chemical-vapor-deposited MoS₂ thin films on SiO₂ substrates through substrate pre-treatment with O₂ plasma. Contact angle measurements indicated that the SiO₂ surface became more hydrophilic with an increase in surface energy after O₂ plasma pre-treatment. Analysis through Raman spectra and transmission electron microscopy measurements revealed that the thickness uniformity of MoS₂ thin films improved over a centimeter scale after the O₂ plasma pre-treatment on SiO₂ substrates. Atomic force microscopy analysis further revealed that O₂ plasma pre-treatment on SiO₂ substrates improved the uniformity of surface roughness in the MoS₂ thin films. These results demonstrate that O₂ plasma pre-treatment on SiO₂ substrates is an effective method of enhancing the thickness uniformity of MoS₂ thin films, providing valuable insights for the advancement of large-scale synthesis of MoS₂ and related transition metal dichalcogenides.

摘要我们报告了通过在二氧化硅基底上进行 O2 等离子体预处理，化学气相沉积 MoS2 薄膜的厚度均匀性得到增强的情况。接触角测量结果表明，经过 O2 等离子体预处理后，随着表面能的增加，SiO2 表面变得更加亲水。拉曼光谱和透射电子显微镜测量分析表明，在二氧化硅基底上进行 O2 等离子体预处理后，MoS2 薄膜的厚度均匀性提高了一厘米以上。原子力显微镜分析进一步显示，在二氧化硅基底上进行 O2 等离子体预处理后，MoS2 薄膜表面粗糙度的均匀性得到改善。这些结果表明，在二氧化硅基底上进行 O2 等离子体预处理是提高 MoS2 薄膜厚度均匀性的有效方法，为推动 MoS2 及相关过渡金属二钙化物的大规模合成提供了宝贵的见解。图表摘要

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引用次数: 0

Improved Catalytic Properties of Fluorine-Doped La0.6Sr0.4Co0.2Fe0.8O3-δ for Air Electrode with High-Performance Metal-Air Batteries 用于高性能金属-空气电池空气电极的掺氟 La0.6Sr0.4Co0.2Fe0.8O3-δ 催化性能的改进

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-01-31 DOI: 10.1007/s13391-023-00483-8

Jiyoun Kim, Jeongah Lee, Sangwoo Kim, WooChul Jung

La_0.6Sr_0.4Co_0.2Fe_0.8O_3-δ (LSCF), a perovskite material, is widely recognized as an excellent catalyst for the oxygen evolution reaction (OER). An anion doping strategy was implemented to enhance the presence of highly oxidation-active O²⁻/O⁻ species crucial for the electrochemical reaction, effectively replacing oxygen. The introduction of 5 mol% fluorine to LSCF resulted in improved OER performance, comparable to that of commercial noble catalysts. Furthermore, we confirmed that fluorine-doped LSCF enhanced the oxygen reduction reaction (ORR) performance, establishing its effectiveness as a bifunctional catalyst. Moreover, when utilized as an air electrode in a homemade zinc-air battery cell, the electrochemical performance of the doped LSCF remained stable after repeated charge/discharge tests. These findings underscore the potential application of anion doping in electrochemical devices.

Graphical Abstract

La0.6Sr0.4Co0.2Fe0.8O3-δ（LSCF）是一种过氧化物材料，被公认为是氧进化反应（OER）的优良催化剂。我们采用了阴离子掺杂策略，以增强对电化学反应至关重要的高氧化活性 O2-/O- 物种的存在，从而有效地取代氧气。在 LSCF 中引入 5 摩尔% 的氟后，OER 性能得到改善，可与商用惰性催化剂媲美。此外，我们还证实掺氟的 LSCF 提高了氧还原反应（ORR）的性能，从而确立了其作为双功能催化剂的有效性。此外，在自制锌-空气电池电池中用作空气电极时，掺杂 LSCF 的电化学性能在反复充放电测试后保持稳定。这些发现强调了阴离子掺杂在电化学设备中的潜在应用。

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引用次数: 0

Large-Area Quantum Dot Light-Emitting Diodes Employing Sputtered Zn0.85Mg0.15O Electron Transport Material 采用溅射 Zn0.85Mg0.15O 电子传输材料的大面积量子点发光二极管

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-01-30 DOI: 10.1007/s13391-023-00482-9

Bomi Kim, Jiwan Kim

We report a large-area quantum dot light-emitting diode (QLED) with sputtered Zn_0.85Mg_0.15O (ZMO) as an electron transport layer (ETL). Uniform ZMO is applied as ETL of the inverted structured QLED and the adjustment of Ar/O₂ ratio on device characteristics is studied in detail. Compared to pristine ZMO, ZMOs with O₂ gas are found to be beneficial to the charge balance in the emitting layer of QLEDs mainly by their upshifted conduction band minimum, which in turn limits an electron injection. Additionally, it is found that oxygen vacancies in the ZMO, acting as the exciton quenching sites, are responsible for the device stability. QLEDs with 6:1 ZMO produce a maximum luminance of 136,257 cd/m² and external quantum efficiency of 5.15%, which are the best device performances to date among QLEDs with sputtered ETLs. These results indicate that the sputtered ZMO shows great promise for use as an inorganic ETL for future large-area QLEDs.

Graphical Abstract

我们报告了一种以溅射 Zn0.85Mg0.15O（ZMO）作为电子传输层（ETL）的大面积量子点发光二极管（QLED）。将均匀的 ZMO 用作倒置结构 QLED 的 ETL，并详细研究了 Ar/O2 比率对器件特性的影响。与原始 ZMO 相比，发现含有氧气的 ZMO 有利于 QLED 发光层中的电荷平衡，主要是因为它们的上移导带最小值反过来限制了电子注入。此外，研究还发现，ZMO 中的氧空位作为激子淬灭位点，对器件的稳定性起着重要作用。采用 6:1 ZMO 的 QLED 产生的最大亮度为 136257 cd/m2，外部量子效率为 5.15%，是迄今为止采用溅射 ETL 的 QLED 中器件性能最好的。这些结果表明，溅射 ZMO 很有希望用作未来大面积 QLED 的无机 ETL。

引用次数: 0

2D Layered (CH3NH3)3Sb2ClxI9−x Lead-Free Perovskite for Weak Light Detection 用于弱光探测的二维层状 (CH3NH3)3Sb2ClxI9-x 无铅过氧化物

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-01-25 DOI: 10.1007/s13391-023-00480-x

Amit Kumar Pathak, Sudip Mukherjee, Sudip K. Batabyal

Weak light detection is a current research topic and chlorine-containing lead-free perovskite materials are promising. In this research work, Cl-incorporated methylammonium Sb mixed halide perovskite (CH₃NH₃)₃ (Sb)₂(Cl)_X I_(9−X) derivatives were investigated for weak light detection. We have devised a solution-processable slow crystal growth (SCG) to fabricate 2D layered (CH₃NH₃)₃ (Sb)₂(Cl)_X I_(9−X) lead-free perovskite microcrystals. SCG facilitate only 1.51 atomic percent chlorine incorporation confirmed in FESEM-EDS analysis and band gap 1.98 eV determines the SCG grown lead-free perovskite molecular formula to be (CH₃NH₃)₃ (Sb)₂(Cl)_X I_(9−X). FTO/ (CH₃NH₃)₃ (Sb)₂(Cl)_X I_(9−X) PMCs/FTO self-powered photodetector detect 400 nm, 1µW cm⁻² weak optical signal. (CH₃NH₃)₃ (Sb)₂(Cl)_X I_(9−X) respond to weak optical signals in the 300–600 nm wavelength range. Also, (CH₃NH₃)₃ (Sb)₂(Cl)_X I_(9−X) exhibit a high reflectance (> 70%) for the wavelength above 600 nm with its inherent thermodynamic stability is a candidate for use as a reflective layer in tandem solar cells.

Graphical Abstract

摘要弱光探测是当前的一个研究课题，而含氯的无铅过氧化物材料很有前景。在这项研究工作中，研究了掺入氯的甲基铵锑混合卤化物包晶（CH3NH3）3 (Sb)2(Cl)X I(9-X)衍生物用于弱光探测。我们设计了一种溶液可处理慢速晶体生长（SCG）方法，用于制造二维层状 (CH3NH3)3 (Sb)2(Cl)X I(9-X)无铅包晶微晶。经 FESEM-EDS 分析确认，SCG 只促进了 1.51 原子%的氯掺入，而 1.98 eV 的带隙决定了 SCG 生长的无铅透辉石分子式为 (CH3NH3)3 (Sb)2(Cl)X I(9-X)。FTO/ (CH3NH3)3 (Sb)2(Cl)X I(9-X) PMCs/FTO 自供电光电探测器可检测到 400 纳米、1µW cm-2 的微弱光信号。(CH3NH3)3 (Sb)2(Cl)X I(9-X) 对 300-600 纳米波长范围内的微弱光信号做出响应。此外，(CH3NH3)3 (Sb)2(Cl)X I(9-X)在 600 纳米以上波长显示出较高的反射率（70%），其固有的热力学稳定性是串联太阳能电池中用作反射层的候选材料。图表摘要

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引用次数: 0

Synthesis by Electrolysis of Iron-Based Fluoride as Cathode Materials for Lithium Ion Batteries 通过电解合成作为锂离子电池阴极材料的铁基氟化物

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2024-01-10 DOI: 10.1007/s13391-023-00478-5

Zengzeng Zheng, Jin Shi, Xujie Xiao, Xu Li, Jingkang Chen, Chengfei Zhu

The hydrated iron fluoride (Fe₃F₈·2H₂O) with mixed valence cations is successfully synthesized through a rapid electrolytic synthesis route for the first time using low-concentration HF solution as fluorine source and cheap carbon steel as iron source. By controlling the value of current density, submicron structured hydrated iron fluoride with different grain sizes is obtained. The thermal behavior of Fe₃F₈·2H₂O under air atmosphere is studied. The product cooling to room temperature after heat treatment is FeF_2.2(OH)_0.8·0.33H₂O, which is determined by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), Fourier transform infrared spectrometer (FT-IR), and thermogravimetry/differential scanning calorimetry (TG/DSC). The evaluation of the electrochemical performance of FeF_2.2(OH)_0.8·0.33H₂O as a cathode for lithium batteries shows that it has an initial discharge capacity as high as 580 mAh g⁻¹ in a wide voltage range of 1.0–4.5 V at a current density of 20 mA g⁻¹, but the cycle performance is not very satisfactory, only 170 mAh g⁻¹ after 50 cycles.

Graphical abstract

以低浓度 HF 溶液为氟源，廉价碳钢为铁源，通过快速电解合成路线首次成功合成了具有混合价阳离子的水合氟化铁（Fe3F8-2H2O）。通过控制电流密度值，获得了不同晶粒尺寸的亚微米结构水合氟化铁。研究了 Fe3F8-2H2O 在空气环境下的热行为。通过 X 射线衍射 (XRD)、X 射线光电子能谱 (XPS)、傅立叶变换红外光谱仪 (FT-IR) 和热重/差示扫描量热仪 (TG/DSC) 测定了热处理后冷却至室温的产物 FeF2.2(OH)0.8-0.33H2O。对 FeF2.2(OH)0.8-0.33H2O作为锂电池正极的电化学性能评估表明，在 20 mA g-1 的电流密度下，它在 1.0-4.5 V 的宽电压范围内的初始放电容量高达 580 mAh g-1，但循环性能并不十分理想，循环 50 次后仅为 170 mAh g-1。

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