Electronic Materials Letters最新文献_第10页

Vertical Pattern of Interconnects to Bypass High Strain Near a Hard Die on a Flexible Substrate Under Mechanical Bending 机械弯曲下柔性基板上靠近硬模的互连线绕过高应变的垂直模式

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-06-19 DOI: 10.1007/s13391-023-00444-1

Jong-Sung Lee, Young-Joo Lee, Jaegeun Seol, Young-Chang Joo, Byoung-Joon Kim

The distinguishing feature of a flexible electronic device is that it maintains its function even when the shape changes repeatedly. As the degree of integration of flexible devices increases, revealing failure mechanisms and extending the lifetime of the flexible devices are getting more difficult. One of the potential damage zones is the interface of heterogeneous material components, where strain can be localized due to the mismatch of mechanical properties. In this study, we investigate the mechanically reliable interconnect design of the flexible printed circuit board (FPCB) system in which the packaging chip is integrated. When the FPCB was bent, folding occurred at the edge of the packaging chip due to the high bending rigidity compared with the plastic substrate and resulted in high strain concentration. By introducing interconnect architecture that bypassed the strain concentration area around the packaging chip, mechanical damage of the interconnects was successfully reduced. Through finite element simulation, the strain applied to the interconnect crossing the strain-concentrated region was predicted to be 2 times larger than that bypassing the strain-concentrated region, from 8.32 to 4.64%. In addition, the strain gap of these two interconnects could be increased as the Young’s modulus mismatch between the packaging chip and the substrate increased. This study is expected to improve the design guidelines to mechanically reliable interconnects in highly integrated flexible electronics.

Graphical Abstract

柔性电子器件的显著特点是，即使形状反复变化，仍能保持其功能。随着柔性器件集成度的提高，揭示失效机制和延长柔性器件的使用寿命变得越来越困难。其中一个潜在的损坏区域是异质材料元件的界面，由于机械性能的不匹配，应变可能会在这里局部发生。在本研究中，我们研究了集成封装芯片的柔性印刷电路板（FPCB）系统的机械可靠性互连设计。当 FPCB 被弯曲时，由于与塑料基板相比具有较高的弯曲刚度，封装芯片的边缘会发生折叠，从而导致高应变集中。通过引入绕过封装芯片周围应变集中区域的互连结构，成功减少了互连的机械损伤。通过有限元模拟，可以预测施加在穿过应变集中区域的互连上的应变比绕过应变集中区域的互连大 2 倍，从 8.32% 降至 4.64%。此外，随着封装芯片与基底之间杨氏模量失配的增加，这两个互连的应变间隙也会增大。这项研究有望改进高度集成柔性电子器件中机械可靠性互连的设计准则。图文摘要

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引用次数: 0

Pt, Ag and Au Nanoparticles on Hollow Carbon Spheres as Cathode ORR 铂、银、金纳米颗粒在空心碳球上作为阴极ORR

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-06-19 DOI: 10.1007/s13391-023-00443-2

Yuhan Jiang, Linlin Guan, Yangjing Jiao, Chunxin Yu, Fang Zhao, Xiaowei Zhou, Zhu Liu

Hollow carbon spheres (HCS) have been employed as supporting materials for Pt, Ag, and Au nanoparticles (NPs) in the oxygen reduction reaction (ORR). The NPs Pt, Ag, and Au have been hydrothermally coated on HCS uniformly. The diameter of the Pt, Ag and Au NPs ranges between 11 and 32 nm, with the loading of 4.58, 4.73, and 4.07 wt.%, respectively. It is found that Pt, Ag, and Au/HCS exhibit stable catalytic activity after 5000 CV scanning and follow a four-electron route in the ORR. Among them, Tafel plots show that Ag/HCS has the fastest kinetic rates and Pt/HCS has the largest effective active area from CV curve. Hence HCS provides a stable supportive material for Pt, Ag, Au nanoparticle catalysts in the ORR due to its nanopores structure and large surface area.

Graphical Abstract

空心碳球（HCS）被用作铂、银和金纳米粒子（NPs）在氧还原反应（ORR）中的支撑材料。铂、银和金纳米粒子通过水热法均匀地涂覆在空心碳球上。铂、银和金纳米粒子的直径在 11 至 32 纳米之间，负载量分别为 4.58、4.73 和 4.07 wt.%。研究发现，铂、银和金/HCS 在经过 5000 CV 扫描后表现出稳定的催化活性，并在 ORR 中遵循四电子路线。其中，塔菲尔图显示，从 CV 曲线来看，Ag/HCS 的动力学速率最快，Pt/HCS 的有效活性面积最大。因此，由于 HCS 具有纳米孔结构和较大的比表面积，它在 ORR 中为铂、银、金纳米粒子催化剂提供了一种稳定的支撑材料。

引用次数: 0

Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window 大阻窗ReRAM中Ta/TaxMnyOz/Pt结构的双极电阻开关特性

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-06-07 DOI: 10.1007/s13391-023-00440-5

Yunki Kim, Kyu-Jin Jo, Jin-Su Oh, Cheol-Woong Yang

In this study, a resistive random-access memory device based on a Ta/Ta_xMn_yO_z/Pt metal–insulator–metal structure was fabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance of more than 300 cycles and robust retention up to 10⁴ s at room temperature. Moreover, the device had a low forming voltage and a resistance window of ~ 10³. The conduction mechanism in each resistance state of the device was analyzed through current–voltage curve fitting. It was confirmed that the primary conduction mechanisms were ohmic and Poole–Frenkel conduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device through transmission electron microscopy, it was found that the Ta_xMn_yO_z layer was deposited in amorphous form. The composition and chemical bonding state of the Ta_xMn_yO_z layer were also analyzed using X-ray photoelectron spectroscopy. With these characteristics, the amorphous Ta_xMn_yO_z layer has strong potential for nonvolatile memory applications.

Graphical Abstract

本研究制作并检验了一种基于 Ta/TaxMnyOz/Pt 金属绝缘体-金属结构的电阻式随机存取存储器件。测试器件具有稳定的双极电阻开关特性，直流电耐久性超过 300 次，室温下的稳健保持时间长达 104 秒。此外，该器件的形成电压较低，电阻窗口为 ~ 103。通过电流-电压曲线拟合分析了该器件各电阻状态下的传导机制。结果证实，在低电阻和高电阻状态下，主要传导机制分别是欧姆传导和普尔-弗伦克尔传导。通过透射电子显微镜分析所制造器件的横截面，发现 TaxMnyOz 层是以非晶态形式沉积的。此外，还利用 X 射线光电子能谱分析了 TaxMnyOz 层的成分和化学键状态。凭借这些特性，非晶态 TaxMnyOz 层在非易失性存储器应用方面具有很大的潜力。

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引用次数: 0

Pyridine Vapor Annealing Induced Reversible Switching Emission and Enhanced Electroluminescent Performance of Poly(fluorene-co-dibenzothiophene-S,S-dioxide) 吡啶蒸气退火诱导可逆开关发射及增强聚芴-co-二苯并噻吩- s, s -二氧化硅的电致发光性能

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-06-05 DOI: 10.1007/s13391-023-00442-3

Junfei Liang, Tong Wu, Jun Chen

In this article, we report on blue-green exciplex emission through pyridine solvent vapor annealing blue-light polymer PFSO10, which is comprised the strong electron-withdrawing dibenzo-thiophene-S,S-dioxide with the molar ratio of 10%. The photoluminescent spectrum of PFSO10 film emerged a fresh low-energy emission peaked at 482 nm after pyridine solvent vapor annealing, which was stemmed from the exciplex charge-transfer state between the PFSO10 and pyridine. It is worth noting that the exciplex emission peaked at 482 nm from the pyridine solvent vapor annealing film was disappeared after thermal annealed at 120 °C and its photoluminescent spectrum was similar to that of the pristine PFSO10 film. This similar phenomenon of photoluminescent spectrum was also occurred to the electroluminescent spectra of the PFSO10 films. Furthermore, the device performance of PFSO10 was achieved significant improvement after pyridine solvent vapor annealing. With optimizing the pyridine vapor annealing process, the device based on PFSO10 as emissive layer received a maximum luminous efficiency of 6.74 cd A⁻¹ with the peak brightness of 22,364 cd m⁻², which was enlarged over 140% compared to that of 2.77 cd A⁻¹ for the pristine PFSO10. These results demonstrate that appropriate solvent vapor annealing can be a simple and effective strategy to realize the reversible switching emission and improve the device performance.

Graphical Abstract

本文报道了通过吡啶溶剂气相退火蓝光聚合物 PFSO10 发出蓝绿色赋形体的情况，PFSO10 由摩尔比为 10% 的强电子吸收二苯并噻吩-S,S-二氧化物组成。在吡啶溶剂气相退火后，PFSO10 薄膜的光致发光光谱在 482 nm 处出现了新的低能发射峰，这源于 PFSO10 与吡啶之间的电荷转移态。值得注意的是，吡啶溶剂气相退火薄膜在 120 ℃ 热退火后，在 482 nm 处出现的簇射峰值消失了，其光致发光光谱与原始 PFSO10 薄膜的光致发光光谱相似。PFSO10 薄膜的电致发光光谱也出现了类似的光致发光光谱现象。此外，经过吡啶溶剂气相退火处理后，PFSO10 的器件性能得到了显著改善。通过优化吡啶气相退火工艺，以 PFSO10 为发射层的器件获得了 6.74 cd A-1 的最大发光效率，峰值亮度为 22,364 cd m-2，与原始 PFSO10 的 2.77 cd A-1 相比，放大了 140% 以上。这些结果表明，适当的溶剂气相退火是实现可逆开关发射和提高器件性能的一种简单而有效的策略。

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引用次数: 0

Characteristics of Rhombohedral (3R) Structure of α-In2Se3 Nanosheets by Mechanical Exfoliation 机械剥离法制备α-In2Se3纳米片的菱形（3R）结构特征

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-06-05 DOI: 10.1007/s13391-023-00439-y

Dong Hyun Seo, Ju Won Kim, Jin-Hoo Seong, Hyo-Chang Lee, Sang-il Kim, TaeWan Kim

The mechanically exfoliated ultrathin 3R α-In₂Se₃ nanosheets were transferred onto a SiO₂/Si substrate. Using atomic force microscopy, it was confirmed that the transferred α-In₂Se₃ transferred had a thickness of 15–120 nm. The thickness-dependence of Raman peaks of ({E}^{2}), ({A}_{1}^{1}), ({E}^{4}), and ({A}_{1}^{2}) was observed from the Raman spectra. Moreover, the measured photoluminescence peak values in the range of 869–895 nm indicate a blue shift as the thickness decreases. The field-effect transistor based on α-In₂Se₃ exhibited an n-type semiconductor behavior. From the transfer curve at gate voltage of 10 V, the derived values of the mobility and ON/OFF ratio are 24.26 cm² V^− 1 s^− 1 and 1.84, respectively. In addition, it was confirmed that the 3R α-In₂Se₃ layers had a high photoresponsivity of up to approximately 34,500 A/W under illumination ((lambda) = 750 nm).

Graphical abstract

机械剥离的超薄 3R α-In2Se3 纳米片被转移到二氧化硅/硅衬底上。使用原子力显微镜证实，转移的 α-In2Se3 厚度为 15-120 nm。从拉曼光谱中观察到了({E}^{2})、({A}_{1}^{1})、({E}^{4})和({A}_{1}^{2})拉曼峰的厚度依赖性。此外，在 869-895 nm 范围内测得的光致发光峰值表明，随着厚度的减小，光致发光会发生蓝移。基于 α-In2Se3 的场效应晶体管表现出 n 型半导体特性。根据栅极电压为 10 V 时的转移曲线，得出的迁移率和导通/关断比值分别为 24.26 cm2 V- 1 s- 1 和 1.84。此外，研究还证实 3R α-In2Se3 层在光照（(lambda) = 750 nm）下具有高达约 34,500 A/W 的光致发光率。

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引用次数: 0

Enhanced Open-Circuit Voltage of Eco-Friendly Silver Bismuth Iodide Thin-Film Photovoltaics with PTB7 Polymer-Based Hole Transport Layer 利用PTB7聚合物基空穴传输层提高生态友好型碘化铋银薄膜光伏的开路电压

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-05-19 DOI: 10.1007/s13391-023-00437-0

Tae-Gyun Kwon, Taesu Kim, Younghoon Kim

Next-generation and solution-processed thin-film solar cells have been attracted considerable attention because of their low cost, light weight, flexibility, and aesthetics. However, most of solution-processed thin-film solar cells are now focused on the use of photovoltaic absorbers containing the toxic element of Pb. In this study, eco-friendly silver-bismuth-iodide (Ag-Bi-I) thin-film photovoltaic devices with high open-circuit voltages (V_OC) are developed by utilizing polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7) as the hole transport layer (HTL). The solution-processed AgBi₂I₇ semiconductor, which is an Ag-Bi-I ternary compound, exhibit features suitable for photovoltaic layers in thin-film solar cells, including a three-dimensional (3D) crystal structure, good surface morphology, and low optical bandgaps of 1.87 eV. Meanwhile, the solution-processed AgBi₂I₇ thin-film solar cell based on the PTB7 HTL exhibit a power conversion efficiency of 0.94% with an improved V_OC value of 0.71 V owing to the deeper highest occupied molecular orbital (HOMO) energy level compared to that of poly(3-hexylthiophene-2,5-diyl) (P3HT). In other words, the V_OC of the PTB7 HTL-based device is 20% higher than that of the P3HT HTL-based control device. Our results provide a new approach for increasing the V_OC of eco-friendly Ag-Bi-I thin-film photovoltaics and indicate that further HTL engineering is necessary to simultaneously improve the V_OC and performance of the devices.

Graphical Abstract

下一代溶液处理薄膜太阳能电池因其成本低、重量轻、灵活性强和美观而备受关注。然而，目前大多数溶液法薄膜太阳能电池都侧重于使用含有有毒元素铅的光伏吸收剂。在这项研究中，利用聚噻吩并[3,4-b]噻吩-共苯并二噻吩（PTB7）作为空穴传输层（HTL），开发出了具有高开路电压（VOC）的环保型银铋碘（Ag-Bi-I）薄膜光伏器件。溶液加工的 AgBi2I7 半导体是一种 Ag-Bi-I 三元化合物，具有适合薄膜太阳能电池光电层的特性，包括三维（3D）晶体结构、良好的表面形貌和 1.87 eV 的低光带隙。同时，与聚(3-己基噻吩-2,5-二基)（P3HT）相比，基于PTB7 HTL的溶液加工AgBi2I7薄膜太阳能电池具有更深的最高占据分子轨道（HOMO）能级，其功率转换效率达到0.94%，VOC值提高到0.71 V。换句话说，基于 PTB7 HTL 的器件的 VOC 比基于 P3HT HTL 的控制器件高 20%。我们的研究结果为提高环保型银-铋-I 薄膜光伏器件的挥发性有机化合物提供了一种新方法，并表明有必要进一步开展 HTL 工程，以同时提高器件的挥发性有机化合物和性能。

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引用次数: 0

Novel Sn-Doped WO3 Photocatalyst to Degrade the Organic Pollutants Prepared by Green Synthesis Approach 绿色合成法制备的新型掺锡WO_3光催化剂降解有机污染物

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-05-13 DOI: 10.1007/s13391-023-00436-1

N. R. Khalid, Samavia Ilyas, Faisal Ali, Tahir Iqbal, M. Rafique, Muhammad Imran, Mohammad A. Assiri

The organic pollutants are polluting the drinking water so, it is a field of great interest to clean this water by using some sophisticated materials. For this purpose, the nanostructured materials are playing vital role to attain sustainable and pure drinking water by degrading organic pollutants. The synthesis of such photocatalytic material without using harmful chemicals, is one of the important existing challenges. Thus, to tackle this challenge, we have prepared green synthesized Sn-doped WO₃ nanomaterials by varying the content of Sn from 2 to 6 wt% and assisting from moringa oleifera seeds’ extract. The crystal structure, morphology, optical and photoluminescence properties of as prepared samples were investigated through x-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet visible spectroscopy (UV-vis) and photoluminescence spectroscopy (PL) techniques. Among of as prepared samples, the 4Sn-WO₃ (4 wt% Sn doped WO₃) sample has exhibited the reduced optical band gap value i.e. 2.80 eV than 3.02 eV for pure WO₃ sample. This optimized sample has also shown the lowest e-h recombination rate. To test the photocatalytic performance, the methylene blue was used as a model dye. Out of all samples, 4Sn-WO₃ sample has shown 95% degradation activity against this water pollutant. These findings specify that the as mentioned novel photocatalytic nanomaterial will provide a significant advancement in the environmental field to degrade the organic pollutants.

Graphical Abstract

有机污染物正在污染饮用水，因此，使用一些先进的材料来清洁饮用水是一个非常有意义的领域。为此，纳米结构材料在通过降解有机污染物获得可持续的纯净饮用水方面发挥着重要作用。如何在不使用有害化学物质的情况下合成这种光催化材料，是目前面临的重要挑战之一。因此，为了应对这一挑战，我们通过改变 Sn 的含量，从 2 到 6 wt% 不等，并以 Moringa oleifera 种子提取物为辅助，制备了绿色合成的 Sn 掺杂 WO3 纳米材料。通过 X 射线衍射（XRD）、扫描电子显微镜（SEM）、紫外可见光谱（UV-vis）和光致发光光谱（PL）技术研究了制备样品的晶体结构、形貌、光学和光致发光性能。在制备的样品中，4Sn-WO3（掺杂 4 wt% 锡的 WO3）样品的光带隙值比纯 WO3 样品的 3.02 eV 降低了 2.80 eV。该优化样品还显示出最低的电子-氢重组率。为了测试光催化性能，使用亚甲基蓝作为模型染料。在所有样品中，4Sn-WO3 样品对这种水污染物的降解活性高达 95%。这些发现表明，上述新型光催化纳米材料将在环境领域降解有机污染物方面取得重大进展。

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引用次数: 0

Enhanced Hall Mobility and d0 Ferromagnetism in Li-Doped ZnO Thin Films Prepared by Aerosol-Assisted CVD 气溶胶辅助CVD制备li掺杂ZnO薄膜的增强霍尔迁移率和d^0铁磁性

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-05-12 DOI: 10.1007/s13391-023-00438-z

Muhammad Arief Mustajab, Pepen Arifin, Suprijadi Suprijadi, Toto Winata

Zinc oxide (ZnO) thin films with different concentrations of lithium, from 0 to 15 mol%, have been grown on Si(100) substrates by employing aerosol-assisted chemical vapor deposition (AACVD). The structural, electronic, and magnetic properties of the ZnO thin films were investigated as the effect of Li doping concentration. SEM images of surface morphology reveal that the undoped and low-concentration Li-doped ZnO thin films exhibit irregular ellipsoid grains. In comparison, the ZnO thin films with higher Li concentration consist of multi-aligned rod-like and hexagonal-shaped grains. XRD pattern analysis confirms that all grown ZnO thin films exhibit a single polycrystalline phase of hexagonal wurtzite crystal. The lattice reduction was observed in the Li-doped thin films indicating that the substitutional Li effectively occupied the Zn lattice site. The Hall effect measurement demonstrates that Li-doped ZnO films possess p-type conductivity. The resistivity of Li-doped ZnO thin films decreases with an increase in Li doping concentration while the hole carrier density increases. The Hall mobility tends to increase as more Li doping concentration is given, with the highest Hall mobility obtained from 15 mol% Li-doped film with a value of 85.88 cm²/V s. The VSM study demonstrates that all grown ZnO thin films exhibit an M-H hysteresis curve, indicating d⁰ ferromagnetism behavior at room temperature, with coercivity ranging from 202 to 373 Oe. The highest saturation magnetization was obtained from 10 mol% Li-doped films, with a value of 5.55 × 10^–2 emu/g.

Graphical Abstract

通过采用气溶胶辅助化学气相沉积（AACVD）技术，在硅（100）基底上生长出了不同锂浓度（0 至 15 摩尔%）的氧化锌（ZnO）薄膜。研究了锂掺杂浓度对氧化锌薄膜结构、电子和磁性能的影响。表面形貌的扫描电镜图像显示，未掺杂和低浓度锂掺杂的氧化锌薄膜呈现出不规则的椭圆形晶粒。相比之下，锂浓度较高的氧化锌薄膜由多排列的棒状和六角形晶粒组成。XRD 图谱分析证实，所有生长出来的氧化锌薄膜都呈现出六方菱形晶体的单一多晶相。在掺锂的薄膜中观察到晶格降低，这表明置换的锂有效地占据了锌晶格位点。霍尔效应测量表明，掺锂氧化锌薄膜具有 p 型导电性。掺锂氧化锌薄膜的电阻率随着掺锂浓度的增加而降低，同时空穴载流子密度增加。霍尔迁移率随着锂掺杂浓度的增加而增加，锂掺杂浓度为 15 mol% 的薄膜霍尔迁移率最高，达到 85.88 cm2/V s。VSM 研究表明，所有生长的氧化锌薄膜都呈现出 M-H 磁滞曲线，表明其在室温下具有 d0 铁磁性，矫顽力范围为 202 至 373 Oe。掺杂 10 摩尔%锂的薄膜的饱和磁化率最高，达到 5.55 × 10-2 emu/g。

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引用次数: 0

Effect of Electron Irradiation on Electronic Structure of Ni41Co6Mn43Sn10 Alloys 电子辐照对Ni_41Co_6Mn_43Sn_10合金电子结构的影响

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-05-08 DOI: 10.1007/s13391-023-00432-5

Sibo Sun, Jun Zhang, Zhiyong Gao, Wei Cai

Effect of electron irradiation on electronic structure of Ni₄₁Co₆Mn₄₃Sn₁₀ alloys were investigated by X-ray absorption fine structure, X-ray magnetic circular dichroism spectrometry and Mössbauer spectrometry. The local coordination environment of magnetic element significant changes after electron irradiation, the change in the peak intensity of the Co L₃ edge is opposite to the Ni/Mn element, indicating that there is an electronic exchange between them. The crystal field symmetry is broken, the hyperfine field H_in of the Ni₄₁Co₆Mn₄₃Sn₁₀ alloy increases from 8.80 to 9.06 T. Meanwhile, the spin magnetic moment of the Mn atom is significantly increased after electron irradiation.

Graphical Abstract

MCD, XAS spectra of Ni and Mn and Hyperfine field distribution of Ni₄₁Co₆Mn₄₃Sn₁₀ alloys before and after electron irradiation

通过X射线吸收精细结构、X射线磁性圆二色光谱和莫斯鲍尔光谱研究了电子辐照对Ni41Co6Mn43Sn10合金电子结构的影响。电子辐照后磁性元素的局部配位环境发生了显著变化，Co L3 边峰强度的变化与 Ni/Mn 元素相反，表明它们之间存在电子交换。同时，电子辐照后锰原子的自旋磁矩显著增加。图文摘要电子辐照前后Ni41Co6Mn43Sn10合金的MCD、XAS谱图和超细场分布

引用次数: 0

Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process 利用聚焦离子束工艺从氮化镓基柱状结构中形成和控制六方金字塔结构

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters

Pub Date : 2023-05-08 DOI: 10.1007/s13391-023-00435-2

Woon Jae Ruh, Hyeon Jin Choi, Jong Hoon Kim, Seung Woo Jeon, Young-Kyun Noh, Mino Yang, Young Heon Kim

The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the external quantum efficiency by enhancing the light-emitting efficiency. In this study, as-grown short hexagonal pillar structures on GaN-based semiconductors were transformed into a hexagonal pyramid shape during a focused ion-beam process. After forming the hexagonal pyramid shape, it was found that the size of the hexagonal pyramid can be adjusted by varying the sputtering time while preserving the pyramid shape. The transformation of the as-grown pillar structures to 3D hexagonal pyramids was demonstrated by analyzing the morphological evolution with the sputtering time by simulating the FIB process and calculating the effective ion bombardment area during sputtering.

在使用氮化镓基半导体的层状光电器件表面形成可控的三维结构，对于通过提高发光效率来改善外部量子效率非常重要。在本研究中，通过聚焦离子束工艺将氮化镓基半导体上生长的短六角形支柱结构转变为六角形金字塔形状。在形成六角金字塔形状后，研究发现六角金字塔的大小可以通过改变溅射时间来调整，同时保持金字塔的形状。通过模拟 FIB 过程和计算溅射过程中的有效离子轰击面积，分析形态随溅射时间的变化，证明了生长的柱状结构向三维六角形金字塔的转变。

引用次数: 0