Pub Date : 2024-02-06DOI: 10.1007/s13391-023-00481-w
Mari Napari, Spyros Stathopoulos, Themis Prodromakis, Firman Simanjuntak
Resistive switching memory devices with tantalum oxide ((hbox {TaO}_{textrm{x}})) and hafnium oxide ((hbox {HfO}_{textrm{x}})) mono- and bilayers were fabricated using atomic layer deposition. The bilayer devices with Ti and TiN electrodes show non-linear switching characteristics, and can operate without requiring an initial electroforming step. The insertion of the (hbox {HfO}_{textrm{x}}) layer induces the switching behaviour on single layer (hbox {TaO}_{textrm{x}}) that shows Zener diode-like characteristics, with conductivity depending on the top electrode metal. The electronic conductivity mechanism study shows Schottky emission at low voltage regime followed by tunneling at higher applied bias, both indicating interface-dominated conduction. The switching mechanism study is supported by X-ray photoelectron spectroscopy characterization of the films that show a formation of (hbox {TaO}_{textrm{x}}hbox {N}_{textrm{y}}) and (hbox {TaN}_{textrm{x}}) species at the oxide-electrode interface. This interfacial layer serves as a high resistivity barrier layer enabling the homogeneous resistive switching behavior.
摘要 利用原子层沉积法制造了具有氧化钽((hbox {TaO}_{textrm{x}}/)和氧化铪((hbox {HfO}_{textrm{x}}/)单层和双层的电阻式开关存储器件。带有 Ti 和 TiN 电极的双层器件显示出非线性开关特性,并且无需初始电铸步骤即可运行。插入(hbox {HfO}_{textrm{x}})层会诱导单层(hbox {TaO}_{textrm{x}})上的开关行为,从而显示出齐纳二极管般的特性,其电导率取决于顶层电极金属。电子传导机制研究表明,在低电压条件下会出现肖特基发射,随后在较高的外加偏压条件下会出现隧道现象,这两种现象都表明界面主导传导。薄膜的 X 射线光电子能谱表征为开关机制研究提供了支持,该表征显示在氧化物-电极界面上形成了 (hbox {TaO}_{textrm{x}}hbox {N}_{textrm{y}}) 和 (hbox {TaN}_{textrm{x}}) 物种。该界面层可作为高电阻率阻挡层,从而实现均匀的电阻开关行为。
{"title":"Forming-Free and Non-linear Resistive Switching in Bilayer (hbox {HfO}_{textrm{x}})/(hbox {TaO}_{textrm{x}}) Memory Devices by Interface-Induced Internal Resistance","authors":"Mari Napari, Spyros Stathopoulos, Themis Prodromakis, Firman Simanjuntak","doi":"10.1007/s13391-023-00481-w","DOIUrl":"10.1007/s13391-023-00481-w","url":null,"abstract":"<p>Resistive switching memory devices with tantalum oxide (<span>(hbox {TaO}_{textrm{x}})</span>) and hafnium oxide (<span>(hbox {HfO}_{textrm{x}})</span>) mono- and bilayers were fabricated using atomic layer deposition. The bilayer devices with Ti and TiN electrodes show non-linear switching characteristics, and can operate without requiring an initial electroforming step. The insertion of the <span>(hbox {HfO}_{textrm{x}})</span> layer induces the switching behaviour on single layer <span>(hbox {TaO}_{textrm{x}})</span> that shows Zener diode-like characteristics, with conductivity depending on the top electrode metal. The electronic conductivity mechanism study shows Schottky emission at low voltage regime followed by tunneling at higher applied bias, both indicating interface-dominated conduction. The switching mechanism study is supported by X-ray photoelectron spectroscopy characterization of the films that show a formation of <span>(hbox {TaO}_{textrm{x}}hbox {N}_{textrm{y}})</span> and <span>(hbox {TaN}_{textrm{x}})</span> species at the oxide-electrode interface. This interfacial layer serves as a high resistivity barrier layer enabling the homogeneous resistive switching behavior.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"363 - 371"},"PeriodicalIF":2.1,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-023-00481-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139764844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-05DOI: 10.1007/s13391-024-00487-y
Irang Lim, Youjin Koo, Woong Choi
We report the enhanced thickness uniformity of chemical-vapor-deposited MoS2 thin films on SiO2 substrates through substrate pre-treatment with O2 plasma. Contact angle measurements indicated that the SiO2 surface became more hydrophilic with an increase in surface energy after O2 plasma pre-treatment. Analysis through Raman spectra and transmission electron microscopy measurements revealed that the thickness uniformity of MoS2 thin films improved over a centimeter scale after the O2 plasma pre-treatment on SiO2 substrates. Atomic force microscopy analysis further revealed that O2 plasma pre-treatment on SiO2 substrates improved the uniformity of surface roughness in the MoS2 thin films. These results demonstrate that O2 plasma pre-treatment on SiO2 substrates is an effective method of enhancing the thickness uniformity of MoS2 thin films, providing valuable insights for the advancement of large-scale synthesis of MoS2 and related transition metal dichalcogenides.
{"title":"Enhanced Thickness Uniformity of MoS2 Thin Films on SiO2/Si Substrates via Substrate Pre-Treatment with Oxygen Plasma","authors":"Irang Lim, Youjin Koo, Woong Choi","doi":"10.1007/s13391-024-00487-y","DOIUrl":"10.1007/s13391-024-00487-y","url":null,"abstract":"<p>We report the enhanced thickness uniformity of chemical-vapor-deposited MoS<sub>2</sub> thin films on SiO<sub>2</sub> substrates through substrate pre-treatment with O<sub>2</sub> plasma. Contact angle measurements indicated that the SiO<sub>2</sub> surface became more hydrophilic with an increase in surface energy after O<sub>2</sub> plasma pre-treatment. Analysis through Raman spectra and transmission electron microscopy measurements revealed that the thickness uniformity of MoS<sub>2</sub> thin films improved over a centimeter scale after the O<sub>2</sub> plasma pre-treatment on SiO<sub>2</sub> substrates. Atomic force microscopy analysis further revealed that O<sub>2</sub> plasma pre-treatment on SiO<sub>2</sub> substrates improved the uniformity of surface roughness in the MoS<sub>2</sub> thin films. These results demonstrate that O<sub>2</sub> plasma pre-treatment on SiO<sub>2</sub> substrates is an effective method of enhancing the thickness uniformity of MoS<sub>2</sub> thin films, providing valuable insights for the advancement of large-scale synthesis of MoS<sub>2</sub> and related transition metal dichalcogenides.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"603 - 609"},"PeriodicalIF":2.1,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139690052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-31DOI: 10.1007/s13391-023-00483-8
Jiyoun Kim, Jeongah Lee, Sangwoo Kim, WooChul Jung
La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF), a perovskite material, is widely recognized as an excellent catalyst for the oxygen evolution reaction (OER). An anion doping strategy was implemented to enhance the presence of highly oxidation-active O2−/O− species crucial for the electrochemical reaction, effectively replacing oxygen. The introduction of 5 mol% fluorine to LSCF resulted in improved OER performance, comparable to that of commercial noble catalysts. Furthermore, we confirmed that fluorine-doped LSCF enhanced the oxygen reduction reaction (ORR) performance, establishing its effectiveness as a bifunctional catalyst. Moreover, when utilized as an air electrode in a homemade zinc-air battery cell, the electrochemical performance of the doped LSCF remained stable after repeated charge/discharge tests. These findings underscore the potential application of anion doping in electrochemical devices.