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2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems最新文献

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Test scheme for switched-capacitor circuits by digital analyses 开关电容电路的数字分析测试方案
Y. Wen
This paper proposes a test scheme for measuring the ratio of a pair of capacitors of switched-capacitor (SC) circuits under test (CUT). A specific test signal called step-ramp signal (SRS) is designed. It accurately corresponds to a reference counter. With multiple gains design, a preamplifier following the CUT makes the output of the CUT larger to ensure that the output of the preamplifier is larger than that of the sampled voltage of the SRS inputted to the CUT. The difference between the output of the preamplifier and sampled voltage of the SRS is matched to a set of reference counter output codes. The ratio extracting from the codes can be simply and accurately calculated with digital circuits. This method is suitable to be implemented with Built-In Self-Test (BIST) structure for features on low chip area overhead and short test time. The demonstration is done by Ispice simulation. The accuracy of all ramp pieces of the SRS are within 0.036% and the method gives high accuracy of ratio measurement.
本文提出了一种测量被测开关电容(SC)电路一对电容比值的测试方案。设计了一种特殊的测试信号,称为阶梯-斜坡信号(SRS)。它精确地对应于一个引用计数器。采用多增益设计,前置放大器在CUT后使CUT的输出更大,以确保前置放大器的输出大于输入到CUT的SRS的采样电压。前置放大器的输出和SRS的采样电压之间的差值与一组参考计数器输出代码相匹配。利用数字电路可以简单、准确地计算出从编码中提取的比率。该方法适用于内置自检(BIST)结构,具有芯片面积开销小、测试时间短的特点。该演示由Ispice仿真完成。该方法测量的各斜片精度均在0.036%以内,具有较高的测量精度。
{"title":"Test scheme for switched-capacitor circuits by digital analyses","authors":"Y. Wen","doi":"10.1109/DDECS.2009.5012113","DOIUrl":"https://doi.org/10.1109/DDECS.2009.5012113","url":null,"abstract":"This paper proposes a test scheme for measuring the ratio of a pair of capacitors of switched-capacitor (SC) circuits under test (CUT). A specific test signal called step-ramp signal (SRS) is designed. It accurately corresponds to a reference counter. With multiple gains design, a preamplifier following the CUT makes the output of the CUT larger to ensure that the output of the preamplifier is larger than that of the sampled voltage of the SRS inputted to the CUT. The difference between the output of the preamplifier and sampled voltage of the SRS is matched to a set of reference counter output codes. The ratio extracting from the codes can be simply and accurately calculated with digital circuits. This method is suitable to be implemented with Built-In Self-Test (BIST) structure for features on low chip area overhead and short test time. The demonstration is done by Ispice simulation. The accuracy of all ramp pieces of the SRS are within 0.036% and the method gives high accuracy of ratio measurement.","PeriodicalId":6325,"journal":{"name":"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","volume":"54 1","pages":"132-135"},"PeriodicalIF":0.0,"publicationDate":"2009-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86880770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An analysis of the timing behavior of CMOS digital blocks under Simultaneous Switching Noise conditions 同时开关噪声条件下CMOS数字块的时序特性分析
F. Azaïs, Y. Bertrand, M. Renovell
This paper analyzes the impact of Simultaneous Switching Noise (SSN) on the timing behavior of CMOS digital blocks. The concept of Instantaneous Transfer Function is introduced to interpret noisy signals and perform timing measurements on such signals. It is shown that the average swing during switching is the key parameter to predict the noise impact on the delay of a logic path, whereas the peak of noise is not relevant. The influence of structural parameters such as the block topology is evaluated, and the unpredictable aspect of SSN impact on path delay is highlighted.
分析了同步开关噪声(SSN)对CMOS数字模块时序特性的影响。引入瞬时传递函数的概念来解释噪声信号并对这些信号进行定时测量。结果表明,开关过程中的平均摆幅是预测噪声对逻辑路径延迟影响的关键参数,而噪声峰值与此无关。评估了块拓扑等结构参数的影响,并强调了SSN对路径延迟影响的不可预测方面。
{"title":"An analysis of the timing behavior of CMOS digital blocks under Simultaneous Switching Noise conditions","authors":"F. Azaïs, Y. Bertrand, M. Renovell","doi":"10.1109/DDECS.2009.5012119","DOIUrl":"https://doi.org/10.1109/DDECS.2009.5012119","url":null,"abstract":"This paper analyzes the impact of Simultaneous Switching Noise (SSN) on the timing behavior of CMOS digital blocks. The concept of Instantaneous Transfer Function is introduced to interpret noisy signals and perform timing measurements on such signals. It is shown that the average swing during switching is the key parameter to predict the noise impact on the delay of a logic path, whereas the peak of noise is not relevant. The influence of structural parameters such as the block topology is evaluated, and the unpredictable aspect of SSN impact on path delay is highlighted.","PeriodicalId":6325,"journal":{"name":"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","volume":"13 1","pages":"158-163"},"PeriodicalIF":0.0,"publicationDate":"2009-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88879308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical design oriented DRAM Neighborhood Pattern Sensitive Fault testing 面向DRAM邻域模式敏感故障测试的物理设计
Yiorgos Sfikas, Y. Tsiatouhas
Although the Neighborhood Pattern Sensitive Fault (NPSF) model is recognized as a high quality fault model for memory arrays, the excessive test application time cost associated with it, compared to other fault models, restricts its wide adoption for memory testing. In this work we exploit the physical design (layout) of folded DRAM memory arrays to introduce a new neighborhood type for NPSF testing and a pertinent test and locate algorithm. This algorithm reduces drastically the test application time (about 58% with respect to the well known Type-1 neighborhood) aiming to make the NPSF model also a cost attractive choice. In addition, we introduce the Neighborhood Word-Line Sensitive Fault model and the corresponding test algorithm to cover those faults along with NPSFs, achieving test application time cost reduction from 33% to 41%, depending on various assumptions, with respect to the Type-1 neighborhood.
虽然邻域模式敏感故障(NPSF)模型被认为是一种高质量的内存阵列故障模型,但与其他故障模型相比,它带来的测试应用时间成本过高,限制了其在内存测试中的广泛应用。在这项工作中,我们利用折叠DRAM存储阵列的物理设计(布局)来引入一种用于NPSF测试的新邻域类型和相关的测试和定位算法。该算法极大地减少了测试应用时间(相对于众所周知的Type-1邻域,大约减少了58%),旨在使NPSF模型成为一个具有成本吸引力的选择。此外,我们引入了邻域词线敏感故障模型和相应的测试算法来覆盖这些故障以及npsf,根据不同的假设,相对于Type-1邻域,测试应用时间成本从33%降低到41%。
{"title":"Physical design oriented DRAM Neighborhood Pattern Sensitive Fault testing","authors":"Yiorgos Sfikas, Y. Tsiatouhas","doi":"10.1109/DDECS.2009.5012108","DOIUrl":"https://doi.org/10.1109/DDECS.2009.5012108","url":null,"abstract":"Although the Neighborhood Pattern Sensitive Fault (NPSF) model is recognized as a high quality fault model for memory arrays, the excessive test application time cost associated with it, compared to other fault models, restricts its wide adoption for memory testing. In this work we exploit the physical design (layout) of folded DRAM memory arrays to introduce a new neighborhood type for NPSF testing and a pertinent test and locate algorithm. This algorithm reduces drastically the test application time (about 58% with respect to the well known Type-1 neighborhood) aiming to make the NPSF model also a cost attractive choice. In addition, we introduce the Neighborhood Word-Line Sensitive Fault model and the corresponding test algorithm to cover those faults along with NPSFs, achieving test application time cost reduction from 33% to 41%, depending on various assumptions, with respect to the Type-1 neighborhood.","PeriodicalId":6325,"journal":{"name":"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","volume":"1 1","pages":"108-113"},"PeriodicalIF":0.0,"publicationDate":"2009-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82877964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Using 3-valued memory representation for state space reduction in embedded assembly code model checking 在嵌入式汇编代码模型检查中使用3值内存表示进行状态空间缩减
T. Reinbacher, M. Horauer, Bastian Schlich
Model checking of assembly code is a promising approach to satisfy the demand for verification in nowadays ultra-high reliable embedded systems software. Frequent interaction with its environment, e.g., by sending or reading data over the microcontrollers I/O lines, lies in the nature of embedded systems. Thus, making the long-standing problem of explicit-model checking even worse, namely the state-explosion problem. This paper presents a concept to tackle these difficulties by using a 3-valued logic in the state representation and showing its benefits in terms of state-space savings whenever logic operations are executed by the target microcontroller. To highlight the effectiveness of this approach, termed delayed nondeterminism with look ahead, an embedded program exemplifying typical microcontroller source code is analyzed and the resulting state space sizes are discussed. The introduced abstraction technique is implemented in the MCS-51 simulator component for the [mc]square model checker which is developed by the RWTH Aachen University.
汇编代码的模型检验是满足当今超高可靠性嵌入式系统软件验证需求的一种很有前途的方法。与环境的频繁交互,例如,通过微控制器的I/O线发送或读取数据,是嵌入式系统的本质。从而使长期存在的显式模型检查问题,即状态爆炸问题变得更加严重。本文提出了一个概念,通过在状态表示中使用3值逻辑来解决这些困难,并在目标微控制器执行逻辑操作时显示其在状态空间节省方面的好处。为了强调这种方法的有效性,称为具有前瞻性的延迟不确定性,本文分析了典型微控制器源代码的嵌入式程序,并讨论了结果状态空间大小。所介绍的抽象技术在亚琛工业大学开发的[mc]方形模型检查器的MCS-51模拟器组件中实现。
{"title":"Using 3-valued memory representation for state space reduction in embedded assembly code model checking","authors":"T. Reinbacher, M. Horauer, Bastian Schlich","doi":"10.1109/DDECS.2009.5012109","DOIUrl":"https://doi.org/10.1109/DDECS.2009.5012109","url":null,"abstract":"Model checking of assembly code is a promising approach to satisfy the demand for verification in nowadays ultra-high reliable embedded systems software. Frequent interaction with its environment, e.g., by sending or reading data over the microcontrollers I/O lines, lies in the nature of embedded systems. Thus, making the long-standing problem of explicit-model checking even worse, namely the state-explosion problem. This paper presents a concept to tackle these difficulties by using a 3-valued logic in the state representation and showing its benefits in terms of state-space savings whenever logic operations are executed by the target microcontroller. To highlight the effectiveness of this approach, termed delayed nondeterminism with look ahead, an embedded program exemplifying typical microcontroller source code is analyzed and the resulting state space sizes are discussed. The introduced abstraction technique is implemented in the MCS-51 simulator component for the [mc]square model checker which is developed by the RWTH Aachen University.","PeriodicalId":6325,"journal":{"name":"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","volume":"42 1","pages":"114-119"},"PeriodicalIF":0.0,"publicationDate":"2009-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87466307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
期刊
2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems
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