Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700977
C. Su, Sheng-Chi Chang
To understand the propagation of optical waves in semiconductor layered media has become important in modern photonics technology, especially for transparent materials because world's industrial investment in optoelectronics is dramatically increased in the recent five years. Layered media include isotropic and anisotropic materials in which transmission and reflection of optical waves are confined by detail structural properties [1]. Thus, the optical tools related structure-sensitive magnetic properties, i.e. magneto-photonics, become useful for interface or surface analysis in the ranges of transparency of the contacting media. Magnetic anisotropy investigation is essential for the growth of magnetic thin films. Recently, hot topic in perpendicular magnetic recording is still in developing because application in high-density recording is indispensable in our future lives.
{"title":"Oblique incidence of light propagation in magnetic anisotropic media and digital photonic device applications","authors":"C. Su, Sheng-Chi Chang","doi":"10.1109/ESCINANO.2010.5700977","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700977","url":null,"abstract":"To understand the propagation of optical waves in semiconductor layered media has become important in modern photonics technology, especially for transparent materials because world's industrial investment in optoelectronics is dramatically increased in the recent five years. Layered media include isotropic and anisotropic materials in which transmission and reflection of optical waves are confined by detail structural properties [1]. Thus, the optical tools related structure-sensitive magnetic properties, i.e. magneto-photonics, become useful for interface or surface analysis in the ranges of transparency of the contacting media. Magnetic anisotropy investigation is essential for the growth of magnetic thin films. Recently, hot topic in perpendicular magnetic recording is still in developing because application in high-density recording is indispensable in our future lives.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80388115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701034
A. F. Abd Rahim, M. Hashim, N. K. Ali
Germanium is an interesting group IV semiconductor for its high carrier mobility and is considered for the application in high speed electronics. It also displays unique optical properties at the nanoscale and holds potential for the application in photonics [1]. Many techniques have been employed to grow Ge nanostructures such as self-assembled growth of Ge nanometer islands in highly strained system using sophisticated Molecular Beam Epitaxy (MBE)[2] and Low Pressure Chemical Vapor Deposition(LPCVD) techniques [3]. Huang et al [4] used porous silicon (PS) as the substrate for Ge quantum dots formation. The Ge was deposited by using UHV-CVD technique. They successfully showed potential PS as a patterned substrate for the Ge dot formation which showed emission at the infrared region.
{"title":"Thermally treated Ge crystallites embedded inside PS with Si capping layer for potential photonics application","authors":"A. F. Abd Rahim, M. Hashim, N. K. Ali","doi":"10.1109/ESCINANO.2010.5701034","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701034","url":null,"abstract":"Germanium is an interesting group IV semiconductor for its high carrier mobility and is considered for the application in high speed electronics. It also displays unique optical properties at the nanoscale and holds potential for the application in photonics [1]. Many techniques have been employed to grow Ge nanostructures such as self-assembled growth of Ge nanometer islands in highly strained system using sophisticated Molecular Beam Epitaxy (MBE)[2] and Low Pressure Chemical Vapor Deposition(LPCVD) techniques [3]. Huang et al [4] used porous silicon (PS) as the substrate for Ge quantum dots formation. The Ge was deposited by using UHV-CVD technique. They successfully showed potential PS as a patterned substrate for the Ge dot formation which showed emission at the infrared region.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90587699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700954
B. Kim, S. Uno, K. Nakazato
The radio frequency identification (RFID) technology has become very popular in many fields; anti-theft devices, smart card and library management. Recently, RFID biosensor chips have been reported, which integrates RFID and biosensor for inexpensive, small and subaqueous sensing system [1]. However, RFID system typically uses external off-chip antennas, so that additional fabrication time and cost are required for the post process. This paper investigates the RFID biosensor with on-chip spiral inductor as the tag antenna. First of all, we assume the operating frequency 13.56 MHz that is suitable to subaqueous measuring system. Secondly, we simplify the process and reduce cost by integrating sensor chip and on-chip spiral inductor tag antenna that is fabricated with metal interconnect layer of standard complementary metal oxide semiconductor (CMOS) process. Finally, we propose the RFID biosensor circuitary (new modulation circuit and signal processing circuit), and the operation is confirmed by measurement. With such advances, low cost, low noise and simple measuring system can be expected.
{"title":"13.56 MHz-RFID biosensor with on-chip spiral inductor","authors":"B. Kim, S. Uno, K. Nakazato","doi":"10.1109/ESCINANO.2010.5700954","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700954","url":null,"abstract":"The radio frequency identification (RFID) technology has become very popular in many fields; anti-theft devices, smart card and library management. Recently, RFID biosensor chips have been reported, which integrates RFID and biosensor for inexpensive, small and subaqueous sensing system [1]. However, RFID system typically uses external off-chip antennas, so that additional fabrication time and cost are required for the post process. This paper investigates the RFID biosensor with on-chip spiral inductor as the tag antenna. First of all, we assume the operating frequency 13.56 MHz that is suitable to subaqueous measuring system. Secondly, we simplify the process and reduce cost by integrating sensor chip and on-chip spiral inductor tag antenna that is fabricated with metal interconnect layer of standard complementary metal oxide semiconductor (CMOS) process. Finally, we propose the RFID biosensor circuitary (new modulation circuit and signal processing circuit), and the operation is confirmed by measurement. With such advances, low cost, low noise and simple measuring system can be expected.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86608487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohd Ubaidillah Mustafa, M. Agam, Nor Rashidah Md Juremi, F. Mohamad, P. J. Wibawa, Ahmad Hadi Ali
It has been reported that polymer resist such as PMMA (Polymethyl methacrylate) which is a well known and commonly used polymer resist for fabrication of electronic devices can show zwitter characteristic due to over exposure of electron beam [1]. They tend to change their molecular structure to either become negative or positive resist corresponded to irradiation doses. These characteristic was due to crosslinking and scissors of the PMMA molecular structures, but till now the understanding of crosslinking and scissors of the polymer resist molecular structure due to electron beam exposure were still unknown to researchers [2–5].
{"title":"Physical and chemical changes of polystyrene nanospheres irradiated with laser","authors":"Mohd Ubaidillah Mustafa, M. Agam, Nor Rashidah Md Juremi, F. Mohamad, P. J. Wibawa, Ahmad Hadi Ali","doi":"10.1063/1.3586956","DOIUrl":"https://doi.org/10.1063/1.3586956","url":null,"abstract":"It has been reported that polymer resist such as PMMA (Polymethyl methacrylate) which is a well known and commonly used polymer resist for fabrication of electronic devices can show zwitter characteristic due to over exposure of electron beam [1]. They tend to change their molecular structure to either become negative or positive resist corresponded to irradiation doses. These characteristic was due to crosslinking and scissors of the PMMA molecular structures, but till now the understanding of crosslinking and scissors of the polymer resist molecular structure due to electron beam exposure were still unknown to researchers [2–5].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90800816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Y. Tiong, A. Ismardi, M. Yahya, C. Dee, B. Yeop Majlis
Sn doped ZnO nanobelts have been synthesized by using thermal evaporation method. Sn powder was mixed with the ZnO and graphite grain powder as the growth reactant for obtaining doped ZnO nanobelts. This nanobelts was prepared under nitrogen ambient and at temperature 1000°C. The nanobelts formed were observed under X-ray diffraction (XRD), scanning electron microscope (SEM) and analysis of its electrical and optical properties also was determined. The growth mechanisms of the Sn doped ZnO nanobelt and its potential applications are further discussed.
{"title":"The growth of Sn doped ZnO nanobelts and their properties","authors":"T. Y. Tiong, A. Ismardi, M. Yahya, C. Dee, B. Yeop Majlis","doi":"10.1063/1.3586966","DOIUrl":"https://doi.org/10.1063/1.3586966","url":null,"abstract":"Sn doped ZnO nanobelts have been synthesized by using thermal evaporation method. Sn powder was mixed with the ZnO and graphite grain powder as the growth reactant for obtaining doped ZnO nanobelts. This nanobelts was prepared under nitrogen ambient and at temperature 1000°C. The nanobelts formed were observed under X-ray diffraction (XRD), scanning electron microscope (SEM) and analysis of its electrical and optical properties also was determined. The growth mechanisms of the Sn doped ZnO nanobelt and its potential applications are further discussed.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84943973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Johari, N. Aziziah Amin, M. Ahmadi, D. Chek, S. Mahdi Mousavi, R. Ismail
Graphene is a single atomic layer of carbon atoms arranged into a two-dimensional (2D) hexagonal lattice [1,2,3] much like a honeycomb. Graphene Nanoribbons, (GNRs) on the other hand is a single-layer of graphite. It managed to capture wide attention of researchers that it is a new exciting material with remarkable transport properties [3,4,5] such as high mobility [1,3,5] for ballistic transport [1,2], ignoring barriers created by imperfections and they show quantum effects [2] at room temperature. Graphene is considered to be an alternative to Si for the channel of field-effect transistor (FETs) [3]. Eventhough Carbon Nanotube (CNT) possess better electrical properties such as higher carrier mobility compared to Graphene Nanoribbons, GNRs we chose to use GNRs instead of CNT due to the reason that the chirality of CNT is very difficult to control during the fabrication in which the chirality of GNRs is easier to manage [6].
{"title":"Modeling of quantum capacitance of Graphene Nanoribbons","authors":"Z. Johari, N. Aziziah Amin, M. Ahmadi, D. Chek, S. Mahdi Mousavi, R. Ismail","doi":"10.1063/1.3587024","DOIUrl":"https://doi.org/10.1063/1.3587024","url":null,"abstract":"Graphene is a single atomic layer of carbon atoms arranged into a two-dimensional (2D) hexagonal lattice [1,2,3] much like a honeycomb. Graphene Nanoribbons, (GNRs) on the other hand is a single-layer of graphite. It managed to capture wide attention of researchers that it is a new exciting material with remarkable transport properties [3,4,5] such as high mobility [1,3,5] for ballistic transport [1,2], ignoring barriers created by imperfections and they show quantum effects [2] at room temperature. Graphene is considered to be an alternative to Si for the channel of field-effect transistor (FETs) [3]. Eventhough Carbon Nanotube (CNT) possess better electrical properties such as higher carrier mobility compared to Graphene Nanoribbons, GNRs we chose to use GNRs instead of CNT due to the reason that the chirality of CNT is very difficult to control during the fabrication in which the chirality of GNRs is easier to manage [6].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85962106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700978
M. S. Meor Yusoff, Mahdi E. Mahmoud, W. Paulus
Titania (TiO2) is a compound that is both familiar and abundant, having seen many applications in diverse areas such as cosmetics, coatings and water purification. Some common phases of titania are anatase (tetragonal), brookite (orthorhombic) and rutile (tetragonal). These phases occur naturally in minerals and are regularly extracted and separated from said ores. The size of titania particles are also paramount in determining its characteristics and potential application. The smaller the particle gets, the more diverse its potential application can be. With today's focus on nanotechnology, interest in how titania can play a role in this field is being pursued by many scientist and researchers. As a result of this fervor, we see nanosized titania being used in areas previously thought unfeasible, such as electrochromic devices, electronic sensors and photovoltaic cells. The inclusion of titania into these devices produces effects such as lengthening of process cycles and increased efficiency. The fabrication method mentioned above needs to be routinely modified to produce products that are deemed to be ‘nano’ in size, with determining factors such as crystallite/grain size and thickness being given special attention. Nanotitania also gives way to the significance of doping, where previously doping is seen as moderately affective; with nanotitania, it effect is profound and almost radical. Generally, doping in titania is divided into three categories, the first is a pure, undoped titania, the second is a metal-doped titania (Na, Mg, Li, Cr), dubbed a second generation titania, and the third is a nonmetal doped titania (F, Cl, Br), known as the third generation titania. Each doping, at the micron level or below, slightly alter properties such as reactivity and surface area by about 10–20%, or offer no changes, such as seen in the case of doping titania with iron, where no changes occurred in its photocatalytic activity level, while doping nanotitania will increase or decrease properties such as surface area by close to almost 40%.
{"title":"Annealing of bimetal doped and pure nanotitania: A comparative analysis","authors":"M. S. Meor Yusoff, Mahdi E. Mahmoud, W. Paulus","doi":"10.1109/ESCINANO.2010.5700978","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700978","url":null,"abstract":"Titania (TiO2) is a compound that is both familiar and abundant, having seen many applications in diverse areas such as cosmetics, coatings and water purification. Some common phases of titania are anatase (tetragonal), brookite (orthorhombic) and rutile (tetragonal). These phases occur naturally in minerals and are regularly extracted and separated from said ores. The size of titania particles are also paramount in determining its characteristics and potential application. The smaller the particle gets, the more diverse its potential application can be. With today's focus on nanotechnology, interest in how titania can play a role in this field is being pursued by many scientist and researchers. As a result of this fervor, we see nanosized titania being used in areas previously thought unfeasible, such as electrochromic devices, electronic sensors and photovoltaic cells. The inclusion of titania into these devices produces effects such as lengthening of process cycles and increased efficiency. The fabrication method mentioned above needs to be routinely modified to produce products that are deemed to be ‘nano’ in size, with determining factors such as crystallite/grain size and thickness being given special attention. Nanotitania also gives way to the significance of doping, where previously doping is seen as moderately affective; with nanotitania, it effect is profound and almost radical. Generally, doping in titania is divided into three categories, the first is a pure, undoped titania, the second is a metal-doped titania (Na, Mg, Li, Cr), dubbed a second generation titania, and the third is a nonmetal doped titania (F, Cl, Br), known as the third generation titania. Each doping, at the micron level or below, slightly alter properties such as reactivity and surface area by about 10–20%, or offer no changes, such as seen in the case of doping titania with iron, where no changes occurred in its photocatalytic activity level, while doping nanotitania will increase or decrease properties such as surface area by close to almost 40%.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83833975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701083
A. Ensafi
N-acetylcysteine (NAC) commonly known as acetylcysteine, is a pharmaceutical drug and nutritional supplement with numerous uses. Its primary use is as a mucolytic agent. The drug rapidly metabolizes to intracellular glutathione which acts as a powerful antioxidant in the body. Finally, it has been claimed to have a protective effect against cancer for its action as an antioxidant and a glutathione precursor [1]. Acetaminaphen (AC) is widely used as an analgesic anti-pyretic drug with similar effects as aspirin. It is regarded as a suitable replacement for aspirin in patients sensitive to aspirin or those with asthma. Intravenous acetylcysteine is typically administered for the treatment of paracetamol (acetaminophen) overdose [2]. Large quantities of paracetamol causes a minor metabolite called N-acetyl-p-benzoquinone imine (NAPQI) that accumulates in the body and is normally conjugated by glutathione. When taken in excess, the body's limited glutathione reserves fail to inactivate the toxic NAPQI. The metabolite thus produced is then free to react with key hepatic enzymes, damaging hepatocytes. This may lead to severe liver damage and even to death by fulminant liver failure [3]. Due to this fatal effect, simultaneous determination of these compounds (NAC & AC) is very important. However, a major problem is that at bare electrodes, the anodic peak potentials for NAC and AC are almost the same, which results in their overlapped current responses and makes their discrimination very difficult.
n -乙酰半胱氨酸(NAC)通常被称为乙酰半胱氨酸，是一种具有多种用途的药物和营养补充剂。它的主要用途是作为黏液溶解剂。该药物迅速代谢为细胞内谷胱甘肽，在体内作为一种强大的抗氧化剂。最后，它作为抗氧化剂和谷胱甘肽前体被认为具有抗癌保护作用[1]。对乙酰氨基酚(AC)作为一种镇痛解热药物被广泛使用，其作用与阿司匹林相似。它被认为是阿司匹林敏感患者或哮喘患者阿司匹林的合适替代品。静脉注射乙酰半胱氨酸通常用于治疗扑热息痛(对乙酰氨基酚)过量[2]。大量的扑热息痛会导致少量代谢物n -乙酰-对苯醌亚胺(NAPQI)在体内积累，通常由谷胱甘肽偶联。当摄入过量时，体内有限的谷胱甘肽储备不能使有毒的NAPQI失活。由此产生的代谢物随后自由地与关键的肝酶反应，损害肝细胞。这可能导致严重的肝损伤，甚至因暴发性肝衰竭而死亡[3]。由于这种致命的影响，同时测定这些化合物(NAC和AC)是非常重要的。然而，一个主要的问题是，在裸电极下，NAC和AC的阳极峰电位几乎相同，这导致它们的电流响应重叠，使得它们的识别非常困难。
{"title":"Simultaneous determination of N-acetylcysteine and acetaminophen by voltammetric method using N-(3,4-dihydroxyphenethyl)-3, 5 dinitrobenzamide modified multiwall carbon nanotube paste electrode nanostructured materials in advanced membrane technology for separation processes","authors":"A. Ensafi","doi":"10.1109/ESCINANO.2010.5701083","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701083","url":null,"abstract":"N-acetylcysteine (NAC) commonly known as acetylcysteine, is a pharmaceutical drug and nutritional supplement with numerous uses. Its primary use is as a mucolytic agent. The drug rapidly metabolizes to intracellular glutathione which acts as a powerful antioxidant in the body. Finally, it has been claimed to have a protective effect against cancer for its action as an antioxidant and a glutathione precursor [1]. Acetaminaphen (AC) is widely used as an analgesic anti-pyretic drug with similar effects as aspirin. It is regarded as a suitable replacement for aspirin in patients sensitive to aspirin or those with asthma. Intravenous acetylcysteine is typically administered for the treatment of paracetamol (acetaminophen) overdose [2]. Large quantities of paracetamol causes a minor metabolite called N-acetyl-p-benzoquinone imine (NAPQI) that accumulates in the body and is normally conjugated by glutathione. When taken in excess, the body's limited glutathione reserves fail to inactivate the toxic NAPQI. The metabolite thus produced is then free to react with key hepatic enzymes, damaging hepatocytes. This may lead to severe liver damage and even to death by fulminant liver failure [3]. Due to this fatal effect, simultaneous determination of these compounds (NAC & AC) is very important. However, a major problem is that at bare electrodes, the anodic peak potentials for NAC and AC are almost the same, which results in their overlapped current responses and makes their discrimination very difficult.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83053582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The preparation of carbon thin films by Pulsed Laser Deposition (PLD) has received much attention, because this method produces films which do not contain hydrogen [1] and have unusual properties such as good adherence on a variety of substrates, very high hardness, chemical inertness, low friction coefficient and electrical resistivity. It is known that the film properties strongly depend on the deposition conditions, but there have been few studies on the correlation between the deposition parameters and the growth mechanism. Two major factors which determine the film growth are the substrate temperature and the properties of the deposited energetic species which depend on laser wavelength and fluence [2, 3]. These two factors control the atom mobility on the film surface and thereby determine the physical characteristics of the deposited films such as the optical indices and microstructure. Considering the ever-decreasing dimensions of electronic devices, producing self-assembled micro- and nano-structured material systems is becoming increasingly commercially important. There is also significant academic interest in these systems, as their properties can be remarkably different from those of the bulk material due to quantum-sized effects. Since the discovery of carbon nanotubes [4], there has been a dramatic increase in the volume of research into tubular and rod-like nano- and micro-scale materials. Diamond-like carbon (DLC) films possess superb mechanical properties such as high hardness and a low friction coefficient [5]. They have diverse applications and are widely used in cutting and forming industries, especially for processing non-ferrous and particularly hard-to-machine materials.
{"title":"Carbon thin films deposition by KrF Pulsed Laser at different temperatures","authors":"R. Qindeel, K. Chaudhary, M. S. Hussain, J. Ali","doi":"10.1063/1.3586983","DOIUrl":"https://doi.org/10.1063/1.3586983","url":null,"abstract":"The preparation of carbon thin films by Pulsed Laser Deposition (PLD) has received much attention, because this method produces films which do not contain hydrogen [1] and have unusual properties such as good adherence on a variety of substrates, very high hardness, chemical inertness, low friction coefficient and electrical resistivity. It is known that the film properties strongly depend on the deposition conditions, but there have been few studies on the correlation between the deposition parameters and the growth mechanism. Two major factors which determine the film growth are the substrate temperature and the properties of the deposited energetic species which depend on laser wavelength and fluence [2, 3]. These two factors control the atom mobility on the film surface and thereby determine the physical characteristics of the deposited films such as the optical indices and microstructure. Considering the ever-decreasing dimensions of electronic devices, producing self-assembled micro- and nano-structured material systems is becoming increasingly commercially important. There is also significant academic interest in these systems, as their properties can be remarkably different from those of the bulk material due to quantum-sized effects. Since the discovery of carbon nanotubes [4], there has been a dramatic increase in the volume of research into tubular and rod-like nano- and micro-scale materials. Diamond-like carbon (DLC) films possess superb mechanical properties such as high hardness and a low friction coefficient [5]. They have diverse applications and are widely used in cutting and forming industries, especially for processing non-ferrous and particularly hard-to-machine materials.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74733285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, the study of photoluminescence (PL) and Raman spectroscopy of porous silicon nanostructures (NPSi) have been carried out. The samples were prepared by photo-electrochemical anodization method using p-type silicon wafer based. Photoluminescence measurement of NPSi shows increase of PL intensity and blue shift with increasing of etching time. The varies etching time from 20 min to 40 min produced PL emission at a range of 550–800 nm which is in the range of visible PL band [Fig. 1]. While Raman Spectroscopy measurement shows the spectra were symmetry and broaden when etching time increase from 20 min to 40 min [Fig. 2]. It may due to lattice mismatch strain and part of distortion [1] when porous layer form with increasing the etching time. The photon energy and full half width maximum (FWHM) measurement were carried out to study the optical properties of NPSi which can be used to study the quantum confinement effect.
{"title":"Raman and photoluminescence spectroscopy studies on porous silicon nanostructures","authors":"N. Asli, S. Yusop, M. Rusop, S. Abdullah","doi":"10.1063/1.3586962","DOIUrl":"https://doi.org/10.1063/1.3586962","url":null,"abstract":"In this work, the study of photoluminescence (PL) and Raman spectroscopy of porous silicon nanostructures (NPSi) have been carried out. The samples were prepared by photo-electrochemical anodization method using p-type silicon wafer based. Photoluminescence measurement of NPSi shows increase of PL intensity and blue shift with increasing of etching time. The varies etching time from 20 min to 40 min produced PL emission at a range of 550–800 nm which is in the range of visible PL band [Fig. 1]. While Raman Spectroscopy measurement shows the spectra were symmetry and broaden when etching time increase from 20 min to 40 min [Fig. 2]. It may due to lattice mismatch strain and part of distortion [1] when porous layer form with increasing the etching time. The photon energy and full half width maximum (FWHM) measurement were carried out to study the optical properties of NPSi which can be used to study the quantum confinement effect.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76789822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：