Biosensor is a device that can be widely used in several type of field such as food, agriculture and human cell. The concept of the bio-molecule detection is due to the idea of immobilization and hybridization of the cell or nucleic acid on the transducer. Biosensor is mainly used in the detection of biological element such as nucleic acid, cancel cell and enzyme.
{"title":"Design and fabrication of Nano Biologically sensitive field-effect transistor (Nano Bio-FET) for bio-molecule detection","authors":"K. L. Foo, M. Kashif, Uda Hashim","doi":"10.1063/1.3587002","DOIUrl":"https://doi.org/10.1063/1.3587002","url":null,"abstract":"Biosensor is a device that can be widely used in several type of field such as food, agriculture and human cell. The concept of the bio-molecule detection is due to the idea of immobilization and hybridization of the cell or nucleic acid on the transducer. Biosensor is mainly used in the detection of biological element such as nucleic acid, cancel cell and enzyme.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74895318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Haroon, H. Abdul Razak, M. Bidin, S. Shaari, P. Sushita Menon
Silicon high-speed waveguide-integrated electro-optic modulator is one of the critical devices for on-chip optical networks. The device converts data from electrical domain to the optical domain. Most studies for high speed modulation method in Si or Si based device are based on free carrier concentration variations (injection or depletion of free carriers) which are responsible for local refractive index variations and then phase modulation of a guided wave traveling through the active region. A change in the refractive index/absorption can be achieved by injection or depletion of both electron and holes into the intrinsic region of a silicon p-i-n diode.
{"title":"Free carrier absorption loss of p-i-n silicon-on-insulator (SOI) phase modulator","authors":"H. Haroon, H. Abdul Razak, M. Bidin, S. Shaari, P. Sushita Menon","doi":"10.1063/1.3586993","DOIUrl":"https://doi.org/10.1063/1.3586993","url":null,"abstract":"Silicon high-speed waveguide-integrated electro-optic modulator is one of the critical devices for on-chip optical networks. The device converts data from electrical domain to the optical domain. Most studies for high speed modulation method in Si or Si based device are based on free carrier concentration variations (injection or depletion of free carriers) which are responsible for local refractive index variations and then phase modulation of a guided wave traveling through the active region. A change in the refractive index/absorption can be achieved by injection or depletion of both electron and holes into the intrinsic region of a silicon p-i-n diode.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75559646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700997
P. Saad, F. Zahid, A. S. Hamzah, M. Mahmood
Recently, researches on composites of organic blend inorganic materials have become one of the promising materials for electronic device applications [1]. There is a study which shows that a red conjugated polymer with energy levels located between electron donors and acceptors can act as an electron acceptor or donor in efficient solar cells [2]. The interaction between titanium dioxide (TiO2) powder and poly [2-methoxy, 5-(2′-ethyl-hexyloxy)-phenylenevinylene] (MEHPPV) have been studied to investigate the role of charge pair separation and photocurrent generation in organic solar cells.
{"title":"Optical band gap of nanocompsoite MEH-PPV:TiO2 thin film","authors":"P. Saad, F. Zahid, A. S. Hamzah, M. Mahmood","doi":"10.1109/ESCINANO.2010.5700997","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700997","url":null,"abstract":"Recently, researches on composites of organic blend inorganic materials have become one of the promising materials for electronic device applications [1]. There is a study which shows that a red conjugated polymer with energy levels located between electron donors and acceptors can act as an electron acceptor or donor in efficient solar cells [2]. The interaction between titanium dioxide (TiO2) powder and poly [2-methoxy, 5-(2′-ethyl-hexyloxy)-phenylenevinylene] (MEHPPV) have been studied to investigate the role of charge pair separation and photocurrent generation in organic solar cells.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76083178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701047
M. Ayatollahi, S. Shadlou, M. Shokrieh
Because of their remarkable mechanical, electrical and thermal properties, carbon nanotubes (CNTs) reinforced nanocomposites have always been considerably attractive [1]. Yokozeki et al. [2] reported retardation of the matrix crack onset and accumulation in composite laminates containing cup-stacked CNTs compared to those without cup-stacked CNTs.
{"title":"Multi-scale modeling of nonlinear mechanical behavior of polymer/SWNT nanocomposites: Investigation of interphase","authors":"M. Ayatollahi, S. Shadlou, M. Shokrieh","doi":"10.1109/ESCINANO.2010.5701047","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701047","url":null,"abstract":"Because of their remarkable mechanical, electrical and thermal properties, carbon nanotubes (CNTs) reinforced nanocomposites have always been considerably attractive [1]. Yokozeki et al. [2] reported retardation of the matrix crack onset and accumulation in composite laminates containing cup-stacked CNTs compared to those without cup-stacked CNTs.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76123033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The development and application of micro and nanogap for electrochemical sensors and biomoleculs detection are reviewed in this article. The preparation methods of micro and nanogap and their properties are discussed along with their advantages towards electrochemical sensors and biomolecules detection. In the recent year, the biological and medical field has seen great advances in the development of biosensors and biochips capable of characterizing and quantifying electrochemical sensor. To understand the important relationship between the sensibility and nano structure we introduce this article about the fabrication and characterization of micro and nanogap structure for electrochemical sensor. In this paper, 2 masks designs are proposed. First mask is the lateral micro and nanogap with Al electrode and the second mask is for pad Al electrode pattern. Lateral micro gaps are introduced in the fabrication process using a-silicon and Al as an electrode. Conventional UV lithography technique and dry etching for a-Si layer with wet etching for Al surface processes are used to fabricate the micro and nanogap based on the standard CMOS technology and characterization of its conductivity. The electrical characterization are applied by using Semiconductor Parameter Analyzer (SPA), Spectrum Analyzer, IV–CV Station for electrical characteristic, Conductivity, resistivity and capacitance test is performed to characterize and check the structure of the device, which resulted in a small microgap as was revealed by further I–V curve result that showed a current in nano amps. On verification with literature the characteristics of the fabricated gap was close to that of a microgap.
{"title":"Fabrication and characterization of a-Si micro and nano-gap structure for electrochemical sensor","authors":"T. Dhahi, U. Hashim, N. M. Ahmed, Md. Eaqub Ali","doi":"10.1063/1.3587001","DOIUrl":"https://doi.org/10.1063/1.3587001","url":null,"abstract":"The development and application of micro and nanogap for electrochemical sensors and biomoleculs detection are reviewed in this article. The preparation methods of micro and nanogap and their properties are discussed along with their advantages towards electrochemical sensors and biomolecules detection. In the recent year, the biological and medical field has seen great advances in the development of biosensors and biochips capable of characterizing and quantifying electrochemical sensor. To understand the important relationship between the sensibility and nano structure we introduce this article about the fabrication and characterization of micro and nanogap structure for electrochemical sensor. In this paper, 2 masks designs are proposed. First mask is the lateral micro and nanogap with Al electrode and the second mask is for pad Al electrode pattern. Lateral micro gaps are introduced in the fabrication process using a-silicon and Al as an electrode. Conventional UV lithography technique and dry etching for a-Si layer with wet etching for Al surface processes are used to fabricate the micro and nanogap based on the standard CMOS technology and characterization of its conductivity. The electrical characterization are applied by using Semiconductor Parameter Analyzer (SPA), Spectrum Analyzer, IV–CV Station for electrical characteristic, Conductivity, resistivity and capacitance test is performed to characterize and check the structure of the device, which resulted in a small microgap as was revealed by further I–V curve result that showed a current in nano amps. On verification with literature the characteristics of the fabricated gap was close to that of a microgap.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82518879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700967
K. Al-Heuseen, M. R. Hashim, N. Ali
Recently porous semiconductors have stimulated much of interests, because they exhibit different physical properties relative to those of bulk crystals. The high surface area, band gap shift, and efficient luminescence promised the use of porous semiconductor over a wide range, from optoelectronics to chemical and biochemical sensors applications. One of the most common techniques to fabricate porous GaN is the photo-assisted electrochemical etching. The main factor in the photo-assisted electrochemical etching is the electrolyte. When immersed in an electrolyte, the semiconductor exchanges electrons with the electrolyte along the surface because the Fermi level in the semiconductor is different from that of the electrolyte. As in the semiconductor-metal contacts, an energy barrier is formed, the effective height of which is often fixed by the distribution of surface states in the semiconductor. This paper investigates the use of four different electrolytes to study the electrical properties of the electrolyte-GaN contacts in the photoelectrochemical etching processes. Thermionic emission theory is used to investigate the mechanism of the current transport through metal-semiconductor interfaces. From I-V characterization, the Schottky barrier height, ideality factor, and series resistance are calculated.
{"title":"Electrical properties of electrolyte-GaN junction during photoelectrical etching processing","authors":"K. Al-Heuseen, M. R. Hashim, N. Ali","doi":"10.1109/ESCINANO.2010.5700967","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700967","url":null,"abstract":"Recently porous semiconductors have stimulated much of interests, because they exhibit different physical properties relative to those of bulk crystals. The high surface area, band gap shift, and efficient luminescence promised the use of porous semiconductor over a wide range, from optoelectronics to chemical and biochemical sensors applications. One of the most common techniques to fabricate porous GaN is the photo-assisted electrochemical etching. The main factor in the photo-assisted electrochemical etching is the electrolyte. When immersed in an electrolyte, the semiconductor exchanges electrons with the electrolyte along the surface because the Fermi level in the semiconductor is different from that of the electrolyte. As in the semiconductor-metal contacts, an energy barrier is formed, the effective height of which is often fixed by the distribution of surface states in the semiconductor. This paper investigates the use of four different electrolytes to study the electrical properties of the electrolyte-GaN contacts in the photoelectrochemical etching processes. Thermionic emission theory is used to investigate the mechanism of the current transport through metal-semiconductor interfaces. From I-V characterization, the Schottky barrier height, ideality factor, and series resistance are calculated.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75307353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701004
S. Muhamad, M. Z. Sahdan, M. H. Mamat, M. Rusop
Zinc oxide (ZnO) is a promising candidates for electronics devices applications due to its unique properties that being extensively explored nowadays. Having a large bandgap of 3.4 eV at room temperature and large exciton binding energy of 60 meV [1] has made ZnO to become transparent to visible light. MgZnO also transparent to visible light where the bandgap can be tailored to reach almost 4.6 eV [2]. By introducing these two transparent materials in MESFET applications, such transistor could be particularly useful in display technologies as the transistor will no longer block the light. Mg0.3Zn0.7O with the resistance of 106 Ω/cm [3], can acts as a semi-insulating material in MESFET structure, was deposited on quartz substrate before being immersed in ZnO solution for 4.5 hours. The ZnO solution of 0.05M was prepared one day earlier, was stirred and heat, before being left at room temperature to get better solubility. This chemical bath deposition technique was believed to be very easy, low cost technique, yet can produced a very uniform, aligned ZnO nanorods. Field emission scanning electron microscope (FESEM) depicts that an aligned ZnO nanorods were successfully grown as in Fig. 1 on Mg0.3Zn0.7O that in the other way has acted as a catalyst for the better growth of aligned ZnO. The diameter of the nanorod has found out to be in the average of 75 nm while the thickness is around 1.6 µm. X-ray diffraction spectra has recorded that this aligned ZnO shows very intense (002) peak, which was between 15° and 60°, indicating a high degree of crystallinity. Keithley measurement system has been employed to study the IV response of this heterojunction of ZnO/Mg0.3Zn0.7O. It is well understood that different metal used as a contact will resulted in a different behavior of IV responses. Due to that, 4 different metals has been used to study the IV responses. For the metallization purposed, electron beam evaporator has been employed to deposit aluminum, gold, platinum and nickel as a metal contact. It shows that these 4 selected metals gave different behavior of IV responses due to different work function of each metal. To study the performance of aligned ZnO/Mg0.3Zn0.7O heterostructures, the IV response of thin film ZnO, thin film ZnO/Mg0.3Zn0.7O, and thin film Mg0.3Zn0.7O has been taken as a reference. It obviously revealed that aligned ZnO/Mg0.3Zn0.7O heterostructures gave better performance of IV responses compared to others which will be discussed further in this paper. It is suggested that this heterostructures can be used in MESFET applications due to its simplicity in fabrication and the IV performance that suitable for the use of transparent transistor in display technologies.
{"title":"I–V performances of aligned ZnO nanorods/Mg0.3Zn0.7O thin film heterojunction for MESFET applications","authors":"S. Muhamad, M. Z. Sahdan, M. H. Mamat, M. Rusop","doi":"10.1109/ESCINANO.2010.5701004","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701004","url":null,"abstract":"Zinc oxide (ZnO) is a promising candidates for electronics devices applications due to its unique properties that being extensively explored nowadays. Having a large bandgap of 3.4 eV at room temperature and large exciton binding energy of 60 meV [1] has made ZnO to become transparent to visible light. MgZnO also transparent to visible light where the bandgap can be tailored to reach almost 4.6 eV [2]. By introducing these two transparent materials in MESFET applications, such transistor could be particularly useful in display technologies as the transistor will no longer block the light. Mg0.3Zn0.7O with the resistance of 106 Ω/cm [3], can acts as a semi-insulating material in MESFET structure, was deposited on quartz substrate before being immersed in ZnO solution for 4.5 hours. The ZnO solution of 0.05M was prepared one day earlier, was stirred and heat, before being left at room temperature to get better solubility. This chemical bath deposition technique was believed to be very easy, low cost technique, yet can produced a very uniform, aligned ZnO nanorods. Field emission scanning electron microscope (FESEM) depicts that an aligned ZnO nanorods were successfully grown as in Fig. 1 on Mg0.3Zn0.7O that in the other way has acted as a catalyst for the better growth of aligned ZnO. The diameter of the nanorod has found out to be in the average of 75 nm while the thickness is around 1.6 µm. X-ray diffraction spectra has recorded that this aligned ZnO shows very intense (002) peak, which was between 15° and 60°, indicating a high degree of crystallinity. Keithley measurement system has been employed to study the IV response of this heterojunction of ZnO/Mg0.3Zn0.7O. It is well understood that different metal used as a contact will resulted in a different behavior of IV responses. Due to that, 4 different metals has been used to study the IV responses. For the metallization purposed, electron beam evaporator has been employed to deposit aluminum, gold, platinum and nickel as a metal contact. It shows that these 4 selected metals gave different behavior of IV responses due to different work function of each metal. To study the performance of aligned ZnO/Mg0.3Zn0.7O heterostructures, the IV response of thin film ZnO, thin film ZnO/Mg0.3Zn0.7O, and thin film Mg0.3Zn0.7O has been taken as a reference. It obviously revealed that aligned ZnO/Mg0.3Zn0.7O heterostructures gave better performance of IV responses compared to others which will be discussed further in this paper. It is suggested that this heterostructures can be used in MESFET applications due to its simplicity in fabrication and the IV performance that suitable for the use of transparent transistor in display technologies.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72955510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700957
T. Mon, Z. Ghazalli, A. H. Ahmad, M. F. Ismail, Khairul Fikri Muhamad
Electrostatic comb actuators are commonly used to provide displacement-invariant force in micro electro-mechanical system (MEMS). Major application can be found in resonator, inertial sensor, accelerometer, and gyroscope. The size of the comb may be a few microns to millimeters. Principally, the electrostatic force is produced in the comb structure due to potential difference between the electrodes, which is used to actuate the system attached to it [1]. The higher forces are very often desirable for high sensitivity and performance. However to meet this demand, micro-scaled structures are very often fabricated on trial-error basis because of lack of well-established fabrication method. In this situation, designing on a computer prior to the actual fabrication would be very helpful. Moreover, in a virtual device, parameters can be changed much more quickly than trial-and-error fabrication reducing the time to market and also the cost to develop a commercial device considerably [2].
{"title":"Design of electrostatic comb actuators based on finite element method","authors":"T. Mon, Z. Ghazalli, A. H. Ahmad, M. F. Ismail, Khairul Fikri Muhamad","doi":"10.1109/ESCINANO.2010.5700957","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700957","url":null,"abstract":"Electrostatic comb actuators are commonly used to provide displacement-invariant force in micro electro-mechanical system (MEMS). Major application can be found in resonator, inertial sensor, accelerometer, and gyroscope. The size of the comb may be a few microns to millimeters. Principally, the electrostatic force is produced in the comb structure due to potential difference between the electrodes, which is used to actuate the system attached to it [1]. The higher forces are very often desirable for high sensitivity and performance. However to meet this demand, micro-scaled structures are very often fabricated on trial-error basis because of lack of well-established fabrication method. In this situation, designing on a computer prior to the actual fabrication would be very helpful. Moreover, in a virtual device, parameters can be changed much more quickly than trial-and-error fabrication reducing the time to market and also the cost to develop a commercial device considerably [2].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74160785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700969
M. Hussein, S. A. Zakarya, Z. Zainal, S. H. Sarijo
Cockle contributes to about 30 to 40 percent of marine aquaculture production in Malaysia and there is a plentiful and increasing supply of blood cockle shells. Since the shells do not have any other important uses and are commonly regarded as waste material, the calcite obtained from blood cockle (Anadara granosa) shells was used as the supporting material for catalyst to be used in carbon nanotubes (CNTs) synthesis.
{"title":"Cockle (Anadara granosa) shells as substrate for the synthesis of carbon nanotubes","authors":"M. Hussein, S. A. Zakarya, Z. Zainal, S. H. Sarijo","doi":"10.1109/ESCINANO.2010.5700969","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700969","url":null,"abstract":"Cockle contributes to about 30 to 40 percent of marine aquaculture production in Malaysia and there is a plentiful and increasing supply of blood cockle shells. Since the shells do not have any other important uses and are commonly regarded as waste material, the calcite obtained from blood cockle (Anadara granosa) shells was used as the supporting material for catalyst to be used in carbon nanotubes (CNTs) synthesis.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76063258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Yulianti, A. Supa’at, S. M. Idrus, M. Ridwanto, A. Al-hetar
Optical couplers are important components for signal distribution in optoelectronic transmitter/receiver modules. Y-junction waveguide is an attractive candidate for optical coupler due to its less wavelength and polarization dependent. However, they suffer from excess loss due to the mode field/wave-front mismatch between the output and input branches. Furthermore, the difference between the outputs according to the mismatch of the optical signal further increases when the optical signal is a multi-channel signal. In addition to the loss due to the mode mismatch, the connection loss due to the corner-bent waveguide also occurs in a conventional Y-branch. Various methods have been proposed to reduce the junction excess loss by modifying the physical geometry of the Y-junction directly. The Y-junction power divider geometry with asymmetry waveguide structure by increasing the rib height of the waveguide only from the inner side of the branches has been proposed [1]. Gamet and Pandraud [2] proposed segemented silica waveguides to reduce loss of the Y-branch. This paper presents optical coupler which is formed of segmented waveguide to reduce effective refractive index in the branching region and modified cosine S-bend to provide smooth connection to the tapered waveguide.
{"title":"Low loss 1×2 optical coupler based on cosine S-bend with segmented waveguide","authors":"I. Yulianti, A. Supa’at, S. M. Idrus, M. Ridwanto, A. Al-hetar","doi":"10.1063/1.3586994","DOIUrl":"https://doi.org/10.1063/1.3586994","url":null,"abstract":"Optical couplers are important components for signal distribution in optoelectronic transmitter/receiver modules. Y-junction waveguide is an attractive candidate for optical coupler due to its less wavelength and polarization dependent. However, they suffer from excess loss due to the mode field/wave-front mismatch between the output and input branches. Furthermore, the difference between the outputs according to the mismatch of the optical signal further increases when the optical signal is a multi-channel signal. In addition to the loss due to the mode mismatch, the connection loss due to the corner-bent waveguide also occurs in a conventional Y-branch. Various methods have been proposed to reduce the junction excess loss by modifying the physical geometry of the Y-junction directly. The Y-junction power divider geometry with asymmetry waveguide structure by increasing the rib height of the waveguide only from the inner side of the branches has been proposed [1]. Gamet and Pandraud [2] proposed segemented silica waveguides to reduce loss of the Y-branch. This paper presents optical coupler which is formed of segmented waveguide to reduce effective refractive index in the branching region and modified cosine S-bend to provide smooth connection to the tapered waveguide.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78121954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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