Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105748
H. Rong, Baoming Wang, Miao Lu
A simple, room temperature process was reported to fluidic assemble dense, vertically aligned SWNTs between two chips and connect them together. This technology has the potential capability to attach a die to its heat sink in packaging replacing the common available die adhesives by virtue of better mechanical and thermal properties. Two chips with trench about 2 μm deep on the pre-treated surface were pressed together face to face, and SWNT aqueous solution was driven into the gap between the two chips by capillary force. SWNTs beams were found to be assembled and have their two ends bonding with the two chips simultaneously. The mechanism of this phenomenon was explored experimentally and theoretically. In further, a series of experiments with different process parameters like different solution concentration, different dimensions of the trenches, multiply dipping and baking cycles were implemented, and the shear strength between the two chips with these different processing parameters was measured after removing moisture completely. In result, shear strength up to about 100 kPa was demonstrated.
{"title":"Fluidic aligned, dense SWNTs arrays as potential die adhesive and thermal interface material","authors":"H. Rong, Baoming Wang, Miao Lu","doi":"10.1109/ISAPM.2011.6105748","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105748","url":null,"abstract":"A simple, room temperature process was reported to fluidic assemble dense, vertically aligned SWNTs between two chips and connect them together. This technology has the potential capability to attach a die to its heat sink in packaging replacing the common available die adhesives by virtue of better mechanical and thermal properties. Two chips with trench about 2 μm deep on the pre-treated surface were pressed together face to face, and SWNT aqueous solution was driven into the gap between the two chips by capillary force. SWNTs beams were found to be assembled and have their two ends bonding with the two chips simultaneously. The mechanism of this phenomenon was explored experimentally and theoretically. In further, a series of experiments with different process parameters like different solution concentration, different dimensions of the trenches, multiply dipping and baking cycles were implemented, and the shear strength between the two chips with these different processing parameters was measured after removing moisture completely. In result, shear strength up to about 100 kPa was demonstrated.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83858142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105753
J. Lau
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.
{"title":"Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration","authors":"J. Lau","doi":"10.1109/ISAPM.2011.6105753","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105753","url":null,"abstract":"3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88261693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105695
Yang Sijia, Y. Xiaohua, L. Xiaoyan
This study was concerned on the growth behavior and the size characteristics of the interfacial intermetallic compounds (IMCs) between solder and Cu substrates during isothermal aging. Through the analysis of the 3D volume, 2D area, and the thickness of the IMC, a scientific method of characterization of the IMC's thickness size was found. That is using the image analysis software to calculate areas(S) of the cross-section at the thickness direction from a certain volume IMC, find out the whole IMC's average thickness(x). In this paper, the SnAgCu/Cu specimens were aged at 150°C for 24h, 48h, 120h, 240h, 480h. The above method was used to measure the thickness at different aging time. The quantitative relationship between IMC's thickness(x) and aging time(t) can be obtained on condition of above experiment by IMC's growth curve fitting. With the increase of aging time, the grain size of the interfacial Cu6Sn5 increased and the morphology of the interfacial Cu6Sn5 was changed from scallop-like to needle-like and then to rod-like. In this study, we also use the method to measure the solder IMC's thickness from other references. It was found that the measured data was more fitting with the index growth low and the curve fit. Key words: IMC; isothermal aging; lead-free solder
{"title":"IMC's growth behavior and the characterization of its size during isothermal aging","authors":"Yang Sijia, Y. Xiaohua, L. Xiaoyan","doi":"10.1109/ISAPM.2011.6105695","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105695","url":null,"abstract":"This study was concerned on the growth behavior and the size characteristics of the interfacial intermetallic compounds (IMCs) between solder and Cu substrates during isothermal aging. Through the analysis of the 3D volume, 2D area, and the thickness of the IMC, a scientific method of characterization of the IMC's thickness size was found. That is using the image analysis software to calculate areas(S) of the cross-section at the thickness direction from a certain volume IMC, find out the whole IMC's average thickness(x). In this paper, the SnAgCu/Cu specimens were aged at 150°C for 24h, 48h, 120h, 240h, 480h. The above method was used to measure the thickness at different aging time. The quantitative relationship between IMC's thickness(x) and aging time(t) can be obtained on condition of above experiment by IMC's growth curve fitting. With the increase of aging time, the grain size of the interfacial Cu6Sn5 increased and the morphology of the interfacial Cu6Sn5 was changed from scallop-like to needle-like and then to rod-like. In this study, we also use the method to measure the solder IMC's thickness from other references. It was found that the measured data was more fitting with the index growth low and the curve fit. Key words: IMC; isothermal aging; lead-free solder","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82215417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105688
Qingjun Lu, H. Xue, Zhan Shi, Z. Xiong, P. Hu, Zhibin Zheng, Xiaopeng Xiao
A conversion was facilitated with magneto-electric effect between energies stored in ferromagnetic form and piezoelectric one in material. This paper is concerned with magneto-electric performance of composites with a bi-layered structure for ceramic (Na0.5K0.45Li0.05)(Nb0.9Ta0.08Sb0.02)O3, i.e., KNN, and metal nickel. Lead-free piezoelectric KNN ceramics were synthesized by the two-step sintering process. More than 96% of theoretical density for the ceramics was obtained, and, the d33 of the KNN sample was about 300pC/N. Based on the high piezoelectric performance of the KNN ceramic, a lead-free magneto-electric composite was prepared by gluing KNN ceramic with Ni plate together. The magneto-electric effect of the bi-layered composites with various thickness ratios was investigated in details, with a magneto-electric coefficient of about 10mV/Oe.
{"title":"Magneto-electric effect of KNN-Ni composites","authors":"Qingjun Lu, H. Xue, Zhan Shi, Z. Xiong, P. Hu, Zhibin Zheng, Xiaopeng Xiao","doi":"10.1109/ISAPM.2011.6105688","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105688","url":null,"abstract":"A conversion was facilitated with magneto-electric effect between energies stored in ferromagnetic form and piezoelectric one in material. This paper is concerned with magneto-electric performance of composites with a bi-layered structure for ceramic (Na0.5K0.45Li0.05)(Nb0.9Ta0.08Sb0.02)O3, i.e., KNN, and metal nickel. Lead-free piezoelectric KNN ceramics were synthesized by the two-step sintering process. More than 96% of theoretical density for the ceramics was obtained, and, the d33 of the KNN sample was about 300pC/N. Based on the high piezoelectric performance of the KNN ceramic, a lead-free magneto-electric composite was prepared by gluing KNN ceramic with Ni plate together. The magneto-electric effect of the bi-layered composites with various thickness ratios was investigated in details, with a magneto-electric coefficient of about 10mV/Oe.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73399159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105731
Hongqi Sun, J. Sun, D. Ding, Chun Chen, Ming Li, Yan-Feng He
In response to lead-free requirements and market forces, pure tin finishes have been widely used as a Pb-free option for semiconductor lead frames and electrical connectors in the microelectronics industry. Pure tin finishes could easy have a discoloration during reflow process since the reflow temperature is as high as 260°C, which could lead to a reliability issue. In this work, matte tin was electroplated onto C194 substrate. The microstructure of the deposit fabricated at different current density and different stannous concentrations was investigated with scanning electron microscope (SEM). It was found that, with increase of the current density and decrease of the stannous concentration, the grain size became smaller and the grain structure became looser, which resulted in the discoloration of pure tin finishes. Moreover, the compactness of the deposit and the current efficiency were also reduced. Copper diffusion was found to occur more easily in the deposit with a lower compactness, which may promote interfacial reaction to form intermetallic compounds (IMC) and further accelerate reflow discoloration of the pure Sn deposits.
{"title":"Effect of deposit microstructure on the reflow discoloration of electroplating pure tin","authors":"Hongqi Sun, J. Sun, D. Ding, Chun Chen, Ming Li, Yan-Feng He","doi":"10.1109/ISAPM.2011.6105731","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105731","url":null,"abstract":"In response to lead-free requirements and market forces, pure tin finishes have been widely used as a Pb-free option for semiconductor lead frames and electrical connectors in the microelectronics industry. Pure tin finishes could easy have a discoloration during reflow process since the reflow temperature is as high as 260°C, which could lead to a reliability issue. In this work, matte tin was electroplated onto C194 substrate. The microstructure of the deposit fabricated at different current density and different stannous concentrations was investigated with scanning electron microscope (SEM). It was found that, with increase of the current density and decrease of the stannous concentration, the grain size became smaller and the grain structure became looser, which resulted in the discoloration of pure tin finishes. Moreover, the compactness of the deposit and the current efficiency were also reduced. Copper diffusion was found to occur more easily in the deposit with a lower compactness, which may promote interfacial reaction to form intermetallic compounds (IMC) and further accelerate reflow discoloration of the pure Sn deposits.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84576451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105730
Q. Zhang, Z. Zhang
In this study, the creep-fatigue behaviors of the Sn-4Ag/Cu solder joints were investigated using in-situ tensile stage. The results reveal that the creep-fatigue process is composed by the strain hardening stage, steady deforming stage and accelerating fracture stage. During the initial few cycles, the strain increases rapidly because the solder is soft. After the strain hardening becomes saturated, the strain increases linearly with increasing cycles, strain concentration occurs in the solder close to the joint interfaces and generates the initial microcracks. When the microcracks connect to form long cracks, the failure accelerates and the specimens fracture along the joint interface shortly after that. Dislocation climb is predicated to be the major creep mechanism.
{"title":"Low cycle creep-fatigue behaviors of Sn-4Ag/Cu solder joints","authors":"Q. Zhang, Z. Zhang","doi":"10.1109/ISAPM.2011.6105730","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105730","url":null,"abstract":"In this study, the creep-fatigue behaviors of the Sn-4Ag/Cu solder joints were investigated using in-situ tensile stage. The results reveal that the creep-fatigue process is composed by the strain hardening stage, steady deforming stage and accelerating fracture stage. During the initial few cycles, the strain increases rapidly because the solder is soft. After the strain hardening becomes saturated, the strain increases linearly with increasing cycles, strain concentration occurs in the solder close to the joint interfaces and generates the initial microcracks. When the microcracks connect to form long cracks, the failure accelerates and the specimens fracture along the joint interface shortly after that. Dislocation climb is predicated to be the major creep mechanism.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85922520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105741
Shaohua Yang, Hailong Liu
Moisture penetrating into the polymer and subsequent hygroswelling stress play an important role in the integrity and reliability of plastic electronic packages. In this paper, moisture absorption experiments of four types of plastic encapsulated microcircuits (PEMs) were conducted. Moisture diffusion characteristics of PEMs available by experiments were measured and typical moisture diffusion characteristics were calculated. Fickian second law controls distribution of moisture concentration in plastic packages, and it was found that moisture transport deviations from ideal Fickian behavior under the higher temperature and humidity stresses, which is the so-called non-Fickan diffusion. It was attributed to the “two-stage” sorption. Analysis of moisture diffusion coefficients shows that different packages have values varying largely. Besides, comparing the saturated moisture and vapor concentration, it can be found that the moisture exists with combining state of liquid and vapor in plastic electronic packages, which probably a main cause of non-Fickian moisture diffusion. So the experimental results indicated that it's necessary to measure the moisture diffusion coefficient in plastic electronic packages in order to reduce potential risk during their assembly process and long-term applications.
{"title":"Experimental studies of non-Fickian moisture diffusion in plastic packages","authors":"Shaohua Yang, Hailong Liu","doi":"10.1109/ISAPM.2011.6105741","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105741","url":null,"abstract":"Moisture penetrating into the polymer and subsequent hygroswelling stress play an important role in the integrity and reliability of plastic electronic packages. In this paper, moisture absorption experiments of four types of plastic encapsulated microcircuits (PEMs) were conducted. Moisture diffusion characteristics of PEMs available by experiments were measured and typical moisture diffusion characteristics were calculated. Fickian second law controls distribution of moisture concentration in plastic packages, and it was found that moisture transport deviations from ideal Fickian behavior under the higher temperature and humidity stresses, which is the so-called non-Fickan diffusion. It was attributed to the “two-stage” sorption. Analysis of moisture diffusion coefficients shows that different packages have values varying largely. Besides, comparing the saturated moisture and vapor concentration, it can be found that the moisture exists with combining state of liquid and vapor in plastic electronic packages, which probably a main cause of non-Fickian moisture diffusion. So the experimental results indicated that it's necessary to measure the moisture diffusion coefficient in plastic electronic packages in order to reduce potential risk during their assembly process and long-term applications.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91441331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105723
G. Wei, D. Luo, H. Gao, Guanghui He
The effect of adding Ti in Sn0.7Cu lead-free solder on the wettability and interfacial reaction between the solder and Cu substrate was investigated. The results show that the wettability can be improved by adding Ti in Sn0.7Cu solder, and the spreading area is increased by 5% compared with that of Sn0.7Cu solder. It is also revealed that the growth rate of the interfacial intermetallic compound (IMC) is compressed and the IMC grain size is increased during soldering reaction. With the increase of soldering time, the IMC morphology evolves gradually from scallop-shaped to serration-shaped, and the IMC which dissolves or fractures into the solder bulk is observed.
{"title":"Effect of Ti on wettability and interface reaction of Sn0.7Cu lead-free solder","authors":"G. Wei, D. Luo, H. Gao, Guanghui He","doi":"10.1109/ISAPM.2011.6105723","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105723","url":null,"abstract":"The effect of adding Ti in Sn0.7Cu lead-free solder on the wettability and interfacial reaction between the solder and Cu substrate was investigated. The results show that the wettability can be improved by adding Ti in Sn0.7Cu solder, and the spreading area is increased by 5% compared with that of Sn0.7Cu solder. It is also revealed that the growth rate of the interfacial intermetallic compound (IMC) is compressed and the IMC grain size is increased during soldering reaction. With the increase of soldering time, the IMC morphology evolves gradually from scallop-shaped to serration-shaped, and the IMC which dissolves or fractures into the solder bulk is observed.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77778042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105670
Xiao Hong, Yun Huang, Shajin Li
With the development of the RF/microwave technology, more and more GaAs PHEMT device is used and the power of the device is also increasing. However, the test of thermal performance and heat dissipation in packaging device is still a prominent problem. In order to obtain steady operation and longer lifetime, what is the highest temperature environment the device can work? Also the package of the device is a major factor of cooling effect, so the measurement of thermal resistance must be accurate. In this paper, some methods was given to measuring of device junction temperature. Traditional test method such as infrared thermography is not work for the packaging device. A new method to measure the thermal resistance of GaAs PHEMT is given. Based on the electrical measurement method for thermal resistance and Schottky junction temperature of GaAs PHEMT and the factors which influence measuring results are investigated. In the meantime we design the setup of the test system for the measuring. The first is drawing the curve of forward voltage changes and temperature. Then the thermal resistance is measured and calculated. The error introduced by thermal resistance of GaAs PHEMT surface is eliminated. The experimental results show that the method has the advantages of simple structure and good stability. The proposed method is capable to evaluate the thermal resistance of the packaging device such as GaN device, VDMOS and so on. It is very significant to provide evaluation method in reliability test.
{"title":"A study of junction temperature testing method in GaAs PHEMT","authors":"Xiao Hong, Yun Huang, Shajin Li","doi":"10.1109/ISAPM.2011.6105670","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105670","url":null,"abstract":"With the development of the RF/microwave technology, more and more GaAs PHEMT device is used and the power of the device is also increasing. However, the test of thermal performance and heat dissipation in packaging device is still a prominent problem. In order to obtain steady operation and longer lifetime, what is the highest temperature environment the device can work? Also the package of the device is a major factor of cooling effect, so the measurement of thermal resistance must be accurate. In this paper, some methods was given to measuring of device junction temperature. Traditional test method such as infrared thermography is not work for the packaging device. A new method to measure the thermal resistance of GaAs PHEMT is given. Based on the electrical measurement method for thermal resistance and Schottky junction temperature of GaAs PHEMT and the factors which influence measuring results are investigated. In the meantime we design the setup of the test system for the measuring. The first is drawing the curve of forward voltage changes and temperature. Then the thermal resistance is measured and calculated. The error introduced by thermal resistance of GaAs PHEMT surface is eliminated. The experimental results show that the method has the advantages of simple structure and good stability. The proposed method is capable to evaluate the thermal resistance of the packaging device such as GaN device, VDMOS and so on. It is very significant to provide evaluation method in reliability test.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82680360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105743
F. Song, Xian-long Feng, S. Li, Shi-ji Yu
Influence of weld technology on reliability and life to cathode in vacuum tube was studied by requests of microwave tube. The quality of weld technology quite affects the emission capability of cathode. The mode of weld quite affects thermal efficiency of cathode in vacuum tube. Thermal efficiency of cathode can increase availably by changing the weld technology on the heat transfer path. Thermal analysis and optimization design of cathode module for vacuum tube was carried out with the FEM in order to obtain required cathode temperature with lower heat power. The weld mode quite affects the cathode heat power, for example, the cathode heat power can reduce 28.6% with 8+8 laser spot welding. We have also built the life test system of TWT's electron gun structure of 8+8 laser spot welding, using this life test system, up to 30 years life of cathode is forecasted.
{"title":"Weld technology reliability analysis of cathode in vacuum tube","authors":"F. Song, Xian-long Feng, S. Li, Shi-ji Yu","doi":"10.1109/ISAPM.2011.6105743","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105743","url":null,"abstract":"Influence of weld technology on reliability and life to cathode in vacuum tube was studied by requests of microwave tube. The quality of weld technology quite affects the emission capability of cathode. The mode of weld quite affects thermal efficiency of cathode in vacuum tube. Thermal efficiency of cathode can increase availably by changing the weld technology on the heat transfer path. Thermal analysis and optimization design of cathode module for vacuum tube was carried out with the FEM in order to obtain required cathode temperature with lower heat power. The weld mode quite affects the cathode heat power, for example, the cathode heat power can reduce 28.6% with 8+8 laser spot welding. We have also built the life test system of TWT's electron gun structure of 8+8 laser spot welding, using this life test system, up to 30 years life of cathode is forecasted.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89498554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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