Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105679
Yanqiu Li, Zheng Chen, Liangliang Li, J. Cai
The noise suppressors based on ferromagnetic nanowire arrays were fabricated on the anodic aluminum oxide templates (AAO), and the effects of the width and length of the device and the type of the ferromagnetic nanowire array on the microwave properties of the noise suppressor were investigated. The Co and Co-Ni magnetic nanowires with an average diameter of 200 nm and a length of 10 or 30 μm were electrodeposited in the AAO templates, and the ultrasonic vibration was utilized to promote ionic diffusion and to allow hydrogen to escape easily from the cathode. Scanning electron microscope images showed uniform ferromagnetic nanowires and the hysteresis loops demonstrated that these nanowire arrays had a strong magnetic anisotropy. The resonance frequency of S21 of the noise suppressors reached 25 GHz, indicating that the working frequency of the devices was beyond 20 GHz. The synthetic method of the ferromagnetic nanowires and the fabrication processes of the devices in this work could be applied to other microwave devices such as isolators and circulators. Key words: noise suppressor, S-parameter, ferromagnetic nanowires
{"title":"20 Gigahertz noise suppressor based on ferromagnetic nanowire arrays","authors":"Yanqiu Li, Zheng Chen, Liangliang Li, J. Cai","doi":"10.1109/ISAPM.2011.6105679","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105679","url":null,"abstract":"The noise suppressors based on ferromagnetic nanowire arrays were fabricated on the anodic aluminum oxide templates (AAO), and the effects of the width and length of the device and the type of the ferromagnetic nanowire array on the microwave properties of the noise suppressor were investigated. The Co and Co-Ni magnetic nanowires with an average diameter of 200 nm and a length of 10 or 30 μm were electrodeposited in the AAO templates, and the ultrasonic vibration was utilized to promote ionic diffusion and to allow hydrogen to escape easily from the cathode. Scanning electron microscope images showed uniform ferromagnetic nanowires and the hysteresis loops demonstrated that these nanowire arrays had a strong magnetic anisotropy. The resonance frequency of S21 of the noise suppressors reached 25 GHz, indicating that the working frequency of the devices was beyond 20 GHz. The synthetic method of the ferromagnetic nanowires and the fabrication processes of the devices in this work could be applied to other microwave devices such as isolators and circulators. Key words: noise suppressor, S-parameter, ferromagnetic nanowires","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82177703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105745
D. Gui, D. Si, B. Chen, J. Li, X. Yu
Isocyanate-terminated polydimethylsiloxane (ITPDMS) was synthesized by the reaction of Hydroxyl-terminated polydimethylsiloxane (HTPDMS) with Toluene diisocyanate (TDI) and was used to modify epoxy resin (Diglycidyl ether of bisphenol A epoxy resin (DGEBA)). The chemical structure of ITPDMS and ITPDMS/ER was characterized by FTIR. The morphology of fracture surfaces of the ITPDMS/ER cured samples were studied by SEM and the thermal analysis was carried out via TGA. The modified epoxy resin shows biphasic toughness fracture morphology and 5∼6 °C improvement in thermal stability over unmodified epoxy resin with brittle fracture morphology. The mechanical properties were investigated by universal testing machine and DMA. The results show that the modified epoxy resin has better mechanical properties with tensile strength, bending strength and elongation increased by 6.76%, 5.05% and 11.84% respectively than unmodified epoxy resin.
{"title":"Isocyanate-terminated polydimethylsiloxane-modified epoxy resin: Preparation and curing, characterization and mechanical properties","authors":"D. Gui, D. Si, B. Chen, J. Li, X. Yu","doi":"10.1109/ISAPM.2011.6105745","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105745","url":null,"abstract":"Isocyanate-terminated polydimethylsiloxane (ITPDMS) was synthesized by the reaction of Hydroxyl-terminated polydimethylsiloxane (HTPDMS) with Toluene diisocyanate (TDI) and was used to modify epoxy resin (Diglycidyl ether of bisphenol A epoxy resin (DGEBA)). The chemical structure of ITPDMS and ITPDMS/ER was characterized by FTIR. The morphology of fracture surfaces of the ITPDMS/ER cured samples were studied by SEM and the thermal analysis was carried out via TGA. The modified epoxy resin shows biphasic toughness fracture morphology and 5∼6 °C improvement in thermal stability over unmodified epoxy resin with brittle fracture morphology. The mechanical properties were investigated by universal testing machine and DMA. The results show that the modified epoxy resin has better mechanical properties with tensile strength, bending strength and elongation increased by 6.76%, 5.05% and 11.84% respectively than unmodified epoxy resin.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89314001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105689
Yisen Lin, Z. Xiong, L. Hong, H. Xue, Laura Chen
A series of Ce3+, Mn2+ codoped BaxSryLizSiO4:Ce3+, Mn2+ phosphors were synthesized by partially liquid-phase method. The effects of Ba/Sr ratio, Ce/Mn ratio and lithium content on the emission spectra of the BaxSryLizSiO4:Ce3+, Mn2+ (BSLS:Ce, Mn) phosphors were investigated in details, which showed blue emission around 410nm wavelength and red emission at about 620nm wavelength, respectively. With the increasing of Sr/Ba ratio, the color of BSLS:Ce, Mn was changed from orange to red. However, the intensity of blue emission was reduced and red emission was enhanced with an incensement of Mn/Ce ratio. The strongest intensity of emission for the phosphor was obtained at Li content of 15 mol%.
{"title":"Photoluminescence properties of BaxSryLizSiO4:Ce3+, Mn2+ phosphors for NUV-LED lighting","authors":"Yisen Lin, Z. Xiong, L. Hong, H. Xue, Laura Chen","doi":"10.1109/ISAPM.2011.6105689","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105689","url":null,"abstract":"A series of Ce<sup>3+</sup>, Mn<sup>2+</sup> codoped Ba<inf>x</inf>Sr<inf>y</inf>Li<inf>z</inf>SiO<inf>4</inf>:Ce<sup>3+</sup>, Mn<sup>2+</sup> phosphors were synthesized by partially liquid-phase method. The effects of Ba/Sr ratio, Ce/Mn ratio and lithium content on the emission spectra of the Ba<inf>x</inf>Sr<inf>y</inf>Li<inf>z</inf>SiO<inf>4</inf>:Ce<sup>3+</sup>, Mn<sup>2+</sup> (BSLS:Ce, Mn) phosphors were investigated in details, which showed blue emission around 410nm wavelength and red emission at about 620nm wavelength, respectively. With the increasing of Sr/Ba ratio, the color of BSLS:Ce, Mn was changed from orange to red. However, the intensity of blue emission was reduced and red emission was enhanced with an incensement of Mn/Ce ratio. The strongest intensity of emission for the phosphor was obtained at Li content of 15 mol%.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82684224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105692
Xiaofei Lv, Libing Zheng, Xiangdong Kong, Pengyun Jin, Han Li
DBC (Direct bonding Copper) is the most common substrate of IGBT power module in recent years. The existence of voids between the copper and the ceramic is the main process defect. The temperature distribution is multiple because of the differences in the ratio and location of the voids. In this paper, the integration of the test and numerical simulation is used to research the temperature distribution of DBC with different ratios of voids and loads. The results show that the location of the voids between the copper and the ceramic influence the temperature distribution of DBC clearly.
{"title":"The research of relationship between the void of DBC and the temperature distribution","authors":"Xiaofei Lv, Libing Zheng, Xiangdong Kong, Pengyun Jin, Han Li","doi":"10.1109/ISAPM.2011.6105692","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105692","url":null,"abstract":"DBC (Direct bonding Copper) is the most common substrate of IGBT power module in recent years. The existence of voids between the copper and the ceramic is the main process defect. The temperature distribution is multiple because of the differences in the ratio and location of the voids. In this paper, the integration of the test and numerical simulation is used to research the temperature distribution of DBC with different ratios of voids and loads. The results show that the location of the voids between the copper and the ceramic influence the temperature distribution of DBC clearly.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90421124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105736
Xibing Zhan, T. Jin, Junying Zhang, Jue Cheng
In recent years, with the rapid development of large scale integrated circuit and micro-packaging technology, the electronic components and devices tend to be high miniaturization and intensity. The heat dissipation of electronic components has become more crucial to the overall system because it affects the lifetime, performance and reliability of electronic device[1]. According to survey, the reliability of electronic components decrease by10% with the temperature increase by 2°C[2]. Heat dissipation from microelectronics is most commonly performed by thermal conduction. For this purpose, most of metal materials are used due to their good thermal conductivity, but they have some disadvantages, such as high density, complicated processing technology and poor resistance to corrosion[3]. So many researchers direct their interest to the study of thermal conductive adhesives (TCAs). As we all know, polymer matrix have low heat conductivity, so how to improve the thermal conductivity of TCAs has aroused more and more researcher's attention. In this paper, the thermal conducting mechanism and heat transfer model were introduced. In addition, it's demonstrated in detail that the recent research advances in heat conductive adhesive in the field of fixation and packaging of electronic devices. And then the factors affecting thermal conductivity and methods of enhancing thermal conducting were presented, such as exploiting new filler, modifying the surface of filler and optimizing the technological conditions. Meanwhile, the direction of further development of thermal conductive adhesive in the field of electronics was pointed out.
{"title":"Progress on thermally conductive adhesive for electronic packaging","authors":"Xibing Zhan, T. Jin, Junying Zhang, Jue Cheng","doi":"10.1109/ISAPM.2011.6105736","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105736","url":null,"abstract":"In recent years, with the rapid development of large scale integrated circuit and micro-packaging technology, the electronic components and devices tend to be high miniaturization and intensity. The heat dissipation of electronic components has become more crucial to the overall system because it affects the lifetime, performance and reliability of electronic device[1]. According to survey, the reliability of electronic components decrease by10% with the temperature increase by 2°C[2]. Heat dissipation from microelectronics is most commonly performed by thermal conduction. For this purpose, most of metal materials are used due to their good thermal conductivity, but they have some disadvantages, such as high density, complicated processing technology and poor resistance to corrosion[3]. So many researchers direct their interest to the study of thermal conductive adhesives (TCAs). As we all know, polymer matrix have low heat conductivity, so how to improve the thermal conductivity of TCAs has aroused more and more researcher's attention. In this paper, the thermal conducting mechanism and heat transfer model were introduced. In addition, it's demonstrated in detail that the recent research advances in heat conductive adhesive in the field of fixation and packaging of electronic devices. And then the factors affecting thermal conductivity and methods of enhancing thermal conducting were presented, such as exploiting new filler, modifying the surface of filler and optimizing the technological conditions. Meanwhile, the direction of further development of thermal conductive adhesive in the field of electronics was pointed out.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84985500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105713
M. Cai, Daoguo Yang, Y. Tao, Cassie Su, Boyi Wu, Zaifu Cui
I-type ferrite inductors are prone to cracking easily after undergoing cooling and heating cycles. It is necessary to work out a method to improve reliability of the device, even if the cracking does not damage the device directly. In this paper, one failure case on product line is investigated deeply by combining finite element analysis, environmental tests and failure analysis methods. Analysis results show the internal fillet radius R of the inductor affects the stress distribution directly. When the radius size gets smaller, the stress is more concentrated, and the cracking occurs easily. The key stress will decrease by 60–90Mpa when R increases from 0.02mm to 0.7mm, which will greatly improve the reliability of the device. Moreover, the results also show the filler material of the inductor is one of key factors of improving cracking phenomenon. So it can improve the stress distribution to select the optimal filler material. To optimize the entire device, it is necessary to use the existing optimization design method of multivariate nonlinear to synthetically optimize parameters of various materials and size parameters of the device and to find out the best materials and sizes that are suitable for the current process.
{"title":"Investigation on cracked inductors based on finite element analysis","authors":"M. Cai, Daoguo Yang, Y. Tao, Cassie Su, Boyi Wu, Zaifu Cui","doi":"10.1109/ISAPM.2011.6105713","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105713","url":null,"abstract":"I-type ferrite inductors are prone to cracking easily after undergoing cooling and heating cycles. It is necessary to work out a method to improve reliability of the device, even if the cracking does not damage the device directly. In this paper, one failure case on product line is investigated deeply by combining finite element analysis, environmental tests and failure analysis methods. Analysis results show the internal fillet radius R of the inductor affects the stress distribution directly. When the radius size gets smaller, the stress is more concentrated, and the cracking occurs easily. The key stress will decrease by 60–90Mpa when R increases from 0.02mm to 0.7mm, which will greatly improve the reliability of the device. Moreover, the results also show the filler material of the inductor is one of key factors of improving cracking phenomenon. So it can improve the stress distribution to select the optimal filler material. To optimize the entire device, it is necessary to use the existing optimization design method of multivariate nonlinear to synthetically optimize parameters of various materials and size parameters of the device and to find out the best materials and sizes that are suitable for the current process.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86364112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105717
F. Yang, L. Liu, M. Huang
Nowadays, with electronic products tending to become shorter, smaller, lighter, and thinner, solder balls used to join chips and substrates are also downsizing. This may have an adverse effect on the reliability of electronic products. The focus of this study is on the effect of solder volume on the interfacial reactions between Sn-3.5Ag, Sn-3.0Ag-0.5Cu lead-free solder balls and electroless nickel electroless palladium immersion gold (ENEPIG) pads on printed circuit board (PCB) after various reflows. The diameters of solder balls were 200, 300, 400 and 500 μm, respectively. In the interfacial reaction between Sn-3.5Ag solder balls and ENEPIG pads, as the diameters of the solder balls changed, obvious changes in Ni3Sn4 intermetallic compound (IMC) morphologies and thickness were not found. We attribute this phenomenon to the limited Ni concentration in the solder. When a small amount of Cu was added into Sn-Ag lead-free solder, changes in type, morphology and growth kinetics of interfacial IMCs occurred. In the case of Sn-3.0Ag-0.5Cu/ENEPIG reaction, volume effect in the form of IMC type transition occurred. Only (Ni, Cu)3Sn4 IMCs with morphologies of needle and chunk shape were observed at the interface of 200 μm solder ball. Interestingly, chunk type (Ni, Cu)3Sn4 IMCs co-existed with the octahedron-type (Cu, Ni)6Sn5 IMCs at the interface between Ni-P layer and 300 μm solder ball. And in the case of 400 μm and 500 μm solder balls, only (Cu, Ni)6Sn5 IMCs in the needle-type shape were formed at the interface. This phenomenon was related to the absolute Cu content in the solder which was changed with solder volume.
{"title":"Comparative study on interfacial reactions between Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder balls and ENEPIG pad after multiple reflows","authors":"F. Yang, L. Liu, M. Huang","doi":"10.1109/ISAPM.2011.6105717","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105717","url":null,"abstract":"Nowadays, with electronic products tending to become shorter, smaller, lighter, and thinner, solder balls used to join chips and substrates are also downsizing. This may have an adverse effect on the reliability of electronic products. The focus of this study is on the effect of solder volume on the interfacial reactions between Sn-3.5Ag, Sn-3.0Ag-0.5Cu lead-free solder balls and electroless nickel electroless palladium immersion gold (ENEPIG) pads on printed circuit board (PCB) after various reflows. The diameters of solder balls were 200, 300, 400 and 500 μm, respectively. In the interfacial reaction between Sn-3.5Ag solder balls and ENEPIG pads, as the diameters of the solder balls changed, obvious changes in Ni3Sn4 intermetallic compound (IMC) morphologies and thickness were not found. We attribute this phenomenon to the limited Ni concentration in the solder. When a small amount of Cu was added into Sn-Ag lead-free solder, changes in type, morphology and growth kinetics of interfacial IMCs occurred. In the case of Sn-3.0Ag-0.5Cu/ENEPIG reaction, volume effect in the form of IMC type transition occurred. Only (Ni, Cu)3Sn4 IMCs with morphologies of needle and chunk shape were observed at the interface of 200 μm solder ball. Interestingly, chunk type (Ni, Cu)3Sn4 IMCs co-existed with the octahedron-type (Cu, Ni)6Sn5 IMCs at the interface between Ni-P layer and 300 μm solder ball. And in the case of 400 μm and 500 μm solder balls, only (Cu, Ni)6Sn5 IMCs in the needle-type shape were formed at the interface. This phenomenon was related to the absolute Cu content in the solder which was changed with solder volume.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76941118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105727
B. An, L. Ding, Techun Wang, T. Lu, Yiping Wu
Copper wire bonding on pre-plated leadframe (PPF) is an ever-increasing mode of interconnection in electronic packaging to substitute the gold wire bonding in the volume production in the forthcoming years. Reliability from copper wire bonding should however be well known before putting the process into manufacturing. In this letter, the 4N copper wire with 50 μm diameter bonded on PPF substrate was investigated. It was found for some samples that due to the work hardening effect of the copper, low bonding strength in the heel of the 2nd bond between the copper wire and the PPF surface was noticeable. An anneal process was introduced to recover the microstructural weakness, and wire pull tests revealed that it remarkably enhanced the bond strength of the 2nd joint. Interfacial crystallization characteristics have shown the difference between the 1st and the 2nd bonds which were attributed to hot forming and cold forming respectively.
{"title":"Annealing effect and crystallization characteristics of copper wire bonding on pre-plated leadframe","authors":"B. An, L. Ding, Techun Wang, T. Lu, Yiping Wu","doi":"10.1109/ISAPM.2011.6105727","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105727","url":null,"abstract":"Copper wire bonding on pre-plated leadframe (PPF) is an ever-increasing mode of interconnection in electronic packaging to substitute the gold wire bonding in the volume production in the forthcoming years. Reliability from copper wire bonding should however be well known before putting the process into manufacturing. In this letter, the 4N copper wire with 50 μm diameter bonded on PPF substrate was investigated. It was found for some samples that due to the work hardening effect of the copper, low bonding strength in the heel of the 2nd bond between the copper wire and the PPF surface was noticeable. An anneal process was introduced to recover the microstructural weakness, and wire pull tests revealed that it remarkably enhanced the bond strength of the 2nd joint. Interfacial crystallization characteristics have shown the difference between the 1st and the 2nd bonds which were attributed to hot forming and cold forming respectively.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79818478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105729
Shen Wei, Pu Yu-ping, Zhao Peng, Zhu Li-ran
Due to lighter, stiffer and offer superior heat-sinking than traditional packaging materials, Si-Al alloys have been proved as novel materials used for packaging microwave hybrid circuitry. In the current paper, finite element geometric models based on the real microstructural images of 40Si-Al are generated. Furthermore, based on Fourier's law for heat conduction and thermal expansion equation, thermal properties including the thermal conductivity and the coefficient of thermal expansion (CTE) of 40Si-Al are quantified by finite element method (FEM). By means of statistical method in conjunction with FEM results, the thermal conductivity and CTE at room temperature are calculated, respectively. The numerical simulation result agrees with the corresponding experimental result, which shows that the methodology developed in this paper is efficient in calculating thermal properties of Si-Al alloys.
{"title":"Finite element simulation of thermal properties of 40Si-Al alloys for electronics packaging","authors":"Shen Wei, Pu Yu-ping, Zhao Peng, Zhu Li-ran","doi":"10.1109/ISAPM.2011.6105729","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105729","url":null,"abstract":"Due to lighter, stiffer and offer superior heat-sinking than traditional packaging materials, Si-Al alloys have been proved as novel materials used for packaging microwave hybrid circuitry. In the current paper, finite element geometric models based on the real microstructural images of 40Si-Al are generated. Furthermore, based on Fourier's law for heat conduction and thermal expansion equation, thermal properties including the thermal conductivity and the coefficient of thermal expansion (CTE) of 40Si-Al are quantified by finite element method (FEM). By means of statistical method in conjunction with FEM results, the thermal conductivity and CTE at room temperature are calculated, respectively. The numerical simulation result agrees with the corresponding experimental result, which shows that the methodology developed in this paper is efficient in calculating thermal properties of Si-Al alloys.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76833308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105706
G. Gong, Li Li, Wei Liu, M. Song, Xue-Song Xu, D.H. Ye, J. Yao
In this paper, micro-corrosion of Al/Cu/W bond pad was studied. During DI water cleaning process, theta phase Al2Cu and surrounding Al performed well as typical galvanic cell, resulting in pad metal micro-corrosion. DI water with Pb2+ is thought to be outside electrical path of the galvanic cell. It is firmly believed that Pb-contained particles on top of Al2Cu and surrounding Al oxide and/or hydroxide were the cathodic and anodic reaction product respectively.
{"title":"Characterization of Al/Cu/W bond pad micro-corrosion","authors":"G. Gong, Li Li, Wei Liu, M. Song, Xue-Song Xu, D.H. Ye, J. Yao","doi":"10.1109/ISAPM.2011.6105706","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105706","url":null,"abstract":"In this paper, micro-corrosion of Al/Cu/W bond pad was studied. During DI water cleaning process, theta phase Al2Cu and surrounding Al performed well as typical galvanic cell, resulting in pad metal micro-corrosion. DI water with Pb2+ is thought to be outside electrical path of the galvanic cell. It is firmly believed that Pb-contained particles on top of Al2Cu and surrounding Al oxide and/or hydroxide were the cathodic and anodic reaction product respectively.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73067040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：