Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105738
Bin Zhou, Xueli Qi
The miniaturization of packaging volume for hybrid microcircuit and the increasing of dissipated power for chip make its junction case thermal resistance parameters become the focus of people's study and attention. The thermal resistance sample was designed based on a new embedded copper enhance case and static measurement was used, transient temperature response curve of internal die was showed by testing, thermal resistance — heat capacity network model was obtained through numerical deconvolution, the thermal resistance of internal structures were analyzed, which was compared with the theory calculation result of 45° method, and the effect of each layer structure on overall junction case thermal resistance was analyzed. In addition, heat dissipation performance was studied by comparative analysis between new case and original cold rolled steel case. Finally, temperature distribution and junction case thermal resistance of new hybrid circuit module were studied by finite element simulation. The results showed that the thermal resistance value of new embedded copper packaging case decreased about 50% in contrast to cold rolled steel case. Decreasing overall internal resistance of microcircuit need improves the heat dissipation performance of case, meanwhile, the effect of each layer structure on whole internal thermal resistance should be decreased as much as possible.
{"title":"Static thermal resistance test and simulation analysis technology for hybrid microcircuit","authors":"Bin Zhou, Xueli Qi","doi":"10.1109/ISAPM.2011.6105738","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105738","url":null,"abstract":"The miniaturization of packaging volume for hybrid microcircuit and the increasing of dissipated power for chip make its junction case thermal resistance parameters become the focus of people's study and attention. The thermal resistance sample was designed based on a new embedded copper enhance case and static measurement was used, transient temperature response curve of internal die was showed by testing, thermal resistance — heat capacity network model was obtained through numerical deconvolution, the thermal resistance of internal structures were analyzed, which was compared with the theory calculation result of 45° method, and the effect of each layer structure on overall junction case thermal resistance was analyzed. In addition, heat dissipation performance was studied by comparative analysis between new case and original cold rolled steel case. Finally, temperature distribution and junction case thermal resistance of new hybrid circuit module were studied by finite element simulation. The results showed that the thermal resistance value of new embedded copper packaging case decreased about 50% in contrast to cold rolled steel case. Decreasing overall internal resistance of microcircuit need improves the heat dissipation performance of case, meanwhile, the effect of each layer structure on whole internal thermal resistance should be decreased as much as possible.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91244254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105675
Jinmei Liu, Yuan Yuan, Junhua Luo, Jinzhong Yao
CMOS 90 wafers had been applied to BGA (Ball Grid Array) packages for many years. However, the application to lead package is not much. This paper introduced one application for CMOS 90 wafers to LQFP (Low profile Quad Flat Package). Simultaneously, it is for automotive application and need meet AEC Grade 1 reliability requirements [1]. Low alpha green compound is required for this package to reduce the SER (soft error rate) for electrical robustness. The package is 64 lead LQFP and silver is ring plated for the lead tips. At the beginning, the lead tip delamination was observed after TC (Temperature Cycle) through cross section analysis and SEM check. Pre mold plasma evaluation with Ar/H2 was also tried, but it couldn't remove the delamination. Then mechanical simulation was performed and confirmed that stresses are focused on the tips of the lead which will greatly affect the EMC adhesion. Finally, the compound was optimized by using the high adhesion type of coupling agent to improve the compound adhesion with silver and the lead tip delamination was successfully removed. As a result, the CMOS 90 LQFP package achieved the AEC Grade 1 reliability requirements and passed qualification for production.
{"title":"Low alpha green compound development for CMOS 90 LQFP automotive product","authors":"Jinmei Liu, Yuan Yuan, Junhua Luo, Jinzhong Yao","doi":"10.1109/ISAPM.2011.6105675","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105675","url":null,"abstract":"CMOS 90 wafers had been applied to BGA (Ball Grid Array) packages for many years. However, the application to lead package is not much. This paper introduced one application for CMOS 90 wafers to LQFP (Low profile Quad Flat Package). Simultaneously, it is for automotive application and need meet AEC Grade 1 reliability requirements [1]. Low alpha green compound is required for this package to reduce the SER (soft error rate) for electrical robustness. The package is 64 lead LQFP and silver is ring plated for the lead tips. At the beginning, the lead tip delamination was observed after TC (Temperature Cycle) through cross section analysis and SEM check. Pre mold plasma evaluation with Ar/H2 was also tried, but it couldn't remove the delamination. Then mechanical simulation was performed and confirmed that stresses are focused on the tips of the lead which will greatly affect the EMC adhesion. Finally, the compound was optimized by using the high adhesion type of coupling agent to improve the compound adhesion with silver and the lead tip delamination was successfully removed. As a result, the CMOS 90 LQFP package achieved the AEC Grade 1 reliability requirements and passed qualification for production.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76214143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105691
Tian Wen-chao, Wang Hongming
The large-displacement, low-voltage and fast response are the research direction of the micro actuator. The micro actuator of the electrostatic transverse loading exist problems of the oversized voltage or undersized displacement. The model of a large-displacement low-voltage micro actuator is presented based on the principle of the vertically-horizontally bending. The elastic force is transformed from the restoring force to the driving force. The deflection equation of the micro beam is derived. The simulation shows that the displacement is as big as 145μm; the driving voltage is as low as 5V. The displacement and driving voltage are superior to the current micro actuator performance.
{"title":"Static analysis of a large-displacement low-voltage micro actuator","authors":"Tian Wen-chao, Wang Hongming","doi":"10.1109/ISAPM.2011.6105691","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105691","url":null,"abstract":"The large-displacement, low-voltage and fast response are the research direction of the micro actuator. The micro actuator of the electrostatic transverse loading exist problems of the oversized voltage or undersized displacement. The model of a large-displacement low-voltage micro actuator is presented based on the principle of the vertically-horizontally bending. The elastic force is transformed from the restoring force to the driving force. The deflection equation of the micro beam is derived. The simulation shows that the displacement is as big as 145μm; the driving voltage is as low as 5V. The displacement and driving voltage are superior to the current micro actuator performance.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79594944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105704
N. Unami, H. Noma, K. Sakuma, A. Shigetou, S. Shoji, J. Mizuno
We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O3 and/or formic acid treatment is about twice that of a bump with no treatment.
{"title":"Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment","authors":"N. Unami, H. Noma, K. Sakuma, A. Shigetou, S. Shoji, J. Mizuno","doi":"10.1109/ISAPM.2011.6105704","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105704","url":null,"abstract":"We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O3 and/or formic acid treatment is about twice that of a bump with no treatment.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83073600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105711
B. An, G. Gu, Wenfei Zhang, Yiping Wu
A precise creep tester was established to in situ measure the micro strain of the solder under different temperatures and certain loads. The ball grid array samples with the diameter of 0.76 mm Sn-3Ag-0.5Cu (SAC305) solder bumps were tested under the shear strength ranged from 7 MPa up to 14 MPa and the heating temperatures from 24°C up to 100°C. Creep constitutive equation of the steady-state creep, together with its stress exponent n, creep activation energy Q and structure constant A were determined by employing the power law creep. The coarsening Ag3Sn particles were observed with the temperature rising up under a certain load.
{"title":"Shear creep behavior of Sn-3Ag-0.5Cu solder bumps in ball grid array","authors":"B. An, G. Gu, Wenfei Zhang, Yiping Wu","doi":"10.1109/ISAPM.2011.6105711","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105711","url":null,"abstract":"A precise creep tester was established to in situ measure the micro strain of the solder under different temperatures and certain loads. The ball grid array samples with the diameter of 0.76 mm Sn-3Ag-0.5Cu (SAC305) solder bumps were tested under the shear strength ranged from 7 MPa up to 14 MPa and the heating temperatures from 24°C up to 100°C. Creep constitutive equation of the steady-state creep, together with its stress exponent n, creep activation energy Q and structure constant A were determined by employing the power law creep. The coarsening Ag3Sn particles were observed with the temperature rising up under a certain load.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83473288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105687
Shuxian Chen, Z. Xiong, Helan Ye, Xiaopeng Dong
An optical glucose biosensor was fabricated by encapsulating glucose oxidase in TEOS-derived gel film along with Ru(bpy)3Cl2 as an luminescent oxygen transducer, for determining the concentration of glucose in the blood and urine samples. When the oxidation reaction of glucose by glucose oxidase occurred, an increase in the fluorescence intensity of Ru(bpy)3Cl2 was observed due to the oxygen consumption. A good response performance to glucose was exhibited for the biosensor with a wide linear range from 2.0 to 18.0mM, R=0.997. The detection limit of the biosensor was estimated to be 0.368mM, with response time < 50s. There was no apparent interference for the biosensor with fructose, urea and ascorbic acid. In addition, the enzymatic activity and long-term stability were also discussed in details.
{"title":"An optical glucose biosensor fabricated by encapsulating glucose oxidase in silica gel via sol-gel method","authors":"Shuxian Chen, Z. Xiong, Helan Ye, Xiaopeng Dong","doi":"10.1109/ISAPM.2011.6105687","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105687","url":null,"abstract":"An optical glucose biosensor was fabricated by encapsulating glucose oxidase in TEOS-derived gel film along with Ru(bpy)3Cl2 as an luminescent oxygen transducer, for determining the concentration of glucose in the blood and urine samples. When the oxidation reaction of glucose by glucose oxidase occurred, an increase in the fluorescence intensity of Ru(bpy)3Cl2 was observed due to the oxygen consumption. A good response performance to glucose was exhibited for the biosensor with a wide linear range from 2.0 to 18.0mM, R=0.997. The detection limit of the biosensor was estimated to be 0.368mM, with response time < 50s. There was no apparent interference for the biosensor with fructose, urea and ascorbic acid. In addition, the enzymatic activity and long-term stability were also discussed in details.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78750754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105726
Zhiwen Chen, B. An, Yiping Wu, Changqing Liu, R. Parkin
The compressive creep deformation of SAC305/copper solder joints is tested at 12.739MPa and different temperatures ranging from 343K to 463K. The experimental results were analyzedby curve fitting with time hardening model incorporated in Abaqus™. The influence of intermetallic compounds on compressive creep deformation was also studied by modeling with the parameters of time hardening model which were derived from curve fitting. The modeling results show that deformability of the solders descends sharply at all temperatures, from 343K to 463K, as the volume ratio of intermetallic compounds layer increases. But the distribution of deformation is much more homogeneous, and the deformability of solders becomes similar at different temperatures when the ratio of IMCs is relatively higher.
{"title":"An investigation of the influence of intermetallic compounds on compressivecreep of SAC305/copper solder joints by modeling","authors":"Zhiwen Chen, B. An, Yiping Wu, Changqing Liu, R. Parkin","doi":"10.1109/ISAPM.2011.6105726","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105726","url":null,"abstract":"The compressive creep deformation of SAC305/copper solder joints is tested at 12.739MPa and different temperatures ranging from 343K to 463K. The experimental results were analyzedby curve fitting with time hardening model incorporated in Abaqus™. The influence of intermetallic compounds on compressive creep deformation was also studied by modeling with the parameters of time hardening model which were derived from curve fitting. The modeling results show that deformability of the solders descends sharply at all temperatures, from 343K to 463K, as the volume ratio of intermetallic compounds layer increases. But the distribution of deformation is much more homogeneous, and the deformability of solders becomes similar at different temperatures when the ratio of IMCs is relatively higher.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84037633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105710
Cuiping Wang, Jian Wang, Juan Wang, Liang Chen, Xingjun Liu
In this work, an activator system used for no-rosin lead-free solder paste was prepared by compounding with 5-Sulposalicylic acid dehydrate and an organic which restrains the over-quick release of the activator. The composition of the active system was studied by thermal gravimetric analysis. Additional, characterizations of the solder paste with various formula such as viscosity, wettability and shelf life have been evaluated. The solder paste performs the best wettability, the lowest residue, and improved shelf life when the weight percentage of 5-Sulposalicylic acid dehydrate to activity control agent is 20 to 47 in the activity system,.
{"title":"Characteristics of a new non-rosin, lead-free solder paste activity system","authors":"Cuiping Wang, Jian Wang, Juan Wang, Liang Chen, Xingjun Liu","doi":"10.1109/ISAPM.2011.6105710","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105710","url":null,"abstract":"In this work, an activator system used for no-rosin lead-free solder paste was prepared by compounding with 5-Sulposalicylic acid dehydrate and an organic which restrains the over-quick release of the activator. The composition of the active system was studied by thermal gravimetric analysis. Additional, characterizations of the solder paste with various formula such as viscosity, wettability and shelf life have been evaluated. The solder paste performs the best wettability, the lowest residue, and improved shelf life when the weight percentage of 5-Sulposalicylic acid dehydrate to activity control agent is 20 to 47 in the activity system,.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91028864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105708
Xiaomei Sun, F. Sun, Yang Liu
In this study, two kinds of microscale solder joints, Sn-0.3Cu/Cu and Sn-0.5Cu/Cu, were studied. The element diffusion behavior at the soldering interface was investigated as the bulk solder size various from 5μm to 100μm during HTS (High Temperature Storage) aging. Experimental results indicated that the size and shape of solder joints have a significant effect on the element concentrations at the interface and the growth rate of interfacial IMC. With the decrease of the geometrical size of the bulk solder in Sn-Cu/Cu microscale solder joint, the concentration of interface element changed obviously until the bulk solder have been exhausted. Cu concentration in the solder near interface decrease when the volume of bulk solder increased. Therefore, at the the microscale concentration distribution of diffusion elements were influenced by the geometric size of microscale solder joints, which should be considered in reliability design of microscale solder joints.
{"title":"Geometrical size effect on interfacial diffusion of solder joint","authors":"Xiaomei Sun, F. Sun, Yang Liu","doi":"10.1109/ISAPM.2011.6105708","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105708","url":null,"abstract":"In this study, two kinds of microscale solder joints, Sn-0.3Cu/Cu and Sn-0.5Cu/Cu, were studied. The element diffusion behavior at the soldering interface was investigated as the bulk solder size various from 5μm to 100μm during HTS (High Temperature Storage) aging. Experimental results indicated that the size and shape of solder joints have a significant effect on the element concentrations at the interface and the growth rate of interfacial IMC. With the decrease of the geometrical size of the bulk solder in Sn-Cu/Cu microscale solder joint, the concentration of interface element changed obviously until the bulk solder have been exhausted. Cu concentration in the solder near interface decrease when the volume of bulk solder increased. Therefore, at the the microscale concentration distribution of diffusion elements were influenced by the geometric size of microscale solder joints, which should be considered in reliability design of microscale solder joints.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82000009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105712
Jibing Chen, B. An, Cong Li, Wei Guo, Yiping Wu
The thermal fatigue behavior of the solder joint treated by electromagnetic induced heating is investigated in the present study. The microstructures and compositions of solder joints were observed and analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray system (EDXS) respectively. An approach to rapid thermal cycles by high-frequency electromagnetic induction heating was also presented in terms of numerical simulation. It was found that rapid thermal cycle has an evident influence on the microstructure and IMC between SAC305 solder and Cu substrate. The results showed that there is a rimous cracks phenomenon in the microstructure of the solder balls after rapid thermal cycle. The results indicate that this method by local induction heating is feasible to investigate the thermal fatigue behaviors of solder joint. This method can also effectively improve the reliability of the electronic packaging devices.
{"title":"Electromagnetic induced heating for rapid thermal cycling of single SnAgCu solder joint in double substrates","authors":"Jibing Chen, B. An, Cong Li, Wei Guo, Yiping Wu","doi":"10.1109/ISAPM.2011.6105712","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105712","url":null,"abstract":"The thermal fatigue behavior of the solder joint treated by electromagnetic induced heating is investigated in the present study. The microstructures and compositions of solder joints were observed and analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray system (EDXS) respectively. An approach to rapid thermal cycles by high-frequency electromagnetic induction heating was also presented in terms of numerical simulation. It was found that rapid thermal cycle has an evident influence on the microstructure and IMC between SAC305 solder and Cu substrate. The results showed that there is a rimous cracks phenomenon in the microstructure of the solder balls after rapid thermal cycle. The results indicate that this method by local induction heating is feasible to investigate the thermal fatigue behaviors of solder joint. This method can also effectively improve the reliability of the electronic packaging devices.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81571759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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