Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105751
Bin Du, Xiong-hui Cai, Jiaqi Hu, Ling Wang, Hongqin Wang, Meiling Deng, Lijiao He, Chao Wan
To explore the effect of two different latent curing agents on the performance of anisotropic conductive adhesive (ACA), two adhesive with different latent curing agents (ACA1 and ACA2) were prepared and flexible radio frequency identification (RFID) tag inlays were assembled with them through flip chip technology. Curing profile and thermal stability of the pastes, microstructures and the bonding strength of ACA bonding joints, room temperature and hot humidity storage capacity of inlays were studied. It was found that the type of curing agent had much effect on the performance of ACAs. The ACA using B as the latent curing agent (ACA2) had lower curing peak temperature although it had lower Tg and smaller curing rate than the former (ACA1). After it cured there was less air bubbles in the resin. And it had better bonding strength and anti hot-humidity capacity than the former from other tests. This was important to the reliability of product. Thus, as a whole, latent curing agent B is more suitable to prepare the paste to assemble the flexible RFID tag inlays.
{"title":"The effect of two different latent curing agents on the performance of anisotropic conductive adhesives","authors":"Bin Du, Xiong-hui Cai, Jiaqi Hu, Ling Wang, Hongqin Wang, Meiling Deng, Lijiao He, Chao Wan","doi":"10.1109/ISAPM.2011.6105751","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105751","url":null,"abstract":"To explore the effect of two different latent curing agents on the performance of anisotropic conductive adhesive (ACA), two adhesive with different latent curing agents (ACA1 and ACA2) were prepared and flexible radio frequency identification (RFID) tag inlays were assembled with them through flip chip technology. Curing profile and thermal stability of the pastes, microstructures and the bonding strength of ACA bonding joints, room temperature and hot humidity storage capacity of inlays were studied. It was found that the type of curing agent had much effect on the performance of ACAs. The ACA using B as the latent curing agent (ACA2) had lower curing peak temperature although it had lower Tg and smaller curing rate than the former (ACA1). After it cured there was less air bubbles in the resin. And it had better bonding strength and anti hot-humidity capacity than the former from other tests. This was important to the reliability of product. Thus, as a whole, latent curing agent B is more suitable to prepare the paste to assemble the flexible RFID tag inlays.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"25 1","pages":"450-455"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78735490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105714
Pengfei Zou, F. Sun, Yang Liu
The effects of Ni element on the morphology of intermetallic compounds and some mechanical properties of SAC-Bi-XNi/Cu lead-free solder joints have been investigated. The corresponding mechanical and reliability behaviors were evaluated by performing shear test, fracture mode analysis, nanoindentation experiments and measurement of IMC before and after isothermal aging 200h and 400h at 160°C. The results indicated that with increasing the content of Ni (0∼0.15 wt %), hardness of solder increased, shear strength of solder joints and modulus of elasticity of solder increased and then decreased. SAC-Bi-0.1Ni lead-free solder showed the largest shear strength and Young's modulus. The fracture dimples in SAC-Bi-0.1Ni solder joints were less than other three solders. The thickness of IMC increased originally and then decreased after reflowing, which was thinnest in SAC-Bi-0.05Ni/Cu solder joint. Ni apparently refined the grains of IMC.
{"title":"Effect of Ni on the morphology of IMC and mechanical properties of SAC-Bi-Ni/Cu joints","authors":"Pengfei Zou, F. Sun, Yang Liu","doi":"10.1109/ISAPM.2011.6105714","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105714","url":null,"abstract":"The effects of Ni element on the morphology of intermetallic compounds and some mechanical properties of SAC-Bi-XNi/Cu lead-free solder joints have been investigated. The corresponding mechanical and reliability behaviors were evaluated by performing shear test, fracture mode analysis, nanoindentation experiments and measurement of IMC before and after isothermal aging 200h and 400h at 160°C. The results indicated that with increasing the content of Ni (0∼0.15 wt %), hardness of solder increased, shear strength of solder joints and modulus of elasticity of solder increased and then decreased. SAC-Bi-0.1Ni lead-free solder showed the largest shear strength and Young's modulus. The fracture dimples in SAC-Bi-0.1Ni solder joints were less than other three solders. The thickness of IMC increased originally and then decreased after reflowing, which was thinnest in SAC-Bi-0.05Ni/Cu solder joint. Ni apparently refined the grains of IMC.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"14 1","pages":"267-271"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90980708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105677
H. Liao, F. Zhu, Sheng Liu
When one-dimensional single atom chain was placed at the center of single wall carbon nano-tube (SWCNT) along the axis, and using the molecular dynamics simulation, the mechanical strength of a single-walled could be obtained in terms of the stress-strain curve. At this temperature of 0K, the ultimate stress of a SWCNT with one-dimensional single atom chain was higher than that of a SWCNT without this chain structure, and the result was reverse at 300K. With regard to the rupture of SWCNT, it can be observed that the SWCNT without single atom chain yielded more easily than the decorated SWCNT. The rupture of SWCNT was initiated at the location of distortion, which was introduced by thermal fluctuation and the interference of metal atoms. With the temperature rising, the SWCNT with or without atom Ni will be more likely to fracture. At last, for investigating the influence of increasing atom chains on the mechanical properties of the SWCNT, multi atom chains structure was also used in implementing the same simulation.
{"title":"Mechanical stretching behavior simulation of SWCNT and SWCNT-Ni","authors":"H. Liao, F. Zhu, Sheng Liu","doi":"10.1109/ISAPM.2011.6105677","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105677","url":null,"abstract":"When one-dimensional single atom chain was placed at the center of single wall carbon nano-tube (SWCNT) along the axis, and using the molecular dynamics simulation, the mechanical strength of a single-walled could be obtained in terms of the stress-strain curve. At this temperature of 0K, the ultimate stress of a SWCNT with one-dimensional single atom chain was higher than that of a SWCNT without this chain structure, and the result was reverse at 300K. With regard to the rupture of SWCNT, it can be observed that the SWCNT without single atom chain yielded more easily than the decorated SWCNT. The rupture of SWCNT was initiated at the location of distortion, which was introduced by thermal fluctuation and the interference of metal atoms. With the temperature rising, the SWCNT with or without atom Ni will be more likely to fracture. At last, for investigating the influence of increasing atom chains on the mechanical properties of the SWCNT, multi atom chains structure was also used in implementing the same simulation.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"12 1","pages":"85-90"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87806274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105709
Cuiping Wang, Jian Wang, Liang Chen, Yuechan Li, Xingjun Liu
The wettability and corrosiveness of some organic acids were tested to choose an appropriate activator. Then orthogonal design method was used to determine the proportion among the components of the activator. At last a certain amount of water-white rosin was added to further optimize the dispensation. The final soldering flux for Sn-0.7Cu welding wire caters to the demands of welding process such as good weld ability, good liquidity, less smoke, full and shiny welding spot.
{"title":"Study on soldering flux used for Sn-0.7Cu welding wire","authors":"Cuiping Wang, Jian Wang, Liang Chen, Yuechan Li, Xingjun Liu","doi":"10.1109/ISAPM.2011.6105709","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105709","url":null,"abstract":"The wettability and corrosiveness of some organic acids were tested to choose an appropriate activator. Then orthogonal design method was used to determine the proportion among the components of the activator. At last a certain amount of water-white rosin was added to further optimize the dispensation. The final soldering flux for Sn-0.7Cu welding wire caters to the demands of welding process such as good weld ability, good liquidity, less smoke, full and shiny welding spot.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"2 1","pages":"246-249"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83606810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105721
G. Wei, D. Luo, Lei Shi, Guanghui He
The effects of multiple reflows and thermal shock on interfacial reaction of the solder joints between Sn-0.3Ag-0.7Cu solder/pads (HASL, OSP, electrolytic Ni/Au and ENIG PCB finishes) were systematically investigated in this work. The results showed that the scallop Cu6Sn5 phase were formed in HASL and OSP finish pads during reflows, whereas the cylinder-type (Cu, Ni)6Sn5 near the solder and needle-type (Ni, Cu)3Sn4 adjacent to the Ni layer were formed in electrolytic Ni/Au and ENIG finish pads. For all the four kinds of finishes, the thickness of IMCs increased with reflow times increasing, and the interfacial IMCs growth was controlled by grain boundary diffusion; the growth rate at Cu surface was faster than at Ni surface. Furthermore, it was also indicated that the interfacial IMCs growth were not notable with thermal shock cycle numbers increasing, but Kirkendall voids could be observed in the Sn-Cu-Ni intermetallic compounds layer for electrolytic Ni/Au and ENIG Finish Under thermal shock tests.
{"title":"Influence of multiple reflows and thermal shock on interfacial IMC of solder joints between Sn0.3Ag0.7Cu solder/pads(HASL, OSP, electrolytic Ni/Au and ENIG PCB finishes)","authors":"G. Wei, D. Luo, Lei Shi, Guanghui He","doi":"10.1109/ISAPM.2011.6105721","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105721","url":null,"abstract":"The effects of multiple reflows and thermal shock on interfacial reaction of the solder joints between Sn-0.3Ag-0.7Cu solder/pads (HASL, OSP, electrolytic Ni/Au and ENIG PCB finishes) were systematically investigated in this work. The results showed that the scallop Cu6Sn5 phase were formed in HASL and OSP finish pads during reflows, whereas the cylinder-type (Cu, Ni)6Sn5 near the solder and needle-type (Ni, Cu)3Sn4 adjacent to the Ni layer were formed in electrolytic Ni/Au and ENIG finish pads. For all the four kinds of finishes, the thickness of IMCs increased with reflow times increasing, and the interfacial IMCs growth was controlled by grain boundary diffusion; the growth rate at Cu surface was faster than at Ni surface. Furthermore, it was also indicated that the interfacial IMCs growth were not notable with thermal shock cycle numbers increasing, but Kirkendall voids could be observed in the Sn-Cu-Ni intermetallic compounds layer for electrolytic Ni/Au and ENIG Finish Under thermal shock tests.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"23 1","pages":"302-307"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79589570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105703
X. Liu, Techun Wang, Yuqi Cong, Jiaji Wang
Cu wire is the alternative material to the Au wire in many aspects, such as better electrical and thermal conductivity, higher mechanical strength and its lower cost for the high volume manufacture. Due to the surface oxidation of the Cu wire, the Pd-plated Cu wire (Pd-Cu wire) has been adopted quickly in many fine pitch and high density package devices. Cu wire bonding has been well understood in recent years, while Pd-Cu wire is still under intense investigation. Here we present a study on the interface of the stitch bonding by TEM analysis. Our experiments were performed on 1 mil (∼25um) Pd-Cu wire bonding with Ag plated leadframes under the 5% Hydrogen forming gases. The Pd coating thickness of the Cu wire was about 100nm, while the thickness of the lead-frame's Ag coating was about 6um. The leadframes were subjected to pre-heating treatments at 200°C in normal, 5 minutes extended and 20 minutes extended condition, total 3 samples, in order to investigate whether it will form oxide material on surface of the lead-frames and degenerate the bondability. The research tried to understand the underlying microscopic mechanism of the stitch bonding interface by means of micro-topography and elements distribution analysis. The samples for TEM examination were prepared by specific manual grinding followed by FIB micro-machining. No oxide layer or Oxygen gathering region was found at the interfaces of three samples by TEM topography. The results indicated that the existing Pd coating at the Cu wire surface was able to prevent Cu from being oxidized, and the surface of the lead-frames also showed no oxygen gathering. A thin “dark” Pd layer at the interface of three samples between copper and silver layers was observed by TEM with EDX, and the peak value of the Pd at the interface was about 40 atomic %. The thickness of the Pd layer was about 30nm which was much thinner than the original coating thickness. It indicated Pd coating has been seriously deformed during the bonding process. Each element (Cu, Pd, and Ag) at the interface had low interdiffusion rates under the pre-heating temperature (200°C) from the analysis of the abrupt elements distribution curves. It was observed that the content of the Cu in Ag coating was varying for the three samples. When the pre-heated time of the lead-frame increased at 200°C, the content of the Cu in Ag coatings increased from 10% to 20% and then to 30%. The details of Pd layer microstructure and topography need further investigation with improved analytical means.
铜线在许多方面都是金线的替代材料，如更好的导电性和导热性，更高的机械强度和更低的成本，适合大批量生产。由于铜线的表面氧化，镀钯铜线(Pd-Cu线)在许多细间距和高密度封装器件中得到了迅速的应用。近年来，人们对铜线的键合已经有了很好的了解，而钯铜线的键合仍处于研究的火热阶段。本文用透射电镜分析方法研究了针缝结合界面。我们的实验是在5%的氢气形成气体下，在1 mil (~ 25um)的Pd-Cu线与镀银引线框结合进行的。Cu线的Pd涂层厚度约为100nm，引线框架的Ag涂层厚度约为6um。在正常、延长5分钟和延长20分钟的条件下，共3个样品进行200℃的预热处理，以研究是否会在引线框架表面形成氧化物质并降低其粘结性。本研究试图通过微观形貌和元素分布分析来了解针状结合界面的微观机制。采用特定的手工磨削和FIB微加工制备TEM检测样品。TEM形貌分析表明，三种试样的界面处均未发现氧化层和氧聚集区。结果表明，铜线表面的Pd涂层能够防止铜被氧化，铅框表面也没有氧聚集现象。透射电子显微镜(TEM)和电子能谱仪(EDX)观察到，在三种样品的铜层和银层之间的界面处有一层薄的“暗”钯层，界面处钯的峰值约为40原子%。Pd层厚度约为30nm，比原涂层厚度薄得多。表明Pd涂层在结合过程中发生了严重的变形。从元素突变分布曲线分析可知，在预热温度(200℃)下，Cu、Pd和Ag元素在界面处的互扩散速率较低。结果表明，三种样品的镀层中Cu的含量是不同的。在200℃下，随着引线框架预热时间的增加，Ag涂层中Cu的含量从10%增加到20%，再增加到30%。Pd层的微观结构和形貌细节有待改进的分析手段进一步研究。
{"title":"Study on interface of Pd-plated Cu wire stitch bonding","authors":"X. Liu, Techun Wang, Yuqi Cong, Jiaji Wang","doi":"10.1109/ISAPM.2011.6105703","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105703","url":null,"abstract":"Cu wire is the alternative material to the Au wire in many aspects, such as better electrical and thermal conductivity, higher mechanical strength and its lower cost for the high volume manufacture. Due to the surface oxidation of the Cu wire, the Pd-plated Cu wire (Pd-Cu wire) has been adopted quickly in many fine pitch and high density package devices. Cu wire bonding has been well understood in recent years, while Pd-Cu wire is still under intense investigation. Here we present a study on the interface of the stitch bonding by TEM analysis. Our experiments were performed on 1 mil (∼25um) Pd-Cu wire bonding with Ag plated leadframes under the 5% Hydrogen forming gases. The Pd coating thickness of the Cu wire was about 100nm, while the thickness of the lead-frame's Ag coating was about 6um. The leadframes were subjected to pre-heating treatments at 200°C in normal, 5 minutes extended and 20 minutes extended condition, total 3 samples, in order to investigate whether it will form oxide material on surface of the lead-frames and degenerate the bondability. The research tried to understand the underlying microscopic mechanism of the stitch bonding interface by means of micro-topography and elements distribution analysis. The samples for TEM examination were prepared by specific manual grinding followed by FIB micro-machining. No oxide layer or Oxygen gathering region was found at the interfaces of three samples by TEM topography. The results indicated that the existing Pd coating at the Cu wire surface was able to prevent Cu from being oxidized, and the surface of the lead-frames also showed no oxygen gathering. A thin “dark” Pd layer at the interface of three samples between copper and silver layers was observed by TEM with EDX, and the peak value of the Pd at the interface was about 40 atomic %. The thickness of the Pd layer was about 30nm which was much thinner than the original coating thickness. It indicated Pd coating has been seriously deformed during the bonding process. Each element (Cu, Pd, and Ag) at the interface had low interdiffusion rates under the pre-heating temperature (200°C) from the analysis of the abrupt elements distribution curves. It was observed that the content of the Cu in Ag coating was varying for the three samples. When the pre-heated time of the lead-frame increased at 200°C, the content of the Cu in Ag coatings increased from 10% to 20% and then to 30%. The details of Pd layer microstructure and topography need further investigation with improved analytical means.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"69 1","pages":"213-219"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90678873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105718
Zhao Yongrui, Ma Hongbo, Bi Minglu, Huang Zhanwu, Jia Jun, Lai Xin-quan
A novel small-sized chip circuit auxiliary layer (SCCAL) multipurpose 3D package process in order to solve the problem of shortages in flexibility and diversity of the traditional through-silicon via (TSV) process is presented in this paper. It meets the requirement of large amount of silicon dies which need connecting together by TSV technology but were designed respectively that wafers were processed without via holes drilling. This process involves a small-sized chip circuit auxiliary layer which is used as a carrying base and connecting auxiliary layer. Also, an improved TSV technology is involved that via holes could be produced through the PADs in the silicon dies. It is verified that, the whole process time of 3D packaging process is shortened drastically and the flexibility of the 3D packaging is greatly improved.
{"title":"Multipurpose quick 3D packaging process","authors":"Zhao Yongrui, Ma Hongbo, Bi Minglu, Huang Zhanwu, Jia Jun, Lai Xin-quan","doi":"10.1109/ISAPM.2011.6105718","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105718","url":null,"abstract":"A novel small-sized chip circuit auxiliary layer (SCCAL) multipurpose 3D package process in order to solve the problem of shortages in flexibility and diversity of the traditional through-silicon via (TSV) process is presented in this paper. It meets the requirement of large amount of silicon dies which need connecting together by TSV technology but were designed respectively that wafers were processed without via holes drilling. This process involves a small-sized chip circuit auxiliary layer which is used as a carrying base and connecting auxiliary layer. Also, an improved TSV technology is involved that via holes could be produced through the PADs in the silicon dies. It is verified that, the whole process time of 3D packaging process is shortened drastically and the flexibility of the 3D packaging is greatly improved.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"13 1","pages":"287-290"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85969566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105669
Rong Yu, Laura Chen, H. Xue, Z. Xiong
The composites of CaCu3Ti4O12-x(NaBi)0.5Cu3Ti4O12, i.e. CCTO-xNBCTO, were prepared for x value from 0 to 0.1. Ultrahigh dielectric constant, ε =7×105, and dielectric loss, tanδ = 0.48, of the composites with x=0.05 were obtained. The relations between crystal structures with XRD spectra and dielectric properties with LCR measurement were investigated, in which. An internal barrier layer capacitance effect is used to explain the mechanism of such dielectric behavior. The frequency dependence of the dielectric constant of CCTO-NBCTO composites were measured from 20Hz to 1MHz, showing that the loss tangent apparently decreased with the increase of frequency. The temperature dependence of both the dielectric constant and loss tangent of the samples were also obtained. It was found that the dielectric properties was almost independent of temperature in the range from −20°C to 80°C, however, the loss tangent were increased dramatically with a further increase in temperature, above 80°C.
{"title":"Preparation and dielectric properties of CaCu3Ti4O12-(NaBi)0.5Cu3Ti4O12 composites","authors":"Rong Yu, Laura Chen, H. Xue, Z. Xiong","doi":"10.1109/ISAPM.2011.6105669","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105669","url":null,"abstract":"The composites of CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>-x(NaBi)<inf>0.5</inf>Cu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>, i.e. CCTO-xNBCTO, were prepared for x value from 0 to 0.1. Ultrahigh dielectric constant, ε =7×10<sup>5</sup>, and dielectric loss, tanδ = 0.48, of the composites with x=0.05 were obtained. The relations between crystal structures with XRD spectra and dielectric properties with LCR measurement were investigated, in which. An internal barrier layer capacitance effect is used to explain the mechanism of such dielectric behavior. The frequency dependence of the dielectric constant of CCTO-NBCTO composites were measured from 20Hz to 1MHz, showing that the loss tangent apparently decreased with the increase of frequency. The temperature dependence of both the dielectric constant and loss tangent of the samples were also obtained. It was found that the dielectric properties was almost independent of temperature in the range from −20°C to 80°C, however, the loss tangent were increased dramatically with a further increase in temperature, above 80°C.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"85 7 1","pages":"52-55"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87675462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105667
P. Hu, Z. Xiong, H. Xue, Jie Pan, Qingjun Lu, Xiaopeng Xiao
In this paper, green microfibers of barium titanate precursor were prepared by the combination of Sol-Gel processing and Gel-spinning technique. The piezoelectric microfibers of ceramic BaTiO3 were sintered, with diameter of 15μm and length of 20mm, respectively. Interdigitated electrodes were printed on an epoxy resin substrate. BaTiO3 microfibers were then aligned on the interdigitated electrodes and covered with the solution of epoxy resin, so as to obtain Inter-Digitated Electrodes Piezoelectric Fiber/polymer Composites, IDEPFC. The periodic output voltages with maximum value of 0.86V were obtained under harmonic excitation, by using a finger to apply a dynamic load on the top of the IDEPFC.
{"title":"BaTiO3 piezoelectric microfiber composites for mechanical energy harvesting","authors":"P. Hu, Z. Xiong, H. Xue, Jie Pan, Qingjun Lu, Xiaopeng Xiao","doi":"10.1109/ISAPM.2011.6105667","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105667","url":null,"abstract":"In this paper, green microfibers of barium titanate precursor were prepared by the combination of Sol-Gel processing and Gel-spinning technique. The piezoelectric microfibers of ceramic BaTiO3 were sintered, with diameter of 15μm and length of 20mm, respectively. Interdigitated electrodes were printed on an epoxy resin substrate. BaTiO3 microfibers were then aligned on the interdigitated electrodes and covered with the solution of epoxy resin, so as to obtain Inter-Digitated Electrodes Piezoelectric Fiber/polymer Composites, IDEPFC. The periodic output voltages with maximum value of 0.86V were obtained under harmonic excitation, by using a finger to apply a dynamic load on the top of the IDEPFC.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"35 1","pages":"43-46"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89230006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105668
Bai-Feng Han, D. Ding, Yanting Zhou, Yanping He, Yuzhao Liu, Ming Li, D. Mao
Co-Ni films are widely used in electronics industry for their excellent magnetic, mechanical and electrical properties. In this work, the influence of substrate type and deposition parameters on the morphologies of electroplating Co-Ni nanostructures was investigated. It was found that scallop shell-like Co-Ni depositions could be fabricated on copper wafers. The tendency to form the scallop shell-like depositions increased with increase of deposition time and current density. While on silicon wafers, scallop shell-like Co-Ni depositions could not form. Only acupuncture-like nanostructures could be fabricated on silicon wafers at a high current density.
{"title":"Electrodeposition of Co-Ni nanostructures","authors":"Bai-Feng Han, D. Ding, Yanting Zhou, Yanping He, Yuzhao Liu, Ming Li, D. Mao","doi":"10.1109/ISAPM.2011.6105668","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105668","url":null,"abstract":"Co-Ni films are widely used in electronics industry for their excellent magnetic, mechanical and electrical properties. In this work, the influence of substrate type and deposition parameters on the morphologies of electroplating Co-Ni nanostructures was investigated. It was found that scallop shell-like Co-Ni depositions could be fabricated on copper wafers. The tendency to form the scallop shell-like depositions increased with increase of deposition time and current density. While on silicon wafers, scallop shell-like Co-Ni depositions could not form. Only acupuncture-like nanostructures could be fabricated on silicon wafers at a high current density.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"129 11","pages":"47-51"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91549696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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