Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481352
D. Sharma, S. Vishvakarma
In this paper, we have analyzed for the first time that the body potential versus gate voltage characteristic curves for device having equal channel length but different body widths pass through a single common point called as `crossover point', for triple gate (TriG) MOSFET. We have found that at this crossover point, there is no potential drop from body center to the surface in the Si body. However, there is potential variation along the channel length. The value of crossover point increases with decreasing value of channel length for short channel devices. However, for long channel devices there is no such crossover point. Using the concept of crossover point, we have justified that in case of surface potential based definition, the threshold voltage changes anomalously with the body thickness variation for different channel lengths.
{"title":"Analysis of crossover point and threshold voltage for triple gate MOSFET","authors":"D. Sharma, S. Vishvakarma","doi":"10.1109/CDE.2013.6481352","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481352","url":null,"abstract":"In this paper, we have analyzed for the first time that the body potential versus gate voltage characteristic curves for device having equal channel length but different body widths pass through a single common point called as `crossover point', for triple gate (TriG) MOSFET. We have found that at this crossover point, there is no potential drop from body center to the surface in the Si body. However, there is potential variation along the channel length. The value of crossover point increases with decreasing value of channel length for short channel devices. However, for long channel devices there is no such crossover point. Using the concept of crossover point, we have justified that in case of surface potential based definition, the threshold voltage changes anomalously with the body thickness variation for different channel lengths.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"2016 1","pages":"99-102"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86321983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481411
R. Garcia-Hemansanz, E. García‐Hemme, D. Pastor, Á. Prado, I. Mártil, G. González-Díaz, J. Olea, Francisco J. Ferrer
Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
{"title":"Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells","authors":"R. Garcia-Hemansanz, E. García‐Hemme, D. Pastor, Á. Prado, I. Mártil, G. González-Díaz, J. Olea, Francisco J. Ferrer","doi":"10.1109/CDE.2013.6481411","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481411","url":null,"abstract":"Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"17 1","pages":"337-340"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82784543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481396
M. B. González, J. M. Rafí, O. Beldarrain, M. Zabala, F. Campabadal
In this work, a systematic study of the electrical characteristics of Al2O3 and HfO2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of pre-existing electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.
{"title":"Defect assessment and leakage control in atomic layer deposited Al2O3 and HfO2 dielectrics","authors":"M. B. González, J. M. Rafí, O. Beldarrain, M. Zabala, F. Campabadal","doi":"10.1109/CDE.2013.6481396","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481396","url":null,"abstract":"In this work, a systematic study of the electrical characteristics of Al2O3 and HfO2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of pre-existing electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"50 2","pages":"277-280"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91439889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481354
J. Gonzalez-Chavarri, I. Castro-Hurtado, G. Mandayo, E. Castaño
In this paper the direct growth of ZnO nanostructures onto a sensing device for benzene gas sensing is presented. This sensor consists in an alumina substrate with platinum interdigitated microelectrodes and a Pt heater. The nanostructure growth process is based on a vapor-liquid-solid method starting from a RF sputtered Zn thin film.
{"title":"Design and fabrication of sensor structures for the measurement of toxic gases","authors":"J. Gonzalez-Chavarri, I. Castro-Hurtado, G. Mandayo, E. Castaño","doi":"10.1109/CDE.2013.6481354","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481354","url":null,"abstract":"In this paper the direct growth of ZnO nanostructures onto a sensing device for benzene gas sensing is presented. This sensor consists in an alumina substrate with platinum interdigitated microelectrodes and a Pt heater. The nanostructure growth process is based on a vapor-liquid-solid method starting from a RF sputtered Zn thin film.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"78 1","pages":"107-110"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83884227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481379
I. Mahbub, M. S. Islam, S. Biswas
Four InGaN-delta InyGa1-yN Quantum Wells (QW) with four different values of y (1, 0.9, 0.8, 0.7) were investigated through the numerical solution of a k.p Hamiltonian with the Finite Difference Method (FDM). The spontaneous emission spectra and optical gain spectra of the four structures have been found to have a definite pattern where increasing the value of y gradually shifted the spectra toward the higher energy regions. The electron-hole ground state overlaps were not found to change by a great amount. Increasing y brought about a predictable shift of the spectra toward the higher energy regions at the expense of electron-hole wave function overlap.
{"title":"Peak emission wavelength tuning for Light Emitting Diodes and lasers for InGaN — deltaInyGa1−yN Quantum Well by varying the composition of the delta well","authors":"I. Mahbub, M. S. Islam, S. Biswas","doi":"10.1109/CDE.2013.6481379","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481379","url":null,"abstract":"Four InGaN-delta InyGa1-yN Quantum Wells (QW) with four different values of y (1, 0.9, 0.8, 0.7) were investigated through the numerical solution of a k.p Hamiltonian with the Finite Difference Method (FDM). The spontaneous emission spectra and optical gain spectra of the four structures have been found to have a definite pattern where increasing the value of y gradually shifted the spectra toward the higher energy regions. The electron-hole ground state overlaps were not found to change by a great amount. Increasing y brought about a predictable shift of the spectra toward the higher energy regions at the expense of electron-hole wave function overlap.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"21 1","pages":"207-210"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85707837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481401
G. González-Díaz, I. Mártil, A. del Prado, D. Pastor, E. García‐Hemme, R. García-Hernansanz, P. Wahnón, J. Olea
Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency.
{"title":"The Intermediate Band approach in the third solar cell generation context","authors":"G. González-Díaz, I. Mártil, A. del Prado, D. Pastor, E. García‐Hemme, R. García-Hernansanz, P. Wahnón, J. Olea","doi":"10.1109/CDE.2013.6481401","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481401","url":null,"abstract":"Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"112 1","pages":"297-300"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79623062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481420
A. Garcia-Rivera, E. Comesaña, A. García-Loureiro, R. Valin, J. Rodríguez, M. Vetter
In this paper the behaviour of the current density-voltage (J-V) characteristic curves of hydrogenated amorphous silicon (a-Si:H) tandem solar cells (a-Si:H/a-Si:H) with heavy doped tunnelling junction of hydrogenated microcrystalline silicon (JLc-Si:H) n±/p± is analysed. The multi-junction solar cells are being used as an alternative to single junction (SJ) solar cells trying to reduce the Staebler-Wronski Effect (SWE) and to increase the solar cell stability and efficiency. The dual-junction (DJ) solar cell is formed by a stack of two p-i-n a-Si:H solar cells (top and bottom solar cells) whose J-V characteristic curves are also studied. Important in this kind of device is an exact adjustment of the current generation in top and bottom cells since both cells are connected in series and therefore must generate the same short circuit current density (Jsc). The Jsc could present a miss-matching due to the different absorption of light in deeper parts of the device if the thickness of top and bottom cell are not well adjusted. Changing the relation between the thickness of the active layers of the tandem solar cell, the miss-matching in the Jsc value between top and bottom solar cells can be minimized. The here developed computer simulations of the electrical and optical properties of the tandem device will help us to get a better understanding of tandem solar cells in order to design in a future work multi-junction solar cells made of different materials.
{"title":"Simulation of a-Si:H dual junction solar cells","authors":"A. Garcia-Rivera, E. Comesaña, A. García-Loureiro, R. Valin, J. Rodríguez, M. Vetter","doi":"10.1109/CDE.2013.6481420","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481420","url":null,"abstract":"In this paper the behaviour of the current density-voltage (J-V) characteristic curves of hydrogenated amorphous silicon (a-Si:H) tandem solar cells (a-Si:H/a-Si:H) with heavy doped tunnelling junction of hydrogenated microcrystalline silicon (JLc-Si:H) n±/p± is analysed. The multi-junction solar cells are being used as an alternative to single junction (SJ) solar cells trying to reduce the Staebler-Wronski Effect (SWE) and to increase the solar cell stability and efficiency. The dual-junction (DJ) solar cell is formed by a stack of two p-i-n a-Si:H solar cells (top and bottom solar cells) whose J-V characteristic curves are also studied. Important in this kind of device is an exact adjustment of the current generation in top and bottom cells since both cells are connected in series and therefore must generate the same short circuit current density (Jsc). The Jsc could present a miss-matching due to the different absorption of light in deeper parts of the device if the thickness of top and bottom cell are not well adjusted. Changing the relation between the thickness of the active layers of the tandem solar cell, the miss-matching in the Jsc value between top and bottom solar cells can be minimized. The here developed computer simulations of the electrical and optical properties of the tandem device will help us to get a better understanding of tandem solar cells in order to design in a future work multi-junction solar cells made of different materials.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"7 1","pages":"373-376"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75278816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481405
E. Perez, H. García, H. Castán, S. Dueñas, L. Bailón, B. Moralejo, O. Martínez, J. Jiménez, V. Parra
Defects on mono-like and polycrystalline silicon solar cells are studied in depth. These defects are in the basis of the higher quantum efficiency of mono-like solar cells (~18%) with respect to polycrystalline ones (~16%). Using the thermal admittance spectroscopy technique we found that both of them have a deep level due to a Fe-B complex. Furthermore, the deep level in the first one (224meV) is shallower than in the second one (345meV). Shallower deep levels degrade less the efficiency on solar cells, so this characteristic of the deep level in the mono-like solar cells leads to a better results in efficiency.
{"title":"Deep level defects on mono-like and polycrystalline silicon solar cells","authors":"E. Perez, H. García, H. Castán, S. Dueñas, L. Bailón, B. Moralejo, O. Martínez, J. Jiménez, V. Parra","doi":"10.1109/CDE.2013.6481405","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481405","url":null,"abstract":"Defects on mono-like and polycrystalline silicon solar cells are studied in depth. These defects are in the basis of the higher quantum efficiency of mono-like solar cells (~18%) with respect to polycrystalline ones (~16%). Using the thermal admittance spectroscopy technique we found that both of them have a deep level due to a Fe-B complex. Furthermore, the deep level in the first one (224meV) is shallower than in the second one (345meV). Shallower deep levels degrade less the efficiency on solar cells, so this characteristic of the deep level in the mono-like solar cells leads to a better results in efficiency.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"15 4 1","pages":"313-316"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78637647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481357
A. Luque, J. M. Soto, F. Perdigones, C. Aracil, J. Quero
This paper presents the design and fabrication process of a microfluidic pump based on the electroosmotic effect, and demonstrates its working. The device is fabricated using a combination of standard PCB processing and SU-8 photolithography, using Flame Retardant 4 (FR4) as substrate, SU-8 as structural material to construct the microchannels and chambers, and copper to built the lines for the electrical connections. The fabrication materials provide an inexpensive device. The proposed pump is intended to be included in SU-8 microfluidic portable platforms as an impulsion device which provides a continuous flow rate. Preliminary experimental results show an electroosmotic effect at 60 V, providing a flow rate of 1 μL/min.
{"title":"Electroosmotic impulsion device for integration in PCB-MEMS","authors":"A. Luque, J. M. Soto, F. Perdigones, C. Aracil, J. Quero","doi":"10.1109/CDE.2013.6481357","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481357","url":null,"abstract":"This paper presents the design and fabrication process of a microfluidic pump based on the electroosmotic effect, and demonstrates its working. The device is fabricated using a combination of standard PCB processing and SU-8 photolithography, using Flame Retardant 4 (FR4) as substrate, SU-8 as structural material to construct the microchannels and chambers, and copper to built the lines for the electrical connections. The fabrication materials provide an inexpensive device. The proposed pump is intended to be included in SU-8 microfluidic portable platforms as an impulsion device which provides a continuous flow rate. Preliminary experimental results show an electroosmotic effect at 60 V, providing a flow rate of 1 μL/min.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"12 1","pages":"119-122"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80030662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481340
J. Banqueri, M. Carvajal, S. Martinez-Garcia, A. Palma, M. Vilches, A. Lallena
A study of the degradation of the subthreshold swing in a general-purpose pMOSFET is carried out to evaluate its use as a dosimetric parameter. Its reliability in terms of sensitivity, linearity, and reproducibility is experimentally tested and compared with the threshold voltage shift under gamma rays from a 60Co source up to 56 Gy, typical in radiotherapy treatments. The dependence of the subthreshold swing as a function of temperature is characterized and modeled as a mean for thermal compensation when used for dose measurement. Very promising results have been obtained for the subthreshold swing as a complementary dosimetric parameter to the threshold voltage for enhancing the confidence of dose verification systems based on MOSFETs.
{"title":"Subthreshold response of a MOSFET to radiation effects","authors":"J. Banqueri, M. Carvajal, S. Martinez-Garcia, A. Palma, M. Vilches, A. Lallena","doi":"10.1109/CDE.2013.6481340","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481340","url":null,"abstract":"A study of the degradation of the subthreshold swing in a general-purpose pMOSFET is carried out to evaluate its use as a dosimetric parameter. Its reliability in terms of sensitivity, linearity, and reproducibility is experimentally tested and compared with the threshold voltage shift under gamma rays from a 60Co source up to 56 Gy, typical in radiotherapy treatments. The dependence of the subthreshold swing as a function of temperature is characterized and modeled as a mean for thermal compensation when used for dose measurement. Very promising results have been obtained for the subthreshold swing as a complementary dosimetric parameter to the threshold voltage for enhancing the confidence of dose verification systems based on MOSFETs.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"35 1","pages":"51-54"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77310568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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