Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481386
A. Herrera, Y. Jato
One of the industry sectors with the largest revenue in the telecommunication field is the wireless communications field. Wireless operators try to offer products that fulfill the user demands in terms of price, battery life and product quality. All these requirements must be also fulfilled by the designer of the MMIC (Microwave Monolithic Integrated Circuits) circuits that will be used in those wireless terminals, achieving a reliable design, with high performance, low cost and if possible in one or two foundry iterations so as to bring the product out to the market as soon as possible. Silicon based technologies are the lowest cost ones. These technologies don't include some essential components for the design of RF circuits, which leads to measurement results quite different from those simulated. The deep study of the problems presented when designing Si based RF circuits recommends the use of electromagnetic simulation or coo-simulation tools. The paper shows different simulation techniques that help the designer to obtain better designs with a lower cost, as well as reduced foundry iterations.
{"title":"Improving Yield on RF-CMOS ICs","authors":"A. Herrera, Y. Jato","doi":"10.1109/CDE.2013.6481386","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481386","url":null,"abstract":"One of the industry sectors with the largest revenue in the telecommunication field is the wireless communications field. Wireless operators try to offer products that fulfill the user demands in terms of price, battery life and product quality. All these requirements must be also fulfilled by the designer of the MMIC (Microwave Monolithic Integrated Circuits) circuits that will be used in those wireless terminals, achieving a reliable design, with high performance, low cost and if possible in one or two foundry iterations so as to bring the product out to the market as soon as possible. Silicon based technologies are the lowest cost ones. These technologies don't include some essential components for the design of RF circuits, which leads to measurement results quite different from those simulated. The deep study of the problems presented when designing Si based RF circuits recommends the use of electromagnetic simulation or coo-simulation tools. The paper shows different simulation techniques that help the designer to obtain better designs with a lower cost, as well as reduced foundry iterations.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"21 1","pages":"237-240"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90076708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481397
A. Crespo-Yepes, J. Martín-Martínez, V. Iglesias, R. Rodríguez, M. Porti, M. Nafría, X. Aymerich, M. Lanza
Some high-k dielectric materials show two interchangeable conductivity states (a High Resistive State, HRS, and Low Resistive State, LRS) in what is known as Resistive Switching (RS), being the basis of ReRAMs. In this work, the Resistive Switching (RS) phenomenon is studied on ultrathin Hf based high-k dielectrics at the nanoscale, by using the conductive atomic force microscopy (CAFM), and at device level. The CAFM allows analysing the local dielectric properties of the RS phenomenon. At device level, the temperature dependence of the RS-related gate currents during the HRS and LRS has been studied in MOSFETs.
{"title":"Nanoscale and device level analysis of the resistive switching phenomenon in ultra-thin high-k gate dielectrics","authors":"A. Crespo-Yepes, J. Martín-Martínez, V. Iglesias, R. Rodríguez, M. Porti, M. Nafría, X. Aymerich, M. Lanza","doi":"10.1109/CDE.2013.6481397","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481397","url":null,"abstract":"Some high-k dielectric materials show two interchangeable conductivity states (a High Resistive State, HRS, and Low Resistive State, LRS) in what is known as Resistive Switching (RS), being the basis of ReRAMs. In this work, the Resistive Switching (RS) phenomenon is studied on ultrathin Hf based high-k dielectrics at the nanoscale, by using the conductive atomic force microscopy (CAFM), and at device level. The CAFM allows analysing the local dielectric properties of the RS phenomenon. At device level, the temperature dependence of the RS-related gate currents during the HRS and LRS has been studied in MOSFETs.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"62 1","pages":"281-284"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85893507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481339
A. Castro-Carranza, M. Cheralathan, B. Iñíguez, J. Pallarès, C. Valla, F. Poullet, G. Depeyrot, M. Estrada
In this work we present the process entailed to implement a model for organic thin-film transistors (OTFTs): from the development of the complete model, to its validation and use in a circuit simulator. For this purpose the current-voltage model (UMEM) and its related charge and capacitance model for OTFTs (UBCM) were applied. The complete model is valid in the sub- and above-threshold regimes, and it is continuous in the transition from linear to saturation conditions. UMEM and UBCCM in Verilog-A are used with the SMASH circuit simulator for the analysis of the DC, small signal and transient behavior of OTFT circuits, and are compared with experimental data showing a good agreement.
{"title":"OTFT modeling: Development and implementation in EDA tools","authors":"A. Castro-Carranza, M. Cheralathan, B. Iñíguez, J. Pallarès, C. Valla, F. Poullet, G. Depeyrot, M. Estrada","doi":"10.1109/CDE.2013.6481339","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481339","url":null,"abstract":"In this work we present the process entailed to implement a model for organic thin-film transistors (OTFTs): from the development of the complete model, to its validation and use in a circuit simulator. For this purpose the current-voltage model (UMEM) and its related charge and capacitance model for OTFTs (UBCM) were applied. The complete model is valid in the sub- and above-threshold regimes, and it is continuous in the transition from linear to saturation conditions. UMEM and UBCCM in Verilog-A are used with the SMASH circuit simulator for the analysis of the DC, small signal and transient behavior of OTFT circuits, and are compared with experimental data showing a good agreement.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"11 1","pages":"49-50"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86149841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481358
F. J. Delgado, J. Quero, J. Garcia, C. L. Tarrida, J. M. Moreno, A. G. Saez, P. Ortega
The design, manufacturing and calibration of an improved miniaturized two axis sun sensor for satellite attitude control will be shown. The high precision is obtained by the subdivision of the field of view (FOV). The FOV and the resolution obtained are ±60° and 0.5° for the coarse measure and ±6° with precision better than 0.05° for the fine measure.
{"title":"SENSOSOL: MultiFOV 4-Quadrant high precision sun sensor for satellite attitude control","authors":"F. J. Delgado, J. Quero, J. Garcia, C. L. Tarrida, J. M. Moreno, A. G. Saez, P. Ortega","doi":"10.1109/CDE.2013.6481358","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481358","url":null,"abstract":"The design, manufacturing and calibration of an improved miniaturized two axis sun sensor for satellite attitude control will be shown. The high precision is obtained by the subdivision of the field of view (FOV). The FOV and the resolution obtained are ±60° and 0.5° for the coarse measure and ±6° with precision better than 0.05° for the fine measure.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"5 1","pages":"123-126"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87069363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481328
M. Pampillón, P. C. Feijoo, E. Andrés, J. Fierro
Gadolinium oxide thin films were deposited on Si by sputtering a metallic gadolinium target at high pressure followed by an in situ plasma oxidation. Different metal deposition times with the same oxidation conditions were studied. The deposition conditions were analyzed by means of glow discharge optical spectroscopy. The oxide films were characterized by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy and Fourier transform infrared spectroscopy. The films resulted stoichiometric and amorphous. Metal-insulator-semiconductor structures were fabricated with two different metal gates: titanium and platinum. The devices were measured before and after temperature treatments in a forming gas atmosphere. The Ti gated devices scavenge the SiOx interlayer while the Pt ones show no metal reaction.
{"title":"Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric","authors":"M. Pampillón, P. C. Feijoo, E. Andrés, J. Fierro","doi":"10.1109/CDE.2013.6481328","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481328","url":null,"abstract":"Gadolinium oxide thin films were deposited on Si by sputtering a metallic gadolinium target at high pressure followed by an in situ plasma oxidation. Different metal deposition times with the same oxidation conditions were studied. The deposition conditions were analyzed by means of glow discharge optical spectroscopy. The oxide films were characterized by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy and Fourier transform infrared spectroscopy. The films resulted stoichiometric and amorphous. Metal-insulator-semiconductor structures were fabricated with two different metal gates: titanium and platinum. The devices were measured before and after temperature treatments in a forming gas atmosphere. The Ti gated devices scavenge the SiOx interlayer while the Pt ones show no metal reaction.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"214 1","pages":"5-8"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76978950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481342
J. Garcia, M. J. Martín, R. Rengel
In this paper a particle-based Monte Carlo research of the static performance of double gate Schottky barrier MOSFETs is presented. As the devices simulated have extremely reduced sizes, space quantization phenomena appear within the channel. For describing this effect the effective potential approach is considered. Several static quantities are studied in order to characterize the effects of the inclusion of a second gate in this kind of devices. Besides, the consequences of a drastic reduction of the devices' active layer thickness are also experimented. Results demonstrate that disregarding quantum phenomena leads to a distortion of the electron density profiles and to an overestimation of the current which flows within the devices. The inclusion of a second gate in these devices provokes the growth of the drain current. However, the decrease of the active layer thickness attenuates the drive currents, even though, the tunnel injection current, comparatively, grows.
{"title":"Space quantization effects in double gate SB-MOSFETs: Role of the active layer thickness","authors":"J. Garcia, M. J. Martín, R. Rengel","doi":"10.1109/CDE.2013.6481342","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481342","url":null,"abstract":"In this paper a particle-based Monte Carlo research of the static performance of double gate Schottky barrier MOSFETs is presented. As the devices simulated have extremely reduced sizes, space quantization phenomena appear within the channel. For describing this effect the effective potential approach is considered. Several static quantities are studied in order to characterize the effects of the inclusion of a second gate in this kind of devices. Besides, the consequences of a drastic reduction of the devices' active layer thickness are also experimented. Results demonstrate that disregarding quantum phenomena leads to a distortion of the electron density profiles and to an overestimation of the current which flows within the devices. The inclusion of a second gate in these devices provokes the growth of the drain current. However, the decrease of the active layer thickness attenuates the drive currents, even though, the tunnel injection current, comparatively, grows.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"36 1","pages":"59-62"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78044228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481353
I. Gràcia, S. Vallejos, R. Cumeras, M. Salleras, E. Figueras, J. Santander, N. Sabaté, J. Esquivel, C. Calaza, L. Fonseca, C. Cané
The needs of the Agrofood sector in terms of fast and low cost analytical devices and systems and the capabilities of the Micro and Nano Technologies are reviewed and main R&D activity carried out in the last years is referenced. Despite the Food sector is very conservative in terms of introducing new technologies in their standard analysis procedures, it is expected that in the near future, sensors and Micro and Nano technologies can play an important role in commercial products.
{"title":"Sensors and Micro and Nano Technologies for the Food Sector","authors":"I. Gràcia, S. Vallejos, R. Cumeras, M. Salleras, E. Figueras, J. Santander, N. Sabaté, J. Esquivel, C. Calaza, L. Fonseca, C. Cané","doi":"10.1109/CDE.2013.6481353","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481353","url":null,"abstract":"The needs of the Agrofood sector in terms of fast and low cost analytical devices and systems and the capabilities of the Micro and Nano Technologies are reviewed and main R&D activity carried out in the last years is referenced. Despite the Food sector is very conservative in terms of introducing new technologies in their standard analysis procedures, it is expected that in the near future, sensors and Micro and Nano technologies can play an important role in commercial products.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"11 1","pages":"103-106"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89678373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481408
E. N. Astorga, E. Martinez, J. Barrado
A low cost spray-coating technique is implemented to study the boron diffusion in n-type silicon wafers. Temperature and diffusion time have been the main factors on the resulting sheet resistance (Rsheet), reaching the highest values at high temperatures and diffusion times due to the formation of a thick borosilicate glass layer on the wafer surface. This layer has been etched off by HF dipping resulting on more doped emitters. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) measurements have been carried out in order to analyze the correlation of Rsheet with the amount of sprayed precursor.
{"title":"Low cost spray-coating boron diffusion on n-type silicon","authors":"E. N. Astorga, E. Martinez, J. Barrado","doi":"10.1109/CDE.2013.6481408","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481408","url":null,"abstract":"A low cost spray-coating technique is implemented to study the boron diffusion in n-type silicon wafers. Temperature and diffusion time have been the main factors on the resulting sheet resistance (Rsheet), reaching the highest values at high temperatures and diffusion times due to the formation of a thick borosilicate glass layer on the wafer surface. This layer has been etched off by HF dipping resulting on more doped emitters. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) measurements have been carried out in order to analyze the correlation of Rsheet with the amount of sprayed precursor.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"30 1","pages":"325-328"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87104594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481388
Y. Berencén, J. Ramírez, B. Garrido
We report on the electrical and electroluminescence properties of four different layers based on Er-doped silicon oxide (or nitride) with (or without) silicon nanocrystals. Electrical measurements have allowed us to identify that samples composed by silicon nitride matrices present a Poole-Frenkel-type conduction, whereas those ones formed by silicon oxide matrices show a Fowler-Nordheim tunneling mechanism. In addition, infrared power efficiency at 1.54 μm has shown to be two orders of magnitude larger for Er-doped silicon oxide layers than for Er-doped silicon nitrides. Moreover, an interesting trade off between power efficiency at 1.54 μm and device operation lifetime has been observed by comparing both Er-doped silicon oxides and Er-doped silicon nitride layers.
{"title":"Er-doped Si-based electroluminescent capacitors: Role of different host matrices on the electrical and luminescence properties","authors":"Y. Berencén, J. Ramírez, B. Garrido","doi":"10.1109/CDE.2013.6481388","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481388","url":null,"abstract":"We report on the electrical and electroluminescence properties of four different layers based on Er-doped silicon oxide (or nitride) with (or without) silicon nanocrystals. Electrical measurements have allowed us to identify that samples composed by silicon nitride matrices present a Poole-Frenkel-type conduction, whereas those ones formed by silicon oxide matrices show a Fowler-Nordheim tunneling mechanism. In addition, infrared power efficiency at 1.54 μm has shown to be two orders of magnitude larger for Er-doped silicon oxide layers than for Er-doped silicon nitrides. Moreover, an interesting trade off between power efficiency at 1.54 μm and device operation lifetime has been observed by comparing both Er-doped silicon oxides and Er-doped silicon nitride layers.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"74 1","pages":"245-248"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88763284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481346
M. Rao, N. Murty
An improved analytical model for the DC characteristics of 4H-SiC MEtal Semiconductor Field Effect Transistors (MESFETs) is proposed. The model takes into account three major effects namely substrate trapping, surface trapping and thermal effects to describe the DC behavior of the device. The analytical model of I-V characteristics incorporate Caughey-Thomas model of field dependence electron mobility, substrate trapping of electrons by multiple deep level traps (which is the characteristic of 4H-SiC) and two-dimensional analysis of charge distribution under the gate. The collapse of drain current is observed on the I-V characteristics. This unique model proposed is a complete model which takes into consideration all the critical material defects and thermal effects with trapping. Hence the model behavior is very close to real time MESFET.
{"title":"An improved I-V model of 4H-SiC MESFETs incorporating substrate trapping, surface trapping and thermal effects","authors":"M. Rao, N. Murty","doi":"10.1109/CDE.2013.6481346","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481346","url":null,"abstract":"An improved analytical model for the DC characteristics of 4H-SiC MEtal Semiconductor Field Effect Transistors (MESFETs) is proposed. The model takes into account three major effects namely substrate trapping, surface trapping and thermal effects to describe the DC behavior of the device. The analytical model of I-V characteristics incorporate Caughey-Thomas model of field dependence electron mobility, substrate trapping of electrons by multiple deep level traps (which is the characteristic of 4H-SiC) and two-dimensional analysis of charge distribution under the gate. The collapse of drain current is observed on the I-V characteristics. This unique model proposed is a complete model which takes into consideration all the critical material defects and thermal effects with trapping. Hence the model behavior is very close to real time MESFET.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"35 1","pages":"75-78"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85187240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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