Pub Date : 2013-02-01DOI: 10.1109/CDE.2013.6481410
P. Ortega, R. Jove-Casulleras, A. Pedret, R. Gonzalvez, G. López, I. Martín, M. Domínguez, R. Alcubilla, Adriano Camps
In this work the fabrication and electrical characterization of interdigitated back contact IBC solar cells is shown. These solar cells have been specifically designed for a CubeSat based satellite under developement at the Universitat Politecnica de Catalunya (UPC). Solar cells incorporate a transparent cover-glass as an extraterrestrial radiation shield. Front surface passivation was achieved using an Al2O3 layer exhibiting surface recombination velocities <; 100 cmls at the final device. Measurements confirm photovoltaic efficiencies η's-12%, with open circuit voltages Voc's ~650 m V and short circuit current densities Jsc's ~25 mA/cm2. A module with 11 IBC solar cells interconnected in series will be integrated in one of the faces of the satellite forming part of the power subsystem. Preliminary results confirm the good electrical performance of the module.
本文介绍了交错背接触IBC太阳能电池的制备和电学特性。这些太阳能电池是专门为加泰罗尼亚理工大学(UPC)正在开发的基于CubeSat的卫星设计的。太阳能电池包括一个透明的覆盖玻璃作为地外辐射屏蔽。采用表面复合速度<;在最终设备上有100 CMLS。测量结果证实，在开路电压Voc ~650 m V和短路电流密度Jsc ~25 mA/cm2下，光伏效率η′s ~ 12%。一个由11个IBC太阳能电池串联连接的模块将集成在卫星的一个面，形成电源子系统的一部分。初步结果证实该模块具有良好的电气性能。
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Pub Date : 2013-02-01DOI: 10.1109/CDE.2013.6481380
S. Biswas, I. Mahbub, M. S. Islam
A quantitative measure of how much the inclusion of the conduction band-valence band coupling effects influence the band structure was obtained. The numerical results of two formalisms were derived using Finite Difference Method (FDM) where one formalism ignores the coupling effects between conduction and valence bands. It was found that the conduction band- valence band coupling effects significantly affects the band structure of typical InGaN Quantum Wells (QW) especially the conduction subbands.
{"title":"Conduction band-valence band coupling effects on the band structure of In0.28Ga0.72N/GaN Quantum Well","authors":"S. Biswas, I. Mahbub, M. S. Islam","doi":"10.1109/CDE.2013.6481380","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481380","url":null,"abstract":"A quantitative measure of how much the inclusion of the conduction band-valence band coupling effects influence the band structure was obtained. The numerical results of two formalisms were derived using Finite Difference Method (FDM) where one formalism ignores the coupling effects between conduction and valence bands. It was found that the conduction band- valence band coupling effects significantly affects the band structure of typical InGaN Quantum Wells (QW) especially the conduction subbands.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"86 1","pages":"211-214"},"PeriodicalIF":0.0,"publicationDate":"2013-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77101634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-02-01DOI: 10.1109/CDE.2013.6481381
J. Mateos, J. Millithaler, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, Yasaman Alimi, L. Zhang, A. Rezazadeh, A. Song, P. Sangaré, G. Ducournau, C. Gaquière, A. Westlund, J. Grahn
In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.
{"title":"Room temperature THz detection and emission with semiconductor nanodevices","authors":"J. Mateos, J. Millithaler, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, Yasaman Alimi, L. Zhang, A. Rezazadeh, A. Song, P. Sangaré, G. Ducournau, C. Gaquière, A. Westlund, J. Grahn","doi":"10.1109/CDE.2013.6481381","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481381","url":null,"abstract":"In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"34 1","pages":"215-218"},"PeriodicalIF":0.0,"publicationDate":"2013-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80807371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-02-01DOI: 10.1109/CDE.2013.6481384
E. Miranda
Within the wide variety of statistical techniques used to characterize the occurrence of failure events in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures, there is one that has received particular attention in recent years because of its relevance in oxide reliability analysis. Spatial statistics is a specialized branch of statistics aimed to summarize information about the spatial location of entities in 1, 2 and 3 dimensions. Since it has been shown that a device can still be operative after one or several breakdown events, it is of interest to investigate whether temporal and spatial correlations can occur among failure events. In this paper, the attention will be exclusively focused on the spatial aspect of the problem, with special emphasis on detecting departures from homogeneity. Two cases will be analyzed in which the failure events become visible on the top electrode as a 2D point pattern. These patterns can be assessed using a number of spatial statistical tools such as the intensity plot, the interevent distance histogram, the pair correlation function and residual analysis.
{"title":"Failure analysis of MIM and MIS structures using spatial statistics","authors":"E. Miranda","doi":"10.1109/CDE.2013.6481384","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481384","url":null,"abstract":"Within the wide variety of statistical techniques used to characterize the occurrence of failure events in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures, there is one that has received particular attention in recent years because of its relevance in oxide reliability analysis. Spatial statistics is a specialized branch of statistics aimed to summarize information about the spatial location of entities in 1, 2 and 3 dimensions. Since it has been shown that a device can still be operative after one or several breakdown events, it is of interest to investigate whether temporal and spatial correlations can occur among failure events. In this paper, the attention will be exclusively focused on the spatial aspect of the problem, with special emphasis on detecting departures from homogeneity. Two cases will be analyzed in which the failure events become visible on the top electrode as a 2D point pattern. These patterns can be assessed using a number of spatial statistical tools such as the intensity plot, the interevent distance histogram, the pair correlation function and residual analysis.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"19 1","pages":"227-232"},"PeriodicalIF":0.0,"publicationDate":"2013-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86637660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-27DOI: 10.1049/iet-cds:20070005
J. Millán
It is worldwide accepted that a real breakthrough in Power Electronics mainly comes Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation to the end-user, the electric energy undergoes a number of conversions. Which are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed.
{"title":"Wide Band Gap power semiconductor devices","authors":"J. Millán","doi":"10.1049/iet-cds:20070005","DOIUrl":"https://doi.org/10.1049/iet-cds:20070005","url":null,"abstract":"It is worldwide accepted that a real breakthrough in Power Electronics mainly comes Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation to the end-user, the electric energy undergoes a number of conversions. Which are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"111 1","pages":"293-296"},"PeriodicalIF":0.0,"publicationDate":"2007-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82626459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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