Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481404
J. Jiménez, J. Anaya, V. Hortelano, J. Souto, A. Martín-Martín
Rapid and catastrophic degradation of high power laser diodes occur because of the generation of extended defects inside the active parts of the laser structure during the laser operation. Local hot spots play a major role as actuators of the driven force leading to the formation of extended crystal defects. The laser power threshold for degradation is very sensitive to the packaging induced stress, and the thermal conductivity of the multilayer structure. The thermal conductivity of the QW and the barriers is suppressed by the low dimensionality but also by the quality of the interfaces being a major actor of the laser diode degradation. Modelling the thermal stresses induced by the hot spots in the active region of the diode permits to describe the degradation mechanisms of high power laser diodes.
{"title":"Degradation signatures of high power laser diodes","authors":"J. Jiménez, J. Anaya, V. Hortelano, J. Souto, A. Martín-Martín","doi":"10.1109/CDE.2013.6481404","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481404","url":null,"abstract":"Rapid and catastrophic degradation of high power laser diodes occur because of the generation of extended defects inside the active parts of the laser structure during the laser operation. Local hot spots play a major role as actuators of the driven force leading to the formation of extended crystal defects. The laser power threshold for degradation is very sensitive to the packaging induced stress, and the thermal conductivity of the multilayer structure. The thermal conductivity of the QW and the barriers is suppressed by the low dimensionality but also by the quality of the interfaces being a major actor of the laser diode degradation. Modelling the thermal stresses induced by the hot spots in the active region of the diode permits to describe the degradation mechanisms of high power laser diodes.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"174 1","pages":"309-312"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79651205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481338
J. Millithaler, I. Íñiguez-de-la-Torre, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière
An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high frequency oscillations.
{"title":"Monte Carlo analysis of thermal effects in self-switching diodes","authors":"J. Millithaler, I. Íñiguez-de-la-Torre, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière","doi":"10.1109/CDE.2013.6481338","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481338","url":null,"abstract":"An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high frequency oscillations.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"21 1","pages":"45-48"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82732952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481356
D. Matatagui, J. Fontecha, M. J. Fernández, J. P. Santos, M. C. Horrillo, I. Gràcia, C. Cané
A Love-wave device combined with a microfluidic chip of PDMS has been developed to detect biological warfare agents (BWA) in liquid media. It has been tested with the realization of two immunoassays: in the first one the bacteriophage M13 has been detected through the mouse monoclonal antibody, anti-M13 (AM13) and in the second one the detection has been carried out by means of the immunoreaction of the rabbit immunoglobulin (Rabbit IgG) with the goat anti-rabbit polyclonal antibody (GAR). The detections have been performed in a dynamic mode (continuous flow-through) in order to obtain a short response time. Different concentrations have been detected with a fast response and a good discrimination among them.
{"title":"Microfluidics applied to Love-wave devices to detect biological warfare agents in dynamic mode","authors":"D. Matatagui, J. Fontecha, M. J. Fernández, J. P. Santos, M. C. Horrillo, I. Gràcia, C. Cané","doi":"10.1109/CDE.2013.6481356","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481356","url":null,"abstract":"A Love-wave device combined with a microfluidic chip of PDMS has been developed to detect biological warfare agents (BWA) in liquid media. It has been tested with the realization of two immunoassays: in the first one the bacteriophage M13 has been detected through the mouse monoclonal antibody, anti-M13 (AM13) and in the second one the detection has been carried out by means of the immunoreaction of the rabbit immunoglobulin (Rabbit IgG) with the goat anti-rabbit polyclonal antibody (GAR). The detections have been performed in a dynamic mode (continuous flow-through) in order to obtain a short response time. Different concentrations have been detected with a fast response and a good discrimination among them.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"23 1","pages":"115-118"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83963940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481393
Y. Jato, C. Perez, A. Herrera, L. Diego
This paper reports on the simulation steps needed to design a GaAs MMIC LNA for S-DMB on-board satellite applications in only one fabrication iteration, which achieves a noise figure <; 1.3 dB and gain> 28 dB for applications from 1.95 to 2.3 GHz. In addition, the amplifier obtains a high linearity with an OIP3 of 20.7 dBm and PldB of 6 dBm over a 1.95-2.3 GHz bandwidth. Availability of accurate library simulation models and the use of ADS co-simulation scheme permit us reducing design time and more importantly obtaining a first run working chip.
{"title":"First run S-DMB MMIC low noise amplifier","authors":"Y. Jato, C. Perez, A. Herrera, L. Diego","doi":"10.1109/CDE.2013.6481393","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481393","url":null,"abstract":"This paper reports on the simulation steps needed to design a GaAs MMIC LNA for S-DMB on-board satellite applications in only one fabrication iteration, which achieves a noise figure <; 1.3 dB and gain> 28 dB for applications from 1.95 to 2.3 GHz. In addition, the amplifier obtains a high linearity with an OIP3 of 20.7 dBm and PldB of 6 dBm over a 1.95-2.3 GHz bandwidth. Availability of accurate library simulation models and the use of ADS co-simulation scheme permit us reducing design time and more importantly obtaining a first run working chip.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"144 1","pages":"265-268"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77407538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481361
Càndid Reig, M. Cubells, J. Madrenas, A. De Marcellis, S. Cardoso, P. Freitas
Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-to-frequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology has been also analyzed.
{"title":"Quasi-digital conversion for resistive devices: Application in GMR-based IC current sensors","authors":"Càndid Reig, M. Cubells, J. Madrenas, A. De Marcellis, S. Cardoso, P. Freitas","doi":"10.1109/CDE.2013.6481361","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481361","url":null,"abstract":"Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-to-frequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology has been also analyzed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"52 1","pages":"135-138"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78647116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481367
J. Represa, A. Cabeceira, I. Barba, A. Grande
Metamaterials are a new kind of artificial media, exhibiting electromagnetic properties not found in nature. In fact, the word “meta” comes from the Greek word meaning “beyond”. Among them, the class of “Left Handed” (LH), also known as “Double Negative” (DNG) metamaterials shows unusual characteristics such as backward waves, negative refraction or reverse Doppler effect. In this paper we will present the fundamentals of metamaterials: structure, electromagnetic properties, characteristics of wave propagation and some applications in high frequency (ranging from GHz to THz) passive circuits. Also, a brief scope of prospective applications in electronic circuitry will be discussed.
{"title":"Metamaterials, a chance for high frequency electronics?","authors":"J. Represa, A. Cabeceira, I. Barba, A. Grande","doi":"10.1109/CDE.2013.6481367","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481367","url":null,"abstract":"Metamaterials are a new kind of artificial media, exhibiting electromagnetic properties not found in nature. In fact, the word “meta” comes from the Greek word meaning “beyond”. Among them, the class of “Left Handed” (LH), also known as “Double Negative” (DNG) metamaterials shows unusual characteristics such as backward waves, negative refraction or reverse Doppler effect. In this paper we will present the fundamentals of metamaterials: structure, electromagnetic properties, characteristics of wave propagation and some applications in high frequency (ranging from GHz to THz) passive circuits. Also, a brief scope of prospective applications in electronic circuitry will be discussed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"345 1","pages":"159-162"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82970126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481363
D. Vega, J. Reina, A. Rodríguez
In this paper we study a compact gas sensor based on a photonic crystal built from macroporous silicon. Its sensing mechanism is based in the absorption of infrared light by a gas. Photonic crystals are structured materials which can be engineered to have photonic bandgaps. They also can be tailored to create localized states inside the bandgaps. We exploit the possibility to confine light inside a cavity with very high-Q, which allows for long interaction time between the gas and light. Simulation of different 2-D and 3-D structures have been done to extract the appropriate dimensions for gas detection, and their optical behaviour. Resonant cavities were created by adding defects in the ordered geometrical structure, thus creating a single state and confining the trapped light in a crystal bandgap. The structures were tested by simulating the presence of ethanol inside the structures. Gas is to be detected by a noticeable change in the resonance peak both in amplitude and spread, caused by the gas detuning the cavity. Macroporous silicon samples of the investigated structures with defects were fabricated and measured by IR spectrography. Cavity resonances can be clearly seen in the samples, though we need to improve fabrication to adjust the theoretically calculated dimensions.
{"title":"Macroporous silicon photonic crystals for gas sensing","authors":"D. Vega, J. Reina, A. Rodríguez","doi":"10.1109/CDE.2013.6481363","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481363","url":null,"abstract":"In this paper we study a compact gas sensor based on a photonic crystal built from macroporous silicon. Its sensing mechanism is based in the absorption of infrared light by a gas. Photonic crystals are structured materials which can be engineered to have photonic bandgaps. They also can be tailored to create localized states inside the bandgaps. We exploit the possibility to confine light inside a cavity with very high-Q, which allows for long interaction time between the gas and light. Simulation of different 2-D and 3-D structures have been done to extract the appropriate dimensions for gas detection, and their optical behaviour. Resonant cavities were created by adding defects in the ordered geometrical structure, thus creating a single state and confining the trapped light in a crystal bandgap. The structures were tested by simulating the presence of ethanol inside the structures. Gas is to be detected by a noticeable change in the resonance peak both in amplitude and spread, caused by the gas detuning the cavity. Macroporous silicon samples of the investigated structures with defects were fabricated and measured by IR spectrography. Cavity resonances can be clearly seen in the samples, though we need to improve fabrication to adjust the theoretically calculated dimensions.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"6 1","pages":"143-146"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77955410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481378
A. Coll, S. Bermejo, L. Castañer
Nanostructuring materials such as silicon provides a good technology to fabricate optical and sensing devices. The possibility to fill the pores or channels with different material opens the way to new applications. In this work, we study the electrokinetics of electrospraying technique to fill porous material with nanobeads. The simulations take into account a photonic crystal topology applying a difference potential of 14 kV. Measurements show the viability of filling alumina nanoporous with 360nm polyestyrene nanospheres.
{"title":"Nanohole particle filling by electrospray","authors":"A. Coll, S. Bermejo, L. Castañer","doi":"10.1109/CDE.2013.6481378","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481378","url":null,"abstract":"Nanostructuring materials such as silicon provides a good technology to fabricate optical and sensing devices. The possibility to fill the pores or channels with different material opens the way to new applications. In this work, we study the electrokinetics of electrospraying technique to fill porous material with nanobeads. The simulations take into account a photonic crystal topology applying a difference potential of 14 kV. Measurements show the viability of filling alumina nanoporous with 360nm polyestyrene nanospheres.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"98 1","pages":"203-206"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73605955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481395
V. Hortelano, A. Torres, M. Sanz, J. Jiménez, O. Martínez, J. Landesman
InP ridge waveguides with different dimensions, height and width, were fabricated by inductively coupled plasma etching. The InP raw material was provided of nine buried InAsP quantum wells with variable composition and at different depths, in order to study the damage produced in the structure by the dry etching process. The etched guides were studied by spectrally resolved cathodoluminescence. The changes induced in the quantum wells by different etching chemistries were analyzed. Other parameters as the etching time, and guide dimensions were considered.
{"title":"Intermixing in InAsP/InP quantum wells induced by dry etching processes","authors":"V. Hortelano, A. Torres, M. Sanz, J. Jiménez, O. Martínez, J. Landesman","doi":"10.1109/CDE.2013.6481395","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481395","url":null,"abstract":"InP ridge waveguides with different dimensions, height and width, were fabricated by inductively coupled plasma etching. The InP raw material was provided of nine buried InAsP quantum wells with variable composition and at different depths, in order to study the damage produced in the structure by the dry etching process. The etched guides were studied by spectrally resolved cathodoluminescence. The changes induced in the quantum wells by different etching chemistries were analyzed. Other parameters as the etching time, and guide dimensions were considered.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"14 1","pages":"273-276"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90098467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481345
K. M. Awawdeh, J. Tejada, P. Varo, J. Villanueva, M. Deen
In this work, we propose a procedure to extract information of the trapping processes that occur in organic thin film transistors (OTFTs) during hysteresis mechanisms. The procedure is based on a compact model that describes the transistor as the combination of an intrinsic transistor and the contact regions. The model is used to extract output characteristics for the intrinsic transistor from experimental measurements. It eliminates the effect of the contacts, not only from the gate-and drain-terminal voltages, but also from fundamental parameters such as the mobility and the threshold voltage. Other models that consider the contact effects in a partial way are analyzed and the results compared to those from the proposed procedure.
{"title":"Influence of the contact effects on the variation of the trapped charge in the intrinsic channel of organic thin film transistors","authors":"K. M. Awawdeh, J. Tejada, P. Varo, J. Villanueva, M. Deen","doi":"10.1109/CDE.2013.6481345","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481345","url":null,"abstract":"In this work, we propose a procedure to extract information of the trapping processes that occur in organic thin film transistors (OTFTs) during hysteresis mechanisms. The procedure is based on a compact model that describes the transistor as the combination of an intrinsic transistor and the contact regions. The model is used to extract output characteristics for the intrinsic transistor from experimental measurements. It eliminates the effect of the contacts, not only from the gate-and drain-terminal voltages, but also from fundamental parameters such as the mobility and the threshold voltage. Other models that consider the contact effects in a partial way are analyzed and the results compared to those from the proposed procedure.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"27 1","pages":"71-74"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90560739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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