Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481361
Càndid Reig, M. Cubells, J. Madrenas, A. De Marcellis, S. Cardoso, P. Freitas
Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-to-frequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology has been also analyzed.
{"title":"Quasi-digital conversion for resistive devices: Application in GMR-based IC current sensors","authors":"Càndid Reig, M. Cubells, J. Madrenas, A. De Marcellis, S. Cardoso, P. Freitas","doi":"10.1109/CDE.2013.6481361","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481361","url":null,"abstract":"Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-to-frequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology has been also analyzed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"52 1","pages":"135-138"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78647116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481344
O. Moldovan, F. Lime, B. Nae, B. Iñíguez
In this paper we present a simple compact model for the computation of the drain current in a new type of transistor, a junctionless VBT (Variable Barrier Transistor).A good agreement between our results and two TCAD simulation tools (COMSOL and ATLAS), proves the accuracy of this model. It is the first time that a compact drain current model is derived for this type of transistor.
{"title":"A simple compact model for the junctionless Variable Barrier Transistor (VBT)","authors":"O. Moldovan, F. Lime, B. Nae, B. Iñíguez","doi":"10.1109/CDE.2013.6481344","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481344","url":null,"abstract":"In this paper we present a simple compact model for the computation of the drain current in a new type of transistor, a junctionless VBT (Variable Barrier Transistor).A good agreement between our results and two TCAD simulation tools (COMSOL and ATLAS), proves the accuracy of this model. It is the first time that a compact drain current model is derived for this type of transistor.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"31 1","pages":"67-70"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75131600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481393
Y. Jato, C. Perez, A. Herrera, L. Diego
This paper reports on the simulation steps needed to design a GaAs MMIC LNA for S-DMB on-board satellite applications in only one fabrication iteration, which achieves a noise figure <; 1.3 dB and gain> 28 dB for applications from 1.95 to 2.3 GHz. In addition, the amplifier obtains a high linearity with an OIP3 of 20.7 dBm and PldB of 6 dBm over a 1.95-2.3 GHz bandwidth. Availability of accurate library simulation models and the use of ADS co-simulation scheme permit us reducing design time and more importantly obtaining a first run working chip.
{"title":"First run S-DMB MMIC low noise amplifier","authors":"Y. Jato, C. Perez, A. Herrera, L. Diego","doi":"10.1109/CDE.2013.6481393","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481393","url":null,"abstract":"This paper reports on the simulation steps needed to design a GaAs MMIC LNA for S-DMB on-board satellite applications in only one fabrication iteration, which achieves a noise figure <; 1.3 dB and gain> 28 dB for applications from 1.95 to 2.3 GHz. In addition, the amplifier obtains a high linearity with an OIP3 of 20.7 dBm and PldB of 6 dBm over a 1.95-2.3 GHz bandwidth. Availability of accurate library simulation models and the use of ADS co-simulation scheme permit us reducing design time and more importantly obtaining a first run working chip.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"144 1","pages":"265-268"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77407538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481404
J. Jiménez, J. Anaya, V. Hortelano, J. Souto, A. Martín-Martín
Rapid and catastrophic degradation of high power laser diodes occur because of the generation of extended defects inside the active parts of the laser structure during the laser operation. Local hot spots play a major role as actuators of the driven force leading to the formation of extended crystal defects. The laser power threshold for degradation is very sensitive to the packaging induced stress, and the thermal conductivity of the multilayer structure. The thermal conductivity of the QW and the barriers is suppressed by the low dimensionality but also by the quality of the interfaces being a major actor of the laser diode degradation. Modelling the thermal stresses induced by the hot spots in the active region of the diode permits to describe the degradation mechanisms of high power laser diodes.
{"title":"Degradation signatures of high power laser diodes","authors":"J. Jiménez, J. Anaya, V. Hortelano, J. Souto, A. Martín-Martín","doi":"10.1109/CDE.2013.6481404","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481404","url":null,"abstract":"Rapid and catastrophic degradation of high power laser diodes occur because of the generation of extended defects inside the active parts of the laser structure during the laser operation. Local hot spots play a major role as actuators of the driven force leading to the formation of extended crystal defects. The laser power threshold for degradation is very sensitive to the packaging induced stress, and the thermal conductivity of the multilayer structure. The thermal conductivity of the QW and the barriers is suppressed by the low dimensionality but also by the quality of the interfaces being a major actor of the laser diode degradation. Modelling the thermal stresses induced by the hot spots in the active region of the diode permits to describe the degradation mechanisms of high power laser diodes.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"174 1","pages":"309-312"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79651205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481338
J. Millithaler, I. Íñiguez-de-la-Torre, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière
An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high frequency oscillations.
{"title":"Monte Carlo analysis of thermal effects in self-switching diodes","authors":"J. Millithaler, I. Íñiguez-de-la-Torre, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière","doi":"10.1109/CDE.2013.6481338","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481338","url":null,"abstract":"An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high frequency oscillations.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"21 1","pages":"45-48"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82732952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481345
K. M. Awawdeh, J. Tejada, P. Varo, J. Villanueva, M. Deen
In this work, we propose a procedure to extract information of the trapping processes that occur in organic thin film transistors (OTFTs) during hysteresis mechanisms. The procedure is based on a compact model that describes the transistor as the combination of an intrinsic transistor and the contact regions. The model is used to extract output characteristics for the intrinsic transistor from experimental measurements. It eliminates the effect of the contacts, not only from the gate-and drain-terminal voltages, but also from fundamental parameters such as the mobility and the threshold voltage. Other models that consider the contact effects in a partial way are analyzed and the results compared to those from the proposed procedure.
{"title":"Influence of the contact effects on the variation of the trapped charge in the intrinsic channel of organic thin film transistors","authors":"K. M. Awawdeh, J. Tejada, P. Varo, J. Villanueva, M. Deen","doi":"10.1109/CDE.2013.6481345","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481345","url":null,"abstract":"In this work, we propose a procedure to extract information of the trapping processes that occur in organic thin film transistors (OTFTs) during hysteresis mechanisms. The procedure is based on a compact model that describes the transistor as the combination of an intrinsic transistor and the contact regions. The model is used to extract output characteristics for the intrinsic transistor from experimental measurements. It eliminates the effect of the contacts, not only from the gate-and drain-terminal voltages, but also from fundamental parameters such as the mobility and the threshold voltage. Other models that consider the contact effects in a partial way are analyzed and the results compared to those from the proposed procedure.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"27 1","pages":"71-74"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90560739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481416
A. Boronat, S. Silvestre, L. Castañer
In the present work we have investigated the optical absorption behavior of GaAs(Ti) films deposited by r.f sputtering technique under different H2 partial pressures. In previous work we have already demonstrated the feasibility to obtain GaAs films with high dose of Ti, which we refer to as GaAs(Ti). Any absorption peak, which could be related with the presence of an intermediate band, has been identified. The low Etauc parameter together with a broad Urbach tail of the films make us to suspect that the possible presence of an absorption peak could be hidden. The incorporation of H2 on sputtered GaAs films have demonstrated before a shift of the Etauc parameter to higher values and a reduction of the Urbach tail.
{"title":"Influence of hydrogen on the optical absorption response of GaAs(Ti) films deposited by R.F. sputtering","authors":"A. Boronat, S. Silvestre, L. Castañer","doi":"10.1109/CDE.2013.6481416","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481416","url":null,"abstract":"In the present work we have investigated the optical absorption behavior of GaAs(Ti) films deposited by r.f sputtering technique under different H2 partial pressures. In previous work we have already demonstrated the feasibility to obtain GaAs films with high dose of Ti, which we refer to as GaAs(Ti). Any absorption peak, which could be related with the presence of an intermediate band, has been identified. The low Etauc parameter together with a broad Urbach tail of the films make us to suspect that the possible presence of an absorption peak could be hidden. The incorporation of H2 on sputtered GaAs films have demonstrated before a shift of the Etauc parameter to higher values and a reduction of the Urbach tail.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"1 1","pages":"357-360"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86529903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481367
J. Represa, A. Cabeceira, I. Barba, A. Grande
Metamaterials are a new kind of artificial media, exhibiting electromagnetic properties not found in nature. In fact, the word “meta” comes from the Greek word meaning “beyond”. Among them, the class of “Left Handed” (LH), also known as “Double Negative” (DNG) metamaterials shows unusual characteristics such as backward waves, negative refraction or reverse Doppler effect. In this paper we will present the fundamentals of metamaterials: structure, electromagnetic properties, characteristics of wave propagation and some applications in high frequency (ranging from GHz to THz) passive circuits. Also, a brief scope of prospective applications in electronic circuitry will be discussed.
{"title":"Metamaterials, a chance for high frequency electronics?","authors":"J. Represa, A. Cabeceira, I. Barba, A. Grande","doi":"10.1109/CDE.2013.6481367","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481367","url":null,"abstract":"Metamaterials are a new kind of artificial media, exhibiting electromagnetic properties not found in nature. In fact, the word “meta” comes from the Greek word meaning “beyond”. Among them, the class of “Left Handed” (LH), also known as “Double Negative” (DNG) metamaterials shows unusual characteristics such as backward waves, negative refraction or reverse Doppler effect. In this paper we will present the fundamentals of metamaterials: structure, electromagnetic properties, characteristics of wave propagation and some applications in high frequency (ranging from GHz to THz) passive circuits. Also, a brief scope of prospective applications in electronic circuitry will be discussed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"345 1","pages":"159-162"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82970126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481356
D. Matatagui, J. Fontecha, M. J. Fernández, J. P. Santos, M. C. Horrillo, I. Gràcia, C. Cané
A Love-wave device combined with a microfluidic chip of PDMS has been developed to detect biological warfare agents (BWA) in liquid media. It has been tested with the realization of two immunoassays: in the first one the bacteriophage M13 has been detected through the mouse monoclonal antibody, anti-M13 (AM13) and in the second one the detection has been carried out by means of the immunoreaction of the rabbit immunoglobulin (Rabbit IgG) with the goat anti-rabbit polyclonal antibody (GAR). The detections have been performed in a dynamic mode (continuous flow-through) in order to obtain a short response time. Different concentrations have been detected with a fast response and a good discrimination among them.
{"title":"Microfluidics applied to Love-wave devices to detect biological warfare agents in dynamic mode","authors":"D. Matatagui, J. Fontecha, M. J. Fernández, J. P. Santos, M. C. Horrillo, I. Gràcia, C. Cané","doi":"10.1109/CDE.2013.6481356","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481356","url":null,"abstract":"A Love-wave device combined with a microfluidic chip of PDMS has been developed to detect biological warfare agents (BWA) in liquid media. It has been tested with the realization of two immunoassays: in the first one the bacteriophage M13 has been detected through the mouse monoclonal antibody, anti-M13 (AM13) and in the second one the detection has been carried out by means of the immunoreaction of the rabbit immunoglobulin (Rabbit IgG) with the goat anti-rabbit polyclonal antibody (GAR). The detections have been performed in a dynamic mode (continuous flow-through) in order to obtain a short response time. Different concentrations have been detected with a fast response and a good discrimination among them.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"23 1","pages":"115-118"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83963940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481359
I. Sayago, M. J. Fernández, J. Fontecha, M. C. Horrillo, E. Terrado, A. Seral-Ascaso, E. Muñoz
Surface acoustic wave (SAW) gas sensors based on the use of carbon nanotube (CNT) networks as sensitive layers have been investigated for the detection of atmospheric gas pollutants: volatile organic compounds (VOCs), NO2, CO, and H2 . SAW sensor configuration consists of a delay line made on a piezoelectric substrate (ST -X cut quartz) and a sensitive layer (CNTs) deposited between the interdigital transducers (IDTs). CNT networks were fabricated by airbrushing single-walled-(SWCNTs) and double-walled- (DWCNTs) CNT dispersions onto quartz substrates. Among all the tested CNT materials and gases, only DWCNT -based SAW sensors were sensitive upon exposure to low concentration of octane and toluene, providing fast response and recovery times to these VOCs.
{"title":"Carbon nanotube-based SAW sensors","authors":"I. Sayago, M. J. Fernández, J. Fontecha, M. C. Horrillo, E. Terrado, A. Seral-Ascaso, E. Muñoz","doi":"10.1109/CDE.2013.6481359","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481359","url":null,"abstract":"Surface acoustic wave (SAW) gas sensors based on the use of carbon nanotube (CNT) networks as sensitive layers have been investigated for the detection of atmospheric gas pollutants: volatile organic compounds (VOCs), NO2, CO, and H2 . SAW sensor configuration consists of a delay line made on a piezoelectric substrate (ST -X cut quartz) and a sensitive layer (CNTs) deposited between the interdigital transducers (IDTs). CNT networks were fabricated by airbrushing single-walled-(SWCNTs) and double-walled- (DWCNTs) CNT dispersions onto quartz substrates. Among all the tested CNT materials and gases, only DWCNT -based SAW sensors were sensitive upon exposure to low concentration of octane and toluene, providing fast response and recovery times to these VOCs.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"4 1","pages":"127-130"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90303414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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