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2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)最新文献

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Fabrication of superconducting YBCO microwave microstrip resonators 超导YBCO微波微带谐振器的制备
Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7354976
M. Ertuğrul, G. Aras, U. Hasar, M. T. Yurtcan, E. Sonmez, O. Simsek
Superconducting resonators and filters in the microwave range are being made by thin film technology and used in base stations for wireless communication. The operation of superconducting resonators in perpendicular magnetic fields normally leads to a reduction in the device performance due to energy dissipating by Abrikosov vortices. We fabricated YBCO resonator to eliminate losses due to vortex motion. In order to eliminate vortex induced energy losses for superconducting YBCO resonators, we fabricated YBCO micrositrip resonators with different spatial distributions of nanodecoration by Pd nanodots and micro patterned pinning sites by antidots. In order to provide an engineered surface to get artificial pinning centers in YBCO films, palladium (Pd) nano-islands were decorated on substrate systematically. Systematic effects of Pd additions on the structural and flux pinning properties of YBa2Cu3O7-δ (YBCO) films deposited by Pulsed Laser Deposition (PLD) system have been investigated. The evolution of these nano-islands with processing was studied by atomic force microscopy (AFM). The performance of the surface decorated samples has been qualified by depositing 0.8 μm-thick YBCO films by pulsed laser deposition (PLD). The results demonstrate the strong potential of surface decoration by nano-islands for introducing pinning centers into high temperature superconductor applications.
微波范围内的超导谐振器和滤波器正由薄膜技术制成,并用于无线通信的基站。超导谐振器在垂直磁场中的工作通常会由于阿布里科索夫涡流的能量耗散而导致器件性能的降低。为了消除涡流运动造成的损耗,我们制作了YBCO谐振腔。为了消除超导YBCO谐振腔的涡旋能量损失,我们制备了不同空间分布的YBCO微带谐振腔。为了给YBCO薄膜提供一个工程表面来获得人工钉钉中心,在衬底上系统地装饰了钯纳米岛。研究了Pd添加量对脉冲激光沉积(PLD) YBa2Cu3O7-δ (YBCO)薄膜结构和通量钉钉性能的影响。利用原子力显微镜(AFM)研究了这些纳米岛在加工过程中的演变。利用脉冲激光沉积技术(PLD)制备了0.8 μm厚的YBCO薄膜,并对表面修饰样品的性能进行了验证。结果表明,纳米岛表面修饰在将钉钉中心引入高温超导体应用方面具有很强的潜力。
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引用次数: 1
Improved growth quality of the ZnO thin films on Au nano-particles/p-Si 提高了ZnO薄膜在Au纳米颗粒/p-Si上的生长质量
Pub Date : 2015-01-01 DOI: 10.1109/RSM.2015.7355031
E. Gur, A. Baltakesmez, S. Tuzemen, Adem Yenisoy
In this study, gold thin films were grown 5 nm, 10nm, 20nm thicknesses on quartz substrate by thermal evaporation. In order to obtain Au nanoparticle films were annealed 3h and 6h at 600 °C or 800 °C in nitrogen atmosphere. After annealing gold nanoparticles were obtained varying in sizes averaged between 12-230 nm. Absorption in shift between 500nm-750nm has been observed. Au gold nanoparticles were also grown on p-Si substrate. ZnO thin films were grown by electrochemically on both gold nanoparticle/p-Si and reference pSi substrates. Characterizations of the ZnO thin films has shown that the thin films grown on Au nanoparticles has better crystal orientation, bigger grain sizes and higher absorption coefficient and device performance.
本研究采用热蒸发法在石英衬底上分别生长了5 nm、10nm、20nm厚度的金薄膜。为了获得金纳米颗粒,将膜在600℃或800℃氮气气氛中分别退火3h和6h。退火后得到的金纳米颗粒大小不等,平均在12-230 nm之间。在500nm-750nm之间的位移中观察到吸收。在p-Si衬底上也生长出了金纳米颗粒。采用电化学方法在金纳米颗粒/p-Si和参考pSi衬底上生长ZnO薄膜。对ZnO薄膜的表征表明,在Au纳米颗粒上生长的ZnO薄膜具有更好的晶体取向、更大的晶粒尺寸、更高的吸收系数和器件性能。
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引用次数: 2
期刊
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)
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