Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355023
A. M. Md Zain, B. Majlis, Richard M. De La Rue
In this paper we report successful experimental demonstration of consistency in controlling the resonance quality factor (Q-factor) value in the range from 1000 to 80,000, together with good free spectral range (FSR) control in the range from 30 nm to 62 nm - for an extended cavity. We have also demonstrated good repeatability of high Q-factor values for 1D photonic crystal (PhC)/Photonic wire (PhW) extended cavities based on Silicon-on-Insulator (SOI) using different fabrication cycles. The cavities that are considered in this paper range from 2 μm to 8.25 μm in length. The Q-factors for each resonance obtained for particular extended cavities have been measured on different occasions, with 5% variation in the Q-value over an extended period of time.
{"title":"Reproducibility and free spectral range (FSR) control of a high quality factor — 1D photonic crystal (PhC) extended cavity","authors":"A. M. Md Zain, B. Majlis, Richard M. De La Rue","doi":"10.1109/RSM.2015.7355023","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355023","url":null,"abstract":"In this paper we report successful experimental demonstration of consistency in controlling the resonance quality factor (Q-factor) value in the range from 1000 to 80,000, together with good free spectral range (FSR) control in the range from 30 nm to 62 nm - for an extended cavity. We have also demonstrated good repeatability of high Q-factor values for 1D photonic crystal (PhC)/Photonic wire (PhW) extended cavities based on Silicon-on-Insulator (SOI) using different fabrication cycles. The cavities that are considered in this paper range from 2 μm to 8.25 μm in length. The Q-factors for each resonance obtained for particular extended cavities have been measured on different occasions, with 5% variation in the Q-value over an extended period of time.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"134 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89339202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355018
Mohd H. S. Alrashdan, A. A. Hamzah, B. Majlis
Pb(ZrxTi1-x)O3 (PZT) thin films deposition at morphotropic phase boundary (MPB) and low temperature became one of the most promising fields in microelectromechanical systems (MEMS) for power harvesting applications, especially in a low frequency range, due to its large electromechanically coupling coefficient, dielectric and piezoelectric constants. PZT thin film deposition using RF sputtering has the advantage over other deposition methods due to its simplicity, better parameter control, cheapness, and requires a low deposition temperature. The influence of plasma parameter (RF power, Ar gas content and pressure) is studied to deposit the optimum Pb Zr 0.52 Ti 0.48 O3 thin film with 1μm thickness. The NTI nano film RF sputtering system was used to deposit the 36 samples of PZT thin film in (Si3N4/Si) substrate, the working temperature is at 20C°. The post annealing process with conventional treatment at 650 C° for 60 min is done. MERLIN compact FESEM is used to measure the cross section thickness of samples at four different points and an average is taken, thickness standard deviation and the radius of curvature is measured to check thin film uniformity and flatness. To determine the plasma parameters necessary for optimum thin film deposition, Energy dispersion spectroscopy (EDS) is used to analyze the chemical composition of deposited PZT thin film and found that 250 W of RF power, 15mT of Ar gas pressure, and 18 Sccm of Ar gas content is necessary for Pb Zr 0.52 Ti 0.48 O3 thin film deposition. A XRD technique is used to study phase formation in optimized PZT thin film. The perovskite phase (100, 110, and 111,200) is observed with maximum peak intensity of 1200 counts/ second for 110 phases. Piezoelectric constant d33 of 413 pm/v and 0.68 electromechanical coupling coefficient, which make the optimize PZT thin film (Pb Zr 0.52 Ti 0.48 O3) suitable in power harvesting devices at low frequency rang such as cardiac pacemaker.
Pb(ZrxTi1-x)O3 (PZT)薄膜因其具有较大的机电耦合系数、介电常数和压电常数而成为微机电系统(MEMS)中最具应用前景的领域之一，特别是在低频范围内。射频溅射沉积PZT薄膜具有简单、参数控制好、成本低、沉积温度低等优点。研究了等离子体参数(射频功率、氩气含量和压力)对制备厚度为1μm的Pb Zr 0.52 Ti 0.48 O3薄膜的影响。采用NTI纳米薄膜射频溅射系统在(Si3N4/Si)衬底上沉积了36个PZT薄膜样品，工作温度为20℃。在650°C下进行60 min的常规退火后处理。利用MERLIN紧凑FESEM测量样品在四个不同点的截面厚度，并取平均值，测量厚度标准差和曲率半径，以检查薄膜的均匀性和平整度。为了确定最佳薄膜沉积所需的等离子体参数，利用能量色散光谱(EDS)分析了沉积的PZT薄膜的化学成分，发现250w的射频功率、15mT的Ar气体压力和18 Sccm的Ar气体含量是pbzr 0.52 Ti 0.48 O3薄膜沉积所需的条件。采用XRD技术研究了优化后的PZT薄膜的相形成。观察到钙钛矿相(100,110和111,200)，110相的最大峰值强度为1200计数/秒。压电常数d33为413 pm/v，机电耦合系数为0.68，使得优化后的PZT薄膜(Pb Zr 0.52 Ti 0.48 O3)适用于心脏起搏器等低频功率采集器件。
{"title":"RF sputtered PZT thin film at MPB for piezoelectric harvester devices","authors":"Mohd H. S. Alrashdan, A. A. Hamzah, B. Majlis","doi":"10.1109/RSM.2015.7355018","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355018","url":null,"abstract":"Pb(ZrxTi1-x)O3 (PZT) thin films deposition at morphotropic phase boundary (MPB) and low temperature became one of the most promising fields in microelectromechanical systems (MEMS) for power harvesting applications, especially in a low frequency range, due to its large electromechanically coupling coefficient, dielectric and piezoelectric constants. PZT thin film deposition using RF sputtering has the advantage over other deposition methods due to its simplicity, better parameter control, cheapness, and requires a low deposition temperature. The influence of plasma parameter (RF power, Ar gas content and pressure) is studied to deposit the optimum Pb Zr 0.52 Ti 0.48 O3 thin film with 1μm thickness. The NTI nano film RF sputtering system was used to deposit the 36 samples of PZT thin film in (Si3N4/Si) substrate, the working temperature is at 20C°. The post annealing process with conventional treatment at 650 C° for 60 min is done. MERLIN compact FESEM is used to measure the cross section thickness of samples at four different points and an average is taken, thickness standard deviation and the radius of curvature is measured to check thin film uniformity and flatness. To determine the plasma parameters necessary for optimum thin film deposition, Energy dispersion spectroscopy (EDS) is used to analyze the chemical composition of deposited PZT thin film and found that 250 W of RF power, 15mT of Ar gas pressure, and 18 Sccm of Ar gas content is necessary for Pb Zr 0.52 Ti 0.48 O3 thin film deposition. A XRD technique is used to study phase formation in optimized PZT thin film. The perovskite phase (100, 110, and 111,200) is observed with maximum peak intensity of 1200 counts/ second for 110 phases. Piezoelectric constant d33 of 413 pm/v and 0.68 electromechanical coupling coefficient, which make the optimize PZT thin film (Pb Zr 0.52 Ti 0.48 O3) suitable in power harvesting devices at low frequency rang such as cardiac pacemaker.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"127 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90280206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355027
W. M. Mukhtar, S. Shaari, P. Menon, H. Razak
Plasmonic demodulation is a process where an optical signal due to the generation of surface plasmon polaritons (SPP) reacts with electrical domain, resulted an inverse relationship between them. In this study, fabrication processes of gold strip thin films on the glass substrates are presented. For an optimization purpose of electro-optics effect observation, the width of gold strip thin film is set as 0.5mm, which is equal to the laser beam spot diameter. First, the strip pattern is printed on a commercial transparent plastic slide. The pattern transfer process from plastic slide to glass slide is performed using UV light. Once the pattern is formed on the glass substrate, gold thin film with varies thicknesses namely 30nm, 50nm and 100nm are deposited by monitoring the sputtering time; via d.c. sputtering on the glass substrate which is partly coated with the positive photoresist. The photoresist is removed by immersing the coated glass slide in acetone solution for 15 minutes, follow with DI water for three seconds in an ultrasonic bath. This yields to the establishment of gold strip thin films with dimension of width 0.5mm × length 10mm. An optimal plasmonic demodulation process is successfully acquired by using gold metal strip with thickness of 30nm and higher laser power level, namely P=1.5mW. In a conclusion, we believe that the output of this study will contribute a significant impact to the development of the plasmonic demodulator as an active device.
{"title":"Fabrication of gold strip thin film on glass substrate for plasmonic demodulation application","authors":"W. M. Mukhtar, S. Shaari, P. Menon, H. Razak","doi":"10.1109/RSM.2015.7355027","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355027","url":null,"abstract":"Plasmonic demodulation is a process where an optical signal due to the generation of surface plasmon polaritons (SPP) reacts with electrical domain, resulted an inverse relationship between them. In this study, fabrication processes of gold strip thin films on the glass substrates are presented. For an optimization purpose of electro-optics effect observation, the width of gold strip thin film is set as 0.5mm, which is equal to the laser beam spot diameter. First, the strip pattern is printed on a commercial transparent plastic slide. The pattern transfer process from plastic slide to glass slide is performed using UV light. Once the pattern is formed on the glass substrate, gold thin film with varies thicknesses namely 30nm, 50nm and 100nm are deposited by monitoring the sputtering time; via d.c. sputtering on the glass substrate which is partly coated with the positive photoresist. The photoresist is removed by immersing the coated glass slide in acetone solution for 15 minutes, follow with DI water for three seconds in an ultrasonic bath. This yields to the establishment of gold strip thin films with dimension of width 0.5mm × length 10mm. An optimal plasmonic demodulation process is successfully acquired by using gold metal strip with thickness of 30nm and higher laser power level, namely P=1.5mW. In a conclusion, we believe that the output of this study will contribute a significant impact to the development of the plasmonic demodulator as an active device.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77747934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355035
J. Nurismaliza, A. R. Ruslinda, M. Arshad, S. Gopinath, M. F. Fatin, C. Voon, K. L. Foo, U. Hashim, R. M. Ayub
The surface properties of nanodiamonds play a decisive role in many nanodiamond applications, particularly in biological and medical applications. The surface functional groups largely determine the interactions between nanodiamonds and biomolecules. In this study, a sonication treatment of nanodiamond powder was investigated upon depositing onto silicon substrate via a spray method. The surface morphology of nanodiamond deposited on silicon was observed using a Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM), respectively. Fourier Transform Infrared Spectroscopy (FTIR) was used in order to determine the difference between unmodified nanodiamond and modified nanodiamonds with APTES upon aptamer immobilization. The aptamer modified nanodiamond can be used for development of nano electronic device for detection of biomolecules.
{"title":"Surface properties of modified nanodiamond on silicon via a spray method","authors":"J. Nurismaliza, A. R. Ruslinda, M. Arshad, S. Gopinath, M. F. Fatin, C. Voon, K. L. Foo, U. Hashim, R. M. Ayub","doi":"10.1109/RSM.2015.7355035","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355035","url":null,"abstract":"The surface properties of nanodiamonds play a decisive role in many nanodiamond applications, particularly in biological and medical applications. The surface functional groups largely determine the interactions between nanodiamonds and biomolecules. In this study, a sonication treatment of nanodiamond powder was investigated upon depositing onto silicon substrate via a spray method. The surface morphology of nanodiamond deposited on silicon was observed using a Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM), respectively. Fourier Transform Infrared Spectroscopy (FTIR) was used in order to determine the difference between unmodified nanodiamond and modified nanodiamonds with APTES upon aptamer immobilization. The aptamer modified nanodiamond can be used for development of nano electronic device for detection of biomolecules.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82055080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355014
P. Adelyn, U. Hashim, Y. Ha, M. K. Md Arshad, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo
Fabrication of Interdigitated Electrodes (IDEs) involves several processes which include oxidation, metallization and photolithography. Among these three processes, photolithography process is the most critical part in the fabrication of IDEs. Photolithography refers to the process of pattern definition by transferring the desired design patterns from a photo-mask/chrome-mask to photoresist (thin uniform layer of viscous liquid) on the wafer surface. Thus, printed transparent masks' resolution plays an important role in photolithography process. This will affect the dimension of pattern transfer to the photoresist and hence influences the functionality of IDEs indirectly due to the low resolution of the printed mask. Consequently, the dimension of IDEs' design is compared among the design in AutoCAD tool, printed mask and fabricated device.
{"title":"Transparent mask design and fabrication of interdigitated electrodes","authors":"P. Adelyn, U. Hashim, Y. Ha, M. K. Md Arshad, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo","doi":"10.1109/RSM.2015.7355014","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355014","url":null,"abstract":"Fabrication of Interdigitated Electrodes (IDEs) involves several processes which include oxidation, metallization and photolithography. Among these three processes, photolithography process is the most critical part in the fabrication of IDEs. Photolithography refers to the process of pattern definition by transferring the desired design patterns from a photo-mask/chrome-mask to photoresist (thin uniform layer of viscous liquid) on the wafer surface. Thus, printed transparent masks' resolution plays an important role in photolithography process. This will affect the dimension of pattern transfer to the photoresist and hence influences the functionality of IDEs indirectly due to the low resolution of the printed mask. Consequently, the dimension of IDEs' design is compared among the design in AutoCAD tool, printed mask and fabricated device.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75449467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355034
A. H. Azaddin, R. M. Ayub, A. H. Azman, M. K. Md Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, S. Gopinath, C. Voon, K. L. Foo
The Seebeck coefficient is a parameter to measure the efficiency of materials in generating thermoelectric voltage from certain temperature gradient. In this work, the effect of aluminum nano particle on the Seebeck coefficient for silicon based thermoelectric power generator is investigated. Thermoelectric devices which consist of arrays of doped phosphorus and boron channels have been fabricated on silicon wafers via standard CMOS fabrication processes. Aluminum nano particles were then integrated into the doped n-channel, before the fabrication step is completed with the metalization process. Temperature gradients across the two device terminals were created by resistive heating and the output voltages were measured. The results show that there is a substantial improvement in the calculated Seebeck coefficient where the device which been incorporated with 40 nm aluminum nano particles yields the average value of 3390 μV/K to that of control device which yields 784 μV/K. Furthermore, the output voltage is measured to be in the range of 40 mV for the temperature gradient of 12 K, making it to be very viable and attractive for biomedical applications.
{"title":"The effect of aluminum nanoparticle on the seebeck coefficient of biomedical thermoelectric devices","authors":"A. H. Azaddin, R. M. Ayub, A. H. Azman, M. K. Md Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, S. Gopinath, C. Voon, K. L. Foo","doi":"10.1109/RSM.2015.7355034","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355034","url":null,"abstract":"The Seebeck coefficient is a parameter to measure the efficiency of materials in generating thermoelectric voltage from certain temperature gradient. In this work, the effect of aluminum nano particle on the Seebeck coefficient for silicon based thermoelectric power generator is investigated. Thermoelectric devices which consist of arrays of doped phosphorus and boron channels have been fabricated on silicon wafers via standard CMOS fabrication processes. Aluminum nano particles were then integrated into the doped n-channel, before the fabrication step is completed with the metalization process. Temperature gradients across the two device terminals were created by resistive heating and the output voltages were measured. The results show that there is a substantial improvement in the calculated Seebeck coefficient where the device which been incorporated with 40 nm aluminum nano particles yields the average value of 3390 μV/K to that of control device which yields 784 μV/K. Furthermore, the output voltage is measured to be in the range of 40 mV for the temperature gradient of 12 K, making it to be very viable and attractive for biomedical applications.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"98 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91175785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355003
N. F. Mohd Nasir, K. A. Hassan, P. Leech, G. K. Reeves, A. Holland, Y. Wahab, M. Mazalan, P. Tanner
An array of Circular Transmission Line Model (CTLM) metal contacts was deposited onto the upper surface of the n-SiC/Si chips using laser micromachining as an alternative to standard photolithography technique. Thin epitaxial n-type 3C-SiC/Si chips were used since no current leakage observed in previous studies. Various laser energies were used for the CTLM pattern transfer. Low values of ρc were obtained such 19×10-4 Ωcm2 was produced despite of different rings' diameters at the lower laser energy strength. However, high laser penetration had caused higher contact resistances approximately 20 times. This is probably attributed to the surface degradation of 3C-SiC.
{"title":"Laser micromachining of Circular Transmission Line Model (CTLM) of Al contacts on n-type SiC/Si chips","authors":"N. F. Mohd Nasir, K. A. Hassan, P. Leech, G. K. Reeves, A. Holland, Y. Wahab, M. Mazalan, P. Tanner","doi":"10.1109/RSM.2015.7355003","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355003","url":null,"abstract":"An array of Circular Transmission Line Model (CTLM) metal contacts was deposited onto the upper surface of the n-SiC/Si chips using laser micromachining as an alternative to standard photolithography technique. Thin epitaxial n-type 3C-SiC/Si chips were used since no current leakage observed in previous studies. Various laser energies were used for the CTLM pattern transfer. Low values of ρc were obtained such 19×10-4 Ωcm2 was produced despite of different rings' diameters at the lower laser energy strength. However, high laser penetration had caused higher contact resistances approximately 20 times. This is probably attributed to the surface degradation of 3C-SiC.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"66 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82800422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355037
A. Muaz, U. Hashim, N. Azizah, M. Arshad, K. L. Foo, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon
The combination of nano/micro technology, biology and metal oxides materials have seen great advances in the development of transducers and biochips for biological and medical fields. In this work, TiO2 nanoparticles thin films were prepared using sol-gel method and annealed at 400°C to promote nanoparticles crystallization in anatase phase. The influence of surface topologies and uniformity distribution of TiO2 thin films were investigated using AFM, whereby the surface structural was determined by XRD. The conventional photo-lithography technique was applied in the fabrication of micro-gap interdigitated electrodes (IDEs) with 7 μm gap size between the adjacent fingers. This device will be employed as an electrochemical sensor to detect the bio-molecules thru electrical characteristics. The fabricated micro-gap Au/Ti IDEs gap size was further inspected using the scanning electron microscopy (SEM). Purchased pH buffer solutions which varied from pH4 to pH 12 is dropped on the micro-gap IDEs and the effect on it is investigated for the application in pH measurement.
{"title":"Integrated of IDEs with TiO2 nanoparticles thin films for pH sensor","authors":"A. Muaz, U. Hashim, N. Azizah, M. Arshad, K. L. Foo, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon","doi":"10.1109/RSM.2015.7355037","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355037","url":null,"abstract":"The combination of nano/micro technology, biology and metal oxides materials have seen great advances in the development of transducers and biochips for biological and medical fields. In this work, TiO2 nanoparticles thin films were prepared using sol-gel method and annealed at 400°C to promote nanoparticles crystallization in anatase phase. The influence of surface topologies and uniformity distribution of TiO2 thin films were investigated using AFM, whereby the surface structural was determined by XRD. The conventional photo-lithography technique was applied in the fabrication of micro-gap interdigitated electrodes (IDEs) with 7 μm gap size between the adjacent fingers. This device will be employed as an electrochemical sensor to detect the bio-molecules thru electrical characteristics. The fabricated micro-gap Au/Ti IDEs gap size was further inspected using the scanning electron microscopy (SEM). Purchased pH buffer solutions which varied from pH4 to pH 12 is dropped on the micro-gap IDEs and the effect on it is investigated for the application in pH measurement.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"21 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83223492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355017
I. H. Hasan, M. Hamidon, I. Ismail, R. Osman, S. Azhari
This paper presents results of study on Yttrium iron garnet (YIG) thick film paste using linseed oil as organic binder. YIG nanopowder is mixed with organic vehicle which consists of linseed oil, m-xylene and α-terpineol. Samples with different ratios of compositions are prepared to study the printability and adhesion properties of the paste. Paste samples were then screen printed onto alumina substrate, dried and fired at 300°C. Microscopic images of the samples were observed to determine most suitable ratio for producing YIG paste. Based on the results, YIG paste with 30 wt% ratio showed good adhesion to the substrate as well as having high dielectric property compared to pastes with lower powder ratio.
{"title":"Printability and structural analysis of Yttrium iron garnet thick film with low firing temperature","authors":"I. H. Hasan, M. Hamidon, I. Ismail, R. Osman, S. Azhari","doi":"10.1109/RSM.2015.7355017","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355017","url":null,"abstract":"This paper presents results of study on Yttrium iron garnet (YIG) thick film paste using linseed oil as organic binder. YIG nanopowder is mixed with organic vehicle which consists of linseed oil, m-xylene and α-terpineol. Samples with different ratios of compositions are prepared to study the printability and adhesion properties of the paste. Paste samples were then screen printed onto alumina substrate, dried and fired at 300°C. Microscopic images of the samples were observed to determine most suitable ratio for producing YIG paste. Based on the results, YIG paste with 30 wt% ratio showed good adhesion to the substrate as well as having high dielectric property compared to pastes with lower powder ratio.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91515767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354982
A. Huda, M. K. Md Arshad, N. Othman, C. Voon, R. M. Ayub, S. Gopinath, K. L. Foo, A. R. Ruslinda, U. Hashim, H. C. Lee, P. Adelyn, S. M. Kahar
In this paper, the effect of gate workfunction variation on electron concentration at depletion and inversion as a function of applied gate voltage for 100 nm gate length silicon-on-insulator (SOI) junctionless (JLT) and junction (JT) transistors are investigated. It shows that the JLT device is properly function and achieving full-depletion without losing gate controllability at higher gate workfunction of more than 5.0 eV whereas the designated JT device is more wider range, ranging from low, mid-gap or high workfunction.
{"title":"Electron concentration behavior in junctionless vs junction SOI n-MOSFET transistor","authors":"A. Huda, M. K. Md Arshad, N. Othman, C. Voon, R. M. Ayub, S. Gopinath, K. L. Foo, A. R. Ruslinda, U. Hashim, H. C. Lee, P. Adelyn, S. M. Kahar","doi":"10.1109/RSM.2015.7354982","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354982","url":null,"abstract":"In this paper, the effect of gate workfunction variation on electron concentration at depletion and inversion as a function of applied gate voltage for 100 nm gate length silicon-on-insulator (SOI) junctionless (JLT) and junction (JT) transistors are investigated. It shows that the JLT device is properly function and achieving full-depletion without losing gate controllability at higher gate workfunction of more than 5.0 eV whereas the designated JT device is more wider range, ranging from low, mid-gap or high workfunction.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"32 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76518331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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