Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354981
S. Farhana, A. Z. Zahirul Alam, Sheroz Khan
Modeling of high frequency carbon nanotube field-effect transistor (CNTFET) is analyzed in this paper to develop logic gate. The aim of this research is to minimize the dimension of the logic gate for the future electronic device application. The analytical models of CNTFETs are employed to model the logic gates and verify their transfer characteristics. The logic gates discussed in this paper are inverters, NOR gate and NAND gate. The high frequency response is achieved from the proposed logic gates operation analyzed from the small signal model. Finally the results show the electronic properties of carbon nanotubes (CNTs) affect the variations for the logic gate's transfer characteristics.
{"title":"High frequency CNTFET-based logic gate","authors":"S. Farhana, A. Z. Zahirul Alam, Sheroz Khan","doi":"10.1109/RSM.2015.7354981","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354981","url":null,"abstract":"Modeling of high frequency carbon nanotube field-effect transistor (CNTFET) is analyzed in this paper to develop logic gate. The aim of this research is to minimize the dimension of the logic gate for the future electronic device application. The analytical models of CNTFETs are employed to model the logic gates and verify their transfer characteristics. The logic gates discussed in this paper are inverters, NOR gate and NAND gate. The high frequency response is achieved from the proposed logic gates operation analyzed from the small signal model. Finally the results show the electronic properties of carbon nanotubes (CNTs) affect the variations for the logic gate's transfer characteristics.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"102 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76850328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354985
N. Othman, M. Arshad, S. Sabki, U. Hashim
In this work, we investigate the impact of varying silicon-body thickness, Tsi i.e 5 nm, 7 nm, 10 nm and 12 nm on the digital figures-of-merit performance of Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs of 10 nm gate length with different ground plane (GP) structures under the double-gate (DG) operation-mode. We show that degradations of the digital characteristics i.e DIBL, subthreshold-slope (SS) and Ioff occur with an increased in Tsi. Meanwhile, no significant improvement in Ion is observed with the reduction in Tsi whereas thicker Tsi produces a slightly higher transconductance, gm. In terms of the impact of different GP structures, significant variations in DIBL and SS is observed with thicker Tsi as different GP structure is employed, and these variations are gradually suppressed when Tsi is decreased. In other words, advantages of different GP structures are not significantly apparent at thinner Tsi.
在这项工作中，我们研究了不同硅体厚度Tsi(即5 nm, 7 nm, 10 nm和12 nm)对双栅极(DG)工作模式下具有不同接平面(GP)结构的10 nm栅极长度的超薄体和埋地氧化物(UTBB) SOI mosfet的数字性能的影响。我们发现，随着Tsi的增加，数字特性，即DIBL，阈值下斜率(SS)和Ioff都会发生退化。同时，随着Tsi的降低，离子没有明显的改善，而较厚的Tsi会产生稍高的跨导，gm。在不同GP结构的影响下，随着不同GP结构的使用，较厚的Tsi可以观察到DIBL和SS的显著变化，而随着Tsi的降低，这些变化会逐渐被抑制。换句话说，不同GP结构的优势在较薄的Tsi上并不明显。
{"title":"Impact of silicon-body thickness on emulation of double-gate UTBB SOI MOSFETs with different ground plane structures","authors":"N. Othman, M. Arshad, S. Sabki, U. Hashim","doi":"10.1109/RSM.2015.7354985","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354985","url":null,"abstract":"In this work, we investigate the impact of varying silicon-body thickness, Tsi i.e 5 nm, 7 nm, 10 nm and 12 nm on the digital figures-of-merit performance of Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs of 10 nm gate length with different ground plane (GP) structures under the double-gate (DG) operation-mode. We show that degradations of the digital characteristics i.e DIBL, subthreshold-slope (SS) and Ioff occur with an increased in Tsi. Meanwhile, no significant improvement in Ion is observed with the reduction in Tsi whereas thicker Tsi produces a slightly higher transconductance, gm. In terms of the impact of different GP structures, significant variations in DIBL and SS is observed with thicker Tsi as different GP structure is employed, and these variations are gradually suppressed when Tsi is decreased. In other words, advantages of different GP structures are not significantly apparent at thinner Tsi.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"16 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86858837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355033
M. Fathil, M. Arshad, U. Hashim, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo, R. Adzhri, M. Nuzaihan, A. H. Azman, M. Zaki
This paper presents the preparation and characterization of zinc oxide (ZnO) thin film prior deposition on the channel of field-effect transistor with back gate biasing (FET-BG) for biosensing application. Sol-Gel technique is a chosen method for the preparation of the ZnO seed solution, followed by the deposition process through spin coating technique on the silicon dioxide (SiO2). Prior to that, the SiO2 layer is grown on a silicon die. The ZnO seed solution is deposited at various numbers of coating layer (1, 3, and 5 coating layers), baked, and annealed prior to characterization of its surface morphological, structural, crystalline phase, and electrical characterization. The results obtained give a significant evidences for the future deposition process of the ZnO thin films as the FET-BG biosensor device on the silicon-on-insulator (SOI) wafer.
{"title":"Deposition and characterization of ZnO thin film for FET with back gate biasing-based biosensors application","authors":"M. Fathil, M. Arshad, U. Hashim, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo, R. Adzhri, M. Nuzaihan, A. H. Azman, M. Zaki","doi":"10.1109/RSM.2015.7355033","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355033","url":null,"abstract":"This paper presents the preparation and characterization of zinc oxide (ZnO) thin film prior deposition on the channel of field-effect transistor with back gate biasing (FET-BG) for biosensing application. Sol-Gel technique is a chosen method for the preparation of the ZnO seed solution, followed by the deposition process through spin coating technique on the silicon dioxide (SiO2). Prior to that, the SiO2 layer is grown on a silicon die. The ZnO seed solution is deposited at various numbers of coating layer (1, 3, and 5 coating layers), baked, and annealed prior to characterization of its surface morphological, structural, crystalline phase, and electrical characterization. The results obtained give a significant evidences for the future deposition process of the ZnO thin films as the FET-BG biosensor device on the silicon-on-insulator (SOI) wafer.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87328174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354999
R. Adzhri, M. Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo, M. Nuzaihan, A. H. Azman, M. Zaki
Titanium dioxide (TiO2) is one of a metal oxide material group that shows a promising future in biosensors application. TiO2 possess both physical and chemical resistant that can extend a device lifespan. However, etching of TiO2 with very high selectivity is a challenging process in achieving good and desired profile particularly in nanometer scale. In this work, we present the anisotropic etch profile. Three types of ICP-RIE recipes are used i.e. CF4/O2, Ar/SF6 and CF4/Ar. Prior to that, the TiO2 sol-gel is deposited on top of SiO2 layer. All the results are optically and physically characterized by using 3D-surface profilometer and atomic force microscopy (AFM) and finally followed by electrical characterization.
{"title":"Reactive Ion etching of TiO2 thin film: The impact of different gaseous","authors":"R. Adzhri, M. Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo, M. Nuzaihan, A. H. Azman, M. Zaki","doi":"10.1109/RSM.2015.7354999","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354999","url":null,"abstract":"Titanium dioxide (TiO<sub>2</sub>) is one of a metal oxide material group that shows a promising future in biosensors application. TiO<sub>2</sub> possess both physical and chemical resistant that can extend a device lifespan. However, etching of TiO<sub>2</sub> with very high selectivity is a challenging process in achieving good and desired profile particularly in nanometer scale. In this work, we present the anisotropic etch profile. Three types of ICP-RIE recipes are used i.e. CF<sub>4</sub>/O<sub>2</sub>, Ar/SF<sub>6</sub> and CF<sub>4</sub>/Ar. Prior to that, the TiO<sub>2</sub> sol-gel is deposited on top of SiO<sub>2</sub> layer. All the results are optically and physically characterized by using 3D-surface profilometer and atomic force microscopy (AFM) and finally followed by electrical characterization.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82767169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355026
H. Razak, H. Haroon, A. Zain, P. Menon, S. Shaari, W. M. Mukhtar
In recent years, there has been a significant interest in the development of optical waveguide modulators using Silicon-On-Insulator (SOI) substrates motivated by the potential to provide a reliable low-cost alternative to other photonic materials. Objective: In this paper, Multimode Interference (MMI) device is used to develop the MZI structure of the optical modulator. Meanwhile, the electrical part of the modulator utilizes the forward biased P-I-N structure. The effect of varying MMI width to the performance of the MZI optical modulator on SOI was investigated. The effect of varying MMI width to the insertion loss (IL), extinction ratio (ER) and modulation efficiency (VπL) of the device were carried out. Results: The investigated MMI widths are 22, 30 and 38 μm. Smallest MMI width, which is 22 μm has recorded the lowest value of insertion loss with 3.30 dB and the best extinction ratio of 25.60 dB. However, the best modulation efficiency was observed for the MMI width of 38 μm with 0.1696 V.cm. Conclusion: Appropriate selection of MMI width is vital to ensure optimum performance of the MZI modulator.
{"title":"On the performance of Mach-Zehnder-Interferometer (MZI) optical modulator on silicon-on-insulator (SOI)","authors":"H. Razak, H. Haroon, A. Zain, P. Menon, S. Shaari, W. M. Mukhtar","doi":"10.1109/RSM.2015.7355026","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355026","url":null,"abstract":"In recent years, there has been a significant interest in the development of optical waveguide modulators using Silicon-On-Insulator (SOI) substrates motivated by the potential to provide a reliable low-cost alternative to other photonic materials. Objective: In this paper, Multimode Interference (MMI) device is used to develop the MZI structure of the optical modulator. Meanwhile, the electrical part of the modulator utilizes the forward biased P-I-N structure. The effect of varying MMI width to the performance of the MZI optical modulator on SOI was investigated. The effect of varying MMI width to the insertion loss (IL), extinction ratio (ER) and modulation efficiency (VπL) of the device were carried out. Results: The investigated MMI widths are 22, 30 and 38 μm. Smallest MMI width, which is 22 μm has recorded the lowest value of insertion loss with 3.30 dB and the best extinction ratio of 25.60 dB. However, the best modulation efficiency was observed for the MMI width of 38 μm with 0.1696 V.cm. Conclusion: Appropriate selection of MMI width is vital to ensure optimum performance of the MZI modulator.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"48 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83247413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355038
A. Muaz, U. Hashim, N. Azizah, M. K. Md Arshad, K. L. Foo, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon
Nanocrystalline TiO2 anatase thin films have been prepared from alkoxide solution via sol-gel method. The effects of two protic solvents of methanol and ethanol of TiO2 thin films were systematically investigated under room temperature. The films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet spectroscopy (UV-vis), current-voltage (I-V) and capacitance-frequency (C-F) test. The structure growth, morphological, optical and electrical characteristic of the TiO2 thin films were influenced by different factors such as dielectric constant, film thickness, and particle size. XRD confirmed the presence of tetragonal anatase phase in all samples after annealed at 400°C. Furthermore, it was inferred from UV-visible transmittance spectra that although band-gap energy of the films are independent of solvent type, the particle size, film thickness, crystallinity and electrical measurement (I-V and C-F test) of the films are highly affected by the type of solvents.
{"title":"TiO2 anatase phase structure growth, morphological optical and electrical characterization by different alcoholic solvents","authors":"A. Muaz, U. Hashim, N. Azizah, M. K. Md Arshad, K. L. Foo, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon","doi":"10.1109/RSM.2015.7355038","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355038","url":null,"abstract":"Nanocrystalline TiO2 anatase thin films have been prepared from alkoxide solution via sol-gel method. The effects of two protic solvents of methanol and ethanol of TiO2 thin films were systematically investigated under room temperature. The films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet spectroscopy (UV-vis), current-voltage (I-V) and capacitance-frequency (C-F) test. The structure growth, morphological, optical and electrical characteristic of the TiO2 thin films were influenced by different factors such as dielectric constant, film thickness, and particle size. XRD confirmed the presence of tetragonal anatase phase in all samples after annealed at 400°C. Furthermore, it was inferred from UV-visible transmittance spectra that although band-gap energy of the films are independent of solvent type, the particle size, film thickness, crystallinity and electrical measurement (I-V and C-F test) of the films are highly affected by the type of solvents.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86139275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354979
S. Rasidah, M. H. Siti Maisurah, E. F. Nazif, K. Norhapizin, A. Rahim
High quality factor, Q of inductor operates at high frequency and baseband is reported in this paper. These inductors are design for mm-wave RoF application that compatible with matured CMOS13 technology established by Silterra, Malaysia. In this paper, spiral inductor structure with metal 1 layers of ground shield is presented. Spiral inductor with multiple layers of ground shield using CMOS13 technology helps the IC designer boost up the performance of mm-wave circuit, like LNA, PA and Mixer. And it's compatibility in RoF system will extend the communication system to a higher level without worry the passive device resonance at higher frequency. The inductor surrounded by metal 1 ground shield structure is design to sustain its performance at higher frequency with low loss effect. The inductor performance was finally described through S-parameter measurement.
{"title":"The design of ground shield spiral inductor using 0.13 μm CMOS technology for millimeter-wave radio over fiber applications","authors":"S. Rasidah, M. H. Siti Maisurah, E. F. Nazif, K. Norhapizin, A. Rahim","doi":"10.1109/RSM.2015.7354979","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354979","url":null,"abstract":"High quality factor, Q of inductor operates at high frequency and baseband is reported in this paper. These inductors are design for mm-wave RoF application that compatible with matured CMOS13 technology established by Silterra, Malaysia. In this paper, spiral inductor structure with metal 1 layers of ground shield is presented. Spiral inductor with multiple layers of ground shield using CMOS13 technology helps the IC designer boost up the performance of mm-wave circuit, like LNA, PA and Mixer. And it's compatibility in RoF system will extend the communication system to a higher level without worry the passive device resonance at higher frequency. The inductor surrounded by metal 1 ground shield structure is design to sustain its performance at higher frequency with low loss effect. The inductor performance was finally described through S-parameter measurement.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"578 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78928998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355019
M. A. Baqir, P. Choudhury
The paper reports sensing aspects of measurands by implementing the concept of surface plasmon resonance (SPR) that occurs at the metal-dielectric interface under proper incidence light conditions. For this purpose, the prism-coupled waveguide configuration is used. As to the metallic partner, nanolayers of silver and gold are taken into account, and the aqueous solutions of measurand with different concentrations are considered as the dielectric partner. As such, the set-up essentially uses the Turbadar-Kretschmann-Raether (TKR) kind of configuration to theoretically determine the concentration of sucrose solution. Moreover, the performance of sensors has been evaluated under the implementation of both silver as well as gold nanolayers through comparing the sensitivity in these situations. Theoretical investigations determine that the configuration with the use of gold becomes more sensitive as compared to the case when silver nanolayer remains in use.
{"title":"On the SPR-based optical biosensors","authors":"M. A. Baqir, P. Choudhury","doi":"10.1109/RSM.2015.7355019","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355019","url":null,"abstract":"The paper reports sensing aspects of measurands by implementing the concept of surface plasmon resonance (SPR) that occurs at the metal-dielectric interface under proper incidence light conditions. For this purpose, the prism-coupled waveguide configuration is used. As to the metallic partner, nanolayers of silver and gold are taken into account, and the aqueous solutions of measurand with different concentrations are considered as the dielectric partner. As such, the set-up essentially uses the Turbadar-Kretschmann-Raether (TKR) kind of configuration to theoretically determine the concentration of sucrose solution. Moreover, the performance of sensors has been evaluated under the implementation of both silver as well as gold nanolayers through comparing the sensitivity in these situations. Theoretical investigations determine that the configuration with the use of gold becomes more sensitive as compared to the case when silver nanolayer remains in use.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80978998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/rsm.2015.7355013
S. M. Kahar, C. Voon, U. Hashim, M. Arshad, A. R. Ruslinda, P. Adelyn, A. Huda, H. C. Lee, C. C. Lee, W. Rahman, B. Y. Lim
Silicon carbide (SiC) is an important ceramic for engineering and industrial applications in harsh conditions of high temperature oxidative environment. For the synthesis of SiC in manufacturing process, conventional heating process is commonly used. In this study, SiC nanowhiskers are synthesized by microwave heating from mixture of graphite and silica. Graphite and silica in the ratio of 3:1 were mixed in ultrasonic bath using ethanol as medium for one hour. The mixture was then dried on hotplate and cold pressed uniaxially into a pellet die. The pellet was then heated by using laboratory microwaves oven to 1400°C at heating rate of 20°C /min and temperature was kept for 30 minutes. Scanning electron microscopy (SEM) showed that SiC nanowhiskers were successfully synthesized. X-ray diffraction (XRD) pattern indicated SiC phase was present after the mixture of graphite and silicon dioxide (SiO2) were exposed to microwave irradiation. Electron microscopy analysis showed that the SiC formed was in the form of nanowhiskers.
{"title":"Microwave irradiation assisted synthesis of silicon carbide nanowhiskers","authors":"S. M. Kahar, C. Voon, U. Hashim, M. Arshad, A. R. Ruslinda, P. Adelyn, A. Huda, H. C. Lee, C. C. Lee, W. Rahman, B. Y. Lim","doi":"10.1109/rsm.2015.7355013","DOIUrl":"https://doi.org/10.1109/rsm.2015.7355013","url":null,"abstract":"Silicon carbide (SiC) is an important ceramic for engineering and industrial applications in harsh conditions of high temperature oxidative environment. For the synthesis of SiC in manufacturing process, conventional heating process is commonly used. In this study, SiC nanowhiskers are synthesized by microwave heating from mixture of graphite and silica. Graphite and silica in the ratio of 3:1 were mixed in ultrasonic bath using ethanol as medium for one hour. The mixture was then dried on hotplate and cold pressed uniaxially into a pellet die. The pellet was then heated by using laboratory microwaves oven to 1400°C at heating rate of 20°C /min and temperature was kept for 30 minutes. Scanning electron microscopy (SEM) showed that SiC nanowhiskers were successfully synthesized. X-ray diffraction (XRD) pattern indicated SiC phase was present after the mixture of graphite and silicon dioxide (SiO2) were exposed to microwave irradiation. Electron microscopy analysis showed that the SiC formed was in the form of nanowhiskers.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"30 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80009169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354977
H. E. Z. Abidin, A. A. Hamzah, M. A. Mohamed, B. Majlis, Noraini Marsi
This paper discusses electrical performances of the micro supercapacitor such as cyclic voltammetry and charge discharge between two different structure of electrodes. The microsupercapacitor was constructed of Polypyrrole (Ppy) coated nickel electrode as current collector and polyvinyl alcohol (PVA) as solid state electrolyte. The electrochemical performances of the microsupercapacitor such as cyclic voltammetry also typically known as I-V curve and a typical time based charge discharge curve were investigated with different structured of electrode which is interdigital electrode and planar electrode for the same layout. In Comsol Multiphysics ver. 4.2a, the Secondary Current Distribution and Transport of Diluted Species has been selected as the Application module. I-V curve for the micro supercapacitor with the two structured of electrodes was simulated. The transport of a reduced and an oxidized species is described by time-dependent mass transfer principles for diffusion under dilute conditions. The maximum current response for the interdigital electrode is 5.5 A/m and for the planar electrode is 0.025 A/m. For the interdigital electrode, the maximum voltan achieved at 0.5 V same for the planar electrode with different time. Discharging process for interdigital and planar electrode occurred when the value of voltage decreasing and back to zero at 1s and 10 s respectively.
{"title":"Electrical performances based on two different structured of micro supercapacitor electrodes","authors":"H. E. Z. Abidin, A. A. Hamzah, M. A. Mohamed, B. Majlis, Noraini Marsi","doi":"10.1109/RSM.2015.7354977","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354977","url":null,"abstract":"This paper discusses electrical performances of the micro supercapacitor such as cyclic voltammetry and charge discharge between two different structure of electrodes. The microsupercapacitor was constructed of Polypyrrole (Ppy) coated nickel electrode as current collector and polyvinyl alcohol (PVA) as solid state electrolyte. The electrochemical performances of the microsupercapacitor such as cyclic voltammetry also typically known as I-V curve and a typical time based charge discharge curve were investigated with different structured of electrode which is interdigital electrode and planar electrode for the same layout. In Comsol Multiphysics ver. 4.2a, the Secondary Current Distribution and Transport of Diluted Species has been selected as the Application module. I-V curve for the micro supercapacitor with the two structured of electrodes was simulated. The transport of a reduced and an oxidized species is described by time-dependent mass transfer principles for diffusion under dilute conditions. The maximum current response for the interdigital electrode is 5.5 A/m and for the planar electrode is 0.025 A/m. For the interdigital electrode, the maximum voltan achieved at 0.5 V same for the planar electrode with different time. Discharging process for interdigital and planar electrode occurred when the value of voltage decreasing and back to zero at 1s and 10 s respectively.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"29 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81744242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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