Pub Date : 2015-12-11DOI: 10.1109/RSM.2015.7354989
A. H. Afifah Maheran, P. Menon, S. Shaari, I. Ahmad, Z. A. Noor Faizah
This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using Taguchi's Signal-to-noise ratio (SNR) of nominal-the-best (NTB), the compensation implantation has been as identified as the dominant factor influencing the Vth value with 67.77% while the Halo implantation tilting angle has been identified as the adjustment factor. Upon optimization, the Vth value is -0.29538 V which is within the requirements of the International Technology Roadmap for Semiconductors (ITRS) 2012 which is -0.289 V ± 12.7 %.
{"title":"Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method","authors":"A. H. Afifah Maheran, P. Menon, S. Shaari, I. Ahmad, Z. A. Noor Faizah","doi":"10.1109/RSM.2015.7354989","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354989","url":null,"abstract":"This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using Taguchi's Signal-to-noise ratio (SNR) of nominal-the-best (NTB), the compensation implantation has been as identified as the dominant factor influencing the Vth value with 67.77% while the Halo implantation tilting angle has been identified as the adjustment factor. Upon optimization, the Vth value is -0.29538 V which is within the requirements of the International Technology Roadmap for Semiconductors (ITRS) 2012 which is -0.289 V ± 12.7 %.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"30 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81736759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355041
S. Azhari, M. Hamidon, K. I. Usman, I. H. Hasan, I. Ismail, K. Nicodemus
Highly graphitized nucleophilic group functionalized Multiwall carbon nanotubes are utilized to fabricate PDMS/FMWCNTs nanocomposites with low weight fraction (0.1 wt%). The effect of solvents on dispersion of FMWCNTs is studied. THF shows higher dispersion power in comparison with chloroform. The dielectric constant is measured using impedance analyzer in the range of 106-109 Hz. The result indicate, the dielectric property of FMWCNTs/PDMS nanocomposite could be manipulated with proper mixing techniques and adjustment of curing time.
{"title":"Effect of aggregation on dielectric property of MWCNT/PDMS nanocomposite","authors":"S. Azhari, M. Hamidon, K. I. Usman, I. H. Hasan, I. Ismail, K. Nicodemus","doi":"10.1109/RSM.2015.7355041","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355041","url":null,"abstract":"Highly graphitized nucleophilic group functionalized Multiwall carbon nanotubes are utilized to fabricate PDMS/FMWCNTs nanocomposites with low weight fraction (0.1 wt%). The effect of solvents on dispersion of FMWCNTs is studied. THF shows higher dispersion power in comparison with chloroform. The dielectric constant is measured using impedance analyzer in the range of 106-109 Hz. The result indicate, the dielectric property of FMWCNTs/PDMS nanocomposite could be manipulated with proper mixing techniques and adjustment of curing time.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"44 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78235799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355039
N. Kure, M. Hamidon, S. Azhari, K. I. Usman, I. H. Hasan, I. Ismail
Advances in the synthesis of carbon nanotubes (CNTs) have emerged as a result of the properties and potential application of carbon nanotubes. We demonstrated a simple approach of using domestic microwave oven with 600W at 2.45 GHz which was modified to produce CNTs from a carbon source on coated silicon oxide substrate. The Raman spectroscopy showed the graphitic nature of the obtained CNTs, with intensity ratio ID/IG calculated to be 0.92. Field emission scanning electron microscope (FESEM) reveals CNTs are produced on the substrate surface with outer diameter range of 11-44 nm and length of about 0.25 μm. HRTEM further confirmed the graphitic nature of the CNTs obtained. The purity of the nanotubes was analyzed with energy dispersive x-ray (EDX) which showed atomic weight of 98% carbon purity. This paper shows that domestic microwave oven can be used to synthesize CNTs with polymer as the carbon source via plasma catalytic decomposition which was found to be fast, economical and clean technique.
{"title":"Synthesis of carbon nanotubes using microwave oven","authors":"N. Kure, M. Hamidon, S. Azhari, K. I. Usman, I. H. Hasan, I. Ismail","doi":"10.1109/RSM.2015.7355039","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355039","url":null,"abstract":"Advances in the synthesis of carbon nanotubes (CNTs) have emerged as a result of the properties and potential application of carbon nanotubes. We demonstrated a simple approach of using domestic microwave oven with 600W at 2.45 GHz which was modified to produce CNTs from a carbon source on coated silicon oxide substrate. The Raman spectroscopy showed the graphitic nature of the obtained CNTs, with intensity ratio ID/IG calculated to be 0.92. Field emission scanning electron microscope (FESEM) reveals CNTs are produced on the substrate surface with outer diameter range of 11-44 nm and length of about 0.25 μm. HRTEM further confirmed the graphitic nature of the CNTs obtained. The purity of the nanotubes was analyzed with energy dispersive x-ray (EDX) which showed atomic weight of 98% carbon purity. This paper shows that domestic microwave oven can be used to synthesize CNTs with polymer as the carbon source via plasma catalytic decomposition which was found to be fast, economical and clean technique.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81903167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354998
M. Said, J. Yunas, B. Majlis, B. Bais
A study of synthesization and magnetic properties of cured polymer composite on nickel (Ni) and neodymium (NdFeB) as an actuator membrane to build a micropump for biotechnology instrumentation is prepared in this work. A soft polymeric material such as polydemethilsiloxane (PDMS) and SU8 3050 are used to be mixed with magnetic nanoparticles Ni and NdFeB to produce a composite material. The mixing process is done by using mechanical stirrer with the speed of 1000rpm. In this work, an easy sol-gel method is selected to embed magnetic particles into the polymer matrix. Characterization of particle distribution is observed by metallurgical microscopy and scanning electron microscope (SEM). It is observed that the spreading of magnetic particles inside the polymer chain are constant without clustering effects. Magnetization curves of each sample are traced at room temperature using vibration sample magnetometer (VSM). Good compromising magnetic properties with patternable high aspect ratio structures have been successfully fabricated using a standard MEMS process for an actuator micropump in biomedical application.
{"title":"Synthesis and characterization of neodymium and nickel particles in polymer base actuator","authors":"M. Said, J. Yunas, B. Majlis, B. Bais","doi":"10.1109/RSM.2015.7354998","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354998","url":null,"abstract":"A study of synthesization and magnetic properties of cured polymer composite on nickel (Ni) and neodymium (NdFeB) as an actuator membrane to build a micropump for biotechnology instrumentation is prepared in this work. A soft polymeric material such as polydemethilsiloxane (PDMS) and SU8 3050 are used to be mixed with magnetic nanoparticles Ni and NdFeB to produce a composite material. The mixing process is done by using mechanical stirrer with the speed of 1000rpm. In this work, an easy sol-gel method is selected to embed magnetic particles into the polymer matrix. Characterization of particle distribution is observed by metallurgical microscopy and scanning electron microscope (SEM). It is observed that the spreading of magnetic particles inside the polymer chain are constant without clustering effects. Magnetization curves of each sample are traced at room temperature using vibration sample magnetometer (VSM). Good compromising magnetic properties with patternable high aspect ratio structures have been successfully fabricated using a standard MEMS process for an actuator micropump in biomedical application.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"20 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84310509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354975
Farah Fatin Zulkifli, J. Sampe, Mohd Shabiul Islam, M. A. Mohamed, Shafii A. Wahab
This paper presents an optimization of the rectifier module for Radio Frequency (RF) energy harvesting system at 915 MHz band. This module converts the RF signal into direct-current voltage at the given frequency band to power ultra-low power bio-medical sensor. A transient analysis on various types of rectifier circuit is carried out to investigate their efficiency and sensitivity. To improve the power conversion efficiency, the voltage boosting network increases the voltage at the input of the full wave rectifier. By assuming the system is at resonance condition, the optimum parameters including the value of capacitance, inductance and load value are calculated. Simulation results show that passive component based circuit can significantly increase the RF input voltage and broaden the input range of the rectifier. The modified circuit enhances output voltage approximately 400 mV higher than output voltage from existing full wave rectifier at same level of input. This will help to increase the input range to be converted to dc output.
{"title":"Optimization of RF- DC converter in micro energy harvester using voltage boosting network and bulk modulation technique for biomedical devices","authors":"Farah Fatin Zulkifli, J. Sampe, Mohd Shabiul Islam, M. A. Mohamed, Shafii A. Wahab","doi":"10.1109/RSM.2015.7354975","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354975","url":null,"abstract":"This paper presents an optimization of the rectifier module for Radio Frequency (RF) energy harvesting system at 915 MHz band. This module converts the RF signal into direct-current voltage at the given frequency band to power ultra-low power bio-medical sensor. A transient analysis on various types of rectifier circuit is carried out to investigate their efficiency and sensitivity. To improve the power conversion efficiency, the voltage boosting network increases the voltage at the input of the full wave rectifier. By assuming the system is at resonance condition, the optimum parameters including the value of capacitance, inductance and load value are calculated. Simulation results show that passive component based circuit can significantly increase the RF input voltage and broaden the input range of the rectifier. The modified circuit enhances output voltage approximately 400 mV higher than output voltage from existing full wave rectifier at same level of input. This will help to increase the input range to be converted to dc output.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"51 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76809061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355006
K. S. Rahman, N. Khan, M. Imamzai, M. Akhtaruzzaman, K. Sopian, Z. Alothman, N. Amin
Firstly, Cadmium Telluride (CdTe) thin films have been deposited on cleaned soda lime glass substrates at 300°C by using the RF magnetron sputtering technique. After that, Cu thin film was deposited for 5 minutes at 200°C on top of CdCl2 treated CdTe thin films by sputtering. Subsequently, CdTe and Cu stacks were annealed at 400°C for 15 minutes, 20 minutes and 25 minutes in a vacuum furnace. The influence of different annealing times on the structural, topographical and electrical properties of Cu sputtered CdTe thin films were then examined by XRD, AFM and Hall Effect measurement, respectively. XRD patterns reveal that, one CdTe peak corresponding to the (111)cub reflection planes at 2θ=23.8o and another low intensity Cu2Te peak representing (200)hex hexagonal reflection planes at around 2θ=24.8o were found for all the annealing times. Surface roughness and topography were viewed from the AFM images. Noteworthy changes were observed in the films surface roughness due to the different annealing times. The surface roughness values imply rising trend for lower annealing times. Bulk carrier density was in the order of 1018cm-3. The highest carrier concentration of 7.1×1018cm-3 was achieved for the films annealed for 15 min.
{"title":"Investigation of the annealing time effects on Cu deposited CdTe thin films for photovoltaic application","authors":"K. S. Rahman, N. Khan, M. Imamzai, M. Akhtaruzzaman, K. Sopian, Z. Alothman, N. Amin","doi":"10.1109/RSM.2015.7355006","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355006","url":null,"abstract":"Firstly, Cadmium Telluride (CdTe) thin films have been deposited on cleaned soda lime glass substrates at 300°C by using the RF magnetron sputtering technique. After that, Cu thin film was deposited for 5 minutes at 200°C on top of CdCl<sub>2</sub> treated CdTe thin films by sputtering. Subsequently, CdTe and Cu stacks were annealed at 400°C for 15 minutes, 20 minutes and 25 minutes in a vacuum furnace. The influence of different annealing times on the structural, topographical and electrical properties of Cu sputtered CdTe thin films were then examined by XRD, AFM and Hall Effect measurement, respectively. XRD patterns reveal that, one CdTe peak corresponding to the (111)cub reflection planes at 2θ=23.8<sup>o</sup> and another low intensity Cu<sub>2</sub>Te peak representing (200)<sup>hex</sup> hexagonal reflection planes at around 2θ=24.8<sup>o</sup> were found for all the annealing times. Surface roughness and topography were viewed from the AFM images. Noteworthy changes were observed in the films surface roughness due to the different annealing times. The surface roughness values imply rising trend for lower annealing times. Bulk carrier density was in the order of 10<sup>18</sup>cm<sup>-3</sup>. The highest carrier concentration of 7.1×10<sup>18</sup>cm<sup>-3</sup> was achieved for the films annealed for 15 min.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"49 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83243941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355040
K. I. Usman, M. Hamidon, N. Yusof, S. Azhari, I. H. Hasan, K. Nicodemus, Siti Fatimah Abd Rahman
Detection and quantification of biological and chemical species are critical to many areas of the life sciences and health care, from disease diagnosis to drug screening. Central to detection is the transduction of the signal associated with the sensing event. Advances in nanotechnology have led to the development of the silicon nanowire which is faster, smaller, greener and cheaper. These nanowires have a very narrow diameter similar to that of the chemical and biological species to be sensed making them perfectly suited for biosensing. The top-down fabricated silicon nanowires is used in this work due to its oxide-coated surface and ease of integration with other microelectronic components. Due to the ultra-small output signal of the nanowire, bulky equipments which are often time consuming and expensive are used for reading the signal. This work attempts to build a circuit that can be interfaced with the nanowire to make the signal readable hence the sensor will become portable thereby increasing its utility to being a point-of-care and field-testing device.
{"title":"Silicon nanowire interface circuit for biosensing applications","authors":"K. I. Usman, M. Hamidon, N. Yusof, S. Azhari, I. H. Hasan, K. Nicodemus, Siti Fatimah Abd Rahman","doi":"10.1109/RSM.2015.7355040","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355040","url":null,"abstract":"Detection and quantification of biological and chemical species are critical to many areas of the life sciences and health care, from disease diagnosis to drug screening. Central to detection is the transduction of the signal associated with the sensing event. Advances in nanotechnology have led to the development of the silicon nanowire which is faster, smaller, greener and cheaper. These nanowires have a very narrow diameter similar to that of the chemical and biological species to be sensed making them perfectly suited for biosensing. The top-down fabricated silicon nanowires is used in this work due to its oxide-coated surface and ease of integration with other microelectronic components. Due to the ultra-small output signal of the nanowire, bulky equipments which are often time consuming and expensive are used for reading the signal. This work attempts to build a circuit that can be interfaced with the nanowire to make the signal readable hence the sensor will become portable thereby increasing its utility to being a point-of-care and field-testing device.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90417554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354995
Sabuhi Ganiyev, N. Muridan, N. Hasbullah, Y. Abdullah
In this paper simulation on the effects of low energy electron radiation and high temperature on the current-voltage (I-V) characteristics of Ni/4H-SiC Schottky diode were investigated. I-V characteristics of the Ni/4H-SiC Schottky diode were simulated based on thermionic emission theory using Silvaco Atlas Technology-computer-aided-design (TCAD) simulation tool. It was found the decrease in the forward bias (FB) current at high voltages is due to the increase of series resistance. However, reverse bias (RB) current did not change after radiation. From the temperature dependence I-V ranging from temperature range of 298-448 Kelvin (K), the schottky barrier height Φb, saturation current Is and series resistance Rs are found to be temperature dependent, while ideality factor n remained constant.
{"title":"Electrical simulation of Ni/4H-SiC Schottky diodes before and after low energy electron radiation","authors":"Sabuhi Ganiyev, N. Muridan, N. Hasbullah, Y. Abdullah","doi":"10.1109/RSM.2015.7354995","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354995","url":null,"abstract":"In this paper simulation on the effects of low energy electron radiation and high temperature on the current-voltage (I-V) characteristics of Ni/4H-SiC Schottky diode were investigated. I-V characteristics of the Ni/4H-SiC Schottky diode were simulated based on thermionic emission theory using Silvaco Atlas Technology-computer-aided-design (TCAD) simulation tool. It was found the decrease in the forward bias (FB) current at high voltages is due to the increase of series resistance. However, reverse bias (RB) current did not change after radiation. From the temperature dependence I-V ranging from temperature range of 298-448 Kelvin (K), the schottky barrier height Φb, saturation current Is and series resistance Rs are found to be temperature dependent, while ideality factor n remained constant.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"78 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79232805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7354984
N. Othman, M. Arshad, S. Sabki, U. Hashim
In this work, we investigate the impact of using different gate dielectric materials i.e HfO2 and Si3N4 as compared to the conventional SiO2 with equivalent oxide thickness (EOT) of 1.2 nm on the digital and analog performance of UTBB SOI MOSFETs of 10 nm gate length with different ground plane (GP) structures under the double-gate (DG) operation-mode by numerical simulations. It is found that Si3N4 provides good digital and analog performance in terms of lower DIBL and higher voltage gain, Av. Meanwhile, GP-A structure which employed p+ doping under the source and drain regions beneath the BOX is able to provide not only high Av but also a stable gain throughout the frequency range as compared to other GP structures. Thus, the configuration of GP-A structure with Si3N4 as the high-k materials is proposed for the design of analog and RF circuits.
在这项工作中，我们通过数值模拟研究了在双栅极(DG)工作模式下，使用不同栅极介电材料(HfO2和Si3N4)与传统等效氧化厚度(EOT)为1.2 nm的SiO2相比，对10 nm栅极长度、不同接平面(GP)结构的UTBB SOI mosfet的数字和模拟性能的影响。发现Si3N4在较低的DIBL和较高的电压增益Av方面具有良好的数字和模拟性能。同时，与其他GP结构相比，在BOX下面的源极和漏极区掺杂p+的GP- a结构不仅能够提供高Av，而且在整个频率范围内具有稳定的增益。因此，提出了以Si3N4为高k材料的GP-A结构配置，用于模拟电路和射频电路的设计。
{"title":"Impact of high-k dielectric on the digital and analog performance on emulation of double-gate UTBB SOI MOSFETs with different ground plane structures","authors":"N. Othman, M. Arshad, S. Sabki, U. Hashim","doi":"10.1109/RSM.2015.7354984","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354984","url":null,"abstract":"In this work, we investigate the impact of using different gate dielectric materials i.e HfO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> as compared to the conventional SiO<sub>2</sub> with equivalent oxide thickness (EOT) of 1.2 nm on the digital and analog performance of UTBB SOI MOSFETs of 10 nm gate length with different ground plane (GP) structures under the double-gate (DG) operation-mode by numerical simulations. It is found that Si<sub>3</sub>N<sub>4</sub> provides good digital and analog performance in terms of lower DIBL and higher voltage gain, A<sub>v</sub>. Meanwhile, GP-A structure which employed p+ doping under the source and drain regions beneath the BOX is able to provide not only high A<sub>v</sub> but also a stable gain throughout the frequency range as compared to other GP structures. Thus, the configuration of GP-A structure with Si<sub>3</sub>N<sub>4</sub> as the high-k materials is proposed for the design of analog and RF circuits.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87398380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RSM.2015.7355005
N. Khan, K. S. Rahman, T. H. Chowdhury, K. Sopian, A. Ali, M. Alam, N. Amin
Laser annealing of CdTe thin films with two different wavelengths has been studied in this work. The CdTe thin films were grown by thermal evaporation at a deposition current of 28A and then subjected to post deposition laser annealing at two different wavelengths of 532nm (green) and 1064nm + 532nm (infrared + green). The other parameters like laser output energy, stage velocity and pulse repetition rate were kept fixed. The analyses were carried out using XRD, AFM, UV-Vis and Hall Effect Measurement system. XRD showed polycrystalline nature for all the films. AFM revealed that laser annealing didn't change the `Sq' roughness of the films significantly. The UV-Vis analysis depicted significant changes in band gap for both the laser annealed films, `T1' and `T2' on the other hand bulk concentration changed slightly upon laser annealing. FESEM images revealed the change in grain size when laser annealing was done on the CdTe thin films.
{"title":"Influence of laser wavelength variation on the laser annealed CdTe thin films grown by thermal evaporation","authors":"N. Khan, K. S. Rahman, T. H. Chowdhury, K. Sopian, A. Ali, M. Alam, N. Amin","doi":"10.1109/RSM.2015.7355005","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355005","url":null,"abstract":"Laser annealing of CdTe thin films with two different wavelengths has been studied in this work. The CdTe thin films were grown by thermal evaporation at a deposition current of 28A and then subjected to post deposition laser annealing at two different wavelengths of 532nm (green) and 1064nm + 532nm (infrared + green). The other parameters like laser output energy, stage velocity and pulse repetition rate were kept fixed. The analyses were carried out using XRD, AFM, UV-Vis and Hall Effect Measurement system. XRD showed polycrystalline nature for all the films. AFM revealed that laser annealing didn't change the `Sq' roughness of the films significantly. The UV-Vis analysis depicted significant changes in band gap for both the laser annealed films, `T1' and `T2' on the other hand bulk concentration changed slightly upon laser annealing. FESEM images revealed the change in grain size when laser annealing was done on the CdTe thin films.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"74 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88503505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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