Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8981220
G. Bradshaw, M. Kacharia, E. Kessler-Lewis, D. Wilt, S. Polly, C. Mann, H. Kum, S. Hubbard
GaInP/(In)GaAs/Ge multijunction solar cells have been state-of-practice for power generation on spacecraft for over a decade but there are still potential improvements for endof-life (EOL) efficiency. Radiative coupling between GaInP and (In)GaAs subcells is not typically considered in the EOL design of space solar cells because radiative recombination in the GaInP is effectively quenched by radiation-induced damage. This paper shows that quantum well structures incorporated into a GaInP subcell may be less sensitive to radiation damage, thereby enabling radiative coupling between subcells at EOL and providing a current boost in the (In)GaAs subcell to improve EOL efficiency.
{"title":"Investigation of Radiative Coupling from InGaAsP Quantum Wells for Improving End-of-Life (EOL) Efficiency in Multijunction Solar Cells","authors":"G. Bradshaw, M. Kacharia, E. Kessler-Lewis, D. Wilt, S. Polly, C. Mann, H. Kum, S. Hubbard","doi":"10.1109/PVSC40753.2019.8981220","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8981220","url":null,"abstract":"GaInP/(In)GaAs/Ge multijunction solar cells have been state-of-practice for power generation on spacecraft for over a decade but there are still potential improvements for endof-life (EOL) efficiency. Radiative coupling between GaInP and (In)GaAs subcells is not typically considered in the EOL design of space solar cells because radiative recombination in the GaInP is effectively quenched by radiation-induced damage. This paper shows that quantum well structures incorporated into a GaInP subcell may be less sensitive to radiation damage, thereby enabling radiative coupling between subcells at EOL and providing a current boost in the (In)GaAs subcell to improve EOL efficiency.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"11 1","pages":"2385-2389"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87782368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980573
C. Jiang, J. Moseley, C. Xiao, S. Harvey, E. Colegrove, W. Metzger, M. Al‐Jassim
We report nanometer-scale imaging of active carrier distribution of As-doped CdTe films by scanning capacitance microscopy (SCM). We developed SCM sample preparation for CdTe by ion-milling followed by thermal processing. The nanometer-resolution carrier delineation for CdTe was validated by imaging on a CdTe cross-section sample made by a molecular beam epitaxy layer stack with As-doping concentrations of 1015~1018/cm3. We found that the carrier distribution in As-doped films was significantly nonuniform, with inhomogeneity ranging from sub-μm to a few μm and concentration variation of one order of magnitude (low 1016 to low 1017/cm3). This nonuniformity is distributed randomly, independent of grain structure and grain boundary (GB). We used Kelvin probe force microscopy (KPFM) and cathodoluminescence (CL) to further map the surface potential and radiative illumination on the same area as the SCM image. Higher potential and lower CL intensity were found on GBs but not on SCM contrast, illustrating positive GB charging and GB recombination but not GB-distinguished doping. The overall KPFM potential image is in rough agreement with the SCM carrier distribution, in terms of Fermi-level position relative to the bandgap edge—thus resulting in the band-edge potential fluctuation. Nonuniform carrier concentration, potential fluctuation, and defect recombination can all together cause the Voc deficit of the As-doped CdTe device.
{"title":"Nanometer-Scale Imaging of Inhomogeneous Active Charge Carriers in Arsenic-Doped CdTe Thin Films","authors":"C. Jiang, J. Moseley, C. Xiao, S. Harvey, E. Colegrove, W. Metzger, M. Al‐Jassim","doi":"10.1109/PVSC40753.2019.8980573","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980573","url":null,"abstract":"We report nanometer-scale imaging of active carrier distribution of As-doped CdTe films by scanning capacitance microscopy (SCM). We developed SCM sample preparation for CdTe by ion-milling followed by thermal processing. The nanometer-resolution carrier delineation for CdTe was validated by imaging on a CdTe cross-section sample made by a molecular beam epitaxy layer stack with As-doping concentrations of 1015~1018/cm3. We found that the carrier distribution in As-doped films was significantly nonuniform, with inhomogeneity ranging from sub-μm to a few μm and concentration variation of one order of magnitude (low 1016 to low 1017/cm3). This nonuniformity is distributed randomly, independent of grain structure and grain boundary (GB). We used Kelvin probe force microscopy (KPFM) and cathodoluminescence (CL) to further map the surface potential and radiative illumination on the same area as the SCM image. Higher potential and lower CL intensity were found on GBs but not on SCM contrast, illustrating positive GB charging and GB recombination but not GB-distinguished doping. The overall KPFM potential image is in rough agreement with the SCM carrier distribution, in terms of Fermi-level position relative to the bandgap edge—thus resulting in the band-edge potential fluctuation. Nonuniform carrier concentration, potential fluctuation, and defect recombination can all together cause the Voc deficit of the As-doped CdTe device.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"14 1","pages":"0786-0790"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88401539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980757
Ryo Kozono, Sanji Yoon, Jianbo Liang, N. Shigekawa
A GaAs/Si double-junction cell is fabricated by directly bonding a GaAs single-junction cell structure grown on a GaAs (001) substrate to a n-on-p Si sub-cell and separating the GaAs substrate using a sacrificial layer etching. Before the sacrificial layer etching, the III-V/Si junction is annealed at 300 ℃ for 1 hour so as to recrystallize the interface and achieve an enough bonding strength based on the results of hard X-ray photoemission spectroscopy. We obtain a bonding yield of ~80% after the sacrificial layer etching. We confirm that the fabricated double-junction cell normally operates by measuring its current-voltage and spectral-response characteristics.
{"title":"GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions","authors":"Ryo Kozono, Sanji Yoon, Jianbo Liang, N. Shigekawa","doi":"10.1109/PVSC40753.2019.8980757","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980757","url":null,"abstract":"A GaAs/Si double-junction cell is fabricated by directly bonding a GaAs single-junction cell structure grown on a GaAs (001) substrate to a n-on-p Si sub-cell and separating the GaAs substrate using a sacrificial layer etching. Before the sacrificial layer etching, the III-V/Si junction is annealed at 300 ℃ for 1 hour so as to recrystallize the interface and achieve an enough bonding strength based on the results of hard X-ray photoemission spectroscopy. We obtain a bonding yield of ~80% after the sacrificial layer etching. We confirm that the fabricated double-junction cell normally operates by measuring its current-voltage and spectral-response characteristics.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"12 1","pages":"1018-1020"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88437848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980803
Elizabeth Palmiotti, S. Karki, Benjamin Belfore, Sina Soltanmohammad, G. Rajan, S. Marsillac, A. Rockett
CIGS films deposited at 400°C onto molybdenum-coated soda-lime glass substrates by co-evaporation were annealed in InBr3 vapors or CuBr with Se vapors. The treatments were conducted at 400°C, 450°C, or 500°C for one hour. The InBr3 treatments above 400°C and CuBr with Se treatments at 500°C resulted in increased grain size, improved crystallinity, and a decrease in Cu2Se phase. Annealed samples also exhibited large surface facets. CIGS films deposited at 350°C were also investigated in InBr3 and CuBr with Se vapors at 450°C for one hour. These treatments resulted in increased grain size and less deviations from the as-deposited composition.
{"title":"Post-Deposition Recrystallization of Co-Evaporated CuInxGa(1-x)Se2 Films by Bromide Vapor Treatments","authors":"Elizabeth Palmiotti, S. Karki, Benjamin Belfore, Sina Soltanmohammad, G. Rajan, S. Marsillac, A. Rockett","doi":"10.1109/PVSC40753.2019.8980803","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980803","url":null,"abstract":"CIGS films deposited at 400°C onto molybdenum-coated soda-lime glass substrates by co-evaporation were annealed in InBr3 vapors or CuBr with Se vapors. The treatments were conducted at 400°C, 450°C, or 500°C for one hour. The InBr3 treatments above 400°C and CuBr with Se treatments at 500°C resulted in increased grain size, improved crystallinity, and a decrease in Cu2Se phase. Annealed samples also exhibited large surface facets. CIGS films deposited at 350°C were also investigated in InBr3 and CuBr with Se vapors at 450°C for one hour. These treatments resulted in increased grain size and less deviations from the as-deposited composition.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"45 1","pages":"1863-1866"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82776797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980541
Jiqi Liu, Menghong Wang, A. Curran, Ahmad Maroof Karimi, Wei-Heng Huang, Erdmut Schnabel, M. Köhl, J. Braid, R. French
We report here on performance and mechanistic degradation analysis of 8 years of I-V, Pmp time-series for eight commercial crystalline silicon photovoltaic (PV) modules, located in three distinct climate zones. A data-driven algorithm has been applied to extract I-V features and detect steps in 3.2 million I-V curves. Using the Y ear-on-Y ear determined linear PLR, we found that one brand F (glass-backsheet) module has a much greater (more negative) PLR than another brand G (double glass) in BWh hot desert climate zone. BSh hot semi-arid is shown to be the most aggressive climate zone of the three in which modules were fielded, the third being ET tundra climate. The mechanisms causing most significant power loss for modules in BWh, BSh and ET climate zones are current mismatch (shading), cell shunting, and series resistance, respectively based on Analytic Suns-Voc analysis derived from outdoor I-V curves. Using steps observed in the I-V curves of the systems we are also able to identify and characterize the shading of specific modules.
{"title":"Real-world PV Module Degradation across Climate Zones Determined from Suns-Voc, Loss Factors and I-V Steps Analysis of Eight Years of I-V, Pmp Time-series Datastreams","authors":"Jiqi Liu, Menghong Wang, A. Curran, Ahmad Maroof Karimi, Wei-Heng Huang, Erdmut Schnabel, M. Köhl, J. Braid, R. French","doi":"10.1109/PVSC40753.2019.8980541","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980541","url":null,"abstract":"We report here on performance and mechanistic degradation analysis of 8 years of I-V, Pmp time-series for eight commercial crystalline silicon photovoltaic (PV) modules, located in three distinct climate zones. A data-driven algorithm has been applied to extract I-V features and detect steps in 3.2 million I-V curves. Using the Y ear-on-Y ear determined linear PLR, we found that one brand F (glass-backsheet) module has a much greater (more negative) PLR than another brand G (double glass) in BWh hot desert climate zone. BSh hot semi-arid is shown to be the most aggressive climate zone of the three in which modules were fielded, the third being ET tundra climate. The mechanisms causing most significant power loss for modules in BWh, BSh and ET climate zones are current mismatch (shading), cell shunting, and series resistance, respectively based on Analytic Suns-Voc analysis derived from outdoor I-V curves. Using steps observed in the I-V curves of the systems we are also able to identify and characterize the shading of specific modules.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"11 1","pages":"0680-0686"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86604217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980523
M. Abbott, G. Xing, G. Scardera, D. Payne, K. McIntosh, Ben A. Sudbury, J. Meydbray, T. Fung, Muhammad Umair Khan, Yu Zhang, S. Zou, Xusheng Wang
The ultimate value of any photovoltaic technology is the amount of energy it delivers once installed in the field. Gathering this data experimentally can take many years and requires great cost with limited scope to vary the input parameters. Simulations based on detailed lab measurements provide a more cost-effective option to predict the energy yield of a PV technology rapidly. This paper demonstrates the application of highly detailed ray tracing and SPICE modelling to determine the annual energy yield. It compares the simulated performance of different texturing technologies and predicts the losses at a cell, module and system level. Specifically, it studies upright random pyramids, isotexture and two types of MCCE black silicon applied to a Cz bifacial PERC cell. The difference between isotexture and random pyramids was close to 5% at the cell level, however this significantly reduced to less than 2% at a system level indicating that this analysis is critical to properly assess the ultimate value of a technology.
{"title":"Annual energy yield analysis of solar cell technology","authors":"M. Abbott, G. Xing, G. Scardera, D. Payne, K. McIntosh, Ben A. Sudbury, J. Meydbray, T. Fung, Muhammad Umair Khan, Yu Zhang, S. Zou, Xusheng Wang","doi":"10.1109/PVSC40753.2019.8980523","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980523","url":null,"abstract":"The ultimate value of any photovoltaic technology is the amount of energy it delivers once installed in the field. Gathering this data experimentally can take many years and requires great cost with limited scope to vary the input parameters. Simulations based on detailed lab measurements provide a more cost-effective option to predict the energy yield of a PV technology rapidly. This paper demonstrates the application of highly detailed ray tracing and SPICE modelling to determine the annual energy yield. It compares the simulated performance of different texturing technologies and predicts the losses at a cell, module and system level. Specifically, it studies upright random pyramids, isotexture and two types of MCCE black silicon applied to a Cz bifacial PERC cell. The difference between isotexture and random pyramids was close to 5% at the cell level, however this significantly reduced to less than 2% at a system level indicating that this analysis is critical to properly assess the ultimate value of a technology.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"39 1","pages":"3046-3050"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90204154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980811
M. Sengupta, A. Habte, J. Freeman
A typical meteorological year (TMY) data set essentially represents an hourly compilation of median months constructed using multi-year datasets. Although TMY data sets are generated from irradiance data in the horizontal plane, they are used in photovoltaic (PV) modeling for systems inclined to various angles. This paper demonstrates that a POA TMY (plane of array TMY) generated by selecting median months from a multi-year POA irradiance timeseries dataset produces significantly different results than a POA TMY generated by transposing a TMY dataset constructed from horizontal data. In some months the differences can be more than 3%. These results point to the need for generating TMY’s using POA irradiance timeseries representing the orientation at which PV panels will be deployed.
{"title":"The Case for Custom TMY’s: Examples Using the NSRDB","authors":"M. Sengupta, A. Habte, J. Freeman","doi":"10.1109/PVSC40753.2019.8980811","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980811","url":null,"abstract":"A typical meteorological year (TMY) data set essentially represents an hourly compilation of median months constructed using multi-year datasets. Although TMY data sets are generated from irradiance data in the horizontal plane, they are used in photovoltaic (PV) modeling for systems inclined to various angles. This paper demonstrates that a POA TMY (plane of array TMY) generated by selecting median months from a multi-year POA irradiance timeseries dataset produces significantly different results than a POA TMY generated by transposing a TMY dataset constructed from horizontal data. In some months the differences can be more than 3%. These results point to the need for generating TMY’s using POA irradiance timeseries representing the orientation at which PV panels will be deployed.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"78 1","pages":"2287-2292"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88809515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980502
Hojin Lee, Kihwan Kim, Yuseong Jang, Seong-wook Nam, B. Shin
Heavy alkali (such as Cs, Rb) post-deposition treatment is an indispensable process step to achieve high performing CIGS solar cells. However, there is not enough understanding of the mechanisms leading to the performance improvement by heavy alkali. Here, we report a systematic study on the effects of elemental Cs on chemical and optoelectronic properties CIGS thin films and the final solar cells. We found that main beneficial role of Cs is passivation of deep-level defects and thereby enhancing p-type conduction of the CIGS.
{"title":"Effects of CsF Post-deposition Treatment on Cu(In, Ga)Se2 Thin Films and Solar Cells","authors":"Hojin Lee, Kihwan Kim, Yuseong Jang, Seong-wook Nam, B. Shin","doi":"10.1109/PVSC40753.2019.8980502","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980502","url":null,"abstract":"Heavy alkali (such as Cs, Rb) post-deposition treatment is an indispensable process step to achieve high performing CIGS solar cells. However, there is not enough understanding of the mechanisms leading to the performance improvement by heavy alkali. Here, we report a systematic study on the effects of elemental Cs on chemical and optoelectronic properties CIGS thin films and the final solar cells. We found that main beneficial role of Cs is passivation of deep-level defects and thereby enhancing p-type conduction of the CIGS.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"61 6 1","pages":"0622-0625"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83250127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980795
M. Salim, R. Nekovei
This paper evaluated the oscillator strength and the band gap for specific organic photovoltaic cells (OPV) materials by using Time-Dependent Density Functional Theory (TD-DFT). The oscillator strength values are used to find absorption spectrum of those materials in term of the molar excitation coefficient, dielectric constant and the refractive indices for those materials. The band gap value is used to find the donor-acceptor materials combination that can give the highest open circuit voltage. The donor materials covered in this paper are P3HT, Octithiophene, Sexithiophene, Quaterthiophene, and Pentacene. Also, the study covers the following acceptor materials: C60, C70, PCBM, and Bis- PCBM
{"title":"Electronic Properties and Molar Excitation Coefficient for Organic Solar Cells Materials by using TD-DFT Method","authors":"M. Salim, R. Nekovei","doi":"10.1109/PVSC40753.2019.8980795","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980795","url":null,"abstract":"This paper evaluated the oscillator strength and the band gap for specific organic photovoltaic cells (OPV) materials by using Time-Dependent Density Functional Theory (TD-DFT). The oscillator strength values are used to find absorption spectrum of those materials in term of the molar excitation coefficient, dielectric constant and the refractive indices for those materials. The band gap value is used to find the donor-acceptor materials combination that can give the highest open circuit voltage. The donor materials covered in this paper are P3HT, Octithiophene, Sexithiophene, Quaterthiophene, and Pentacene. Also, the study covers the following acceptor materials: C60, C70, PCBM, and Bis- PCBM","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"55 43 1","pages":"0429-0433"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80718017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8981199
K. Araki, Kan‐Hua Lee, T. Masuda, Yoshitaka Hayakawa, N. Yamada, Y. Ota, M. Yamaguchi
Solar panels used for EV charging stations and car-roof PV are often partially shaded and lead to substantial energy loss. It is known that this mismatching loss can be reduced by increasing the number of parallel strings. First, a probability model was developed using a one-year solar irradiance monitoring around the car body in 5 directions. The developed model successfully matched to the measured solar resource in each direction and succeeded to quantify the probability of the partial shading on the car. Another related issue of the inherent mismatching loss of the car-roof PV is non-uniform illumination caused by the curved shape of the panel. This can also be modeled by ray-tracing simulation. Then, we calculated the PV output affected by mismatching due to various sunlight patterns and partial shade patterns by Monte Carlo method. It was found that the average efficiency asymptotically approached 1 - 1 / N (N is the number of strings). We also examined the relationship between partial shade quantity and power generation loss in a 30 kW solar system array and verified the above model.
用于电动汽车充电站和车顶光伏的太阳能电池板往往部分遮阳，导致大量的能量损失。众所周知，这种不匹配损失可以通过增加并行字符串的数量来减少。首先，利用为期一年的车身周围5个方向的太阳辐照度监测，建立了概率模型。所建立的模型成功地匹配了每个方向上实测的太阳能资源，并成功地量化了汽车部分遮阳的概率。车顶光伏固有的不匹配损失的另一个相关问题是由于面板的弯曲形状引起的不均匀照明。这也可以通过光线追踪模拟来建模。在此基础上，利用蒙特卡罗方法计算了不同光照模式和部分遮荫模式对光伏输出的影响。发现平均效率渐近于1 - 1 / N (N为串数)。我们还研究了30 kW太阳能系统阵列的部分遮荫量与发电损失之间的关系，并验证了上述模型。
{"title":"Rough and Straightforward Estimation of the Mismatching Loss by Partial Shading of the PV Modules Installed on an Urban Area or Car-Roof","authors":"K. Araki, Kan‐Hua Lee, T. Masuda, Yoshitaka Hayakawa, N. Yamada, Y. Ota, M. Yamaguchi","doi":"10.1109/PVSC40753.2019.8981199","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8981199","url":null,"abstract":"Solar panels used for EV charging stations and car-roof PV are often partially shaded and lead to substantial energy loss. It is known that this mismatching loss can be reduced by increasing the number of parallel strings. First, a probability model was developed using a one-year solar irradiance monitoring around the car body in 5 directions. The developed model successfully matched to the measured solar resource in each direction and succeeded to quantify the probability of the partial shading on the car. Another related issue of the inherent mismatching loss of the car-roof PV is non-uniform illumination caused by the curved shape of the panel. This can also be modeled by ray-tracing simulation. Then, we calculated the PV output affected by mismatching due to various sunlight patterns and partial shade patterns by Monte Carlo method. It was found that the average efficiency asymptotically approached 1 - 1 / N (N is the number of strings). We also examined the relationship between partial shade quantity and power generation loss in a 30 kW solar system array and verified the above model.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"33 1","pages":"1218-1225"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83702585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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