Pub Date : 2024-09-04DOI: 10.1007/s40042-024-01171-y
Jikhyeon Ham, Sehun Kim, Seok-Kyun Son
Surface acoustic waves (SAWs) have been utilized as a platform for single-electron transistors. When superposed with the split-gate potential, propagating SAWs create moving potential wells. We demonstrate the total potential landscape using the Laplace equation and apply the one-dimensional time-independent Schrödinger equation to determine the conditions necessary for single-electron transport. Our findings reveal that the ratio between the SAW amplitude and the split-gate voltage varies with the SAW wavelength and the absolute value of the gate voltage. We propose essential conditions for single-electron transport based on the ratios derived from our calculations, which can be applied to other material systems.
{"title":"A simulation for surface acoustic waves driven electron transport in perspective of electrical potential","authors":"Jikhyeon Ham, Sehun Kim, Seok-Kyun Son","doi":"10.1007/s40042-024-01171-y","DOIUrl":"10.1007/s40042-024-01171-y","url":null,"abstract":"<div><p>Surface acoustic waves (SAWs) have been utilized as a platform for single-electron transistors. When superposed with the split-gate potential, propagating SAWs create moving potential wells. We demonstrate the total potential landscape using the Laplace equation and apply the one-dimensional time-independent Schrödinger equation to determine the conditions necessary for single-electron transport. Our findings reveal that the ratio between the SAW amplitude and the split-gate voltage varies with the SAW wavelength and the absolute value of the gate voltage. We propose essential conditions for single-electron transport based on the ratios derived from our calculations, which can be applied to other material systems.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 9","pages":"746 - 750"},"PeriodicalIF":0.8,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1007/s40042-024-01165-w
Jyyoun Han, Gyuseock Ko, Do-Hoon Kim, Mubin Park, Seok-Kyun Son
Raman spectroscopy is a powerful tool to investigate the properties of materials. In particular, the ability to analyze the crystallinity, the number of layers, defects, and electronic properties of two-dimensional materials (2DMs). 2DMs make it a valuable analytical tool in numerous fields. Among 2DMs, rhombohedral stacking graphite, which has ABC-stacked layers, has a different band structure that shows peculiar electronic properties compared to Bernal stacking graphite, which has ABA-stacked layers, and exhibits the characteristics of a topological insulator, making it a unique material. Using Raman spectroscopy, Bernal and rhombohedral stacking can be easily distinguished at room temperature. In multi-layer graphene (MLG), the stacking order can be distinguished by various bands generated from Raman scattering. Additionally, changes in the excitation energy of the laser result in shifts in the Raman peaks and changes in the line shape. In this study, 633 nm and 514 nm lasers were utilized to compare the Raman bands of MLG in Bernal and rhombohedral stacking order. The 2D band, which is a second-order overtone of different in-plane vibrations, was fitted with three Lorentzian peaks to investigate how each Lorentzian peak changes according to the stacking order. Subsequently, the D + Dʺ, N, and M bands, which are weak combination bands with double resonant Raman modes, were investigated to see how they change in Bernal and rhombohedral stacking MLG with increasing laser energy. Conclusively, we present an easy method to distinguish Bernal and rhombohedral stacking in MLG at room temperature using Raman spectroscopy.
拉曼光谱是研究材料特性的强大工具。特别是,它能够分析二维材料(2DMs)的结晶度、层数、缺陷和电子特性。二维材料使其成为众多领域的重要分析工具。在二维材料中,由 ABC 层堆叠而成的斜方体堆叠石墨与由 ABA 层堆叠而成的贝纳尔堆叠石墨相比,具有不同的带状结构,显示出奇特的电子特性,表现出拓扑绝缘体的特征,成为一种独特的材料。利用拉曼光谱,可以在室温下轻松区分贝纳尔堆叠和斜方堆叠。在多层石墨烯(MLG)中,可以通过拉曼散射产生的各种波段来区分堆叠顺序。此外,激光激发能量的变化也会导致拉曼峰的移动和线形的变化。本研究利用 633 nm 和 514 nm 激光比较了伯纳尔堆积阶和斜方体堆积阶 MLG 的拉曼带。2D 波段是不同面内振动的二阶泛音,用三个洛伦兹峰进行拟合,以研究每个洛伦兹峰如何随堆积顺序而变化。随后,研究了 D + Dʺ、N 和 M 波段,它们是具有双共振拉曼模式的弱组合波段,以了解它们在伯纳尔和斜方体堆叠 MLG 中随着激光能量的增加而发生的变化。最后,我们提出了一种利用拉曼光谱在室温下区分 MLG 中伯纳尔堆叠和斜方堆叠的简便方法。
{"title":"Visualization of Raman spectroscopy for stacking orders: distinguishing Bernal and rhombohedral graphite","authors":"Jyyoun Han, Gyuseock Ko, Do-Hoon Kim, Mubin Park, Seok-Kyun Son","doi":"10.1007/s40042-024-01165-w","DOIUrl":"10.1007/s40042-024-01165-w","url":null,"abstract":"<div><p>Raman spectroscopy is a powerful tool to investigate the properties of materials. In particular, the ability to analyze the crystallinity, the number of layers, defects, and electronic properties of two-dimensional materials (2DMs). 2DMs make it a valuable analytical tool in numerous fields. Among 2DMs, rhombohedral stacking graphite, which has ABC-stacked layers, has a different band structure that shows peculiar electronic properties compared to Bernal stacking graphite, which has ABA-stacked layers, and exhibits the characteristics of a topological insulator, making it a unique material. Using Raman spectroscopy, Bernal and rhombohedral stacking can be easily distinguished at room temperature. In multi-layer graphene (MLG), the stacking order can be distinguished by various bands generated from Raman scattering. Additionally, changes in the excitation energy of the laser result in shifts in the Raman peaks and changes in the line shape. In this study, 633 nm and 514 nm lasers were utilized to compare the Raman bands of MLG in Bernal and rhombohedral stacking order. The 2D band, which is a second-order overtone of different in-plane vibrations, was fitted with three Lorentzian peaks to investigate how each Lorentzian peak changes according to the stacking order. Subsequently, the D + Dʺ, N, and M bands, which are weak combination bands with double resonant Raman modes, were investigated to see how they change in Bernal and rhombohedral stacking MLG with increasing laser energy. Conclusively, we present an easy method to distinguish Bernal and rhombohedral stacking in MLG at room temperature using Raman spectroscopy.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 9","pages":"721 - 726"},"PeriodicalIF":0.8,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1007/s40042-024-01170-z
Seonwoo Park, Kyoung Hwa Kim, Suhyun Mun, Injun Jeon, Seon Jin Mun, Young-Hun Cho, Jeongbin Heo, Min Yang, Hyung Soo Ahn, Hunsoo Jeon, Jae Hak Lee, Kwanghee Jung, Won Jae Lee, Geon-Hee Lee, Myeong-Cheol Shin, Jong-Min Oh, Weon Ho Shin, Minkyung Kim, Sang-Mo Koo, Ye Hwan Kang
An advanced hydride vapor-phase epitaxy (HVPE) method was used to improve the sublimation sandwich method for the formation of Si layers on SiC substrates. In this study, a graphite boat structure with a vertical source and growth zones was used, and the sublimation sandwich method was improved by directly attaching two substrates (without any spacing between them) differently from that of the existing sublimation sandwich method. After the deposition of the amorphous Si layer (using sputtering) on an SiC substrate, the recrystalline Si layer was formed at a temperature of 1250 °C using a SiCln source. Consequently, an Si layer with characteristics different from those of the sputtered Si layer was grown. The formed Si layer was characterized using field-emission scanning electron microscopy, energy-dispersive spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy. Overall, we propose an advanced HVPE sublimation sandwich method for forming Si layers on SiC substrates.
利用先进的氢化物气相外延(HVPE)方法改进了在碳化硅基底上形成硅层的升华三明治法。该研究采用了具有垂直源区和生长区的石墨舟结构,并通过直接连接两个基底(基底之间没有任何间距)改进了升华三明治法,这与现有的升华三明治法不同。在碳化硅衬底上沉积非晶硅层(使用溅射法)后,使用碳化硅源在 1250 ℃ 的温度下形成再结晶硅层。因此,生长出了与溅射硅层特性不同的硅层。我们使用场发射扫描电子显微镜、能量色散光谱、高分辨率 X 射线衍射、X 射线光电子能谱、二次离子质谱和原子力显微镜对形成的硅层进行了表征。总之,我们提出了一种在碳化硅基底上形成硅层的先进 HVPE 升华夹层法。
{"title":"Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates","authors":"Seonwoo Park, Kyoung Hwa Kim, Suhyun Mun, Injun Jeon, Seon Jin Mun, Young-Hun Cho, Jeongbin Heo, Min Yang, Hyung Soo Ahn, Hunsoo Jeon, Jae Hak Lee, Kwanghee Jung, Won Jae Lee, Geon-Hee Lee, Myeong-Cheol Shin, Jong-Min Oh, Weon Ho Shin, Minkyung Kim, Sang-Mo Koo, Ye Hwan Kang","doi":"10.1007/s40042-024-01170-z","DOIUrl":"10.1007/s40042-024-01170-z","url":null,"abstract":"<div><p>An advanced hydride vapor-phase epitaxy (HVPE) method was used to improve the sublimation sandwich method for the formation of Si layers on SiC substrates. In this study, a graphite boat structure with a vertical source and growth zones was used, and the sublimation sandwich method was improved by directly attaching two substrates (without any spacing between them) differently from that of the existing sublimation sandwich method. After the deposition of the amorphous Si layer (using sputtering) on an SiC substrate, the recrystalline Si layer was formed at a temperature of 1250 °C using a SiCl<sub>n</sub> source. Consequently, an Si layer with characteristics different from those of the sputtered Si layer was grown. The formed Si layer was characterized using field-emission scanning electron microscopy, energy-dispersive spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy. Overall, we propose an advanced HVPE sublimation sandwich method for forming Si layers on SiC substrates.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 10","pages":"810 - 824"},"PeriodicalIF":0.8,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1007/s40042-024-01175-8
Youquan Liu, Xianwu Jing, Bojian Zhang, Fan Jiang, Keyu Pan
To prevent CaCO3 scaling in oil and gas wells, scale inhibition are commonly used. This study utilized the molecular dynamics method to simulate the crystallization of a high concentration CaCO3 solution, with particular attention given to the influence of the scale inhibitor sodium tripolyphosphate (Na5P3O10). Examination of the distribution of CO32− surrounding Ca2+ indicated that P3O105− effectively hinders the interaction between CO32− and Ca2+, leading to a decrease in the root mean square displacement and diffusion coefficient of ions. Based on the analysis of intermolecular interaction energies, it is evident that the binding energy between Ca2+ and CO32− is estimated at around 550 kcal/mol, whereas the binding energy between Ca2+ and P3O105− is approximately 1000 kcal/mol. These data support the conclusion that P3O105− exhibits a higher affinity for Ca2+ binding, thereby impeding the formation of CaCO3.
{"title":"Preventing the formation of CaCO3 scales: molecular dynamic simulation study on the role of sodium triphosphate as scale inhibition","authors":"Youquan Liu, Xianwu Jing, Bojian Zhang, Fan Jiang, Keyu Pan","doi":"10.1007/s40042-024-01175-8","DOIUrl":"10.1007/s40042-024-01175-8","url":null,"abstract":"<div><p>To prevent CaCO<sub>3</sub> scaling in oil and gas wells, scale inhibition are commonly used. This study utilized the molecular dynamics method to simulate the crystallization of a high concentration CaCO<sub>3</sub> solution, with particular attention given to the influence of the scale inhibitor sodium tripolyphosphate (Na<sub>5</sub>P<sub>3</sub>O<sub>10</sub>). Examination of the distribution of CO<sub>3</sub><sup>2−</sup> surrounding Ca<sup>2+</sup> indicated that P<sub>3</sub>O<sub>10</sub><sup>5−</sup> effectively hinders the interaction between CO<sub>3</sub><sup>2−</sup> and Ca<sup>2+</sup>, leading to a decrease in the root mean square displacement and diffusion coefficient of ions. Based on the analysis of intermolecular interaction energies, it is evident that the binding energy between Ca<sup>2+</sup> and CO<sub>3</sub><sup>2−</sup> is estimated at around 550 kcal/mol, whereas the binding energy between Ca<sup>2+</sup> and P<sub>3</sub>O<sub>10</sub><sup>5−</sup> is approximately 1000 kcal/mol. These data support the conclusion that P<sub>3</sub>O<sub>10</sub><sup>5−</sup> exhibits a higher affinity for Ca<sup>2+</sup> binding, thereby impeding the formation of CaCO<sub>3</sub>.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 7","pages":"566 - 571"},"PeriodicalIF":0.8,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A thorough performance analysis of sub-10 nm gate-length Tri-gate Fin-FETs with gates having single material (SMG) and triple material (TMG) has been conducted through technology computer-aided design (TCAD) simulations for low-power applications. The gate of the TMG device is formed of three metals with distinct work functions. To decrease the drain-induced barrier lowering (DIBL) and increase transconductance, the gate work function near the source is higher than near the drain. The DC and analog/RF are obtained, analyzed, and compared between SMG and TMG devices. It is engrossing that, the device’s OFF current (IOFF) is drastically reduced and the ON current (ION) is improved in the TMG structure leading to a better switching ratio. Also, TMG Tri-gate FinFET device structures provide an excellent peak transconductance of 5.1756 µA/V at VGS = 0.16 V and VDS = 0.1 V, output conductance of 7.45 µA/V at VGS = 1 V, a subthreshold slope of 120 mV/decade at VDS = 0.1 V, an ION/IOFF ratio of 557.12 at VDS = 0.1 V, and DIBL of 33 mV/V. Whereas the SMG Tri-gate FinFET has a peak transconductance of 4.28 µA/V at VGS = 0.4 V and VDS = 0.1 V, output conductance of 5.88 µA/V at VGS = 1 V, a subthreshold slope of 300 mV/decade at VDS = 0.1 V, an ION/IOFF ratio of 21.29 at VDS = 0.1 V, and DIBL of 55 mV/V.
通过针对低功耗应用的技术计算机辅助设计(TCAD)仿真,对具有单材料(SMG)和三材料(TMG)栅极的 10 nm 以下栅极长度三栅极鳍式场效应晶体管进行了全面的性能分析。TMG 器件的栅极由三种具有不同功函数的金属构成。为了降低漏极诱导势垒降低(DIBL)并提高跨导,靠近源极的栅极功函数高于靠近漏极的栅极功函数。我们获得了直流和模拟/射频数据,并对 SMG 和 TMG 器件进行了分析和比较。令人信服的是,在 TMG 结构中,器件的关断电流(IOFF)大幅降低,导通电流(ION)得到改善,从而实现了更好的开关比。此外,TMG 三栅极 FinFET 器件结构在 VGS = 0.16 V 和 VDS = 0.1 V 时的峰值跨导为 5.1756 µA/V,在 VGS = 1 V 时的输出电导为 7.45 µA/V,在 VDS = 0.1 V 时的次阈值斜率为 120 mV/decade,在 VDS = 0.1 V 时的 ION/IOFF 比为 557.12,DIBL 为 33 mV/V。而 SMG 三栅极 FinFET 在 VGS = 0.4 V 和 VDS = 0.1 V 时的峰值跨导为 4.28 µA/V,在 VGS = 1 V 时的输出电导为 5.88 µA/V,在 VDS = 0.1 V 时的次阈值斜率为 300 mV/decade,在 VDS = 0.1 V 时的 ION/IOFF 比为 21.29,DIBL 为 55 mV/V。
{"title":"Comparative analysis of single and triple material 10 nm Tri-gate FinFET","authors":"Shankhamitra Sunani, Satya Sopan Mahato, Kanjalochan Jena, Raghunandan Swain","doi":"10.1007/s40042-024-01169-6","DOIUrl":"10.1007/s40042-024-01169-6","url":null,"abstract":"<div><p>A thorough performance analysis of sub-10 nm gate-length Tri-gate Fin-FETs with gates having single material (SMG) and triple material (TMG) has been conducted through technology computer-aided design (TCAD) simulations for low-power applications. The gate of the TMG device is formed of three metals with distinct work functions. To decrease the drain-induced barrier lowering (DIBL) and increase transconductance, the gate work function near the source is higher than near the drain. The DC and analog/RF are obtained, analyzed, and compared between SMG and TMG devices. It is engrossing that, the device’s OFF current (I<sub>OFF</sub>) is drastically reduced and the ON current (I<sub>ON</sub>) is improved in the TMG structure leading to a better switching ratio. Also, TMG Tri-gate FinFET device structures provide an excellent peak transconductance of 5.1756 µA/V at <i>V</i><sub>GS</sub> = 0.16 V and <i>V</i><sub>DS</sub> = 0.1 V, output conductance of 7.45 µA/V at <i>V</i><sub>GS</sub> = 1 V, a subthreshold slope of 120 mV/decade at <i>V</i><sub>DS</sub> = 0.1 V, an I<sub>ON</sub>/I<sub>OFF</sub> ratio of 557.12 at <i>V</i><sub>DS</sub> = 0.1 V, and DIBL of 33 mV/V. Whereas the SMG Tri-gate FinFET has a peak transconductance of 4.28 µA/V at <i>V</i><sub>GS</sub> = 0.4 V and <i>V</i><sub>DS</sub> = 0.1 V, output conductance of 5.88 µA/V at <i>V</i><sub>GS</sub> = 1 V, a subthreshold slope of 300 mV/decade at <i>V</i><sub>DS</sub> = 0.1 V, an I<sub>ON</sub>/I<sub>OFF</sub> ratio of 21.29 at V<sub>DS</sub> = 0.1 V, and DIBL of 55 mV/V.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 9","pages":"737 - 745"},"PeriodicalIF":0.8,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1007/s40042-024-01172-x
Xianwu Jing, Xiaofeng Lu, Wang Liu, Xin Huang, Ziyi Fu
The distribution of fluorocarbon surfactants potassium perfluoro (2-ethoxyethane) sulfonate (PESK) in 3.4% NaCl solution was studied using molecular dynamics (MD) simulation method. During the MD simulation, it was observed that the PES− in the bulk solution spontaneously move to the water/gas interface. According to the change in the number of water molecules within 0.35 nm of PES−, it can be inferred that the solution has basically reached equilibrium when the simulation reaches 40 ns. At this moment, the vast majority PES− are distributed at the air/water surface, the fluorocarbon chain is facing toward the gas phase, while the sulfonic acid radical faces toward the water, and there are about 12 water molecules within 0.35 nm of each PES−, a very small quantity of PES− still in the bulk solution. Compared with K+, Na+ is more likely bound to PES−, and this is confirmed by RDF and number density distribution analysis. The weak intermolecular interactions were analyzed by the IGMH method, and the interaction energy between PES− and water mainly comes from the h-bonds formed by the oxygen atom in the sulfonic acid group and hydrogen atom in water molecules; there is only van der Waals interaction between fluorine atoms and water molecules.
{"title":"Distribution of potassium perfluoro (2-ethoxyethane) sulfonate in NaCl solution: insights from molecular dynamics simulation","authors":"Xianwu Jing, Xiaofeng Lu, Wang Liu, Xin Huang, Ziyi Fu","doi":"10.1007/s40042-024-01172-x","DOIUrl":"10.1007/s40042-024-01172-x","url":null,"abstract":"<div><p>The distribution of fluorocarbon surfactants potassium perfluoro (2-ethoxyethane) sulfonate (PESK) in 3.4% NaCl solution was studied using molecular dynamics (MD) simulation method. During the MD simulation, it was observed that the PES<sup>−</sup> in the bulk solution spontaneously move to the water/gas interface. According to the change in the number of water molecules within 0.35 nm of PES<sup>−</sup>, it can be inferred that the solution has basically reached equilibrium when the simulation reaches 40 ns. At this moment, the vast majority PES<sup>−</sup> are distributed at the air/water surface, the fluorocarbon chain is facing toward the gas phase, while the sulfonic acid radical faces toward the water, and there are about 12 water molecules within 0.35 nm of each PES<sup>−</sup>, a very small quantity of PES<sup>−</sup> still in the bulk solution. Compared with K<sup>+</sup>, Na<sup>+</sup> is more likely bound to PES<sup>−</sup>, and this is confirmed by RDF and number density distribution analysis. The weak intermolecular interactions were analyzed by the IGMH method, and the interaction energy between PES<sup>−</sup> and water mainly comes from the h-bonds formed by the oxygen atom in the sulfonic acid group and hydrogen atom in water molecules; there is only van der Waals interaction between fluorine atoms and water molecules.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 7","pages":"608 - 614"},"PeriodicalIF":0.8,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1007/s40042-024-01166-9
Mincheol Ko, Chanil Jeon, Sung Hwan Ahn, Youngyih Han, Kwangzoo Chung, Sungkoo Cho, Kwanghyun Jo, Eun Hyuk Shin, Sehyoung Lee, WooJin Lee, Yoonjin Oh, Juhye Kim, Seokyoon Kang, Hee Chul Park, Kisung Lee
Scanning proton therapy offers advantages over conventional photon therapy due to the Bragg-peak effect and superior dosimetric precision. Compared with passive methods, however, scanning proton therapy tends to exhibit a wider penumbra in the low-energy range. To address this issue, the present study evaluated the effectiveness of a patient-specific aperture collimator (AC) and multi-leaf collimator (MLC) for the line proton scanning treatment system at the Samsung Proton Therapy Center in Korea. The penumbra reduction efficiency of the collimation devices and the neutron dose was assessed through Monte Carlo (MC) simulations. The clinical effectiveness was evaluated dosimetrically and by assessing quality assurance. Through the MC calculation, the AC displayed the highest efficiency in penumbra reduction (43.75% of no collimator’s penumbra width at a depth of 10 cm with a 150 MeV proton beam), while the MLC also presented a comparable effect (56.25%). The neutron dose was compared at varying distances from the field edge. The neutron dose was higher in the order of AC(+ 11.96%p), MLC(+ 2.61%p), and no collimator at the 10 cm distance from field edge. For the dosimetric study, treatment plans for the nasal cavity, prostate, liver, lungs, and breasts were generated by the treatment planning system using the MC algorithm. Three treatment plans were developed for each of these five sites: line scanning without any collimation, line scanning with patient-specific ACs, and line scanning with MLCs. These plans were then compared dosimetrically, and gamma pass-rates were measured at various depths. These multifaceted comparisons showed that the use of an AC optimized the OAR sparing effect, with an MLC having similar effects, while maintaining the same target coverage and producing less neutron dose. All measurement results demonstrated a gamma pass-rate (2%, 2 mm) of over 90%, indicating the feasibility of implementing these techniques in actual clinical practice.
与传统光子疗法相比,扫描质子疗法具有布拉格峰效应和更高的剂量测定精度等优势。然而,与被动方法相比,扫描质子疗法在低能量范围内往往表现出更宽的半影。为了解决这个问题,本研究评估了韩国三星质子治疗中心的质子扫描治疗系统中患者专用孔径准直器(AC)和多叶准直器(MLC)的有效性。通过蒙特卡洛(MC)模拟评估了准直装置的半影减少效率和中子剂量。临床效果通过剂量学和质量保证评估进行了评价。通过 MC 计算,AC 在减少半影方面的效率最高(在 150 MeV 质子束作用下,10 厘米深度处的半影宽度是无准直器半影宽度的 43.75%),而 MLC 的效果也相当(56.25%)。比较了距离场边缘不同距离的中子剂量。在距离磁场边缘 10 厘米处,中子剂量依次为 AC(+ 11.96%p)、MLC(+ 2.61%p)和无准直器。在剂量测定研究中,治疗计划系统使用 MC 算法生成了鼻腔、前列腺、肝脏、肺部和乳房的治疗计划。为这五个部位分别制定了三种治疗方案:无准直的线扫描、带有患者特定 AC 的线扫描和带有 MLC 的线扫描。然后对这些方案进行剂量学比较,并测量了不同深度的伽马通过率。这些多方面的比较结果表明,使用 AC 可以优化 OAR 的疏通效果,而使用 MLC 也有类似的效果,同时还能保持相同的目标覆盖范围,并产生较少的中子剂量。所有测量结果均显示伽马通过率(2%,2 毫米)超过 90%,这表明在实际临床实践中采用这些技术是可行的。
{"title":"Utility of a patient-specific aperture collimator and multi-leaf collimator in line scanning proton therapy","authors":"Mincheol Ko, Chanil Jeon, Sung Hwan Ahn, Youngyih Han, Kwangzoo Chung, Sungkoo Cho, Kwanghyun Jo, Eun Hyuk Shin, Sehyoung Lee, WooJin Lee, Yoonjin Oh, Juhye Kim, Seokyoon Kang, Hee Chul Park, Kisung Lee","doi":"10.1007/s40042-024-01166-9","DOIUrl":"10.1007/s40042-024-01166-9","url":null,"abstract":"<div><p>Scanning proton therapy offers advantages over conventional photon therapy due to the Bragg-peak effect and superior dosimetric precision. Compared with passive methods, however, scanning proton therapy tends to exhibit a wider penumbra in the low-energy range. To address this issue, the present study evaluated the effectiveness of a patient-specific aperture collimator (AC) and multi-leaf collimator (MLC) for the line proton scanning treatment system at the Samsung Proton Therapy Center in Korea. The penumbra reduction efficiency of the collimation devices and the neutron dose was assessed through Monte Carlo (MC) simulations. The clinical effectiveness was evaluated dosimetrically and by assessing quality assurance. Through the MC calculation, the AC displayed the highest efficiency in penumbra reduction (43.75% of no collimator’s penumbra width at a depth of 10 cm with a 150 MeV proton beam), while the MLC also presented a comparable effect (56.25%). The neutron dose was compared at varying distances from the field edge. The neutron dose was higher in the order of AC(+ 11.96%p), MLC(+ 2.61%p), and no collimator at the 10 cm distance from field edge. For the dosimetric study, treatment plans for the nasal cavity, prostate, liver, lungs, and breasts were generated by the treatment planning system using the MC algorithm. Three treatment plans were developed for each of these five sites: line scanning without any collimation, line scanning with patient-specific ACs, and line scanning with MLCs. These plans were then compared dosimetrically, and gamma pass-rates were measured at various depths. These multifaceted comparisons showed that the use of an AC optimized the OAR sparing effect, with an MLC having similar effects, while maintaining the same target coverage and producing less neutron dose. All measurement results demonstrated a gamma pass-rate (2%, 2 mm) of over 90%, indicating the feasibility of implementing these techniques in actual clinical practice.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 9","pages":"751 - 762"},"PeriodicalIF":0.8,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-22DOI: 10.1007/s40042-024-01157-w
Ju Won Kim, Dong Hyun Seo, Hagyoul Bae, Joo Hyung Park, TaeWan Kim
Group-III monochalcogenides, particularly gallium sulfide (GaS), have garnered attention for visible–UV range optoelectronic applications owing to their wide bandgap, which can reach approximately 3 eV. The interplay between group-III monochalcogenides and metal electrodes needs to be understood to optimize the device performance. In this study, we explored the Schottky barrier height between GaS deposited through atomic layer deposition and commonly employed Ti/Au electrodes through low-temperature current–voltage measurements. The GaS photodetector exhibited p-type transport characteristics with a mobility of 7.71 × 10–1 cm2 V−1 s−1 and a photoresponsivity of 547 A W−1.
III 族单质,尤其是硫化镓(GaS),因其宽带隙(可达约 3 eV)而在可见紫外范围的光电应用中备受关注。为了优化器件性能,我们需要了解 III 族单钙化物与金属电极之间的相互作用。在这项研究中,我们通过低温电流-电压测量,探讨了通过原子层沉积沉积的 GaS 与常用的 Ti/Au 电极之间的肖特基势垒高度。GaS 光电探测器表现出 p 型传输特性,迁移率为 7.71 × 10-1 cm2 V-1 s-1,光致发光率为 547 A W-1。
{"title":"Characteristics of metal contact to GaS films and photodetector applications","authors":"Ju Won Kim, Dong Hyun Seo, Hagyoul Bae, Joo Hyung Park, TaeWan Kim","doi":"10.1007/s40042-024-01157-w","DOIUrl":"10.1007/s40042-024-01157-w","url":null,"abstract":"<div><p>Group-III monochalcogenides, particularly gallium sulfide (GaS), have garnered attention for visible–UV range optoelectronic applications owing to their wide bandgap, which can reach approximately 3 eV. The interplay between group-III monochalcogenides and metal electrodes needs to be understood to optimize the device performance. In this study, we explored the Schottky barrier height between GaS deposited through atomic layer deposition and commonly employed Ti/Au electrodes through low-temperature current–voltage measurements. The GaS photodetector exhibited p-type transport characteristics with a mobility of 7.71 × 10<sup>–1</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and a photoresponsivity of 547 A W<sup>−1</sup>.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 7","pages":"572 - 577"},"PeriodicalIF":0.8,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-22DOI: 10.1007/s40042-024-01163-y
Kangmo Yeo, Jae Ryang Hahn, Sukmin Jeong
While spontaneous spin polarization is a desirable property in semiconductors, it has not been observed in pristine materials. A theoretical study suggested that the Au/Si(553) surface exhibits anti-ferromagnetic properties spontaneously. The Si(5 5 12) surface shares a similar atomic structure with the Au/Si(553) surface, particularly the presence of a stable honeycomb chain. The Si(5 5 12) surface exhibits four distinct surface structures: honeycomb chain, dimer, adatom, and tetramer. We find that while the pristine Si(5 5 12) shows no spin polarization, the doped Si(5 5 12) surface leads to spin splitting, primarily concentrated at the dangling bonds of the adatom and honeycomb chain. This spin splitting induces a transformation of the surface into a ferromagnetic state. Although the behaviors are rather different for the electron and hole doping, the surface magnetization roughly strengthens as the number of doped charges increases. These findings suggest that charge doping can be a viable approach to induce spin polarization in Si(5 5 12) surfaces, offering a potential route towards achieving this desired property in semiconductors.
{"title":"Doping-induced spin polarization on the pristine Si surface: a Si(5 5 12)2 × 1 case","authors":"Kangmo Yeo, Jae Ryang Hahn, Sukmin Jeong","doi":"10.1007/s40042-024-01163-y","DOIUrl":"10.1007/s40042-024-01163-y","url":null,"abstract":"<div><p>While spontaneous spin polarization is a desirable property in semiconductors, it has not been observed in pristine materials. A theoretical study suggested that the Au/Si(553) surface exhibits anti-ferromagnetic properties spontaneously. The Si(5 5 12) surface shares a similar atomic structure with the Au/Si(553) surface, particularly the presence of a stable honeycomb chain. The Si(5 5 12) surface exhibits four distinct surface structures: honeycomb chain, dimer, adatom, and tetramer. We find that while the pristine Si(5 5 12) shows no spin polarization, the doped Si(5 5 12) surface leads to spin splitting, primarily concentrated at the dangling bonds of the adatom and honeycomb chain. This spin splitting induces a transformation of the surface into a ferromagnetic state. Although the behaviors are rather different for the electron and hole doping, the surface magnetization roughly strengthens as the number of doped charges increases. These findings suggest that charge doping can be a viable approach to induce spin polarization in Si(5 5 12) surfaces, offering a potential route towards achieving this desired property in semiconductors.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 9","pages":"712 - 720"},"PeriodicalIF":0.8,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-22DOI: 10.1007/s40042-024-01156-x
HyunJi Lim, SangHoon Lim
The motivation of geometry engineering with proton, deuteron, and helium-3 projectiles at relativistic heavy-ion collider (RHIC) is to investigate the relation between initial geometry and final momentum anisotropy, which is thought to be strong evidence of quark–gluon plasma. PHENIX Collaboration shows a hierarchy of elliptic and triangular flow in p/d/(^{3})He+Au collisions that follow a hierarchy of eccentricity described by the Monte Carlo Glauber model, whereas STAR Collaboration shows a different trend in the triangular flow results. For a complete understanding of the results, a detailed microscopic description, such as sub-nucleon geometry and area of energy deposition, becomes more important. A multiphase transport model (AMPT) can qualitatively describe the collective behavior with scatterings at partonic and hadronic stages. We utilize the AMPT to simulate small systems and investigate the relation between initial geometry and final momentum anisotropy with different geometry descriptions.
{"title":"Investigation of the initial geometry description using collectivity in the AMPT model","authors":"HyunJi Lim, SangHoon Lim","doi":"10.1007/s40042-024-01156-x","DOIUrl":"10.1007/s40042-024-01156-x","url":null,"abstract":"<div><p>The motivation of geometry engineering with proton, deuteron, and helium-3 projectiles at relativistic heavy-ion collider (RHIC) is to investigate the relation between initial geometry and final momentum anisotropy, which is thought to be strong evidence of quark–gluon plasma. PHENIX Collaboration shows a hierarchy of elliptic and triangular flow in <i>p</i>/<i>d</i>/<span>(^{3})</span>He+Au collisions that follow a hierarchy of eccentricity described by the Monte Carlo Glauber model, whereas STAR Collaboration shows a different trend in the triangular flow results. For a complete understanding of the results, a detailed microscopic description, such as sub-nucleon geometry and area of energy deposition, becomes more important. A multiphase transport model (AMPT) can qualitatively describe the collective behavior with scatterings at partonic and hadronic stages. We utilize the AMPT to simulate small systems and investigate the relation between initial geometry and final momentum anisotropy with different geometry descriptions.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 6","pages":"457 - 467"},"PeriodicalIF":0.8,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142184471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}