The negatively charged state of nitrogen vacancy centre (NV–) in diamond have been exploited in recent studies of magnetometry and quantum information processing. Nevertheless, the useful signal of NV– for these applications can be deteriorated by the neutrally charged state (NV0) which acts as backgrounds. In recent studies, it has been reported that simultaneous excitation of green (532 nm) laser combined with infrared (1030, 1040, 1064 nm) laser can enhance the emission from NV– while suppressing signal from NV0. Under such laser excitation conditions, however, the underlying mechanism of the photo-induced conversion between two charged states is still not fully understood. In our work, based on multi-photon absorption of IR, we propose a simple model to explain the mutual contribution of green and IR lasers to promote the NV– population. Our model recovers the detailed featured observed in our experiment, and also can reconcile the results in previous literatures.
{"title":"Mechanism of IR assisted charge state conversion of nitrogen vacancy centre in diamond","authors":"Nhu Anh Nguyen, Juil Hwang, Seunghyun Bang, Seonghyeon Kang, Hyunjong Lee, Kwang-Geol Lee, Sangwon Oh","doi":"10.1007/s40042-025-01418-2","DOIUrl":"10.1007/s40042-025-01418-2","url":null,"abstract":"<div><p>The negatively charged state of nitrogen vacancy centre (NV<sup>–</sup>) in diamond have been exploited in recent studies of magnetometry and quantum information processing. Nevertheless, the useful signal of NV<sup>–</sup> for these applications can be deteriorated by the neutrally charged state (NV<sup>0</sup>) which acts as backgrounds. In recent studies, it has been reported that simultaneous excitation of green (532 nm) laser combined with infrared (1030, 1040, 1064 nm) laser can enhance the emission from NV<sup>–</sup> while suppressing signal from NV<sup>0</sup>. Under such laser excitation conditions, however, the underlying mechanism of the photo-induced conversion between two charged states is still not fully understood. In our work, based on multi-photon absorption of IR, we propose a simple model to explain the mutual contribution of green and IR lasers to promote the NV<sup>–</sup> population. Our model recovers the detailed featured observed in our experiment, and also can reconcile the results in previous literatures.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"341 - 349"},"PeriodicalIF":0.9,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-17DOI: 10.1007/s40042-025-01414-6
Vipin Kumar, Pushpendra Kumar, Gyanendra Kumar Maurya, Jin Seog Gwag
Heterostructure materials have gained significant research interest due to their distinct physical properties. Toxic gases severely affect the respiratory system of the human body. We propose an in-plane monolayer heterostructure based on transition metal dichalcogenides (TMD) to investigate the effect of toxic gas adsorption. The toxic gas molecules are adsorbed on top of the chalcogen-atom of the in-plane TMD heterostructure. The electronic structure calculations reflect that the band gap of the proposed host material remains almost unchanged upon the adsorption of gas molecules. The gas adsorption leads to the nearly unaltered valance band and conduction band. This is due to the lack of hybridization between the molecular orbitals of the adsorbate and the host material. The Mulliken population method confirms the charge transfer between the host in-plane TMD heterostructure and the adsorbed gas molecules. Furthermore, it is observed that the adsorption of gas molecules significantly changes the dielectric and optical response of the TMD in-plane heterostructure. Our investigations demonstrate that the proposed material has the potential for toxic gas sensing.
{"title":"Toxic gas adsorption on in-plane monolayer heterostructure of transition metal dichalcogenide: a first-principles study","authors":"Vipin Kumar, Pushpendra Kumar, Gyanendra Kumar Maurya, Jin Seog Gwag","doi":"10.1007/s40042-025-01414-6","DOIUrl":"10.1007/s40042-025-01414-6","url":null,"abstract":"<div><p>Heterostructure materials have gained significant research interest due to their distinct physical properties. Toxic gases severely affect the respiratory system of the human body. We propose an in-plane monolayer heterostructure based on transition metal dichalcogenides (TMD) to investigate the effect of toxic gas adsorption. The toxic gas molecules are adsorbed on top of the chalcogen-atom of the in-plane TMD heterostructure. The electronic structure calculations reflect that the band gap of the proposed host material remains almost unchanged upon the adsorption of gas molecules. The gas adsorption leads to the nearly unaltered valance band and conduction band. This is due to the lack of hybridization between the molecular orbitals of the adsorbate and the host material. The Mulliken population method confirms the charge transfer between the host in-plane TMD heterostructure and the adsorbed gas molecules. Furthermore, it is observed that the adsorption of gas molecules significantly changes the dielectric and optical response of the TMD in-plane heterostructure. Our investigations demonstrate that the proposed material has the potential for toxic gas sensing.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"281 - 291"},"PeriodicalIF":0.9,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-11DOI: 10.1007/s40042-025-01401-x
Seung-Yeun Yoo, Dong-Gil Im, U-Shin Kim, Yosep Kim, Yoon-Ho Kim
Weak value amplification (WVA) is a powerful technique in quantum metrology, enabling the detection of small signals that are typically challenging to measure. However, conventional WVA methods often suffer from low post-selection probabilities, which diminish the practical advantages of amplified signals. In this work, we propose and demonstrate an improved WVA scheme using photon recycling, where non-post-selected photons are reused in additional amplification processes. By implementing this recycling-enhanced method with effectively three photon recycling rounds, we achieve improvement of a factor of 1.66 ± 0.01 in post-selection probability and 1.56 ± 0.01 in amplification of the weak value. Additionally, we simulate the impact of optical path losses on the WVA probability. This allows us to determine the saturation limits of our photon recycling approach. This work provides a pathway toward more efficient WVA, significantly advancing precision measurement capabilities in quantum metrology and related sensing applications.
{"title":"Enhanced weak value amplification via photon recycling","authors":"Seung-Yeun Yoo, Dong-Gil Im, U-Shin Kim, Yosep Kim, Yoon-Ho Kim","doi":"10.1007/s40042-025-01401-x","DOIUrl":"10.1007/s40042-025-01401-x","url":null,"abstract":"<div><p>Weak value amplification (WVA) is a powerful technique in quantum metrology, enabling the detection of small signals that are typically challenging to measure. However, conventional WVA methods often suffer from low post-selection probabilities, which diminish the practical advantages of amplified signals. In this work, we propose and demonstrate an improved WVA scheme using photon recycling, where non-post-selected photons are reused in additional amplification processes. By implementing this recycling-enhanced method with effectively three photon recycling rounds, we achieve improvement of a factor of 1.66 ± 0.01 in post-selection probability and 1.56 ± 0.01 in amplification of the weak value. Additionally, we simulate the impact of optical path losses on the WVA probability. This allows us to determine the saturation limits of our photon recycling approach. This work provides a pathway toward more efficient WVA, significantly advancing precision measurement capabilities in quantum metrology and related sensing applications. </p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"254 - 259"},"PeriodicalIF":0.9,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-11DOI: 10.1007/s40042-025-01412-8
In-Su Han
Calculations of electric field strength in various structures are essential in the design of most electrical and electronic equipment and devices, because electric field tendencies vary greatly with respect to a given voltage, dielectric constants of insulating media, and the geometry of the structure. Electric field simulation is very convenient to calculate and predict electric field tendencies, but it is time-consuming, expensive, and difficult to understand the physical meaning with. To address this problem in a simpler way than time-consuming and costly electric field simulations, we derive analytical equation-based solutions for pre-designing electrical and electronic devices. In this paper, we consider a simple mathematical model based on Laplace equation, particularly with respect to asymmetrically arranged dielectric structures. In these structures, we analyze electric field tendencies using axis rotation and Legendre polynomials associated with each fitted axis, especially in asymmetrically arranged models.
{"title":"Analysis of electric field in asymmetrically arranged dielectric media using simple mathematical methods","authors":"In-Su Han","doi":"10.1007/s40042-025-01412-8","DOIUrl":"10.1007/s40042-025-01412-8","url":null,"abstract":"<div><p>Calculations of electric field strength in various structures are essential in the design of most electrical and electronic equipment and devices, because electric field tendencies vary greatly with respect to a given voltage, dielectric constants of insulating media, and the geometry of the structure. Electric field simulation is very convenient to calculate and predict electric field tendencies, but it is time-consuming, expensive, and difficult to understand the physical meaning with. To address this problem in a simpler way than time-consuming and costly electric field simulations, we derive analytical equation-based solutions for pre-designing electrical and electronic devices. In this paper, we consider a simple mathematical model based on Laplace equation, particularly with respect to asymmetrically arranged dielectric structures. In these structures, we analyze electric field tendencies using axis rotation and Legendre polynomials associated with each fitted axis, especially in asymmetrically arranged models.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"310 - 318"},"PeriodicalIF":0.9,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-11DOI: 10.1007/s40042-025-01413-7
Dung Thi Tran, Minho Kim, Bong hwan Hong, Chawon Park, Seungwoo Park
X-ray irradiators are used to inactivate T-cell function to prevent the risk of transfusion-associated graft-versus-host disease (TA-GVHD). Absorbed dose of 25–50 Gy within 5 min with a dose uniformity ratio (DUR) below 1.5 are recommended for inactivating T cells while sparing other blood components. In this study, different backscatter plate materials were utilized to improve dose uniformity within the entire blood phantom for a single X-ray blood irradiator using Monte Carlo simulation (MCNP6). Based on the simulation results, Be, acrylic, and Al were selected as backscatter plates for their high backscatter ratios. Dose uniformity across the entire blood phantom improved by 29.56%, 21.43%, and 10.44% when using 10 cm Be, 10 cm acrylic, and 4 cm Al as backscatter plates, respectively. Using a backscatter plate improved dose uniformity across the entire blood phantom hence improving blood irradiation efficiency. However, DUR exceeding 1.5 is due to substantial dose difference between the surface and bottom regions of the blood phantom. In future studies, additional filters will be explored to improve DUR and achieve the recommended value.
x射线照射器用于灭活t细胞功能,以防止输血相关移植物抗宿主病(TA-GVHD)的风险。建议在5min内吸收剂量为25 - 50gy,剂量均匀比(DUR)低于1.5,以灭活T细胞,同时保留其他血液成分。在本研究中,采用蒙特卡罗模拟(MCNP6),利用不同的后向散射板材料来改善单个x射线血液辐照器全血模内的剂量均匀性。基于仿真结果,选择Be、丙烯酸和Al等具有高后向散射比的材料作为后向散射板。使用10 cm Be、10 cm丙烯酸和4 cm Al作为后向散射板,整个血模的剂量均匀性分别提高了29.56%、21.43%和10.44%。使用后向散射板改善了整个血模体的剂量均匀性,从而提高了血液辐照效率。然而,DUR超过1.5是由于血幻影的表面和底部区域之间存在巨大的剂量差异。在未来的研究中,将探索额外的滤波器来提高DUR并达到推荐值。
{"title":"Improvement of dose uniformity using a backscatter plate in a single X-ray source for blood irradiator: Monte Carlo simulation approach","authors":"Dung Thi Tran, Minho Kim, Bong hwan Hong, Chawon Park, Seungwoo Park","doi":"10.1007/s40042-025-01413-7","DOIUrl":"10.1007/s40042-025-01413-7","url":null,"abstract":"<div><p>X-ray irradiators are used to inactivate T-cell function to prevent the risk of transfusion-associated graft-versus-host disease (TA-GVHD). Absorbed dose of 25–50 Gy within 5 min with a dose uniformity ratio (DUR) below 1.5 are recommended for inactivating T cells while sparing other blood components. In this study, different backscatter plate materials were utilized to improve dose uniformity within the entire blood phantom for a single X-ray blood irradiator using Monte Carlo simulation (MCNP6). Based on the simulation results, Be, acrylic, and Al were selected as backscatter plates for their high backscatter ratios. Dose uniformity across the entire blood phantom improved by 29.56%, 21.43%, and 10.44% when using 10 cm Be, 10 cm acrylic, and 4 cm Al as backscatter plates, respectively. Using a backscatter plate improved dose uniformity across the entire blood phantom hence improving blood irradiation efficiency. However, DUR exceeding 1.5 is due to substantial dose difference between the surface and bottom regions of the blood phantom. In future studies, additional filters will be explored to improve DUR and achieve the recommended value.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"299 - 309"},"PeriodicalIF":0.9,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-10DOI: 10.1007/s40042-025-01410-w
Yeongtae Choi, Seokyoon Shin, Changwoo Byun, Hee-Soo Kim, Hyeongtag Jeon
As a thin film encapsulation method, atomic layer deposition (ALD) has the potential to provide superior protection for organic light-emitting diodes (OLEDs). However, the application of H2O and O2 plasma in the traditional ALD process has not yet resulted in a successful moisture barrier. The large dipole moment of H2O may result in excess residual hydroxyl groups, and the flux of charged particles from O2 plasma can damage organic materials. Here, we suggest the use of ozone (O3) as an alternative reactant to mitigate these limiting factors. It is a powerful oxidizer and is much more volatile than other oxidizing agents. Thus, O3 is a promising oxygen source to improve moisture barrier properties for OLEDs. This work describes the dependence of O3 concentration on the moisture barrier properties of Al2O3 thin films prepared by ozone-based ALD at 100 °C. Trimethylaluminum and O3 were utilized as aluminum and oxygen precursors, respectively. The O3 concentration varied from 100 to 400 g/m3 in increments of 100 g/m3. An increase in O3 concentration resulted in a significant enhancement in the moisture barrier performance of Al2O3, with values improving from 7.1 × 10⁻4 to 1.9 × 10⁻5 g/m2/day. Further characterization indicated that Al2O3 thin films produced at elevated O3 concentrations exhibited superior physical and chemical properties compared to those generated at lower O3 concentrations.
{"title":"Dependence of ozone concentration on the moisture barrier properties of aluminum oxide using atomic layer deposition","authors":"Yeongtae Choi, Seokyoon Shin, Changwoo Byun, Hee-Soo Kim, Hyeongtag Jeon","doi":"10.1007/s40042-025-01410-w","DOIUrl":"10.1007/s40042-025-01410-w","url":null,"abstract":"<div><p>As a thin film encapsulation method, atomic layer deposition (ALD) has the potential to provide superior protection for organic light-emitting diodes (OLEDs). However, the application of H<sub>2</sub>O and O<sub>2</sub> plasma in the traditional ALD process has not yet resulted in a successful moisture barrier. The large dipole moment of H<sub>2</sub>O may result in excess residual hydroxyl groups, and the flux of charged particles from O<sub>2</sub> plasma can damage organic materials. Here, we suggest the use of ozone (O<sub>3</sub>) as an alternative reactant to mitigate these limiting factors. It is a powerful oxidizer and is much more volatile than other oxidizing agents. Thus, O<sub>3</sub> is a promising oxygen source to improve moisture barrier properties for OLEDs. This work describes the dependence of O<sub>3</sub> concentration on the moisture barrier properties of Al<sub>2</sub>O<sub>3</sub> thin films prepared by ozone-based ALD at 100 °C. Trimethylaluminum and O<sub>3</sub> were utilized as aluminum and oxygen precursors, respectively. The O<sub>3</sub> concentration varied from 100 to 400 g/m<sup>3</sup> in increments of 100 g/m<sup>3</sup>. An increase in O<sub>3</sub> concentration resulted in a significant enhancement in the moisture barrier performance of Al<sub>2</sub>O<sub>3</sub>, with values improving from 7.1 × 10⁻<sup>4</sup> to 1.9 × 10⁻<sup>5</sup> g/m<sup>2</sup>/day. Further characterization indicated that Al<sub>2</sub>O<sub>3</sub> thin films produced at elevated O<sub>3</sub> concentrations exhibited superior physical and chemical properties compared to those generated at lower O<sub>3</sub> concentrations.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"275 - 280"},"PeriodicalIF":0.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-10DOI: 10.1007/s40042-025-01387-6
Jusung Kim, Kyeongyun Park, Dohyeon Kim, Hak Soo Kim, Chankyu Kim, Jong Hwi Jeong, Dongho Shin, Se Byeong Lee, Myeongsoo Kim, Tae Hyun Kim, Young Kyung Lim
Proton minibeam radiation therapy (pMBRT) has emerged as a promising radiation treatment modality, offering enhanced tissue-sparing effects compared to conventional proton therapy. For clinical application, we developed a pMBRT system with the largest field size (30 × 40 cm2) in the world, and conducted a comprehensive dosimetric evaluation of its characteristics. Our system consists of a large-area multi-slit collimator (MSC), a depth-dose modulator, a neutron absorber, a range shifter, and a custom snout compatible with the conventional proton therapy machines. We investigated two energy conditions (170 MeV with and 200 MeV without a range shifter), varying air gap and scatterer configurations to simulate clinical treatments. Lateral dose profiles showed peak and valley dose standard deviations below 5.5% of their respective means. Analysis of scatterer characteristics using the peak-to-valley dose ratio (PVDR) showed that as scatterer thickness increased, the PVDR approached 1 just beneath the phantom surface. Conversely, under low-scattering conditions, the PVDR at the phantom surface exceeded 15. For shallow tumors, a high PVDR at the surface is desired, with a rapid decrease near the tumor's depth. The depth-dose modulation effect was analyzed using air gaps and lead scatterers to amplify multiple Coulomb scattering. Monte Carlo simulations confirmed a significant reduction in secondary neutrons due to the neutron absorber. In conclusion, our system generates minibeams with a uniform dose envelope. Excellent depth-dose modulation using scatterers facilitates simultaneous skin protection and shallow-depth tumor treatment. By mitigating secondary neutrons, the system can also reduce radiation toxicity, enhancing its clinical viability.
{"title":"Dosimetric evaluation of large-area proton minibeam radiation therapy system for clinical applications","authors":"Jusung Kim, Kyeongyun Park, Dohyeon Kim, Hak Soo Kim, Chankyu Kim, Jong Hwi Jeong, Dongho Shin, Se Byeong Lee, Myeongsoo Kim, Tae Hyun Kim, Young Kyung Lim","doi":"10.1007/s40042-025-01387-6","DOIUrl":"10.1007/s40042-025-01387-6","url":null,"abstract":"<div><p>Proton minibeam radiation therapy (pMBRT) has emerged as a promising radiation treatment modality, offering enhanced tissue-sparing effects compared to conventional proton therapy. For clinical application, we developed a pMBRT system with the largest field size (30 × 40 cm2) in the world, and conducted a comprehensive dosimetric evaluation of its characteristics. Our system consists of a large-area multi-slit collimator (MSC), a depth-dose modulator, a neutron absorber, a range shifter, and a custom snout compatible with the conventional proton therapy machines. We investigated two energy conditions (170 MeV with and 200 MeV without a range shifter), varying air gap and scatterer configurations to simulate clinical treatments. Lateral dose profiles showed peak and valley dose standard deviations below 5.5% of their respective means. Analysis of scatterer characteristics using the peak-to-valley dose ratio (PVDR) showed that as scatterer thickness increased, the PVDR approached 1 just beneath the phantom surface. Conversely, under low-scattering conditions, the PVDR at the phantom surface exceeded 15. For shallow tumors, a high PVDR at the surface is desired, with a rapid decrease near the tumor's depth. The depth-dose modulation effect was analyzed using air gaps and lead scatterers to amplify multiple Coulomb scattering. Monte Carlo simulations confirmed a significant reduction in secondary neutrons due to the neutron absorber. In conclusion, our system generates minibeams with a uniform dose envelope. Excellent depth-dose modulation using scatterers facilitates simultaneous skin protection and shallow-depth tumor treatment. By mitigating secondary neutrons, the system can also reduce radiation toxicity, enhancing its clinical viability.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 on","pages":"1123 - 1128"},"PeriodicalIF":0.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145341134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-06DOI: 10.1007/s40042-025-01405-7
M. R. Alipoor
The purpose of the research presented is to investigate the protective capacities against gamma-ray and X-ray of high-density polyethylene materials reinforced with different concentrations oxide of lead and bismuth. The materials under study were exposed to a range of gamma ray energy levels and their protective efficiency is quantitatively evaluated through the analytical measurement of several parameters, including mass attenuation coefficient, linear attenuation coefficient and half-value layer. The results derived from both theoretical calculations by Phy-x and simulated outcomes by the Geant4 simulation tool demonstrate a commendable level of correlation and consistency, thereby reinforcing the validity of the findings reported in this study. As photon energy increased, the radiation protection efficiency decreased, while as thickness increased, the radiation protection efficiency increased. It is particularly noteworthy that high-density polyethylene composites, reinforced with specific concentrations of lead and bismuth, exhibit superior radiation shielding properties. This remarkable performance can be attributed to the strategic dispersion of heavy metals as well as their associated density characteristics, which together contribute to the effectiveness of these materials in reducing harmful radiation. Finally, the fast neutron removal cross section was also calculated for polymer composites. In conclusion, these findings emphasize the potential of lead–bismuth-reinforced high-density polyethylene composites as promising materials for radiation shielding applications.
{"title":"Enhancing gamma-ray shielding performance of HDPE composites using PbO and Bi₂O₃ reinforcements","authors":"M. R. Alipoor","doi":"10.1007/s40042-025-01405-7","DOIUrl":"10.1007/s40042-025-01405-7","url":null,"abstract":"<div><p>The purpose of the research presented is to investigate the protective capacities against gamma-ray and X-ray of high-density polyethylene materials reinforced with different concentrations oxide of lead and bismuth. The materials under study were exposed to a range of gamma ray energy levels and their protective efficiency is quantitatively evaluated through the analytical measurement of several parameters, including mass attenuation coefficient, linear attenuation coefficient and half-value layer. The results derived from both theoretical calculations by Phy-x and simulated outcomes by the Geant4 simulation tool demonstrate a commendable level of correlation and consistency, thereby reinforcing the validity of the findings reported in this study. As photon energy increased, the radiation protection efficiency decreased, while as thickness increased, the radiation protection efficiency increased. It is particularly noteworthy that high-density polyethylene composites, reinforced with specific concentrations of lead and bismuth, exhibit superior radiation shielding properties. This remarkable performance can be attributed to the strategic dispersion of heavy metals as well as their associated density characteristics, which together contribute to the effectiveness of these materials in reducing harmful radiation. Finally, the fast neutron removal cross section was also calculated for polymer composites. In conclusion, these findings emphasize the potential of lead–bismuth-reinforced high-density polyethylene composites as promising materials for radiation shielding applications.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"243 - 253"},"PeriodicalIF":0.9,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-04DOI: 10.1007/s40042-025-01406-6
Hyunjin Ji
The electrical property changes in monolayer MoS2 transistors were analyzed after bistriflimide (H-TFSI) treatment, which dissociates into hydrogen cations and TFSI anions in solution, followed by intensive acetone rinsing. Charge trapping effects were examined by varying the delay time (0.1, 1, 5 s) between voltage application and current measurement, revealing changes in electrical hysteresis. While degradation in device performance was primarily attributed to TFSI anion adsorbates, a transition to counterclockwise hysteresis was observed as H+ ion effects became more pronounced, leading to a reduction of degradation or slight improvement in performance. To further assess interface trap characteristics, low-frequency noise modeling was conducted for each device condition, enabling the extraction of trap density and Coulomb scattering effects. The reversibility of H-TFSI treatment effects was also evaluated through a 24-h acetone rinse. The results indicated that the impact of H+ ions was almost entirely reversed, restoring the interface trap density to its initial state. However, carrier mobility did not fully recover, suggesting that residual TFSI anion adsorbates remained on the surface, contributing to persistent degradation. These findings demonstrate that hydrogen cations can sufficiently penetrate and exit from both MoS2 and SiO2, allowing defect neutralization to be reset through aggressive rinsing. In contrast, TFSI anions, which adsorb onto the surface, are not fully removable using liquid-phase cleaning methods. This highlights a potential processing strategy in which a passivation layer, impermeable to large molecules, is placed on top of the device before H-TFSI treatment, enabling selective defect passivation solely by H+ ions.
{"title":"Impact of prior reactions on the recovery behavior of MoS2 transistors","authors":"Hyunjin Ji","doi":"10.1007/s40042-025-01406-6","DOIUrl":"10.1007/s40042-025-01406-6","url":null,"abstract":"<div><p>The electrical property changes in monolayer MoS<sub>2</sub> transistors were analyzed after bistriflimide (H-TFSI) treatment, which dissociates into hydrogen cations and TFSI anions in solution, followed by intensive acetone rinsing. Charge trapping effects were examined by varying the delay time (0.1, 1, 5 s) between voltage application and current measurement, revealing changes in electrical hysteresis. While degradation in device performance was primarily attributed to TFSI anion adsorbates, a transition to counterclockwise hysteresis was observed as H<sup>+</sup> ion effects became more pronounced, leading to a reduction of degradation or slight improvement in performance. To further assess interface trap characteristics, low-frequency noise modeling was conducted for each device condition, enabling the extraction of trap density and Coulomb scattering effects. The reversibility of H-TFSI treatment effects was also evaluated through a 24-h acetone rinse. The results indicated that the impact of H<sup>+</sup> ions was almost entirely reversed, restoring the interface trap density to its initial state. However, carrier mobility did not fully recover, suggesting that residual TFSI anion adsorbates remained on the surface, contributing to persistent degradation. These findings demonstrate that hydrogen cations can sufficiently penetrate and exit from both MoS<sub>2</sub> and SiO<sub>2</sub>, allowing defect neutralization to be reset through aggressive rinsing. In contrast, TFSI anions, which adsorb onto the surface, are not fully removable using liquid-phase cleaning methods. This highlights a potential processing strategy in which a passivation layer, impermeable to large molecules, is placed on top of the device before H-TFSI treatment, enabling selective defect passivation solely by H<sup>+</sup> ions.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"292 - 298"},"PeriodicalIF":0.9,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-04DOI: 10.1007/s40042-025-01396-5
Ozlem Tari, Hamit Yurtseven
This study gives our calculation of the (T-X) phase diagram for the mainly smectic–hexatic phase transitions in the binary mixtures of THI14 + MPR6. By expanding the free energy in terms of the order parameters with the biquadratic coupling in the Landau mean field model, the phase line equations are obtained and they are fitted to the experimental (T-X) data from the literature. The first-order and the second-order transitions are considered between the smectic and hexatic phases in the existence of the triple and tricritical (TCP) points in those binary mixtures. Our study indicates that the observed behavior of the first-order and the second-order (smectic–hexatic) transitions can be characterized in the binary mixtures studied by the Landau models given here.
{"title":"T–X phase diagram calculated for the tilted smectic–hexatic transitions in the binary mixtures (THI14 + MPR6)","authors":"Ozlem Tari, Hamit Yurtseven","doi":"10.1007/s40042-025-01396-5","DOIUrl":"10.1007/s40042-025-01396-5","url":null,"abstract":"<div><p>This study gives our calculation of the <span>(T-X)</span> phase diagram for the mainly smectic–hexatic phase transitions in the binary mixtures of THI14 + MPR6. By expanding the free energy in terms of the order parameters with the biquadratic coupling in the Landau mean field model, the phase line equations are obtained and they are fitted to the experimental <span>(T-X)</span> data from the literature. The first-order and the second-order transitions are considered between the smectic and hexatic phases in the existence of the triple and tricritical (TCP) points in those binary mixtures. Our study indicates that the observed behavior of the first-order and the second-order (smectic–hexatic) transitions can be characterized in the binary mixtures studied by the Landau models given here.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 3","pages":"260 - 274"},"PeriodicalIF":0.9,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}