Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583214
Q. Liang, Junke Jiang, Xiang Sun, Xianping Chen
In this work, density functional theory (DFT) computations with van der Waals (vdW) corrections were performed to investigate the dihydrogen bondings and their effects on the electronic and work functions of graphane/silicane bilayer and fully hydrogenated hexagonal boron nitride (fhBN)/silicane bilayer. The type of dihydrogen bonding (C-H···H-Si or N-H···H-Si) greatly affected the stability, electricity and photology of the bilayers, leading to significant band gap and work function modifications of the nanosystems. Interestingly, the fhBN/silicane bilayer combined by N-H···H-Si bilayers has an energy gap (~0.533 eV) much lower than those of individual building blocks fHBN and silicane monolayer, and the work function (3.11 eV) of the fhBN/silicane bilayer combined by B-H···H-Si bilayers is much lower than that of graphene and other traditional metals. Changing the direction and strength of external electric field can effectively tune the band gap and work function of the bilayers, correspondingly cause a semiconductor-metal transition in the band gap and the work function showed a widely tunable range. These results offer new opportunities for developing electronic and opto-electronic devices based on graphane/silicane bilayer and fhBN/silicane bilayer.
{"title":"Electronic properties and work functions of silicane/fully hydrogenated h-BN and silicane/graphane nanosheets","authors":"Q. Liang, Junke Jiang, Xiang Sun, Xianping Chen","doi":"10.1109/ICEPT.2016.7583214","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583214","url":null,"abstract":"In this work, density functional theory (DFT) computations with van der Waals (vdW) corrections were performed to investigate the dihydrogen bondings and their effects on the electronic and work functions of graphane/silicane bilayer and fully hydrogenated hexagonal boron nitride (fhBN)/silicane bilayer. The type of dihydrogen bonding (C-H···H-Si or N-H···H-Si) greatly affected the stability, electricity and photology of the bilayers, leading to significant band gap and work function modifications of the nanosystems. Interestingly, the fhBN/silicane bilayer combined by N-H···H-Si bilayers has an energy gap (~0.533 eV) much lower than those of individual building blocks fHBN and silicane monolayer, and the work function (3.11 eV) of the fhBN/silicane bilayer combined by B-H···H-Si bilayers is much lower than that of graphene and other traditional metals. Changing the direction and strength of external electric field can effectively tune the band gap and work function of the bilayers, correspondingly cause a semiconductor-metal transition in the band gap and the work function showed a widely tunable range. These results offer new opportunities for developing electronic and opto-electronic devices based on graphane/silicane bilayer and fhBN/silicane bilayer.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"25 1","pages":"636-641"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81961946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583316
Chen Si, Q. Fei, Z. Jingyi, An Tong
Current densities of 1.5ASD and additive concentrations of 15ml/L were used to electroplate the copper into TSV to fabricate the test samples. The samples were annealed at 425°C for 30 minutes in a vacuum furnace with the heating rate of 10°C /min. The annealed samples were thermal cycled with temperature range (25~325°C), heating & cooling rate (10 °C/min), dwell time of 2 min at the peak and bottom temperature in each cycle. The copper protrusion and microstructure evolution are examined during the thermal cycling. The results show that, the protrusion value increases gradually with the thermal cycling number increases, and reaches stable value of 2.152μm after the cycling number increases to 30 cycles. The average copper grain size grows larger as the thermal cycling number accumulates, suggesting grain growth occurs during the thermal cycling. The sample with greater copper grain size has a greater protrusion after the thermal cycling test.
{"title":"TSV-Cu protrusion induced by thermal cycling test","authors":"Chen Si, Q. Fei, Z. Jingyi, An Tong","doi":"10.1109/ICEPT.2016.7583316","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583316","url":null,"abstract":"Current densities of 1.5ASD and additive concentrations of 15ml/L were used to electroplate the copper into TSV to fabricate the test samples. The samples were annealed at 425°C for 30 minutes in a vacuum furnace with the heating rate of 10°C /min. The annealed samples were thermal cycled with temperature range (25~325°C), heating & cooling rate (10 °C/min), dwell time of 2 min at the peak and bottom temperature in each cycle. The copper protrusion and microstructure evolution are examined during the thermal cycling. The results show that, the protrusion value increases gradually with the thermal cycling number increases, and reaches stable value of 2.152μm after the cycling number increases to 30 cycles. The average copper grain size grows larger as the thermal cycling number accumulates, suggesting grain growth occurs during the thermal cycling. The sample with greater copper grain size has a greater protrusion after the thermal cycling test.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"14 1","pages":"1095-1098"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85326388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583175
Jianwei Hua, Chunyue Huang, Ying Liang, Tian-ming Li, Long Zhang
In this paper, the finite element model of optical interconnection module is established, and the finite element analysis of the model is carried out under the condition of random vibration loading based on ANSYS software. The distribution law of the stress and strain of the solder joint array is obtained. As an example, the stress and strain of the solder joint array with single factor variation of the shape parameters of the model were analyzed under the random vibration condition. The results show that the distribution of the stress and strain of the solder joint array is not uniform, and the change tendency of the stress and strain is presented by the inner layer of the solder joint to the outer solder joint. Among them, the maximum stress strain value of solder joints in the corner of the outer layer of the solder joints array region. With the increase of height of solder joint, solder joint array should strain showed a tendency to increase, along with increase of the volume of solder joint, solder joint array should stress and strain values decrease gradually, with pad diameter increases, the solder joint array should stress and strain value increases.
{"title":"Analysis of solder joint shape parameters on the stress and strain of the solder joint in the random vibration condition","authors":"Jianwei Hua, Chunyue Huang, Ying Liang, Tian-ming Li, Long Zhang","doi":"10.1109/ICEPT.2016.7583175","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583175","url":null,"abstract":"In this paper, the finite element model of optical interconnection module is established, and the finite element analysis of the model is carried out under the condition of random vibration loading based on ANSYS software. The distribution law of the stress and strain of the solder joint array is obtained. As an example, the stress and strain of the solder joint array with single factor variation of the shape parameters of the model were analyzed under the random vibration condition. The results show that the distribution of the stress and strain of the solder joint array is not uniform, and the change tendency of the stress and strain is presented by the inner layer of the solder joint to the outer solder joint. Among them, the maximum stress strain value of solder joints in the corner of the outer layer of the solder joints array region. With the increase of height of solder joint, solder joint array should strain showed a tendency to increase, along with increase of the volume of solder joint, solder joint array should stress and strain values decrease gradually, with pad diameter increases, the solder joint array should stress and strain value increases.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"16 4 1","pages":"455-460"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90772557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583105
Yang Xu, Teng Wang, Cheng Yang, Ronghe Wang
Cloth-like electronic devices are of great interest for the rapid development of wearable electronics. Herein we report a flexible and high-performance supercapacitor constructed on conductive cloth. In order to improve the electrochemical capacity, nickel nanocone arrays were electrodeposited onto a piece of conductive cloth (nickel plated polyester plain cloth) for the nickel current collector (NCC). The NCC@MnO2 and NCC@polypyrrole were prepared as binder-free electrodes via a facile electro-deposition process for both cathode and anode. The NCC contributes to enhance electron transport/collection and makes it easy to release stress generated in the charge-discharge cycles of the active materials. Due to the design of highly ordered array electrode architecture, our NCC electrodes display excellent capacitive performance with high gravimetric and areal capacitances, excellent rate capability and outstanding cycling stability. Furthermore, the as-obtained pseudo-supercapacitor shows unique mechanical property of flexibility due to the presence of conductive cloth. The present study provides an alternative strategy for the development of cost effective, flexible, and high-performance energy storage devices.
{"title":"A high-performance flexible pseudo-supercapacitor constructed on conductive cloth","authors":"Yang Xu, Teng Wang, Cheng Yang, Ronghe Wang","doi":"10.1109/ICEPT.2016.7583105","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583105","url":null,"abstract":"Cloth-like electronic devices are of great interest for the rapid development of wearable electronics. Herein we report a flexible and high-performance supercapacitor constructed on conductive cloth. In order to improve the electrochemical capacity, nickel nanocone arrays were electrodeposited onto a piece of conductive cloth (nickel plated polyester plain cloth) for the nickel current collector (NCC). The NCC@MnO2 and NCC@polypyrrole were prepared as binder-free electrodes via a facile electro-deposition process for both cathode and anode. The NCC contributes to enhance electron transport/collection and makes it easy to release stress generated in the charge-discharge cycles of the active materials. Due to the design of highly ordered array electrode architecture, our NCC electrodes display excellent capacitive performance with high gravimetric and areal capacitances, excellent rate capability and outstanding cycling stability. Furthermore, the as-obtained pseudo-supercapacitor shows unique mechanical property of flexibility due to the presence of conductive cloth. The present study provides an alternative strategy for the development of cost effective, flexible, and high-performance energy storage devices.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"52 1","pages":"133-137"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90818682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583246
K. Zhou, D. Yi, Ming Li, Liancheng Zhao, Liming Gao
Interface (IF) layers have great influence on the performance of InAs/GaSb type-II superlattice, which can not only balance the strain between adjacent layers, but also change the absorption cutoff wavelength and relative absorption strength. In this study, a modified k·p method based on envelope function approximation is used to theoretically investigate different IF influence on Auger recombination, absorption cutoff wavelength and relative absorption strength. The results of modeling and simulation show that different optical properties can be obtained by different IF.
{"title":"Modeling and simulation of InAs/GaSb type-II superlattices with different interface layers","authors":"K. Zhou, D. Yi, Ming Li, Liancheng Zhao, Liming Gao","doi":"10.1109/ICEPT.2016.7583246","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583246","url":null,"abstract":"Interface (IF) layers have great influence on the performance of InAs/GaSb type-II superlattice, which can not only balance the strain between adjacent layers, but also change the absorption cutoff wavelength and relative absorption strength. In this study, a modified k·p method based on envelope function approximation is used to theoretically investigate different IF influence on Auger recombination, absorption cutoff wavelength and relative absorption strength. The results of modeling and simulation show that different optical properties can be obtained by different IF.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"780-783"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88485201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quantum dots (QDs) have been developed as a promising light-converting material for light-emitting diodes (LEDs). However, QDs-polymer film always shows bad thermal performance. In this paper, a new designed structure of QDs-polymer film via electrospinning was proposed to enhance the thermal conductivity of the QDs-polymer film. After the measurement of density, specific heat and thermal diffusivity, the thermal conductivities of the proposed and traditional QDs-polymer films were calculated and compared. Finite-element simulation was conducted to assess the working temperature when both kinds of QDs-polymer films were packaged in the remote QD-LEDs. Results show that the thermal conductivities in thickness direction and in plane have been enhanced by 64.6% and 423.1% at 25 °C. The highest temperature in QDs-polymer film is decreased from 92.9 °C to 88.0 °C at the driving current of 300 mA.
{"title":"Enhanced thermal conductivity of QDs-polymer film for light-emitting diodes via electrospinning","authors":"Xiang Lei, Huai Zheng, Xing Guo, Zefeng Zhang, Jiading Wu, Chunlin Xu, Sheng Liu","doi":"10.1109/ICEPT.2016.7583296","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583296","url":null,"abstract":"Quantum dots (QDs) have been developed as a promising light-converting material for light-emitting diodes (LEDs). However, QDs-polymer film always shows bad thermal performance. In this paper, a new designed structure of QDs-polymer film via electrospinning was proposed to enhance the thermal conductivity of the QDs-polymer film. After the measurement of density, specific heat and thermal diffusivity, the thermal conductivities of the proposed and traditional QDs-polymer films were calculated and compared. Finite-element simulation was conducted to assess the working temperature when both kinds of QDs-polymer films were packaged in the remote QD-LEDs. Results show that the thermal conductivities in thickness direction and in plane have been enhanced by 64.6% and 423.1% at 25 °C. The highest temperature in QDs-polymer film is decreased from 92.9 °C to 88.0 °C at the driving current of 300 mA.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"13 1","pages":"1000-1003"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89410087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583268
Gaowei Xu, L. Luo, Tao Zheng
A novel integrated passive devices fabrication technique which combines wafer level packaging, bulk Si etching and stencil printing technologies to prepare silicon based inductors with high density and high-quality factor is presented. A series of high-quality inductors with Ni-Zn/BCB composite magnetic core is designed and fabricated with two-step back-etching and stencil printing technologies on low resistive silicon wafer. By using this technology, the inductance density of inductors is enhanced together with the high quality. Compared to the normal inductors, the inductors with backside magnetic composite cores demonstrate significantly higher inductance density, increasing by 42% in average. The measured Q factor of 363 nH inductor with backside magnetic composite cores reaches 8.9 at 30.2 MHz.
{"title":"A novel wafer level high Q planar inductor using Ni-Zn ferrite/BCB composite thick film","authors":"Gaowei Xu, L. Luo, Tao Zheng","doi":"10.1109/ICEPT.2016.7583268","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583268","url":null,"abstract":"A novel integrated passive devices fabrication technique which combines wafer level packaging, bulk Si etching and stencil printing technologies to prepare silicon based inductors with high density and high-quality factor is presented. A series of high-quality inductors with Ni-Zn/BCB composite magnetic core is designed and fabricated with two-step back-etching and stencil printing technologies on low resistive silicon wafer. By using this technology, the inductance density of inductors is enhanced together with the high quality. Compared to the normal inductors, the inductors with backside magnetic composite cores demonstrate significantly higher inductance density, increasing by 42% in average. The measured Q factor of 363 nH inductor with backside magnetic composite cores reaches 8.9 at 30.2 MHz.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"10 1","pages":"870-874"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78359251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583110
Shuwen Wu, Jinhui Li, Guoping Zhang, R. Sun, C. Wong
In this work, graphene/polyurethane composites with characteristic of covalently bonding and Diels-Alder (DA) chemistry was developed. Thereinto, graphene was functionalized as filler to enhance mechanical properties and further used as medium for absorbing the power of infrared (IR) laser and transferring it to heat for repairing the composites based on the reversible DA chemistry. Besides, the monodisperse graphene was used as high dielectric material to improve the dielectric properties of the composites. Therefore, the as-prepared graphene/polyurethane composites possess excellent mechanical properties, good dielectric properties and super repairing ability by means of IR laser. All the results indicated that the novel graphene/polyurethane could be considered as the candidate for intelligent components and the areas of encapsulated electronic components.
{"title":"High mechanical strength and high dielectric graphene/polyuthane composites healded by near infrared laser","authors":"Shuwen Wu, Jinhui Li, Guoping Zhang, R. Sun, C. Wong","doi":"10.1109/ICEPT.2016.7583110","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583110","url":null,"abstract":"In this work, graphene/polyurethane composites with characteristic of covalently bonding and Diels-Alder (DA) chemistry was developed. Thereinto, graphene was functionalized as filler to enhance mechanical properties and further used as medium for absorbing the power of infrared (IR) laser and transferring it to heat for repairing the composites based on the reversible DA chemistry. Besides, the monodisperse graphene was used as high dielectric material to improve the dielectric properties of the composites. Therefore, the as-prepared graphene/polyurethane composites possess excellent mechanical properties, good dielectric properties and super repairing ability by means of IR laser. All the results indicated that the novel graphene/polyurethane could be considered as the candidate for intelligent components and the areas of encapsulated electronic components.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"189 1","pages":"157-161"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75480649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583358
Daotan Lin, Zhe Sun
Plastic encapsulated microelectronics (PEMs) is widely used because of its smaller size, lower cost and lighter weight. Nowadays, the reliability and failure analysis of PEMs become the focus. However, the location of failure is a difficulty. In this paper, the principle of three-dimensional (3D) X-ray microscopy as a non-destructive method would be introduced and the common failure modes of PEMs would be summarized. Moreover, the application of 3D X-ray microscopy in failure analysis for PEMs would be presented. The internal structure of PEMs could be reconstructed by 3D X-ray microscopy. The type of failure could be distinguished by this non-destructive method. Compared to 2D X-ray, the defects of PEMs could be located in three-dimensional space by means of 3D X-ray microscopy.
{"title":"Application of three-dimensional X-ray microscopy in failure analysis for plastic encapsulated microelectronics","authors":"Daotan Lin, Zhe Sun","doi":"10.1109/ICEPT.2016.7583358","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583358","url":null,"abstract":"Plastic encapsulated microelectronics (PEMs) is widely used because of its smaller size, lower cost and lighter weight. Nowadays, the reliability and failure analysis of PEMs become the focus. However, the location of failure is a difficulty. In this paper, the principle of three-dimensional (3D) X-ray microscopy as a non-destructive method would be introduced and the common failure modes of PEMs would be summarized. Moreover, the application of 3D X-ray microscopy in failure analysis for PEMs would be presented. The internal structure of PEMs could be reconstructed by 3D X-ray microscopy. The type of failure could be distinguished by this non-destructive method. Compared to 2D X-ray, the defects of PEMs could be located in three-dimensional space by means of 3D X-ray microscopy.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"15 1","pages":"1284-1287"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78308642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583180
Yu-Bo Guo, Yangjian Xu, L. Liang, Y. Liu
In this paper, 3-D finite element (FE) models were established to investigate the fatigue lives of bonding wire in different power packages in thermal cycling test. Meanwhile, three types of packages were tested. Bonding wire lift-off and neck failures took place during test, which were caused by the coefficient of thermal expansion (CTE) mismatch between wire and chip. Finally, a strain-based life prediction relation for thermal cycling test was proposed by combining the experiment results with simulation data.
{"title":"Bonding wire fatigue life prediction of power module in thermal cycling test","authors":"Yu-Bo Guo, Yangjian Xu, L. Liang, Y. Liu","doi":"10.1109/ICEPT.2016.7583180","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583180","url":null,"abstract":"In this paper, 3-D finite element (FE) models were established to investigate the fatigue lives of bonding wire in different power packages in thermal cycling test. Meanwhile, three types of packages were tested. Bonding wire lift-off and neck failures took place during test, which were caused by the coefficient of thermal expansion (CTE) mismatch between wire and chip. Finally, a strain-based life prediction relation for thermal cycling test was proposed by combining the experiment results with simulation data.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"20 1","pages":"482-485"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73092713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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