Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583277
Y. Gao, Jie Li, Qiang Li, Guokun Ma, Ximeng Yu, Huaiwu Zhang
Li0.63Zn0.37Fe2O4-xCaTiO3 (x=0wt%, 4wt%, 8wt%, 12wt%, 16wt%) composites were prepared by the solid state reaction method and sintered at 920 °C with slight Bi2O3 additive. The phase formations, structure, magnetic and dielectric properties of composites were investigated. The results revealed that the composites contained two phase formations, with no other phases. Scanning electron microscope and bulk density showed that densification of composites was enhanced by adding CaTiO3material. Vibrating sample magnetometer indicated the saturation magnetization decreased from 46.2 emu/g to 30.8 emu/g, while the coercivity increased from 38.7 Oe to 46.8 Oe. Meanwhile, LiZn-CTO composites possessed high dielectric permittivity (ε'max=31.2) and magnetic permeability (μ'max=20.6), which can be used in LTCC integrated devices such as electromagnetic interference filters and antennas.
{"title":"Magnetic and dielectric properties of Li0.63Zn0.37Fe2O4−xCaTiO3 composites for LTCC application","authors":"Y. Gao, Jie Li, Qiang Li, Guokun Ma, Ximeng Yu, Huaiwu Zhang","doi":"10.1109/ICEPT.2016.7583277","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583277","url":null,"abstract":"Li<sub>0.63</sub>Zn<sub>0.37</sub>Fe<sub>2</sub>O<sub>4-x</sub>CaTiO<sub>3</sub> (x=0wt%, 4wt%, 8wt%, 12wt%, 16wt%) composites were prepared by the solid state reaction method and sintered at 920 °C with slight Bi<sub>2</sub>O<sub>3</sub> additive. The phase formations, structure, magnetic and dielectric properties of composites were investigated. The results revealed that the composites contained two phase formations, with no other phases. Scanning electron microscope and bulk density showed that densification of composites was enhanced by adding CaTiO<sub>3</sub>material. Vibrating sample magnetometer indicated the saturation magnetization decreased from 46.2 emu/g to 30.8 emu/g, while the coercivity increased from 38.7 Oe to 46.8 Oe. Meanwhile, LiZn-CTO composites possessed high dielectric permittivity (ε'<sub>max</sub>=31.2) and magnetic permeability (μ'<sub>max</sub>=20.6), which can be used in LTCC integrated devices such as electromagnetic interference filters and antennas.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"43 1","pages":"910-914"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89167551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583279
Gaowei Xu, W. Gai, Tao Zheng, Defeng Liang, L. Luo, Ju-Yung Chen
A kind of integration node with six-microphone array for wireless sensor network (WSN) using 3D-SiP technology was developed. The node includes sensing module, communication module, battery compartment and node case. Communication and sensing modules were stacked by using vertical interconnections (including stand-off and stamp-hole) method. The sensing module contains six MEMS microphones and corresponding sound signal processing chips, master chip of signal processing, etc. On-line test result showed that the fabricated node has good performances, i.e. target recognition and classification. Vibration and shock test results showed that the integrated node has good reliability and environmental adaptability.
{"title":"Integrated manufacturing of microphone-array node for wireless sensor network (WSN)","authors":"Gaowei Xu, W. Gai, Tao Zheng, Defeng Liang, L. Luo, Ju-Yung Chen","doi":"10.1109/ICEPT.2016.7583279","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583279","url":null,"abstract":"A kind of integration node with six-microphone array for wireless sensor network (WSN) using 3D-SiP technology was developed. The node includes sensing module, communication module, battery compartment and node case. Communication and sensing modules were stacked by using vertical interconnections (including stand-off and stamp-hole) method. The sensing module contains six MEMS microphones and corresponding sound signal processing chips, master chip of signal processing, etc. On-line test result showed that the fabricated node has good performances, i.e. target recognition and classification. Vibration and shock test results showed that the integrated node has good reliability and environmental adaptability.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"61 1","pages":"919-922"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89178314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583082
Lan Peng, Soon-Wook Kim, F. Inoue, Teng Wang, A. Phommahaxay, P. Verdonck, A. Jourdain, J. de Vos, E. Sleeckx, H. Struyf, Andy Miller, G. Beyer, E. Beyne, Mike Soules, S. Lutter
We investigate multi-stack dielectric wafer bonding through two integration schemes, which provide different paths to realize vertical integration of multiple device layers. Key process steps are evaluated and optimized to enable void-less bonds at different bonding layers. Meanwhile, issues related to the wafer edge are discovered during the backside processing and the impact is analyzed. Finally, N=4 stacks are successfully demonstrated with high quality interfaces formed by dielectric bonding.
{"title":"Development of multi-stack dielectric wafer bonding","authors":"Lan Peng, Soon-Wook Kim, F. Inoue, Teng Wang, A. Phommahaxay, P. Verdonck, A. Jourdain, J. de Vos, E. Sleeckx, H. Struyf, Andy Miller, G. Beyer, E. Beyne, Mike Soules, S. Lutter","doi":"10.1109/ICEPT.2016.7583082","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583082","url":null,"abstract":"We investigate multi-stack dielectric wafer bonding through two integration schemes, which provide different paths to realize vertical integration of multiple device layers. Key process steps are evaluated and optimized to enable void-less bonds at different bonding layers. Meanwhile, issues related to the wafer edge are discovered during the backside processing and the impact is analyzed. Finally, N=4 stacks are successfully demonstrated with high quality interfaces formed by dielectric bonding.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"22-25"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83043331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Using first-principles calculation within density functional theory, we study the gas (H2O, H2, H2S, and CO2) adsorption properties of single-layer indium nitride (InN). The four different adsorption sites (Bridge, In, N, Hollow) are chosen to investigate and the most sensitive adsorption site is found (N site for H2 and H2O gases; In site for H2S; center site for CO2) based on the adsorption energy, band gap and charge transfer. Through our research, the results indicate that InN is sensitive to NH3 and H2O. It is shown that H2 gas molecules act as charge acceptors for the monolayer, except H2S, H2O adsorption which are found to be a charge donor. We perform a perpendicular electric field to the system and find its enhancement effect for adsorption energy of gas adsorption. Our theoretical results indicates that monolayer InN is a promising candidate for gas sensing applications.
{"title":"First-principles study of gas adsorptin on indium nitride monolayer as gas sensor applications","authors":"Xiang Sun, Yiping Huang, Junke Jiang, Q. Liang, R. Meng, Chun-Jian Tan, Qun Yang, Xanping Chen","doi":"10.1109/ICEPT.2016.7583243","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583243","url":null,"abstract":"Using first-principles calculation within density functional theory, we study the gas (H<sub>2</sub>O, H<sub>2</sub>, H<sub>2</sub>S, and CO<sub>2</sub>) adsorption properties of single-layer indium nitride (InN). The four different adsorption sites (Bridge, In, N, Hollow) are chosen to investigate and the most sensitive adsorption site is found (N site for H<sub>2</sub> and H<sub>2</sub>O gases; In site for H<sub>2</sub>S; center site for CO<sub>2</sub>) based on the adsorption energy, band gap and charge transfer. Through our research, the results indicate that InN is sensitive to NH<sub>3</sub> and H<sub>2</sub>O. It is shown that H<sub>2</sub> gas molecules act as charge acceptors for the monolayer, except H<sub>2</sub>S, H<sub>2</sub>O adsorption which are found to be a charge donor. We perform a perpendicular electric field to the system and find its enhancement effect for adsorption energy of gas adsorption. Our theoretical results indicates that monolayer InN is a promising candidate for gas sensing applications.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"73 1","pages":"767-770"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83195914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583374
Xi Yang, Zili Wang, Yi Ren, Bo Sun
The heat dissipation is a crucial factor for the reliability of high power white LEDs(HPLEDs). In this paper, a novel thermal pad structure is presented for HPLEDs, a theoretic thermal transfer model is built to analyze the thermal transferring in LED component. Besides, the thermal simulations of the LED component with the typical or the novel thermal pad are conducted, the temperature distributions are obtained to assess the thermal performance of the LED components. Moreover, the material of the substrate is changed into FR4 to investigate the advantage of the novel thermal pad structure in LED component. The thermal conductivity gap between the thermal pad and the packaging material is recognized as the most important factor on the selection of thermal pad structure.
{"title":"Thermal effects of packaging material and structure on high power white LEDs","authors":"Xi Yang, Zili Wang, Yi Ren, Bo Sun","doi":"10.1109/ICEPT.2016.7583374","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583374","url":null,"abstract":"The heat dissipation is a crucial factor for the reliability of high power white LEDs(HPLEDs). In this paper, a novel thermal pad structure is presented for HPLEDs, a theoretic thermal transfer model is built to analyze the thermal transferring in LED component. Besides, the thermal simulations of the LED component with the typical or the novel thermal pad are conducted, the temperature distributions are obtained to assess the thermal performance of the LED components. Moreover, the material of the substrate is changed into FR4 to investigate the advantage of the novel thermal pad structure in LED component. The thermal conductivity gap between the thermal pad and the packaging material is recognized as the most important factor on the selection of thermal pad structure.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"4 4 1","pages":"1350-1354"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83478968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583174
Yuexing Wang, X. Long, Yao Yao
As the trend develops towards miniaturization to meet the requirement of performance improvement in portable consumer electronics, Joule heating has become a key reliability issue in the future electric packages, especially in the 3D integrated chip, in which the micro-bump is approaching 10μm. Heat flux must be dissipated away by temperature gradient which could reach 1000K/cm under which condition thermomigration will occur and induce the mass migration from the cold to the hot end of solders. The mass migration will result in the initiation and propagation of voids in the solder joint and, eventually, the whole failure of the device. In this paper, a numerical thermal-electrical finite element simulation is conducted to analyze the Joule heating at the current crowding zone and it is found that the joule heating is extremely high when the current density is above 103 A/cm. An obvious temperature gradient is observed so that the thermomigration effect cannot be ignored when taking into account the void evolution problems in the solder joints. Based on the mass diffusion model, a pancake void propagation model considering the thermomigration force is proposed firstly and then the analytical void velocity is obtained which gives some insights into the reliability of the future interconnect under the condition of high Joule heating.
随着小型化趋势的发展，以满足便携式消费电子产品性能提升的要求，焦耳加热已成为未来电子封装的关键可靠性问题，特别是在微凸度接近10μm的3D集成芯片中。在温度梯度达到1000K/cm的条件下，焊料会发生热迁移，导致质量从冷端向热端迁移。质量的迁移将导致焊点中空洞的产生和扩展，并最终导致整个器件的失效。本文通过数值热电有限元模拟分析了电流拥挤区的焦耳发热，发现当电流密度大于103 a /cm时，焦耳发热非常高。观察到明显的温度梯度，因此在考虑焊点的空洞演化问题时，热迁移效应不可忽视。在质量扩散模型的基础上，首先提出了考虑热迁移力的煎饼孔洞扩展模型，然后得到了解析孔洞速度，对未来高焦耳加热条件下互连的可靠性有一定的指导意义。
{"title":"Theoretical study of thermomigration effect on the pancake void propagation at the current crowding zone of solder joints","authors":"Yuexing Wang, X. Long, Yao Yao","doi":"10.1109/ICEPT.2016.7583174","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583174","url":null,"abstract":"As the trend develops towards miniaturization to meet the requirement of performance improvement in portable consumer electronics, Joule heating has become a key reliability issue in the future electric packages, especially in the 3D integrated chip, in which the micro-bump is approaching 10μm. Heat flux must be dissipated away by temperature gradient which could reach 1000K/cm under which condition thermomigration will occur and induce the mass migration from the cold to the hot end of solders. The mass migration will result in the initiation and propagation of voids in the solder joint and, eventually, the whole failure of the device. In this paper, a numerical thermal-electrical finite element simulation is conducted to analyze the Joule heating at the current crowding zone and it is found that the joule heating is extremely high when the current density is above 103 A/cm. An obvious temperature gradient is observed so that the thermomigration effect cannot be ignored when taking into account the void evolution problems in the solder joints. Based on the mass diffusion model, a pancake void propagation model considering the thermomigration force is proposed firstly and then the analytical void velocity is obtained which gives some insights into the reliability of the future interconnect under the condition of high Joule heating.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"25 1","pages":"451-454"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83511325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583288
Wen-jing Ma, C. Ke, Min-bo Zhou, Xin-Ping Zhang
The existence of microcracks in solder interconnects plays a key role in determining the performance and reliability of solder interconnects, in particular, may increase significantly the potential for brittle interfacial fracture of interconnects and reduce the thermal conductivity of the systems. Thus, characterization of the formation and propagation of microcracks is very important for evaluating the performance and reliability of solder interconnects. In this paper, a phase field crystal model is utilized to study the morphological evolution and propagation of microcracks in a typical solder joint consisting of the Sn-based solder and Cu substrate. The simulation results show that the initial crack notch configuration affects sigificantly the crack propagation. The length and area fraction of the crack gradually increase with the simulation time, while the crack propagation rate decreases initially and then becomes stabilized with the simulation time. The atomic density in the initial crack notch can also affect the crack propagation. The number and size of the crack branches increase with increasing both the atomic density in the initial crack notch and simulation time. When the atomic density in the initial crack notch is 0.9, new cracks form around the pre-existing cracks, and the propagation velocities of cracks along the x and y directions are the same. When the atomic density in the initial crack notch is 0.6, the cracks propagate faster along the y direction than the x direction.
{"title":"Phase field crystal simulation of morphological evolution and propagation of microcracks in the intermetallic compound layer of Sn/Cu solder interconnects","authors":"Wen-jing Ma, C. Ke, Min-bo Zhou, Xin-Ping Zhang","doi":"10.1109/ICEPT.2016.7583288","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583288","url":null,"abstract":"The existence of microcracks in solder interconnects plays a key role in determining the performance and reliability of solder interconnects, in particular, may increase significantly the potential for brittle interfacial fracture of interconnects and reduce the thermal conductivity of the systems. Thus, characterization of the formation and propagation of microcracks is very important for evaluating the performance and reliability of solder interconnects. In this paper, a phase field crystal model is utilized to study the morphological evolution and propagation of microcracks in a typical solder joint consisting of the Sn-based solder and Cu substrate. The simulation results show that the initial crack notch configuration affects sigificantly the crack propagation. The length and area fraction of the crack gradually increase with the simulation time, while the crack propagation rate decreases initially and then becomes stabilized with the simulation time. The atomic density in the initial crack notch can also affect the crack propagation. The number and size of the crack branches increase with increasing both the atomic density in the initial crack notch and simulation time. When the atomic density in the initial crack notch is 0.9, new cracks form around the pre-existing cracks, and the propagation velocities of cracks along the x and y directions are the same. When the atomic density in the initial crack notch is 0.6, the cracks propagate faster along the y direction than the x direction.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"2 1","pages":"963-967"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88695944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583079
Hui Xiao, D. Luo, Hongqin Wang
In the transition to lead-free process, one of the most prominent problems as the changes of packaging materials and process has brought about is the lead-free solder joint reliability. As material property degradation due to microstructure evolution under loading conditions is the main cause of solder joint failure, studying on damage behavior and failure mechanism of solder joints has a very important theoretical and practical significance for evaluating and predicting the reliability of electronic assemblies. In this paper, failure modes, damage behaviors and failure mechanisms of solder joints under thermos-mechanical loading are reviewed, then the damage-mechanism based prediction methodologies for solder joint reliability in electronic packaging is discussed emphatically. Finally the prospective research on directions of lead-free solder joint reliability in the future is forecasted.
{"title":"Research on damage-mechanism based prediction methodologies for thermo-mechanical reliability of solder joints in electronic packaging","authors":"Hui Xiao, D. Luo, Hongqin Wang","doi":"10.1109/ICEPT.2016.7583079","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583079","url":null,"abstract":"In the transition to lead-free process, one of the most prominent problems as the changes of packaging materials and process has brought about is the lead-free solder joint reliability. As material property degradation due to microstructure evolution under loading conditions is the main cause of solder joint failure, studying on damage behavior and failure mechanism of solder joints has a very important theoretical and practical significance for evaluating and predicting the reliability of electronic assemblies. In this paper, failure modes, damage behaviors and failure mechanisms of solder joints under thermos-mechanical loading are reviewed, then the damage-mechanism based prediction methodologies for solder joint reliability in electronic packaging is discussed emphatically. Finally the prospective research on directions of lead-free solder joint reliability in the future is forecasted.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"7-13"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89335975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583339
W. Yue, Min-bo Zhou, Xin-Ping Zhang
With the advantages of non-contact, flexible, high energy density and local heating, the laser jet solder ball bonding (SBB) technique is widely used in electronic packaging. The reliability of laser jet SBB solder joints has long been concerned. As is well known, the wettability (i.e., the spreading ability) of the molten solder on the boding pad is a key factor influencing the formation and performance of solder joints. Previous studies have revealed that the oxidation of the solder balls can lead to the poor wetting during the laser jet SBB process. Meanwhile, the surface contamination of the bonding pads is inevitable in mass production, which may be another essential factor causing the soldering quality problem for the flux-free laser jet SBB process and the mechanism is still unclear so far. In this study, the factors leading to the poor wetting of 90 μm diameter Sn-3.0Ag-0.5Cu solder balls on Au bonding pads have been ascertained, in particular the surface contamination of Au bonding pads is investigated by using a surface analytical technique called Time-of-flight Secondary Ion Mass Spectrometry (TOF-SIMS). When the possibility of the oxidation layer of solder balls is excluded, the poor wetting of Au/Sn-3.0Ag-0.5Cu/Au solder joints is caused dominantly by the surface contamination of Au bonding pads. So, the surface elements of the poorly wetted bonding pads and the normal ones were comparatively investigated by employing TOF-SIMS with the intensity of the contamination. The results manifest obviously that the surface contamination of Au bonding pads is closely correlated with the poor wettability. The intensity of Au peak on the normal pad is higher, while being lower on the poorly wetted pads. In addition, the characteristic peaks of few organics are also found, indicating that the Au bonding pads are contaminated and evenly covered by some organic and inorganic contaminants, which directly lead to the poor wettability of solder joints during flux-free laser jet SBB process. Further, the mechanism of the poorly wetted solder joints induced by the contamination is analyzed and the near quantitative results are also discussed.
{"title":"Effect of the Au bonding pad contamination on the wettability of Au/Sn-3.0Ag-0.5Cu/Au solder joints in flux-free laser jet solder ball bonding process","authors":"W. Yue, Min-bo Zhou, Xin-Ping Zhang","doi":"10.1109/ICEPT.2016.7583339","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583339","url":null,"abstract":"With the advantages of non-contact, flexible, high energy density and local heating, the laser jet solder ball bonding (SBB) technique is widely used in electronic packaging. The reliability of laser jet SBB solder joints has long been concerned. As is well known, the wettability (i.e., the spreading ability) of the molten solder on the boding pad is a key factor influencing the formation and performance of solder joints. Previous studies have revealed that the oxidation of the solder balls can lead to the poor wetting during the laser jet SBB process. Meanwhile, the surface contamination of the bonding pads is inevitable in mass production, which may be another essential factor causing the soldering quality problem for the flux-free laser jet SBB process and the mechanism is still unclear so far. In this study, the factors leading to the poor wetting of 90 μm diameter Sn-3.0Ag-0.5Cu solder balls on Au bonding pads have been ascertained, in particular the surface contamination of Au bonding pads is investigated by using a surface analytical technique called Time-of-flight Secondary Ion Mass Spectrometry (TOF-SIMS). When the possibility of the oxidation layer of solder balls is excluded, the poor wetting of Au/Sn-3.0Ag-0.5Cu/Au solder joints is caused dominantly by the surface contamination of Au bonding pads. So, the surface elements of the poorly wetted bonding pads and the normal ones were comparatively investigated by employing TOF-SIMS with the intensity of the contamination. The results manifest obviously that the surface contamination of Au bonding pads is closely correlated with the poor wettability. The intensity of Au peak on the normal pad is higher, while being lower on the poorly wetted pads. In addition, the characteristic peaks of few organics are also found, indicating that the Au bonding pads are contaminated and evenly covered by some organic and inorganic contaminants, which directly lead to the poor wettability of solder joints during flux-free laser jet SBB process. Further, the mechanism of the poorly wetted solder joints induced by the contamination is analyzed and the near quantitative results are also discussed.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"26 1","pages":"1201-1205"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89380759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583206
Y. Guan, Qinghua Zeng, J. Chen, Wei Meng, Yufeng Jin, Shengli Ma
High density and small size through silicon via is becoming a research and development hotspot of global academia and industry. The density and size of TSV is often constraint with deep reactive ion etching process, TSV filling process and other process as the diameter of TSV decreases to below 20 micrometer or smaller. In this paper, high density and small size TSV array are fabricated (The diameter of TSV is about 20 micrometer, and the density of TSV is 90000 pins per square centimeter) and their corresponding filling quality are optimized through controlling the profile of TSV in deep reactive ion etching process and taking additives into consideration in TSV filling process. All test results verify the good fabrication and filling quality of this high density and small size through silicon via array for three-dimensional packaging.
{"title":"Fabrication and filling quality optimization of the high density and small size through silicon via array for three-dimensional packaging","authors":"Y. Guan, Qinghua Zeng, J. Chen, Wei Meng, Yufeng Jin, Shengli Ma","doi":"10.1109/ICEPT.2016.7583206","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583206","url":null,"abstract":"High density and small size through silicon via is becoming a research and development hotspot of global academia and industry. The density and size of TSV is often constraint with deep reactive ion etching process, TSV filling process and other process as the diameter of TSV decreases to below 20 micrometer or smaller. In this paper, high density and small size TSV array are fabricated (The diameter of TSV is about 20 micrometer, and the density of TSV is 90000 pins per square centimeter) and their corresponding filling quality are optimized through controlling the profile of TSV in deep reactive ion etching process and taking additives into consideration in TSV filling process. All test results verify the good fabrication and filling quality of this high density and small size through silicon via array for three-dimensional packaging.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"98 1","pages":"603-607"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90572652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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